WO2005114282A3 - Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices - Google Patents

Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices Download PDF

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Publication number
WO2005114282A3
WO2005114282A3 PCT/US2005/017029 US2005017029W WO2005114282A3 WO 2005114282 A3 WO2005114282 A3 WO 2005114282A3 US 2005017029 W US2005017029 W US 2005017029W WO 2005114282 A3 WO2005114282 A3 WO 2005114282A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical
devices
nanoribbons
nanowires
components
Prior art date
Application number
PCT/US2005/017029
Other languages
French (fr)
Other versions
WO2005114282A2 (en
Inventor
Peidong Yang
Mat Law
Donald J Sirbuly
Justin C Johnson
Richard Saykally
Original Assignee
Univ California
Peidong Yang
Mat Law
Donald J Sirbuly
Justin C Johnson
Richard Saykally
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Peidong Yang, Mat Law, Donald J Sirbuly, Justin C Johnson, Richard Saykally filed Critical Univ California
Priority to EP05761557A priority Critical patent/EP1747488A2/en
Priority to CA002565765A priority patent/CA2565765A1/en
Priority to JP2007513453A priority patent/JP2007538274A/en
Publication of WO2005114282A2 publication Critical patent/WO2005114282A2/en
Publication of WO2005114282A3 publication Critical patent/WO2005114282A3/en
Priority to US11/559,244 priority patent/US8280214B2/en
Priority to US12/402,257 priority patent/US20090263912A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength

Abstract

Nanoribbons 40 and nanowires 38 having diameters less than the wavelength of light, as shown for example in Fig. 7B, are used in the formation of optical circuits and devices. Such nano structures function as subwavelength optical waveguides which form a fundamental building block for optical integration. The extraordinary length, flexibility and strength of these structures enable their manipulation on surfaces, including the precise positioning and optical linking of nanoribbon/wire waveguides 40, 38 and other nanoribbon/wire elements to form optical networks and devices. In addition, such structures provide for waveguiding in liquids, enabling them to further be used in other applications such as optical probes and sensors.
PCT/US2005/017029 2004-05-13 2005-05-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices WO2005114282A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP05761557A EP1747488A2 (en) 2004-05-13 2005-05-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
CA002565765A CA2565765A1 (en) 2004-05-13 2005-05-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
JP2007513453A JP2007538274A (en) 2004-05-13 2005-05-13 Nanowires and nanoribbons as subwavelength optical waveguides, and use of these nanostructures in optical circuits and optical element components
US11/559,244 US8280214B2 (en) 2004-05-13 2006-11-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
US12/402,257 US20090263912A1 (en) 2004-05-13 2009-03-11 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US57141604P 2004-05-13 2004-05-13
US60/571,416 2004-05-13
US64361205P 2005-01-12 2005-01-12
US60/643,612 2005-01-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/559,244 Continuation US8280214B2 (en) 2004-05-13 2006-11-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
US11/559,244 Continuation-In-Part US8280214B2 (en) 2004-05-13 2006-11-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices

Publications (2)

Publication Number Publication Date
WO2005114282A2 WO2005114282A2 (en) 2005-12-01
WO2005114282A3 true WO2005114282A3 (en) 2006-06-08

Family

ID=35429014

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/017029 WO2005114282A2 (en) 2004-05-13 2005-05-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices

Country Status (4)

Country Link
EP (1) EP1747488A2 (en)
JP (1) JP2007538274A (en)
CA (1) CA2565765A1 (en)
WO (1) WO2005114282A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390951B2 (en) 2009-05-26 2016-07-12 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100995457B1 (en) 2000-08-22 2010-11-18 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 Nanosensors
KR20030055346A (en) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 Nanosensors
US8280214B2 (en) * 2004-05-13 2012-10-02 The Regents Of The University Of California Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
WO2006015105A2 (en) * 2004-07-28 2006-02-09 President And Fellows Of Harvard College Nanowire photonic circuits, components thereof, and related methods
US8154002B2 (en) 2004-12-06 2012-04-10 President And Fellows Of Harvard College Nanoscale wire-based data storage
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
CA2625647A1 (en) * 2005-10-12 2007-04-19 Adelaide Research And Innovation Pty Ltd Fabrication of nanowires
JP2009540333A (en) 2006-06-12 2009-11-19 プレジデント アンド フェロウズ オブ ハーバード カレッジ Nanosensors and related technologies
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
EP2095100B1 (en) 2006-11-22 2016-09-21 President and Fellows of Harvard College Method of operating a nanowire field effect transistor sensor
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
CN102073102B (en) * 2010-12-08 2012-08-08 中国科学院半导体研究所 Slot waveguide micro-ring resonance type single-fiber three-dimensional machine
CN102412503A (en) * 2011-09-20 2012-04-11 浙江大学 Single-longitudinal-mode laser for coupling by utilizing two semiconductor nano wires and preparation method
CN103227419A (en) * 2013-04-01 2013-07-31 天津理工大学 ZnO nanotube/SiO2 quantum dot-based pumping random laser transmitter
JP6947386B2 (en) * 2017-06-29 2021-10-13 学校法人 名城大学 Semiconductor light emitting element and manufacturing method of semiconductor light emitting element
CN114142341B (en) * 2021-11-30 2023-08-25 中北大学 On-chip supercontinuum light source based on free nanowire-silicon waveguide structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390951B2 (en) 2009-05-26 2016-07-12 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices

Also Published As

Publication number Publication date
EP1747488A2 (en) 2007-01-31
CA2565765A1 (en) 2005-12-01
JP2007538274A (en) 2007-12-27
WO2005114282A2 (en) 2005-12-01

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