WO2005106951A1 - Assembly of a controllable electrical component on a substrate and method for producing the assembly - Google Patents

Assembly of a controllable electrical component on a substrate and method for producing the assembly Download PDF

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Publication number
WO2005106951A1
WO2005106951A1 PCT/EP2005/051225 EP2005051225W WO2005106951A1 WO 2005106951 A1 WO2005106951 A1 WO 2005106951A1 EP 2005051225 W EP2005051225 W EP 2005051225W WO 2005106951 A1 WO2005106951 A1 WO 2005106951A1
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WIPO (PCT)
Prior art keywords
component
substrate
contact surface
thermal contact
thermal
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PCT/EP2005/051225
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German (de)
French (fr)
Inventor
Eckhard Wolfgang
Original Assignee
Siemens Aktiengesellschaft
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Publication of WO2005106951A1 publication Critical patent/WO2005106951A1/en

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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Definitions

  • the invention relates to an arrangement of at least one controllable electrical component on a substrate and a method for producing the arrangement.
  • the controllable electrical component is a power semiconductor component which is arranged on a substrate (circuit carrier).
  • the substrate is, for example, a DGB (Direct Copper Bonding) substrate, which consists of a carrier layer made of a ceramic material, on which electrically conductive layers of copper (copper foils) are applied on both sides.
  • the ceramic material is, for example, aluminum oxide (Al 2 O 3 ).
  • the power semiconductor component is soldered onto one of the electrically conductive layers made of copper.
  • a certain amount of heat is generated during operation of the power semiconductor component. This amount of heat is dissipated away from the power semiconductor component by heat conduction.
  • the heat conduction takes place via the solder connection between the power semiconductor component and the electrically conductive copper layer to the carrier layer of the substrate made of aluminum oxide. Since aluminum oxide also has a certain thermal conductivity (the specific one
  • Thermal conductivity coefficient ⁇ of aluminum oxide is about 30 Wm 1 -K 1 ), the carrier layer of the substrate acts as an efficient heat sink for the.
  • a method for producing the arrangement is to be specified.
  • an arrangement of at least one controllable electrical component on a substrate is specified, the substrate having at least one thermal contact surface with a thermally conductive material, the component at least one thermal
  • the component Has contact surface on which a certain amount of heat occurs during operation of the component, the component is arranged on the substrate such that the thermal contact surface of the component is turned away from the substrate, at least one thermal connecting line for transferring the specific amount of heat from the thermal contact surface of the component is present on the thermal contact surface of the substrate and the thermal connecting line has a metallization layer deposited on the arrangement.
  • a method for producing the arrangement is also specified with the following method steps: a) arranging the component on the substrate such that the thermal contact surface of the component is turned away from the substrate, b) producing an electrical insulation layer on the component such that the thermal contact surface of the component and the thermal contact surface of the substrate are freely accessible, and depositing at least one metallization layer on the thermal contact surface of the component, the thermal contact surface of the substrate and the insulation layer for Establishing the thermal connection line between the thermal contact surfaces.
  • the substrate on which the component is arranged can be any circuit carrier based on organic and in particular inorganic.
  • Such circuit carriers or substrates are, for example, PCB (printed circuit board), DGB, IM (insulated metal), HTCC (high temperature cofired ceramics) and LTCC (low temperature cofired ceramics) substrates.
  • the metallization layer functioning as a thermal connecting line is connected directly to the thermal contact surface of the substrate.
  • the substrate which acts as a heat sink for the amount of heat occurring during operation of the controllable electrical component, is designed in such a way that there is heat conduction through the substrate.
  • the heat conduction takes place through a volume of the substrate.
  • the substrate not only has a thermally conductive material on the thermal contact surface, but also in the volume of the substrate.
  • the substrate consists entirely of the thermally conductive material. It is also conceivable that only one layer of the substrate consists of the thermally conductive material.
  • Such a layer is, for example, the carrier layer of a DCB substrate made of aluminum oxide. The entire carrier layer is used to dissipate the amount of heat.
  • a thermal via is present in the volume of the substrate.
  • the substrate is an LTCC substrate, in the volume of which the thermal via is embedded.
  • the thermal via is formed, for example, by a thermally highly conductive metal. Such a metal is, for example, silver.
  • the thermal via leads from one surface section of the substrate to another surface section of the substrate. The upper surface section and the further surface section have turned away from each other.
  • the surface sections are arranged, for example, on different main surfaces of the substrate.
  • One of the surface sections of the substrate forms the thermal contact surface of the substrate, which is thermally conductively connected to the thermal connecting line of the arrangement. The amount of heat that occurs at the thermal contact surface of the component can thus be dissipated through the substrate via the thermal connecting line and the thermal via.
  • the specific thermal conductivity coefficient ⁇ of the thermally conductive material of the thermal contact surface of the substrate at a temperature of about 20 ° C. is at least 1 w- ⁇ rf 1 - ⁇ X
  • the thermally conductive material is advantageously also characterized by a low electrical conductivity.
  • a thermally conductive and electrically insulating ceramic material is particularly suitable.
  • the thermally conductive material therefore has at least one ceramic material selected from the group consisting of aluminum nitride (A1N) and / or aluminum oxide.
  • the specific thermal conductivity coefficient ⁇ of aluminum nitride is about 180 w-nX-K -1 at 20 ° C.
  • Other ceramic materials for example silicon carbide (SiC) or silicon nitride (SiüNa) are also conceivable.
  • the thermally conductive material can form the thermal contact surface of the substrate or the entire substrate.
  • the substrate consists of a composite material with a matrix of a polymer, in which particles of the thermally conductive material are embedded.
  • a thermally conductive composite material there is a thermally conductive composite material.
  • the metallization layer forms the thermal connection line.
  • the metallization layer has a metal with a relatively high thermal conductivity.
  • the metallization layer adheres very well to the thermal contact surface of the component and the thermal contact surface of the substrate.
  • the metallization layer therefore has at least one metal selected from the group consisting of aluminum, gold, copper, molybdenum, silver, titanium, vanadium, tungsten and / or zirconium.
  • the metallization layer can consist of a single layer. There is a single-layer metallization layer.
  • the metallization layer has a multilayer structure with at least two partial metallization layers arranged one above the other. Each of the partial metallization layers is associated with different functions.
  • a first partial metallization layer leads, for example, to very good mechanical adhesion of the metallization layer to the thermal contact surface of the component and to the thermal contact surface of the substrate.
  • This partial metallization layer functions as an adhesion promoting layer.
  • an adhesion-promoting layer made of titanium has proven itself.
  • suitable materials for the adhesion-promoting layer are, for example, chromium, vanadium or zirconium.
  • a second partial metallization layer arranged above the adhesion-promoting layer functions, for example, as a diffusion barrier.
  • a partial metallization layer consists, for example, of a titanium-tungsten alloy.
  • Metallization layer or partial metallization layers carried out a vapor deposition process.
  • Vapor deposition is, for example, a physical vapor deposition (PVD) process.
  • the PVD process is, for example, sputtering.
  • a chemical vapor deposition (CVD) process is also conceivable.
  • the galvanic deposition can have a layer thickness of up to several hundred ⁇ m. Such a large layer thickness leads to an increased thermal
  • the galvanic deposition consists, for example, of copper.
  • the galvanic deposition of copper is advantageously carried out on a thin copper layer a few micrometers thick. This thin copper layer, which is referred to as the seed layer, is produced, for example, by a vapor deposition process.
  • the metallization layer is electrically insulated from surface sections of the component to be insulated.
  • the metallization layer is therefore deposited on an electrical insulation layer for the electrical insulation of a surface section of the component.
  • the insulation layer preferably has an insulation layer thickness selected from the range from 50 ⁇ m to 500 ⁇ m inclusive and in particular from the range from 100 ⁇ m to 300 ⁇ m inclusive.
  • the insulation layer can be single-layered. It is also conceivable that the insulation layer is multi-layered.
  • the insulation layer has a multilayer structure at least two partial insulation layers arranged one above the other.
  • an electrically insulating lacquer is applied in a corresponding thickness.
  • the varnish is applied to the component and the substrate in a printing process. It can be ensured that the lacquer is not applied to the thermal contact surfaces of the component and / or the substrate.
  • the thermal contact areas remain free. However, the thermal contact areas can also only be exposed after application.
  • corresponding openings are produced in the insulation layer after curing and / or after the lacquer has dried.
  • the opening or openings are produced in particular by a photolithography process and / or by laser ablation.
  • a photosensitive varnish is used for the photolithography process.
  • the following further method steps are carried out to produce the insulation layer on the component: d) laminating at least one electrical insulation film on the component and the substrate and e) creating an opening in the insulation film so that the thermal contact surface of the component is freely accessible ,
  • the same process step can also be carried out for exposing the thermal contact point of the substrate.
  • the insulation film can also be laminated on in such a way that the thermal contact surface of the substrate remains free. In this case, it is not necessary to create an opening to expose the thermal contact surface of the substrate.
  • Component is laminated by at least one on the component and optionally on the substrate Insulation film formed.
  • at least part of the insulation film is laminated onto the surface section of the component to be electrically insulated such that a surface contour of the component is depicted in a surface contour of the part of the insulation film that corresponds to the
  • Component is facing away.
  • the surface contour does not concern a roughness or waviness of the
  • the surface contour results, for example, from an edge of the component.
  • the surface contour shown is in particular not specified by the shape of the component alone, but also by the shape of the substrate on which the component is arranged.
  • the insulation film is laminated on under vacuum. Laminating under vacuum creates a particularly firm and intimate contact between the insulation film and the component or the insulation film and the substrate.
  • An insulation film used for this purpose has an electrical insulation material. Any thermosetting (thermosetting) and / or thermoplastic plastic is conceivable as insulation material.
  • the insulation film has at least one electrical insulation material selected from the group consisting of liquid-crystalline polymer, organically modified ceramic, polyacrylate, polyimide, polyisocyanate, polyethylene, polyphenol, polyether ether kitone, polytetrafluoroethylene and / or epoxy. Mixtures of the plastics mentioned and / or Copolymers of monomers of plastics are also conceivable.
  • the insulation foils are laminated in such a way that the openings come to rest on the thermal contact surfaces of the component and the substrate.
  • the openings in the insulation film are advantageously only created after the lamination.
  • the openings in the insulation foils are created by removing material. This can be done photolithographically.
  • the openings in the insulation films are produced by laser ablation. Material is removed using a laser. For example, a CO2 aser with a wavelength of 9.24 ⁇ m is used for laser ablation. The use of a UV laser is also conceivable.
  • the thermal connection line also takes over the function of the electrical connection line via which the component is electrically contacted.
  • the arrangement can have any controllable electrical component.
  • the controllable electrical component is, for example, a semiconductor component.
  • the semiconductor component is preferably a power semiconductor component selected from the group consisting of a diode, MOSFET, IGBT, tyristor and / or bipolar transistor.
  • the power semiconductor components mentioned are suitable for high
  • the power semiconductor components each have switches via at least one input, one output and one control contact. These contacts are electrically contacted via corresponding electrical contact surfaces.
  • the thermal contact surface of the component and the electrical contact surfaces of the component can be different from one another. In particular, the thermal contact area and the electrical contact area of the component are identical.
  • FIG. 1 shows an arrangement of an electrical component on a substrate.
  • FIG. 2 shows a section of the arrangement of the component on the subs council according to FIG. 1.
  • FIG. 3 shows a method for producing the arrangement.
  • the arrangement 1 has at least one controllable electrical component 2 on a substrate 5 (FIG. 1).
  • the substrate 5 is a DGB substrate with a carrier layer 50 and an electrically conductive layer 51 made of copper applied to the carrier layer 50.
  • the electrically conductive layer 51 is formed by an approximately 300 ⁇ m thick copper foil.
  • the carrier layer 50 consists of a thermally conductive and electrically insulating material. This material is a ceramic material. In a first embodiment, the ceramic material is aluminum oxide. In further alternative configurations, the ceramic material is aluminum nitride, silicon carbide or silicon nitride.
  • the electrical component 2 is a power semiconductor component in the form of a MOSFET with a Height of about 350 ⁇ m.
  • the power semiconductor component 2 is soldered to the electrically conductive layer 51.
  • the solder connection has a layer thickness of approximately 100 ⁇ m.
  • the electrically conductive layer 51 made of copper is used for electrical contacting of one of the contacts of the power semiconductor component 2 (source, gate or drain).
  • the power semiconductor component 2 is soldered onto the electrically conductive layer 51 such that a thermal contact surface 20 of the power semiconductor component 2 faces away from the substrate 5.
  • the thermal contact surface 20 is from an electrical contact surface 21 of the
  • Power semiconductor device 2 formed.
  • One of the contacts of the power semiconductor component 2 is also electrically contacted via the electrical contact surface 21.
  • the thermal connecting line 3 functions as an electrical connecting line 6 for electrically contacting the electrical contact surface 21 of the power semiconductor component 2.
  • the electrical connecting line 6 is connected to a further electrically conductive layer 53 of the substrate 5.
  • the further electrically conductive layer 53 is likewise formed from a copper foil applied to the carrier layer 50.
  • a thermal connecting line 3 is provided to dissipate the amount of heat generated.
  • the thermal connecting line 3 is connected to the thermal contact surface 20 of the power semiconductor component 2 and a thermal one
  • the thermal contact surface 52 of the substrate 5 is thermally conductively connected.
  • the thermal contact surface 52 of the substrate is from the Carrier layer 50 of substrate 5 is formed from the ceramic material.
  • the thermal connection line 3 forms a heat conduction path 33, via which the amount of heat is conducted away by heat conduction from the power semiconductor component 2 to the carrier layer 50 of the substrate 5.
  • the thermal connection line 3 has a metallization layer 30.
  • the amount of heat generated during operation of the power semiconductor component 2 is dissipated via the metallization layer 30.
  • the metallization layer 30 of the connecting line is applied directly to the thermal contact surface 52 of the substrate 5 or the carrier layer 50 of the substrate 5.
  • the metallization layer 30 of the connecting line 3 is distinguished by a multilayer structure (FIG. 2).
  • the metallization layer 30 consists of individual partial metallization layers 32 arranged one above the other.
  • Power semiconductor component 2 or the thermal contact surface 52 of the carrier layer 50 of the substrate 5 is connected, consists of titanium and functions as an adhesion-promoting layer.
  • the partial metallization layer 322 arranged above is made of a titanium-tungsten alloy. This partial metallization layer 322 acts as a diffusion barrier.
  • a thin partial metallization layer 323 made of copper is applied over the partial metallization layer 322 functioning as a diffusion barrier.
  • a partial metallization layer 324 in the form of electrodeposited copper is present over the thin copper layer 323.
  • the thin copper layer 323 acts as a seed layer for the galvanic deposition of the copper. While the partial metallization layers 321, 322 and 323 are each only a few ⁇ m thick (these partial metallization layers are produced by a PVD method) the partial metallization layer 324 is applied with a relatively large layer thickness. The result is one
  • Total layer thickness 31 of the metallization layer 30 of approximately 200 ⁇ m.
  • the metallization layer 30 is almost completely formed by the thick partial metallization layer 324.
  • Power semiconductor component 2 is efficiently forwarded to the substrate 5. Since the ceramic material of the carrier layer 52 of the substrate 5 also has a relatively high thermal conductivity, the amount of heat can be efficiently transported away from the power semiconductor component 2.
  • the power semiconductor component 2 is soldered onto a DCB substrate 5.
  • An insulation film 4 is then laminated on (FIG. 3,
  • Insulation film 4 is applied in such a way that a surface contour 25 which results from the
  • Power semiconductor component 2 the electrically conductive layer 51 and the carrier layer 50 of the DCB substrate results, is imaged in a surface contour 47 of part of the insulation film 4.
  • a surface of the insulation film 4 facing away from the substrate 5 and the power semiconductor component 2 essentially shows the same surface contour as the power semiconductor component 2 and the substrate.
  • the insulation film 4 follows the topography of the power semiconductor component 2 and the substrate 5.
  • the insulation film 4 has a film thickness of approximately 100 ⁇ m on.
  • the result is an insulation layer thickness 41 of approximately 100 ⁇ m.
  • a height difference of approximately 850 ⁇ m is overcome, which is given by the layer thickness of the electrically conductive layer 51, the layer thickness of the solder connection and the height 22 of the power semiconductor component 2.
  • an opening 42 for contacting the thermal contact surface 20 of the power semiconductor component 2 and an opening 43 for contacting the thermal contact surface 52 of the substrate 5 are produced in the insulation film 4 (FIG. 3, reference number 302).
  • One window each is opened in the insulation film 4.
  • the windows are opened by removing material using laser ablation. For this purpose, a CO 2 laser with a wavelength of 9.24 ⁇ m is used.
  • a cleaning step is carried out in order to remove residues of the insulation material of the insulation film 4.
  • Metallization layer 30 applied to the thermal contact surface 21 of the power semiconductor component 2, the thermal contact surface 52 of the substrate 5 and the insulation film 4 (FIG. 3, reference number 303).
  • the metallization layer 30 is applied in such a way that in each case first the partial metallization layer 321 made of titanium, then the partial metallization layer 322 made of the titanium-tungsten alloy and then a thin copper layer 323 are deposited in a vapor deposition process. Copper is then electrodeposited.
  • the partial metallization layer 324 is formed in the form of a copper deposition.
  • the heat dissipation path 33 via the metallization layer 30 of the thermal connecting line 3 there is a further heat dissipation path 34 in the arrangement 1 described, which extends from the power semiconductor component 2 via the Solder connection and leads via the electrically conductive layer 51 to the carrier layer 51 of the substrate 5.
  • the carrier layer 52 functions as a heat sink for the amount of heat.
  • the substrate 5 is connected to a further heat sink, not shown, in a further embodiment.
  • the further heat sink is a heat sink or a cooling fluid.

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Abstract

The invention relates to an assembly (1) of at least one controllable electrical component (2) on a substrate. The substrate has at least one thermal contact surface (52) with a thermally conductive material. The component has at least one thermal contact surface (21) on which a specified quantity of heat arises when the component is in operation. The component is placed on the substrate so that the thermal contact surface of the component faces away from the substrate. At least one thermal connecting line (3) is provided for transferring the specified quantity of heat from the thermal contact surface of the component to the thermal contact surface of the substrate, and the thermal connecting line has a metallization layer (30) deposited upon the assembly. For producing the assembly, the following method steps are carried out: a) placing the component upon the substrate so that the thermal contact surface of the component faces away from the substrate; b) producing an electrical insulating layer (4) on the component in such a manner that the thermal contact surface of the component and the thermal contact surface of the substrate remain freely accessible, and; depositing at least one metallization layer onto the thermal contact surface of the component, the thermal contact surface of the substrate, and onto the insulating layer in order to produce the thermal connecting line between the thermal contact surfaces. The component is a power semiconductor component. The metallization layer comprises electrodeposited copper. The resulting thermal connecting line has an efficient heat removal path (33).

Description

Beschreibungdescription
Anordnung eines steuerbaren elektrischen Bauelements auf einem Substrat und Verfahren zum Herstellen der AnordnungArrangement of a controllable electrical component on a substrate and method for producing the arrangement
Die Erfindung betrifft eine Anordnung mindestens eines steuerbaren elektrischen Bauelements auf einem Substrat und ein Verfahren zum Herstellen der Anordnung.The invention relates to an arrangement of at least one controllable electrical component on a substrate and a method for producing the arrangement.
Eine derartige Anordnung und ein Verfahren zum Herstellen der Anordnung sind beispielsweise aus der WO 03/030247 A2 bekannt. Das steuerbare elektrische Bauelement ist ein Leistungshalbleiterbauelement, das auf einem Substrat (Schaltungsträger) angeordnet ist. Das Substrat ist beispielsweise ein DGB (Direct Copper Bonding) -Substrat, das aus einer Trägerschicht aus einem keramischen Werkstoff besteht, an der beidseitig elektrisch leitende Schichten aus Kupfer (Kupferfolien) aufgebracht sind. Der keramische Werkstoff ist beispielsweise Aluminiumoxid (AI2O3) . Das Leistungshalbleiterbauelement ist auf einer der elektrisch leitenden Schichten aus Kupfer aufgelötet .Such an arrangement and a method for producing the arrangement are known, for example, from WO 03/030247 A2. The controllable electrical component is a power semiconductor component which is arranged on a substrate (circuit carrier). The substrate is, for example, a DGB (Direct Copper Bonding) substrate, which consists of a carrier layer made of a ceramic material, on which electrically conductive layers of copper (copper foils) are applied on both sides. The ceramic material is, for example, aluminum oxide (Al 2 O 3 ). The power semiconductor component is soldered onto one of the electrically conductive layers made of copper.
Im Betrieb des Leistungshalbleiterbauelements entsteht eine bestimmte Wärmemenge. Diese Wärmemenge wird durch Wärmeleitung vom Leistungshalbleiterbauelement weg abgeleitet . Die Wärmeleitung erfolgt über die Lotverbindung zwischen dem Leistungshalbleiterbauelement und der elektrisch leitenden Kupferschicht hin zur Trägerschicht des Substrats aus Aluminiumoxid. Da Aluminiumoxid ebenfalls über eine bestimmte Wärmeleitfähigkeit verfügt (der spezifischeA certain amount of heat is generated during operation of the power semiconductor component. This amount of heat is dissipated away from the power semiconductor component by heat conduction. The heat conduction takes place via the solder connection between the power semiconductor component and the electrically conductive copper layer to the carrier layer of the substrate made of aluminum oxide. Since aluminum oxide also has a certain thermal conductivity (the specific one
Wärmeleitfähigkeitskoeffizient λ von Aluminiumoxid beträgt etwa 30 W-m 1-K 1) , fungiert die Trägerschicht des Substrats als effiziente Wärmesenke für die .Thermal conductivity coefficient λ of aluminum oxide is about 30 Wm 1 -K 1 ), the carrier layer of the substrate acts as an efficient heat sink for the.
Im Betrieb des Leistungshalbleiterbauelements kann es zu einer derart starken Wärmeentwicklung kommen, dass das Leistungshalbleiterbauelement oder die Anordnung des Leistungshalbleiterbauelements auf dem Substrat geschädigt wird.During the operation of the power semiconductor component, such a strong heat development can occur that the power semiconductor component or the arrangement of the Power semiconductor device is damaged on the substrate.
Aufgabe der vorliegenden Erfindung ist es daher, eine Anordnung aus einem steuerbaren elektrischen Bauelement anzugeben, das eine im Vergleich zum bekannten Stand der Technik verbesserte Ableitung der im Betrieb des Bauelements entstehenden Wärme gewährleistet . Darüber hinaus soll ein Verfahren zum Herstellen der Anordnung angegeben werden.It is therefore an object of the present invention to provide an arrangement comprising a controllable electrical component which ensures an improved dissipation of the heat generated during operation of the component compared to the known prior art. In addition, a method for producing the arrangement is to be specified.
Zur Lösung der Aufgabe wird eine Anordnung mindestens eines steuerbaren elektrischen Bauelements auf einem Substrat angegeben, wobei das Substrat mindestens eine thermische Kontakt läche mit einem thermisch leitfähigen Material aufweist, das Bauelement mindestens eine thermischeTo achieve the object, an arrangement of at least one controllable electrical component on a substrate is specified, the substrate having at least one thermal contact surface with a thermally conductive material, the component at least one thermal
Kontaktfläche aufweist, an der im Betrieb des Bauelements eine bestimmte Wärmemenge auftritt, das Bauelement derart auf dem Substrat angeordnet ist, dass die thermische Kontakt läche des Bauelements dem Substrat abgekehrt ist, mindestens eine thermische Verbindungsleitung zum übertragen der bestimmten Wärmemenge von der thermischen Kontaktfläche des Bauelements auf die thermische Kontaktfläche des Substrats vorhanden ist und die thermische Verbindungsleitung eine auf der Anordnung abgeschiedene Metallisierungsschicht aufweist .Has contact surface on which a certain amount of heat occurs during operation of the component, the component is arranged on the substrate such that the thermal contact surface of the component is turned away from the substrate, at least one thermal connecting line for transferring the specific amount of heat from the thermal contact surface of the component is present on the thermal contact surface of the substrate and the thermal connecting line has a metallization layer deposited on the arrangement.
Zur Lösung der Aufgabe wird auch ein Verfahren zum Herstellen der Anordnung mit folgenden Verfahrensschritten angegeben: a) Anordnen des Bauelements auf dem Substrat derart, dass die thermische Kontaktfläche des Bauelements dem Substrat abgekehrt ist, b) Erzeugen einer elektrischen Isolationsschicht auf dem Bauelement derart, dass die thermische Kontaktfläche des Bauelements und die thermische Kontaktfläche des Substrats frei zugänglich sind, und Abscheiden mindestens einer Metallisierungsschicht auf der thermischen Kontakt läche des Bauelements, der thermischen Kontaktfläche des Substrats und der Isolationsschicht zum Herstellen der thermischen Verbindungsleitung zwischen den thermischen Kontaktflächen.To achieve the object, a method for producing the arrangement is also specified with the following method steps: a) arranging the component on the substrate such that the thermal contact surface of the component is turned away from the substrate, b) producing an electrical insulation layer on the component such that the thermal contact surface of the component and the thermal contact surface of the substrate are freely accessible, and depositing at least one metallization layer on the thermal contact surface of the component, the thermal contact surface of the substrate and the insulation layer for Establishing the thermal connection line between the thermal contact surfaces.
Das Substrat, auf dem das Bauelement angeordnet ist, kann ein beliebiger Schaltungsträger auf organischer und insbesondere anorganischer Basis sein. Solche Schaltungsträger bzw. Substrate sind beispielsweise PCB (Printed Circuit Board)—, DGB-, IM (insulated Metal) -, HTCC (High Te perature Cofired Ceramics)— und LTCC (Low Temperature Cofired Cerarαics)- Substrate.The substrate on which the component is arranged can be any circuit carrier based on organic and in particular inorganic. Such circuit carriers or substrates are, for example, PCB (printed circuit board), DGB, IM (insulated metal), HTCC (high temperature cofired ceramics) and LTCC (low temperature cofired ceramics) substrates.
Die als thermische Verbindungsleitung fungierende MetallisierungsSchicht ist unmittelbar mit der thermischen Kontaktfläche des Substrats verbunden. Das Substrat, das als Wärmesenke für die im Betrieb des steuerbaren elektrischen Bauelements auftretenden Wärmemenge fungiert, ist dabei derart ausgestaltet, dass es zu einer Wärmeleitung durch das Substrat kommt. Die Wärmeleitung erfolgt durch ein Volumen des Substrats. Dazu weist das Substrat nicht nur an der thermischen Kontaktfläche ein thermisch leitfähiges Material auf, sondern auch im Volumen des Substrats. Beispielsweise besteht das Substrat vollständig aus dem thermisch leitfähigen Material. Denkbar ist auch, dass nur eine Schicht des Substrats aus dem thermisch leitfähigen Material besteht. Eine derartige Schicht ist beispielsweise die Trägerschicht eines DCB—Substrats aus Aluminiumoxid. Die gesamte Trägerschicht dient der Ableitung der Wärmemenge. Denkbar ist auch, dass im Volumen des Substrats eine thermische Durchkontaktierung (Via) vorhanden ist. Beispielsweise ist das Substrat ein LTCC-Substrat, in dessen Volumen die thermische Durchkontaktierung eingebettet ist . Die thermische Durchkontaktierung wird beispielsweise von einem thermisch hochleitfäh gen Metall gebildet . Ein derartiges Metall ist beispielsweise Silber. Die thermische Durchkontaktierung führt von einem Oberflächenabschnitt des Substrats zu einem weiteren Oberflächenabschnitt des Substrats. Der Obe flächenabschnitt und der weitere Oberflächenabschnitt sind voneinander abgekehrt. Die Oberflächenabschnitte sind beispielsweise an verschiedenen Hauptflächen des Substrats angeordnet. Einer der Oberflächenabschnitte des Substrats bildet die thermische Kontaktfläche des Substrats, die mit der thermischen Verbindungsleitung der Anordnung thermisch leitend verbunden ist. So kann die Wärmemenge, die an der thermischen Kontaktfläche des Bauelements auftritt, über die thermische Verbindungsleitung und die thermische Durchkontaktierung durch das Substrat hindurch abgeleitet werde .The metallization layer functioning as a thermal connecting line is connected directly to the thermal contact surface of the substrate. The substrate, which acts as a heat sink for the amount of heat occurring during operation of the controllable electrical component, is designed in such a way that there is heat conduction through the substrate. The heat conduction takes place through a volume of the substrate. For this purpose, the substrate not only has a thermally conductive material on the thermal contact surface, but also in the volume of the substrate. For example, the substrate consists entirely of the thermally conductive material. It is also conceivable that only one layer of the substrate consists of the thermally conductive material. Such a layer is, for example, the carrier layer of a DCB substrate made of aluminum oxide. The entire carrier layer is used to dissipate the amount of heat. It is also conceivable that a thermal via (via) is present in the volume of the substrate. For example, the substrate is an LTCC substrate, in the volume of which the thermal via is embedded. The thermal via is formed, for example, by a thermally highly conductive metal. Such a metal is, for example, silver. The thermal via leads from one surface section of the substrate to another surface section of the substrate. The upper surface section and the further surface section have turned away from each other. The surface sections are arranged, for example, on different main surfaces of the substrate. One of the surface sections of the substrate forms the thermal contact surface of the substrate, which is thermally conductively connected to the thermal connecting line of the arrangement. The amount of heat that occurs at the thermal contact surface of the component can thus be dissipated through the substrate via the thermal connecting line and the thermal via.
Zu einer effizienten Wärmeleitung beträgt der spezifische Wärmeleitfähigkeitskoe fizient λ des thermisch leitfähigen Materials der thermischen Kontaktfläche des Substrats bei einer Temperatur von etwa 20° C mindestens 1 w-ιrf1-κXFor efficient heat conduction, the specific thermal conductivity coefficient λ of the thermally conductive material of the thermal contact surface of the substrate at a temperature of about 20 ° C. is at least 1 w-ιrf 1 -κX
Gleichzeitig zeichnet sich das thermisch leitfähige Material vorteilhaft auch durch eine niedrige elektrische Leitfähigkeit aus. Besonders geeignet ist ein thermisch leitender und elektrisch isolierender keramischer Werkstoff. In einer besonderen Ausgestaltung weist daher das thermisch leitfähige Material mindestens einen aus der Gruppe Aluminiumnitrid (A1N) und/oder Aluminiumoxid ausgewählten keramischen Werkstoff auf. Der spezifischen Wärmeleitfähigkeitskoeffizient λ von Aluminiumnitrid beträgt bei 20° C etwa 180 w-nX-K-1. Andere keramische Werkstoffe, beispielsweise Siliziumcarbid (SiC) oder Siliziumnitrid (SiüNa) sind ebenfalls denkbar.At the same time, the thermally conductive material is advantageously also characterized by a low electrical conductivity. A thermally conductive and electrically insulating ceramic material is particularly suitable. In a particular embodiment, the thermally conductive material therefore has at least one ceramic material selected from the group consisting of aluminum nitride (A1N) and / or aluminum oxide. The specific thermal conductivity coefficient λ of aluminum nitride is about 180 w-nX-K -1 at 20 ° C. Other ceramic materials, for example silicon carbide (SiC) or silicon nitride (SiüNa) are also conceivable.
Das thermisch leitfähige Material kann allein oder im Verbund mit weiteren Materialien die thermische Kontaktfläche des Substrats bzw. das gesamte Substrat bilden. Beispielsweise besteht das Substrat aus einem Verbundwerkstoff mit einer Matrix aus einem Polymer, in dem Partikel aus dem thermisch leitfähigen Material eingebettet sind. Es liegt ein thermisch leitfähiger Verbundwerkstoff vor. The thermally conductive material, alone or in combination with other materials, can form the thermal contact surface of the substrate or the entire substrate. For example, the substrate consists of a composite material with a matrix of a polymer, in which particles of the thermally conductive material are embedded. There is a thermally conductive composite material.
Die Metallisierungsschicht bildet die thermische Verbindungsleitung. Dazu weist die Metallisierungsschicht ein Metall mit einer relativ hohen thermische Leitfähigkeit aus. Daneben ist auch dafür gesorgt, dass die Metallisierungsschicht sehr gut auf der thermischen Kontaktfläche des Bauelements und der thermischen Kontaktfläche des Substrats haftet. In einer besonderen Ausgestaltung weist die Metallisierungsschicht daher mindestens ein aus der Gruppe Aluminium, Gold, Kupfer, Molybdän, Silber, Titan, Vanadium, Wolfram und/oder Zirkonium ausgewähltes Metall auf.The metallization layer forms the thermal connection line. For this purpose, the metallization layer has a metal with a relatively high thermal conductivity. In addition, it is also ensured that the metallization layer adheres very well to the thermal contact surface of the component and the thermal contact surface of the substrate. In a special embodiment, the metallization layer therefore has at least one metal selected from the group consisting of aluminum, gold, copper, molybdenum, silver, titanium, vanadium, tungsten and / or zirconium.
Die Metallisierungsschicht kann aus einer einzigen Schicht bestehen. Es liegt eine einschichtige Metallisierungsschicht vor. Insbesondere weist die Metallisierungsschicht einen Mehrschichtaufbau mit mindestens zwei übereinander angeordneten Teil—Metallisierungsschichten auf. Dabei ist jede der Teil-Metallisierungsschichten mit unterschiedlichen Funktionen verbunden. Eine erste Teil-Metallisierungsschicht führt beispielsweise zu einer sehr guten mechanischen Haftung der Metallisierungsschicht an der thermischen Kontaktfläche des Bauelements und an der thermischen Kontaktfläche des Substrats. Diese Teil—Metallisierungsschicht fungiert als Haftvermittlungsschicht . Bei einem Halbleiterbauelement hat sich beispielsweise eine Haftvermittlungsschicht aus Titan bewährt. Andere geeignete Materialien für die Haftvermittlungsschicht sind beispielsweise Chrom, Vanadium oder Zirkonium. Eine über der Haftvermittlungsschicht angeordnete zweite Teil-Metallisierungsschicht fungiert beispielsweise als Di fusionsbarriere. Eine derartige Teil— Metallisierungsschicht besteht beispielsweise aus einer Titan-Wolfram-Legierung. Eine dritte Teil- Metallisierungsschicht besteht beispielsweise aus einer Schicht aus thermisch hochleitfähigem Kupfer (λ = 400 W-m_1-K~ 1) , das für eine effiziente Ableitung der Wärmemenge sorgt. Es resultiert eine Metallisierungsschicht mit der Schichtfolge Titan/Titan-Wolfram/Kupfer . Vorzugsweise wird zum Anordnen relativ dünnerThe metallization layer can consist of a single layer. There is a single-layer metallization layer. In particular, the metallization layer has a multilayer structure with at least two partial metallization layers arranged one above the other. Each of the partial metallization layers is associated with different functions. A first partial metallization layer leads, for example, to very good mechanical adhesion of the metallization layer to the thermal contact surface of the component and to the thermal contact surface of the substrate. This partial metallization layer functions as an adhesion promoting layer. In the case of a semiconductor component, for example, an adhesion-promoting layer made of titanium has proven itself. Other suitable materials for the adhesion-promoting layer are, for example, chromium, vanadium or zirconium. A second partial metallization layer arranged above the adhesion-promoting layer functions, for example, as a diffusion barrier. Such a partial metallization layer consists, for example, of a titanium-tungsten alloy. A third partial metallization layer consists, for example, of a layer of highly thermally conductive copper (λ = 400 Wm _1 -K ~ 1 ), which ensures efficient dissipation of the amount of heat. The result is a metallization layer with the layer sequence titanium / titanium-tungsten / copper. It is preferred to be relatively thinner for placement
Metallisierungsschicht bzw. Teil— etallisierungsschichten ein Dampfabscheideverfahren durchgeführt. DasMetallization layer or partial metallization layers carried out a vapor deposition process. The
Dampfabscheideverfahren ist beispielsweise ein physikalisches Dampfabscheideverfahren (Physical Vapour Deposition, PVD) . Das PVD—Verfahren ist beispielsweise Sputtern. Ein chemisches Dampfabscheideverfahren (Chemical Vapour Deposition, CVD) ist ebenfalls denkbar.Vapor deposition is, for example, a physical vapor deposition (PVD) process. The PVD process is, for example, sputtering. A chemical vapor deposition (CVD) process is also conceivable.
In einer besonderen Ausgestaltung weist dieIn a special embodiment, the
Metallisierungsschicht eine galvanische Abscheidung auf. Die galvanische Abscheidung kann dabei eine Schichtdicke von bis zu mehreren hundert um aufweisen. Ein derart große Schichtdicke führt zu einer erhöhten thermischenMetallization layer on a galvanic deposition. The galvanic deposition can have a layer thickness of up to several hundred μm. Such a large layer thickness leads to an increased thermal
Leitfähigkeit der Metallisierungsschicht . Die galvanische Abscheidung besteht beispielsweise aus Kupfer. Das galvanische Abscheiden von Kupfer wird vorteilhaft auf einer dünnen, wenige um dicken Kupferschicht durchgeführt. Diese dünne Kupferschicht, die als Seed-Layer bezeichnet wird, wird beispielsweise durch ein Dampfabscheideverfahren erzeugt.Conductivity of the metallization layer. The galvanic deposition consists, for example, of copper. The galvanic deposition of copper is advantageously carried out on a thin copper layer a few micrometers thick. This thin copper layer, which is referred to as the seed layer, is produced, for example, by a vapor deposition process.
Damit die Metallisierungsschicht das elektrische Bauelement nicht unerwünscht kontaktiert, ist die Metallisierungs schicht von zu isolierenden Oberflächenabschnitten des Bauelements elektrisch isoliert. In einer besonderen Ausgestaltung ist daher die Metallisierungsschicht auf einer elektrischen Isolationsschicht zur elektrischen Isolierung eines Oberflächenabschnitts des Bauelements abgeschieden. Vorzugsweise weist die Isolationsschicht eine aus dem Bereich von einschließlich 50 μm bis einschließlich 500 μm und insbesondere eine aus dem Bereich von einschließlich 100 μm bis einschließlich 300 μm ausgewählte Isolationsschichtdicke auf. Dabei kann die Isolationsschicht einschichtig sein. Denkbar ist auch, dass die Isolationsschicht mehrschichtig ist. Die Isolationsschicht weist einen Mehrschichtaufbau mit mindestens zwei übereinander angeordneten Teil— Isolationsschichten auf.So that the metallization layer does not undesirably contact the electrical component, the metallization layer is electrically insulated from surface sections of the component to be insulated. In a special embodiment, the metallization layer is therefore deposited on an electrical insulation layer for the electrical insulation of a surface section of the component. The insulation layer preferably has an insulation layer thickness selected from the range from 50 μm to 500 μm inclusive and in particular from the range from 100 μm to 300 μm inclusive. The insulation layer can be single-layered. It is also conceivable that the insulation layer is multi-layered. The insulation layer has a multilayer structure at least two partial insulation layers arranged one above the other.
Zum Erzeugen der Isolationsschicht wird beispielsweise ein elektrisch isolierender Lack in einer entsprechenden Dicke aufgetragen. Der Lack wird in einem Druckverfahren auf das Bauelement und das Substrat aufgetragen. Dabei kann dafür gesorgt werden, dass der Lack nicht auf die thermischen Kontaktflächen des Bauelements und/oder des Substrats aufgebracht wird. Die thermischen Kontaktflächen bleiben frei. Die thermischen Kontaktflächen können aber auch erst nach dem Auftragen freigelegt werden. Beispielsweise werden in Isolationsschicht entsprechende Öffnungen nach einem Aushärten und/oder nach einem Trocknen des Lacks erzeugt. Das Erzeugen der Öffnung oder der Öffnungen wird insbesondere durch einen Photolithographieprozess und/oder durch Laserablation durchgeführt. Für den Photolithographieprozess wird insbesondere eine fotosensitiver Lack verwendet.To produce the insulation layer, for example, an electrically insulating lacquer is applied in a corresponding thickness. The varnish is applied to the component and the substrate in a printing process. It can be ensured that the lacquer is not applied to the thermal contact surfaces of the component and / or the substrate. The thermal contact areas remain free. However, the thermal contact areas can also only be exposed after application. For example, corresponding openings are produced in the insulation layer after curing and / or after the lacquer has dried. The opening or openings are produced in particular by a photolithography process and / or by laser ablation. In particular, a photosensitive varnish is used for the photolithography process.
In einer besonderen Ausgestaltung werden zum Erzeugen der Isolationsschicht auf dem Bauelement folgende weitere Verfahrensschritte durchgeführt: d) Auflaminieren mindestens einer elektrischen Isolationsfolie auf dem Bauelement und dem Substrat und e) Erzeugen einer Öffnung in der Isolationsfolie, so dass die thermische Kontaktfläche des Bauelements frei zugänglich ist. Die gleichen Verfahrensschritt können auch für das Freilegen der thermischen Kontaktstelle des Substrats durchgeführt werden. Es kann aber auch die Isolationsfolie derart auflaminiert werden, dass die thermische Kontaktfläche des Substrats frei bleibt. In diesem Fall ist ein Erzeugen einer Öffnung zum Freilegen der thermischen Kontaktfläche des Substrats nicht nötig.In a special embodiment, the following further method steps are carried out to produce the insulation layer on the component: d) laminating at least one electrical insulation film on the component and the substrate and e) creating an opening in the insulation film so that the thermal contact surface of the component is freely accessible , The same process step can also be carried out for exposing the thermal contact point of the substrate. However, the insulation film can also be laminated on in such a way that the thermal contact surface of the substrate remains free. In this case, it is not necessary to create an opening to expose the thermal contact surface of the substrate.
Die Isolationsschicht zum elektrischen Isolieren desThe insulation layer for electrical insulation of the
Bauelements wird von mindestens einer auf dem Bauelement und gegebenenfalls auf dem Substrat auflaminierten Isolationsfolie gebildet. Dabei wird zumindest ein Teil der Isolations olie derart auf dem elektrisch zu isolierenden Oberflächenabschnitt des Bauelements auflaminiert, dass eine Oberflächenkontur des Bauelements in einer Oberflächenkontur des Teils der Isolationsfolie abgebildet ist, die demComponent is laminated by at least one on the component and optionally on the substrate Insulation film formed. In this case, at least part of the insulation film is laminated onto the surface section of the component to be electrically insulated such that a surface contour of the component is depicted in a surface contour of the part of the insulation film that corresponds to the
Bauelement abgewandt ist. Die Oberflächenkontur betrifft nicht eine Rauhigkeit oder Welligkeit desComponent is facing away. The surface contour does not concern a roughness or waviness of the
Oberflächenabschnitts des Bauelements. Die Oberflächenkontur resultiert beispielsweise aus einer Kante des Bauelements. Die abgebildete Oberflächenkontur wird insbesondere nicht durch die Form das Bauelement alleine, sondern auch durch die Form des Substrats vorgegeben, auf dem das Bauelement angeordnet ist.Surface section of the component. The surface contour results, for example, from an edge of the component. The surface contour shown is in particular not specified by the shape of the component alone, but also by the shape of the substrate on which the component is arranged.
In einer besonderen Ausgestaltung wird das Auflaminieren der Isolationsfolie unter Vakuum durchgeführt. Durch das Auflaminieren unter Vakuum wird ein besonderes fester und inniger Kontakt zwischen der Isolationsfolie und dem Bauelement bzw. der Isolationsfolie und dem Substrat hergestellt.In a special embodiment, the insulation film is laminated on under vacuum. Laminating under vacuum creates a particularly firm and intimate contact between the insulation film and the component or the insulation film and the substrate.
Es kann nur eine einzige Isolationsfolie mit einer entsprechenden Folienstärke auflaminiert werden. Es können auch mehrere Teil—Isolationsfolien mit entsprechenden Folienstärken übereinander auflaminiert werden, die als Teil— Isolationsschichten zusammen die Isolationsschicht bilden. Eine dazu verwendete Isolationsfolie weist ein elektrisches Isolationsmaterial auf. Als Isolationsmaterial ist dabei jeder beliebige duroplastische (duromere) und/oder thermoplastische Kunststoff denkbar. Insbesondere weist die Isolationsfolie mindestens einen aus der Gruppe flüssigkristallines Polymer, organisch modifizierte Keramik, Polyacrylat, Polyimid, Polyisocyanat, Polyethylen, Polyphenol, Polyetheretherkiton, Polytetrafluorethylen und/oder Epoxid ausgewähltes elektrisches Isolationsmaterial auf. Mischungen der genannten Kunststoffe und/oder Copolymerisate aus Monomeren der Kunststoffe sind ebenfalls denkbar .Only a single insulation film with a corresponding film thickness can be laminated on. It is also possible to laminate several partial insulation foils with corresponding foil thicknesses on top of one another, which together form partial insulation layers to form the insulation layer. An insulation film used for this purpose has an electrical insulation material. Any thermosetting (thermosetting) and / or thermoplastic plastic is conceivable as insulation material. In particular, the insulation film has at least one electrical insulation material selected from the group consisting of liquid-crystalline polymer, organically modified ceramic, polyacrylate, polyimide, polyisocyanate, polyethylene, polyphenol, polyether ether kitone, polytetrafluoroethylene and / or epoxy. Mixtures of the plastics mentioned and / or Copolymers of monomers of plastics are also conceivable.
Prinzipiell ist es auch möglich, Isolationsfolien mit bereits erzeugten Öffnungen für die thermischen Kontaktflächen des Bauelements und/oder des Substrats aufzulaminieren. Dabei wird die Isolationsfolie derart auflaminiert, dass die Öffnungen über den thermischen Kontaktflächen des Bauelements und des Substrats zum Liegen kommen. Vorteilhaft werden aber die Öffnungen in der Isolationsfolie, wie oben beschrieben, erst nach dem Auflaminieren erzeugt. Das Erzeugen der Öffnungen in den Isolationsfolien erfolgt durch Materialabtrag. Dies kann fotolithografisch erfolgen. Insbesondere erfolgt das Erzeugen der Öffnungen in den Isolationsfolien durch Laserablation. Material wird mit Hilfe eines Lasers abgetragen. Zur Laserablation wird beispielsweise ein CO2— aser mit einer Wellenlänge von 9,24 μm verwendet. Denkbar ist auch der Einsatz eines UV—Lasers.In principle, it is also possible to laminate insulation foils with openings that have already been created for the thermal contact surfaces of the component and / or the substrate. The insulation film is laminated in such a way that the openings come to rest on the thermal contact surfaces of the component and the substrate. However, as described above, the openings in the insulation film are advantageously only created after the lamination. The openings in the insulation foils are created by removing material. This can be done photolithographically. In particular, the openings in the insulation films are produced by laser ablation. Material is removed using a laser. For example, a CO2 aser with a wavelength of 9.24 μm is used for laser ablation. The use of a UV laser is also conceivable.
In einer besonderen Ausgestaltung weisen die thermischeIn a special embodiment, the thermal
Kontaktfläche des Bauelements eine elektrische Kontaktfläche des Bauelements und die thermische Verbindungsleitung eine elektrische Verbindungsleitung zur elektrischen Kontaktierung der elektrischen Kontaktfläche des Bauelements auf. Die thermische Verbindungsleitung übernmmt auch die Funktion der elektrischen Verbindungsleitung, über die das Bauelement elektrisch kontaktiert ist.Contact surface of the component on an electrical contact surface of the component and the thermal connection line an electrical connection line for electrical contacting of the electrical contact surface of the component. The thermal connection line also takes over the function of the electrical connection line via which the component is electrically contacted.
Die Anordnung kann ein beliebiges steuerbares elektrisches Bauelement aufweisen. Das steuerbare elektrische Bauelement ist beispielsweise ein Halbleiterbauelement. Vorzugsweise ist das Halbleiterbauelement ein aus der Gruppe Diode, MOSFET, IGBT, Tyristor und/oder Bipolar-Transistor ausgewähltes Leistungshalbleiterbauelement. Die genannten Leistungshalbleiterbauelemente sind dazu geeignet, hoheThe arrangement can have any controllable electrical component. The controllable electrical component is, for example, a semiconductor component. The semiconductor component is preferably a power semiconductor component selected from the group consisting of a diode, MOSFET, IGBT, tyristor and / or bipolar transistor. The power semiconductor components mentioned are suitable for high
Ströme (einige 100 Ampere) zu steuern bzw. zu schalten. Zum Schalten verfügen die Leistungshalbleiterbauelemente jeweils über mindestens einen Eingangs-, einen Ausgangs— und einen Steuerkontakt. Diese Kontakte werden über entsprechende elektrische Kontaktflächen elektrisch kontaktiert. Dabei können die thermische Kontaktfläche des Bauelements und die elektrischen Kontaktflächen des Bauelements von einander verschieden sein. Insbesondere sind die thermische Kontaktfläche und die elektrische Kontaktfläche des Bauelements identisch.To control or switch currents (some 100 amperes). The power semiconductor components each have switches via at least one input, one output and one control contact. These contacts are electrically contacted via corresponding electrical contact surfaces. The thermal contact surface of the component and the electrical contact surfaces of the component can be different from one another. In particular, the thermal contact area and the electrical contact area of the component are identical.
Anhand mehrerer Ausführungsbeispiele und der dazugehörigenUsing several exemplary embodiments and the associated
Figuren wird die Erfindung im Folgenden näher erläutert. Die Figuren sind schematisch und stellen keine maßstabsgetreuen Abbildungen dar .Figures, the invention is explained in more detail below. The figures are schematic and do not represent true-to-scale illustrations.
Figur 1 zeigt eine Anordnung eines elektrischen Bauelements auf einem Substrat.FIG. 1 shows an arrangement of an electrical component on a substrate.
Figur 2 zeigt einen Ausschnitt der Anordnung des Bauelements auf dem Subs rat gemäß Figur 1.FIG. 2 shows a section of the arrangement of the component on the subs council according to FIG. 1.
Figur 3 zeigt ein Verfahren zum Herstellen der Anordnung.FIG. 3 shows a method for producing the arrangement.
Die Anordnung 1 weist mindestens ein steuerbares elektrisches Bauelement 2 auf einem Substrat 5 auf (Figur 1) . Das Substrat 5 ist ein DGB—Substrat mit einer Trägerschicht 50 und einer auf der Trägerschicht 50 aufgebrachten elektrisch leitfähigen Schicht 51 aus Kupfer. Die elektrisch leitfähige Schicht 51 wird von einer etwa 300 μm dicken Kupferfolie gebildet. Die Trägerschicht 50 besteht aus einem thermisch leitfähigen und elektrisch isolierendem Material. Dieses Material ist ein keramischer Werkstoff. In einem ersten Ausführungsbeispiel ist der keramische Werkstoff Aluminiumoxid. In weiteren dazu alternativen Ausgestaltungen ist der keramische Werkstoff Aluminiumnitrid, Siliziumcarbid oder Siliziumnitrid.The arrangement 1 has at least one controllable electrical component 2 on a substrate 5 (FIG. 1). The substrate 5 is a DGB substrate with a carrier layer 50 and an electrically conductive layer 51 made of copper applied to the carrier layer 50. The electrically conductive layer 51 is formed by an approximately 300 μm thick copper foil. The carrier layer 50 consists of a thermally conductive and electrically insulating material. This material is a ceramic material. In a first embodiment, the ceramic material is aluminum oxide. In further alternative configurations, the ceramic material is aluminum nitride, silicon carbide or silicon nitride.
Das elektrische Bauelement 2 ist ein Leistungshalbleiterbauelement in Form eines MOSFETS mit einer Höhe von etwa 350 μm. Das Leistungshalbleiterbauelement 2 ist auf der elektrisch leitenden Schicht 51 au gelötet. Es besteht eine (nicht dargestellte) Lotverbindung zwischen dem Leistungshalbleiterbauelement 2 und der elektrisch leitenden Schicht 51 aus Kupfer. Die Lotverbindung weist eine Schichtdicke von etwa 100 μm auf. Die elektrisch leitende Schicht 51 aus Kupfer dient der elektrischen Kontaktierung einer der Kontakte des Leistungshalbleiterbauelements 2 (Source, Gate oder Drain) .The electrical component 2 is a power semiconductor component in the form of a MOSFET with a Height of about 350 μm. The power semiconductor component 2 is soldered to the electrically conductive layer 51. There is a solder connection (not shown) between the power semiconductor component 2 and the electrically conductive layer 51 made of copper. The solder connection has a layer thickness of approximately 100 μm. The electrically conductive layer 51 made of copper is used for electrical contacting of one of the contacts of the power semiconductor component 2 (source, gate or drain).
Das Leistungshalbleiterbauelement 2 ist derart auf der elektrisch leitenden Schicht 51 aufgelötet, dass eine thermische Kontaktfläche 20 des Leistungshalbleiterbauelements 2 vom Substrat 5 abgewandt ist. Die thermische Kontaktfläche 20 ist von einer elektrischen Kontaktfläche 21 desThe power semiconductor component 2 is soldered onto the electrically conductive layer 51 such that a thermal contact surface 20 of the power semiconductor component 2 faces away from the substrate 5. The thermal contact surface 20 is from an electrical contact surface 21 of the
Leistungshalbleiterbauelements 2 gebildet. Über die elektrische Kontaktfläche 21 ist ebenfalls einer der Kontakte des Leistungshalbleiterbauelements 2 elektrisch kontaktiert. Dabei fungiert die thermische Verbindungsleitung 3 als elektrische Verbindungsleitung 6 zur elektrischen Kontaktierung der elektrischen Kontaktfläche 21 des Leistungshalbleiterbauelements 2. Zur Vervollständigung der elektrischen Kontaktierung ist die elektrische Verbindungsleitung 6 mit einer weiteren elektrisch leitenden Schicht 53 des Substrats 5 verbunden. Die weitere elektrisch leitende Schicht 53 ist ebenfalls aus einer auf der Trägerschicht 50 aufgebrachten Kupferfolie gebildet.Power semiconductor device 2 formed. One of the contacts of the power semiconductor component 2 is also electrically contacted via the electrical contact surface 21. The thermal connecting line 3 functions as an electrical connecting line 6 for electrically contacting the electrical contact surface 21 of the power semiconductor component 2. To complete the electrical contacting, the electrical connecting line 6 is connected to a further electrically conductive layer 53 of the substrate 5. The further electrically conductive layer 53 is likewise formed from a copper foil applied to the carrier layer 50.
Im Betrieb des Leistungshalbleiterbauelements 2 kann an diesen Kontakten eine hohe Wärmemenge auftreten. Zur Ableitung der entstehenden Wärmemenge ist eine thermische Verbindungsleitung 3 vorhanden. Die thermische Verbindungsleitung 3 ist mit der thermischen Kontaktfläche 20 des Leistungshalbleiterbauelements 2 und einer thermischenDuring operation of the power semiconductor component 2, a large amount of heat can occur at these contacts. A thermal connecting line 3 is provided to dissipate the amount of heat generated. The thermal connecting line 3 is connected to the thermal contact surface 20 of the power semiconductor component 2 and a thermal one
Kontaktfläche 52 des Substrats 5 thermisch leitend verbunden. Die thermische Kontaktfläche 52 des Substrats wird von der Trägerschicht 50 des Substrats 5 aus dem keramischen Werkstoff gebildet. Die thermische Verbindungsleitung 3 bildet einen Wärmeleitpfad 33 aus, über den die Wärmemenge per Wärmeleitung vom Leistungshalbleiterbauelement 2 hin zur Trägerschicht 50 des Substrats 5 abgeleitet wird.Contact surface 52 of the substrate 5 is thermally conductively connected. The thermal contact surface 52 of the substrate is from the Carrier layer 50 of substrate 5 is formed from the ceramic material. The thermal connection line 3 forms a heat conduction path 33, via which the amount of heat is conducted away by heat conduction from the power semiconductor component 2 to the carrier layer 50 of the substrate 5.
Die thermische Verbindungsleitung 3 weist eine Metallisierungsschicht 30 auf. Über die' Metallisierungsschicht 30 wird die im Betrieb des Leistungshalbleiterbauelements 2 entstehende Wärmemenge abgeleitet. Zum Ableiten der Wärmemenge ist die Metallisierungsschicht 30 der Verbindungsleitung unmittelbar auf der thermischen Kontaktfläche 52 des Substrats 5 bzw. der Trägerschicht 50 des Substrats 5 aufgebracht.The thermal connection line 3 has a metallization layer 30. The amount of heat generated during operation of the power semiconductor component 2 is dissipated via the metallization layer 30. To dissipate the amount of heat, the metallization layer 30 of the connecting line is applied directly to the thermal contact surface 52 of the substrate 5 or the carrier layer 50 of the substrate 5.
Die Metallisierungsschicht 30 der Verbindungsleitung 3 zeichnet sich durch einen Mehrschichtaufbau aus (Figur 2) . Die Metallisierungsschicht 30 besteht aus einzelnen, übereinander angeordneten Teil-Metallisierungsschichten 32. Die unterste Teil-Metallisierungsschicht 321, die direkt mit der thermischen Kontaktfläche 20 desThe metallization layer 30 of the connecting line 3 is distinguished by a multilayer structure (FIG. 2). The metallization layer 30 consists of individual partial metallization layers 32 arranged one above the other. The lowermost partial metallization layer 321, which is directly connected to the thermal contact surface 20 of the
Leistungshalbleiterbauelements 2 bzw. der thermischen Kontaktfläche 52 der Trägerschicht 50 des Substrats 5 verbunden ist, besteht aus Titan und fungiert als Haftvermittlungsschicht. Die darüber angeordnete Teil- Metallisierungsschicht 322 besteht aus einer Titan—Wolfram- Legierung. Diese Teil—Metallisierungsschicht 322 fungiert als Diffusionsbarriere. Über der als Diffusionsbarriere fungierenden Teil—Metallisierungsschicht 322 ist eine dünne Teil— etallisierungsschicht 323 aus Kupfer aufgebracht.Power semiconductor component 2 or the thermal contact surface 52 of the carrier layer 50 of the substrate 5 is connected, consists of titanium and functions as an adhesion-promoting layer. The partial metallization layer 322 arranged above is made of a titanium-tungsten alloy. This partial metallization layer 322 acts as a diffusion barrier. A thin partial metallization layer 323 made of copper is applied over the partial metallization layer 322 functioning as a diffusion barrier.
Schließlich ist über der dünnen Kupferschicht 323 eine Teil- Metallisierungsschicht 324 in Form galvanisch abgeschiedenem Kupfer vorhanden. Die dünne Kupferschicht 323 fungiert dabei als Seed-Layer für das galvanische Abscheiden des Kupfers. Während die Teil—Metallisierungsschichten 321, 322 und 323 jeweils nur wenige μm dick sind (das Erzeugen dieser Teil- Metallisierungsschichten erfolgt durch ein PVD-Verfahren) ist die Teil-Metallisierungsschicht 324 mit einer relativ großen Schichtdicke aufgetragen. Es resultiert eineFinally, a partial metallization layer 324 in the form of electrodeposited copper is present over the thin copper layer 323. The thin copper layer 323 acts as a seed layer for the galvanic deposition of the copper. While the partial metallization layers 321, 322 and 323 are each only a few μm thick (these partial metallization layers are produced by a PVD method) the partial metallization layer 324 is applied with a relatively large layer thickness. The result is one
Gesamtschichtdicke 31 der Metallisierungsschicht 30 von etwa 200 μm. Dabei wird die Metallisierungsschicht 30 nahezu vollständig von der dicken Teil-Metallisierungsschicht 324 gebildet .Total layer thickness 31 of the metallization layer 30 of approximately 200 μm. The metallization layer 30 is almost completely formed by the thick partial metallization layer 324.
Aufgrund der hohen thermischen Leitfähigkeit des Kupfers von etwa 400 w-ιrf1-κ~1 resultiert ein Wärmeableitungspfad 38, bei dem die Wärmemenge von der thermischen Kontaktfläche 21 desDue to the high thermal conductivity of the copper of about 400 w-ιrf 1 -κ ~ 1 results in a heat dissipation path 38, in which the amount of heat from the thermal contact surface 21 of the
Leistungshalbleiterbauelements 2 effizient zum Substrat 5 hin weitergeleitet wird. Da auch der keramische Werkstoff der Trägerschicht 52 des Substrats 5 über eine relativ hohe thermische Leitfähigkeit verfügt, kann die Wärmemenge effizient vom Leistungshalbleiterbauelement 2 wegtransportiert werden.Power semiconductor component 2 is efficiently forwarded to the substrate 5. Since the ceramic material of the carrier layer 52 of the substrate 5 also has a relatively high thermal conductivity, the amount of heat can be efficiently transported away from the power semiconductor component 2.
Zum Herstellen der Anordnung 1 wird auf einem DCB—Substrat 5 das Leistungshalbleiterbauelement 2 aufgelötet. Nachfolgend wird eine Isolationsfolie 4 auflaminiert (Figur 3,In order to produce the arrangement 1, the power semiconductor component 2 is soldered onto a DCB substrate 5. An insulation film 4 is then laminated on (FIG. 3,
Bezugszeichen 301) . Dadurch wird der Oberflächenabschnitt 23 des Leistungshalbleiterbauelements 2 elektrisch isoliert. Das Auflaminieren erfolgt unter Vakuum. Dabei entsteht ein fester und inniger Kontakt zwischen der Isolationsfolie 4, dem Leistungshalbleiterbauelement 2 und dem Substrat 5. DieReference numeral 301). As a result, the surface section 23 of the power semiconductor component 2 is electrically insulated. The lamination is carried out under vacuum. This creates a firm and intimate contact between the insulation film 4, the power semiconductor component 2 and the substrate 5. Die
Isolationsfolie 4 wird dabei derart aufgebracht, dass eine Oberflächenkontur 25, die sich aus demInsulation film 4 is applied in such a way that a surface contour 25 which results from the
Leistungshalbleiterbauelement 2, der elektrisch leitenden Schicht 51 und der Trägerschicht 50 des DCB-Substrats ergibt, in einer Oberflächenkontur 47 eines Teils der Isolationsfolie 4 abgebildet wird. Eine dem Substrat 5 und dem Leistungshalbleiterbauelement 2 abgekehrte Oberfläche der Isolationsfolie 4 zeigt im Wesentlichen die gleiche Oberflächenkontur wie das Leistungshalbleiterbauelement 2 und das Substrat. Die Isolationsfolie 4 folgt der Topografie des Leistungshalbleiterbauelements 2 und des Substrats 5. Die Isolationsfolie 4 weist eine Folienstärke von etwa 100 μm auf. Es resultiert eine Isolationsschichtdicke 41 von etwa 100 um. Dabei wird ein Höhenunterschied von etwa 850 μm überwunden, der durch die Schichtdicke der elektrisch leitende Schicht 51, der Schichtdicke der Lotverbindung und die Höhe 22 des Leistungshalbleiterbauelements 2 gegeben ist.Power semiconductor component 2, the electrically conductive layer 51 and the carrier layer 50 of the DCB substrate results, is imaged in a surface contour 47 of part of the insulation film 4. A surface of the insulation film 4 facing away from the substrate 5 and the power semiconductor component 2 essentially shows the same surface contour as the power semiconductor component 2 and the substrate. The insulation film 4 follows the topography of the power semiconductor component 2 and the substrate 5. The insulation film 4 has a film thickness of approximately 100 μm on. The result is an insulation layer thickness 41 of approximately 100 μm. A height difference of approximately 850 μm is overcome, which is given by the layer thickness of the electrically conductive layer 51, the layer thickness of the solder connection and the height 22 of the power semiconductor component 2.
Im nächsten Verfahrensschritt wird eine Öffnung 42 zum Kontaktieren der thermischen Kontaktfläche 20 des Leistungshalbleiterbauelements 2 und eine Öffnung 43 zum Kontaktieren der thermischen Kontaktfläche 52 des Substrats 5 der in der Isolationsfolie 4 erzeugt (Figur 3, Bezugszeichen 302) . Es wird jeweils ein Fenster in der Isolationsfolie 4 geö fnet. Das Öffnen der Fenster erfolgt durch Materialabtrag mittels Laserablation. Dazu wird ein Cθ2-Laser mit einer Wellenlänge von 9,24 μm verwendet. Im Anschluss an denIn the next method step, an opening 42 for contacting the thermal contact surface 20 of the power semiconductor component 2 and an opening 43 for contacting the thermal contact surface 52 of the substrate 5 are produced in the insulation film 4 (FIG. 3, reference number 302). One window each is opened in the insulation film 4. The windows are opened by removing material using laser ablation. For this purpose, a CO 2 laser with a wavelength of 9.24 μm is used. Following the
Materialabtrag wird ein Reinigungsschritt durchgeführt, um Reste des Isolationsmaterials der Isolationsfolie 4 zu entfernen.Material removal, a cleaning step is carried out in order to remove residues of the insulation material of the insulation film 4.
Nach dem Herstellen der Öffnungen 42 und 43 wird dieAfter the openings 42 and 43 have been made
Metallisierungsschicht 30 auf der thermischen Kontaktfläche 21 des Leistungshalbleiterbauelements 2, der thermischen Kontaktfläche 52 des Substrats 5 und der Isolationsfolie 4 aufgetragen (Figur 3, Bezugszeichen 303) . Die Metallisierungsschicht 30 wird derart aufgetragen, dass jeweils in einem Dampfabscheideverfahren zunächst die Teil- Metallisierungsschicht 321 aus Titan, dann die Teil- Metallisierungsschicht 322 aus der Titan-Wolfram-Legierung und anschließend eine dünne Kupferschicht 323 abgeschieden wird. Nachfolgend wird Kupfer galvanisch abgeschieden. Es entsteht die Teil-Metallisierungsschicht 324 in Form einer Kupfer-Abscheidung.Metallization layer 30 applied to the thermal contact surface 21 of the power semiconductor component 2, the thermal contact surface 52 of the substrate 5 and the insulation film 4 (FIG. 3, reference number 303). The metallization layer 30 is applied in such a way that in each case first the partial metallization layer 321 made of titanium, then the partial metallization layer 322 made of the titanium-tungsten alloy and then a thin copper layer 323 are deposited in a vapor deposition process. Copper is then electrodeposited. The partial metallization layer 324 is formed in the form of a copper deposition.
Neben dem Wärmeableitpfad 33 über die Metallisierungsschicht 30 der thermischen Verbindungsleitung 3 existiert bei der beschriebenen Anordnung 1 ein weiterer Wärmeableitpfad 34, der vom Leistungshalbleiterbauelement 2 über die Lotverbindung und über die elektrisch leitende Schicht 51 zur Trägerschicht 51 des Substrats 5 führt. Dadurch wird die Wärmemenge, die im Betrieb des Leistungshalbleiterbauelements 2 entsteht, mit einer großen Wirkung in Richtung des Substrats 5 bzw. der Trägerschicht 52 des Substrats 5 abgeleitet. Die Trägerschicht 52 fungiert als Wärmesenke für die Wärmemenge. Zur Erhöhung der Effizienz, mit der die Wärmemenge abgeleitet wird, ist in einer weiteren Ausführungsform das Substrat 5 mit einer nicht dargestellten, weiteren Wärmesenke verbunden. Die weitere Wärmesenke ist ein Kühlkörper oder ein Kühlfluid. In addition to the heat dissipation path 33 via the metallization layer 30 of the thermal connecting line 3, there is a further heat dissipation path 34 in the arrangement 1 described, which extends from the power semiconductor component 2 via the Solder connection and leads via the electrically conductive layer 51 to the carrier layer 51 of the substrate 5. As a result, the amount of heat that arises during operation of the power semiconductor component 2 is dissipated with a great effect in the direction of the substrate 5 or the carrier layer 52 of the substrate 5. The carrier layer 52 functions as a heat sink for the amount of heat. In order to increase the efficiency with which the amount of heat is dissipated, the substrate 5 is connected to a further heat sink, not shown, in a further embodiment. The further heat sink is a heat sink or a cooling fluid.

Claims

Patentansprüche claims
1. Anordnung (1) mindestens eines steuerbaren elektrischen Bauelements (2) auf einem Substrat (5) , wobei - das Substrat (5) mindestens eine thermische Kontaktfläche (52) mit einem thermisch leitfähigen Material aufweist, das Bauelement (2) mindestens eine thermische Kontaktfläche (20) aufweist, an der im Betrieb des Bauelements (2) eine bestimmte Wärmemenge auftritt, das Bauelement (2) derart auf dem Substrat (5) angeordnet ist, dass die thermische Kontaktfläche (20) des Bauelements (2) dem Substrat (5) abgekehrt ist, mindestens eine thermische Verbindungsleitung (3) zum Übertragen der bestimmten Wärmemenge von der thermischen Kontaktfläche (20) des Bauelements (2) auf die thermische Kontaktfläche (52) des Substrats (5) vorhanden ist und die thermische Verbindungsleitung (3) eine auf der Anordnung (1) abgeschiedene Metallisierungsschicht (30) aufweist.1. Arrangement (1) of at least one controllable electrical component (2) on a substrate (5), wherein - the substrate (5) has at least one thermal contact surface (52) with a thermally conductive material, the component (2) has at least one thermal Contact surface (20) on which a certain amount of heat occurs during operation of the component (2), the component (2) is arranged on the substrate (5) such that the thermal contact surface (20) of the component (2) to the substrate ( 5), there is at least one thermal connecting line (3) for transferring the specific amount of heat from the thermal contact surface (20) of the component (2) to the thermal contact surface (52) of the substrate (5) and the thermal connecting line (3) has a metallization layer (30) deposited on the arrangement (1).
2. Anordnung nach Anspruch 1, wobei das thermisch leitfähige Material mindestens einen aus der Gruppe Aluminiumnitrid und/oder Aluminiumoxid ausgewählten keramischen Werkstoff aufweist.2. Arrangement according to claim 1, wherein the thermally conductive material comprises at least one ceramic material selected from the group consisting of aluminum nitride and / or aluminum oxide.
3. Anordnung nach Anspruch 1 oder 2, wobei die Metallisierungsschicht (30) einen Mehrschichtaufbau mit mindestens zwei übereinander angeordneten Teilmetallisierungsschichten (32, 321, 322, 323, 324) aufweist .3. Arrangement according to claim 1 or 2, wherein the metallization layer (30) has a multilayer structure with at least two superposed partial metallization layers (32, 321, 322, 323, 324).
4. Anordnung nach einem der Ansprüche 1 bis 3, wobei die Metallisierungsschicht (30) eine galvanische Abscheidung (324) aufweist. 4. Arrangement according to one of claims 1 to 3, wherein the metallization layer (30) has an electrodeposition (324).
5. Anordnung nach einem der Ansprüche 1 bis 4, wobei Metallisierungsschicht (30) mindestens ein aus der Gruppe Aluminium, Gold, Kupfer, Molybdän, Silber, Titan und/oder Wolfram ausgewähltes Metall aufweisen.5. Arrangement according to one of claims 1 to 4, wherein the metallization layer (30) have at least one selected from the group aluminum, gold, copper, molybdenum, silver, titanium and / or tungsten.
6. Anordnung nach einem der Ansprüche 1 bis 5, wobei die Metallisierungsschicht (30) auf einer elektrischen Isolationsschicht (4) zur elektrischen Isolierung eines Oberflächenabschnitts (23) des Bauelements (2) abgeschieden ist.6. Arrangement according to one of claims 1 to 5, wherein the metallization layer (30) on an electrical insulation layer (4) for electrical insulation of a surface portion (23) of the component (2) is deposited.
7. Anordnung nach einem der Ansprüche 1 bis 6, wobei die Isolationsschicht (4) eine aus dem Bereich von einschließlich 50 μm bis einschließlich 500 μm und insbesondere eine aus dem Bereich von einschließlich 100 μm bis einschließlich 300 μm ausgewählte Isolationsschichtdicke (41) aufweist.7. Arrangement according to one of claims 1 to 6, wherein the insulation layer (4) has a selected from the range of 50 microns up to and including 500 microns and in particular from the range of 100 microns up to and including 300 microns insulation layer thickness (41).
8. Anordnung nach Anspruch 6 oder 7, wobei die elektrische Isolationsschicht (4) von einer auf dem Bauelement (2) auflaminierten Isolationsfolie gebildet ist.8. Arrangement according to claim 6 or 7, wherein the electrical insulation layer (4) of an on the component (2) laminated insulation film is formed.
9. Anordnung nach Anspruch 8, wobei zumindest ein Teil der Isolationsfolie (4) derart auf dem Oberflächenabschnitt (23) des Bauelements (2) auflaminiert ist, dass eine Oberflächenkontur (25) des Bauelements (2) in einer Oberflächenkontur (44) des Teils der Isolationsfolie (4) abgebildet ist, die dem Bauelement (2) abgewandt ist.9. The arrangement according to claim 8, wherein at least part of the insulating film (4) is laminated onto the surface section (23) of the component (2) such that a surface contour (25) of the component (2) in a surface contour (44) of the part the insulation film (4) is shown, which faces away from the component (2).
10. Anordnung nach Anspruch 8 oder 9, wobei die Isolationsfolie (4) ein aus der Gruppe flüssigkristallines Polymer, organisch modifizierte Keramik, Polyacrylat, Polyimid, Polyisocyanat, Polyethylen, Polyphenol, Polyetheretherketon, Polytetrafluorethylen und/oder Epoxid ausgewähltes elektrisches Isolationsmaterial aufweist. 10. The arrangement according to claim 8 or 9, wherein the insulation film (4) comprises an electrical insulation material selected from the group consisting of liquid-crystalline polymer, organically modified ceramic, polyacrylate, polyimide, polyisocyanate, polyethylene, polyphenol, polyether ether ketone, polytetrafluoroethylene and / or epoxy.
11. Anordnung nach einem der Ansprüche 1 bis 10, wobei die thermische Kontaktfläche (20) des Bauelements (2) eine elektrische Kontaktfläche (21) des Bauelements (2) und die thermische Verbindungsleitung (3) eine elektrische Verbindungsleitung (6) zur elektrischen Kontaktierung der elektrischen Kontaktfläche (21) des Bauelements (2) aufweisen.11. Arrangement according to one of claims 1 to 10, wherein the thermal contact surface (20) of the component (2) an electrical contact surface (21) of the component (2) and the thermal connection line (3) an electrical connection line (6) for electrical contacting the electrical contact surface (21) of the component (2).
12. Anordnung nach einem der Ansprüche 1 bis 11, wobei das Bauelement (2) ein Halbleiterbauelement ist.12. Arrangement according to one of claims 1 to 11, wherein the component (2) is a semiconductor component.
13. Anordnung nach Anspruch 12, wobei das Halbleiterbauelement ein aus der Gruppe Diode, MOSFET, IGBT, Tyristor und/oder Bipolar-Transistor ausgewähltes Leistungshalbleiterbauelement ist.13. The arrangement according to claim 12, wherein the semiconductor component is a power semiconductor component selected from the group consisting of a diode, MOSFET, IGBT, tyristor and / or bipolar transistor.
14. Verfahren zum Herstellen einer Anordnung nach einem der Ansprüche 1 bis 13 mit folgenden Verfahrensschritten: a) Anordnen des Bauelements (2) auf dem Substrat (5) derart, dass die thermische Kontaktfläche (21) des Bauelements (2) dem Substrat (5) abgekehrt ist, b) Erzeugen einer elektrischen Isolationsschicht (4) auf dem Bauelement (2) derart, dass die thermische Kontaktfläche (20) des Bauelements (2) und die thermische Kontaktfläche (52) des Substrats (5) frei zugänglich sind, und c) Abscheiden mindestens einer Metallisierungsschicht (30) auf der thermischen Kontaktfläche (20) des Bauelements (2), der thermischen Kontaktfläche (52) des Substrats (5) und der Isolationsschicht (4) zum Herstellen der thermischen Verbindungsleitung (3) zwischen den thermischen Kontaktflächen (20, 52) .14. A method for producing an arrangement according to one of claims 1 to 13 with the following method steps: a) arranging the component (2) on the substrate (5) such that the thermal contact surface (21) of the component (2) to the substrate (5 ) has turned away, b) producing an electrical insulation layer (4) on the component (2) such that the thermal contact surface (20) of the component (2) and the thermal contact surface (52) of the substrate (5) are freely accessible, and c) depositing at least one metallization layer (30) on the thermal contact surface (20) of the component (2), the thermal contact surface (52) of the substrate (5) and the insulation layer (4) for producing the thermal connecting line (3) between the thermal Contact areas (20, 52).
15. Verfahren nach Anspruch 14, wobei das Erzeugen der elektrischen Isolationsschicht (4) folgende weiteren Verfahrensschritte umfasst: d) Auflaminieren mindestens einer elektrischen Isolationsfolie (4) auf dem Bauelement (2) und dem Substrat (5) und e) Erzeugen mindestens einer Öffnung (42) in der Isolationsfolie (4), so dass die thermische Kontakt läche (20) des Bauelements (2) und/oder die thermische Kontaktfläche (52) des Substrats (5) frei zugänglich sind.15. The method according to claim 14, wherein the production of the electrical insulation layer (4) comprises the following further method steps: d) laminating at least one electrical insulation film (4) on the component (2) and the substrate (5) and e) creating at least one opening (42) in the insulation film (4) so that the thermal contact surface (20) of the component (2) and / or the thermal contact surface (52) of the substrate (5) are freely accessible.
16. Verfahren nach Anspruch 15, wobei das Auflaminieren der Isolationsfolie (4) unter Vakuum erfolgt.16. The method according to claim 15, wherein the lamination of the insulation film (4) is carried out under vacuum.
17. Verfahren nach Anspruch 15 oder 16, wobei das Erzeugen der Öffnung durch einen Photolithographieprozess und/oder durch Laserablation durchgeführt wird. 17. The method according to claim 15 or 16, wherein the generation of the opening is carried out by a photolithography process and / or by laser ablation.
PCT/EP2005/051225 2004-04-29 2005-03-17 Assembly of a controllable electrical component on a substrate and method for producing the assembly WO2005106951A1 (en)

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