WO2005106930A1 - Procede d’exposition, systeme d’exposition, et procede de fabrication de dispositif - Google Patents

Procede d’exposition, systeme d’exposition, et procede de fabrication de dispositif Download PDF

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Publication number
WO2005106930A1
WO2005106930A1 PCT/JP2005/007696 JP2005007696W WO2005106930A1 WO 2005106930 A1 WO2005106930 A1 WO 2005106930A1 JP 2005007696 W JP2005007696 W JP 2005007696W WO 2005106930 A1 WO2005106930 A1 WO 2005106930A1
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WIPO (PCT)
Prior art keywords
substrate
exposure
shot area
liquid
shot
Prior art date
Application number
PCT/JP2005/007696
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English (en)
Japanese (ja)
Inventor
Shigeru Hirukawa
Yasuhiro Omura
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2006512760A priority Critical patent/JPWO2005106930A1/ja
Publication of WO2005106930A1 publication Critical patent/WO2005106930A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Definitions

  • Exposure method Exposure method, exposure apparatus and device manufacturing method
  • the present invention relates to an exposure method, an exposure apparatus, and a device manufacturing method for exposing a substrate by irradiating the substrate with exposure light via a liquid.
  • Semiconductor devices and liquid crystal display devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate.
  • An exposure apparatus used in the photolithography process has a mask stage for supporting a mask and a substrate stage for supporting a substrate, and projects the pattern of the mask onto the substrate via a projection optical system. Is exposed.
  • further improvement in the resolution of the projection optical system has been desired in order to cope with higher integration of device patterns.
  • the resolution of the projection optical system increases as the wavelength of the exposure light used decreases and as the numerical aperture of the projection optical system increases. Therefore, the wavelength of the exposure light used in the exposure apparatus is becoming shorter year by year, and the numerical aperture of the projection optical system is also increasing.
  • the wavelength of exposure light which is 248 nm of KrF excimer laser, and 193 nm of ArF excimer laser with shorter wavelength are also in practical use.
  • the depth of focus (DOF) is as important as the resolution.
  • the resolution R and the depth of focus ⁇ are respectively represented by the following equations.
  • ⁇ is the exposure wavelength
  • ⁇ is the numerical aperture of the projection optical system
  • k and k are process coefficients.
  • a liquid immersion method disclosed in Patent Document 1 below has been proposed.
  • This immersion method uses a projection optical system.
  • the space between the lower surface of the substrate and the surface of the substrate is filled with a liquid such as water or an organic solvent to form an immersion area, and the wavelength of the exposure light in the liquid becomes The resolution is improved by utilizing the fact that it is about 1.2 to 1.6), and the depth of focus is increased by about n times.
  • Patent Document 1 International Publication No. 99Z49504 pamphlet
  • a substrate including a film on a substrate constituting the substrate
  • the heat causes the liquid in an immersion area on the substrate to change in temperature or temperature. Distribution may occur. Since a change in temperature or a temperature distribution of the liquid causes a change in the refractive index of the liquid, it affects the imaging characteristics of the projection optical system via the liquid, and there is a possibility that a pattern cannot be accurately formed on the substrate.
  • the present invention has been made in view of such circumstances, and even when an immersion method is applied, an exposure method, an exposure apparatus, and an exposure method capable of accurately forming a pattern on a substrate. It is an object to provide a device manufacturing method.
  • the present invention employs the following configuration corresponding to Figs. 1 to 10 shown in the embodiment.
  • reference numerals in parentheses attached to each element are merely examples of the element, and there is no intention to limit each element.
  • the exposure method of the present invention irradiates a substrate (P) with exposure light (EL) via a projection optical system (PL) and a liquid (LQ), thereby forming a plurality of shot areas on the substrate (P).
  • EL exposure light
  • PL projection optical system
  • LQ liquid
  • S1 to S45 sequentially exposing
  • adjacent shots of the plurality of shot areas (S1 to S45) on the substrate (P) are used.
  • the exposure order of a plurality of shot areas on the substrate (P) is determined so that the exposure areas are not continuously exposed.
  • the adjacent shot area of the plurality of shot areas on the substrate is not continuously exposed, so that the temperature change of the liquid on the shot area to be exposed can be prevented.
  • the occurrence of temperature distribution is suppressed. That is, for example, when the exposure light is irradiated to expose the first shot area on the substrate, the first shot area on the substrate is heated, and the heat causes the liquid on or near the first shot area to be exposed. There is a possibility that temperature changes and temperature distribution may occur. In that case, the liquid on the second shot area adjacent to the first shot area may have a temperature change or a temperature distribution due to the exposure of the first shot area.
  • the liquid in the second shot area has already undergone a temperature change or temperature distribution.
  • a pattern cannot be formed with high accuracy on the second shot area. Therefore, by not continuously exposing adjacent shot regions among a plurality of shot regions on the substrate, a pattern can be formed on the substrate with high accuracy.
  • the exposure method of the present invention includes irradiating the substrate (P) with exposure light (EL) via the projection optical system (PL) and the liquid (LQ), thereby forming a shot area (EL) on the substrate (P).
  • the detection light (La) is projected onto the surface of the shot area (S1) via the liquid (LQ), and the shot area (S1) is projected based on the reflected light.
  • the surface position information of the surface is detected, and based on the detected surface position information, the positional relationship between the image plane and the shot area (SI) surface by the projection optical system (PL) is adjusted.
  • the irradiation of the exposure light (EL) on the shot area (S1) starts, and during the exposure of the shot area (S1), the surface position obtained by projecting the detection light (La) onto the surface of the shot area (S1) It is characterized in that the adjustment of the positional relationship based on the information is stopped.
  • optical detection and detection of surface position information of a shot area surface using detection light without being affected by a temperature change or temperature distribution of a liquid caused by exposure light exposure It is possible to accurately adjust the positional relationship between the image plane and the shot area surface by the projection optical system based on the obtained plane position information.
  • the substrate is heated by the exposure light irradiation, and the heat causes the liquid on the substrate in the vicinity of the exposure light irradiation region to undergo a temperature change or temperature distribution. Can cause. Therefore, if the detection of the surface position information of the shot area surface and the adjustment of the positional relationship are performed in parallel with the exposure of the substrate (irradiation of exposure light), the temperature of the liquid will change and the temperature distribution will occur.
  • the surface position information of the shot area surface cannot be accurately detected due to the temperature change and the temperature distribution of the liquid.
  • the position of the shot area surface cannot be accurately aligned with the image plane via the liquid of the projection optical system, and a pattern may not be accurately formed on the substrate. Therefore, before irradiating the next shot area with exposure light, the surface position information of the next shot area surface to be exposed is optically detected through the liquid using the detection light, and the detected surface is detected.
  • the positional relationship between the image plane and the surface of the shot area by the projection optical system is adjusted based on the position information, and after the adjustment is completed, irradiation of the shot area with exposure light is started. Then, during the exposure of the shot area, the adjusting operation of the positional relationship based on the surface position information obtained by projecting the detection light onto the shot area is stopped. By doing so, it is possible to expose the shot area in a state where the shot area surface and the image plane of the projection optical system via the liquid are accurately aligned. Therefore, a pattern can be accurately formed on the substrate.
  • the exposure method of the present invention is directed to an exposure method for irradiating a substrate (P) with exposure light (EL) via a liquid (LQ) to expose a shot area (for example, S1) on the substrate.
  • LQ the detection light (La) is projected onto the surface of the shot area (S1), surface information of the surface of the shot area (S1) is detected based on the reflected light, and the detected surface position information is detected.
  • the position of the surface of the shot area (S1) is adjusted based on the position, and after the adjustment of the positional relationship is completed, the irradiation of the exposure light onto the shot area (S1) is started. Is characterized in that the position adjustment based on the surface position information obtained by projecting the detection light (La) on the shot area surface is stopped.
  • the exposure apparatus of the present invention irradiates the substrate (P) with exposure light (EL) through the liquid (LQ).
  • an exposure apparatus (EX) that exposes a shot area (for example, S1) on the substrate (P)
  • the detection light (La) is projected onto the surface of the shot area (S1) via the liquid (LQ), and the reflected light is reflected.
  • a detection system (4) that detects the surface position information of the surface of the shot area (S1) based on light, and adjusts the position of the surface of the shot area (S1) based on the detected surface position information!
  • An adjustment system (52), a detection system (4), and a control system (CONT) for controlling the adjustment system (52) are provided.
  • the exposure of the exposure light (EL) onto (S1) starts, and during the exposure of the shot area (S1), the surface position obtained by projecting the detection light (La) onto the surface of the shot area (S1).
  • the feature is to stop the position adjustment based on the information.
  • a device manufacturing method uses the above-described exposure method and exposure apparatus. According to the present invention, it is possible to provide a device having a pattern formed with good pattern transfer accuracy and capable of exhibiting desired performance.
  • a pattern when exposing a substrate based on the liquid immersion method, a pattern can be accurately formed on the substrate.
  • FIG. 1 is a schematic configuration diagram showing one embodiment of an exposure apparatus according to the present invention.
  • FIG. 2 is a plan view of the substrate stage as viewed from above.
  • FIG. 3 is a diagram for explaining a relationship between a liquid supply mechanism and a liquid recovery mechanism and a projection area.
  • FIG. 4 is a schematic view for explaining an embodiment of the exposure method of the present invention.
  • FIG. 5 is a schematic diagram for explaining an embodiment of the exposure method of the present invention.
  • FIG. 6 is a schematic diagram for explaining an embodiment of the exposure method of the present invention.
  • FIG. 7 is a diagram for explaining the relationship between a liquid supply mechanism and a liquid recovery mechanism and a projection area.
  • FIG. 8 is a schematic diagram for explaining another embodiment of the exposure method of the present invention.
  • FIG. 9 is a schematic diagram for explaining a moving direction of a mask and a substrate in the scanning exposure apparatus.
  • FIG. 10 is a flowchart illustrating an example of a semiconductor device manufacturing process.
  • FIG. 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus according to the present invention
  • FIG. 2 is a plan view of a substrate stage PST.
  • the exposure apparatus EX includes a mask stage MST supporting a mask M, a substrate stage PST supporting a substrate P, and a mask M supported by the mask stage MST.
  • An illumination optical system IL that illuminates with the exposure light EL
  • a projection optical system PL that projects an image of the pattern of the mask M illuminated with the exposure light EL onto the substrate P supported by the substrate stage PST
  • a control device CONT for controlling the entire operation.
  • the exposure apparatus EX of the present embodiment is an immersion exposure apparatus to which an immersion method is applied in order to substantially shorten the wavelength of exposure light to improve resolution and to substantially increase the depth of focus.
  • pure water is used for the liquid LQ.
  • the exposure apparatus EX projects at least a portion of the pattern image of the mask M onto the substrate P including the projection area AR1 of the projection optical system PL by the liquid LQ supplied from the liquid supply mechanism 10 while projecting the pattern image on the substrate P.
  • the liquid immersion area AR2 of the liquid LQ is formed.
  • the exposure apparatus EX fills the liquid LQ between the optical element 2 at the tip of the projection optical system PL and the surface (exposure surface) of the substrate P, and fills the space between the projection optical system PL and the substrate P.
  • the pattern image of the mask M is projected onto the substrate P via the liquid LQ and the projection optical system PL, and the substrate P is exposed.
  • the projection area AR1 of the projection optical system PL is set to have a substantially square shape, and has substantially the same shape as the shot area set on the substrate P.
  • the exposure apparatus EX the pattern of the mask M is collectively projected on one shot area while the mask M and the substrate P are stationary, and the substrate P is sequentially moved stepwise.
  • a step-and-repeat projection exposure apparatus for exposing a shot area is used will be described.
  • the predetermined direction in the horizontal plane is the X-axis direction
  • the direction perpendicular to the X-axis direction in the horizontal plane is the Y-axis direction
  • Direction is the Z-axis direction.
  • substrate used herein includes a substrate such as a semiconductor wafer coated with a photosensitive material (resist) or a material provided with a protective film (top coat) on the photosensitive material. Includes a reticle on which a device pattern to be reduced and projected on a substrate is formed.
  • the illumination optical system IL illuminates the mask ⁇ supported by the mask stage MST with the exposure light EL.
  • the illumination light system IL is used to make the illuminance of the exposure light source and the light flux emitted from the exposure light source uniform. It has an integrator, a condenser lens that collects the exposure light EL from the optical integrator, a relay lens system, and a variable field stop that sets the illumination area on the mask ⁇ ⁇ ⁇ with the exposure light EL.
  • a predetermined illumination area on the mask ⁇ is illuminated by the illumination optical system IL with exposure light EL having a uniform illuminance distribution.
  • Exposure exposure light EL includes, for example, a deep ultraviolet light (DUV) such as a bright line (g line, h line, i line) emitted from a mercury lamp and a KrF excimer laser beam (wavelength 248 nm). Light) and vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F laser light (wavelength 157 nm).
  • DUV deep ultraviolet light
  • VUV light vacuum ultraviolet light
  • ArF excimer laser light is used.
  • the liquid LQ in the present embodiment is pure water, and can transmit even if the exposure light EL is ArF excimer laser light. Pure water can also transmit the above-mentioned bright lines (g-line, h-line, i-line) and far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm).
  • the mask stage MST is movable while holding the mask M, is two-dimensionally movable in a plane perpendicular to the optical axis AX of the projection optical system PL, ie, in the XY plane, and is minute in the ⁇ Z direction. It is rotatable.
  • the mask stage MST is driven by a mask stage driving device MSTD such as a linear motor.
  • the mask stage drive MSTD is controlled by the controller CONT.
  • the movable mirror 150 is provided on the mask stage MST.
  • a laser interferometer 151 is provided at a predetermined position.
  • the position and the rotation angle of the mask M on the mask stage MST in the two-dimensional direction are measured in real time by the laser interferometer 151 using the movable mirror 150, and the measurement result is output to the control device CONT.
  • the controller CONT controls the position of the mask M supported by the mask stage MST by driving the mask stage driving device MSTD based on the measurement result of the laser interferometer 151.
  • the projection optical system PL is for projecting an image of the pattern of the mask M onto the substrate ⁇ at a predetermined projection magnification ⁇ , and includes an optical element (lens) 2 provided at the tip of the substrate ⁇ . Including a plurality of optical elements, and these optical elements are supported by a lens barrel.
  • a reduction system with a projection magnification j8 of, for example, 1Z4, 1/5, or 1Z8 can be used.
  • the projection optical system PL is composed of, for example, a refraction projection optical system that does not include a reflective element at a 1Z8 reduction magnification.
  • the projection optical system PL may be either a unity magnification system or an enlargement system.
  • projection optical system PL may be a reflection system that does not include a refractive element, or may be a catadioptric system that includes a refractive element and a reflective element.
  • the optical element 2 at the distal end of the projection optical system PL of the present embodiment is provided so as to be detachable (replaceable) from the lens barrel PK. Further, the optical element 2 at the tip is exposed from the lens barrel PK, and the liquid LQ in the liquid immersion area AR2 comes into contact with the optical element 2. This prevents corrosion of the lens barrel PK, which also has metallic strength.
  • the optical element 2 is formed of fluorite. Since pure water used as the liquid LQ in the present embodiment has a high affinity for fluorite, the liquid LQ can be brought into close contact with almost the entire liquid contact surface 2A of the optical element 2. That is, in the present embodiment, the affinity for the liquid contact surface 2A of the optical element 2 is high, and the liquid (water) LQ is supplied, so that the liquid contact surface 2A of the optical element 2 and the liquid LQ Adhesion can be increased.
  • the optical element 2 has a high affinity for the liquid LQ (water), and may be quartz. Further, the liquid contact surface 2A of the optical element 2 may be subjected to a hydrophilic (lyophilic) treatment to further enhance the affinity with the liquid LQ.
  • the substrate stage PST is capable of holding and moving the substrate P, and includes a Z stage 52 that holds the substrate P via a substrate holder PH, and an XY stage 53 that supports the Z stage 52. .
  • the XY stage 53 is supported on a base 54.
  • the substrate stage PST is driven by a substrate stage driving device PSTD such as a linear motor.
  • the substrate stage drive PSTD is controlled by the controller CONT.
  • the Z stage 52 is movable in the Z axis direction and in the 0X and 0Y directions.
  • the XY stage 53 is movable in the XY direction and the ⁇ Z direction. It goes without saying that the Z stage and the XY stage may be provided integrally.
  • a movable mirror 55 is provided on the substrate stage PST (Z stage 52).
  • a laser interferometer 56 is provided at a predetermined position. The position of the substrate P on the substrate stage PST in the two-dimensional direction (XY direction) and the rotation angle ( ⁇ Z) are measured in real time by a laser interferometer 56 using a moving mirror 55, and the measurement results are transmitted to a control unit. Output to CONT.
  • the control device CONT drives the XY stage 53 via the substrate stage driving device PSTD based on the measurement result of the laser interferometer 56, and thereby the XY direction of the substrate P held by the substrate holder PH. (A position in a direction substantially parallel to the image plane of the projection optical system PL), and a position in the Z direction.
  • the exposure apparatus EX has a focus detection system 4.
  • the focus detection system 4 has a projection unit 4A and a light receiving unit 4B.
  • the focus detection system 4 projects the detection light La from the projection unit 4A to the surface of the substrate P (exposed surface) via the liquid LQ from an oblique direction, receives the reflected light at the light receiving unit 4B, and receives the reflected light at the light receiving unit 4B. Based on the reflected light of the detected light La, surface position information of the surface of the substrate P is detected.
  • the control device CONT controls the operation of the focus detection system 4 and, based on the light receiving result of the light receiving unit 4B, the position of the surface of the substrate P with respect to a predetermined reference plane (for example, the image plane of the projection optical system PL) in the Z-axis direction. (Focus position). Further, the focus detection system 4 can also obtain the attitude of the substrate P in the tilt direction (0X, ⁇ Y) by obtaining each focus position at each of a plurality of points on the surface of the substrate P.
  • a predetermined reference plane for example, the image plane of the projection optical system PL
  • the control device CONT is held by the substrate holder PH by driving the Z stage 52 via the substrate stage driving device PSTD based on the detection result of the focus detection system 4. Controls the position of the substrate P in the z-axis direction (focus position) and the positions in the ⁇ X and ⁇ Y directions. That is, the control device CONT adjusts the positional relationship between the image plane by the projection optical system PL and the substrate P surface based on the surface position information of the substrate P surface detected using the focus detection system 4.
  • control device CONT based on the surface position information of the surface of the substrate P detected using the focus detection system 4, and the image plane formed via the projection optical system PL and the liquid LQ and the substrate P
  • the Z stage 52 is driven so as to match the surface (exposure surface), or the imaging characteristic adjusting device provided in the projection optical system PL disclosed in, for example, JP-A-60-78454. Drive to adjust the imaging characteristics (image plane position) of the projection optical system.
  • a concave portion 50 is provided on Z stage 52, and substrate holder PH is arranged in concave portion 50.
  • the upper surface 51 of the Z stage 52 other than the concave portion 50 has a flat surface (flat portion) which is almost the same height (level) as the surface of the substrate P held by the substrate holder PH. That is, the substrate stage PST has a configuration in which a flat surface 51 substantially flush with the surface of the substrate P is provided around the substrate P held by the substrate holder PH.
  • the liquid LQ hardly flows into the gap due to the surface tension of the liquid LQ.
  • the liquid LQ can be held under the projection optical system PL by the upper surface 51.
  • the upper surface of the movable mirror 55 and the upper surface 51 of the Z stage 52 are also flush. Note that there may be a step between the surface of the substrate P and the upper surface 51 of the substrate stage PST as long as the liquid LQ can be held below the projection optical system.
  • the liquid supply mechanism 10 supplies the liquid LQ onto the substrate P.
  • the liquid supply mechanism 10 is capable of sending out the liquid LQ, the first liquid supply unit 11 and the second liquid supply unit 12, and the first liquid supply unit 11
  • a first supply member 13 having a supply port for supplying the liquid LQ sent from the first liquid supply section 11 onto the substrate P
  • a second liquid supply A second supply member 14 connected to the unit 12 via a supply pipe 12A having a flow path and having a supply port for supplying the liquid LQ sent from the second liquid supply unit 12 onto the substrate P.
  • the first and second supply members 13 and 14 are arranged close to the surface of the substrate P, and are provided at different positions in the plane direction of the substrate P (within the XY plane).
  • the liquid feeder The first supply member 13 of the structure 10 is provided on one side (one X side) with respect to the projection area AR1, and the second supply member 14 is provided on the other side (+ X side).
  • Each of the first and second liquid supply units 11, 12 includes a tank for accommodating the liquid LQ, a foreign matter removal filter, a pressurizing pump, and the like, and includes supply pipes 11A, 12A and supply members 13, 12, The liquid LQ is supplied onto the substrate P via each of the fourteen. Further, the liquid supply operation of the first and second liquid supply units 11 and 12 is controlled by the control device CONT, and the control device CONT controls the first and second liquid supply units 11 and 12 on the substrate P per unit time. The liquid supply can be independently controlled. In addition, each of the first and second liquid supply units 11 and 12 has a liquid temperature adjustment mechanism, and supplies a liquid LQ having substantially the same temperature (for example, 23 ° C.) as the temperature in the chamber in which the device is housed.
  • first and second liquid supply units 11 and 12 of the exposure apparatus EX it is supplied on the substrate P. It is not necessary for the first and second liquid supply units 11 and 12 of the exposure apparatus EX to have all of the tank, foreign matter removing filter, pressure pump, temperature adjustment mechanism, and the like. May be replaced by equipment such as a factory where the is installed!
  • the liquid recovery mechanism 30 recovers the liquid LQ on the substrate P, and includes first and second recovery members 31 and 32 having a recovery port arranged close to the surface of the substrate P, First and second liquid recovery sections 33 and 34 are connected to first and second recovery members 31 and 32 via recovery pipes 33A and 34A having flow paths, respectively.
  • the first and second liquid recovery sections 33 and 34 include, for example, a suction device such as a vacuum pump and a tank for storing the recovered liquid LQ, and collect the liquid LQ on the substrate P into first and second recovery members. Recover through 31, 32 and recovery tubes 33A, 34A.
  • the liquid recovery operation of the first and second liquid recovery units 33 and 34 is controlled by a control device CONT.
  • the control device CONT can control the amount of liquid recovered per unit time by the first and second liquid recovery units 33 and 34. is there. It is not necessary for the first and second liquid recovery sections 33 and 34 of the exposure apparatus EX to have all of the suction devices and tanks. Equipment may be used instead.
  • FIG. 3 is a plan view showing a schematic configuration of the liquid supply mechanism 10 and the liquid recovery mechanism 30.
  • the liquid immersion area AR2 of the liquid LQ is formed on a part of the substrate P so as to include the substantially square projection area AR1.
  • the first supply member 13 of the liquid supply mechanism 10 for forming the liquid immersion area AR2 is provided on one side (one X side) with respect to the projection area AR1, and the second supply member 14 is provided on the other side. (+ X side).
  • Each of the first and second supply members 13 and 14 is formed in a linear shape in a plan view having the Y-axis direction as a long direction, and its supply port is provided so as to face the surface of the substrate P. Is formed in a slit shape having a longitudinal direction.
  • the liquid supply mechanism 10 simultaneously supplies the liquid LQ from the supply ports of the first and second supply members 13 and 14 on both sides of the projection area AR1.
  • Each of the first and second recovery members 31 and 32 of the liquid recovery mechanism 30 has a recovery port continuously formed in an arc shape facing the surface of the substrate P.
  • the first and second recovery members 31 and 32 arranged to face each other form a substantially annular recovery port.
  • the recovery ports of the first and second recovery members 31 and 32 are arranged so as to surround the first and second supply members 13 and 14 of the liquid supply mechanism 10 and the projection area AR1. Further, a plurality of partition members 35 are provided inside the collection port continuously formed so as to surround the projection area AR1.
  • the liquid LQ supplied to the substrate P is also supplied from the first and second supply members 13, 14 to the lower end surface (2A) of the front end (optical element 2) of the projection optical system PL and the substrate P. Supplied so that it spreads between and. Further, the liquid LQ that has flowed out of the first and second supply members 13 and 14 with respect to the projection area AR1 is located outside (farther from) the projection area AR1 than the first and second supply members 13 and 14.
  • the first and second collection members 31 and 32 disposed in the first and second collection members are collected from the collection ports.
  • the arrangement of the liquid supply mechanism 10 and the arrangement of the liquid recovery mechanism 30 are not limited to those described above. If the liquid LQ can be locally held on the image plane side of the projection optical system PL, Various forms can be adopted.
  • the exposure apparatus EX in the present embodiment is a step-and-repeat type projection exposure apparatus (so-called stepper) as described above.
  • stepper a step-and-repeat type projection exposure apparatus (so-called stepper) as described above.
  • stepper a step-and-repeat type projection exposure apparatus
  • the size of the projection area A R1 of the projection optical system PL corresponds to the size of each of the shot areas S1 to S32.
  • the projection area AR1 of the projection optical system PL is aligned with one of the plurality of shot areas S1 to S32 on the substrate P, and the pattern of the mask M is kept in a state where the substrate P is stationary.
  • the projection images are collectively projected onto the shot area.
  • the exposure processing for each of the shot areas S1 to S32 is sequentially performed by the step-and-repeat method.
  • the controller CONT supplies the liquid LQ onto the substrate P using the liquid supply mechanism 10
  • the liquid LQ on the substrate P is recovered by using the liquid recovery mechanism 30, and the liquid immersion area AR2 of the liquid LQ is formed on the substrate P.
  • the control device CONT controls the immersion area AR2 of the liquid LQ on the substrate! ⁇ (Between the substrate P and the liquid contact surface 2A of the projection optical system PL). To form Then, before exposing the first shot area S1 on the substrate P, surface position information of the surface of the first shot area S1 of the substrate P is detected using the focus detection system 4 via the liquid LQ. That is, the control device CONT emits the detection light La from the projection unit 4A of the focus detection system 4, and outputs the substrate P corresponding to the first shot region S1 via the liquid LQ of the liquid immersion region AR2 formed on the substrate P.
  • the detection light La is projected on the surface, and the reflected light is received by the light receiving section 4B.
  • the light receiving section 4B receives the reflected light via the liquid LQ in the liquid immersion area AR2.
  • the control device CONT obtains surface position information of the surface of the first shot area S1 of the substrate P based on the result of light reception by the light receiving section 4B.
  • the movement of the substrate P in the XY direction may be stopped. You can go while moving in the XY direction!
  • control device CONT forms the image via the projection optical system PL and the liquid LQ based on the surface position information of the surface of the first shot area S1 of the substrate P detected using the focus detection system 4.
  • the Z stage 52 is driven so that the position of the substrate P (Z position) is adjusted so that the image plane to be formed matches the surface of the first shot area S1.
  • the controller CONT starts irradiating the first shot area S1 on the substrate P with the exposure light EL, and passes the mask M onto the first shot area S1 on the substrate P. Project a turn image.
  • the exposure process is performed by the step 'and' repeat method as described above, when exposing the first shot area S1 on the substrate P, the substrate P is exposed in a stationary state. .
  • the focus detection system 4 detects the surface position information on the surface of the substrate P, and the projection optical system PL performs the operation based on the detected surface position information.
  • the operation of adjusting the positional relationship between the image plane and the surface of the substrate P (specifically, driving of the Z stage 52) is stopped.
  • the exposure processing is performed by the step-and-repeat method, and since the substrate P is stationary during the exposure, the image plane and the image plane are exposed before the first shot area S1 is exposed.
  • the positional relationship between the substrate P and the surface of the substrate P is adjusted in advance, and the exposure is performed while maintaining the adjusted positional relationship, so that the image plane by the projection optical system PL and the surface of the substrate P are aligned with each other.
  • One shot area S1 can be exposed.
  • the operation of detecting the surface position information using the focus detection system 4 and the positional relationship between the image plane and the surface of the substrate P by the projection optical system PL are performed.
  • the surface position information of the substrate P can be detected and detected using the detection light La without being affected by the temperature change or temperature distribution of the liquid LQ due to the exposure light EL irradiation. It is possible to accurately adjust the positional relationship between the surface of the substrate P and the image plane based on the obtained surface position information. Therefore, the substrate P can be exposed in a state where the surface of the substrate P and the image plane via the liquid LQ of the projection optical system PL are accurately aligned, and a pattern is formed on the substrate P with high accuracy. be able to.
  • the control device CONT controls the third shot area to expose a shot area that is not adjacent to the first shot area S1, for example, the third shot area S3.
  • the step S3 is moved under the projection optical system PL to form a liquid immersion area AR2 of the liquid LQ on the third shot area S3 of the substrate P.
  • the surface position of the surface of the third shot area S3 of the substrate P is used. Detect information via liquid LQ.
  • the control device CONT calculates the position between the image plane by the projection optical system PL and the substrate P surface corresponding to the third shot area S3. Reconcile relationships. Then, after completing the positional adjustment, the substrate P The irradiation of the third shot area S3 with the exposure light EL is started. When the third shot area S3 is exposed, similarly to the case where the first shot area S1 is exposed, the detection operation of the surface position information using the focus detection system 4 and the position based on the detected surface position information are performed. The relationship adjustment operation is stopped.
  • FIG. 4 shows the exposure order codes (1), (2), (3),..., (32).
  • the first shot area S1 is exposed first ( (See reference numeral (1))
  • the third shot area S3 is exposed second (see reference numeral (2))
  • the 16th shot area S16 is exposed third (see reference numeral (3)), and so on up to the 32nd.
  • An adjacent shot area is not continuously exposed.
  • the shot areas on the substrate P to be exposed are The shot area can be exposed in a state where there is almost no temperature change or temperature distribution of the liquid LQ.
  • the exposure light EL is irradiated to expose the first shot area S1 on the substrate P
  • the first shot area S1 on the substrate P is heated, and the heat causes the first shot area S1 to be exposed.
  • Temperature change or temperature distribution may occur in the liquid LQ on or near S1.
  • the first shot area S1 is adjacent to the first shot area S1.
  • the liquid LQ on the second shot area S2 may also have a temperature change and a temperature distribution due to the exposure of the first shot area S1. There is. In other words, the heat of the first shot area S1 or the heated liquid LQ on the first shot area S1 may cause a temperature change or temperature distribution of the liquid LQ on the second shot area S2. .
  • the second shot area S2 will be exposed due to the temperature change of the liquid LQ on the second shot area S2.
  • the image forming characteristics of the projection optical system PL via the liquid LQ when exposing the area S2 fluctuate, and the pattern cannot be accurately formed on the substrate P. May occur. Therefore, as shown in FIG. 6, when the exposure order of the plurality of shot areas on the substrate P is determined so that adjacent shot areas are continuously exposed, the above-described inconvenience occurs. The likelihood increases.
  • the liquid LQ on the second shot area S2 may have changed in temperature due to the exposure of the first shot area S1, as shown in FIG.
  • exposing the shot area S1 by exposing a shot area (for example, S3) at a position distant from the first shot area S1, the shot areas S3, S16, etc., at positions distant from the first shot area S1 are exposed.
  • the first shot area S1 of the substrate P is stabilized at a desired temperature, and the temperature of the liquid LQ near the first shot area S1 can be stabilized.
  • the shot area to be exposed next to the first shot area S1 is a shot area (for example, S3) located at a position apart from the first shot area S1 (not adjacent to the first shot area S1).
  • the shot region S3 can be exposed in a state where the liquid LQ on the shot region S3 to be exposed has almost no temperature change or temperature distribution.
  • the temperature change or the temperature of the liquid LQ on the shot area to be exposed is increased.
  • the shot area can be exposed with almost no distribution. Therefore, a pattern can be accurately formed on the substrate P.
  • a shot area to be exposed next is determined to be a shot area that is not affected by the heat of the substrate P (first shot area S1) due to the irradiation of the exposure light EL.
  • the shot area can be more appropriately exposed in a state where there is almost no temperature change or temperature distribution of the liquid LQ on the shot area to be exposed.
  • the first shot area S1 irradiated with the exposure light EL is heated, a temperature change or a temperature distribution occurs in the liquid LQ on or near the first shot area S1.
  • the exposure order is set such that the shot area is exposed via the liquid LQ at a remote position which is not affected by the heat of the first shot area S1 of the substrate P. Let's decide! / ,. In this way, by determining the exposure order when exposing the plurality of shot areas S1 to S32 so as not to be affected by the heat of the substrate P due to the irradiation of the exposure light EL, the shot area to be exposed is determined.
  • the liquid LQ has almost no temperature change or temperature distribution, The cut area can be exposed.
  • the direction of the stepping movement of the substrate P can be appropriately determined as shown in FIG.
  • the substrate P is moved in the X-axis direction with respect to the projection area AR1 so that the projection area AR1 jumps over the second shot area S2.
  • the projection area A Rl may be moved to the second position, such as when exposing the 29th shot area S29 after the 18th shot area S18.
  • the substrate P may be moved in the Y-axis direction (row direction) with respect to the projection area ARl by jumping over the 27-shot area S27, or the 23rd shot area S23 may be moved after the twelfth shot area S12. As in the case of exposure, the substrate P may be moved obliquely with respect to the projection area AR1.
  • the control device CONT controls all the shot regions S1 to S32 (or some (Shot area)
  • the surface position information for each is detected using the focus detection system 4, and the detected surface position information is stored.
  • the exposure may be performed by adjusting the positional relationship between the image plane by the projection optical system PL and the surface of the substrate P.
  • the detection operation by the focus detection system 4 also performs the detection operation by the image plane of the projection optical system PL and the surface of the shot area S1.
  • the focus operation is continued by the focus detection system 4, and only the adjustment of the positional relationship between the image plane of the projection optical system PL and the surface of the shot area S1 based on the detection result is performed. You may try to stop.
  • the focus detection system 4 is configured to detect the surface position of the substrate P via the liquid LQ without passing through the projection optical system PL.
  • the surface position of the substrate P can be detected via some or all of the optical elements and the liquid LQ. Further, the detection may be performed via the mask M.
  • the detection operation of the focus detection system 4 is stopped.
  • a non-optical detection system for example, a capacitance sensor, a micrometer, an ultrasonic sensor, etc.
  • the distance between the projection optical system PL and the substrate P may be measured by using a non-optical detection system that is not (and hardly affected) by the heat of the liquid LQ.
  • the detection result of the non-optical detection system may be simply stored as focus information of the shot area during the exposure, or the distance between the projection optical system PL and the substrate P may be adjusted based on the result.
  • the liquid supply operation by the liquid supply mechanism 10 is also performed during the detection operation of the focus detection system 4 before exposure of the shot area (eg, the shot area S1) on the substrate P.
  • the liquid recovery operation by the liquid recovery mechanism 30 is continued, but the liquid supply operation by the liquid supply mechanism 10 and the liquid recovery operation by the liquid recovery mechanism 30 are stopped with the liquid immersion area AR2 formed.
  • the liquid supply operation by the liquid supply mechanism 10 and the liquid recovery operation by the liquid recovery mechanism 30 are continued during the exposure of the shot area (for example, the shot area S1) on the substrate P.
  • the liquid supply operation by the liquid supply mechanism 10 and the liquid recovery operation by the liquid recovery mechanism 30 are stopped, and after the exposure of one shot area is completed, the next shot area
  • the liquid supply operation by the liquid supply mechanism 10 and the liquid recovery operation by the liquid recovery mechanism 30 may be executed when the substrate P is step-moved for the first exposure.
  • the exposure order of a plurality of shot areas is determined so that adjacent shot areas on the substrate P are not continuously exposed. If the influence is small, the adjacent shot area may be exposed. However, also in this case, the exposure of each shot area is started after the operation of detecting the surface position of the substrate P by the focus detection system 4 is completed.
  • the exposure apparatus EX the pattern formed on the mask M is synchronized with the mask M and the substrate P in directions different from each other (reverse direction) in the scanning direction (predetermined direction).
  • a step-and-scan type scanning exposure apparatus (so-called scanning stepper) will be described as an example.
  • the synchronous movement direction (scanning direction, predetermined direction) between the mask M and the substrate P in the horizontal plane is the X-axis direction
  • the direction perpendicular to the X-axis direction is the Y-axis in the horizontal plane.
  • Direction (non-scanning direction) a direction perpendicular to the X-axis and Y-axis directions and coincident with the optical axis AX of the projection optical system PL is defined as a Z-axis direction.
  • the projection area AR1 of the projection optical system PL is set in a slit shape (rectangular shape) whose longitudinal direction is in the Y-axis direction (non-scanning direction).
  • the liquid immersion area AR2 filled with the liquid LQ is formed on a part of the substrate P so as to include the projection area AR1.
  • the first supply member 13 of the liquid supply mechanism 10 for forming the liquid immersion area AR2 is provided on one side (1 X side) in the scanning direction with respect to the projection area AR1, and the second supply member 14 is provided on the other side (+ X side).
  • a pattern image of a part of the mask M corresponding to the illumination area is projected onto a slit-shaped (rectangular) projection area A R1 immediately below the tip of the projection optical system PL.
  • the substrate P moves in the + X direction (or ⁇ X direction) via the XY stage 53. ⁇ ( ⁇ is the projection magnification).
  • a plurality of shot areas S 1 to S 45 are set on the substrate ⁇ .
  • the next shot area S is moved by the stepping movement of the substrate P.
  • the area moves to the scanning start position, and thereafter, scanning exposure processing is sequentially performed on each shot area while moving the substrate P by the step-and-scan method.
  • a plurality of shot areas on the substrate P are exposed so that adjacent shot areas among the plurality of shot areas S1 to S45 on the substrate P are not continuously exposed. The exposure order has been determined.
  • FIG. 8 shows the exposure sequence (1 ;) To (8).
  • the focus detection system 4 can detect the surface position information of all the shot areas S1 to S45 via the liquid LQ.
  • the projection area AR1 when exposing the second shot area S2 after the fifth shot area S5, the projection area AR1 is projected so as to jump over the fourth and third shot areas S4 and S3.
  • the projection area AR1 when the substrate P moves in the X-axis direction with respect to the area AR1, and the ninth shot area S9 is exposed next to the twelfth shot area S12, the projection area AR1 is shifted to the eleventh and tenth shot areas Sl1.
  • the substrate P moves in the X-axis direction with respect to the projection area AR1 so as to jump over S10. That is, in the present embodiment, when continuously exposing a plurality of shot areas selected from a plurality of shot areas arranged in the X-axis direction, the projection area AR1 jumps over two shot areas. As described above, the substrate P moves in the X-axis direction with respect to the projection area AR1.
  • the scanning direction (moving direction) of the substrate P is set to the same direction. ing. That is, when scanning exposure is performed on two shot areas S2 and S5, which are force-selected out of a plurality of shot areas S1 to S5 arranged in the X-axis direction, the substrate P (shot area) is projected with respect to the projection area AR1. Moves in the + X direction (see arrow yl), and scans and exposes three shot areas S12, S9, and S6 in which the force is selected from shot areas S12 to S6.
  • Area moves in the X direction (see arrow y2), and scans and exposes three shot areas S20, S23, and S26 selected from among the shot areas S20 to S26.
  • P shot area moves in the + X direction (see arrow y3).
  • the direction of the arrow in FIG. 8 indicates that the substrate P is stationary, and indicates the moving direction of the projection area AR1 with respect to the substrate P in the stationary state.
  • the mask M is moved in the ⁇ X direction (or + X direction) in synchronization with the projection optical system PL. Then, the substrate P moves in the + X direction (or the ⁇ X direction).
  • the illumination area IA of the exposure light EL on the mask M is set in a slit shape extending in the Y-axis direction in the pattern formation area PA on the mask M, and both ends in the Y-axis direction are provided. Is located on the shading band SB. And The partial pattern included in the illumination area IA on the mask M is projected onto the projection area AR1 of the projection optical system PL.
  • the mask M when the position where the + X side end of the shot area of the substrate P is aligned with the projection area AR1 is the scan start position for the shot area (substrate P), the mask M The position where the —X side end of the mask M and the illumination area IA of the exposure light EL are aligned is the scanning start position for the mask M. Therefore, for example, when the moving direction of the substrate P when exposing the fifth shot area S5 and the second shot area S2 is the same direction yl, the scanning end position force of the fifth shot area S5 While the substrate P moves to the scanning start position in the area S2, the mask M at the scanning end position needs to return to the scanning start position.
  • the substrate P moves by two shot areas to move to the scanning start position for the second shot area. . Therefore, during the movement of the substrate P, the mask M can be returned from the scan end position to the scan start position.
  • the liquid LQ in the present embodiment is pure water.
  • Pure water has the advantage that it can be easily obtained in large quantities at a semiconductor manufacturing plant or the like, and that it has no adverse effect on the photoresist on the substrate P, the optical element (lens), and the like.
  • pure water has no adverse effect on the environment and has an extremely low impurity content. Therefore, it is expected that the surface of the substrate P and the surface of the optical element provided on the front end face of the projection optical system PL will be cleaned. it can.
  • the exposure apparatus may have an ultrapure water producing device.
  • the refractive index n of pure water (water) with respect to the exposure light EL having a wavelength of about 193 nm is said to be approximately 1.44, and an ArF excimer laser beam (wavelength of 193 nm) is used as the light source of the exposure light EL.
  • the wavelength is shortened to lZn, that is, about 134 nm on the substrate P, and a high resolution is obtained.
  • the depth of focus is expanded to about n times, that is, about 1.44 times as compared with that in the air, if it is sufficient to secure the same depth of focus as when using it in the air,
  • the numerical aperture of the projection optical system PL can be increased, and the resolution is improved in this respect as well.
  • the numerical aperture NA of the projection optical system may be 0.9 to 1.3.
  • the numerical aperture NA of the projection optical system is increased as described above, the imaging performance may be deteriorated due to the polarization effect with the random polarized light which has been conventionally used as the power exposure light. It is desirable to use.
  • linearly polarized illumination is performed according to the longitudinal direction of the line pattern of the 'and' space pattern of the mask (reticle), and the S-polarized component (TE-polarized component), ie, the line It is preferable that a large amount of diffracted light of the polarization direction component along the longitudinal direction of the pattern is emitted.
  • the space between the projection optical system PL and the resist applied to the surface of the substrate P is filled with liquid
  • the space between the projection optical system PL and the resist applied to the surface of the substrate P is filled with air (gas).
  • the transmittance of the diffracted light of the S-polarized light component (TE-polarized light component), which contributes to the improvement of contrast, on the resist surface is higher than that of the case where the numerical aperture NA of the projection optical system exceeds 1.0. Even in such a case, high imaging performance can be obtained. Further, it is more effective to appropriately combine a phase shift mask, such as an oblique incidence illumination method (particularly, a dipole illumination method) such as that disclosed in JP-A-6-188169, which is adapted to the longitudinal direction of a line pattern.
  • a fine line-and-space pattern (for example, a line-and-space of about 25 to 50 nm) is formed by using an ArF excimer laser as exposure light and using a projection optical system PL with a reduction ratio of about 1Z4.
  • the mask M acts as a polarizing plate due to the wave guide effect, and reduces the contrast.
  • the above-mentioned linearly polarized light illumination is desirable, but random polarized light is preferable because the amount of diffracted light of the S polarized light component (TE polarized light component) is larger than that of the diffracted light of the component (TM polarized light component).
  • TE polarized light component the amount of diffracted light of the S polarized light component
  • TM polarized light component the amount of diffracted light of the S polarized light component
  • an ArF excimer laser is used as the exposure light, and a projection optical system PL with a reduction ratio of about 1Z4 is used.
  • the diffracted light of the S-polarized component (TE polarized component) is more than the diffracted light of the P-polarized component (TM polarized component), and the mask M is projected. Therefore, even when the numerical aperture NA of the projection optical system PL is as large as 0.9 to 1.3, high V ⁇ resolution performance can be obtained.
  • the optical axis is centered. It is also effective to combine the polarized illumination method and the oblique incidence illumination method, which linearly polarizes in the tangential (circumferential) direction of the circle.
  • S-polarized illumination linearly polarized illumination
  • oblique incidence illumination method which linearly polarizes in the tangential (circumferential) direction of the circle.
  • the optical element 2 is attached to the tip of the projection optical system PL, and the lens is used to adjust the optical characteristics of the projection optical system PL, for example, aberrations (spherical aberration, coma, etc.). be able to.
  • the optical element attached to the tip of the projection optical system PL may be an optical plate used for adjusting the optical characteristics of the projection optical system PL.
  • a parallel plane plate that can transmit the exposure light EL may be used.
  • the exposure apparatus to which the above-described liquid immersion method is applied has a configuration in which the substrate P is exposed by filling the optical path space on the emission side of the terminal optical element 2 of the projection optical system PL with liquid (pure water).
  • liquid pure water
  • the optical path space on the entrance side of the terminal optical element 2 of the projection optical system PL may be filled with liquid (pure water).
  • the space between the projection optical system PL and the surface of the substrate P is filled with the liquid LQ V.
  • a cover glass having a plane-parallel plate force on the surface of the substrate P may be used.
  • a configuration in which the liquid LQ is filled in the mounted state may be employed.
  • the liquid LQ of the present embodiment may be a liquid other than water, which is water, for example.
  • the light source of the exposure light EL is an F laser, this F laser light does not pass through water,
  • liquid LQ for example, perfluoropolyether (PFPE) or
  • the part in contact with the liquid LQ has a small polarity, for example, containing fluorine! ⁇ ⁇ Lyophilization treatment is performed by forming a thin film using a substance with a molecular structure.
  • other liquid LQs that are transparent to the exposure optical system EL and have a refractive index as high as possible and are stable to the photo resist coated on the surface of the substrate P (for example, Cedar) Oil) can also be used.
  • the surface treatment is performed according to the polarity of the liquid LQ used.
  • the substrate P in each of the above embodiments not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic eno for a thin film magnetic head, or an exposure apparatus is used.
  • An original mask or reticle synthetic quartz, silicon wafer is applied.
  • the present invention is also applicable to a twin-stage type exposure apparatus disclosed in JP-A-10-163099, JP-A-10-214783, JP-T-2000-505958, and the like.
  • a substrate stage for holding a substrate, a reference member on which a reference mark is formed, and a measurement stage on which various sensors are mounted can also be applied to an exposure apparatus provided.
  • an exposure apparatus that locally fills the liquid between the projection optical system PL and the substrate P is adopted!
  • the entire surface of the substrate to be exposed is liquid.
  • the present invention is also applicable to an immersion exposure apparatus covered with.
  • the structure and exposure operation of an immersion exposure apparatus in which the entire surface of a substrate to be exposed is covered with liquid are described in, for example, JP-A-6-124873, JP-A-10-303114, and US Pat. No. 5,825,043. It is described in detail in
  • the type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element for exposing a semiconductor element pattern onto a substrate P, but may be an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin-film magnetic head, Manufacture of imaging device (CCD) or reticle or mask It can be widely applied to an exposure apparatus for manufacturing.
  • a light-transmitting mask in which a predetermined light-shielding pattern (or a phase pattern ⁇ a dimming pattern) is formed on a light-transmitting substrate is used.
  • a predetermined light-shielding pattern or a phase pattern ⁇ a dimming pattern
  • an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used. .
  • the force of exposing the substrate by projecting the pattern image onto the substrate P by using the projection optical system PL can be applied to an exposure apparatus (lithography system) that exposes a line 'and' space on the substrate P.
  • the projection optical system PL need not be used.
  • a linear motor (USP5,623,853 or
  • each stage PST and MST may be of a type that moves along a guide or a guideless type that does not have a guide.
  • each stage PST, MST As a driving mechanism of each stage PST, MST, a magnet unit having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil are opposed to each other, and each stage PST, MST is driven by an electromagnetic force.
  • a flat motor may be used.
  • one of the magnet unit and the armature unit may be connected to the stages PST and MST, and the other of the magnet unit and the armature unit may be provided on the moving surface side of the stages PST and MST. !,.
  • the exposure apparatus EX As described above, the exposure apparatus EX according to the embodiment of the present application is described in the claims of the present application. It is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical For, adjustments are made to achieve electrical accuracy.
  • Various subsystems The process of assembling into the exposure apparatus includes mechanical connection, electrical circuit wiring connection, and pneumatic circuit piping connection between the various subsystems. Needless to say, there is an assembling process for each subsystem before the assembling process into the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable to manufacture the exposure apparatus in a clean room in which the temperature, cleanliness, etc. are controlled.
  • a micro device such as a semiconductor device has a step 201 for designing a function of a micro device and a performance design, a step 202 for producing a mask (reticle) based on this design step, Step 203 of manufacturing a substrate as a material, wafer processing step 204 of exposing a mask pattern to the substrate using the exposure apparatus EX of the above-described embodiment, and device assembly step (including dicing step, bonding step, and package step) 205 It is manufactured through an inspection step 206 and the like.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Il est prévu un procédé d'exposition et un système d'exposition susceptibles de former un motif précis sur un substrat même si l’on applique un procédé d'immersion. Si une pluralité de régions de clichés (S1-S32) d’un substrat P sont exposées de manière séquentielle en irradiant le substrat (P) avec une lumière d’exposition (EL) à travers un système optique de projection (PL) et un liquide (LQ), l’ordre d’exposition de la pluralité de régions de clichés sur le substrat (P) est déterminé pour que des régions de clichés adjacentes dans la pluralité de régions de clichés sur le substrat (P) ne soient pas exposées en continu.
PCT/JP2005/007696 2004-04-27 2005-04-22 Procede d’exposition, systeme d’exposition, et procede de fabrication de dispositif WO2005106930A1 (fr)

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EP1850371A1 (fr) * 2005-01-31 2007-10-31 Nikon Corporation Procede d'exposition, appareil d'exposition et procede pour fabriquer le dispositif
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JP2011029644A (ja) * 2009-07-27 2011-02-10 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
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EP1524555A1 (fr) * 2003-10-16 2005-04-20 ASML Netherlands B.V. Appareil lithographique et méthode de fabrication d'un dispositif

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JP2006114765A (ja) * 2004-10-15 2006-04-27 Toshiba Corp 露光方法及び露光装置
JP4625673B2 (ja) * 2004-10-15 2011-02-02 株式会社東芝 露光方法及び露光装置
EP1850371A1 (fr) * 2005-01-31 2007-10-31 Nikon Corporation Procede d'exposition, appareil d'exposition et procede pour fabriquer le dispositif
EP1850371A4 (fr) * 2005-01-31 2011-01-19 Nikon Corp Procede d'exposition, appareil d'exposition et procede pour fabriquer le dispositif
EP1903398A1 (fr) 2006-09-20 2008-03-26 ASML Netherlands B.V. Appareil lithographique et procédé de fabrication d'un dispositif
US8330936B2 (en) 2006-09-20 2012-12-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2011029644A (ja) * 2009-07-27 2011-02-10 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
CN103176370A (zh) * 2013-03-13 2013-06-26 华中科技大学 一种用于浸没式光刻的浸液温控系统
CN103176370B (zh) * 2013-03-13 2015-04-15 华中科技大学 一种用于浸没式光刻的浸液温控系统

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