WO2005095296A3 - Procede de preparation d’un film dope aux terres rares - Google Patents

Procede de preparation d’un film dope aux terres rares Download PDF

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Publication number
WO2005095296A3
WO2005095296A3 PCT/FR2005/000787 FR2005000787W WO2005095296A3 WO 2005095296 A3 WO2005095296 A3 WO 2005095296A3 FR 2005000787 W FR2005000787 W FR 2005000787W WO 2005095296 A3 WO2005095296 A3 WO 2005095296A3
Authority
WO
WIPO (PCT)
Prior art keywords
rare
earth
preparing
doped film
relates
Prior art date
Application number
PCT/FR2005/000787
Other languages
English (en)
Other versions
WO2005095296A2 (fr
Inventor
Fabrice Gourbilleau
Richard Rizk
Original Assignee
Centre Nat Rech Scient
Ecole Nationale Superieure D I
Fabrice Gourbilleau
Richard Rizk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Ecole Nationale Superieure D I, Fabrice Gourbilleau, Richard Rizk filed Critical Centre Nat Rech Scient
Publication of WO2005095296A2 publication Critical patent/WO2005095296A2/fr
Publication of WO2005095296A3 publication Critical patent/WO2005095296A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Lasers (AREA)

Abstract

La présente invention se rapporte à des techniques pour la fabrication de couches diélectriques dopées aux nanoparticules de Si et aux terres rares (erbium), en particulier pour des applications en communication optique et en optoélectronique. La présente invention se rapporte plus particulièrement à un procédé de préparation d'un film dopé aux terres rares caractérisé en ce que l'on procède à au moins une étape de dépôt d'une matrice isolante, d'au moins une terre rare et de nanograins de silicium sur un substrat par pulvérisation magnétron.
PCT/FR2005/000787 2004-03-31 2005-03-31 Procede de preparation d’un film dope aux terres rares WO2005095296A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55788104P 2004-03-31 2004-03-31
US60/557,881 2004-03-31

Publications (2)

Publication Number Publication Date
WO2005095296A2 WO2005095296A2 (fr) 2005-10-13
WO2005095296A3 true WO2005095296A3 (fr) 2006-01-26

Family

ID=34968890

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2005/000787 WO2005095296A2 (fr) 2004-03-31 2005-03-31 Procede de preparation d’un film dope aux terres rares

Country Status (1)

Country Link
WO (1) WO2005095296A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010020046A1 (fr) * 2008-08-20 2010-02-25 Mcmaster University Couches diélectriques dopées et procédé de formation de celles-ci
TWI742100B (zh) 2016-07-06 2021-10-11 瑞士商西克帕控股有限公司 用於鑑別利用長餘輝發光之保全標記的方法，及包括一或更多種餘輝化合物的保全標記

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
10TH SEOUL INTERNATIONAL SYMPOSIUM ON THE PHYSICS OF SEMICONDUCTORS AND APPLICATIONS - 2000 1-3 NOV. 2000 CHEJU, SOUTH KOREA, vol. 39, December 2001 (2001-12-01), Journal of the Korean Physical Society Korean Phys. Soc South Korea, pages S78 - S82, ISSN: 0374-4884 *
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; December 2001 (2001-12-01), SE-YOUNG SEO ET AL: "Rare earth doping of silicon-rich silicon oxide for silicon-based optoelectronic applications", XP002345911, Database accession no. 7180716 *
F. GOURBILLEAU ET AL: "Er emission from Er-doped Si-rich silicon oxide layers sythesised by hydrogen reactive magnetron co-sputtering", PHYSICA E, vol. 16, 2003 - 2003, pages 341 - 346, XP002345897 *
GOURBILLEAU F ET AL: "Emission of Er- and Si-doped silicate glass films obtained by magnetron co-sputtering", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 105, no. 1-3, 15 December 2003 (2003-12-15), pages 43 - 46, XP004476763, ISSN: 0921-5107 *
GOURBILLEAU F ET AL: "Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 94, no. 6, 15 September 2003 (2003-09-15), pages 3869 - 3874, XP012060190, ISSN: 0021-8979 *
S.Y.SEO ET AL., RARE-EARTH-DOPED MATERIALS AND DEVICES V, PROCEEDINGS OF SPIE, vol. 4282, 2001 - 2001, pages 174 - 184, XP002345898 *
SEO SE-YOUNG ET AL: "Erbium–thulium interaction in broadband infrared luminescent silicon-rich silicon oxide", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 82, no. 20, 19 May 2003 (2003-05-19), pages 3445 - 3447, XP012034121, ISSN: 0003-6951 *
SEO SE-YOUNG ET AL: "The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 83, no. 14, 6 October 2003 (2003-10-06), pages 2778 - 2780, XP012035286, ISSN: 0003-6951 *
SINGH P ET AL: "Microstructure and emission properties of Si nanograins and Er-doped silica films obtained by reactive magnetron co-sputtering", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 105, no. 1-3, 15 December 2003 (2003-12-15), pages 220 - 224, XP004476800, ISSN: 0921-5107 *
WATANABE KEI ET AL: "Excitation of Tm3+ by resonant energy transfer from Si nanocrystals", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 92, no. 7, 1 October 2002 (2002-10-01), pages 4001 - 4006, XP012057378, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
WO2005095296A2 (fr) 2005-10-13

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