WO2005093515A1 - Photosensitive composition, photosensitive film, and permanent pattern and process for forming the same - Google Patents

Abstract

The objects of the present invention are to provide photosensitive compositions and photosensitive films that may represent little surface tackiness, proper laminating ability, appropriate handling property, and superior shelf stability, and also may display superior chemical resistance, higher surface hardness, and sufficient thermal resistance after developing; in addition, to provide highly fine and precise permanent patterns such as protective layers, interlayer insulating films, and solder resist patterns and the like. These objects may be attained by the photosensitive composition that comprises (A) a copolymer, (B) a polymerizable compound, and (C) a photopolymerization initiator, wherein the copolymer (A) is synthesized from a precursor copolymer containing at least a monomer unit of maleic anhydride and a primary amine compound, by reacting one equivalent of anhydride group of the precursor copolymer with 0.1 to 1.2 equivalent of the primary amine compound; and the photosensitive film that utilizes the photosensitive composition.

Description

DESCRIPTION PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE FILM, AND PERMANENT PATTERN AND PROCESS FOR FORMING THE SAME

5 Technical Field The present invention relates to photosensitive compositions and photosensitive films, capable of forming images by means of UV irradiation, that may represent little surface tackiness, proper laminating ability, appropriate handling property, and superior shelf stability, and also may display superior o chemical resistance, higher surface hardness, and sufficient thermal resistance after developing; in addition, the present invention relates to highly fine and precise permanent patterns such as protective layers, interlayer insulating films, and solder resist patterns and the like as well as to processes for forming the permanent patterns.5 Background Art Various parts such as semiconductors, capacitors, and resistors are soldered on printed wiring boards in commercial electronics productions. Generally, permanent patterns corresponding to non-soldered portions are formed in a o protective film or an insulating film in order to prevent solder adhesion to non-soldered portions in soldering processes such as IR reflow. The permanent patterns of the protective film are typically of solder resists. Previously, thermosetting materials have been utilized for the solder resists, which are typically processed by silk screen printings. Recently, the silk screen 5 printings have been representing a limit in terms of resolution while wirings of printed wiring boards have been densified successively; and nowadays photo solder resists are widely employed of which the images are formed by photolithography. Specifically, photo solder resists capable of developing in alkaline solutions such as weak alkaline solution of sodium carbonate are mainly employed from view point of operating atmosphere and global environment. The solder resists are typically applied such that a liquid of solder resist is coated on one side of substrates, on which a wiring pattern is formed previously, by means of silk screen printing, spray coating, dip coating, or the like, and the coating of the liquid is dried, then the liquid 5 is coated on the other side of the substrates and dried. As for the photo solder resists capable of developing in alkaline solutions, such compositions are generally utilized that contain an epoxyacrylate compound having at least an ethylenically unsaturated double bond and at least an acid group for alkaline developing property and an additionally polymerizable compound of a o monomer having at least an ethylenically unsaturated double bond, as disclosed in Japanese Patent Application Laid-Open (JP-A) No. 61-243869. The solder resist disclosed in JP-A No. 61-243869 may exhibit higher surface hardness after post-baking and present superior chemical resistance; however, there exist a problem in handling property such that tackiness remains after post-baking, 5 thus defects tend to increase due to dust deposition and photomasks tend to be smeared. The reason that tackiness remains after post-baking is considered that the molecular mass of the epoxyacrylate in the binder soluble into aqueous alkaline solution is as low as about a few hundreds and the monomer is typically liquid or semi-solid having a higher boiling point. o Further, the exposure sensitivity of the solder resist is typically as low as 300 to 1000 mj/cm², which is one factor that lowers the higher limit of production line speed; therefore, the improvement of exposure sensitivity is demanded currently. When the amount of the monomer is increased, the exposure sensitivity may be effectively increased; however, the increased amount of monomer inevitably leads to 5 still higher tackiness. As such, promising solutions are not found yet. Although commercial mounting of solder resists is progressing rapidly, one of the most serious problems to achieve high density mounting is position shifts of wiring patterns or land patterns of through holes that are induced by expansion and contraction of substrates in a condition of photolithography process including repeated wettings or wet etchings, or that are induced by expansion and contraction of photomask films in a condition of various temperatures and humidities. In order to prevent the position shift, such means have been conventionally conducted as substrate lots with lower deformation level are selected, plural film 5 masks are prepared that are corrected preciously with various parameters, expensive glass masks are utilized, or the like. Additionally, in order to address the position shift, laser direct imaging systems (LDI) are widely employed. The LDI applies the technology in which exposure patterns are formed corresponding to substrate deformations by compensating based on rapid processing of digital data. o The solder resists utilized in the LDI are needed the exposure sensitivity of 100 mj/cm² or more so as to apply UV lasers of 365 nm or 405 nm. Therefore, solder resists of film configuration are demanded currently that afford higher sensitivity. However, the solder resist disclosed in JP-A 61-243869 set forth above represents such disadvantages that the film formed from the solder resist exhibits 5 excessively high tackiness at the surface, thus peeling cannot be conducted easily between supports or protective films and photosensitive layers; the shelf life is a few months at most even in refrigerated preservation at - 20 °C or less; and the film formed from the solder resist displays substantially no sensitivity for the laser beam of wavelength 405 nm. o Further, JP-A No. 02-097502 discloses a solder resist, which is incorporated a binder that is soluble in alkaline solutions and has a relatively high molecular mass of 10000 or more. The solder resist exhibits lower tackiness at the surface, superior thermal resistance, and relatively long shelf stability. However, the solder resist represents disadvantages that the surface hardness is lower, and the laminating 5 ability is poor. Therefore, a liquid monomer should be coated for an undercoat layer so as not to yield bubbles at outer most layer of printed wiring boards on which a wiring pattern is formed already, thus the production process is complicated, and the handling is difficult. The disadvantages are possibly derived from the reason that the binder is based on a copolymer of which the ingredients include methyl methacrylate and styrene that produce relatively hard polymer such that Tg of polymethyl methacrylate is 105 °C and Tg of polystyrene is about 100 °C; consequently, the cured film exhibits insufficient flexibility, considerable brittleness, and lower surface hardness, and also the solder resist represents insufficient 5 flowability at laminating step under evacuating and heating, therefore bubbles tend to yield. In addition, the film formed from the solder resist displays substantially no sensitivity for the laser beam of wavelength 405 nm. As such, photosensitive compositions and photosensitive films, and permanent patterns and effective processes for forming thereof are demanded o currently that may represent little surface tackiness, proper laminating ability, appropriate handling property, and superior shelf stability, and may display superior chemical resistance, higher surface hardness, and sufficient thermal resistance after developing, and also are adapted to laser direct imagings (LDI).

5 Disclosure of Invention The objects of the present invention are to provide photosensitive compositions and photosensitive films, capable of forming images by means of UV irradiation, that may represent little surface tackiness, proper laminating ability, appropriate handling property, and superior shelf stability, and also may display o superior chemical resistance, higher surface hardness, and sufficient thermal resistance after developing; in addition, to provide highly fine and precise permanent patterns such as protective layers, interlayer insulating films, and solder resist patterns and the like as well as processes for forming effectively the permanent patterns. These objects may be attained by the present invention as explained in the5 following. In an aspect, the present invention provides a photosensitive composition that comprises (A) a copolymer, (B) a polymerizable compound, and (C) a photopolymerization initiator or photoinitiator, wherein the copolymer (A) is synthesized from a precursor copolymer containing at least a monomer unit of maleic anhydride and a primary amine compound, by reacting one equivalent of anhydride group of the precursor copolymer with 0.1 to 1.2 equivalent of the primary amine compound. The photosensitive composition may bring about advantages of little surface tackiness, proper laminating ability, appropriate handling property, and superior shelf stability, and also may display superior chemical resistance, higher surface hardness, and sufficient thermal resistance after developing, owing to the combination of the copolymer, polymerizable compound, and photopolymerization initiator, and also the specific properties of the copolymer. Preferably, the copolymer (A) is synthesized by reacting (a) maleic anhydride,

(b) an aromatic vinyl monomer, and (c) a vinyl monomer of which the homopolymer represents a glass transition temperature of less than 80 °C, thereby to form the precursor copolymer, then reacting one equivalent of anhydride group of the precursor copolymer with 0.1 to 1.0 equivalent of the primary amine compound. These features may enhance the advantages set forth above more significantly. Preferably, the photosensitive composition comprises a thermal crosslinking agent. The thermal crosslinking agent may increase the film strength of hardened permanent patterns obtained from the inventive photosensitive composition. Preferably, the thermal crosslinking agent is an alkylated methylolmelamine. The alkylated methylolmelamine may lead to the advantage of superior shelf stability, in addition to the higher film strength of hardened permanent patterns set forth above. Preferably, the polymerizable compound (B) is selected from monomers containing a (meth)acrylic group; the photopolymerization initiator (C) comprises a compound selected from the group consisting of halogenated hydrocarbon derivatives, phosphine oxides, hexaaryl-biimidazols, oxime derivatives, organic peroxides, thio compounds, ketone compounds, acylphosphine oxide compounds, aromatic onium salts, and ketoxime ethers. These polymerizable compound (B) and photopolymerization initiator (C) may enhance the inventive advantages set forth above more significantly. In another aspect, the present invention provides a photosensitive film comprising a support, and a photosensitive layer, wherein the photosensitive layer is formed of the photosensitive composition set forth above, and the photosensitive layer is laminated on the support. The support of the photosensitive film may allow 5 easy handling of the photosensitive layer, thus affording efficient production of permanent patterns and the like. Preferably, the photosensitive film is exposed by means of a laser beam subjected to modulating and then compensating, the modulating is performed by a laser modulator which comprises plural imaging portions each capable of receiving o the laser beam and outputting the modulated laser beam, and the compensating is performed by transmitting the modulated laser beam through plural microlenses each having a non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portion, and the plural microlenses are arranged to a microlens array. The non-spherical surface of microlens may5 efficiently compensate the aberration due to distortion of the output surface of the imaging portion, consequently, allowing to form highly fine and precise permanent patterns. Preferably, the photosensitive film is exposed by means of a laser beam subjected to modulating by a laser modulator and then transmitting through a o microlens array of plural microlenses, the laser modulator comprises plural imaging portions each capable of receiving the laser beam and outputting the modulated laser beam, and the microlens array has an aperture configuration of the plural microlenses capable of substantially shielding incident light other than the modulated laser beam from the laser modulator. In these features, the laser beam 5 reflected or transmitted at the periphery portions of the imaging portion, particularly the laser beam reflected at the four corners cannot be collected by the microlens, thus the distortion of laser beam may be prevented at the collecting site. Consequently, exposing on the photosensitive layer may be highly fine and precise, and developing of the photosensitive layer may result in highly fine and precise permanent patterns. Preferably, the support comprises a synthetic resin and is transparent; the support is of an elongated shape; the photosensitive film is of an elongated shape formed by winding into a roll shape; a protective film is provided on the photosensitive layer of the photosensitive film; and the thickness of the photosensitive layer is 3 μm to 100 μm. These features may enhance the production efficiency of permanent patterns in particular. In still another aspect, the present invention provides a process for forming a permanent pattern that comprises coating a photosensitive composition on a substrate, drying the photosensitive composition to form a photosensitive layer on the substrate, exposing the photosensitive layer, and developing the exposed photosensitive layer, wherein the photosensitive composition is one set forth above. In still another aspect, the present invention provides a process for forming a permanent pattern that comprises laminating a photosensitive film on a substrate to form a photosensitive layer on the substrate under at least one of heating and pressuring, exposing the photosensitive layer, and developing the exposed photosensitive layer, wherein the photosensitive composition is one set forth above. These processes may produce efficiently the permanent patterns having advantages set forth above such as superior chemical resistance, higher surface hardness, and sufficient thermal resistance after developing in particular. Preferably, the substrate is a printed wiring board on which a wiring pattern is formed already. In such case, the process may produce multiplayer wiring substrates and buildup wiring substrates that are mounted semiconductors or other parts with higher densities. Preferably, the exposing is performed image-wise depending on pattern information to be formed; and the exposing is performed by means of a laser beam that is modulated depending on a control signal, and the control signal is generated depending on pattern information to be formed. Preferably, the exposing is performed by use of a laser source for irradiating a laser beam and a laser modulator for modulating the laser beam depending on the pattern information to be formed; and the laser modulator is equipped with a unit configured to generate a control signal depending on pattern information to be formed, and the laser modulator modulates the laser beam from the laser source depending on the control signal. These features may allow rapid and precise processes for forming permanent patterns in particular. Preferably, the laser modulator is equipped with plural imaging portions, and the laser modulator is capable of controlling a part of the plural imaging portions depending on pattern information. This feature may allow relatively rapid modulation of laser beams irradiated from the laser source. Preferably, the laser modulator is a spatial light modulator; the spatial light modulator is a digital micromirror device (DMD); the imaging portions are formed of micromirrors. These features allow efficient processes for forming permanent patterns. Preferably, the exposing is performed by means of a laser beam subjected to modulating and then compensating, the modulating is performed by a laser modulator which comprises plural imaging portions each capable of receiving the laser beam and outputting the modulated laser beam, and the compensating is performed by transmitting the modulated laser beam through plural microlenses each having a non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portion, and the plural microlenses are arranged to a microlens array. The compensating of the aberration due to distortion of the output surface of the imaging portion may allow to form highly fine and precise permanent patterns. Preferably, the photosensitive film is exposed by means of a laser beam subjected to modulating by a laser modulator and then transmitting through a microlens array of plural microlenses, and the microlens array has an aperture configuration of the plural microlenses capable of substantially shielding incident light other than the modulated laser beam from the laser modulator; each of the microlenses has a non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portions; the non-spherical surface is a toric surface; each of the microlenses has a circular aperture configuration; and the aperture configuration of the plural microlenses is defined by light shielding portion provided on the microlens surface. In these features, the laser beam reflected or transmitted at the periphery portions of the imaging portion, particularly the laser beam reflected at the four corners cannot be collected by the microlens, thus the distortion of laser beam may be prevented at the collecting site, consequently, exposing on the photosensitive layer may be highly fine and precise. Preferably, the exposing is performed by a laser beam transmitted through an aperture array; the exposing is performed while moving relatively the laser beam and the photosensitive layer; and the exposing is performed on a partial region of the photosensitive layer. These features may bring about efficient processes in particular. Preferably, the laser source is capable of irradiating two or more types of laser beams together with; the laser source comprises plural lasers, a multimode optical fiber, and a collective optical system that collects the laser beams from the plural lasers into the multimode optical fiber; and the exposing is performed by means of laser beam having a wavelength of 395 nm to 415 nm. These features may bring about highly fine and precise permanent patterns in particular. Preferably, the photosensitive layer is hardened following the developing; and the photosensitive layer is hardened by means of at least one of irradiating the entire surface and heating the entire surface to 120 °C to 200 °C. These features may bring about remarkable increase of film strength. Preferably, the pattern is one selected from the group consisting of protective films, interlayer insulating films, and solder resist patterns, thus commercially available products may be produced. In still another aspect, the present invention provides a permanent pattern, wherein the permanent pattern is formed by the process for forming a permanent pattern set forth above. The pattern according to the present invention may represent little surface tackiness, proper laminating ability, appropriate handling property in particular. Preferably, the permanent pattern is one selected from the group consisting of protective films, interlayer insulating films, and solder resist patterns.

5 Brief Description of Drawings FIG. 1 is a partially enlarged view that shows exemplarily a construction of a digital micromirror device (DMD). FIG. 2A is a view that explains exemplarily the motion of the DMD. o FIG. 2B is a view that explains exemplarily the motion of the DMD. FIG. 3 A is an exemplary plan view that shows the exposing beam and the scanning line in the case that the DMD is not inclined. FIG. 3B is an exemplary plan view that shows the exposing beam and the scanning line in the case that the DMD is inclined. 5 FIG.4A is an exemplary view that shows an available region of the DMD. FIG.4B is an exemplary view that shows another available region of the DMD. FIG. 5 is an exemplary plan view that explains a way to expose a photosensitive layer in one scanning by means of a scanner. o FIG. 6 A is an exemplary plan view that explains a way to expose a photosensitive layer in plural scannings by means of a scanner. FIG. 6B is another exemplary plan view that explains a way to expose a photosensitive layer in plural scannings by means of a scanner. FIG. 7 is a schematic perspective view that shows exemplarily a pattern 5 forming apparatus. FIG. 8 is a schematic perspective view that shows exemplarily a scanner construction of a pattern forming apparatus. FIG. 9A is an exemplary plan view that shows exposed regions formed on a photosensitive layer. FIG. 9B is an exemplary plan view that shows regions exposed by respective exposing heads. FIG. 10 is a schematic perspective view that shows exemplarily an exposing head containing a laser modulator. 5 FIG. 11 is an exemplary cross section that shows the construction of the exposing head shown in FIG. 10 in the sub-scanning direction along the optical axis. FIG. 12 shows an exemplary controller to control the DMD based on pattern information. FIG. 13A is an exemplary cross section that shows a construction of -mother i o exposing head in other connecting optical system along the optical axis. FIG. 13B is an exemplary plan view that shows an optical image projected on an exposed surface when a microlens array is not employed. FIG. 13C is an exemplary plan view that shows an optical image projected on an exposed surface when a microlens array is employed. 15 FIG. 14 is an exemplary view that shows distortion of a reflective surface of a micromirror that constitutes a DMD by means of contour lines. FIG 15 A is an exemplary graph that shows height displacement of a micromirror along the X direction. FIG 15B is an exemplary graph that shows height displacement of a 2 o micromirror along the Y direction. FIG. 16A is an exemplary front view that shows a microlens array employed in a pattern forming apparatus. FIG. 16B is an exemplary side view that shows a microlens array employed in a pattern forming apparatus. 25 FIG. 17A is an exemplary front view that shows a microlens of a microlens array. FIG. 17B is an exemplary side view that shows a microlens of a microlens array. FIG. 18A is an exemplary view that schematically shows a laser collecting condition in a cross section of a microlens. FIG. 18B is an exemplary view that schematically shows a laser collecting condition in another cross section of a microlens. FIG. 19A is an exemplary view that shows a simulation of beam diameters 5 near the focal point of a microlens in accordance with the present invention. FIG. 19B is an exemplary view that shows another simulation similar to FIG. 19A in terms of other sites in accordance with the present invention. FIG. 19C is an exemplary view that shows still another simulation similar to FIG. 19A in terms of other sites in accordance with the present invention. o FIG. 19D is an exemplary view that shows still another simulation similar to . FIG. 19A in terms of other sites in accordance with the present invention. FIG. 20A is an exemplary view that shows a simulation of beam diameters near the focal point of a microlens in a conventional pattern forming process. FIG. 20B is an exemplary view that shows another simulation similar to FIG. 5 20A in terms of other sites. FIG. 20C is an exemplary view that shows still another simulation similar to FIG. 20A in terms of other sites. FIG. 20D is an exemplary view that shows still another simulation similar to FIG. 20A in terms of other sites. o FIG. 21 is an exemplary plan view that shows another construction of a combined laser source. FIG. 22A is an exemplary front view that shows a microlens of a microlens array. FIG. 22B is an exemplary side view that shows a microlens of a microlens5 array. FIG. 23A is an exemplary view that schematically shows a laser collecting condition in the cross section of the microlens shown in FIG. 22B. FIG. 23B is an exemplary view that schematically shows a laser collecting condition in another cross section of the microlens shown in FIG. 22B. FIG. 24A is an exemplary view that explains the concept of compensation by an optical system of optical quantity distribution compensation. FIG. 24B is another exemplary view that explains the concept of compensation by an optical system of optical quantity distribution compensation. 5 FIG. 24C is another exemplary view that explains the concept of compensation by an optical system of optical quantity distribution compensation. FIG. 25 is an exemplary graph that shows an optical quantity distribution of Gaussian distribution without compensation of optical quantity. FIG. 26 is an exemplary graph that shows a compensated optical quantity o distribution by an optical system of optical quantity distribution compensation. FIG. 27A (A) is an exemplary perspective view that shows a constitution of a fiber array laser source. FIG. 27A (B) is a partially enlarged view of FIG. 27A (A). FIG. 27A (C) is an exemplary plan view that shows an arrangement of 5 emitting sites of laser output. FIG. 27A (D) is an exemplary plan view that shows another arrangement of laser emitting sites. FIG. 27B is an exemplary front view that shows an arrangement of laser emitting sites in a fiber array laser source. o FIG. 28 is an exemplary view that shows a construction of a multimode optical fiber. FIG. 29 is an exemplary plan view that shows a construction of a combined laser source. FIG.30 is an exemplary plan view that shows a construction of a laser5 module. FIG. 31 is an exemplary side view that shows a construction of the laser module shown in FIG. 30. FIG. 32 is a partial side view that shows a construction of the laser module shown in FIG. 30. FIG. 33 is an exemplary perspective view that shows a construction of a laser array. FIG. 34A is an exemplary perspective view that shows a construction of a multi cavity laser. 5 FIG. 34B is an exemplary perspective view that shows a multi cavity laser array in which the multi cavity lasers shown in FIG. 34A are arranged in an array. FIG. 35 is an exemplary plan view that shows another construction of a combined laser source. FIG. 36A is an exemplary plan view that shows still another construction of a o combined laser source. FIG. 36B is an exemplary cross section of FIG.36A along the optical axis. FIG. 37A is an exemplary cross section of an exposing device that shows focal depth in the pattern forming process of the prior art. FIG. 37B is an exemplary cross section of an exposing device that shows focal 5 depth in the process for forming a permanent pattern according to the present invention. FIG. 38A is a front view of another exemplary microlens that constitute a microlens array. FIG. 38B is a side view of another exemplary microlens that constitute a o microlens array. FIG. 39A is a front view of still another exemplary microlens that constitute a microlens array. FIG. 39B is a side view of still another exemplary microlens that constitute a microlens array. 5 FIG. 40 is an exemplary graph that shows a lens configuration. FIG. 41 is an exemplary graph that shows another lens configuration. FIG. 42 is an exemplary perspective view that shows a microlens array. FIG. 43 is an exemplary plan view that shows another microlens array. FIG. 44 is an exemplary plan view that shows still another microlens array. FIG. 45 A is an exemplary longitudinal section that shows still another microlens array. FIG. 45B is an exemplary longitudinal section that shows still another microlens array. 5 FIG. 45C is an exemplary longitudinal section that shows still another microlens array.

Best Mode for Carrying Out the Invention (Photosensitive Composition) o The photosensitive composition in the present invention comprises (A) a binder, (B) a polymerizable compound, and (C) a photopolymerization initiator, and preferably comprises a thermal crosslinking agent, and optionally comprises a color pigment, filler, thermal polymerization inhibitor, surfactant, and other components. [(A) Binder] 5 Preferably, the binder is swellable in alkaline aqueous solutions, more preferably the binder is soluble in alkaline aqueous solutions. The binders that are swellable or soluble in alkaline aqueous solutions are typically those having an acidic group. The binder is selected from copolymers synthesized by way of reacting o anhydride group of maleic anhydride copolymer with one or more types of primary amine compounds. The maleic anhydride copolymers are expressed by formula (1) below. Preferably, the maleic anhydride copolymers are maleamic acid copolymers comprising a maleamic acid unit B that has a half amide structure of maleic acid and a unit A that has not the half amide structure of maleic acid. 5 The unit A may be composed of one type of moiety or no less than two types of moiety. When the unit A is composed of one type of moiety and the unit B is also composed of one type of moiety, the maleamic acid copolymer is a binary copolymer; and when^, the unit A is composed of two types of moiety and the unit B is composed of one type of moiety, the maleamic acid copolymer is a ternary copolymer. Preferable example of the unit A is the combination of an aryl group and a vinyl monomer of which the homopolymer represents a glass transition temperature of less than 80 °C.

B

5 In the formula (1), R³ and R⁴ are each a hydrogen atom or a lower alkyl group. Each of "x" and "y" is the mole fraction of the repeated unit; for example, when the unit A is composed of one type of moiety, "x" is 85 to 50 mole %, and "y" is 15 to 50 mole %. Examples of R¹ in the formula (1) include substituents such as -COOR¹⁰, o -CONR^UR¹², substituted or unsubstituted aryl group, -OCOR¹³, -OR¹⁴, and -COR¹⁵, wherein R¹⁰ to R¹⁵ are each selected from hydrogen atom, and substituted or unsubstituted alkyl groups, aryl groups, and aralkyl groups. Each of the alkyl groups, aryl groups, and aralkyl groups may be of cyclic or branched structure. Examples of R¹⁰ to R¹⁵ include methyl, ethyl, n-propyl, i-propyl, n-butyl, 5 i-butyl, sec-butyl, t-butyl, pentyl, allyl, n-hexyl, cyclohexyl, 2-ethylhexyl, dodecyl, methoxyethyl, phenyl, methylphenyl, methoxyphenyl, benzyl, phenethyl, naphtyl, and chlorophenyl. Examples of R¹ include benzene derivatives such as phenyl, α-methylphenyl, 2-methylphenyl, 3-methylphenyl, 4-methylphenyl, and 2,4-dimethylphenyl; o n-propyloxycarbonyl, n-butyloxycarbonyl, pentyloxycarbonyl, hexyloxycarbonyl, n-hexyloxycarbonyl, 2-ethylhexyloxycarbonyl, and methyloxycarbonyl. Examples of R² in the formula (1) include substituted or unsubstituted alkyl groups, aryl groups, and aralkyl groups, which may be of cyclic or branched structure; specific examples of R² include benzyl, phenethyl, 3-phenyl-l-propyl, 4-phenyl-l-butyl, 5-phenyl-l-pentyl, 6-phenyl-l-hexyl, -methylbenzyl, 2-methylbenzyl, 3-methylbenzyl, 4-methylben_zyl, 2-(p-tolyl)ethyl, 5 β-methylphenethyl, l-methyl-3-phenylpropyl, 2-chlorobenzyl, 3-chlorobenzyl, 4-chlorobenzyl, 2-fluorobenzyl, 3-fluorobenzyl, 4-fluorobenzyl, 4-bromophenethyl, 2-(2-chlorophenyl)ethyl, 2-(3-chlorophenyl)ethyl, 2~(4-chlorophenyl)ethyl, 2-(2-fluorophenyl)ethyl, 2-(3-fluorophenyl)ethyl, 2-(4-fluorophenyl)ethyl, 4-fluoro-α,α-dimethylphenethyl, 2-methoxybenzyl, 3-methoxybenzyl, o 4-methoxybenzyl, 2-ethoxybenzyl, 2-methoxyphenethyl, 3-methoxyphenethyl, 4-methoxyphenethyl, methyl, ethyl, propyl, 1-propyl, butyl, t-butyl, sec-butyl, phenyl, hexyl, cyclohexyl, heptyl, octyl, lauryl, phenyl, 1-naphthyl, methoxymethyl, 2-methoxyethyl, 2-ethoxyethyl, 3-methoxypropyl, 2-butoxyethyl, 2-cyclohexyloxyethyl, 3-ethoxypropyl, 3-propoxypropyl, and5 isopropoxypropylamine. Particularly preferable binders are copolymers synthesized by way of reacting anhydride group of precursor copolymers, which are formed from (a) maleic anhydride, (b) aromatic vinyl monomers, and (c) vinyl monomers of which the homopolymer represents a glass transition temperature of less than 80 °C, with o primary amine compounds. The copolymers formed from (a) and (b) indicated above may be insufficient in laminating ability while the photosensitive layer may exhibit higher surface hardness. The copolymers formed from (a) and (c) indicated above may exhibit lower surface hardness while the photosensitive layer may be sufficient in laminating ability.5 — (b) Aromatic Vinyl Monomer — The aromatic vinyl monomers may be properly selected depending on the application; preferably are the aromatic vinyl monomers of which the homopolymer represents a glass transition temperature (Tg) of 80 °C or more, more preferably 100 °C or more. Specific examples of the aromatic vinyl monomers include styrene of which the homopolymer represents a Tg of about 100 °C, and styrene derivatives such as α-methylstyrene of which the homopolymer represents a Tg of about 168 °C, 2-methylstyrene of which the homopolymer represents a Tg of about 136 °C, 5 3-methylstyrene of which the homopolymer represents a Tg of about 97 °C, 4-methylstyrene of which the homopolymer represents a Tg of about 93 °C, and 2,4-dimethylstyrene of which the homopolymer represents a Tg of about 112 °C. These may be used alone or in combination. ~ (c) Vinyl Monomer — l o The vinyl monomer set forth above is required that the homopolymer of the vinyl polymer represents a Tg of less than 80 °C, preferably 40 °C or less, more preferably 0 °C or less. Specific examples of the vinyl monomers include n-propylacrylate of which the homopolymer represents a Tg of - 37 °C, n-butylacrylate of which the

15 homopolymer represents a Tg of - 54 °C, pentylacrylate or hexylacrylate of which the homopolymers represent a Tg of - 57 °C, n-butylmethacrylate of which the homopolymer represents a Tg of - 24 °C, and n-hexylmethacrylate of which the homopolymer represents a Tg of - 5 °C. These may be used alone or in combination.

20 - Primary Amine Compound - Examples of the primary amine compounds set forth above include benzylamine, phenethylamine, 3-phenyl-l-propylamine, 4-phenyl-l-butylamine, 5-phenyl-l-pentylamine, 6-phenyl-l-hexylamine, α-methylbenzylamine, 2-methylbenzylamine, 3-methylbenzylamine, 4-methylbenzylamine,

25 2-(p-tolyl)ethylamine, β-methylphenethylamine, l-methyl-3-phenylpropylamine, 2-chlorobenzylamine, 3-chlorobenzylamine, 4-chlorobenzylamine, 2-fluorobenzylamine, 3-fluorobenzylamine, 4-fluorobenzylamine, 4-bromophenethylamine, 2-(2-chlorophenyl)ethylamine, 2-(3-chlorophenyl)ethylamine, 2-(4-chlorophenyl)ethylamine, 2-(2-fluorophenyl)ethylamine, 2-(3-fluorophenyl)ethylamine, 2-(4-fluorophenyl)ethylamine, 4-fluoro- , -dimethylphenethylamine, 2-methoxybenzylamine, 3-methoxybenzylamine, 4-methoxybenzylamine, 2-ethoxybenzylamine, 2-methoxyphenethylamine, 3-methoxyphenethylamine, 4-methoxyphenethylamine, methylamine, ethylamine, propylamine, 1-propylamine, butylamine, t-butylamine, sec-butylamine, pentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, laurylamine, aniline, octylaniline, anisidine, 4-chloroaniline, 1-naphthylamine, methoxymethylamine, 2-methoxyethylamine, 2-ethoxyethylamine, 3-methoxypropylamine, 2-butoxyethylamine, 2-cyclohexyloxyethylamine, 3-ethoxypropylamine, 3-propoxypropylamine, and 3-isopropoxypropylamine.

Among these, benzylamine and phenethylamine are preferable in particular. These primary amines may be used alone or in combination. The reactive amount of the primary amine compound is required to be 0.1 to 1.2 equivalent, preferably 0.1 to 1.0 equivalent, based on one equivalent of the anhydride group. When the reactive amount is above 1.2 equivalents, the solubility of the resulting binder may be deteriorated. The content of maleic anhydride unit in the binder or the copolymer is preferably 15 to 50 mole %, more preferably 20 to 45 mole %, and still more preferably 20 to 40 mole % based on the molecule of the binder or the copolymer set forth above. When the content is less than 15 mole %, alkaline developing may not been conducted, and when the content is more than 50 mole %, the alkaline resistance may be poor, and the synthesizing of the copolymer set forth above tends to be difficult, thus proper permanent patterns may not be formed. Preferably, the contents of (b) aromatic vinyl monomer and (c) vinyl monomer, of which the homopolymer represents a glass transition temperature of less than 80 °C, are 20 to 60 mole % and 15 to 40 mole % respectively. When the contents are within the ranges, both of the surface hardness and the laminating ability may be satisfactory. The molecular mass of the binder set forth above is preferably 3000 to 500000, more preferably is 8000 to 150000. When the molecular mass is less than 3000, the film of the photosensitive layer may be brittle after curing and the surface hardness may be poor, and when the molecular mass is above 500000, the flowability of the photosensitive composition is likely to be lower at heating and laminating, thus the 5 laminating ability may be insufficient and also developing property may be deteriorated. Preferably, the solid content of the binder based on the entire solid of the photosensitive composition is 5 to 70 % by mass, more preferably is 10 to 50 % by mass. When the solid content is less than 5 % by mass, the film strength of the o photosensitive layer is likely to be lower, and the tackiness on the surface of the photosensitive layer may be deteriorated, and when the solid content is more than 70 % by mass, the exposure sensitivity may be lower. [(B) Polymerizable Compound] The polymerizable compound may be properly selected depending on the5 application. The polymerizable compound contains at least one group that enables addition polymerization, and preferably has a boiling point of 100 °C or more at normal pressure; examples of the polymerizable compound include monomers having a (meth)acrylic group. The monomer having a (meth)acrylic group may be properly selected o depending on the application, examples of the monomer include mono-functional acrylate and mono-functional methacrylate such as polyethylene glycol momo(meth)acrylate, polypropylene glycol momo(meth) acrylate, and phenoxyethyl (meth)acrylate; polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, trimethylolethane triacrylate, trimethylolpropane triacrylate, 5 trimethylolpropane trimethacrylate, trimethylolpropane diacrylate, neopentylglycol di(meth)acrylate, pentaerythritol tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth) acrylate, dipentaerythritol penta(meth)acrylate, hexanediol di(meth)acrylate, trimethylolpropane tri(acryloyloxypropyl)ether, tri(acryloyloxyethyl)isocyanurate, tri(acryloyloxyethyl)cyanurate, glycerin tri(meth)acrylate; additional reaction products of polyfunctional alcohols such as trimethylolpropane, glycerin, and bisphenol and ethylene oxide or propylene oxide followed by (meth)acrylation; urethane acrylates described in JP-B Nos. 48-41708 and 50-6034, and JP-A No. 5 51-37193; and polyester acrylates described in JP-A No. 48-64183, JP-B Nos. 49-43191 and 52-30490; polyfunctional acrylate or methacrylate such as epoxyacrylate obtained from epoxy resins and (meth) acrylic acid. Among these, trimethylolpropane tri(meth) acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and dipentaerythritol o penta(meth)acrylate are preferable in particular. Preferably, the solid content of the polymerizable compound based on the entire solid of the photosensitive composition is 5 to 50 % by mass, more preferably is 10 to 40 % by mass. When the solid content is less than 5 % by mass, the developing property may be insufficient and the exposure sensitivity may be lower, and when5 the solid content is more than 50 % by mass, the tack property of the photosensitive layer may be disadvantageously significant. [(C) Photopolymerization Initiator or Photoinitiator] The photopolymerization initiator may be properly selected from conventional ones without particular limitations as long as having the property to o initiate polymerization; preferably is the initiator that exhibits photosensitivity from ultraviolet rays to visual lights. The photopolymerization initiator may be an active substance that generates a radical due to an effect with a photo-exited photosensitizer, or an active substance that initiates cation polymerization depending on the monomer species. 5 Preferably, the photopolymerization initiator contains at least one component that has a molecular extinction coefficient of about 50 M^cπr¹ in a range of about 300 to 800 nm, more preferably about 330 to 500 nm. Examples of the photopolymerization initiator include halogenated hydrocarbon derivatives such as having a triazine skeleton or an oxadiazole skeleton, phosphine oxides, hexaaryl-biimidazols, oxime derivatives, organic peroxides, thio compounds, acylphosphine oxide compounds, ketone compounds, aromatic onium salts, and ketoxime ethers. Examples of the halogenated hydrocarbon compounds having a triazine 5 skeleton include the compounds described in Bulletin of the Chemical Society of Japan, by Wakabayashi, 42, 2924 (1969); GB Pat. No. 1388492; JP-A No. 53-133428; DE Pat. No. 3337024; Journal of Organic Chemistry, by F.C. Schaefer et. al. 29, 1527 (1964); JP-A Nos. 62-58241, 5-281728, and 5-34920; and US Pat. No. 4212976. Examples of the compounds described in Bulletin of the Chemical Society of o Japan, by Wakabayashi, 42, 2924 (1969) set forth above include 2-phenyl-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-chlorophenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-tolyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 5 2-(2,4-dichlorophenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2,4,6-tris(trichloromethyl)-l,3,5-triazine, 2-methyl-4,6-bis (trichlor omethyl)-l,3,5-triazine, 2-n-nonyl-4,6-bis(trichloromethyl)-l,3,5-triazine, and 2-(α,α,β-trichloroethyl)-4,6-bis(trichloromethyl)-l,3,5-triazine. o Examples of the compounds described in GB Pat. No. 1388492 set forth above include 2-styryl-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-methylstyryl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-methoxystyryl)-4,6-bis(trichloromethyl)-l,3,5-triazine, and 2-(4-methoxystyryl)-4-arnino-6-trichloromethyl-l,3,5-triazine. 5 Examples of the compounds described in JP-A No. 53-133428 set forth above include 2-(4-methoxynaphtho-l-yl)-4,6-bistrichloromethyl-l,3,5-triazine, 2-(4-ethoxynaphtho-l-yl)-4,6-bistrichloromethyl-l,3,5-triazine, 2-[4-(2-ethoxyethyl)-naphtho-l-yl]-4,6-bistrichloromethyl-l,3,5-triazine, 2-(4,7-dimethoxynaptho-l-yl)-4,6-bistrichloromethyl-l,3,5-triazine, and 2-(acenaphtho-5-yl)-4,6-bistrichloromethyl-l,3,5-triazine. Examples of the compounds described in DE Pat. No. 3337024 set forth above include 2-(4-styrylphenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-(4-methoxystyryl)phenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(l-naphthylvinylenephenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-chlorostyrylphenyl-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-tMophene-2-vinylenephenyl)-4,6-bis(Mchloromethyl)-l,3,5-triazine, 2-(4-thiophene-3-vinylenephenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-furan-2-vinylenephenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, and 2-(4-benzofuran-2-vinylenephenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine. Examples of the compounds described in Journal of Organic Chemistry, by F.C. Schaefer et. al. 29, 1527 (1964) set forth above include 2-methyl-4,6-bis(tribromomethyl)-l,3,5-triazine,

2,4,6-tris(tribromomethyl)-l,3,5-triazine, 2,4,6-tris(dibromomethyl)-l,3,5-triazine, 2-amino-4-methyl-6-tribromomethyl-l,3,5-triazine and 2-methoxy-4-methyl-6-trichloromethyl-l,3,5-triazine. Examples of the compounds described in JP-A No. 62-58241 set forth above include 2-(4-phenylethylphenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-naphthyl-l-ethynylphenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-(4-triethynyl)phenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine,

2-(4-(4-methoxyphenyl)ethynylphenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(4-(4-isopropylphenylethynyl)phenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, and 2-(4-(4-ethylphenylethynyl)phenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine. Examples of the compounds described in JP-A No. 5-281728 set forth above include 2-(4-txifluoromethylphenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(2,6-difluorophenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, 2-(2,6-dichlorophenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine, and 2-(2,6-dibromophenyl)-4,6-bis(trichloromethyl)-l,3,5-triazine. Examples of the compounds described in JP-A No. 5-34920 set forth above include 2,4-bis(trichloromethyl)-6-[4-(N,N-diethoxycarbonylmethylamino)- 3-bromophenyl]-l,3,5-triazine, trihalomethyl-s-triazine compounds described in US Pat. No.4239850, and also 2,4,6-tris(tricr_loromethyl)-s-triazine, and 2-(4-chlorophenyl)-4,6-bis(tribromomethyl)-s-triazine. 5 Examples of the compounds described in US Pat. No. 4212976 set forth above include the compounds having an oxadiazole skeleton such as 2-trichloromethyl-5-phenyl-l,3,4-oxadiazole, 2-trichloromethyl-5-(4-chlorophenyl)-l,3,4-oxadiazole, 2-trichloromethyl-5-(l-naphthyl)-l,3,4-oxadiazole, o 2-trichloromethyl-5-(2-naphthyl)-l,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-l,3,4-oxadiazole, 2-tribromomethyl-5-(2-naphthyl)-l,3,4-oxadiazole, 2-trichloromethyl-5-styryl-l,3,4-oxadiazole, 2-trichloromethyl-5-(4-chlorostyryl)-l,3,4-oxadiazole, 5 2-trichloromethyl-5-(4-methoxystyryl)-l,3,4-oxadiazole, 2-trichloromethyl-5-(l-naphthyl)-l,3,4-oxadiazole, 2-trichloromethyl-5-(4-n-butoxystyryl)-l,3,4-oxadiazole, and 2-tribromomethyl-5-styryl-l,3,4-oxadiazole. Examples of oxime derivatives utilized properly in the present invention o include 3-benzoyloxyiminobutan-2-one, 3-acetoxyiminobutan-2-one, 3-propionyloxyiminobutan-2-one, 2-acetoxyiminopentan-3-one, 2-acetoxyimino-l-phenylpropane-l-one, 3-benzoyloxyimino-l-phenylpropane-l-one, 3-(4-toluenesulfonyloxy)iminobutan-2-one, and 2-ethoxycarbonyloxyimino-phenylpropane-l-one.5 As for photopolymerization initiators other than set forth above, the following substances are further exemplified: acridine derivatives such as 9-phenyl acridine and l,7-bis(9,9'-acridinyl)heptane; polyhalogenated compounds such as carbon tetrabromide, phenyltribromosulfone, and phenyltrichloromethylketone; coumarins such as 3-(2-benzofuroyl)-7-diethylaminocoumarin, 3-(2-ber_zofuroyl)-7-(l-pyrrolidinyl)coumarin, 3-benzoyl-7-diethylaminocoumarir _/ 3-(2-methoxybenzoyl)-7-diethylaminocoumarin, 3-(4-dimethyl_u_ninobenzoyl)-7-diethylaminocoumarin, 3,3 -carbonylbis(5,7-di-n-propoxycoumarin), 5 3,3'-carbonylbis(7-diethylaminocoumarin), 3-benzoyl-7-methoxycoumarin, 3-(2-furoyl)-7-diethylaminocoumarin, 3-(4-diethylaminocinnamoyl)-7-diethylaminocoumarin, 7-methoxy-3-(3-pyridylcarbonyl)coumarin, 3-benzoyl-5,7-dipropoxycoumarin, and 7-benzotriazol-2-ylcoumarin, and also the coumarin compounds described in JP-A o Nos. 5-19475, 7-271028, 2002-363206, 2002-363207, 2002-363208, and 2002-363209; amines such as ethyl 4-dimethylamibenzoate, n-butyl 4-dimethylamibenzoate, phenethyl 4-dimethylamibenzoate, 2-phthalimide 4-dimethylamibenzoate, 2-methacryloyloxyethyl 4-dimethylamibenzoate, pentamethylene-bis(4-dimethylaminobenzoate), phenethyl 3-dimethylamibenzoate,5 pentamethylene esters, 4-dimethylamino benzaldehyde, 2-chloro-4-dimethylamino benzaldehyde, 4-dimethylaminobenzyl alcohol, ethyl(4-dimethylaminobenzoyl)acetate, 4-piperidine acetophenone, 4-dimethyamino benzoin, N,N-dimethyl-4-toluidine, N,N-diethyl-3-phenetidine, tribenzylamine, dibenzylphenylamine, N-methyl-N-phenylbenzylamine, 4-bromo-N,N-diethylaniline, o and tridodecyl amine; amino fluorans such as ODB and ODBII; leucocrystal violet; acylphosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethylbenzoyl)-2,4,4-trimethyl-pentylphenylphosphine oxide, Lucirin TPO, metallocenes such as bis(η5-2,4-cyclopentadiene-l-yl)-bis(2,6-difluoro-3-(lH-pyrrole-l-yl)-phenyl)titanitιm.,5 η 5-c clopentadienyl-η 6-cumenyl-iron(l +)-hexafluorophosphate(l-), and the compounds described in JP-A No. 53-133428, JP-B Nos. 57-1819 and 57-6096, and US Pat. No. 3615455. Examples of the ketone compounds set forth above include benzophenone, 2-methylbenzophenone, 3-methylbenzophenone, 4-methylbenzophenone, 4-methoxybenzophenone, 2-chlorobenzophenone, 4-chlorobenzophenone, 4-bromobenzophenone, 2-carboxybenzophenone, 2-ethoxycarbonylbenzophenone, benzophenone-tetracarboxylic acid and its tetramethyl ester;

4,4'-bis(dialkylamino)benzophenones such as 4,4'-bis(dimethylamino)benzophenone, 4,4'-bis(cyclohexylamino)benzophenone, 4,4'-bis(diethylamino)benzophenone, 4,4'-bis(dihydroxyethylamino)benzophenone,

4-methoxy-4'-dimethylaminobenzophenone, 4,4'-dimethoxybenzophenone, and 4-dimethylaminobenzophenone; 4-dimethylaminoacetophenone, benzyl, anthraquinone, 2-tert-butylanthraquinone, 2-methylanthraquinone, phenanthraquinone, xanthone, thioxanthone, 2-chlorothioxanthone, 2,4-diethylthioxanthone, fluorene,

2-benzyl-dimethylamino-l-(4-morpholinophenyl)-l-butanone, 2-methyl-l-[4-(methylthio)phenyl]-2-morpholino-l-propanone, 2-hydroxy-2-methyl-[4-(l-methylvinyl)phenyl]propanol oligomer, benzoin; benzoin ethers such as benzoin methylether, benzoin ethylether, benzoin propylether, benzoin isopropylether, benzoin phenylether, and benzyl dimethyl ketal; acridone, chloroacridone, N-methylacridone, N-butylacridone, and N-butyl-chloroacridone. In order to adjust the exposure sensitivity and photosensitive wavelength for exposing of the photosensitive layer, a photosensitizer may be incorporated in addition to the photopolymerization initiator. The photosensitizer may be properly selected depending on the laser beam or optical irradiation from the laser source utilized in the present invention. The photosensitizer may be exited by active irradiation, and may generate a radical, an available acidic group and the like through interaction with other substances such as radical generators and acid generators by transferring energy or electrons. The photosensitizer may be properly selected without particular limitations from conventional substances; examples of the photosensitizer include polynuclear aromatics such as pyrene, perylene, and triphenylene; xanthenes such as fluorescein, Eosine, erythrosine, rhodamine B, and Rose Bengal; cyanines such as indocarbocianine, thiacarbocianine, and oxacarbocianine; merocianines such as merocianine and carbomerocianine; thiazins such as thionine, methylene blue, and toluidine blue; acridines such as acridine orange, chloroflavine, and acriflavine; anthraquinones such as anthraquinone; scariums such as scarium; acridones such as acridone, chloroacridone, N-methylacridone, N-butylacridone, N-butyl-chloroacridone; coumarins such as 3-(2-benzofuroyl)-7-diethylaminocoumarin, 3-(2-benzofuroyl)-7-(l-pyrrolidinyl)coumarin, 3-benzofuroyl-7-diethylaminocoumarin,

3-(2-methoxybenzoyl)-7-diethylaminocoumarin, 3-(4-diπιethylamLinobenzoyl)-7-diethylan inocoumιarin, 3,3'-carbonylbis(5,7-di-n-propoxycoumarin), 3,3'-carbonylbis(7-diethylaminocoumarin), 3-benzoyl-7-methoxycoumarin, 3-(2-f uroyl)-7-diethylaminocoumarin,

3-(4-diethylaminocinnamoyl)-7-diethylaminocoumarin,

7-methoxy-3-(3-pyridylcarbonyl)coumarin, 3-benzoyl-5,7-dipropoxycoumarin, and also the coumarin compounds described in JP-A Nos. 5-19475, 7-271028, 2002-363206, 2002-363207, 2002-363208, and 2002-363209. As for the combination of the photopolymerization initiator and the photosensitizer, the initiating mechanism that involves electron transfer may be exemplified such as combinations of (1) an electron donating initiator and a photosensitizer dye, (2) an electron accepting initiator and a photosensitizer dye, and (3) an electron donating initiator, and an electron accepting initiator, and a photosensitizer dye (ternary mechanism) as described in JP-A No. 2001-305734. The content of the photosensitizer is preferably 0.05 to 30 % by mass based on the entire composition of the photosensitive resin, more preferably is 0.1 to 20 % by mass, and still more preferably is 0.2 to 10 % by mass. When the content is less than 0.05 % by mass, the sensitivity toward the active energy ray may decrease, longer period may be required for exposing process, and the productivity tends to lower, and when the content is more than 30 % by mass, the photosensitizer may precipitate from the photosensitive layer during preservation period. 5 The photopolymerization initiator may be used alone or in combination. Examples of the photopolymerization initiators properly utilized in the present invention are those activated at 405 nm of laser beam wavelength in exposing step and selected from phosphine oxides, α-aminoalkylketones, complex initiators of halogenated hydrocarbons having a triazine skeleton and amine compounds as a o photosensitizer set forth later, hexaaryl biimidazole compounds, and titanocenes. The content of the photopolymerization initiator in the photosensitive composition is 0.1 to 30 % by mass, more preferably is 0.5 to 20 % by mass, and still more preferably is 0.5 to 15 % by mass. [Thermal crosslinking agent] 5 The thermal crosslinking agent may be properly selected depending on the application, and may be utilized for improving film strength of the photosensitive layer of post-curing within a range that does not adversely effect on the developing property. Examples of the thermal crosslinking agent include epoxy resin compounds, oxetane compounds, polyisocyanate compounds, blocked o polyisocyanate compounds, and melamine derivatives. Among these compounds, alkylated methylol melamines are preferable, particularly hexamethyl methylolmelamine is preferable. The solid content of the thermal crosslinking agent in the solid of the photosensitive composition is preferably 1 to 40 % by mass, more preferably is 3 to5 20 % by mass. When the content is less than 1 % by mass, the cured film may not exhibit sufficient increase in the cured film strength, and when the content is more than 40 % by mass, the developing property and the exposure sensitivity are likely to be disadvantageously poor. [Other Components] As for the other components, thermal polymerization inhibitor, plasticizer, coloring agent of pigment and dye, and filler are exemplified; in addition, adhesion promoter and the other auxiliaries such as conductive particles, filler, defoamer, fire retardant, leveling agent, peeling promoter, antioxidant, perfume, adjustor of surface 5 tension, chain transfer agent, and the like may be utilized together with. By means of incorporating these components properly, desirable properties such as stability with time, photographic property, film property, and the like of photosensitive compositions or photosensitive films may be tailored. - Thermal Polymerization Inhibitor - o The thermal polymerization inhibitor may be added to prevent the polymerization of the polymerizable compounds due to higher temperature and/ or longer duration. Examples of the thermal polymerization inhibitor include 4-methoxy phenol, hydroquinone, hydroquinone substituted with alkyl or aryl, t-butylcatechol, 5 pyrogallol, 2-hydroxybenzophenone, 4-methoxy-2-hydroxybenzophenone, cuprous chloride, phenothiazine, chloranil, naphthylamine, β-naphthol, 2,6-di-t-butyl-4-cresol, 2,2'-methylenebis(4-methyl-6-t-butylphenol), pyridine, nitrobenzene, dinitrobenzene, picric acid, toluidine, methylene blue, reaction products of copper and organic chelators, methyl salicylate, phenothiazine, nitroso compounds, and chelate 0 compounds of nitroso compounds and Al. The content of the thermal polymerization inhibitor is preferably 0.001 to 5 % by mass based on the polymerizable compound, more preferably is 0.005 to 2 % by mass, and still more preferably is 0.01 to 1 % by mass. When the content is less than 0.001 % by mass, the reservation stability may be insufficient, and when the content 5 is more than 5 % by mass, the sensitivity against active energy beams may be lowered. - Coloring Agent - The coloring agent may be properly depending on the application; example thereof include Victoria Pure Blue BO (CI. 42595), auramine (CI. 41000), Fat Black HB (CI. 26150), Monolite Yellow GT (CI. Pigment Yellow 12), Permanent Yellow GR (CI. Pigment Yellow 17), Permanent Yellow HR (CI. Pigment Yellow 83), Permanent Carmine FBB (CI. Pigment Red 146), Hosterberm Red ESB (CI. Pigment Violet 19), Permanent Ruby FBH (CI. Pigment Red 11), Fastel Pink B Supra (CI. Pigment Red 5 81), Monastral Fast Blue (CI. Pigment Blue 15), Monolite First Black B (CI. Pigment Black 1), carbon black, CI. Pigment Red 97, CI. Pigment Red 122, CI. Pigment Red 149, CI. Pigment Red 168, CI. Pigment Red 177, CI. Pigment Red 180, CI. Pigment Red 192, CI. Pigment Red 215, CI. Pigment Green 7, CI. Pigment Green 36, CI. Pigment Blue 15:1, CI. Pigment Blue 15:4, CI. Pigment Blue 15:6, CI. Pigment Blue o 22, CI. Pigment Blue 60, and CI. Pigment Blue 64. These may be used alone or in combination. The solid content of the coloring agent in the solid of the photosensitive composition may be properly selected depending on the exposure sensitivity and resolution of the photosensitive layer when the permanent pattern is produced, 5 typically the content is 0.05 to 10 % by mass, more preferably is 0.1 to 5 % by mass. - Filler - Inorganic pigment of organic fine particles may be incorporated into the photosensitive composition depending on the application in order to increase surface hardness of permanent patterns, to reduce thermal expansion coefficient, or to lower o dielectric constant or loss tangent of cured films. The organic pigment may be properly selected from commercially available materials; examples thereof include kaoline, barium sulfate, barium titanate, silicon oxide powder, silicon oxide fine particles, vapor-deposited silica, amorphous silica, crystalline silica, molten silica, spherical silica, talc, clay, magnesium carbonate, 5 calcium carbonate, aluminum oxide, aluminum hydroxide, and mica. The average particle size of the organic pigment is preferably 10 μm or less, more preferably is 3 μm or less. When the average particle size is more than 10 μm, the resolution may be deteriorated due to optical scattering. The organic fine particles may be properly selected depending on the application; examples thereof include melamine resins, benzoguanamine resins, and crosslinked polystyrene resins. In addition, porous spherical fine particles may be available such as of silica and crosslinked resins having an average particle size of 1 to 510 μm an oil 5 absorption of 100 to 200 ml/lOOg. The content of the filler is preferably 5 to 60 % by mass. When the content is less than 5 % by mass, the reduction of the thermal expansion coefficient may be insufficient, and when the content is more than 60 % by mass, the cured film on the photosensitive layer may be brittle, and the ability for protecting wirings may be o deteriorated after the permanent pattern is formed. - Adhesion Promoter - In order to enhance the adhesion between layers or between the photosensitive layer and the substrate, so-called adhesion promoters may be employed. 5 Examples of the adhesion promoters set forth above include those described in JP-A Nos. 5-11439, 5-341532, and 6-43638; specific examples of adhesion promoters include benzimidazole, benzoxazole, benzthiazole, 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, 2-mercaptobenzthiazole, 3-morpholinomethyl-l-phenyl-triazole-2-thion, o 3-morpholinomethyl-5-phenyl-oxadiazole-2-thion, 5-aιnino-3-πιorpholinonιethyl-thiadiazole-2-thion, 2-mercapto-5-methylthio-thiadiazole, triazole, tetrazole, benzotriazole, carboxybenzotriazole, benzotriazole containing an amino group, and silane coupling agents. 5 The content of the adhesion promoter is preferably 0.001 to 20 % by mass based on the total components in the photosensitive layer, more preferably is 0.01 to 10 % by mass, and still more preferably is 0.1 to 5 % by mass. The photosensitive compositions according to the present invention may represent little tackiness of the resulting surface, proper laminating ability, and appropriate shelf stability, and may display superior chemical resistance, higher surface hardness, and sufficient thermal resistance. Accorddngly, the photosensitive compositions may be widely applied to, for example, printecl wiring boards such as multilayer wiring boards and build-up wiring boards; displa-y members such as color filters, column member, rib member, spacer, and partition member; permanent patterns such as holograms, micro machines, and proofs. In particular, the photosensitive compositions may be properly applied to photosensitive films, process for forming permanent patterns, and permanent patterns according to the present invention. (Photosensitive Film) The photosensitive film according to the present invention comprises a support and a photosensitive layer; preferably the photosensitive layer further comprises a protective film, and optionally a cushioning layer, oxygen-gas barrier layer, and the like. The configuration of the photosensitive film may be jproperly selected depending on the application; for example, the photosensitive film is composed of the support, photosensitive layer, and protective film in order; the support, oxygen-gas barrier layer, photosensitive layer, and protective film in order; or the support, cushioning layer, oxygen-gas barrier layer, photosensitive layer, and protective film in order. By the way, the photosensitive layer may be of mono-layer or laminated layer. [Support] The support may be properly selected depending on the application; preferably, the support exhibits a peeling ability against the photosensitive layer, and the support is highly transparent and has higher surface flatness. Preferably, the support is formed from a transparent synthetic resin; examples of the synthetic resin include polyethylene terephthalate, polyethylene naphthalate, triacetyl cellulose, diacetyl cellulose, polyalkyl(naeth)acrylate, poly(meth)acrylate copolymer, polyvinyl chloride, polyvinyl alcohol, polycarbonate, polystyrene, cellophane, polyvinylidene chloride copolymer, polyamide, polyimide, vinylchloride-vinylacetate copolymer, polytetrafluoroethylene, polytrifluoroethylene, cellulose film, and nylon film; among these resins, polyethylene terephthalate is particularly preferable. These resins may be used alone or in combination. 5 Further, the support may be selected from those described in JP-A Nos. 4-208940, 5-80503, 5-173320, and 5-72724. The thickness of the support may be properly selected depending on the application; preferably, the thickness is 4 to 300 μm, and more preferably is 5 to 175 μm. i o The shape of the support may be properly selected depending on the application; preferably the shape is elongated. The length of the elongated support is selected from 10 to 20000 meters, for example. In the processes for forming the permanent patterns, the support is applied by slitting or cutting into appropriate length.

15 [Photosensitive layer] The photosensitive layer is formed of the photosensitive composition according to the invention. The site of the photosensitive layer in the photosensitive film may be properly selected depending on the application; usually the photosensitive layer is laminated on the support.

2 o Preferably, the photosensitive layer is exposed by a laser beam in a way that modulating is performed by a laser modulator which comprises plural imaging portions each capable of receiving the laser beam and outputting the modulated laser beam, and compensating is performed by transmitting the modulated laser beam through plural microlenses, arranged to a microlens array, each having a

25 non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portion, then exposing of the photosensitive layer is performed by means of the modulated and compensated laser beam. The thickness of the photosensitive layer may be properly selected depending on the application; preferably the thickness is 3 to 100 μm, more preferably is 5 to 70 μm. One of the representative ways to form the photosensitive layer on a support is to prepare a solution of the photosensitive composition by dissolving, emulsifying, or dispersing the inventive photosensitive composition into water or solvent to prepare a liquid containing the photosensitive composition, then coating directly the liquid on the support and drying the liquid thereby laminating the photosensitive layer on the support. The solvent of the liquid of photosensitive composition may be properly selected depending on the application; examples of the solvent include alcohols such as ethanol, methanol, n-propanol, isopropanol, n-butanol, sec-butanol, n-hexanol; ektones such as acetone, methyl ethyl ketone, methylisobutylketone, cyclohexanone, and diisobutylketone; esters such as ethyl acetate, butyl acetate, n-amyl acetate, methyl sulfate, ethyl propionate, dimethyl phthalate, ethyl benzoate, and methoxy propyl acetate; aromatic hydrocarbons such as toluene, xylene, benzene, and ethyl benzene; halogenated hydrocarbons such as carbon tetrachloride, trichloroethylene, chloroform, 1,1,1-trichloroetahne, methylene chloride, monochloro benzene; ethers such as tetrahydrofuran, diethylene ether, ethyleneglycol monomethyl ether, ethyleneglycol monoethyl ether, and l-methoxy-2-propanol; dimethyl formamide, dimethyl acetamide, dimethyl sulfoxide, and sulforane. These may be used alone or in combination. Further, a conventional surfactant may be added to the solvent. The process for coating the photosensitive composition may be properly selected depending on the application; for example, the solution of the photosensitive composition is directly coated on the support by means of spin coater, slit spin coater, roll coater, die coater, curtain coater, and the like. The drying conditions may be properly selected depending on the components in the composition, the ratios of the components, and the solvent; usually the temperature is 60 to 110 °C and the duration is 30 seconds to 15 minutes. [Protective Film] The protective film is provided to prevent the damages or smears on the photosensitive layer and to protect mechanically and chemically the photosensitive layer. The site of the protective layer in the photosensitive film may be properly selected depending on the application; usually the protective layer is provided on the photosensitive layer. The material of the protective film may be those exemplified with respect to the support set forth above, and also may be paper, polyethylene, paper laminated with polypropylene, or the like. Among these materials, polyethylene film and polypropylene film are preferable. The thickness of the protective film may be properly selected without particular limitations; preferably, the thickness is 5 to 100 μm, and more preferably is 8 to 30 μm. In the application of the protective film, preferably, the adhesive strength A between the photosensitive layer and the support, and the adhesive strength B between the photosensitive layer and the protective film represent the following relation: adhesive strength A > adhesive strength B. The combinations of the support and the protective film, i.e.

(support/ protective film), are exemplified by (polyethylene terephthalate/ polypropylene), (polyvinyl chloride/ cellophane), (polyimide/ polypropylene), and (polyethylene terephthalate/ polyethylene terephthalate). Further, the surface treatment of the support and/ or the protective film may result in the relation of the adhesive strength set forth above. The surface treatment of the support may be utilized for enhancing the adhesive strength with the photosensitive layer; examples of the surface treatment include deposition of under-coat layer, corona discharge treatment, flame treatment, UV-rays treatment, RF exposure treatment, glow discharge treatment, active plasma treatment, and laser beam treatment. The static friction coefficient between the support and the protective film is preferably 0.3 to 1.4, more preferably is 0.5 to 1.2. When the static friction coefficient is less than 0.3, winding displacement may generate in roll configuration due to excessively high slipperiness, and when the static friction coefficient is more than 1.4, winding of the material in a roll configuration tends to be difficult. Preferably, the photosensitive film is wound on a cylindrical winding core, and is stored in an elongated roll configuration. The length of the elongated 5 photosensitive film may be properly selected without particular limitations, for example the length is from 10 to 20000 meters. Further, the photosensitive film may be subjected to slit processing for easy handling in the usages, and may be provided as a roll configuration for every 100 to 1000 meters. Preferably, the photosensitive film is wound such that support exists at outer most side of the roll configuration. o Further, the photosensitive film may be slit into a sheet configuration. In the storage, preferably, a separator of moistureproof with desiccant in particular is provided at the end surface of the photosensitive film, and the package is performed by a material of lower moistureproof for preventing edge fusion. The protective film may be subjected to surface treatment in order to control 5 the adhesive property between the protective film and the photosensitive layer. The surface treatment is performed, for example, by providing an under-coat layer of polymer such as polyorganosiloxane, fluorinated polyolefin, polyfluoroethylene, and polyvinyl alcohol on the surface of the protective film. The under-coat layer may be formed by coating the liquid of the polymer on the surface of the protective film, o then drying the coating at 30 to 150 °C, in particular 50 to 120 °C for 1 to 30 minutes. In addition to the photosensitive layer, the support, and the protective film, other layers such as a peeling layer, adhesive layer, optical absorbing layer, and surface protective layer may be provided. Further, the cushioning layer, oxygen-gas barrier layer, peeling layer, optical 5 absorbing layer, surface-protecting layer and the like may be provided in addition to these photosensitive layer, support, and protective layer. The cushioning layer exhibits non-tackiness at ambient temperature, and may melt and flow while laminating in a heated and evacuated condition. The oxygen-gas barrier layer is typically a film of about 0.5 to 5 μm thick formed from polyvinyl alcohol. The photosensitive film in the present invention comprises a photosensitive layer of the laminated photosensitive composition according to the present invention that represents little tackiness of the resulting surface, proper laminating ability, and appropriate shelf stability, and may display superior chemical resistance, higher surface hardness, and sufficient thermal resistance. Accordingly, the photosensitive films in the present invention may be widely applied to, for example, printed wiring boards such as multilayer wiring boards and build-up wiring boards; display members such as color filters, column member, rib member, spacer, and partition member; permanent patterns such as holograms, micro machines, and proofs. In particular, the photosensitive films may be uniform in film thickness, therefore, the photosensitive films may be laminated on a substrate in highly fine and precise manner.

(Permanent Pattern and Process for Forming Permanent Pattern) The inventive permanent patterns may be produced by the inventive processes for forming permanent patterns. In the first aspect of the inventive processes for forming permanent patterns, the inventive photosensitive composition is coated on a surface of a substrate and dried to form a photosensitive layer, then the photosensitive layer is exposed and developed. In the second aspect of the inventive processes for forming permanent patterns, the inventive photosensitive film is laminated on a surface of a substrate under heating and/ or pressuring, then the photosensitive film is exposed and developed. The inventive permanent pattern will be apparent through the following explanations with respect to the inventive processes for forming permanent patterns. [Substrate] The substrate may be properly selected from commercially available materials, which may be of nonuniform surface or of highly smooth surface. Preferably, the substrate is plate-like; specifically, the substrate may be selected from the materials such as printed wiring boards e.g. copper-laminated plate, glass plates e.g. soda glass plate, synthetic resin films, paper, and metal plates. Among these, printed wiring boards are preferable, and more preferably are printed wiring boards 5 on which a wiring pattern is formed already, since micro devices such as semiconductors are made possible to be mounted in higher density on multi-layer wiring substrates or build-up wiring substrates. The substrate may be utilized, in the first aspect set forth above, on which the photosensitive layer of the photosensitive composition is laminated to form a o laminated body, in the second aspect, on which the photosensitive layer of the photosensitive film is overlapped and laminated to form a laminated body. Thus, exposing the photosensitive layer of the laminated body may harden the exposed region and may yield a permanent pattern through developing set forth later. - Laminated Body - 5 The process for forming a laminated body in the first aspect may be properly carried out depending on the application; preferably, the inventive photosensitive composition is coated on a substrate and dried to form a photosensitive layer in laminated condition. The way to coat and to dry may be properly selected depending on the application; for example, the liquid containing the photosensitive o composition is coated on the support by means of spin coater, slit spin coater, roll coater, die coater, curtain coater, and the like. The process for forming a laminated body in the second aspect may be properly carried out depending on the application; preferably, the inventive photosensitive film is laminated on a substrate under at least one of heating and 5 pressuring. When a protective film exists within the photosensitive film, preferably, the protective film is peeled away then the photosensitive film is laminated such that the photosensitive layer is overlapped on the substrate. The heating temperature and the pressure may be properly selected depending on the application; preferably the heating temperature is 70 to 130 °C, more preferably is 800 to 110 °C; preferably the pressure is 0.01 to 1.0 MPa, more preferably is 0.05 to 1.0 MPa. The apparatus for the heating and the pressuring may be properly selected depending on the application; examples of the apparatuses include a heat press, heat roll laminator (e.g., VP-II by Taisei-Laminator Co.), and vacuum laminator (e.g., MVLP500 by Meiki Co., Ltd.). [Exposing Step] In the exposing step, the photosensitive layer is exposed. The material to be exposed may be preferably selected depending on the application, as long as the material contains a photosensitive layer. Preferably, the exposing is carried out for a laminated body comprising a substrate on which a photosensitive layer or photosensitive film is formed. In exposing step, for example, exposure of the photosensitive layer may be performed through the support, cushioning layer, and oxygen-gas barrier layer; through the cushioning layer and oxygen-gas barrier layer after the support is peeled away; through the oxygen-gas barrier layer after the support and cushioning layer are peeled away; or the photosensitive layer may be exposed after the support, cushioning layer, and oxygen-gas barrier layer are peeled away. The way of the exposure may be properly selected depending on the application, and the exposure may be carried out by means of digital exposure, analog exposure, or the like. Preferably, the exposure is carried out by means of digital exposure. Preferably, the digital exposure is carried out such that control signals are produced based on pattern forming information, and the exposure is performed by means of laser beams modulated depending on the control signals. The unit of the digital exposure may be properly selected depending on the application; for example, the unit may be a laser source, or a laser modulator configured to modulate laser beams irradiated from the laser source based on pattern information. < Laser Modulator > The laser modulator may be properly selected depending on the application as long as capable of modulating laser beams. Preferably, the laser modulator comprises plural imaging portions. 5 Preferable examples of the laser modulator that comprises plural imaging portions are spatial light modulators. Specific examples of the spatial light modulator include a digital micromirror device (DMD), spatial light modulator of micro electro mechanical system type, PLZT element, and liquid crystal shatter; among these, the DMD is preferable. o Preferably, the laser modulator is equipped with a unit for generating pattern signals so as to produce controlling signals based on intended pattern information, thereby the laser modulator modulates laser beams based on control signals from the unit for generating pattern signals. The control signals may be digital signals.5 The laser modulator will be specifically explained with reference to figures in the following. DMD 50 is a mirror device that has lattice arrays of many micromirrors 62, e.g. 1024 x 768, on SRAM cell or memory cell 60 as shown in FIG. 1, wherein each of the micromirrors performs as an imaging portion. At the upper most portion of the o each imaging portion, micromirror 62 is supported by a pillar. A material having a higher reflectivity such as aluminum is vapor deposited on the surface of the micromirror. The reflectivity of the micromirrors 62 is 90 % or more; the array pitches in longitudinal and width directions are respectively 13.7 μm, for example. Further, SRAM cell 60 of a silicon gate CMOS produced by conventional 5 semiconductor memory producing processes is disposed just below each micromirror 62 through a pillar containing a hinge and yoke. The mirror device is entirely constructed as a monolithic body. When a digital signal is written into SRAM cell 60 of DMD 50, micromirror 62 supported by a pillar is inclined toward the substrate, on which DMD 50 is disposed, within ± alpha degrees e.g. 12 degrees around the diagonal as the rotating axis. FIG. 2A indicates the condition that micromirror 62 is inclined + alpha degrees at on state, FIG. 2B indicates the condition that micromirror 62 is inclined - alpha degrees at off state. As such, each incident laser beam B on DMD 50 is reflected 5 depending on each inclined direction of micromirrors 62 by controlling each inclined angle of micromirrors 62 in imaging portions of DMD 50 depending on pattern information as shown in FIG. 1. By the way, FIG. 1 exemplarily shows a magnified condition of DMD 50 partly in which micromirrors 62 are controlled at an angel of - alpha degrees or + o alpha degrees. Controller 302 (see FIG. 12) connected to DMD 50 carries out on-off controls of the respective micromirrors 62. An optical absorber (not shown) is disposed on the way of laser beam B reflected by micromirrors 62 at off state. Preferably, DMD 50 is slightly inclined in the condition that the shorter side presents a pre-determined angle, e.g. 0.1 to 5 degrees against the sub-scanning 5 direction. FIG. 3 A shows scanning traces of reflected laser image or exposing beam 53 by the respective micromirrors when DMD 50 is not inclined; FIG. 3B shows scanning traces of reflected laser image or exposing beam 53 by the respective micromirrors when DMD 50 is inclined. In DMD 50, many micromirrors, e.g. 1024, are disposed in the longer o direction to form one array, and many arrays, e.g. 756, are disposed in the shorter direction. Thus, by means of inclining DMD 50 as shown in FIG. 3B, the pitch Pi of scanning traces or lines of exposing beam 53 from each micromirror may be reduced than the pitch P₂ of scanning traces or lines of exposing beam 53 without inclining DMD 50, thereby the resolution may be improved remarkably. On the other hand, 5 the inclined angle of DMD 50 is small, therefore, the scanning direction W2 when DMD 50 is inclined and the scanning direction Wi when DMD 50 is not inclined are approximately the same. The process to accelerate the modulation rate of the laser modulator (hereinafter referring to as "high rate modulation") will be explained in the following. Preferably, the laser modulator is able to control any imaging portions of less than "n" disposed successively among the imaging portions depending on the pattern information ("n": an integer of 2 or more). Since there exist a limit in the 5 data processing rate of the laser modulator and the modulation rate per one line is defined with proportional to the utilized imaging portion number, the modulation rate per one line may be increased through only utilizing the imaging portions of less than "n" disposed successively. The high rate modulation will be explained with reference to figures in the o following. When laser beam B is irradiated from fiber array laser source 66 to DMD 50, the reflected laser beam, at the micromirrors of DMD 50 being on state, is imaged on photosensitive layer 150 by lens systems 54, 58. As such, the laser beam irradiated from the fiber array laser source is turned into on or off by the respective imaging 5 portions, and the photosensitive layer 150 is exposed in approximately the same number of imaging portion units or exposing areas 168 as the imaging portions utilized in DMD 50. In addition, when photosensitive layer 150 is conveyed with stage 152 at a constant rate, photosensitive layer 150 is sub-scanned to the direction opposite to the stage moving direction by scanner 162, thus exposed regions 170 of o band shape are formed correspondingly to the respective exposing heads 166. In this example, micromirrors are disposed on DMD 50 as 1024 arrays in the main-scanning direction and 768 arrays in sub-scanning direction as shown in FIGs. 4A and 4B. Among these micromirrors, a part of micromirrors, e.g. 1024 x 256, may be controlled and driven by controller 302 (see FIG. 12).5 In such control, the micromirror arrays disposed at the central area of DMD 50 may be employed as shown in FIG. 4A; alternatively, the micromirror arrays disposed at the edge portion of DMD 50 may be employed as shown in FIG. 4B. In addition, when micromirrors are partly damaged, the utilized micromirrors may be properly altered depending on the situations such that micromirrors with no damage are utilized. Since there exist a limit in the data processing rate of DMD 50 and the modulation rate per one line is defined with proportional to the utilized imaging portion number, partial utilization of micromirror arrays leads to higher modulation 5 rate per one line. Further, when exposing is carried out by moving continuously the exposing head relative to the exposing surface, the entire imaging portions are not necessarily required in the sub-scanning direction. When the sub-scanning of photosensitive layer 150 is completed by scanner 162, and the rear end of photosensitive layer 150 is detected by sensor 164, the stage o 152 returns to the original site at the most upstream of gate 160 along guide 158, and the stage 152 is moved again from upstream to downstream of gate 160 along guide 158 at a constant rate. For example, when 384 arrays are utilized among the 768 arrays of micromirrors, the modulation rate may be enhanced two times compared to utilizing5 all of 768 arrays; further, when 256 arrays are utilized among the 768 arrays of micromirrors, the modulation rate may be enhanced three times compared to utilizing all of 768 arrays As explained above, in accordance with the process for forming a permanent pattern according to the present invention, when DMD is provided with 1024 o micromirror arrays in the main-scanning direction and 768 micromirror arrays in the sub-scanning direction, controlling and driving of partial micromirror arrays may lead to higher modulation rate per one line compared to controlling and driving of entire micromirror arrays. In addition to the controlling and driving of partial micromirror arrays, 5 elongated DMD on which many micromirrors are disposed on a substrate in planar arrays may increase similarly the modulation rate when the each angle of reflected surface is changeable depending on the various controlling signals, and the substrate is longer in a specific direction than its perpendicular direction. Preferably, the exposing is performed while moving relatively the exposing laser and the thermosensitive layer; more preferably, the exposing is combined with the high rate modulation set forth before, thereby exposing may be carried out with higher rate in a shorter period. As shown in FIG. 5, photosensitive layer 150 may be exposed on the entire 5 surface by one scanning of scanner 162 in X direction; alternatively, as shown in FIGs. 6 A and 6B, photosensitive layer 150 may be exposed on the entire surface by repeated plural exposing such that photosensitive layer 150 is scanned in X direction by scanner 162, then the scanner 162 is moved one step in Y direction, followed by scanning in X direction. In this example, scanner 162 comprises eighteen exposing o heads 166; each exposing head comprises a laser source and the laser modulator. The exposure is performed on a partial region of the photosensitive layer, thereby the partial region is hardened, followed by un-hardened region other than the partial hardened region is removed in developing step as set forth later, thus a pattern is formed.5 A pattern forming apparatus comprising the laser modulator will be exemplarily explained with reference to figures in the following. The pattern forming apparatus comprising the laser modulator is equipped with flat stage 152 that absorbs and sustains the laminated body on the surface. On the upper surface of thick plate table 156 supported by four legs 154, two o guides 158 are disposed that extend along the stage moving direction. Stage 152 is disposed such that the elongated direction faces the stage moving direction, and supported by guide 158 in reciprocally movable manner. A driving device is equipped with the pattern forming apparatus (not shown) so as to drive stage 152 along guide 158. 5 At the middle of the table 156, gate 160 is provided such that the gate 160 strides the path of stage 152. The respective ends of gate 160 are fixed to both sides of table 156. Scanner 162 is provided at one side of gate 160, plural (e.g. two) detecting sensors 164 are provided at the opposite side of gate 160 in order to detect the front and rear ends of photosensitive layer 150. Scanner 162 and detecting sensor 164 are mounted on gate 160 respectively, and disposed stationarily above the path of stage 152. Scanner 162 and detecting sensor 164 are connected to a controller (not shown) that controls them. As shown in FIGs. 8 and 9B, scanner 162 comprises plural (e.g. fourteen) exposing heads 166 that are arrayed in substantially matrix of "m rows x n lines" (e.g. three x five). In this example, four exposing heads 166 are disposed at third line considering the width of photosensitive layer 150. The specific exposing head at "m" th row and "n" th line is expressed as exposing head 166mn hereinafter. The exposing area 168 by exposing head 166 is rectangular having the shorter side in the sub-scanning direction. Therefore, exposed areas 170 are formed on photosensitive layer 150 of a band shape that corresponds to the respective exposing heads 166 along with the movement of stage 152. The specific exposing area corresponding to the exposing head at "m" th row and "n" th line is expressed as exposing area 168mn hereinafter. As shown in FIGs. 9A and 9B, each of the exposing heads at each line is disposed with a space in the line direction so that exposed regions 170 of band shape are arranged without space in the perpendicular direction to the sub-scanning direction (space: (longer side of exposing area) x natural number; two times in this example). Therefore, the non-exposing area between exposing areas 168π and I6812 at the first raw can be exposed by exposing area I6821 of the second raw and exposing area I6831 of the third raw. Each of exposing heads I6611 to 166mn comprises a digital micromirror device (DMD) 50 (by US Texas Instruments Inc.) as a laser modulator or spatial light modulator that modulates the incident laser beam depending on the pattern information as shown in FIGs 10 and 11. Each DMD 50 is connected to controller

302 that comprises a data processing part and a mirror controlling part as shown in FIG. 12. The data processing part of controller 302 generates controlling signals to control and drive the respective micromirrors in the areas to be controlled for the respective exposing heads 166, based on the input pattern information. The area to be controlled will be explained later. The mirror driving-controlling part controls the reflective surface angle of each micromirror of DMD 50 per each exposing head 166 based on the control signals generated at the pattern information processing part. The control of the reflective surface angle will be explained later. 5 At the incident laser side of DMD 50, fiber array laser source 66 that is equipped with a laser irradiating part where irradiating ends or emitting sites of optical fibers are arranged in an array along the direction corresponding with the longer side of exposing area 168, lens system 67 that compensates the laser beam from fiber array laser source 66 and collects it on the DMD, and mirrors 69 that o reflect laser beam through lens system 67 toward DMD 50 are disposed in this order. FIG. 10 schematically shows lens system 67. Lens system 67 is comprised of collective lens 71 that collects laser beam B for illumination from fiber array laser source 66, rod-like optical integrator 72 (hereinafter, referring to as "rod integrator") inserted on the optical path of the laser5 passed through collective lens 71, and image lens 74 disposed in front of rod integrator 72 or the side of mirror 69, as shown FIG. 11. Collective lens 71, rod integrator 72, and image lens 74 make the laser beam irradiated from fiber array laser source 66 enter into DMD 50 as a luminous flux of approximately parallel beam with uniform intensity in the cross section. The shape and effect of the rod integrator o will be explained in detail later. Laser beam B irradiated from lens system 67 is reflected by mirror 69, and is irradiated to DMD 50 through a total internal reflection prism 70 (not shown in FIG. 10). At the reflecting side of DMD 50, imaging system 51 is disposed that images 5 laser beam B reflected by DMD 50 onto photosensitive layer 150. The imaging syste 51 is equipped with the first imaging system of lens systems 52, 54, the second imaging system of lens systems 57, 58, and microlens array 55 and aperture array 59 interposed between these imaging systems as shown in FIG. 11. Arranging two-dimensionally many microlenses 55a each corresponding to the respective imaging portions of DMD 50 forms microlens array 55. In this example, micromirrors of 1024 rows x 256 lines among 1024 rows x 768 lines of DMD 50 are driven, therefore, 1024 rows x 256 lines of microlenses are disposed correspondingly. The pitch of disposed microlenses 55a is 41 μm in both of raw and 5 line directions. Microlenses 55a have a focal length of 0.19 mm and a numerical aperture (NA) of 0.11 for example, and are formed of optical glass BK7. The shape of microlenses will be explained later. The beam diameter of laser beam B is 41 μm at the site of microlens 55a. Aperture array 59 is formed of many apertures 59a each corresponding to the o respective microlenses 55a of microlens array 55. The diameter of aperture 59a is 10 μm, for example. The first imaging system forms the image of DMD 50 on microlens array 55 as a three times magnified image. The second imaging system forms and projects the image through microlens array 55 on photosensitive layer 150 as a 1.6 times5 magnified image. Therefore, the image by DMD 50 is formed and projected on photosensitive layer 150 as a 4.8 times magnified image. By the way, prism pair 73 is installed between the second imaging system and photosensitive layer 150; through the operation to move up and down the prism pair 73, the image pint may be adjusted on the image forming material 150. In FIG. o 11, photosensitive layer 150 is fed to the direction of arrow F as sub-scanning. The imaging portions may be properly selected depending on the application provided that the imaging portions can receive the laser beam from the laser source or irradiating means and can output the laser beam; for example, the imaging portions are pixels when the permanent pattern formed by the process for forming a 5 permanent pattern according to the present invention is an image pattern, alternatively the imaging portions are micromirrors when the laser modulator contains a DMD. The number of imaging portions contained in the laser modulator may be properly selected depending on the application. The alignment of imaging portions in the laser modulator may be properly selected depending on the application; preferably, the imaging portions are arranged two dime sionally, more preferably are arranged into a lattice pattern. - Optical Irradiating Means or Laser Source - The optical irradiating means may be properly selected depending on the application; examples thereof include an extremely high pressure mercury lamp, xenon lamp, carhon arc lamp, halogen lamp, fluorescent tube, LED, semiconductor laser, and the other conventional laser source, and also combination of these means. Among these means, the means capable of irradiating two or more types of lights or laser beams is preferable. Examples of the light or laser beam irradiated from the optical irradiating means or laser source include UN-rays, visual light, X-ray, laser beam, and the like. Among these, laser beam is preferable, more preferably are those containing two or more types of laser beams (hereinafter, sometimes referring to as "combined laser"). The wavelength of the UV-rays and the visual light is preferably 300 to 1500 nm, more preferably is 320 to 800 nm, most preferably is 330 to 650 nm. The wavelength of the laser beam is preferably 200 to 1500 nm, more preferably is 30O to 800 nm, still more preferably is 330 to 500 nm, and most preferably is 395 to 415 nm. As for the means to irradiate the combined laser beams, such a means is preferably exemplified that comprises plural laser irradiating devices, a multimode optical fiber, and a collecting optical system that collect respective laser beams and connect them to a multimode optical fiber. The means to irradiate combined laser beams or the fiber array laser source will be explained with reference to figures in the following. Fiber array laser source 66 is equipped with plural (e.g. fourteen) laser modules 64 as shown in FIG. 27A. One end of each multimode optical fiber 30 is connected to each laser module 64. To the other end of each multimode optical fiber 30 is connected optical fiber 31 of which the core diameter is the same as that of multimode optical fiber 30 and of which the clad diameter is smaller than that of multimode optical fiber 30. As shown in FIG. 27B specifically, the ends of multimode optical fibers 31 at the opposite end of multimode optical fiber 30 are aligned as seven ends along the main scanning direction perpendicular to the 5 sub-scanning direction, and the seven ends are aligned as two rows, thereby laser output portion 68 is constructed. The laser output portion 68, formed of the ends of multimode optical fibers 31, is fixed by being interposed between two flat support plates 65 as shown in FIG. 27B. Preferably, a transparent protective plate such as a glass plate is disposed on o the output end surface of multimode optical fibers 31 in order to protect the output end surface. The output end surface of multimode optical fibers 31 tends to bear dust and to degrade due to its higher optical density; the protective plate set forth above may prevent the dust deposition on the end surface and may retard the degradation.5 In this example, in order to align optical fibers 31 having a lower clad diameter into an array without a space, multimode optical fiber 30 is stacked between two multimode optical fibers 30 that contact at the larger clad diameter, and the output end of optical fiber 31 connected to the stacked multimode optical fiber 30 is interposed between two output ends of optical fibers 31 connected to two o multimode optical fibers 30 that contact at the larger clad diameter. Such optical fibers may be produced by connecting concentrically optical fibers 31 having a length of 1 to 30 cm and a smaller clad diameter to the tip portions of laser beam output side of multimode optical fiber 30 having a larger clad diameter, for example, as shown in FIG. 28. Two optical fibers are connected such that the 5 input end surface of optical fiber 31 is fused to the output end surface of multimode optical fiber 30 so as to coincide the center axises of the two optical fibers. The diameter of core 31a of optical fiber 31 is the same as the diameter of core 30a of multimode optical fiber 30 as set forth above. Further, a shorter optical fiber produced by fusing an optical fiber having a smaller clad diameter to an optical fiber having a shorter length and a larger clad diameter may be connected to the output end of multimode optical fiber through a ferrule, optical connector or the like. The connection through a connector and the like in an attachable and detachable manner may bring about easy exchange of the output end portion when the optical fibers having a smaller clad diameter are partially damaged for example, resulting advantageously in lower maintenance cost for the exposing head. Optical fiber 31 is sometimes referred to as "output end portion" of multimode optical fiber 30. Multimode optical fiber 30 and optical fiber 31 may be any one of step index type optical fibers, grated index type optical fibers, and combined type optical fibers.

For example, step index type optical fibers produced by Mitsubishi Cable Industries, Ltd. are available. In one of the best mode according to the present invention, multimode optical fiber 30 and optical fiber 31 are step index type optical fibers; in the multimode optical fiber 30, clad diameter = 125 μm, core diameter = 50 μm, NA = 0.2, transmittance = 99.5 % or more (at coating on input end surface); and in the optical fiber 31, clad diameter = 60 μm, core diameter = 50 μm, NA = 0.2. Laser beams at infrared region typically increase the propagation loss while the clad diameter of optical fibers decreases. Accordingly, a proper clad diameter is defined usually depending on the wavelength region of the laser beam. However, the shorter is the w avelength, the less is the propagation loss; for example, in the laser beam of wavelength 405 nm irradiated from GaN semiconductor laser, even when the clad thickness (clad diameter - core diameter)/2 is made into about 1/2 of the clad thickness at which infrared beam of wavelength 800 nm is typically propagated, or made into about 1/4 of the clad thickness at which infrared beam of wavelength 1.5 μm for communication is typically propagated, the propagation loss does not increase significantly. Therefore, the clad diameter is possible to be as small as 60 μm. Needless to say, the clad diameter of optical fiber 31 should not be limited to 60 μm. The clad diameter of optical fiber utilized for conventional fiber array laser sources is 125 μm; the smaller is the clad diameter, the deeper is the focal depth; therefore, the clad diameter of the multimode optical fiber is preferably 80 μm or less, more preferably is 60 μm or less, still more preferably is 40 μm or less. On the other hand, since the core diameter is appropriately at least 3 to 4 μm, the clad diameter of 5 optical fiber 31 is preferably 10 μm or more. Laser module 64 is constructed from the combined laser source or the fiber array laser source as shown in FIG. 29. The combined laser source is constructed from plural (e.g. seven) multimode or single mode GaN semiconductor lasers LDI, LD2, LD3, LD4, LD5, LD6 and LD7 disposed and fixed on heat block 10, collimator o lenses 11, 12, 13, 14, 15, 16, and 17, one collecting lens 20, and one multimode optical fiber 30. Needless to say, the number of semiconductor lasers is not limited to seven. For example, with respect to the multimode optical fiber having clad diameter = 60 μm, core diameter = 50 μm, NA = 0.2, as much as twenty semiconductor lasers may be inputted, thus the number of optical fibers may be reduced while attaining the 5 necessary optical quantity of the exposing head. GaN semiconductor lasers LDI to LD7 have a common oscillating wavelength e.g.405 nm, and a common maximum output e.g. 100 mW as for multimode lasers and 30 mW as for single mode lasers. The GaN semiconductor lasers LDI to LD7 may be those having an oscillating wavelength of other than 405 o nm as long as within the wavelength of 350 to 450 nm. The combined laser source is housed into a box package 40 having an upper opening with other optical elements as shown in FIGs. 30 and 31. The package 40 is equipped with package lid 41 for shutting the opening. Introduction of sealing gas after evacuating procedure and shutting the opening of package 40 by means of 5 package lid 41 presents a closed space or sealed volume constructed by package 40 and package lid 41, and the combined laser source is disposed in a sealed condition. Base plate 42 is fixed on the bottom of package 40; the heat block 10, collective lens holder 45 to support collective lens 20, and fiber holder 46 to support the input end of multimode optical fiber 30 are mounted to the upper surface of the base plate 42. The output end of multimode optical fiber 30 is drawn out of the package from the aperture provided at the wall of package 40. Collimator lens holder 44 is attached to the side wall of heat block 10, and collimator lenses 11 to 17 are supported thereby. An aperture is provided at the 5 side wall of package 40, and wiring 47 that supplies driving power to GaN semiconductor lasers LDI to LD7 is directed through the aperture out of the package. In FIG. 31, only the GaN semiconductor laser LD7 is indicated with a reference mark among plural GaN semiconductor lasers, and only the collimator lens 17 is indicated with a reference number among plural collimators, in order not to o make the figure excessively complicated. FIG. 32 shows a front shape of attaching part for collimator lenses 11 to 17. Each of collimator lenses 11 to 17 is formed into a shape that a circle lens containing a non-spherical surface is cut into an elongated piece with parallel planes at the region containing the optical axis. The collimator lens with the elongated shape may be5 produced by a molding process. The collimator lenses 11 to 17 are closely disposed in the aligning direction of emitting points such that the elongated direction is perpendicular to the alignment of the emitting points of GaN semiconductor lasers LDI to LD7. On the other hand, as for GaN semiconductor lasers LDI to LD7, the o following laser may be employed that comprises an active layer having an emitting width of 2 μm and emits the respective laser beams Bl to B7 at a condition that the divergence angle is 10 degrees and 30 degrees for the parallel and perpendicular directions against the active layer. The GaN semiconductor lasers LDI to LD7 are disposed such that the emitting sites align as one line in parallel to the active layer. 5 Accordingly, laser beams Bl to B7 emitted from the respective emitting sites enter into the elongated collimator lenses 11 to 17 in a condition that the direction having a larger divergence angle coincides with the length direction of each collimator lens and the direction having a less divergence angle coincides with the width direction of each collimator lens. Namely, the width is 1.1 mm and the length is 4.6 mm with respect to respective collimator lenses 11 to 17, and the beam diameter is 0.9 mm in the horizontal direction and is 2.6 mm in the vertical direction with respect to laser beams Bl to B7 that enter into the collimator lenses. As for the respective collimator lenses 11 to 17, focal length fl = 3 mm, NA = 0.6, pitch of 5 disposed lenses = 1.25 mm. Collective lens 20 formed into a shape that a part of circle lens containing the optical axis and non-spherical surface is cut into an elongated piece with parallel planes and is arranged such that the elongated piece is longer in the direction of disposing collimator lenses 11 to 17 i.e. horizontal direction, and is shorter in the o perpendicular direction. As for the collective lens, focal length £2 = 23 mm, NA = 0.2. The collective lens 20 may be produced by molding a resin or an optical glass, for example. Further, since a high luminous fiber array laser source is employed that is arrayed at the output ends of optical fibers in the combined laser source for the 5 illumination means to illuminate the DMD, a pattern forming apparatus may be attained that exhibits a higher output and a deeper focal depth. In addition, the higher output of the respective fiber array laser sources may lead to less number of fiber array laser sources required to take a necessary output as well as a lower cost of the pattern forming apparatus.0 In addition, the clad diameter at the output ends of the optical fibers is smaller than the clad diameter at the input ends, therefore, the diameter at emitting sites is reduced still, resulting in higher luminance of the fiber array laser source. Consequently, pattern forming apparatuses with a deeper focal depth may be achieved. For example, a sufficient focal depth may be obtained even for the 5 extremely high resolution exposure such that the beam diameter is 1 μm or less and the resolution is 0.1 μm or less, thereby enabling rapid and precise exposure. Accordingly, the pattern forming apparatuses are appropriate for the exposure of thin film transistor (TFT) that requires high resolution. The illumination means is not limited to the fiber array laser source that is equipped with plural combined laser sources; for example, such a fiber array laser source may be employed that is equipped with one fiber laser source, and the fiber laser source is constructed by one arrayed-optical fiber that outputs a laser beam from one semiconductor laser having an emitting site. Further, as for the illumination means having plural emitting sites, such a laser array may be employed that comprises plural (e.g. seven) tip-like semiconductor lasers LDI to LD7 disposed on heat block 100 as shown in FIG. 33. In addition, multi cavity laser 110 is known that comprises plural (e.g. five) emitting sites 110a disposed in a certain direction as shown in FIG. 34A. In the multi cavity laser 110, the emitting sites can be arrayed with higher dimensional accuracy compared to arraying tip-like semiconductor lasers, thus laser beams emitted from the respective emitting sites can be easily combined. Preferably, the number of emitting sites 110a is five or less, since deflection tends to generate on multi cavity laser 110 at the laser production process when the number increases. Concerning the illumination means, the multi cavity laser 110 set forth above, or the multi cavity array disposed such that plural multi cavity lasers 110 are arrayed in the same direction as emitting sites 110a of each tip as shown in FIG. 34B may be employed for the laser source. The combined laser source is not limited to the types that combine plural laser beams emitted from plural tip-like semiconductor lasers. For example, such a combined laser source is available that comprises tip-like multi cavity laser 110 having plural (e.g. three) emitting sites 110a as shown in FIG. 21. The combined laser source is equipped with multi cavity laser 110, one multimode optical fiber 130, and collecting lens 120. The multi cavity laser 110 may be constructed from GaN laser diodes having an oscillating wavelength of 405 nm, for example. In the above noted construction, each laser beam B emitted from each of plural emitting sites 110a of multi cavity laser 110 is collected by collective lens 120 and enters into core 130a of multimode optical fiber 130. The laser beams entered into core 130a propagate inside the optical fiber and combine as one laser beam then output from the optical fiber. The connection efficiency of laser beam B to multimode optical fiber 130 may be enhanced by way of arraying plural emitting sites 110a of multi cavity laser 110 into a width that is approximately the same as the core diameter of multimode 5 optical fiber 130, and employing a convex lens having a focal length of approximately the same as the core diameter of multimode optical fiber 130, and also employing a rod lens that collimates the output beam from multi cavity laser 110 at only within the surface perpendicular to the active layer. In addition, as shown in FIG. 35, a combined laser source may be employed o that is equipped with laser array 140 formed by arraying on heat block 111 plural (e.g. nine) multi cavity lasers 110 with an identical space between them by employing multi cavity lasers 110 equipped with plural (e.g. three) emitting sites. The plural multi cavity lasers 110 are arrayed and fixed in the same direction as emitting sites 110a of the respective tips.5 The combined laser source is equipped with laser array 140, plural lens arrays 114 that are disposed correspondingly to the respective multi cavity lasers 110, one rod lens 113 that is disposed between laser array 140 and plural lens arrays 114, one multimode optical fiber 130, and collective lens 120. Lens arrays 114 are equipped with plural micro lenses each corresponding to emitting sites of multi o cavity lasers 110. In the above noted construction, laser beams B that are emitted from plural emitting sites 110a of plural multi cavity lasers 110 are collected in a certain direction by rod lens 113, then are paralleled by the respective microlenses of microlens arrays 114. The paralleled laser beams L are collected by collective lens 120 and are 5 inputted into core 130a of multimode optical fiber 130. The laser beams entered into core 130a propagate inside the optical fiber and combine as one beam then output from the optical fiber. Another combined laser source will be exemplified in the following. In the combined laser source, heat block 182 having a cross section of L-shape in the optical axis direction is installed on rectangular heat block 180 as shown in FIGs. 36A and 36B, and a housing space is formed between the two heat blocks. On the upper surface of L-shape heat block 182, plural (e.g. two) multi cavity lasers 110, in which plural (e.g. five) emitting sites are arrayed, are disposed and fixed respectively with 5 an identical space between them in the same direction as the aligning direction of respective tip-like emitting sites. A concave portion is provided on the rectangular heat block 180; plural (e.g. two) multi cavity lasers 110 are disposed on the upper surface of heat block 180, plural emitting sites (e.g. five) are arrayed in each multi cavity laser 110, and the o emitting sites are situated at the same vertical surface as the surface where are situated the emitting sites of the laser tip disposed on the heat block 182. At the laser beam output side of multi cavity laser 110, coUimate lens arrays 184 are disposed such that coUimate lenses are arrayed correspondingly with the emitting sites 110a of the respective tips. In the coUimate lens arrays 184, the length 5 direction of each coUimate lens coincides with the direction at which the laser beam represents a wider divergence angle or a fast axis direction, and the width direction of each coUimate lens coincides with the direction at which the laser beam represents a less divergence angle or a slow axis direction. The integration by arraying the coUimate lenses may increase the space efficiency of laser beam, thus the output o power of the combined laser source may be enhanced, and also the number of parts may be reduced, resulting advantageously in lower production cost. At the laser beam output side of coUimate lens arrays 184, disposed are one multimode optical fiber 130 and collective lens 120 that collects laser beams at the input end of multimode optical fiber 130 and combines them.5 In the above noted construction, the respective laser beams B emitted from the respective emitting sites 110a of plural multi cavity lasers 110 disposed on laser blocks 180, 182 are paralleled by coUimate lens array, are collected by collective lens 120, then enter into core 130a of multimode optical fiber 130. The laser beams entered into core 130a propagate inside the optical fiber and combine as one beam then output from the optical fiber. The combined laser source may be made into a higher output power source by multiple arrangement of the multi cavity lasers and the array of coUimate lenses in particular. The combined laser source allows to construct a fiber array laser source and a bundle fiber laser source, thus is appropriate for the fiber laser source to construct the laser source of the pattern forming apparatus in the present invention. By the way, a laser module may be constructed by housing the respective combined laser sources into a casing, and drawing out the output end of multimode optical fiber 130. In the explanations set forth above, the higher luminance of fiber array laser source is exemplified that the output end of the multimode optical fiber of the combined laser source is connected to another optical fiber that has the same core diameter as that of the multimode optical fiber and a clad diameter smaller than that of the multimode optical fiber; alternatively a multimode optical fiber having a clad diameter of 125 μm, 80 μm, 60 μm or the like may be utilized without connecting another optical fiber at the output end, for example. The process for forming a permanent pattern according to the present invention will be explained further. As shown in FIGs. 29 and 35, in each exposing head 166 of scanner 162, the respective laser beams Bl, B2, B3, B4, B5, B6, and B7, emitted from GaN semiconductor lasers LDI to LD 7 that constitute the combined laser source of fiber array laser source 66, are paralleled by the corresponding collimator lenses 11 to 17. The paralleled laser beams Bl to B7 are collected by collective lens 20, and converge at the input end surface of core 30a of multimode optical fiber 30. In this example, the collective optical system is constructed from collimator lenses 11 to 17 and collective lens 20, and the combined optical system is constructed from the collective optical system and multimode optical fiber 30. Namely, laser beams Bl to B7, collected by collective lens 20, enter into core 30a of multimode optical fiber 30 and propagate inside the optical fiber, combine into one laser beam B, then output from optical fiber 31 that is connected at the output end of multimode optical fiber 30. In each laser module, when the coupling efficiency of laser beams Bl to B7 with multimode optical fiber 30 is 0.85 and each output of GaN semiconductor lasers LDI to LD7 is 30 mW, each optical fiber disposed in an array can take combined laser beam B of output 180 mW (= 30 mW x 0.85 x 7). Accordingly, the output is about 1 W (= 180 mW x 6) at laser emitting portion 68 of the array of six optical fibers 31. Laser emitting portions 68 of fiber array source 66 are arrayed such that the higher luminous emitting sites are aligned along the main scanning direction. The conventional fiber laser source that connects laser beam from one semiconductor laser to one optical fiber is of lower output, therefore, a desirable output cannot be attained unless many lasers are arrayed; whereas the combined laser source of lower number (e.g. one) array can produce the desirable output since the combined laser source may generate a higher output. For example, in the conventional fiber where one semiconductor laser and one optical fiber are connected, a semiconductor laser of about 30 mW output is usually employed, and a multimode optical fiber that has a core diameter of 50 μm, a clad diameter of 125 μm, and a numerical aperture of 0.2 is employed as the optical fiber. Therefore, in order to take an output of about 1 W (Watt), 48 (8 x 6) multimode optical fibers are necessary; since the area of emitting region is 0.62 mm²

(0.675 mm x 0.925 mm), the luminance at laser emitting portion 68 is 1.6 x 10⁶ (W/m²), and the luminance per one optical fiber is 3.2 x 10⁶ (W/m²). On the contrary, when the laser emitting means is one capable of emitting the combined laser, six multimode optical fibers can produce the output of about 1 W. Since the area of the emitting region in laser emitting portion 68 is 0.0081 mm² (0.325 mm x 0.025 mm), the luminance at laser emitting portion 68 is 123 x 10⁶ (W/m²), which corresponds to about 80 times the luminance of conventional means. The luminance per one optical fiber is 90 x 10⁶ (W/m²), which corresponds to about 28 times the luminance of conventional means. The difference of focal depth between the conventional exposing head and the exposing head in the present invention wUl be explained with reference to FIGs. 37A and 37B. For example, the diameter of exposing head is 0.675 mm in the sub-scanning direction of the emitting region of the bundle-like fiber laser source, 5 and the diameter of exposing head is 0.025 mm in the sub-scanning direction of ttie emitting region of the fiber array laser source. As shown in FIG. 37A, in the conventional exposing head, the emitting region of illuminating means or bundle-like fiber laser source 1 is larger, therefore, the angle of laser bundle that enters into DMD3 is larger, resulting in larger angle of laser bundle that enters into o scanning surface 5. Therefore, the beam diameter tends to increase in the collecting direction, resulting in a deviation in focus direction. On the other hand, as shown in FIG. 37B, the exposing head of the pattern forming apparatus in the present invention has a smaller diameter of the emitting region of fiber array laser source 66 in the sub-scanning direction, therefore, the angle5 of laser bundle is smaller that enters into DMD50 through lens system 67, resulting in lower angle of laser bundle that enters into scanning surface 56, i.e. larger focal depth. In this example, the diameter of the emitting region is about 30 times the diameter of prior art in the sub-scanning direction, thus the focal depth approximately corresponding to the limited diffraction may be obtained, which is appropriate for o the exposing at extremely small spots. The effect on the focal depth is more significant as the optical quantity required at the exposing head comes to larger. In this example, the size of one imaging portion projected on the exposing surface is 10 μm x 10 μm. The DMD is a spatial light modulator of reflected type; in FIGs. 37-A and 37B, it is shown as developed views to explain the optical relation. 5 The pattern information corresponding to the exposing pattern is inputted into a controller (not shown) connected to DMD50, and is memorized once to a flame memory within the controller. The pattern information is the data that expresses the concentration of each imaging portion that constitutes the pixels by means of two-values i.e. presence or absence of the dot recording. Stage 152 that absorbs the photosensitive fUm having photosensitive layer 150 on the surface is conveyed from upstream to downstream of gate 160 along guide 158 at a constant velocity by a driving device (not shown). When the tip of photosensitive layer 150 is detected by detecting sensor 164 installed at gate 160 while stage 152 passes under gate 160, the pattern information memorized at the flame memory is read plural lines by plural lines sequentially, and controlling signals yield for each exposing head 166 based on the pattern information read by the data processing portion. Then, each micromirror of DMD50 is subjected to on-off control for each exposing head 166 based on the yielded controlling signals. When a laser beam is irradiated from fiber array laser source 66 onto DMD50, the laser beam reflected by the micromirror of DMD50 at on-condition is imaged on exposed surface 56 of photosensitive layer 150 by means of lens systems 54, 58. As such, the laser beams emitted from fiber array laser source 66 are subjected to on-off control for each imaging portion, and photosensitive layer 150 is exposed by imaging portions or exposing area 168 of which the number is approximately the same as that of imaging portions employed in DMD50. Further, through moving the photosensitive layer 150 at a constant velocity along with stage 152, photosensitive layer 150 is subjected to sub-scanning in the direction opposite to the stage moving direction by means of scanner 162, and band-like exposed region 170 is formed for each exposing head 166. The exposure is preferably performed by means of the modulated laser beams after transmitting through a microlens array, and also an aperture array, optical imaging system, or the like. < Microlens Array > The microlens array may be properly selected depending on the application, provided that microlenses have a non-spherical surface capable of compensating the aberration due to distortion or strain at irradiating surface of the imaging portion; for example, preferable are the microlens array that has a non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portions, and the microlens array that has an aperture configuration of the plural microlenses capable of substantially shielding incident light other than the modulated laser beam from the laser modulator. The non-spherical surface may be properly selected depending on the 5 application; preferably, the non-spherical surface is a toric surface, for example. The microlens array, aperture array, imaging system set forth above will be explained with reference to figures. FIG. 13A shows an exposing head that is equipped with DMD 50, laser source 144 to irradiate laser beam onto DMD 50, lens systems or imaging optical o systems 454 and 458 that magnif and image the laser beam reflected by DMD 50, microlens array 472 that arranges many microlenses 474 corresponding to the respective imaging portions of DMD 50, an aperture array that aligns many apertures 478 corresponding to the respective microlenses of microlens array 472, and lens systems or imaging systems 480 and 482 that image laser beam through the apertures5 onto exposed surface 56. FIG. 14 shows the flatness data as to the reflective surface of micromirrors 62 of DMD 50. In FIG. 14, contour lines express respectively the same heights of the reflective surface; the pitch of the contour lines is five nano meters. In FIG. 14, X direction and Y direction are two diagonal directions of micromirror 62, the o micromirror 62 rotates around the rotation axis extending in Y direction. FIGs. 15A and 15B show the height displacements of micromirrors 62 along the X and Y directions respectively. As shown in FIG. 14, FIGs. 15A and 15B, there exist strains on the reflective surface of micromirror 62, the strains of one diagonal direction (Y direction) is larger 5 than another diagonal direction (X direction) at the central region of the mirror in particular. Accordingly, a problem may be induced that the shape is distorted at the site that collects laser beam B by microlenses 55a of microlens array 55. In' order to prevent such a problem, microlenses 55a of microlens array 55 are of special shape that is different from the prior art as explained later. FIGs. 16A and 16B show the front shape and side shape of the entire microlens array 55 in detail. In FIGs. 16A and 16B, various parts of the microlens array are indicated as the unit of mm (millimeter). In the process for forming a permanent pattern according to the present invention, micromirrors of 1024 rows x 256 lines of DMD 50 are driven as explained above; microlens arrays 55 are correspondingly constructed as 1024 arrays in length direction and 256 arrays in width direction. In FIG. 16 A, the site of each microlens is expressed as "j" th line and "k" th row. FIGs. 17A and 17B show respectively the front shape and side shape of one microlens 55a of microlens array 55. FIG. 17A shows also the contour lines of microlens 55a. The end surface of each microlens 55a of irradiating side is of non-spherical shape to compensate the strain aberration of reflective surface of micromdrrors 62. Specifically, microlens 55a is a toric lens; the curvature radius of optical X direction Rx is - 0.125 mm, and the curvature radius of optical Y direction Ry is - 0.1 mm. Accordingly, the collecting condition of laser beam B within the cross section parallel to the X and Y directions are approximately as shown in FIGs. 18A and 18B respectively. Namely, comparing the X and Y directions, the curvature radius of microlens 55a is shorter and the focal length is also shorter in Y direction. FIGs. 19A, 19B, 19C, and 19D show the simulations of beam diameter near the focal point of microlens 55a in the above noted shape by means of a computer. For the reference, FIGs. 20A, 20B, 20C, and 20D show the similar simulations for microlens of Rx = Ry = - 0.1 mm. The values of "z" in the figures are expressed as the evaluation sites in the focus direction of microlens 55a by the distance from the beam irradiating surface of microlens 55a. The surface shape of microlens 55a in the simulation may be calculated by the following equation. C _χ ² X ²+C ² Y ² Z = ^y 1 +S Q R T ( 1 - C x ² X ² - C y ² Y ²) In the above equation, Cx means the curva ure (= 1/Rx) in X direction, Cy means the curvature (= 1/Ry) in Y direction, X means the distance from optical axis O in X direction, and Y means the distance from optical axis O in Y direction. From the comparison of FIGs. 19A to 19D, and FIGs. 20A to 20D, it is 5 apparent in the process for forming a permanent pattern according to the present invention that the employment of the toric lens as the microlens 55a that has a shorter focal length in the cross section parallel to direction than the focal length in the cross section parallel to X direction may reduce; the strain of the beam shape near the collecting site. Accordingly, images can be exposed on photosensitive layer 150

1 o with more clearness and without strain. In addition, it is apparent that the inventive mode shown in FIGs. 19A to 19D may bring about a wider region with smaller beam diameter, i.e. longer focal depth. By the way, when the larger or smaller strain or distortion at the central region appears at the central region of micromirroi: 62 inversely with those set forth L 5 above, the employment of microlenses that has a s_horter focal length in the cross section parallel to X direction than the focal length in the cross section parallel to Y direction may make possible to expose images on photosensitive layer 150 with more clearness and without distortion. Aperture arrays 59 disposed near the collecting site of microlens array 55 are

2 o constructed such that each aperture 59a receives only the laser beam through the corresponding microlens 55a. Namely, aperture array 59 may afford the respective apertures 59a with the insurance that the light incidence from the adjacent apertures 55a may be prevented and the extinction ratio may be enhanced. Essentially, smaller diameter of apertures 59a provided for the above noted 25 purpose may afford the effect to reduce the strain of beam shape at the collecting site of microlens 55a. However, such a construction inevitably increases the optical quantity interrupted by the aperture array 59, resulting in lower efficiency of optical quantity. • On the contrary, the non-spherical shape of microlenses 55a does not bring about the light interruption, thus leading to maintain the higher efficiency of optical quantity. In the pattern forming process explained above, microlens 55a of toric lens is applied that has different curvature radiuses in X and Y directions that respectively correspond to two diagonal directions of micromirror 62; alternatively, another 5 microlens 55a' of toric lens may be applied that has different curvature radiuses in XX and YY directions that respectively correspond to two side directions of rectangular micromirror 62, as shown in FIGs. 38A and 38B that exhibit the front and side shapes with contour lines. In the pattern forming process according to the present invention, the o microlenses 55a may be non-spherical shape of secondary or higher order such as fourth or sixth. The employment of higher order non-spherical surface may lead to higher accuracy of beam shape. In addition, such lens configuration is available that has the same curvature radiuses in X and Y directions corresponding to the distortion of reflective surface of micromirrors 62. Such lens configuration will be5 discussed in detail. The microlens 55a", of which the front shape and the side shape are shown in FIGs. 39 A and 39B respectively, has the same curvature radiuses in X and Y directions, and the curvature radiuses are designed such that the curvature Cy of spherical lens is compensated depending on the distance h^/ from the lens center. o Namely, the configuration of spherical lens of microlens 55a" is designed in terms of lens height 'z' (height of curved lens surface in optical axis direction) based on the following equation (2), for example. C _yh² Z = — ^~ 1 +S Q R T ( 1 - C_y ²h²) The relation between the lens height 'z' and the distance 'h' is expressed in5 FIG. 40 in the case that the curvature Cy = 1/0.1 mm. Then, the curvature of the spherical lens is compensated depending on the distance 'h' from the lens center based on the following equation (3), thereby the lens configuration of microlens 55a" is designed. C ² h ² Z = —. — — + a h ⁴ + b h ⁶ 1 +S Q R T ( 1 - C _y ² h ²) In equations (2) and (3), the respective Z mean the same concept; in equation

(3), the curvature Cy is compensated using the fourth coefficient 'a' and sixth coefficient 'b'. The relation between the lens height 'z' and the distance 'h' is expressed in FIG. 41 in the case that the curvature Cy = 1/0.1 mm, the fourth coefficient 'a' = 1.2 x 10³, and the sixth coefficient 'b' = 5.5 x 10⁷. Further, in the mode set forth above, each microlens 55a of microlens array

55 is non-spherical so as to compensate the aberration due to the distortion of reflective surface of micromirror 62; alternatively, substantially the same effect may be derived by providing each microlens of the microlens array with the distribution of refractive index so as to compensate the aberration due to the distortion of reflective surface of micromirror 62. FIGs. 22A and 22B show exemplarily such a microlens 155a. FIGs. 22A and

22B respectively show the front shape and side shape of microlens 155a. The entire shape of microlens 155a is a planar plate as shown in FIGs. 22A and 22B. The X and

Y directions in FIGs. 22A and 22B mean the same as set forth above. FIGs. 23A and 23B schematically show the condition to collect laser beam B by microlens 155a in the cross section parallel with X and Y directions respectively.

The microlens 155a exhibits a refractive index distribution that the refractive index increases gradually from the optical axis O to outward direction; the broken lines in

FIGs. 23A and 23B indicate the positions where the refractive index decreases a certain level from that of optical axis O. As shown in FIGs. 23A and 23B, comparing the cross section parallel to the X direction and the cross section parallel to the Y direction, the latter represents a rapid change in the refractive index distribution, and shorter focal length. Thus, the microlens array having such a refractive index distribution may provide the sirrύlar effect as the microlens array 55 set forth above. In addition, the microlens having a non-spherical surface as shown in FIGs.

17A, 17B, 18A and 18B may be provided with such a refractive index distribution, and both of the surface shape and the refractive index distribution may compensate the aberration due to distortion of the reflective surface of micromirror 62. Another microlens array will be exemplarily discussed with reference to figures. 5 The exemplary microlens array the microlens array has an aperture configuration of the plural microlenses capable of substantially shielding incident light other than the modulated laser beam from the laser modulator, as shown in FIG. 42. As discussed before with reference to FIGs. 14 and 15A and 15B, distortions o exist on the reflective surface of micromirror 62 in DMD50, and the distortion level tends to gradually increase from the central portion toward the peripheral portions of micromirror 62. Further, the distortion level at the peripheral portions is larger in one diagonal direction e.g. Y direction of micromirror 62 compared to in the other diagonal direction e.g. X direction, and the tendency explained above is more 5 significant in Y direction. The exemplary microlens array is prepared to address such problems. Each of the microlens 255a of the microlens array 255 has a circular aperture configuration; therefore, the laser beam reflected or transmitted at the periphery portions of the micromirror 62 where the distortion level is relatively large, particularly the laser 0 beam B reflected at the four corners cannot be collected by microlens 255a, thus the distortion of laser beam B may be prevented at the collecting site. Accordingly, highly fine and precise images may be exposed on a photosensitive layer with reducing distortions. Additionally, in the microlens array 255, shielding mask 255c is prepared at 5 the back side of transparent members 255b, which are usually formed monolithically with microlenses 255a, that sustains microlenses 255a; namely shielding mask 255c is provided such that outer regions of plural microlens apertures are covered at the opposite side of the plural microlenses 255a as shown in FIG.42. The shielding mask 255c can surely reduce the distortion of collected laser beam B, since the laser beam reflected or transmitted at the periphery portions of the micromirror 62, particularly the laser beam B reflected at the four corners is absorbed or interrupted by the shielding mask 255c. The aperture configuration of the microlens is not limited to circular in the microlens array 255, but other aperture configurations are applicable as microlens 455a with elliptic aperture configuration shown in FIG. 43, microlens 555a with polygonal aperture configuration e.g. rectangular in FIG. 44, and the like. By the way, microlenses 455a or 555a is of the configuration that symmetrical lens is cut into circular or polygonal shape, thus microlenses 455a or 555a may exhibit light-collecting performance similarly to conventional symmetrical spherical lenses. Additionally, the aperture configurations shown in FIGs. 45A, 45B, and 45C are applicable in the present invention. Microlens array 655 shown in FIG.45A is constructed such that plural microlenses 655a are disposed adjacently at the side of transparent member 655b from where laser beam B outputs, and mask 655c is disposed at the side of transparent member 655b to where laser beam inputs. By the way, mask 255c is provided at the outer region of the lens aperture in FIG. 42, whereas mask 655c is provided at the inner region of the lens aperture in FIG. 45 A. Microlens array 755 shown in FIG. 45B is constructed such that plural microlenses 755a are disposed adjacently at the side of transparent member 755b from where laser beam B outputs, and mask 755c is disposed between the microlenses 755a. Microlens array 855 shown in FIG. 45C is constructed such that plural microlenses 855a are disposed adjacently at the side of transparent member 855b from where laser beam B outputs, and mask 855c is disposed at the peripheral portion of each microlens 855a. AU of the exemplary masks 655c, 755c, and 855c have a circular aperture similarly to mask 255c, thereby the aperture of each microlens is defined to be circular. The aperture configuration of plural microlenses, wherein the mask substantially shields incident light other than from micromirrors 62 of DMD50 as shown in microlenses 255a, 455a, 555a, 655a, and 755a, may be combined with non-spherical lenses capable of compensating the aberration due to distortion of micromirror 62 as microlens 55a shown in FIGs. 17A and 17B, or lenses having a refractive index distribution capable of compensating the aberration as shown in 5 FIGs. 22 A and 22B; thereby the effect to prevent distortion of exposed images due to distortion of reflective surface of micromirror 62 may be enhanced synergistica-lly. Particularly, in the construction that mask 855c is provided on the lens surface of microlens 855a as shown in FIG. 45C, when microlens 855a have a non-spherical surface or a refractive index distribution and also the imaging site of o the first imaging system is determined at the lens surface of microlens 855a as lens systems 52 and 54 shown in FIG. 11, the optical efficiency may be higher in particular, thus photosensitive layer 150 may be exposed with more intense laser beam. Namely, although the laser beam refracts such that the stray light due to the reflective surface of micromirror 62 focuses at the imaging site by action of the first 5 imaging system, mask 855c provided at appropriate site does not shield light other than the stray light, thereby the optical efficiency may be enhanced remarkably. In the respective microlens array set forth above, the aberration due to strain of reflective surface of micromirror 62 in DMD 50 is compensated; similarly, in- the pattern forming process according to the present invention that employs a spatial o light modulator other than DMD, the possible aberration due to strain may be compensated and the strain or distortion of beam shape may be prevented when the strain or distortion appears at the surface of imaging portion of the spatial ligh modulator. The imaging optical system set forth above will be explained in the 5 following. In the exposing head, when laser beam is irradiated from the laser source 144, the cross section of luminous flux reflected to on-direction by DMD 50 is magnified several times, e.g. two times, by lens systems 454, 458. The magnified laser beam is collected by each microlens of microlens array 472 correspondingly with each imaging portion of DMD 50, then passes through the corresponding apertures of aperture array 476. The laser beam passed through the aperture is imaged on exposed surface 56 by lens systems 480, 482. In the imaging optical system, the laser beam reflected by DMD 50 is 5 magnified into several times by magnifying lenses 454, 458, and is projected onto exposed surface 56, therefore, the entire image region is enlarged. When microlens array 472 and aperture array 476 are not disposed, one drawing size or spot size of each beam spot BS projected on exposed surface 56 is enlarged depending on the size of exposed area 468, thus MTF (modulation transfer function) property that is a o measure of sharpness at exposing area 468 is decreased, as shown in FIG. 13B. On the other hand, when microlens array 472 and aperture array 476 are disposed, the laser beam reflected by DMD 50 is collected correspondingly with each imaging portion of DMD 50 by each microlens of microlens array 472. Thereby, the spot size of each beam spot BS may be reduced into the desired size, e.g. 10 μm x 10 5 μm, even when the exposing area is magnified, as shown in FIG. 13C, and the decrease of MFT property may be prevented and the exposure may be carried out with higher accuracy. By the way, inclination of exposing area 468 is caused by the DMD 50 that is disposed with inclination in order to eliminate the spaces between imaging portions. o Further, even when bean thickening exists due to aberration of microlenses, the beam shape may be arranged by the aperture array so as to form spots on exposed surface 56 with a constant size, and the crosstalk between the adjacent imaging portions may be prevented by passing the beam through the aperture array provided correspondingly to each imaging portion.5 In addition, employment of higher luminance laser source as laser source 144 may lead to prevention of partial entrance of luminous flux from adjacent imaging portions, since the angle of incident luminous flux is narrowed that enters into each microlens of microlens array 472 from lens 458; namely, higher extinction ratio may be achieved. < Other Optical System > In the process for forming a permanent pattern according to the present invention, the other optical system may be combined that is properly selected from conventional systems, for example, an optical system to compensate the optical 5 quantity distribution may be employed additionally. The optical system to compensate the optical quantity distribution alters the luminous flux width at each output site such that the ratio of the luminous flux width at the periphery region to the luminous flux width at the central region near the optical axis is higher in the output side than the input side, thus the optical o quantity distribution at the exposed surface is compensated to be approximately constant when the parallel luminous flux from the laser source is irradiated to DMD. The optical system to compensate the optical quantity distribution will be explained with reference to figures in the following. Initially, the optical system will be explained as for the case that the entire 5 luminous flux widths HO and HI are the same between the input luminous flux and the output luminous flux, as shown in FIG. 24A. The portions denoted by reference numbers 51, 52 in FIG. 24A indicate imaginarily the input surface and output surface of the optical system to compensate the optical quantity distribution. In the optical system to compensate the optical quantity distribution, it is o assumed that the luminous flux width hO of the luminous flux entered at central region near the optical axis Zl and luminous flux width hi of the luminous flux entered at peripheral region are the same (hO = hi). The optical system to compensate the optical quantity distribution affects the laser beam that has the same luminous fluxes hO, hi at the input side, and acts to magnify the luminous flux width5 hO for the input luminous flux at the central region, and acts to reduce the luminous flux width hi for the input luminous flux at the periphery region conversely. Namely, the optical system affects the output luminous flux width hlO at the central region and the output luminous flux width hll at the periphery region to turn into hll < hlO. In other words concerning the ratio of luminous flux width, (output luminous flux width at periphery region) / (output luminous flux width at central region) is smaller than the ratio of input, namely [hll/hlO] is smaller than (hl/hO = 1) or (hll/hlO < 1). Owing to altering the luminous flux width, the luminous flux at the central 5 region representing higher optical quantity may be supplied to the periphery region where the optical quantity is insufficient; thereby the optical quantity distribution is approximately uniformed at the exposed surface without decreasing the utilization efficiency. The level for uniformity is controlled such that the nonunif ormity of optical quantity is 30 % or less in the effective region for example, preferably is 20 %o or less. When the luminous flux width is entirely altered for the input side and the output side, the operation and effect due to the optical system to compensate the optical quantity distribution are similar to those shown in FIGs. 24A, 24B, and 24C. FIG. 24B shows the case that the entire optical flux bundle HO is reduced and 5 outputted as optical flux bundle H2 (HO > H2). In such a case also, the optical system to compensate the optical quantity distribution tends to process the laser beam, in which luminous flux width hO is the same as hi at input side, into that the luminous flux width hlO at the central region is larger than the spherical region and the luminous flux width hll is smaller than the central region in the output side. o Considering the reduction ratio of the luminous flux, the optical system affects to decrease the reduction ratio of input luminous flux at the central region compared to the peripheral region, and affects to increase the reduction ratio of input luminous flux at the peripheral region compared to the central region. In the case also, (output luminous flux width at periphery region) / (output luminous flux width at 5 central region) is smaller than the ratio of input, namely [Hll/HlO] is smaller than (hl/hO = 1) or (hll/hlO < 1). FIG. 24C explains the case that the entire luminous flux width HO at input side is magnified and output into width H3 (HO < H3). In such a case also, the optical system to compensate the optical quantity distribution tends to process the laser beam, in which luminous flux width hO is the same as hi at input side, into that the luminous flux width hlO at the central region is larger than the spherical region and the luminous flux width hll is smaller than the central region in the output side. Considering the magnification ratio of the luminous flux, the optical system affects to 5 increase the magnification ratio of input luminous flux at the central region compared to the peripheral region, and affects to decrease the magnification ratio of input luminous flux at the peripheral region compared to the central region. In the case also, (output luminous flux width at periphery region) / (output luminous flux width at central region) is smaller than the ratio of input, namely [H11/H10] is o smaller than (hl/hO = 1) or (hll/hlO < 1). As such, the optical system to compensate the optical quantity distribution alters the luminous flux width at each input site, and lowers the ratio (output luminous flux width at periphery region) / (output luminous flux width at central region) at output side compared to the input side; therefore, the laser beam having 5 the same luminous flux turns into the laser beam at output side that the luminous flux width at the central region is larger compared to that at the peripheral region and the luminous flux at the peripheral region is smaller compared to the central region. Owing to such effect, the luminous flux at the central region may be supplied to the periphery region, thereby the optical quantity distribution is o approximately uniformed at the luminous flux cross section without decreasing the utilization efficiency of the entire optical system. Specific lens data of a pair of combined lenses will be set forth exemplarily that is utilized for the optical system to compensate the optical quantity distribution. In this discussion, the lens data will be explained in the case that the optical quantity 5 distribution shows Gaussian distribution at the cross section of the output luminous flux, such as the case that the laser source is a laser array as set forth above. In a case that one semiconductor laser is connected to an input end of single mode optical fiber, the optical quantity distribution of output luminous flux from the optical fiber shows Gaussian distribution. The process for forming a permanent pattern according to the present invention may be applied, in addition, to such a case that the optical quantity near the central region is significantly larger than the optical quantity at the peripheral region as the case that the core diameter of multimode optical fiber is reduced and constructed similarly to a single mode optical fiber, for example. The essential data for the lens are summarized in Table 1 below. Table 1

As demonstrated in Table 1, a pair of combined lenses is constructed from o two non-spherical lenses of rotational symmetry. The surfaces of the lenses are defined that the surface of input side of the first lens disposed at the light input side is the first surface; the opposite surface at light output side is the second surface; the surface of input side of the second lens disposed at the light input side is the third surface; and the opposite surface at light output side is the fourth surface. The first 5 and the fourth surfaces are non-spherical. In Table 1, 'Si (surface No.)' indicates "i" th surface (i = 1 to 4), 'ri (curvature radius)' indicates the curvature radius of the "i" th surface, di (surface distance) means the surface distance between "i" th surface and "i+1" surface. The unit of di (surface distance) is millimeter (mm). Ni (refractive index) means the refractive o index of the optical element comprising "i" th surface for the light of wavelength 405 nm. In Table 2 below, the non-spherical data of the first and the fourth surfaces are summarized. Table 2

The non-spherical data set forth above may be expressed by means of the coefficients of the following equation (A) that represent the non-spherical shape.

In the above formula (A), the coefficients are defined as follows: Z: length of perpendicular that extends from a point on non-spherical surface at height p from optical axis (mm) to tangent plane at vertex of non-spherical surface or plane vertical to optical axis; p: distance from optical axis (mm); K: coefficient for circular conic; C: paraxial curvature (1/r, r: radius of paraxial curvature); ai: "i" st non-spherical coefficient (i = 3 to 10). FIG. 26 shows the optical quantity distribution of illumination light obtained by a pair of combined lenses shown in Table 1 and Table 2. The abscissa axis represents the distance from the optical axis, the ordinate axis represents the proportion of optical quantity (%). FIG. 25 shows the optical quantity distribution (Gaussian distribution) of illumination light without the compensation. As is apparent from FIGs. 25 and 26, the compensation by means of the optical system to compensate the optical quantity distribution brings about an approximately uniform optical quantity distribution significantly exceeding that without the compensation, 5 thus uniform exposing may be achieved by means of uniform laser beam without decreasing the optical utilization efficiency. [Developing Step] In the developing step, developing is performed by removing unhardened regions after the photosensitive layer is exposed and thus the exposed regions are o hardened, thereby a permanent pattern is produced. The method for removing the unhardened regions may be properly selected depending on the application; for example the unhardened regions may be removed by means of a developer. The developer may be hydroxides, carbonates, or hydrogencarbonates of5 alkaline metals or alkaline earth metals, or aqueous solution of ammonia or quaternary ammonium salts. Among these, aqueous solution of sodium carbonate is particularly preferable. The developer may be combined with surfactants, defoamers; organic bases such as benzyl amine, ethylene diamine, ethanol amine, tetramethylene ammonium o hydroxide, diethylene triamine, triethylene pentamine, morpholine, and triethanol amine; organic solvents to promote developing such as alcohols, ketones, esters, ethers, amides, and lactones. The developer set forth above may be an aqueous developer selected from aqueous solutions, aqueous alkali solutions, and combined solutions of aqueous solutions and organic solvents, alternatively an organic5 developer. [Hardening] Preferably, the inventive process for forming a permanent pattern comprises hardening' additionally. In the hardening, a hardening treatment is carried out on the photosensitive layer of the resulting permanent pattern after the developing is carried out. The hardening treatment may be properly selected depending on the application; for example, the hardening treatment may be exposing the entire surface or heating the entire body. 5 As for the exposing of the entire surface, the entire surface of the laminated body on which a permanent pattern is formed is exposed after the developing set forth above is performed, thereby the hardening is promoted in terms of the resin in the photosensitive composition of the photosensitive layer, and the surface of the permanent pattern is hardened. o The apparatus to perform the exposing of the entire surface may be properly selected depending on the application; for example, UN-rays irradiator such as a high-pressure mercury lump is recommendable. As for heating of the entire body, the entire surface of the laminated body on which a permanent pattern is formed is heated after the developing set forth above is 5 performed, thereby the hardening is promoted in terms of the resin in the photosensitive composition of the photosensitive layer, and the film strength of the permanent pattern is enhanced. The temperature of the heating of the entire body is preferably 120 to 250 °C, more preferably is 120 to 200 °C. When the temperature is less than 120 °C, the film o strength may not be enhanced sufficiently, and when the temperature is more than 250 °C, the pyrolysis is induced thereby the film may be made brittle. The period for heating the entire body is preferably 10 to 120 minutes, more preferably is 15 to 60 minutes. The apparatus for heating the entire body may be properly selected from 5 commercially available apparatuses; for example, a dry oven, hot plate, or IR heater is available. When the substrate is a printed wiring board such as a multi-layer wiring substrate, soldering may be applied after a permanent pattern is formed on the printed wiring board according to the present invention as follows: Namely, a hardened layer of the permanent pattern is formed by the developing step, and a metal layer is revealed on the surface of the printed wiring board. An plating is provided at the site of the metal layer that is revealed on the surface of the wiring board, then electric parts such as semiconductors and the like are mounted to the site where Au plating is provided. In such a construction, the permanent pattern of the hardened layer performs as a protective film, insulating fUm, or interlayer insulating fUm, thereby external shocks are mitigated and mechanical damages such as shortening of electrodes may be effectively prevented. In the processes for forming permanent patterns according to the present invention, preferably, a protective film and/ or an interlayer insulating film is formed. When the permanent pattern is a protective or an interlayer insulating film, wiring patterns may be protected from external shock or bending, which is advantageous for highly densified parts such as semiconductors or parts onto multi-layer wiring substrates or buUd-up wiring substrates in particular. The inventive processes for forming permanent patterns may make possible to form patterns in rapid velocities, thus may be applied to various patterns, in particular to wiring patterns. Further, the permanent patterns obtained by the inventive processes for forming permanent patterns may represent superior surface hardness, insulating property, thermal resistance, and the like, therefore, may be properly utilized as protective films, interlayer insulating films, and the like. The present invention will be illustrated in more detailed with reference to examples given below, but these are not to be construed as limiting the present invention. AU parts and percent are expressed by mass unless indicated otherwise. (Example 1) - Preparation of Photosensitive Composition - A liquid containing a photosensitive composition was prepared from the ingredients shown below.

- Dispersion of barium sulfate 24.75 parts

- Methyl ethyl ketone solution of 35 % by mass of addition product^1*) 13.36 parts (addition product: addition reaction between copolymer of styrene/ maleic anhydride/ butyl acrylate (mole ratio: 40/32/28) and benzylamine (1.0 equivalent based on anhydride group of the copolymer))

- R712 (bifunctional acryl monomer, by Nippon Kayaku Co., Ltd.) 3.06 parts - Dipentaerythritol hexaacrylate 4.59 parts

- IRGACURE 819 (by Ciba Speciality Chemicals Inc.) 1.98 parts

- Methyl ethyl ketone solution of 30 % F780F 0.066 part (by Dainippon Ink and Ckemicals, Inc.)

- Hydroquinone monomethylether 0.024 part - Methyl ethyl ketone 8.60 parts The dispersion of barium sulfate was prepared in the following manner, i.e. 30 parts of barium sulfate (B30, by Sakai Chemical Industry Co., Ltd.), 34.29 parts of methyl ethyl ketone solution of 35 % by mass of above noted styrene/ maleic anhydride/ butyl acrylate copolymer, and 35.71 parts of l-methoxy-2-propylacetate were mixed, then the mixture was subjected to dispersing in a condition of circumferential velocity of 9 meters per second for 3.5 hours by means of Motor Mill M-2O0 (by Iger Co.) and zirconia beads of diameter 1.0 mm. The addition product^1*) set forth above is a maelamide copolymer containing unit A and unit B expressed by formula (1) set forth above. The unit A is comprised of two types of structural units, R¹ in the first type of the structural units is phenyl group, R¹ in the second type of the structural units is butyloxy carbonyl group. R² in unit B is benzyl group. The mole fraction "x" of the repeated structural unit in unit A is 40 mole % for the first type, and is 28 mole % for the second type. The mole fraction "y" of the repeated unit in unit B is 32 mole %. The reaction amount of the benzylamine is 1.0 relative to the anhydride group of the copolymer of styrene/ maleic anhydride/ butyl acrylate. The glass transition temperature Tg of the homopolymer of the butyl acrylate vinyl monomer is - 54 °C.

- Preparation of Photosensitive Film - The resulting solution of the photosensitive composition was coated on the polyethylene terephthalate (PET) film of 20 μm thick as the support and was dried, to form a photosensitive layer of 35 μm thick. Then, a polypropylene film of 12 μm thick was laminated as a protective film using a laminator to provide a photosensitive film. - Formation of Permanent Pattern - — Preparation of Laminated Body — A copper-laminated plate, on which a wiring pattern was formed already, of 12 μm thick without through holes was surface-treated by chemical polishing to prepare a substrate. The photosensitive fUm was laminated on the copper-laminated plate whUe peeling away the protective film of the photosensitive film such that the photosensitive layer contacted with the copper-laminated plate using a vacuum laminator (MVLP500 by Meiki Co., Ltd.), thereby a laminated body was prepared in a configuration that the copper-laminated plate, photosensitive layer, and polyethylene terephthalate as the support were laminated in order. The laminating condition was a temperature of 90 °C, pressure of 0.4 MPa, and laminating velocity of 1 meter per minute. When the protective film was peeled away from the photosensitive film, the surface of the photosensitive layer did not represent tackiness property significantly, thus the protective film could be peeled away smoothly. — Exposing Step - Laser beam of wavelength 405 nm was irradiated onto the photosensitive layer of the resulting laminated body from the side of the polyethylene terephthalate film using a laser source such that a pattern with holes of different diameters was obtained and a part of the photosensitive layer was hardened. - Developing Step — After allowing to stand for 10 minutes, the polyethylene terephthalate film as the support was peeled away from the laminated body, then the entire surface of the photosensitive layer on the copper-laminated body was subjected to shower developing for 60 seconds using an aqueous solution of sodium carbonate at 1 % by mass and 30 °C as an alkaline developing liquid to remove the unhardened regions. Then the material was rinsed with water and dried to form a permanent pattern. — Hardening Treatment Step — The entire surface of the laminated body, on which the permanent pattern is 5 formed, was subjected to heating treatment at 160 °C for 30 minutes to harden the surface of the permanent pattern thereby to enhance the fUm strength. By way of visual observation of the permanent pattern, no bubbles were recognized at the surface of the permanent pattern. The resulting permanent pattern was evaluated in terms of exposure l o sensitivity, resolution, pencil hardness, and exposing velocity. The results are shown in Table 3. < Exposure Sensitivity > The permanent patterns were measured as to the thickness of the hardened region of the remaining photosensitive layer, and the relation between the irradiated

15 optical energy of laser beam and the thickness of the hardened layer was plotted to obtain a sensitivity curve. The energy at which the thickness of the hardened region corresponds to 15 μm was obtained from the sensitive curve as the optical energy necessary to harden the photosensitive layer provided that the surface of the hardened region was glossy.

20 As the result, the optical energy quantity that was necessary to harden the photosensitive layer was 30 mj/cm². < Resolution > The surface of the printed wiring substrate, on which the permanent pattern had been formed, was observed by an optical microscope, and the smallest diameter 25 of holes at which no f ilm remained was determined within the pattern of hardened layer, then the smallest diameter was defined as the resolution. The smaller value of the resolution means the better result. Consequently, the resolution was 70 μmφ. < Pencil Hardness > The printed wiring board, on which the permanent pattern was formed already, was subjected to Au-plating in conventional manner and was treated with a water-soluble flux, then was immersed into a solder bath at 260 °C for 5 seconds x three times, thereafter the flux was rinsed with water. Then, the permanent pattern after removing the flux was measured with respect to pencil hardness in accordance with JIS K-5400. Consequently, the pencil hardness of the permanent pattern was 3H to 4H. From visual observation, peeling, swelling, color change of the hardened fUm, or the like could not been observed in the permanent pattern.

< Exposing Velocity > By means of a laser source of wavelength 405 nm, the relative velocities of the exposing laser and the photosensitive layer were changed variously, and the velocity to form a permanent pattern was measured. The exposing was carried out from the side of polyethylene terephthalate f Um onto the photosensitive layer of the laminated body. The higher exposing velocity enables to form patterns more effectively. The laser source of wavelength 405 nm was equipped with a DMD laser modulator, and the exposing velocity was 13 mm/ sec. Shelf stability was evaluated for the resulting photosensitive films. The results are shown in Table 3.

< Shelf Stability > The resulting photosensitive films were stored in a promoting condition of 60 °C and dry atmosphere for two days, then the exposure sensitivity and the resolution were measured, and the shelf stability was evaluated based on the following standards. As for the photosensitive film in Example 1, the exposure sensitivity was 30 mj/cm², and the resolution was 70 μmφ, thus demonstrating superior shelf stability. [Evaluation Standard] A: almost no change for exposure sensitivity and resolution, i.e. superior shelf stability B: exposure sensitivity and resolution decrease, and developing turns to difficult, i.e. inferior shelf stability C: exposure sensitivity and resolution decrease remarkably, i.e. remarkably poor shelf stability or lack for storage abUity Tackiness property was evaluated also for photosensitive layers of photosensitive films based on the following standards. The results are shown in Table 3.

[Evaluation Standard] A: little tackiness at surface of photosensitive layer B: some tackiness at surface of photosensitive layer C: intense tackiness at surface of photosensitive layer (Example 2) A photosensitive composition was prepared in the same manner as Example 1, except for further adding hexamethyl methylolmelamine as a thermal crosslinking agent into the photosensitive composition.

- Preparation of Photosensitive Composition - A liquid containing a photosensitive composition was prepared from the ingredients shown below.

- Dispersion of barium sulfate 24.75 parts

- Methyl ethyl ketone solution of 35 % by mass of addition product 13.36 parts (addition product: addition reaction between copolymer of styrene/ maleic anhydride/ butyl acrylate (mole ratio: 40/32/28) and benzylamine (1.0 equivalent based on anhydride group of the copolymer))

- R712 (bifunctional acryl monomer, by Nippon Kayaku Co., Ltd.) 3.06 parts

- Dipentaerythritol hexaacrylate 4.59 parts

- IRGACURE 819 (by Ciba Speciality Chemicals Inc.) 1.98 parts - MW30HM (hexamethyl methylolmelamine, by Sanwa Chemical Co.) 5.00 parts

- Methyl ethyl ketone solution of 30 % F780F 0.066 part (by Dainippon Ink and Ckemicals, Inc.)

- Hydroquinone monomethylether 0.024 part

- Methyl ethyl ketone 8.60 parts - Preparation of Photosensitive FUm - Using the resulting photosensitive composition, a photosensitive film was prepared in the same manner as Example 1. Little tackiness appeared at the surface of the photosensitive layer of the resulting photosensitive film. The tackiness 5 property was evaluated in the same manner as Example 1, and the results are shown in Table 3. - Formation of Permanent Pattern - Using the resulting photosensitive film, a permanent pattern was formed. From the visual observation on the surface of the permanent pattern, no bubbles o were detected at the surface of the hardened fUm of the permanent pattern. The resulting permanent pattern was evaluated in terms of exposure sensitivity, resolution, and pencil hardness in the same manner as Example 1. Consequently, the exposure sensitivity was 30 mj/cm², the resolution was 70 μmφ, and the pencil hardness was 5H or more. From visual observation, peeling,5 swelling, color change of the hardened film, or the like could not been observed in the permanent pattern. The shelf stability was also evaluated for the photosensitive film. The exposure sensitivity was 35 mj/cm² and the resolution was 70 μmφ after the storage period, demonstrating superior shelf stability. The results are shown in Table 3. o (Example 3) - Preparation of Photosensitive Composition - A photosensitive composition was prepared in the same manner as Example 2, except that the methyl ethyl ketone solution of 35 % by mass of the addition product^2*) between copolymer of styrene/ maleic anhydride/ butyl acrylate and5 benzylamine was changed into the methyl ethyl ketone solution of 35 % by mass of the addition product between the copolymer of styrene/ maleic anhydride/ 2-ethylhexylacry late (mole ratio: 50/32/18) and benzylamine (1.0 equivalent based on anhydride group of the copolymer). The addition product^2*) set forth above is a maelamide copolymer containing unit A and unit B expressed by formula (1) set forth above. The unit A is comprised of two types of structural units, R¹ in the first type of the structural units is phenyl group, R¹ in the second type of the structural units is hexyloxy carbonyl group. R² in unit B is benzyl group. The mole fraction "x_" of the repeated structural unit in unit A is 50 mole % in the first type, and is 18 mole % in the second type. The mole fraction "y" of the repeated unit in unit B is 32 mole % . The reaction amount of the benzylamine is 1.0 equivalent relative to the anhydride group of the copolymer of styrene/ maleic anhydride/ 2-ethylhexylacrylate. The glass transition temperature Tg of the homopolymer of the 2-ethylhexylacrylate vinyl monomer is - 57 °C. - Preparation of Photosensitive Film - Using the resulting photosensitive composition, a photosensitive film was prepared in the same manner as Example 2. Little tackiness appeared at the surface of the photosensitive layer of the resulting photosensitive film. The tackiness property was evaluated in the same manner as Example 1. The results are shown in Table 3.

- Formation of Permanent Pattern - Using the resulting photosensitive film, a permanent pattern was formed. From the visual observation on the surface of the permanent pattern, no bubbles were detected at the surface of the hardened film of the permanent pattern. The resulting permanent pattern was evaluated in terms of exposure sensitivity, resolution, and pencil hardness in the same manner as Example 1. Consequently, the exposure sensitivity was 35 mj/cm², the resolution was 75 μmφ, and the pencil hardness was 5H or more. From visual observation, peeling, swelling, color change of the hardened film, or the like could not been observed in the permanent pattern. The shelf stability was also evaluated for the photosensitive film. The exposure sensitivity was 30 mj/cm² and the resolution was 75 μmφ after the storage period, demonstrating superior shelf stability. The results are shown in Table 3. (Example 4) - Preparation of Photosensitive Composition - A photosensitive composition was prepared in the same manner as Example 2, except that hexamethyl methylolmelamine was changed into a bif unctional epoxy resin (YX4000, by Japan Epoxy Resin Co.). - Preparation of Photosensitive Film - Using the resulting photosensitive composition, a photosensitive film was prepared in the same manner as Example 1. Some tackiness appeared at the surface of the photosensitive layer of the resulting photosensitive fUm. The tackiness property was evaluated in the same manner as Example 1. The results are shown in Table 4.

- Formation of Permanent Pattern - Using the resulting photosensitive film, a permanent pattern was formed. From the visual observation on the surface of the permanent pattern, some bubbles were detected at the surface of the hardened film of the permanent pattern. The resulting permanent pattern was evaluated in terms of exposure sensitivity, resolution, and pencil hardness in the same manner as Example 1. Consequently, the exposure sensitivity was 30 mj/cm², the resolution was 80 μmφ, and the pencU hardness was 5H or more. From visual observation, peeling, swelling, color change of the hardened film, or the like could not been observed in the permanent pattern. The shelf stability was also evaluated for the photosensitive film. The results are shown in Table 4. When the photosensitive film was stored in a promoting condition of 60 °C and dry atmosphere for two days, the developing was turned into difficult after 0.5 day, thus it was confirmed that the shelf stability was poor.

(Example 5) The exposure sensitivity, resolution, pencU hardness, and exposing velocity were evaluated in the same manner as Example 2, except that the exposing apparatus was changed into the pattern forming apparatus set forth below. The results are shown in Table 4. « Pattern Forming Apparatus » A pattern forming apparatus was employed that comprised: the combined laser source shown in FIGs. 27A to 32 as the laser source; DMD50 as the laser 5 modulator, in which 1024 micromirrors are arrayed as one array in the main scanning direction shown in FIGs. 4A and 4B, 768 sets of the arrays are arranged in the sub-scanning direction, and 1024 rows x 256 lines among these micromirrors can be driven; microlens array 472 in which microlenses 474, of which one surface is toric surface as shown in FIG. 13 A, are arrayed; and optical systems 480, 482 that images l o the laser through the microlens array onto the photosensitive layer. The toric surface of the microlens was as follows. In order to compensate the distortion of the output surface of microlenses 474 as the imaging portions of DMD50, the distortion at the output surface was measured, and the results are shown in FIG. 14. In FIG. 14, contour lines indicate the identical heights of the

15 reflective surface, the pitch of the contour lines is 5 nm. In FIG. 14, X and Y directions are two diagonals of micromirror 62, the micromirror 62 may rotate around the rotating axis extending to Y direction. In FIGs. 15 A and 15B, the height displacements of micromirrors 62 are shown along the X and Y directions respectively.

20 As shown in FIGs. 14, 15 A, and 15B, there exists distortion at the reflective surface of micromirror 62. With respect to the central portion of the micromirror, the distortion in one diagonal direction i.e. Y direction is larger than the other diagonal direction. Therefore, the shape of laser beam B should be distorted at the site collected through microlenses 55a of microlens array 55.

25 In FIGs. 16A and 16B, the front shape and side shape of the entire microlens array 55 are shown in detail, and also shown the sizes of various portions in the unit of millimeter (mm). As explained before referring to FIGs. 4A and 4B, 1024 lines x 256 rows of micromirrors 62 in DMD 50 are driven; correspondingly, microlens array 55 is constructed such that 1024 of microlenses 55a are aligned in width direction to form one row and the 256 rows are arrayed in length direction. In FIG. 16A, each of the sites of microlenses 55a is expressed by "j" in the width direction and "k" in the length direction. In FIGs. 17A and 17B, the front shape and the side shape of microlens 55a of 5 microlens array 55 are shown respectively. In FIG. 17A, contour lines of microlens 55a are also shown. Each of the end surfaces of the microlenses 55a is non-spherical surface in order to compensate the aberration due to the distortion of the reflective surface of micromirror 62. Specifically, microlens 55a is a toric lens; the curvature radius of optical X direction Rx is - 0.125 mm, and the curvature radius of optical Y o direction Ry is - 0.1 mm. Accordingly, the collecting condition of laser beam B within the cross section parallel to the X and Y directions are approximately as shown in FIGs. 18A and 18B respectively. Namely, comparing the X and Y directions, the curvature radius of microlens 55a is shorter and the focal length is also shorter in Y direction. 5 FIGs. 19A, 19B, 19C, and 19D show the simulations of beam diameter near the focal point of microlens 55a in the above noted shape. For the reference, FIGs. 20 A, 20B, 20C, and 20D show the simulations for microlens of Rx = Ry = - 0.1 mm. The values of "z" in the figures are expressed as the evaluation sites in focus direction of microlens 55a by the distance from the laser beam-outputting surface of o microlens 55a. The surface shape of microlens 55a in the simulation may be calculated by the following equation.

C _χ ² X ²+C _y ² Y ² 1 +S Q R T ( 1 - C x ² X ² - C y ² Y ²) In the above equation, Cx means the curvature (= 1/Rx) in X direction, Cy 5 means the curvature (= 1/Ry) in Y direction, X means the distance from optical axis O in X direction, and Y means the distance from optical axis O in Y direction. From the comparison of FIGs. 19A to 19D, and FIGs. 20A to 20D, it is apparent in the pattern forming process according to the present invention that the employment of the toric lens as the microlens 55a that has a shorter focal length in the cross section parallel to Y direction than the focal length in the cross section parallel to X direction may reduce the distortion or strain of the beam shape near the collecting site. Consequently, images can be exposed on photosensitive layer 150 5 with more clearness and without distortion or strain. In addition, it is apparent that the inventive mode shown in FIGs. 19A to 19D may bring about a wider region with smaller beam diameter, i.e. longer focal depth. Further, aperture arrays 59 disposed near the collecting site of microlens array 55 are constructed such that each aperture 59a receives only the light through l o the corresponding microlens 55a. Namely, aperture array 59 may afford the respective apertures with the insurance that the light incidence from the adjacent apertures 59a may be prevented and the extinction ratio may be enhanced. (Comparative Example 1) A photosensitive composition was prepared in the same manner as Example

15 1 except for changing the ingredients unto those shown below. - Preparation of Photosensitive Composition - A liquid containing a photosensitive composition was prepared from the ingredients shown below. - Dispersion of barium sulfate 62.77 parts 20 - PCR-1157H (diethyleneglycol monomethylether acetate solution 11.21 parts of 61.2 % by mass of epoxy acrylate, by Nippon Kayaku Co., Ltd.) - Dipentaerythritol hexaacrylate 4.83 parts - Epikote YX4000 (epoxy resin, by Japan Epoxy Resin Co.) 8.80 parts - IRGACURE 819 (by Ciba Speciality Chemicals Inc.) 2.06 parts 25 - Methyl ethyl ketone solution of 30 % F780F 0.07 part (by Dainippon Ink and Ckemicals, Inc.) - Hydroquinone monomethylether O.022 part - Methyl ethyl ketone 17.29 parts The dispersion of barium sulfate was prepared in the following manner, i.e. 30 parts of barium sulfate (B30, by Sakai Chemical Industry Co., Ltd.), 34.29 parts of diethyleneglycol monomethylether acetate solution of 61.2 % by mass of PCR-1157H, and 35.71 parts of l-methoxy-2-propylacetate were mixed, then the mixture was subjected to dispersing in a condition of circumferential velocity of 9 meters per 5 second for 3.5 hours by means of Motor Mill M-200 (by Iger Co.) and zirconia beads of diameter 1.0 mm. - Preparation of Photosensitive Film - Using the resulting photosensitive composition, a photosensitive film was prepared in the same manner as Example 1. Considerable tackiness appeared at the o surface of the photosensitive layer of the resulting photosensitive film, thus the protective film could not be peeled away. Accordingly, the photosensitive film could not be subjected to the storage test. The tackiness property was evaluated in the same manner as Example 1. The results are shown in Table 4. - Formation of Permanent Pattern -5 — Preparation of Laminated Body — Since the protective film of the photosensitive film could not be peeled away, the liquid containing the photosensitive composition set forth above was coated on outer most surface of a copper-laminated plate, on which a wiring pattern was formed already, by means of a bar coater. Then, the coating of the photosensitive o composition was dried at 100 °C for 10 minutes to form a photosensitive layer of 18 μm thick. The surface of the photosensitive layer showed considerable tackiness even after drying, and it was confirmed that contaminations tend to deposit and the handling property is poor. The resulting photosensitive layer of the laminated body was subjected to 5 exposing and then developing to form a permanent pattern. Thereafter, the entire surface of the laminated body bearing the permanent pattern was subjected to hardening treatment thereby to harden the surface of the permanent pattern and to increase the film strength. The resulting permanent pattern was evaluated in terms of exposure sensitivity, resolution, and pencil hardness in the same manner as Example 1. Consequently, the exposure sensitivity was as low as 200 mj/cm², the resolution was 80 μmφ, and the pencU hardness was 5H or more. From visual observation, peeling, swelling, and color change of the hardened film were observed in the permanent pattern. The results are shown in Table 4. Table 3

Table 4

The results of Tables 3 and 4 demonstrate that the photosensitive layers of photosensitive films produced from the photosensitive compositions of Examples 1 to 5 represent superior exposure sensitivity and higher resolution, and their surface hardness is proper in hardened layers of permanent patterns formed from the 5 photosensitive films. In addition, the photosensitive films of Examples 1 to 3, and 5 demonstrate advantages in shelf stability and tackiness of photoconductive layers. Particularly, when hexamethyl methylolmelamine was employed as the thermal crosslinking agent, surface hardness as well as shelf stability were improved remarkably. o Further, Example 5 demonstrates that the pattern forming apparatus with higher luminance and higher modulating rate may bring about superior resolution and higher exposing velocity, thus resulting in highly fine and precise patterns. The inventive photosensitive compositions and the inventive photosensitive films may represent little tackiness of the resulting surface, proper laminating ability, 5 and appropriate shelf stability, and may display superior chemical resistance, higher surface hardness, and sufficient thermal resistance. Accordingly, the inventive photosensitive compositions and the inventive photosensitive films may be widely applied to, for example, printed wiring boards such as multilayer wiring boards and build-up wiring boards; display members such as color filters, column member, rib o member, spacer, and partition member; permanent patterns such as holograms, micro machines, and proofs. In addition, the inventive permanent patterns may superior advantages in surface hardness, insulating property, and thermal resistance, therefore may be widely applied for protective layers, interlayer insulating films, and the like.5

Claims

1. A photosensitive composition comprising: (A) a copolymer,

5 (B) a polymerizable compound, and (C) a photopolymerization initiator, wherein the copolymer (A) is synthesized from a precursor copolymer containing at least a monomer unit of maleic anhydride and a primary amine compound, by reacting one equivalent of anhydride group of the precursor o copolymer with 0.1 to 1.2 equivalent of the primary amine compound. 2. The photosensitive composition according to claim 1, wherein the copolymer (A) is synthesized by reacting (a) maleic anhydride, (b) an aromatic vinyl monomer, and (c) a vinyl monomer of which the homopolymer represents a glass transition temperature of less than 80 °C, thereby to form the precursor copolymer, 5 then reacting one equivalent of anhydride group of the precursor copolymer with 0.1 to 1.0 equivalent of the primary amine compound. 3. The photosensitive composition according to one of claims 1 and 2, wherein the photosensitive composition comprises a thermal crosslinking agent. 4. The photosensitive composition according to claim 3, wherein the o thermal crosslinking agent is an alkylated methylolmelamine. 5. The photosensitive composition according to one of claims 1 to 4, wherein the polymerizable compound (B) is selected from monomers containing a (meth)acrylic group. 6. The photosensitive composition according to one of claims 1 to 5,5 wherein the photopolymerization initiator (C) comprises a compound selected from the group consisting of halogenated hydrocarbon derivatives, phosphine oxides, hexaaryl-biimidazols, oxime derivatives, organic peroxides, thio compounds, ketone compounds, acylphosphine oxide compounds, aromatic onium salts, and ketoxime ethers.

7. A photosensitive film comprising: a support, and a photosensitive layer, wherein the photosensitive layer is formed of the photosensitive composition 5 according to one of claims 1 to 6, and the photosensitive layer is laminated on the support. 8. The photosensitive film according to claim 7, wherein the photosensitive film is exposed by means of a laser beam subjected to modulating and then compensating, o the modulating is performed by a laser modulator which comprises plural imaging portions each capable of receiving the laser beam and outputting the modulated laser beam, and the compensating is performed by transmitting the modulated laser beam through plural microlenses each having a non-spherical surface capable of 5 compensating the aberration due to distortion of the output surface of the imaging portion, and the plural microlenses are arranged to a microlens array. 9. The photosensitive film according to claim 7, wherein the photosensitive film is exposed by means of a laser beam subjected to modulating by a laser modulator and then transmitting through a o microlens array of plural microlenses, the laser modulator comprises plural imaging portions each capable of receiving the laser beam and outputting the modulated laser beam, and the microlens array has an aperture configuration of the plural microlenses capable of substantially shielding incident light other than the modulated laser beam 5 from the laser modulator. 10. The photosensitive film according to one of claims 7 to 9, wherein the support comprises a synthetic resin and is transparent. 11. The photosensitive film according to one of claims 7 to 10, wherein the support is of an elongated shape.

12. The photosensitive film according to one of claims 7 to 11, wherein the photosensitive film is of an elongated shape formed by vvdnding into a roll shape. 13. The photosensitive film according to one of claims 7 to 12, wherein a protective film is provided on the photosensitive layer of the photosensitive film.

5 14. The photosensitive film according to one of claims 7 to 13, wherein the thickness of the photosensitive layer is 3 μm to 100 μm. 15. A process for forming a permanent pattern comprising: coating a photosensitive composition on a substrate, drying the photosensitive composition to form a photosensitive layer on the o substrate, exposing the photosensitive layer, and developing the exposed photosensitive layer, wherein the photosensitive composition is according to one of claims 1 to 6. 16. A process for forming a permanent pattern comprising: 5 laminating a photosensitive film on a substrate to form a photosensitive layer on the substrate under at least one of heating and pressuaring, exposing the photosensitive layer, and developing the exposed photosensitive layer, wherein the photosensitive film is according to o»ne of claims 7 to 14. 0 17. The process for forming a permanent pattern according to one of claims 15 and 16, wherein the substrate is a printed wiring board on which a wiring pattern is formed already. 18. The process for forming a permanent pattern according to one of claims 15 to 17, wherein the exposing is performed image-wise depending on pattern 5 information to be formed. 19. The process for forming a permanent pattern according to one of claims 15 to 18, wherein the exposing is performed by means of a laser beam that is modulated depending on a control signal, and the control signal is generated depending on pattern information to be formed.

20. The process for forming a permanent pattern according to one of claims 15 to 19, wherein the exposing is performed by use of a laser source for irradiating a laser beam and a laser modulator for modulating the laser beam depending on pattern information to be formed. 21. The process for forming a permanent pattern according to claim 20, wherein the laser modulator is equipped with a unit configured to generate a control signal depending on pattern information to be formed, and the laser modulator modulates the laser beam from the laser source depending on the control signal. 22. The process for forming a permanent pattern according to one of claims 20 and 21, wherein the laser modulator is equipped with plural imaging portions, and the laser modulator is capable of controlling a part of the plural imaging portions depending on pattern information. 23. The process for forming a permanent pattern according to one of claims 20 to 22, wherein the laser modulator is a spatial light modulator. 24. The process for forming a permanent pattern according to claim 23, wherein the spatial light modulator is a digital micromirror device (DMD). 25. The process for forming a permanent pattern according to one of claims 22 to 24, wherein the imaging portions are formed of micromirrors. 26. The process for forming a permanent pattern according to one of claims 22 to 25, wherein the exposing is performed by means of a laser beam subjected to modulating and then compensating, the modulating is performed by a laser modulator which comprises plural imaging portions each capable of receiving the laser beam and outputting the modulated laser beam, and the compensating is performed by transmitting the modulated laser beam through plural microlenses each having a non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portion, and the plural microlenses are arranged to a microlens array.

27. The process for forming a permanent pattern according to one of claims 22 to 25, wherein the photosensitive fUm is exposed by means of a laser beam subjected to modulating by a laser modulator and then transmitting through a 5 microlens array of plural microlenses, and the microlens array has an aperture configuration of the plural microlenses capable of substantially shielding incident light other than the modulated laser beam from the laser modulator. 28. The process for forming a permanent pattern according to claim 27, o wherein each of the microlenses has a non-spherical surface capable of compensating the aberration due to distortion of the output surface of the imaging portions. 29. The process for forming a permanent pattern according to one of claims 26 to 28, wherein the non-spherical surface is a toric surface. 30. The process for forming a permanent pattern according to one of claims5 27 to 29, wherein each of the microlenses has a circular aperture configuration. 31. The process for forming a permanent pattern according to one of claims 27 to 30, wherein the aperture configuration of the plural microlenses is defined by light shielding portion provided on the microlens surface. 32. The process for forming a permanent pattern according to one of claims0 15 to 31, wherein the exposing is performed by a laser beam transmitted through an aperture array. 33. The process for forming a permanent pattern according to one of claims 15 to 32, wherein the exposing is performed while moving relatively the laser beam and the photosensitive layer. 5 34. The process for forming a permanent pattern according to one of claims 15 to 33, wherein the exposing is performed on a partial region of the photosensitive layer. 35'. The process for forming a permanent pattern according to one of claims 20 to 34, wherein the laser source is capable of irradiating two or more types of laser beams together with. 36. The process for forming a permanent pattern according to one of claims 20 to 35, wherein the laser source comprises plural lasers, a multimode optical fiber, and a collective optical system that collects the laser beams from the plural lasers into

5 the multimode optical fiber. 37. The process for forming a permanent pattern according to one of claims 15 to 36, wherein the exposing is performed by means of laser beam having a wavelength of 395 nm to 415 nm. 38. The process for forming a permanent pattern according to one of claimso 15 to 37, wherein the photosensitive layer is hardened following the developing. 39. The process for forming a permanent pattern according to claim 38, wherein the photosensitive layer is hardened by means of at least one of irradiating the entire surface and heating the entire surface to 120 °C to 200 °C. 40. The process for forming a permanent pattern according to one of claims5 15 to 39, wherein the pattern is one selected from the group consisting of protective films, interlayer insulating films, and solder resist patterns. 41. A permanent pattern, wherein the permanent pattern is formed by the process for forming a permanent pattern according to one of claims 15 to 40. 42. The pattern according to claim 41, wherein the permanent pattern is one o selected from the group consisting of protective films, interlayer insulating films, and solder resist patterns.