WO2005083750A2 - STRUCTURE FOR AND METHOD OF FABRICATING A HIGH-SPEED CMOS-COMPATIBLE Ge-ON-INSULATOR PHOTODETECTOR - Google Patents
STRUCTURE FOR AND METHOD OF FABRICATING A HIGH-SPEED CMOS-COMPATIBLE Ge-ON-INSULATOR PHOTODETECTOR Download PDFInfo
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- WO2005083750A2 WO2005083750A2 PCT/US2005/005570 US2005005570W WO2005083750A2 WO 2005083750 A2 WO2005083750 A2 WO 2005083750A2 US 2005005570 W US2005005570 W US 2005005570W WO 2005083750 A2 WO2005083750 A2 WO 2005083750A2
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- Prior art keywords
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- photodetector
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000012212 insulator Substances 0.000 title description 38
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 17
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- 229910052732 germanium Inorganic materials 0.000 claims description 8
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- 229910004166 TaN Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE602005001401T DE602005001401T2 (en) | 2004-02-24 | 2005-02-22 | STRUCTURE AND METHOD FOR THE PRODUCTION OF A CMOS COMPATIBLE HIGH-SPEED GE-ON ISOLATOR PHOTO DECTECTOR |
CN2005800050067A CN1918713B (en) | 2004-02-24 | 2005-02-22 | semiconductor photo detector, semiconductor integrated circuit and method for manufacturing the two |
EP05723468A EP1728283B9 (en) | 2004-02-24 | 2005-02-22 | Structure for and method of fabricating a high-speed cmos-compatible ge-on-insulator photodetector |
JP2007500920A JP5186206B2 (en) | 2004-02-24 | 2005-02-22 | Structure and fabrication method of high-speed CMOS coexisting Ge-on-insulator photodetector |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/785,894 | 2004-02-24 | ||
US10/785,894 US7138697B2 (en) | 2004-02-24 | 2004-02-24 | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005083750A2 true WO2005083750A2 (en) | 2005-09-09 |
WO2005083750A3 WO2005083750A3 (en) | 2005-10-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/005570 WO2005083750A2 (en) | 2004-02-24 | 2005-02-22 | STRUCTURE FOR AND METHOD OF FABRICATING A HIGH-SPEED CMOS-COMPATIBLE Ge-ON-INSULATOR PHOTODETECTOR |
Country Status (8)
Country | Link |
---|---|
US (3) | US7138697B2 (en) |
EP (1) | EP1728283B9 (en) |
JP (2) | JP5186206B2 (en) |
KR (1) | KR100951226B1 (en) |
CN (1) | CN1918713B (en) |
AT (1) | ATE364903T1 (en) |
DE (1) | DE602005001401T2 (en) |
WO (1) | WO2005083750A2 (en) |
Cited By (7)
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US8350301B2 (en) | 2009-08-07 | 2013-01-08 | Hitachi, Ltd. | Semiconductor photodiode device and manufacturing method thereof |
US8698271B2 (en) | 2008-10-27 | 2014-04-15 | Electronics And Telecommunications Research Institute | Germanium photodetector and method of fabricating the same |
US8859319B2 (en) | 2011-12-07 | 2014-10-14 | Electronics And Telecommunications Research Institute | Methods of forming photo detectors |
US8928107B2 (en) | 2010-11-23 | 2015-01-06 | Electronics And Telecommunications Research Institute | Light detection devices and methods of manufacturing the same |
US9136303B2 (en) | 2013-08-20 | 2015-09-15 | International Business Machines Corporation | CMOS protection during germanium photodetector processing |
US20210375959A1 (en) * | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Company Limited | Germanium-containing photodetector and methods of forming the same |
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EP1728283B1 (en) | 2007-06-13 |
US20080113467A1 (en) | 2008-05-15 |
KR100951226B1 (en) | 2010-04-05 |
CN1918713A (en) | 2007-02-21 |
JP2007527626A (en) | 2007-09-27 |
DE602005001401D1 (en) | 2007-07-26 |
US20080185618A1 (en) | 2008-08-07 |
EP1728283A2 (en) | 2006-12-06 |
CN1918713B (en) | 2010-06-23 |
US7510904B2 (en) | 2009-03-31 |
EP1728283B9 (en) | 2007-10-03 |
US7138697B2 (en) | 2006-11-21 |
KR20070028311A (en) | 2007-03-12 |
JP2012186507A (en) | 2012-09-27 |
DE602005001401T2 (en) | 2008-02-21 |
WO2005083750A3 (en) | 2005-10-27 |
ATE364903T1 (en) | 2007-07-15 |
JP5404858B2 (en) | 2014-02-05 |
US7915653B2 (en) | 2011-03-29 |
JP5186206B2 (en) | 2013-04-17 |
US20050184354A1 (en) | 2005-08-25 |
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