CN114512557A - Transverse photoelectric detector - Google Patents
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- CN114512557A CN114512557A CN202210055383.7A CN202210055383A CN114512557A CN 114512557 A CN114512557 A CN 114512557A CN 202210055383 A CN202210055383 A CN 202210055383A CN 114512557 A CN114512557 A CN 114512557A
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- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
Abstract
The invention provides a transverse photoelectric detector. The lateral photodetector includes: a substrate; a first epitaxial layer formed on the substrate; the X anode regions and the Y cathode regions are alternately arranged and are all formed on the first epitaxial layer; the X anode regions and the Y cathode regions are not in direct contact with each other, and every two adjacent anode regions and cathode regions form a transverse PIN junction through the first epitaxial layer; the X first electrodes are formed on the X anode regions in a one-to-one correspondence mode and are electrically connected through first metal strip lines; and the Y second electrodes are formed on the Y cathode regions in a one-to-one correspondence mode and are electrically connected through second metal strip lines. The invention can improve the working performance of the photoelectric detector.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a transverse photoelectric detector.
Background
The semiconductor photoelectric detector has the advantages of high sensitivity, good reliability, small size, convenience in integration and the like, and has wide application prospect in the military and civil fields of fire detection, communication, remote sensing, early warning and the like.
Traditional semiconductor photoelectric detector adopts longitudinal structure more, because the short wavelength incident light signal is shorter at the inside absorption length of semiconductor material, is absorbed on the material surface usually, can't form the photocurrent in the detector inside, causes the detector to be lower to the responsivity of short wavelength signal, also is traditional semiconductor photoelectric detector working property relatively poor and sensitivity low.
Disclosure of Invention
The embodiment of the invention provides a transverse photoelectric detector, which aims to solve the problems of poor working performance and low sensitivity of the traditional semiconductor photoelectric detector.
In a first aspect, an embodiment of the present invention provides a lateral photodetector, including:
a substrate;
a first epitaxial layer formed on the substrate;
the X anode regions and the Y cathode regions are alternately arranged and are all formed on the first epitaxial layer; the X anode regions and the Y cathode regions are not in direct contact with each other, and every two adjacent anode regions and cathode regions form a transverse PIN junction through the first epitaxial layer;
x first electrodes which are formed on the X anode regions in a one-to-one correspondence manner and are electrically connected through first metal strip lines;
and the Y second electrodes are formed on the Y cathode regions in a one-to-one correspondence mode and are electrically connected through second metal strip lines.
In one possible implementation, the first epitaxial layer forms an isolation mesa between each two adjacent anode and cathode regions.
In one possible implementation, the X anode regions are heavily doped P-type regions of a first doping concentration;
the Y cathode regions are heavily doped N-type regions with second doping concentration;
the first epitaxial layer is made of a lightly doped P-type or N-type semiconductor material with a third doping concentration; wherein the first doping concentration and the second doping concentration are both greater than the third doping concentration.
In one possible implementation, the first dopingThe concentration and the second doping concentration are both 1018～1020cm-3A range;
the third doping concentration is at 1014～1018cm-3Range and does not include 1018cm-3。
In one possible implementation, the substrate is a semi-insulating type semiconductor material or a conductive type semiconductor material.
In one possible implementation, the substrate is any one of silicon, gallium arsenide, gallium nitride, silicon carbide, diamond, sapphire.
In one possible implementation, the detector further includes:
at least one buffer layer disposed between the first epitaxial layer and the substrate; alternatively, the first and second electrodes may be,
a second epitaxial layer disposed between the first epitaxial layer and the substrate, the second epitaxial layer being of a different type of semiconductor material than the first epitaxial layer.
In one possible implementation, the X anode regions and the Y cathode regions are all rectangular, or all circular, or all annular.
In one possible implementation, the detector further includes:
and a passivation layer disposed on an upper surface of the lateral photodetector and covering a region except the X first electrodes and the Y second electrodes.
In one possible implementation, the detector further includes:
and the antireflection film layer is arranged on the upper surface of the transverse photoelectric detector and covers the regions except the X first electrodes and the Y second electrodes.
The embodiment of the invention provides a transverse photoelectric detector which comprises a substrate, a first epitaxial layer, X anode regions, Y cathode regions, X first electrodes and Y second electrodes. Every two adjacent anode regions and cathode regions form a transverse PIN junction through the first epitaxial layer, so that photocurrent can be quickly formed when incident light irradiates, the detection sensitivity is greatly improved, and the working performance of the photoelectric detector is further improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a first lateral photodetector according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a second lateral photodetector provided in an embodiment of the present invention;
FIG. 3 is a schematic diagram of a third lateral photodetector provided in accordance with an embodiment of the present invention;
FIG. 4 is a schematic top view of a third lateral photodetector provided in accordance with an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a third lateral photodetector according to an embodiment of the present invention, in which the anode region and the cathode region are annular;
fig. 6 is a schematic structural diagram of a fourth lateral photodetector according to an embodiment of the present invention.
Detailed Description
In order to make the technical solution better understood by those skilled in the art, the technical solution in the embodiment of the present invention will be clearly described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is a part of the embodiment of the present invention, and not a whole embodiment. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present disclosure without any creative effort shall fall within the protection scope of the present disclosure.
The terms "include" and any other variations in the description and claims of this document and the above-described figures, mean "include but not limited to", and are intended to cover non-exclusive inclusions and not limited to the examples listed herein. Furthermore, the terms "first" and "second," etc. are used to distinguish between different objects and are not used to describe a particular order.
The following detailed description of implementations of the invention refers to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of a first lateral photodetector according to an embodiment of the present invention. Referring to fig. 1, the lateral photodetector includes a substrate 101, a first epitaxial layer 102, X anode regions 103, Y cathode regions 104, X first electrodes 105, Y second electrodes 106, a first metal strip line 107, and a second metal strip line 108.
A first epitaxial layer 102 is formed on a substrate 101. X anode regions 103 and Y cathode regions 104 are alternately arranged and formed on the first epitaxial layer 102; wherein, X anode regions 103 and Y cathode regions 104 are not in direct contact with each other, and every two adjacent anode regions 103 and cathode regions 104 form a lateral PIN junction through the first epitaxial layer 102. The X first electrodes 105 are formed on the X anode regions 104 in a one-to-one correspondence, the X first electrodes 105 are electrically connected through first metal strip lines 107, the Y second electrodes 106 are formed on the Y cathode regions in a one-to-one correspondence, and the Y second electrodes 106 are electrically connected through second metal strip lines 108.
Alternatively, the photodetector may be an avalanche photodetector. The substrate 101 is a substrate of a semiconductor material. Every two adjacent anode regions 103 and cathode regions 104 of the lateral photodetector form a lateral PIN junction by the first epitaxial layer 102. Incident light signals irradiate the surface of the transverse photoelectric detector to generate photon-generated carriers, and the photon-generated carriers rapidly move to two ends of the corresponding first electrode 105 and the second electrode 106 under the action of a transverse electric field of the transverse PIN junction to form photocurrent, so that the photoelectric detector has high responsivity to short-wavelength light signals. The higher internal gain of the transverse photoelectric detector is realized, so that the sensitivity of the transverse photoelectric detector is improved.
Alternatively, the number X of the anode regions 103 is greater than or equal to 1, the number Y of the cathode regions 104 is greater than or equal to 1, and the total number of the anode regions 103 and the cathode regions 104 is greater than or equal to 3, and is formed on the first epitaxial layer 102 in an alternating arrangement. Accordingly, each anode region 103 corresponds to one first electrode 105, each cathode region 104 corresponds to one second electrode 106, all the first electrodes 105 are electrically connected by a first metal strip line 107, and all the second electrodes 106 are electrically connected by a second metal strip line 108.
Exemplarily, referring to fig. 2, a schematic structural diagram of a lateral photodetector of a second type according to an embodiment of the present invention is shown; the number X of the anode regions 103 is 2, and the number Y of the cathode regions 104 is 2. Two first electrodes 105 and two second electrodes 106 are alternately arranged, and each first electrode 105 and the adjacent second electrode 106 form a lateral PIN junction through the first epitaxial layer 102, which can also be understood as the second electrode 106 and the adjacent first electrode 105 form a lateral PIN junction through the first epitaxial layer 102.
According to the transverse photoelectric detector provided by the embodiment of the invention, by arranging the X anode regions 103 and the Y cathode regions 104, a larger photosensitive area can be realized, so that the problems of small photosensitive area and low internal gain of the photoelectric detector are effectively solved, and the working performance of the photoelectric detector can be obviously improved.
Compared with the lateral photodetector shown in fig. 1, the lateral photodetector in this embodiment may further include an antireflection film layer disposed on the upper surface of the lateral photodetector to cover the regions except the X first electrodes and the Y second electrodes.
Optionally, an antireflection film is plated on the surface of the transverse photoelectric detector, so that the responsivity of the transverse photoelectric detector can be improved.
Illustratively, as shown in fig. 3, it shows a schematic diagram of a third lateral photodetector provided by the embodiment of the present invention; the number X of the anode regions 103 is 2, and the number Y of the cathode regions 104 is 2. The third lateral photodetector shown in FIG. 3 includes an anti-reflection film layer 109.
In some embodiments of the present invention, the detector further includes a passivation layer disposed on an upper surface of the lateral photodetector, covering regions other than the X first electrodes and the Y second electrodes.
The surface state is one of the key factors affecting the performance of the detector, and in order to improve the performance of the detector, the surface state needs to be reduced. The surface passivation is an effective means for inhibiting or reducing the surface state, so that the surface state of the detector can be reduced or inhibited by arranging a passivation layer on the surface of the transverse detector, and the working performance of the photoelectric detector is improved.
Fig. 4 is a schematic top view illustrating a third lateral photodetector provided by an embodiment of the present invention. The two first electrodes 105 are electrically connected by a first metal strip line 107, and the two second electrodes 106 are electrically connected by a second metal strip line 108.
In some embodiments of the invention, the X anode regions 103 and the Y cathode regions 104 are all rectangular, or all circular, or all annular.
Alternatively, the anode region 103 and the cathode region 104 are rectangular or circular or annular or arbitrary in shape.
Illustratively, referring to fig. 5, a schematic diagram of a third lateral photodetector according to an embodiment of the present invention is shown, in which the anode region and the cathode region are annular.
In some embodiments of the present invention, the first epitaxial layer 102 forms an isolation mesa between each two adjacent anode regions 103 and cathode regions 104.
Optionally, the upper surface of the isolation mesa is generally higher than the upper surfaces of the anode region 103 and the cathode region 104.
When the photodetector is an avalanche photodetector, the working electric field of a general avalanche photodetector is high and can reach a critical breakdown electric field, which is easy to cause the condition of premature breakdown of the surface of the detector.
Exemplarily, referring to fig. 6, a schematic structural diagram of a fourth lateral photodetector provided by the embodiment of the present invention is shown. The number X of the anode regions 103 is 2, and the number Y of the cathode regions 104 is 2. The fourth lateral photodetector shown in fig. 6 further includes an isolation mesa 110. As shown in fig. 6, there is one isolation mesa 110 between each two adjacent anode regions 103 and cathode regions 104.
In some embodiments of the present invention, the X anode regions are all heavily doped P-type regions of a first doping concentration;
the Y cathode regions are heavily doped N-type regions with second doping concentration;
the first epitaxial layer is made of a lightly doped P-type or N-type semiconductor material with a third doping concentration; and the first doping concentration and the second doping concentration are both greater than the third doping concentration.
The X anode regions 103 and the Y cathode regions 104 are doped by ion implantation, which can improve the sensitivity and the service life of the lateral photodetector.
Optionally, the first doping concentration and the second doping concentration are both 1018～1020cm-3A range;
the third doping concentration is at 1014～1018cm-3Range and does not include 1018cm-3。
In some embodiments of the present invention, the substrate 101 is a semi-insulating type semiconductor material or a conductive type semiconductor material.
Optionally, the substrate is any one of silicon, gallium arsenide, gallium nitride, silicon carbide, diamond, and sapphire.
In some embodiments of the invention, the detector further comprises:
at least one buffer layer disposed between the first epitaxial layer 102 and the substrate 101; alternatively, the first and second liquid crystal display panels may be,
a second epitaxial layer of a different type of semiconductor material than the first epitaxial layer 102 is disposed between the first epitaxial layer 102 and the substrate 101.
The X anode regions 103 and the Y cathode regions 104 of the detector of the embodiment of the invention form a plurality of transverse PIN junctions on the surface of the device through the first epitaxial layer 102.
On one hand, incident light signals irradiate the surface of the device to generate photogenerated carriers, the photogenerated carriers rapidly move to the two sides of the electrode under the action of a strong electric field of the transverse PIN junction and have a collision ionization avalanche multiplication effect, high internal gain is formed, and the sensitivity of the detector is improved.
On the other hand, the quantity of the anode region and the cathode region can be expanded randomly, almost without limitation, and a larger photosensitive area can be realized, so that the problems of small photosensitive area and low internal gain of the photoelectric detector are effectively solved.
In addition, an isolation platform is formed between every two adjacent anode regions 103 and cathode regions 104 of the first epitaxial layer 102 of the transverse photoelectric detector, so that the surface of the device can be effectively prevented from being broken down in advance, and the working reliability of the transverse photoelectric detector is improved.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A transverse photodetector comprising
A substrate;
a first epitaxial layer formed on the substrate;
the X anode regions and the Y cathode regions are alternately arranged and are all formed on the first epitaxial layer; the X anode regions and the Y cathode regions are not in direct contact with each other, and every two adjacent anode regions and cathode regions form a transverse PIN junction through the first epitaxial layer;
the X first electrodes are formed on the X anode regions in a one-to-one correspondence mode and are electrically connected through first metal strip lines;
and the Y second electrodes are formed on the Y cathode regions in a one-to-one correspondence mode and are electrically connected through second metal strip lines.
2. The lateral photodetector of claim 1, wherein the first epitaxial layer forms an isolation mesa between each two adjacent anode and cathode regions.
3. The lateral photodetector of claim 1, wherein the X anode regions are each a heavily doped P-type region of a first doping concentration;
the Y cathode regions are heavily doped N-type regions with second doping concentration;
the first epitaxial layer is made of a lightly doped P-type or N-type semiconductor material with a third doping concentration; wherein the first doping concentration and the second doping concentration are both greater than the third doping concentration.
4. The lateral photodetector of claim 3, wherein the first doping concentration and the second doping concentration are both at 1018～1020cm-3A range;
the third doping concentration is at 1014～1018cm-3Range and does not include 1018cm-3。
5. The lateral photodetector of claim 1, wherein the substrate is a semi-insulating type semiconductor material or a conductive type semiconductor material.
6. The lateral photodetector of claim 5, wherein the substrate is any one of silicon, gallium arsenide, gallium nitride, silicon carbide, diamond, sapphire.
7. The lateral photodetector of any one of claims 1 to 6, wherein the detector further comprises:
at least one buffer layer disposed between the first epitaxial layer and the substrate; alternatively, the first and second electrodes may be,
a second epitaxial layer disposed between the first epitaxial layer and the substrate, the second epitaxial layer being of a different type of semiconductor material than the first epitaxial layer.
8. The lateral photodetector of any one of claims 1 to 6, wherein the X anode regions and the Y cathode regions are all rectangular, or are all circular, or are all annular.
9. The lateral photodetector of any one of claims 1 to 6, wherein the detector further comprises:
and a passivation layer disposed on an upper surface of the lateral photodetector and covering a region except the X first electrodes and the Y second electrodes.
10. The lateral photodetector of any one of claims 1 to 6, wherein the detector further comprises:
and the antireflection film layer is arranged on the upper surface of the transverse photoelectric detector and covers the region except the X first electrodes and the Y second electrodes.
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| CN107658363A (en) * | 2017-08-11 | 2018-02-02 | 西安科锐盛创新科技有限公司 | Horizontal PiN structures photodetector |
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