CN114141886A - Avalanche photodiode array detector - Google Patents
Avalanche photodiode array detector Download PDFInfo
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- CN114141886A CN114141886A CN202111388032.XA CN202111388032A CN114141886A CN 114141886 A CN114141886 A CN 114141886A CN 202111388032 A CN202111388032 A CN 202111388032A CN 114141886 A CN114141886 A CN 114141886A
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Abstract
The invention provides an avalanche photodiode array detector, which comprises a first conduction type substrate layer, a PN junction, an isolation structure, at least one anode leading-out end and a cathode leading-out end, wherein the first conduction type semiconductor layer is positioned on the first conduction type substrate layer, the PN junction is positioned in the first conduction type semiconductor layer, and the projection of the PN junction on the horizontal plane has an interval area; the isolation structure is located in the first conductive type semiconductor layer and in the PN junction spacing region, and the isolation structure is not in contact with the PN junction. In the invention, the projection of the PN junction of the single pixel on the horizontal plane has the interval region, so that the total width of the PN junction of the single pixel is reduced, the whole PN junction region and the region between the PN junctions can absorb incident photons, and the reduction of the heavily doped second conductive type doped layer can improve the absorption of partial short-wavelength photons, thereby not influencing the photon detection efficiency of the avalanche photodiode and simultaneously reducing the dark current or dark counting rate of the single pixel.
Description
Technical Field
The invention belongs to the technical field of photoelectricity, and relates to an avalanche photodiode array detector.
Background
The Single photon detector comprises a Photomultiplier Tube (PMT for short), an analog or digital Silicon Photomultiplier (Silicon Photomultiplier for short), a Single photon avalanche photodiode (SPAD) and the like, wherein the PMT has the defects of low detection efficiency, sensitivity to a magnetic field, unsuitability for manufacturing a large-scale array and the like due to the fact that the PMT is large in size, high in working voltage, high in power consumption, easy to damage and limited by a light receiving cathode, and the application of the Single photon detector is limited. For this reason, an analog silicon-based photomultiplier has been proposed, and an Avalanche Photodiode (APD) is designed to obtain a high Photon Detection Efficiency (PDE) and a low Dark Count Rate (DCR), but the Dark Count rate is mainly related to the active area of the device, and the Dark current or the Dark Count rate increases as the Photon detection efficiency increases. Therefore, how to guarantee the photon detection efficiency and simultaneously, the dark counting rate of the device is very important to be suppressed.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide an avalanche photodiode array detector for solving the problem of the prior art that it is impossible to suppress the dark current or dark count rate of the device while improving the photon detection efficiency.
To achieve the above and other related objects, the present invention provides an avalanche photodiode array detector including a plurality of single pixel structures, the single pixel structures including:
a first conductivity type substrate layer;
a first conductive type semiconductor layer on the first conductive type substrate layer;
the PN junction is positioned in the first conductive type semiconductor layer and comprises a first conductive type doping layer and a second conductive type doping layer which are sequentially arranged from bottom to top, the doping concentration of the first conductive type doping layer is higher than that of the first conductive type semiconductor layer, the doping concentration of the second conductive type doping layer is higher than that of the first conductive type doping layer, the first conductive type is an N type or a P type, the second conductive type is opposite to the first conductive type, and the projection of the PN junction on the horizontal plane has a spacing region;
an isolation structure in the first conductive type semiconductor layer and in the spacing region, the isolation structure not being in contact with the PN junction;
at least one anode leading-out terminal which is positioned on the first conductive type semiconductor layer and is contacted with the second conductive type doped layer;
and the cathode lead-out terminal is positioned below the first conduction type substrate layer.
Optionally, a projection of the PN junction on a horizontal plane is at least one of spiral, grid, comb-tooth, and circular.
Optionally, a top surface of the isolation structure is flush with a top surface of the first conductive type semiconductor layer, and a bottom surface of the isolation structure is higher than a bottom surface of the PN junction.
Optionally, the isolation structure includes a second conductive type doped region based on the first conductive type semiconductor layer.
Optionally, a doping concentration of the second conductive-type doped region is higher than a doping concentration of the first conductive-type doped layer.
Optionally, the isolation structure includes a trench and an isolation material filled in the trench, the trench is opened from a top surface of the first conductivity type semiconductor layer and extends downward, and a bottom surface of the trench is higher than a bottom surface of the PN junction.
Optionally, the sidewalls of the trench are sloped.
Optionally, the isolation material comprises an insulating medium.
Optionally, the avalanche photodiode array detector further includes an antireflection layer, the antireflection layer is located on the first conductivity type semiconductor layer, and the anode lead-out end penetrates through the antireflection layer.
Optionally, a cross-sectional area of the second conductivity-type doped layer is greater than a cross-sectional area of the first conductivity-type doped layer.
As described above, in the avalanche photodiode array detector of the present invention, the projection of the PN junction of a single pixel on the horizontal plane has the spacing region, so that part of the PN junction is in a separated state and is separated by the isolation structure, the existence of the isolation structure can ensure that the space charge regions do not overlap each other when the device is broken down, thus the total width of the PN junction of the single pixel is reduced, the whole PN junction region and the region between the PN junctions can absorb incident photons, and the reduction of the heavily doped second conductivity type doped layer can improve the absorption of part of short wavelength (<400nm) photons, so the photon detection efficiency of the avalanche photodiode is not affected, and the dark current or the counting dark rate of the single pixel is reduced.
Drawings
Figure 1 shows a cross-sectional schematic of a simplified structure of a single pixel structure in an avalanche photodiode detector.
Fig. 2 is a schematic cross-sectional view of a simplified structure of a single pixel structure in an avalanche photodiode array detector according to a first embodiment of the present invention.
Fig. 3 is a first plan view showing the first conductive type semiconductor layer, the second conductive type doped layer of the PN junction, the isolation structure, and the anode tap.
Fig. 4 is a second plan view showing the first conductive type semiconductor layer, the second conductive type doped layer of the PN junction, the isolation structure, and the anode tap.
Fig. 5 is a third plan view showing the first conductive type semiconductor layer, the second conductive type doped layer of the PN junction, the isolation structure, and the anode tap.
Fig. 6 is a fourth plan view showing the first conductive type semiconductor layer, the second conductive type doped layer of the PN junction, the isolation structure, and the anode tap.
Fig. 7 is a cross-sectional view of a simplified structure of a single pixel structure in an avalanche photodiode array detector according to a second embodiment of the present invention.
Description of the element reference numerals
101 surface antireflection layer
102 heavily doped region of the second type
103 first type doped region
104 lightly doped region of the first type
105 heavily doped substrate layer of a first type
106 anode lead-out terminal
107 space charge region
108 cathode lead-out terminal
201 antireflection layer
202 second conductivity type doped layer
203 first conductivity type doped layer
204 first conductivity type semiconductor layer
205 a substrate layer of a first conductivity type
206 anode lead-out terminal
207 space charge region
208 cathode lead-out terminal
209 isolation structures
209a groove
209b isolation material
M spacer region
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 7. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1, which is a schematic cross-sectional view of a simplified structure of a single-pixel structure in an avalanche photodiode detector, and arrows represent incident photons hv, wherein the avalanche photodiode structure includes a first-type heavily doped substrate layer 105 of silicon or other compound semiconductor, on which are a first-type lightly doped region 104, a first-type doped region 103, a second-type heavily doped region 102, a device surface anti-reflection layer 101, an anode terminal 106 of the second-type heavily doped region of the device, and a cathode terminal 108 of the first-type heavily doped region of the device, wherein the first type is N-type or P-type, and the second type is opposite to the first type. The PN junction of the device is composed of the first type doped region 103 and the second type heavily doped region 102, and the space charge region 107 thereof when it breaks down under reverse bias is mainly determined by the second type heavily doped region 102. When the doping type and the doping concentration of the device are fixed, the dark current or dark count rate of the device is in direct proportion to the width of the second-type heavily doped region 102. Increasing the width of the heavily doped second-type region 102 can improve the photon detection efficiency, but also can improve the dark current or dark count rate of the device.
Therefore, the invention provides an improved avalanche photodiode array detector, which reduces the dark current or dark count rate of the device while ensuring the constant photon detection efficiency of the avalanche photodiode detector.
Example one
Referring to fig. 2, a cross-sectional view of a simplified structure of a single pixel structure in an avalanche photodiode array detector in the present embodiment is shown, including a first conductivity type substrate layer 205, a first conductivity type semiconductor layer 204, a PN junction, an isolation structure 209, at least one anode terminal 206, and a cathode terminal 208, where the first conductivity type semiconductor layer 204 is located on the first conductivity type substrate layer 205; the PN junction is positioned in the first conductive type semiconductor layer 204 and comprises a first conductive type doped layer 203 and a second conductive type doped layer 202 which are sequentially arranged from bottom to top, wherein the projection of the PN junction on the horizontal plane has a spacing region M; the isolation structure 209 is located in the first conductive type semiconductor layer 204 and located in the spacing region M, and the isolation structure 209 is not in contact with the PN junction; the anode tap 206 is located on the first conductive type semiconductor layer 204 and contacts the second conductive type doped layer 202; the cathode lead 208 is located below the first conductivity type substrate layer 205.
As an example, the material of the first conductive type substrate layer 205 includes, but is not limited to, silicon nitride, silicon carbide, gallium arsenide, gallium indium nitride or other compound semiconductor, the material of the first conductive type semiconductor layer 204 includes, but is not limited to, silicon nitride, silicon carbide, gallium arsenide, gallium indium nitride or other compound semiconductor, and the material of the anode terminal 206 and the cathode terminal 208 includes a conductive metal material.
As an example, the first conductive type substrate layer 205 is an N-type heavily doped substrate, the first conductive type semiconductor layer 204 is an N-type lightly doped layer, the first conductive type doped layer 203 is an N-type doped layer, and the second conductive type doped layer 202 is a P-type heavily doped layer. It should be noted that here, lightly doped and heavily doped are relative concepts, wherein the doping concentration satisfies: the doping amount can be adjusted according to the requirement. In this embodiment, the doping concentration of the first conductive-type doped layer 203 is higher than the doping concentration of the first conductive-type semiconductor layer 204, and the doping concentration of the second conductive-type doped layer 202 is higher than the doping concentration of the first conductive-type doped layer 203.
In another embodiment, the first conductive type may also be a P-type, and the second conductive type is an N-type opposite to the first conductive type.
As an example, in the PN junction, the cross-sectional area of the second conductive-type doped layer 202 is larger than that of the first conductive-type doped layer 203.
Specifically, the space charge region 207 in which the PN junction formed by the first conductive-type doped layer 203 and the second conductive-type doped layer 202 breaks down under reverse bias is mainly determined by the second conductive-type doped layer 202.
As an example, please refer to fig. 3, which shows a plan layout of the first conductivity-type semiconductor layer 204, the second conductivity-type doped layer 202 of the PN junction, the isolation structure 209, and the anode terminal 206, wherein the projection of the PN junction on the horizontal plane is spiral, and the shape of the isolation structure 209 is adapted to the shape of the PN junction and is also spiral. The number of the anode tap 206 may be plural, which may improve reliability of electrical connection and uniformity of current distribution.
As an example, please refer to fig. 4, which shows another layout diagram of the first conductivity-type semiconductor layer 204, the second conductivity-type doped layer 202 of the PN junction, and the isolation structure 209, wherein a projection of the PN junction on a horizontal plane is in a grid shape, and a shape of the isolation structure 209 is adapted to a shape of the PN junction and is in a dot shape surrounded by the PN structure.
As an example, please refer to fig. 5, which shows a third layout view of the first conductivity-type semiconductor layer 204, the second conductivity-type doped layer 202 of the PN junction, and the isolation structure 209, wherein a projection of the PN junction on a horizontal plane is a circular ring shape, and the isolation structure 209 has a shape corresponding to the shape of the PN junction and is a dot shape surrounded by the PN junction.
As an example, please refer to fig. 5, which shows a third layout view of the first conductivity-type semiconductor layer 204, the second conductivity-type doped layer 202 of the PN junction, and the isolation structure 209, wherein a projection of the PN junction on a horizontal plane is a circular ring shape, and the isolation structure 209 has a shape corresponding to the shape of the PN junction and is a dot shape surrounded by the PN junction.
As an example, please refer to fig. 6, which shows a fourth layout view of the first conductivity-type semiconductor layer 204, the second conductivity-type doped layer 202 of the PN junction, and the isolation structure 209, wherein a projection of the PN junction on a horizontal plane is comb-shaped, and the isolation structure 209 has a shape corresponding to the shape of the PN junction, and may be comb-shaped or a plurality of separate strips.
It should be noted that, in other embodiments, the projection of the PN junction on the horizontal plane may also be in other patterns (non-complete planar structures) with a spacing region, which is not limited to this embodiment.
Specifically, since the projection of the PN junction on the horizontal plane has the spacing region M, so that a partial region of the PN junction is in a separated state and is separated by the isolation structure 209, the existence of the isolation structure can ensure that space charge regions of the device do not overlap each other in the geiger mode, so that the total width of the PN junction of a single pixel is reduced, the whole PN junction region and the region between the PN junctions can absorb incident photons, and the reduction of the heavily doped second conductivity type doped layer 202 can improve the absorption of partial short-wavelength (<400nm) photons, so that the photon detection efficiency of the avalanche photodiode is not affected, and the dark current or dark count rate of the single pixel is reduced.
As an example, referring back to fig. 2, a top surface of the isolation structure 209 is flush with a top surface of the first conductive type semiconductor layer 204, and a bottom surface of the isolation structure 209 is higher than a bottom surface of the PN junction.
As an example, the isolation structure 209 includes a second conductive type doped region based on the first conductive type semiconductor layer 204, that is, the isolation structure 209 is obtained by doping a corresponding region of the first conductive type semiconductor layer 204 with the second conductive type. In this embodiment, the doping concentration of the second conductive type doping region is higher than the doping concentration of the first conductive type doping layer 203 and is equivalent to the doping concentration of the second conductive type doping layer 202.
As an example, the avalanche photodiode array detector further includes an anti-reflection layer 201, the anti-reflection layer 201 is located on the first conductive type semiconductor layer 204, and the anode lead 206 penetrates through the anti-reflection layer 201.
Example two
The present embodiment adopts substantially the same technical solution as the first embodiment, except that in the first embodiment, the isolation structure 209 is obtained by doping the first conductivity-type semiconductor layer 204, and in the present embodiment, the isolation structure 209 adopts a trench structure.
Referring to fig. 7, a cross-sectional view of a simplified structure of a single-pixel structure in an avalanche photodiode array detector in the present embodiment is shown, wherein the isolation structure 209 includes a trench 209a and an isolation material 209b filled in the trench 209a, the trench 209a is opened from a top surface of the first conductivity type semiconductor layer 204 and extends downward, and a bottom surface of the trench is higher than a bottom surface of the PN junction.
As an example, the trench 209a may be obtained by wet etching the first conductive type semiconductor layer 204, and a sidewall of the trench 209a is inclined.
By way of example, the isolation material 209b comprises an insulating dielectric, such as an insulating material such as silicon dioxide, silicon nitride, or the like. In the present embodiment, the isolation material 209b may be made of an anti-reflective material deposited in the trench 209a when the anti-reflective layer 201 is formed.
EXAMPLE III
The present embodiment adopts substantially the same technical solutions as the first embodiment or the second embodiment, except that in the first embodiment or the second embodiment, the PN junction is not completely divided by the spacing region M, and the PN junction is still a whole, and in the present embodiment, the PN junction is divided by the spacing region M into at least two independent portions located in the first conductive type semiconductor layer 204.
It is to be noted that, although the PN junction includes at least two separate portions in the first conductivity-type semiconductor layer 204, these separate portions are electrically connected together through the anode tap 106.
In summary, in the avalanche photodiode array detector of the present invention, the projection of the PN junction of a single pixel on the horizontal plane has an interval region, so that part of the PN junction is in a separate state and is isolated by the isolation structure, the existence of the isolation structure can ensure that the space charge regions do not overlap each other when the device is broken down, so that the total width of the PN junction of the single pixel is reduced, the whole PN junction region and the region between the PN junctions can absorb incident photons, and the reduction of the heavily doped second conductive type doped layer can improve the absorption of part of short wavelength (<400nm) photons, so that the photon detection efficiency of the avalanche photodiode is not affected, and the dark current or dark count rate of the single pixel is reduced. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An avalanche photodiode array detector comprising a plurality of single pixel structures, the single pixel structures comprising:
a first conductivity type substrate layer;
a first conductive type semiconductor layer on the first conductive type substrate layer;
the PN junction is positioned in the first conductive type semiconductor layer and comprises a first conductive type doping layer and a second conductive type doping layer which are sequentially arranged from bottom to top, the doping concentration of the first conductive type doping layer is higher than that of the first conductive type semiconductor layer, the doping concentration of the second conductive type doping layer is higher than that of the first conductive type doping layer, the first conductive type is an N type or a P type, the second conductive type is opposite to the first conductive type, and the projection of the PN junction on the horizontal plane has a spacing region;
an isolation structure in the first conductive type semiconductor layer and in the spacing region, the isolation structure not being in contact with the PN junction;
at least one anode leading-out terminal which is positioned on the first conductive type semiconductor layer and is contacted with the second conductive type doped layer;
and the cathode lead-out terminal is positioned below the first conduction type substrate layer.
2. The avalanche photodiode array detector of claim 1, wherein: the projection of the PN junction on the horizontal plane is at least one of spiral, grid, comb-tooth and circular.
3. The avalanche photodiode array detector of claim 1, wherein: the top surface of the isolation structure is flush with the top surface of the first conductive type semiconductor layer, and the bottom surface of the isolation structure is higher than the bottom surface of the PN junction.
4. The avalanche photodiode array detector of claim 1, wherein: the isolation structure includes a second conductive type doped region based on the first conductive type semiconductor layer.
5. The avalanche photodiode array detector of claim 4, wherein: the doping concentration of the second conductive type doping region is higher than that of the first conductive type doping layer.
6. The avalanche photodiode array detector of claim 1, wherein: the isolation structure comprises a groove and an isolation material filled in the groove, the groove extends downwards from the opening of the top surface of the first conduction type semiconductor layer, and the bottom surface of the groove is higher than that of the PN junction.
7. The avalanche photodiode array detector of claim 6, wherein: the side walls of the trench are sloped.
8. The avalanche photodiode array detector of claim 6, wherein: the isolation material comprises an insulating medium.
9. The avalanche photodiode array detector of claim 1, wherein: the avalanche photodiode array detector further comprises an anti-reflection layer, the anti-reflection layer is located on the first conduction type semiconductor layer, and the anode leading-out end penetrates through the anti-reflection layer.
10. The avalanche photodiode array detector of claim 1, wherein: the cross-sectional area of the second conductive-type doped layer is greater than the cross-sectional area of the first conductive-type doped layer.
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