WO2005072154A3 - Vertical gate cmos with lithography-independent gate length - Google Patents

Vertical gate cmos with lithography-independent gate length Download PDF

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Publication number
WO2005072154A3
WO2005072154A3 PCT/US2005/001313 US2005001313W WO2005072154A3 WO 2005072154 A3 WO2005072154 A3 WO 2005072154A3 US 2005001313 W US2005001313 W US 2005001313W WO 2005072154 A3 WO2005072154 A3 WO 2005072154A3
Authority
WO
WIPO (PCT)
Prior art keywords
gate
vertical
lithography
cmos
independent
Prior art date
Application number
PCT/US2005/001313
Other languages
French (fr)
Other versions
WO2005072154A2 (en
Inventor
Bohumil Lojek
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/761,876 external-priority patent/US6846709B1/en
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to EP05705754A priority Critical patent/EP1709680A4/en
Publication of WO2005072154A2 publication Critical patent/WO2005072154A2/en
Publication of WO2005072154A3 publication Critical patent/WO2005072154A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823885—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Abstract

Formation of elements of a vertical transistor is described, particularly, a gate (1905)- source (1901) - drain (1903) arrangement of a CMOS transistor. Vertical transistors are used frequently in the integrated circuit art. Accordingly, improved methods for their formation, which are not limited by constraints of photolithography, have great utility and importance. Those of skill in the art will appreciate that the techniques described may be used to fabricate other types of devices as well. For example, junctions of a bipolar transistor (as well as other device junction types) may be fabricated using the methods described herein.
PCT/US2005/001313 2004-01-21 2005-01-18 Vertical gate cmos with lithography-independent gate length WO2005072154A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05705754A EP1709680A4 (en) 2004-01-21 2005-01-18 Vertical gate cmos with lithography-independent gate length

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/761,876 US6846709B1 (en) 2003-10-06 2004-01-21 Vertical gate CMOS with lithography-independent gate length
US10/761,876 2004-01-21

Publications (2)

Publication Number Publication Date
WO2005072154A2 WO2005072154A2 (en) 2005-08-11
WO2005072154A3 true WO2005072154A3 (en) 2005-12-08

Family

ID=34826456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/001313 WO2005072154A2 (en) 2004-01-21 2005-01-18 Vertical gate cmos with lithography-independent gate length

Country Status (4)

Country Link
EP (1) EP1709680A4 (en)
CN (1) CN100442477C (en)
TW (1) TW200531215A (en)
WO (1) WO2005072154A2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780327A (en) * 1996-03-05 1998-07-14 International Business Machines Corporation Vertical double-gate field effect transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0418421B1 (en) * 1989-09-22 1998-08-12 Siemens Aktiengesellschaft Method of making a bipolar transistor having a reduced base-collector capacitance
JP3229012B2 (en) * 1992-05-21 2001-11-12 株式会社東芝 Method for manufacturing semiconductor device
US5786256A (en) * 1996-07-19 1998-07-28 Advanced Micro Devices, Inc. Method of reducing MOS transistor gate beyond photolithographically patterned dimension
US20010017392A1 (en) * 1997-05-19 2001-08-30 International Business Machines Corporation. Vertical transport MOSFETs and method for making the same
US6040214A (en) * 1998-02-19 2000-03-21 International Business Machines Corporation Method for making field effect transistors having sub-lithographic gates with vertical side walls
US6392271B1 (en) * 1999-06-28 2002-05-21 Intel Corporation Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
US6518616B2 (en) * 2001-04-18 2003-02-11 International Business Machines Corporation Vertical gate top engineering for improved GC and CB process windows
US20030008515A1 (en) * 2001-07-03 2003-01-09 Tai-Ju Chen Method of fabricating a vertical MOS transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780327A (en) * 1996-03-05 1998-07-14 International Business Machines Corporation Vertical double-gate field effect transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1709680A4 *

Also Published As

Publication number Publication date
TW200531215A (en) 2005-09-16
WO2005072154A2 (en) 2005-08-11
CN100442477C (en) 2008-12-10
EP1709680A2 (en) 2006-10-11
CN1910748A (en) 2007-02-07
EP1709680A4 (en) 2008-07-02

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