WO2005066793A3 - Memoire non volatile et procede avec gestion de bloc de mise a jour non sequentielle - Google Patents

Memoire non volatile et procede avec gestion de bloc de mise a jour non sequentielle Download PDF

Info

Publication number
WO2005066793A3
WO2005066793A3 PCT/US2004/043762 US2004043762W WO2005066793A3 WO 2005066793 A3 WO2005066793 A3 WO 2005066793A3 US 2004043762 W US2004043762 W US 2004043762W WO 2005066793 A3 WO2005066793 A3 WO 2005066793A3
Authority
WO
WIPO (PCT)
Prior art keywords
index
stored
sequential
block
logical
Prior art date
Application number
PCT/US2004/043762
Other languages
English (en)
Other versions
WO2005066793A2 (fr
Inventor
Alan Welsh Sinclair
Sergey Anatolievich Gorobets
Alan David Bennett
Peter John Smith
Original Assignee
Sandisk Corp
Alan Welsh Sinclair
Sergey Anatolievich Gorobets
Alan David Bennett
Peter John Smith
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/750,155 external-priority patent/US7139864B2/en
Application filed by Sandisk Corp, Alan Welsh Sinclair, Sergey Anatolievich Gorobets, Alan David Bennett, Peter John Smith filed Critical Sandisk Corp
Priority to JP2006547516A priority Critical patent/JP4851344B2/ja
Priority to EP04815767A priority patent/EP1704484A2/fr
Publication of WO2005066793A2 publication Critical patent/WO2005066793A2/fr
Publication of WO2005066793A3 publication Critical patent/WO2005066793A3/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies

Abstract

Dans une mémoire non volatile avec un système de gestion de bloc qui prend en charge la mise à jour des blocs avec des unités logiques non séquentielles, un index des unités logiques dans un bloc de mise à jour non séquentielle est mis en mémoire tampon RAM et stocké périodiquement dans la mémoire non volatile. Dans un mode de réalisation, l'index est stocké dans un bloc destiné au stockage d'index. Dans un autre mode de réalisation, l'index est stocké dans le bloc de mise à jour lui-même. Dans un autre mode de réalisation, l'index est stocké dans l'en-tête de chaque unité logique. Dans un autre aspect, les informations d'indexage des unités logiques écrites après la dernière mise à jour d'index, mais avant la prochaine, sont stockées dans l'en-tête de chaque unité logique. Ainsi, après une panne du système d'alimentation, l'emplacement d'unités logiques écrites récemment peut être déterminé sans qu'il faille procéder à un balayage lors de l'initialisation. Dans un autre aspect, un bloc est géré en partie de façon séquentielle et en partie de façon non séquentielle, et dirigé vers plusieurs sous-groupes logiques.
PCT/US2004/043762 2003-12-30 2004-12-21 Memoire non volatile et procede avec gestion de bloc de mise a jour non sequentielle WO2005066793A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006547516A JP4851344B2 (ja) 2003-12-30 2004-12-21 不揮発性メモリおよび非順次更新ブロック管理を伴う方法
EP04815767A EP1704484A2 (fr) 2003-12-30 2004-12-21 Memoire non volatile et procede avec gestion de bloc de mise a jour non sequentielle

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/750,155 US7139864B2 (en) 2003-12-30 2003-12-30 Non-volatile memory and method with block management system
US10/750,155 2003-12-30
US10/917,867 2004-08-13
US10/917,867 US20050141312A1 (en) 2003-12-30 2004-08-13 Non-volatile memory and method with non-sequential update block management

Publications (2)

Publication Number Publication Date
WO2005066793A2 WO2005066793A2 (fr) 2005-07-21
WO2005066793A3 true WO2005066793A3 (fr) 2006-06-15

Family

ID=34753194

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/043762 WO2005066793A2 (fr) 2003-12-30 2004-12-21 Memoire non volatile et procede avec gestion de bloc de mise a jour non sequentielle

Country Status (4)

Country Link
EP (1) EP1704484A2 (fr)
KR (1) KR20070007264A (fr)
TW (1) TWI288328B (fr)
WO (1) WO2005066793A2 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
TW200608201A (en) * 2004-04-28 2006-03-01 Matsushita Electric Ind Co Ltd Nonvolatile storage device and data write method
US9104315B2 (en) 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
EP1920335B1 (fr) * 2005-08-03 2011-05-11 SanDisk Corporation Recuperation de capacite de stockage de donnees dans des systemes a memoire flash
WO2007019197A2 (fr) * 2005-08-03 2007-02-15 Sandisk Corporation Gestion de blocs memoire dans lesquels les fichiers de donnees sont directement stockes
JP4547028B2 (ja) * 2005-08-03 2010-09-22 サンディスク コーポレイション ブロック管理を伴う不揮発性メモリ
US7409489B2 (en) * 2005-08-03 2008-08-05 Sandisk Corporation Scheduling of reclaim operations in non-volatile memory
US7747837B2 (en) 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US7769978B2 (en) 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
US7793068B2 (en) 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
EP2097825B1 (fr) 2006-12-26 2013-09-04 SanDisk Technologies Inc. Système de fichiers de données directes comprenant une interface d'espace adresse logique continu
US7739444B2 (en) 2006-12-26 2010-06-15 Sandisk Corporation System using a direct data file system with a continuous logical address space interface
US8046522B2 (en) 2006-12-26 2011-10-25 SanDisk Technologies, Inc. Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks
US8166267B2 (en) 2006-12-26 2012-04-24 Sandisk Technologies Inc. Managing a LBA interface in a direct data file memory system
US8209461B2 (en) 2006-12-26 2012-06-26 Sandisk Technologies Inc. Configuration of host LBA interface with flash memory
US7917686B2 (en) 2006-12-26 2011-03-29 Sandisk Corporation Host system with direct data file interface configurability
US8429352B2 (en) 2007-06-08 2013-04-23 Sandisk Technologies Inc. Method and system for memory block flushing
KR100922389B1 (ko) 2007-07-04 2009-10-19 삼성전자주식회사 플래시 메모리를 위한 색인 스킴
KR100907477B1 (ko) * 2007-07-16 2009-07-10 한양대학교 산학협력단 플래시 메모리에 저장된 데이터의 인덱스 정보 관리 장치및 방법
JP2009211192A (ja) * 2008-02-29 2009-09-17 Toshiba Corp メモリシステム
KR101565975B1 (ko) 2009-02-27 2015-11-04 삼성전자주식회사 인덱스를 저장하는 플래시 메모리를 포함하는 사용자 장치 및 그것의 인덱스 액세스 방법
KR101543246B1 (ko) 2009-04-24 2015-08-11 삼성전자주식회사 데이터 저장 장치의 동작 방법 및 이에 따른 데이터 저장 장치
TWI417889B (zh) * 2009-12-30 2013-12-01 Silicon Motion Inc 快閃記憶體之寫入逾時控制方法及其記憶裝置
TWI424438B (zh) * 2009-12-30 2014-01-21 Asolid Technology Co Ltd 非揮發性記憶體控制裝置及其多階重新排序方法
TWI604307B (zh) 2014-10-31 2017-11-01 慧榮科技股份有限公司 資料儲存裝置以及快閃記憶體控制方法
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10261876B2 (en) * 2016-11-08 2019-04-16 Micron Technology, Inc. Memory management
CN108959280B (zh) * 2017-05-17 2021-08-06 中国移动通信有限公司研究院 一种存储虚拟资源关联信息的方法及装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742934A (en) * 1995-09-13 1998-04-21 Mitsubishi Denki Kabushiki Kaisha Flash solid state disk card with selective use of an address conversion table depending on logical and physical sector numbers
EP0887732A1 (fr) * 1997-06-20 1998-12-30 Sony Corporation Méthode de traitement de données de gestion et support d'enregistrement
EP0977121A2 (fr) * 1998-07-28 2000-02-02 Sony Corporation Mémoire non volatile, apparail et procéde d'enregistrement
US20030110343A1 (en) * 2001-12-11 2003-06-12 Mitsubishi Denki Kabushiki Kaisha File system including non-volatile semiconductor memory device having a plurality of banks

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6771536B2 (en) * 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742934A (en) * 1995-09-13 1998-04-21 Mitsubishi Denki Kabushiki Kaisha Flash solid state disk card with selective use of an address conversion table depending on logical and physical sector numbers
EP0887732A1 (fr) * 1997-06-20 1998-12-30 Sony Corporation Méthode de traitement de données de gestion et support d'enregistrement
EP0977121A2 (fr) * 1998-07-28 2000-02-02 Sony Corporation Mémoire non volatile, apparail et procéde d'enregistrement
US20030110343A1 (en) * 2001-12-11 2003-06-12 Mitsubishi Denki Kabushiki Kaisha File system including non-volatile semiconductor memory device having a plurality of banks

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1704484A2 *

Also Published As

Publication number Publication date
WO2005066793A2 (fr) 2005-07-21
EP1704484A2 (fr) 2006-09-27
TWI288328B (en) 2007-10-11
TW200601043A (en) 2006-01-01
KR20070007264A (ko) 2007-01-15

Similar Documents

Publication Publication Date Title
WO2005066793A3 (fr) Memoire non volatile et procede avec gestion de bloc de mise a jour non sequentielle
ATE423380T1 (de) Robuste datenvervielfältigung und verbessertes aktualisierungsverfahren in einem nichtflüchtigen mehrbitspeicher
RU2008116179A (ru) Способы управления данными в носителе флэш-памяти
WO2004059651A3 (fr) Memoire non volatile a cache specifique
TW200634823A (en) System and method for use of on-chip non-volatile memory write cache
TW200622611A (en) Memory management device and memory device
WO2008039527A3 (fr) Procédé et appareil de défragmentation
WO2006072945A3 (fr) Procede de gestion d'une memoire flash cellulaire multi-bits avec une fiabilite et une performance accrues
WO2007076378A3 (fr) Acces en mode double pour dispositifs de stockage non-volatiles
CN102253898B (zh) 一种图像数据的内存管理方法及装置
WO2005059966A3 (fr) Utilisation des blocs d'une memoire tour a tour pour reduire au maximum les cycles d'ecriture
JP2009026271A5 (fr)
CN106055489A (zh) 存储器装置与其操作方法
JP2007234026A5 (fr)
WO2005076745A3 (fr) Procede de gestion d'une memoire flash multibit multicellulaire
TW200638425A (en) Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same
RU2012132643A (ru) Эффективное использование гибридных носителей в архитектурах кэш-памяти
JP2009503738A5 (fr)
GB2485732A (en) Container marker scheme for reducing write amplification in solid state devices
JP2010503142A5 (fr)
US7512032B2 (en) Electronic device comprising non volatile memory cells with optimized programming and corresponding programming method
JP2008158955A5 (fr)
EP1909175A3 (fr) Procédé de gestion de mémoire et dispositif de terminal portable
WO2005124558A3 (fr) Methode et systeme pour optimiser le nombre de segments de ligne de mot dans un reseau mram segmente
TW200708950A (en) Memory management method and system

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2006547516

Country of ref document: JP

Ref document number: 1020067013317

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 2004815767

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 200480042129.3

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2004815767

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067013317

Country of ref document: KR