WO2005064357A3 - Flux guides for magnetic field sensors and memories - Google Patents

Flux guides for magnetic field sensors and memories Download PDF

Info

Publication number
WO2005064357A3
WO2005064357A3 PCT/IB2004/052834 IB2004052834W WO2005064357A3 WO 2005064357 A3 WO2005064357 A3 WO 2005064357A3 IB 2004052834 W IB2004052834 W IB 2004052834W WO 2005064357 A3 WO2005064357 A3 WO 2005064357A3
Authority
WO
WIPO (PCT)
Prior art keywords
sensing element
flux guides
field
flux
sensors
Prior art date
Application number
PCT/IB2004/052834
Other languages
French (fr)
Other versions
WO2005064357A2 (en
Inventor
Le Kim Phan
Original Assignee
Koninkl Philips Electronics Nv
Le Kim Phan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Le Kim Phan filed Critical Koninkl Philips Electronics Nv
Publication of WO2005064357A2 publication Critical patent/WO2005064357A2/en
Publication of WO2005064357A3 publication Critical patent/WO2005064357A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)

Abstract

A magnetic sensor has a magneto resistive sensing element (210) having layers of magnetic material and one or more flux guides (120) for concentrating the field onto the sensing element, the flux guide comprising a part of one or more of the same layers used for the sensing element. By using the same layer or layers for the flux guide the guide layer can be formed in the same step as the corresponding layer of the sensing element. Such sensors can be integrated in MRAM chips. Flux guides can be used to rotate the field differently for each of 2 parallel sensing elements, to enable 2D field sensors. As there is now no need for orthogonal exchange bias directions for the two sensors, they can be integrated more easily. Flux guides can also be used to concentrate the field for writing MRAM cells, and hence reduce write current.
PCT/IB2004/052834 2003-12-23 2004-12-16 Flux guides for magnetic field sensors and memories WO2005064357A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03104936 2003-12-23
EP03104936.4 2003-12-23

Publications (2)

Publication Number Publication Date
WO2005064357A2 WO2005064357A2 (en) 2005-07-14
WO2005064357A3 true WO2005064357A3 (en) 2005-10-13

Family

ID=34717245

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2004/052834 WO2005064357A2 (en) 2003-12-23 2004-12-16 Flux guides for magnetic field sensors and memories

Country Status (2)

Country Link
TW (1) TW200528739A (en)
WO (1) WO2005064357A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101629818B1 (en) 2013-11-14 2016-06-13 알프스 덴키 가부시키가이샤 Magnetic detecting device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795862B2 (en) * 2007-10-22 2010-09-14 Allegro Microsystems, Inc. Matching of GMR sensors in a bridge
US7977941B2 (en) * 2009-02-25 2011-07-12 Everspin Technologies, Inc. Magnetic field sensing device
GB201117446D0 (en) * 2011-10-10 2011-11-23 Univ York Method of pinning domain walls in a nanowire magnetic memory device
US9341684B2 (en) 2013-03-13 2016-05-17 Plures Technologies, Inc. Magnetic field sensing apparatus and methods
CN104656045B (en) 2013-11-17 2018-01-09 爱盛科技股份有限公司 Magnetic field sensing module, measuring method and manufacturing method of magnetic field sensing module
CN107479010B (en) * 2016-06-07 2019-06-04 江苏多维科技有限公司 A kind of magnetic resistance sensor with bucking coil
US10816615B2 (en) 2017-05-19 2020-10-27 Asahi Kasei Microdevices Corporation Magnetic sensor
WO2019139110A1 (en) * 2018-01-11 2019-07-18 Tdk株式会社 Magnetic sensor
CN111816761B (en) * 2019-04-11 2024-04-12 上海磁宇信息科技有限公司 Pseudo-magnetic tunnel junction unit
US11187764B2 (en) 2020-03-20 2021-11-30 Allegro Microsystems, Llc Layout of magnetoresistance element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455626A (en) * 1983-03-21 1984-06-19 Honeywell Inc. Thin film memory with magnetoresistive read-out
US5898547A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
US6165329A (en) * 1992-12-03 2000-12-26 Commissariat A L'energie Atomique Multilayer magnetic transducer and structure having a high magnetoresistance and process for the production of the structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455626A (en) * 1983-03-21 1984-06-19 Honeywell Inc. Thin film memory with magnetoresistive read-out
US6165329A (en) * 1992-12-03 2000-12-26 Commissariat A L'energie Atomique Multilayer magnetic transducer and structure having a high magnetoresistance and process for the production of the structure
US5898547A (en) * 1997-10-24 1999-04-27 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101629818B1 (en) 2013-11-14 2016-06-13 알프스 덴키 가부시키가이샤 Magnetic detecting device

Also Published As

Publication number Publication date
TW200528739A (en) 2005-09-01
WO2005064357A2 (en) 2005-07-14

Similar Documents

Publication Publication Date Title
EP1494295A4 (en) Magnetoresistance effect element and magnetic memory device
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
JP5553917B2 (en) MTJ element, manufacturing method thereof, and MRAM device
WO2004029973A3 (en) Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element
TWI240272B (en) MRAM with asymmetric clad conductor
WO2005079528A3 (en) Spin transfer magnetic element having low saturation magnetization free layers
TW200626922A (en) Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
TWI529709B (en) Memory devices with series-interconnected magnetic random access memory cells
WO2004012197A3 (en) Magnetoresistive random access memory with soft magnetic reference layer
WO2005112034A3 (en) Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
WO2005082061A3 (en) Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
WO2005064357A3 (en) Flux guides for magnetic field sensors and memories
JP2006140468A (en) Magnetic ram
KR20140071260A (en) Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer
KR20160004905A (en) Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
MY117184A (en) Low moment/high coercivity pinned layer for magnetic tunnel junction sensors
WO2003036734A2 (en) Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
WO2003036734A1 (en) Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
JP2004006752A5 (en)
JP2003197876A (en) Magnetic ram
CN102385043A (en) Magnetic tunnel junction (MTJ) triaxial magnetic field sensor and packaging method thereof
EP1450177A3 (en) Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer
ATE421756T1 (en) SENSOR LAYER MADE OF SYNTHETIC FERRI MAGNET FOR HIGH DENSITY MRAM USES
TWI435324B (en) Magnetic tunnel junction current sensors
TW200529224A (en) Magnetic memory device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase