WO2019139110A1

WO2019139110A1 - Magnetic sensor

Info

Publication number: WO2019139110A1
Application number: PCT/JP2019/000639
Authority: WO
Inventors: 秀一大川; 承彬林
Original assignee: Tdk株式会社
Priority date: 2018-01-11
Filing date: 2019-01-11
Publication date: 2019-07-18
Also published as: JPWO2019139110A1

Abstract

[Problem] To provide a magnetic sensor that makes it possible to improve the sensitivity of magnetic field detection as compared to when a flat gap is used. [Solution] Provided are a magnet layer 2 formed in a first layer Z1, magnet layers 3, 4 formed in a second layer Z2, and magnetosensitive elements R1, R2 formed in a third layer Z3 located between the first layer Z1 and the second layer Z2. The magnetosensitive elements R1, R2 are disposed at positions overlapping with the magnet layer 2 and the magnet layers 3, 4 as seen in plan view. According to the present invention, a three-dimensional gap is formed by the magnet layer 2 and the magnet layers 3, 4, and the magnetosensitive elements R1, R2 are disposed on a magnetic path formed by this gap, therefore making it possible to curb a magnetic flux component flowing from the magnet layer 2 directly to the magnet layers 3, 4, while also narrowing the gap. Due to this configuration, it is possible to improve the sensitivity of magnetic field detection as compared to when a flat gap is used.

Description

Magnetic sensor

The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor in which a magnetosensitive element is disposed on a magnetic path formed by a gap between two magnetic layers.

Magnetic sensors using magnetosensitive elements are widely used in ammeters and magnetic encoders. As described in

Patent Documents

1 and 2, the substrate on which the magnetic sensor is formed may be provided with a magnetic layer for efficiently collecting the magnetic flux in the magnetosensitive element. However, in the magnetic sensors described in

Patent Documents

1 and 2, it is difficult to enhance the detection sensitivity of the magnetic field because the gap formed by the two magnetic layers is planar. Hereinafter, this problem will be more specifically described with reference to the drawings.

FIG. 30 is a schematic cross-sectional view showing a first layout using planar gaps.

In the layout shown in FIG. 30,

magnetic layers

8 and 9 extending in the x direction are provided, and these are all formed in the same layer. That is, the positions of the

magnetic layers

8 and 9 in the z direction are the same. Here, the x direction is a plane direction parallel to the element formation surface of the substrate, and the z direction is a lamination direction perpendicular to the element formation surface of the substrate. The magnetosensitive element R is disposed in the gap G formed by the

magnetic layers

8 and 9. Thus, for example, the magnetic flux φ flowing from the magnetic layer 9 to the magnetic layer 8 can be applied to the magnetosensitive element R. However, in the layout shown in FIG. 30, since the magnetosensitive element R is disposed in the same layer as the

magnetic layers

8 and 9, the width W _GX in the x direction of the gap G is equal to the width in the x direction of the magnetosensitive element R. It must be larger than W _RX (W _GX > W _RX ). For this reason, the width W _GX of the gap G inevitably becomes large, and the leakage of the magnetic flux increases, which causes a problem that the detection sensitivity of the magnetic field is lowered. In order to reduce the width W _{GX of the} gap G, the width W _{RX of the} magnetosensitive element R may be reduced. However, in this case, the sensitivity of the magnetosensitive element R itself is lowered.

FIG. 31 is a schematic cross-sectional view showing a second layout using planar gaps.

The layout shown in FIG. 31 is different from the first layout shown in FIG. 30 in that the magnetosensitive elements R are disposed in layers different from the

magnetic layers

8 and 9. Thus, if the magnetosensitive element R is disposed in a layer different from the

magnetic layers

8 and 9, the width W _{GX of the} gap G can be set equal to or less than the width W _{RX of the} magnetosensitive element R. Thus, it is possible to reduce the leakage of the magnetic flux. In the second layout shown in FIG. 31, the width W _{GX of the} gap G is substantially the same as the width W _{RX of the} magnetosensitive element R (W _GX ≒ W _RX ). However, even in this case, in order to ensure sufficient sensitivity of the magnetosensitive element R itself, it is necessary to secure the width W _{RX of the} magnetosensitive element R to some extent, so the width W _{GX of the} gap G is felt Even if the width W _{RX of} the magnetic element R is set to be substantially the same, the leakage of the magnetic flux can not be sufficiently reduced.

FIG. 32 is a schematic cross-sectional view showing a third layout using planar gaps.

The layout shown in FIG. 32 is different from the second layout shown in FIG. 31 in that the width W _{GX of the} gap G is set sufficiently narrower than the width W _{RX of the} magnetosensitive element R (W _GX < W _RX ). According to such a layout, it is possible to significantly reduce the leakage of the magnetic flux. However, in the layout shown in FIG. 32, most of the magnetic flux φ does not pass through the magnetosensitive element R and directly flows from the magnetic layer 9 to the magnetic layer 8, so the detection sensitivity of the magnetic field is rather lowered.

Patent No. 5297539 gazette JP, 2017-133889, A

Thus, in a magnetic sensor using a planar gap, it has not been easy to enhance the detection sensitivity of the magnetic field.

Therefore, an object of the present invention is to provide a magnetic sensor capable of enhancing the detection sensitivity of a magnetic field as compared with the case where a planar gap is used.

A magnetic sensor according to one aspect of the present invention comprises a first magnetic layer formed in a first layer, a second magnetic layer formed in a second layer different from the first layer, and A magnetosensitive element formed in the third layer located between the first layer and the second layer, the magnetosensitive element being located at a position overlapping the first and second magnetic layers in a plan view It is characterized by being arranged.

According to the present invention, the three-dimensional gap is formed by the first magnetic layer and the second magnetic layer, and the magnetosensitive element is disposed on the magnetic path formed by the gap. While narrowing, it is possible to suppress the magnetic flux component flowing directly from the first magnetic layer to the second magnetic layer. This makes it possible to enhance the detection sensitivity of the magnetic field as compared to the case where a planar gap is used. In particular, if a magnetosensitive element having sensitivity in the stacking direction of the first to third layers is used, it is possible to obtain extremely high detection sensitivity as compared with the prior art.

In the present invention, the first magnetic layer and the second magnetic layer overlap each other in plan view, and the magnetosensitive element is formed, in plan view, with both the first and second magnetic layers. It may have overlapping portions. According to this, it is possible to apply more magnetic flux to the magnetosensitive element.

In the present invention, the magnetosensitive element may overlap with both the first and second magnetic layers in plan view. According to this, it is possible to apply even more magnetic flux to the magnetosensitive element.

In the present invention, the first magnetic layer and the second magnetic layer have overhang portions overlapping each other without overlapping with the magnetosensitive element in plan view, and the width of the overhang portion is the magnetosensitive element It may be narrower than the width of. According to this, it is possible to further reduce the magnetic flux component flowing directly from the first magnetic layer to the second magnetic layer.

A magnetic sensor according to another aspect of the present invention comprises a first magnetic layer formed in a first layer, and a second magnetic layer formed in a second layer different from the first layer. A magnetosensitive element formed in a third layer located between the first layer and the second layer, wherein the first magnetic layer and the second magnetic layer overlap each other in plan view Alternatively, the gap may be formed in the planar direction, and the magnetic sensing element may be disposed at a position where the width is equal to or greater than the gap and which overlaps the gap in a plan view.

According to the present invention, the three-dimensional and flat point gap is formed by the first magnetic layer and the second magnetic layer, and the magnetosensitive element is disposed on the magnetic path formed by the gap. The flux component flowing directly from the first magnetic layer to the second magnetic layer can be suppressed while making the width of the magnetosensitive element equal to or larger than the width of the gap in the planar direction. This makes it possible to enhance the detection sensitivity of the magnetic field as compared to the case where a mere planar gap is used.

In this case, the ratio of the width of the gap to the width of the magnetosensitive element may be more than 0 times and not more than 0.9 times. According to this, it is possible to obtain high sensitivity which can not be obtained by the method of forming the first magnetic layer and the second magnetic layer in the same layer.

The magnetic sensor according to the present invention may further include an external magnetic body covering the first magnetic body layer. According to this, it is possible to enhance the selectivity of the magnetic flux in the vertical direction.

In the present invention, the first magnetic layer is separated into the first and second regions, and the magnetosensitive device includes the first and second magnetosensitive devices connected in series, and the second magnetic material layer is formed. The body layer is disposed between the first and second regions of the first magnetic layer in plan view, and the first magnetosensitive element is formed of the first region of the first magnetic layer and the second region of the first magnetic layer. The magnetic sensing element is disposed on the magnetic path formed by the gap located between the magnetic layers, and the second magnetosensitive element is located between the second region of the first magnetic layer and the second magnetic layer. It may be disposed on the magnetic path formed by the gap. According to this, it is possible to obtain higher detection accuracy.

In the present invention, the magnetosensitive element is preferably a magnetoresistance element.

As described above, according to the present invention, since the magnetosensitive element is disposed on the magnetic path formed by the three-dimensional gap, the detection sensitivity of the magnetic field is enhanced compared to the case where the two-dimensional gap is used. It becomes possible.

FIG. 1 is a schematic plan view showing the configuration of a magnetic sensor 1 according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view along the line AA of FIG. FIG. 3 is a schematic cross-sectional view showing a first variation of the gap G1. FIG. 4 is a schematic cross-sectional view showing a second variation of the gap G1. FIG. 5 is a schematic cross-sectional view showing a third variation of the gap G1. FIG. 6 is a schematic cross-sectional view showing a fourth variation of the gap G1. FIG. 7 is a schematic cross-sectional view showing a fifth variation of the gap G1. FIG. 8 is a schematic cross-sectional view showing a sixth variation of the gap G1. FIG. 9 is a schematic cross-sectional view showing a seventh variation of the gap G1. FIG. 10 is a schematic cross-sectional view of a magnetic sensor according to a first modification of the first embodiment. FIG. 11 is a schematic cross-sectional view of a magnetic sensor according to a second modification of the first embodiment. FIG. 12 is a schematic cross-sectional view of a magnetic sensor according to a third modification of the first embodiment. FIG. 13 is a graph showing the simulation result of the relationship between the gap width W ₀ and the sensitivity. FIG. 14 is a schematic perspective view showing the appearance of the magnetic sensor 100 according to the second embodiment of the present invention. FIG. 15 is a schematic exploded perspective view of the magnetic sensor 100. As shown in FIG. FIG. 16 is a schematic cross-sectional view along the line AA shown in FIG. FIG. 17 is a schematic plan view for explaining the structure of the element forming surface 21 of the sensor substrate 20. As shown in FIG. FIG. 18 is a schematic cross-sectional view taken along the line BB shown in FIG. FIG. 19 is a circuit diagram for explaining the connection between the magnetosensitive elements R1 to R4 and the bonding pads 51 to 54. As shown in FIG. FIG. 20 is a schematic cross-sectional view for illustrating the configuration of the main part of the magnetic sensor 101 according to the first modification. FIG. 21 is a schematic plan view for illustrating the configuration of the main part of a magnetic sensor 102 according to the second modification. FIG. 22 is a schematic plan view for illustrating the configuration of the main part of a magnetic sensor 103 according to a third modification. FIG. 23 is a schematic plan view for illustrating the configuration of the main part of the magnetic sensor 104 according to the fourth modification. FIG. 24 is a schematic plan view for illustrating the configuration of the main part of a magnetic sensor 105 according to a fifth modification. FIG. 25 is a schematic cross-sectional view along the line DD shown in FIG. FIG. 26 is a schematic plan view for illustrating the configuration of the main part of the magnetic sensor 106 according to the sixth modification. FIG. 27 is a schematic plan view for illustrating the structure of the main part of the magnetic sensor 107 according to the seventh modification. FIG. 28 is a diagram for explaining how magnetic flux φ is evenly distributed. FIG. 29 is a schematic perspective view for illustrating the configuration of the magnetic sensor 108 according to the eighth modification. FIG. 30 is a schematic cross-sectional view showing a first layout using planar gaps. FIG. 31 is a schematic cross-sectional view showing a second layout using planar gaps. FIG. 32 is a schematic cross-sectional view showing a third layout using planar gaps.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment
FIG. 1 is a schematic plan view showing the configuration of a magnetic sensor 1 according to a first embodiment of the present invention. 2 is a schematic cross-sectional view taken along the line AA of FIG.

As shown in FIGS. 1 and 2, the magnetic sensor 1 according to the present embodiment includes magnetic layers 2 to 4 and magnetosensitive elements R1 and R2. The magnetic sensing elements R1 and R2 are not particularly limited as long as the physical characteristics change with the magnetic flux density, but it is preferable that the magnetic sensing elements R1 and R2 be magnetic resistance elements whose electric resistance changes according to the direction of the magnetic field. In the present embodiment, the sensitivity directions of the magnetosensitive elements R1 and R2 are in the directions indicated by the arrows E1 and E2 in FIG. That is, the sensitivity direction of the magnetosensitive element R1 is directed to the positive side in the z direction, and the sensitivity direction of the magnetosensitive element R2 is directed to the negative side in the z direction. In addition to or in place of this, the magnetosensitive elements R1 and R2 may have sensitivity in the direction (plus side in the x direction) indicated by the arrow C in FIG.

The magnetic layers 2 to 4 are layers constituting a magnetic path in the xy plane. Although not particularly limited, the magnetic layers 2 to 4 may be a film made of a composite magnetic material in which a magnetic filler is dispersed in a resin material, and may be made of a soft magnetic material such as nickel or permalloy. It may be a thin film or a foil, or may be a thin film or a bulk sheet made of ferrite or the like. The magnetic sensor 1 according to the present embodiment changes the physical characteristics of the magnetosensitive elements R1 and R2 by collecting the magnetic flux φ in the z direction by the magnetic layer 2 and distributing it to the

magnetic layers

3 and 4. As described above, the sensitivity directions of the magnetosensitive elements R1 and R2 are in the directions indicated by the arrows E1 and E2 in FIG. 2, or they are aligned in the direction indicated by the arrow C. When the magnetic flux φ in the z direction is applied, it is possible to obtain differential signals from the magnetosensitive elements R1 and R2. This makes it possible to detect the magnetic flux density of the magnetic flux φ.

As shown in FIG. 2, the magnetic layer 2 and the

magnetic layers

3 and 4 are formed in different layers. That is, the magnetic layer 2 is formed in the first layer Z1, and the

magnetic layers

3 and 4 are formed in the second layer Z2 different in position in the z direction from the first layer Z1. A third layer Z3 in which the magnetosensitive elements R1 and R2 are formed is provided between the first layer Z1 and the second layer Z2. The second layer Z2 and the third layer Z3 are separated by the insulating layer 5, and the third layer Z3 and the first layer Z1 are separated by the insulating layer 6. Each of these layers can be laminated on the surface of a substrate or the like. In this case, the surface of the substrate constitutes the xy plane, and the stacking direction of the insulating

layers

5 and 6 is the z direction.

In the present embodiment, a gap G1 in the z direction is formed between an end of the magnetic layer 2 in the x direction (left side) and an end of the magnetic layer 3 in the x direction (right side), The magnetosensitive element R1 is disposed on the magnetic path formed by the gap G1. Similarly, a gap G2 in the z direction is formed between the other (right) end of the magnetic layer 2 in the x direction and the one (left) end of the magnetic layer 4 in the x direction. The magnetic sensing element R2 is disposed on the magnetic path formed by

The magnetic layer 2 and the

magnetic layers

3 and 4 may have an overlap in the z direction or may not have an overlap in the z direction, and the edge positions in the x direction coincide with each other. It does not matter. In any case, since the gaps G1 and G2 formed by the magnetic layer 2 and the

magnetic layers

3 and 4 are three-dimensional, the widths of the gaps G1 and G2 are smaller than in the case where a planar gap is used. It can be narrowed. For example, as shown in FIG. 2, when the magnetic layer 2 and the

magnetic layers

3 and 4 overlap in the z direction, the widths of the gaps G1 and G2 are defined by the thicknesses of the insulating

layers

5 and 6. . Usually, since the thickness of the insulating layer or the like is considerably smaller than the planar processing accuracy, an extremely narrow gap can be realized by using a three-dimensional gap. Moreover, in the present embodiment, since the magnetosensitive elements R1 and R2 are disposed in the three-dimensional gaps G1 and G2, the widths of the magnetosensitive elements R1 and R2 in the x direction are determined depending on the heights of the gaps G1 and G2 in the z direction. There is no limit.

Hereinafter, the region B shown in FIG. 2, that is, some variations of the gap G1 will be described. The configuration of the gap G1 described below is also applicable to the gap G2.

FIG. 3 is a schematic cross-sectional view showing a first variation of the gap G1.

In the first variation shown in FIG. 3, the magnetic layer 2 and the magnetic layer 3 overlap in the z direction, and the whole of the magnetosensitive element R1 is in both the

magnetic layers

2 and 3 and in the z direction. It is an example that overlaps with. Here, assuming that the width in the x direction of the overlapping portion of the magnetic layer 2 and the magnetic layer 3 is W ₂₃ and the width in the x direction of the magnetosensitive element R 1 is W _RX :
W ₂₃ > W _RX
It is. The height in the z direction of the gap G1 is _{W _GZ,} regardless of the value of _{W 23} and _{W RX,} can be controlled by the thickness of the insulating

layers

5 and 6. For this reason, the value of W _GZ can be made significantly smaller than W ₂₃ and W _RX . According to the configuration shown in FIG. 3, for example, the magnetic flux φ flowing from the magnetic layer 2 to the magnetic layer 3 is applied to the magnetosensitive element R1 in the gap G1, and the physics of the magnetosensitive element R1 is caused by its z direction component or x direction component. Characteristics change. In particular, since the value of W _GZ can be made very small, it is possible to largely change the physical characteristics of the magnetic sensing element R1 when the sensitivity direction of the magnetic sensing element R1 is in the z direction. However, not all the magnetic flux φ passing through the gap G1 is directed in the z direction, but is directed in an oblique direction in which the z direction component and the x direction component are mixed, so the sensitivity direction of the magnetosensitive element R1 is the x direction It is possible to change the physical characteristics of the magnetosensitive element R1 sufficiently even in the case of Here, in the configuration shown in FIG. 3, an overhang portion inevitably occurs in which the

magnetic layers

2 and 3 overlap each other in plan view and do not overlap the magnetosensitive element R1. The width W _OH in the x direction of the overhang portion is not particularly limited, but as shown by the broken line, if the width W _OH is too large, bypassing from the magnetic layer 2 to the magnetic layer 3 without passing through the magnetosensitive element R1 Since the magnetic flux φ ₀ increases, the width W _OH is preferably smaller than the width W _{RX of the} magnetosensitive element R1.

FIG. 4 is a schematic cross-sectional view showing a second variation of the gap G1.

In the second variation shown in FIG. 4, the width W ₂₃ where the magnetic layer 2 and the magnetic layer 3 overlap and the width W _{RX of the} magnetosensitive element R 1 are almost equal (W ₂₃ ≒ W _RX ), and the overhang portion is It differs from the first variation in that it is almost nonexistent. In other words, one end (left side) of the magnetic layer 2 in the x direction substantially coincides with one end (left side) of the magnetic sensing element R1 in the x direction, and the magnetic layer 3 in the x direction The end of one (right side) substantially coincides with the end of the other (right side) in the x direction of the magnetosensitive element R1. According to the configuration shown in FIG. 4, since the bypass of the magnetic flux via the overhang portion is small and most of the magnetic flux passes through the magnetosensitive element R1, it is possible to obtain higher sensitivity than the first variation. It becomes.

FIG. 5 is a schematic cross-sectional view showing a third variation of the gap G1.

The third variation shown in FIG. 5 is a second variation in that the width W _{23 at} which the magnetic layer 2 and the magnetic layer 3 overlap is smaller than the width W _{RX of the} magnetosensitive element R 1 (W ₂₃ <W _RX ). And is different. As a result, in a plan view, a portion occurs where the magnetic layer 2 and the magnetosensitive element R1 overlap but the magnetic layer 3 does not overlap, and the magnetic layer 3 and the magnetosensitive element R1 overlap but the magnetic layer 2 is heavy There will be parts that do not The width in the x direction of the former is W _{2 R} , and the width in the x direction of the latter is W _{3 R.} As exemplified by the configuration shown in FIG. 5, one or both of the

magnetic layers

2 and 3 may have a portion that does not overlap with the magnetic sensing element R1 in plan view. In this case, by appropriately designing the widths W ₂₃ , W _2R , W _{3R and the} like, it is possible to increase the x-direction component of the magnetic flux in the gap G1. Therefore, this example is effective when the magnetosensitive element R1 has sensitivity in the x direction.

FIG. 6 is a schematic cross-sectional view showing a fourth variation of the gap G1.

The fourth variation shown in FIG. 6 is different from the third variation in that the magnetic layer 2 and the magnetic layer 3 do not overlap in plan view, and the positions of the end portions in the x direction substantially coincide with each other. doing. In this case, the width W _{RX of the} magnetosensitive element R1 is
W _RX W W _{2 R} + W _{3 R}
It becomes. As the configuration shown in FIG. 6 exemplifies, the magnetic layer 2 and the magnetic layer 3 may not have an overlap in plan view. In this case, although the leakage of the magnetic flux in the gap G1 is somewhat increased, it is possible to further enhance the x-direction component of the magnetic flux in the gap G1. Therefore, this example is effective when the magnetosensitive element R1 has sensitivity in the x direction.

FIG. 7 is a schematic cross-sectional view showing a fifth variation of the gap G1.

In the fifth variation shown in FIG. 7, the magnetic layer 2 and the magnetic layer 3 do not overlap in a plan view, whereby the magnetosensitive element R1 does not overlap with any of the

magnetic layers

2 and 3 in a plan view. It differs from the fourth variation in that it has a portion. However, the magnetosensitive element R1 partially overlaps with the magnetic layer 2 and the magnetic layer 3, and the widths thereof are W _2R and W _3R , respectively. Width in the x-direction of a portion of one not to overlap of the

magnetic layers

2 and 3 is W _0, the sensitive element R1 are overlapped by a gap G1 in plan view in part corresponding to the width W _0. As the width W ₀ becomes larger, the leakage of the magnetic flux increases accordingly, but in the example shown in FIG. 7, since the width W ₀ is smaller than the width W _RX in the x direction of the magnetosensitive element R1, the conventional magnetic sensor As compared with the case where a planar gap is used, it is possible to obtain high detection sensitivity. Further, as compared with the example shown in FIG. 32, it is possible to apply a magnetic flux φ of a stronger z-direction component to the magnetosensitive element R1.

FIG. 8 is a schematic cross-sectional view showing a sixth variation of the gap G1.

The sixth variation shown in FIG. 8 is that the width W ₀ of the gap in the x direction of the magnetic layer 2 and the magnetic layer 3 and the width W _{RX of the} magnetosensitive element R 1 are substantially equal (W ₀ WW _RX ) It is different from the fifth variation. In other words, one end (left side) of the magnetic layer 2 in the x direction substantially coincides with one end (right side) in the x direction of the magnetosensitive element R1, and x of the magnetic layer 3 One end (right side) in the direction substantially coincides with the other end (left side) in the x direction of the magnetosensitive element R1. According to the configuration shown in FIG. 8, although the leakage of the magnetic flux is further increased, the width W ₀ is substantially equal to the width W _RX in the x direction of the magnetosensitive element R 1. It is possible to obtain high detection sensitivity as compared with the case of using a typical gap. Further, as compared with the example shown in FIG. 31, it is possible to apply a magnetic flux φ of a stronger z-direction component to the magnetosensitive element R1.

FIG. 9 is a schematic cross-sectional view showing a seventh variation of the gap G1.

The seventh variation shown in FIG. 9 is different from the fifth or sixth variation in that the magnetic layer 2, the magnetic layer 3 and the magnetic sensing element R1 have portions that do not overlap in plan view. doing. Magnetic layer 2, the width in the x direction of a portion where the magnetic layer 3 and the magnetic sensing element R1 do not overlap any is W _1. Even with this configuration, if towards the width _{W 3R} overlapping the magnetic layer 3 and the magnetic sensing element R1 (or _{W 2R)} is larger than the width _{W 1} of the _{(W 2R} or _W _{3R> W} 1) Since the width W ₀ of the gap in the x direction of the magnetic layer 2 and the magnetic layer 3 is smaller than the width W _{RX of the} magnetosensitive element R ₁ (W ₀ <W _RX ), a planar gap is used It is possible to obtain high detection sensitivity as compared with.

As described above, in the magnetic sensor 1 according to the present embodiment, the magnetic layer 2 and the

magnetic layers

3 and 4 form the three-dimensional gaps G1 and G2, and the magnet formed by the gaps G1 and G2 Since the magnetosensitive elements R1 and R2 are disposed on the road, the height W _GZ of the gaps G1 and G2 in the z direction is narrowed without reducing the width W _RX of the magnetosensitive elements R1 and R2 in the x direction. be able to. This makes it possible to obtain higher detection sensitivity than when using a planar gap.

The positional relationship between the magnetic layer 2 and the

magnetic layers

3 and 4 is not limited to the positional relationship shown in FIG. 2, and as in the first modification shown in FIG. It may be disposed in the layer Z2, and the

magnetic layers

3 and 4 may be disposed in the first layer Z1. Further, the positional relationship between the magnetosensitive elements R1 and R2 is not limited to the positional relationship shown in FIG. 2, and the magnetosensitive element R1 is formed in the fourth layer Z4 as in the second modification shown in FIG. Alternatively, the magnetosensitive element R2 may be formed in the third layer Z3. In the example shown in FIG. 11, the first layer Z1 and the fourth layer Z4 are separated by the insulating layer 15, and the fourth layer Z4 and the fifth layer Z5 are separated by the insulating layer 16. Then, if the magnetic layer 3 is formed in the fifth layer Z5 and the sensitivity direction of the magnetosensitive elements R1 and R2 is directed to the direction indicated by the arrows E1 and E2 in FIG. It is possible to obtain a differential signal from R2. According to this, the sensitivity directions of the magnetosensitive elements R1 and R2 can be made the same. Furthermore, as in the third modification shown in FIG. 12, the magnetic layer 2 is transitioned from the first layer Z1 to the second layer Z2 and the magnetic layer 3 is disposed in the first layer Z1. The sensitivity directions of the magnetosensitive elements R1 and R2 may be directed in the direction indicated by the arrows E1 and E2 in FIG. 12 (or the opposite direction).

FIG. 13 is a graph showing the simulation result of the relationship between the gap width W ₀ and the sensitivity, and the width W _{RX of the} magnetosensitive element R 1 is 5 μm, and the center position of the gap in the x direction and x of the magnetosensitive element R 1 The change of the sensitivity due to the change of the width W ₀ of the gap is shown by the plot of ◆ with the center position in the direction matched. In FIG. 13, for comparison, the characteristic of the case where the magnetic layers 2 to 4 are formed in the same layer (see FIGS. 31 and 32) is shown by a plot of Δ. Further, regarding the value of sensitivity, the sensitivity obtained when the magnetic layer 2 to 4 is formed in the same layer and the width W _{0 of} the gap is 7 μm is 1.

As shown in FIG. 13, when the magnetic layers 2 to 4 are formed in the same layer, the highest sensitivity (2.2 times) is obtained when the width W _{0 of} the gap is 3 μm. On the other hand, if the three-dimensional gaps G1 and G2 are formed by arranging the magnetic layer 2 and the

magnetic layers

3 and 4 in different layers as in the present embodiment, the magnetic layers 2 to 4 are the same layer. Higher sensitivity is obtained in the whole area than in the case of forming in. In particular, if the width W ₀ of the gap is more than ₀ μm and not more than 4.5 μm, that is, if the ratio of the width W ₀ of the gap to the width W _RX of the magnetosensitive element R 1 is more than 0 and 0.9 times or less It is possible to obtain the sensitivity exceeding the highest sensitivity (2.2 times) in the comparative example.

Second Embodiment
FIG. 14 is a schematic perspective view showing the appearance of the magnetic sensor 100 according to the second embodiment of the present invention. Further, FIG. 15 is a schematic exploded perspective view of the magnetic sensor 100, and FIG. 16 is a schematic cross-sectional view along the line AA shown in FIG.

As shown in FIGS. 14 to 16, the magnetic sensor 100 according to the present embodiment includes a circuit board 10 having an opening 11, a sensor board 20 disposed in the opening 11, and a first fixed to the sensor board 20. The fourth to fourth external magnetic members 31 to 34 are provided. The sensor substrate 20 is a chip component smaller than the circuit substrate 10, and has a magnetosensitive element described later. The first to fourth external magnetic members 31 to 34 are blocks made of a soft magnetic material having high permeability such as ferrite.

The sensor substrate 20 has a substantially rectangular parallelepiped shape, and the first external magnetic body 31 is disposed on the element forming surface 21 constituting the xy plane. As a method of manufacturing the sensor substrate 20, a method of simultaneously forming a large number of sensor substrates 20 on a collective substrate and separating a large number of them is generally used, but the present invention is not limited thereto. Alternatively, individual sensor substrates 20 may be separately manufactured. Although details will be described later, four magnetosensitive elements R1 to R4 and a magnetic layer 40 are formed on the element forming surface 21. Further, four bonding pads 51 to 54 are provided on the element forming surface 21 and are connected to the bonding pads 61 to 64 provided on the circuit substrate 10 via the corresponding bonding wires BW.

Furthermore, the second and third external

magnetic members

32 and 33 are disposed on both sides of the sensor substrate 20 in the x direction. The second and third external

magnetic members

32 and 33 are connected via the fourth external magnetic member 34 located at the bottom of the sensor substrate 20, whereby the second to fourth external magnetic members 32 to 32 are formed. 34 constitute a single magnetic block 35. The magnetic block 35 is disposed to be inserted into the opening 11 of the circuit board 10. The magnetic block 35 is provided with a recess 36 for accommodating the sensor substrate 20. When the sensor substrate 20 is accommodated in the recess 36, the element forming surface 21 of the sensor substrate 20, and the second and third The tips of the external

magnetic members

32 and 33 are close to one another, and constitute substantially the same plane.

Next, each component formed on the element forming surface 21 of the sensor substrate 20 will be described in detail.

FIG. 17 is a schematic plan view for explaining the structure of the element forming surface 21 of the sensor substrate 20. As shown in FIG. FIG. 18 is a schematic cross-sectional view along the line BB shown in FIG.

As shown in FIG. 17, the magnetic material layer 40 is formed on the element forming surface 21 of the sensor substrate 20. Although not particularly limited, the magnetic layer 40 may be a film made of a composite magnetic material in which a magnetic filler is dispersed in a resin material, a thin film made of a soft magnetic material such as nickel or permalloy, or It may be a foil, or it may be a thin film or a bulk sheet made of ferrite or the like.

In the present embodiment, the magnetic layer 40 is divided into a first area 41 to a sixth area 46. Each of the first area 41 to the sixth area 46 is rectangular, and two sides thereof extend in the x direction, and the remaining two sides extend in the y direction. Among these, the first region 41 and the second region 42 are disposed substantially at the center of the element forming surface 21 in the x direction, and are adjacent to each other in the y direction. In addition, the third area 43 and the fifth area 45 are provided on both sides in the x direction of the first area 41 so as to overlap with the end of the first area 41. Similarly, a fourth area 44 and a sixth area 46 are provided on both sides of the second area 42 in the x direction so as to overlap with the end of the second area 42. The third area 43 and the fourth area 44 are adjacent to each other in the y direction, and similarly, the fifth area 45 and the sixth area 46 are adjacent to each other in the y direction.

Although not particularly limited, the width of the first external magnetic body 31 in the y direction is wider than the total width of the first and

second regions

41 and 42 of the magnetic layer 40 in the y direction. Preferably, the entire width in the y direction of the first and

second regions

41 and 42 is covered by the first external magnetic body 31. According to this, even if a deviation occurs in the relative positional relationship between the first external magnetic body 31 and the magnetic body layer 40 at the time of manufacture, the detection accuracy does not significantly decrease. As the positional deviation, in addition to the deviation in the xy direction, rotational deviation is also conceivable.

Here, the first region 41 and the second region 42 of the magnetic layer 40 have the same shape and size as each other, and are line symmetrical with an imaginary straight line L1 extending in the x direction as an axis of symmetry. is there. Due to such a symmetrical shape, the magnetic flux taken in via the first external magnetic body 31 is distributed substantially equally to the first region 41 and the second region 42 of the magnetic layer 40. In addition, the first and

second regions

41 and 42 are arranged so as to be axisymmetrical with the imaginary straight line L2 extending in the y direction as the axis of symmetry.

In addition, the third region 43 and the fourth region 44 of the magnetic layer 40 have the same shape and size as each other, and are line symmetrical with the virtual straight line L1 extending in the x direction as the axis of symmetry. . Due to such a symmetrical shape, the magnetic flux taken in via the second external magnetic body 32 is distributed substantially equally to the third and

fourth regions

43 and 44 of the magnetic body layer 40. Similarly, the fifth region 45 and the sixth region 46 of the magnetic layer 40 have the same shape and size as each other, and are line symmetrical with respect to a virtual straight line L1 extending in the x direction as an axis of symmetry. is there. Due to such a symmetrical shape, the magnetic flux taken in via the third external magnetic body 33 is distributed substantially equally to the fifth and

sixth regions

45 and 46 of the magnetic layer 40. In addition, the third and

fourth regions

43 and 44 and the fifth and

sixth regions

45 and 46 are arranged so as to be line symmetrical with respect to a virtual straight line L2 extending in the y direction as a symmetry axis. .

One end of the first region 41 in the x direction is opposed to one end of the third region 43 in the x direction via a first gap G1 extending in the z direction. In addition, the other end of the first region 41 in the x direction is opposed to one end of the fifth region 45 in the x direction via a fourth gap G4 extending in the z direction. . Similarly, one end of the second region 42 in the x direction is opposed to one end of the fourth region 44 in the x direction via a third gap G3 extending in the z direction. There is. Further, the other end of the second region 42 in the x direction is opposed to one end of the sixth region 46 in the x direction via a second gap G2 extending in the z direction. . As described above, since each of the areas 41 to 46 is rectangular, the length of the end of each of the areas 41 to 46 in the y direction substantially matches the width of the area in the y direction.

As shown in FIGS. 17 and 18, first to fourth magnetosensitive elements R1 to R4 extending in the y direction are disposed in the first to fourth gaps G1 to G4, respectively. In the example shown in FIG. 18, the insulating

layers

24, 25 and 26 are stacked in this order on the surface of the sensor substrate 20, and the surface of the insulating layer 25 constitutes the element forming surface 21. The magnetosensitive elements R1 to R4 are provided on the surface of the insulating layer 25 which is the element forming surface 21, and the third to sixth regions 43 to 46 of the magnetic layer 40 are formed on the surface of the insulating layer 24 located in the lower layer. The first and

second regions

41 and 42 of the magnetic layer 40 are provided on the surface of the insulating layer 26 which is provided and located in the upper layer. Thereby, three-dimensional gaps G1 to G4 are formed, and the magnetosensitive elements R1 to R4 are arranged between the gaps G1 to G4. In the present embodiment, the sensitivity directions of the magnetosensitive elements R1 to R4 are in the directions indicated by the arrows E1 and E2 in FIG. That is, the sensitivity direction of the magnetosensitive elements R1 and R3 is directed to the positive side in the z direction, and the sensitivity direction of the magnetosensitive elements R2 and R4 is directed to the negative side in the z direction. In addition to or instead of this, the magnetosensitive elements R1 to R4 may have sensitivity in the direction (plus side in the x direction) indicated by the arrow C in FIG.

As shown in FIG. 18, the first external magnetic body 31 plays the role of collecting the magnetic flux φ in the z direction and discharging it to the first and

second regions

41 and 42 of the magnetic layer 40. The height of the first external magnetic body 31 in the z direction is not particularly limited, but the selectivity of the magnetic flux in the z direction can be enhanced by increasing the height in the z direction. However, if the height of the first external magnetic body 31 in the z direction is too high, the support of the first external magnetic body 31 may become unstable, so it is high in the range where stable support can be ensured. It is preferable to do.

The magnetic flux φ collected in the first and

second regions

41 and 42 of the magnetic layer 40 through the first external magnetic body 31 is substantially equally distributed to the first and

second regions

41 and 42. Then, the light is emitted to the third to sixth regions 43 to 46 through the first to fourth magnetosensitive elements R1 to R4, respectively. As a result, magnetic flux in opposite directions is applied to the magnetosensitive elements R1 and R3 and the magnetosensitive elements R2 and R4. As described above, since the sensitivity directions of the magnetosensitive elements R1 to R4 are directed in the directions indicated by the arrows E1 and E2 or in the directions indicated by the arrows C, the components of the magnetic flux in the z direction and / or the x direction It will be sensitive to it.

The magnetic flux reaching the third and

fourth regions

43 and 44 of the magnetic layer 40 is collected by the second external magnetic body 32. Similarly, the magnetic flux reaching the fifth and

sixth regions

45 and 46 of the magnetic layer 40 is collected by the third external magnetic body 33.

FIG. 19 is a circuit diagram for explaining the connection between the magnetosensitive elements R1 to R4 and the bonding pads 51 to 54. As shown in FIG.

As shown in FIG. 19, the ground potential Gnd and the power supply potential Vdd are supplied to the

bonding pads

51 and 54, respectively, from the circuit board 10 side. The magnetosensitive elements R1 and R2 are connected in series between the

bonding pads

51 and 54, and the magnetosensitive elements R4 and R3 are connected in series. The connection point of the magnetosensitive elements R3 and R4 is connected to the bonding pad 52, and the connection point of the magnetosensitive elements R1 and R2 is connected to the bonding pad 53. By referring to the potential Va appearing on the bonding pad 53 and the potential Vb appearing on the bonding pad 52 by such a bridge connection, the change of the electrical resistance of the magnetosensitive elements R1 to R4 according to the magnetic flux density is detected with high sensitivity. It becomes possible.

Specifically, since the magnetosensitive elements R1 to R4 all have the same sensitivity direction, the amount of change in resistance of the magnetosensitive elements R1 and R3 positioned on one side with respect to the first external magnetic body 31 There is a difference between the amount of change in resistance of the magnetic sensing elements R2 and R4 located on the other side with respect to the first external magnetic body 31. This difference is doubled by the differential bridge circuit shown in FIG. 19 and appears on the

bonding pads

52 and 53. The circuit board 10 is provided with a voltage detection circuit (not shown), and by detecting the difference between the potentials Va and Vb appearing on the

bonding pads

52 and 53, it becomes possible to measure the magnetic flux density.

Further, in the magnetic sensor 100 according to the present embodiment, the magnetic body layer 40 is provided on the element forming surface 21 of the sensor substrate 20, and the magnetosensitive elements R1 are respectively provided in the four gaps G1 to G4 provided in the magnetic body layer 40. Since R4 to R4 are arranged, the magnetic flux generated by the current flowing to a certain magnetic sensing element does not affect the other magnetic sensing elements. This makes it possible to obtain higher detection accuracy than in the prior art. In addition, since all four gaps G1 to G4 are three-dimensional, it is possible to obtain higher detection sensitivity as compared to the case where planar gaps are used.

Further, since the regions 41 to 46 constituting the magnetic layer 40 are rectangular, it is also possible to suppress Barkhausen noise, which is noticeable when the magnetic layer has a complicated shape. In addition, since the lengths of the magnetosensitive elements R1 to R4 in the y direction can be sufficiently secured, it is also possible to obtain a high S / N ratio.

Furthermore, since the magnetic sensor 100 according to the present embodiment includes the first external magnetic body 31, the magnetic flux in the z direction can be selectively detected. Moreover, in the magnetic sensor 100 according to the present embodiment, since the second external magnetic body 32 and the third external magnetic body 33 are integrated, the magnetic resistance of the magnetic flux flowing around behind the sensor substrate 20 is reduced. You can also.

Hereinafter, some modifications of the magnetic sensor 100 according to the present embodiment will be described.

FIG. 20 is a schematic cross-sectional view for illustrating the configuration of the main part of the magnetic sensor 101 according to the first modification. In the example shown in FIG. 20, the first and

second regions

41 and 42 and the third to sixth regions 43 to 46 of the magnetic layer 40 are located in different layers, and overlap each other. Absent. For this reason, the gaps G1 to G4 in the oblique direction are formed by the first and

second regions

41 and 42 and the third to sixth regions 43 to 46, and the magnetosensitive element R1 is located at a position corresponding to these gaps G1 to G4. To R4 are arranged. In this case, the magnetosensitive elements R1 to R4 and the magnetic layer 40 may have an overlap or may not have an overlap.

FIG. 21 is a schematic plan view for illustrating the configuration of the main part of a magnetic sensor 102 according to the second modification. In the example shown in FIG. 21, the first region 41 and the second region 42 of the magnetic layer 40 are integral and rectangular as a whole. As exemplified by the magnetic sensor 102 according to the second modification, in the present invention, it is not essential that the first region 41 and the second region 42 of the magnetic layer 40 be separated from each other, but both are integrated. It does not matter.

FIG. 22 is a schematic plan view for illustrating the configuration of the main part of a magnetic sensor 103 according to a third modification. In the example shown in FIG. 22, the third region 43 and the fourth region 44 of the magnetic layer 40 are integral and rectangular as a whole, and the fifth region 45 of the magnetic layer 40 and the Six regions 46 are integral and generally rectangular. As exemplified by the magnetic sensor 103 according to the third modification, in the present invention, the third region 43 and the fourth region 44 of the magnetic layer 40 and the fifth region 45 and the sixth region 46 are mutually different. It is not essential to separate, and both may be integrated.

FIG. 23 is a schematic plan view for illustrating the configuration of the main part of the magnetic sensor 104 according to the fourth modification. In the example shown in FIG. 23, the first region 41 and the second region 42 of the magnetic layer 40 are integral and rectangular as a whole, and the third region 43 and the fourth region 44 are integral. The fifth region 45 and the sixth region 46 of the magnetic layer 40 are integral and rectangular as a whole. According to such a configuration, since the planar shape of the magnetic layer 40 is simplified, it is possible to further reduce Barkhausen noise.

FIG. 24 is a schematic plan view for illustrating the configuration of the main part of a magnetic sensor 105 according to a fifth modification. FIG. 25 is a schematic cross-sectional view taken along the line DD shown in FIG.

In the example shown in FIG. 24 and FIG. 25, the first to fourth magnetosensitive elements R1 to R4 are formed of two magnetosensitive elements arranged in the first to fourth gaps G1 to G4, respectively. Specifically, a first magnetosensitive element R1 is formed by two magnetosensitive elements R11 and R12 connected in series, and a second magnetosensitive element R2 is formed by two magnetosensitive elements R21 and R22 connected in series. A third magnetosensitive element R3 is formed of two magnetosensitive elements R31 and R32 configured and connected in series, and a fourth magnetosensitive element R4 is formed of two magnetosensitive elements R41 and R42 connected in series ing. According to this, since a larger magnetoresistive effect can be obtained, it is possible to obtain high detection accuracy without increasing the size of the sensor substrate 20 almost at all. A seventh region 47 of the magnetic layer 40 may be added between two magnetosensitive elements (for example, R11 and R12) connected in series. In addition, the magnetosensitive elements R1 to R4 may be configured by three or more magnetosensitive elements connected in series.

In the example shown in FIG. 25, the magnetosensitive element R1 is composed of two magnetosensitive elements R11 and R12, and a part of the magnetosensitive element R11 overlaps the first and

seventh regions

41 and 47 of the magnetic layer 40. A part of the magnetosensitive element R12 overlaps the third and

seventh regions

43 and 47 of the magnetic layer 40. Here, the seventh region 47 is formed in a layer different from the first and

second regions

41 and 43, thereby forming a three-dimensional gap. That is, the seventh region 47 is formed on the surface of the sensor substrate 20, the magnetosensitive elements R11 and R12 are formed on the surface of the insulating layer 22, and the first and

third regions

41 and 43 are on the surface of the insulating layer 23. It is formed. The other magnetosensitive elements R2 to R4 (not shown) also have the same configuration as that of the magnetosensitive element R1. As described above, when the seventh region 47 is provided in the magnetic layer 40 and the magnetic sensing elements R1 to R4 and the magnetic layer 40 are disposed so as to overlap with each other, leakage magnetic flux is reduced. It becomes possible to obtain.

FIG. 26 is a schematic plan view for illustrating the configuration of the main part of the magnetic sensor 106 according to the sixth modification. In the example shown in FIG. 26, the seventh region 47 of the magnetic layer 40 is divided into a large number in the y direction which is the extending direction of the gap G1. The same configuration is provided on the other gaps G2 to G4 not shown. As described above, when the seventh region 47 of the magnetic layer 40 is divided in the y direction, the flow of the magnetic flux through the gaps G1 to G4 is restricted in the x direction and hardly flows in the y direction. That is, since the magnetic anisotropy is generated by dividing the seventh region 47 of the magnetic layer 40 in the y direction, it is possible to obtain higher detection accuracy.

FIG. 27 is a schematic plan view for illustrating the structure of the main part of the magnetic sensor 107 according to the seventh modification.

In the seventh modification shown in FIG. 27, the first magnetic layer 41 has a first main region M1 located at the center, and a width in the y direction as the first main region M1 separates from the first main region M1 in the x direction. It includes first to fourth convergence regions S1 to S4 which are narrowed. The first main region M1 is a portion covered by the first external magnetic body 31. As described above, the first to fourth convergent regions S1 to S4 are tapered portions whose width in the y direction becomes narrower as the first main region M1 moves away from the first main region M1 in the x direction. The third convergence areas S1 and S3 are located on the minus side (left side) in the x direction with respect to the first main area M1, and the second and fourth convergence areas S2 and S4 are relative to the first main area M1. Located on the plus side (right side) in the x direction.

Here, the first magnetic layer 41 has a two-fold symmetrical shape. Therefore, with the virtual straight line L1 extending in the y direction as the axis of symmetry, the first convergence region S1 and the fourth convergence region S4 are axisymmetric, and the second convergence region S2 and the third convergence region S2 are symmetrical. The convergence region S3 is axisymmetrical. Furthermore, the first convergent region S1 and the third convergent region S3 are axisymmetric with the virtual straight line L2 extending in the x direction as the axis of symmetry, and the second convergent region S4 and the fourth convergent The region S4 is axisymmetrical. Due to such a symmetrical shape, when the magnetic flux taken in via the first external magnetic body 31 is incident on the first main region M1, as shown in FIG. It is distributed substantially equally to the four convergence areas S1 to S4. The distributed magnetic flux φ is increased in magnetic flux density by passing through the first to fourth converging regions S1 to S4 having a tapered shape.

On the other hand, in the second magnetic region 42, the fifth main region M2 and the fifth and seventh convergence regions where the width in the y direction becomes narrower as the second main region M2 separates from the second main region M2 in the x direction (plus side) S5 and S7 are included. Similarly, the third magnetic layer 43 has sixth and eighth convergences in which the width in the y direction becomes narrower as the third main region M3 and the third main region M3 move away from the third main region M3 in the x direction (minus side) Regions S6 and S8 are included. The second main region M2 is located near the end of the sensor substrate 20 on the minus side in the x direction, and thereby approaches the second external magnetic body 32. On the other hand, the third main region M3 is located in the vicinity of the end of the sensor substrate 20 on the plus side in the x direction, and thereby approaches the third external magnetic body 33.

The tip of the fifth convergence region S5 faces the tip of the first convergence region S1 via the first gap G1 extending in the z direction. Further, the tip of the seventh convergence area S7 faces the tip of the third convergence area S3 via the third gap G3 extending in the z direction. Here, the fifth convergence region S5 and the seventh convergence region S7 are line symmetric with the virtual straight line L2 extending in the x direction as an axis of symmetry. Because of such a symmetrical shape, when the magnetic flux taken in via the second external magnetic body 32 is incident on the second main area M2, this magnetic flux is transmitted to the fifth and seventh convergence areas S5 and S7. It is distributed almost equally to the people.

The tip of the sixth convergence region S6 faces the tip of the second convergence region S2 via the second gap G2 extending in the z direction. Further, the tip end of the eighth convergence area S8 faces the tip end of the fourth convergence area S4 via the fourth gap G4 extending in the z direction. Here, the sixth convergence region S6 and the eighth convergence region S8 are line symmetric with the virtual straight line L2 extending in the x direction as an axis of symmetry. Because of such a symmetrical shape, when the magnetic flux taken in via the third external magnetic body 33 is incident on the third main area M3, this magnetic flux is transmitted to the sixth and eighth convergence areas S6 and S8. It is distributed almost equally to the people.

As described above, in the seventh modification, the eight convergent regions S1 to S8 forming the gaps G1 to G4 each have a tapered shape in which the width becomes narrower toward the corresponding magnetosensitive elements R1 to R4. Thus, the density of the magnetic flux applied to the magnetosensitive elements R1 to R4 can be increased. Furthermore, since the first main region M1 included in the first magnetic layer 41 has a wide area connected to all root portions of the four convergence regions S1 to S4, the first outer region The magnetic flux collection effect of the magnetic flux φ through the magnetic body 31 is high, which also makes it possible to obtain high detection accuracy.

FIG. 29 is a schematic perspective view for illustrating the configuration of the magnetic sensor 108 according to the eighth modification. In the example shown in FIG. 29, the sensor substrate 20 is mounted sideways on the surface of the circuit substrate 10 having the xy plane. That is, the element forming surface 21 of the sensor substrate 20 constitutes the xz plane, and the first external magnetic body 31 extends in the y direction. According to such a configuration, it is not necessary to provide the opening 11 in the circuit board 10, and it is possible to selectively detect the magnetic flux in the direction parallel to the main surface of the circuit board 10. In addition, even if the height (the length in the y direction) of the first external magnetic body 31 is increased, the support of the first external magnetic body 31 does not become unstable.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. It is needless to say that they are included in the scope.

DESCRIPTION OF SYMBOLS 1 magnetic sensor 2-4, 8, 9

magnetic material layer

5, 6, 15, 16 insulating layer 10 circuit board 11 opening 20 sensor substrate 21 element forming surface 22 to 26 insulating layer 31 to 34 external magnetic material 35 magnetic block 36 Recesses 40 to 47 Magnetic layer (area)
51 to 54, 61 to 64 Bonding pad 100 to 108 Magnetic sensor BW Bonding wire G, G1 to G4 Gap M1 to M3 Main area R, R1 to R4, R11, R12, R21, R22, R31, R32, R41, R42 Magnetic elements S1 to S8 Convergent region Z1 First layer Z2 Second layer Z3 Third layer

Claims

A first magnetic layer formed in the first layer;
A second magnetic layer formed on a second layer different from the first layer;
A magnetosensitive element formed in a third layer located between the first layer and the second layer;
The magnetic sensor according to claim 1, wherein the magnetic sensing element is disposed at a position overlapping the first and second magnetic layers in plan view.
The first magnetic layer and the second magnetic layer overlap in a plan view,
The magnetic sensor according to claim 1, wherein the magnetic sensing element has a portion overlapping with both of the first and second magnetic layers in a plan view.
The magnetic sensor according to claim 2, wherein the magnetosensitive element entirely overlaps with both of the first and second magnetic layers in plan view.
The first magnetic layer and the second magnetic layer have overhang portions overlapping each other without overlapping with the magnetic sensing element in plan view,
The magnetic sensor according to any one of claims 1 to 3, wherein a width of the overhang portion is narrower than a width of the magnetosensitive element.
A first magnetic layer formed in the first layer;
A second magnetic layer formed on a second layer different from the first layer;
A magnetosensitive element formed in a third layer located between the first layer and the second layer;
The first magnetic layer and the second magnetic layer form a gap in the planar direction without overlapping each other in plan view,
The magnetic sensor according to claim 1, wherein the magnetic sensing element has a width equal to or larger than the gap, and is disposed at a position overlapping the gap in a plan view.
The magnetic sensor according to claim 5, wherein the ratio of the width of the gap to the width of the magnetic sensing element is more than 0 times and not more than 0.9 times.
The magnetic sensor according to any one of claims 1 to 6, further comprising an external magnetic body covering the first magnetic body layer.
The first magnetic layer is separated into first and second regions,
The magnetosensitive device includes first and second magnetosensitive devices connected in series,
The second magnetic layer is disposed between the first and second regions of the first magnetic layer in plan view.
The first magnetic sensing element is disposed on a magnetic path formed by a gap located between the first region of the first magnetic layer and the second magnetic layer.
The second magnetic sensing element is disposed on a magnetic path formed by a gap located between the second region of the first magnetic layer and the second magnetic layer. The magnetic sensor according to any one of claims 1 to 7.
The magnetic sensor according to any one of claims 1 to 8, wherein the magnetosensitive element is a magnetoresistive element.
The magnetic sensor according to any one of claims 1 to 9, wherein the magnetic sensing element has sensitivity in the stacking direction of the first to third layers.