WO2005034194A3 - Repairing damage to low-k dielectric materials using silylating agents - Google Patents
Repairing damage to low-k dielectric materials using silylating agents Download PDFInfo
- Publication number
- WO2005034194A3 WO2005034194A3 PCT/US2004/031995 US2004031995W WO2005034194A3 WO 2005034194 A3 WO2005034194 A3 WO 2005034194A3 US 2004031995 W US2004031995 W US 2004031995W WO 2005034194 A3 WO2005034194 A3 WO 2005034194A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- subjected
- films
- organosilicate glass
- film
- etchant
- Prior art date
Links
- 239000003989 dielectric material Substances 0.000 title 1
- 239000011521 glass Substances 0.000 abstract 4
- 238000004380 ashing Methods 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000003153 chemical reaction reagent Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000012745 toughening agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200480023744.XA CN1839468B (en) | 2003-10-08 | 2004-09-24 | Repairing damage to low-K dielectric materials using silylating agents |
JP2006534058A JP2007508691A (en) | 2003-10-08 | 2004-09-24 | Repair of damage in low dielectric constant dielectric materials using silylating agents |
EP04817126A EP1676303A2 (en) | 2003-10-08 | 2004-09-24 | Repairing damage to low-k dielectric materials using silylating agents |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51002403P | 2003-10-08 | 2003-10-08 | |
US60/510,024 | 2003-10-08 | ||
US10/940,686 US8475666B2 (en) | 2004-09-15 | 2004-09-15 | Method for making toughening agent materials |
US10/940,686 | 2004-09-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005034194A2 WO2005034194A2 (en) | 2005-04-14 |
WO2005034194A3 true WO2005034194A3 (en) | 2005-09-15 |
Family
ID=34426157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/031995 WO2005034194A2 (en) | 2003-10-08 | 2004-09-24 | Repairing damage to low-k dielectric materials using silylating agents |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2007508691A (en) |
CN (1) | CN1839468B (en) |
WO (1) | WO2005034194A2 (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4999454B2 (en) | 2003-01-25 | 2012-08-15 | ハネウェル・インターナショナル・インコーポレーテッド | Repair and recovery of damaged dielectric materials and films |
US7709371B2 (en) | 2003-01-25 | 2010-05-04 | Honeywell International Inc. | Repairing damage to low-k dielectric materials using silylating agents |
US8475666B2 (en) | 2004-09-15 | 2013-07-02 | Honeywell International Inc. | Method for making toughening agent materials |
EP1803149A2 (en) * | 2004-09-15 | 2007-07-04 | Honeywell International, Inc. | Treating agent materials |
JP4591032B2 (en) * | 2004-10-15 | 2010-12-01 | Jsr株式会社 | Surface hydrophobizing composition, surface hydrophobizing method, and semiconductor device manufacturing method |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
JP5019714B2 (en) * | 2005-01-31 | 2012-09-05 | 大陽日酸株式会社 | Damage recovery method for low dielectric constant films |
US7678712B2 (en) | 2005-03-22 | 2010-03-16 | Honeywell International, Inc. | Vapor phase treatment of dielectric materials |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US20070054501A1 (en) * | 2005-08-23 | 2007-03-08 | Battelle Memorial Institute | Process for modifying dielectric materials |
JP5247999B2 (en) * | 2005-09-29 | 2013-07-24 | 東京エレクトロン株式会社 | Substrate processing method and computer-readable storage medium |
US7776754B2 (en) | 2005-10-11 | 2010-08-17 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device |
EP1845132B8 (en) | 2006-04-11 | 2009-04-01 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
TW200802601A (en) | 2006-04-19 | 2008-01-01 | Taiyo Nippon Sanso Corp | Process for recovering damage of insulating film |
JP2008091600A (en) * | 2006-10-02 | 2008-04-17 | Sony Corp | Method for manufacturing semiconductor device |
JP4999419B2 (en) * | 2006-10-12 | 2012-08-15 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing system, and computer-readable storage medium |
US10037905B2 (en) | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US8465991B2 (en) | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
US7500397B2 (en) | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
US20080206997A1 (en) * | 2007-02-26 | 2008-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device |
JP4413947B2 (en) | 2007-06-21 | 2010-02-10 | 株式会社東芝 | Manufacturing method of semiconductor device |
JP5119832B2 (en) | 2007-09-27 | 2013-01-16 | 富士通株式会社 | Interface roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device |
JP2009094183A (en) | 2007-10-05 | 2009-04-30 | Nec Electronics Corp | Method of manufacturing hydrophobic porous membrane |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
EP2406267B1 (en) * | 2009-03-10 | 2019-02-20 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cyclic amino compounds for low-k silylation |
US20110214909A1 (en) * | 2010-03-05 | 2011-09-08 | International Business Machines Corporation | Hydrophobic Silane Coating for Preventing Conductive Anodic Filament (CAF) Growth in Printed Circuit Boards |
CN102856251A (en) * | 2012-09-21 | 2013-01-02 | 复旦大学 | Method for removing hydroxylation on surface of low dielectric constant medium |
CN104143524A (en) * | 2013-05-07 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for semiconductor device |
CN107345137A (en) * | 2016-05-04 | 2017-11-14 | Oci有限公司 | The etching solution of particle appearance can be suppressed |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
TWI766488B (en) * | 2020-12-19 | 2022-06-01 | 逢甲大學 | Organic polymer film and manufacturing method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03124048A (en) * | 1989-10-06 | 1991-05-27 | Fujitsu Ltd | Manufacture of semiconductor device |
US5576247A (en) * | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
US6479374B1 (en) * | 1998-04-01 | 2002-11-12 | Asahi Kasei Kabushiki Kaisha | Method of manufacturing interconnection structural body |
US6518205B1 (en) * | 1998-07-07 | 2003-02-11 | Alliedsignal Inc. | Multifunctional reagents for the surface modification of nanoporous silica films |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11135498A (en) * | 1997-10-29 | 1999-05-21 | Hitachi Ltd | Manufacturing method and device for semiconductor device |
JP3266195B2 (en) * | 1999-03-23 | 2002-03-18 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JP2001237200A (en) * | 2000-02-24 | 2001-08-31 | Hitachi Ltd | Method of manufacturing semiconductor integrated circuit |
JP2002353308A (en) * | 2001-05-28 | 2002-12-06 | Toshiba Corp | Semiconductor device and its manufacturing method |
CN1179613C (en) * | 2001-09-20 | 2004-12-08 | 联华电子股份有限公司 | Surface treatment method to improve adhesive force of organic low dielectric constant layer |
JP3648480B2 (en) * | 2001-12-26 | 2005-05-18 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
-
2004
- 2004-09-24 JP JP2006534058A patent/JP2007508691A/en active Pending
- 2004-09-24 WO PCT/US2004/031995 patent/WO2005034194A2/en active Application Filing
- 2004-09-24 CN CN200480023744.XA patent/CN1839468B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03124048A (en) * | 1989-10-06 | 1991-05-27 | Fujitsu Ltd | Manufacture of semiconductor device |
US5576247A (en) * | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
US6479374B1 (en) * | 1998-04-01 | 2002-11-12 | Asahi Kasei Kabushiki Kaisha | Method of manufacturing interconnection structural body |
US6518205B1 (en) * | 1998-07-07 | 2003-02-11 | Alliedsignal Inc. | Multifunctional reagents for the surface modification of nanoporous silica films |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 015, no. 330 (E - 1103) 22 August 1991 (1991-08-22) * |
Also Published As
Publication number | Publication date |
---|---|
JP2007508691A (en) | 2007-04-05 |
CN1839468B (en) | 2010-11-24 |
WO2005034194A2 (en) | 2005-04-14 |
CN1839468A (en) | 2006-09-27 |
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