WO2005034171A3 - Photovoltaikelement - Google Patents

Photovoltaikelement Download PDF

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Publication number
WO2005034171A3
WO2005034171A3 PCT/EP2004/010916 EP2004010916W WO2005034171A3 WO 2005034171 A3 WO2005034171 A3 WO 2005034171A3 EP 2004010916 W EP2004010916 W EP 2004010916W WO 2005034171 A3 WO2005034171 A3 WO 2005034171A3
Authority
WO
WIPO (PCT)
Prior art keywords
photon absorber
photovoltaic
photovoltaic element
working element
photon
Prior art date
Application number
PCT/EP2004/010916
Other languages
English (en)
French (fr)
Other versions
WO2005034171A2 (de
Inventor
Wolf Naegel
Original Assignee
Wolf Naegel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wolf Naegel filed Critical Wolf Naegel
Priority to EP04765705A priority Critical patent/EP1676293A2/de
Priority to JP2006530047A priority patent/JP2007507868A/ja
Priority to AU2004278833A priority patent/AU2004278833B2/en
Priority to US10/573,864 priority patent/US20070039645A1/en
Publication of WO2005034171A2 publication Critical patent/WO2005034171A2/de
Publication of WO2005034171A3 publication Critical patent/WO2005034171A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Ein Photovoltaikelement, das insbesondere als Solarzelle für Photovoltaikanlagen verwendet wird, weist einen Photonenabsorber (10) auf. In den Photonenabsorber (10) ist ein elektrisch leitfähiges Wirkelement (12) zumindest teilweise eingelassen. Das Wirkelement (12) ist über eine Phasengrenze von dem Photonenabsorber (10) getrennt. Ferner weist das Wirkelement (12) eine höhere Elektronenbeweglichkeit als der Photonenabsorber (10) auf. Überraschend wurde festgestellt, dass der Wirkungsgrad des erfindungsgemäßen Photovoltaikelements deutlich erhöht ist.
PCT/EP2004/010916 2003-10-01 2004-09-30 Photovoltaikelement WO2005034171A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP04765705A EP1676293A2 (de) 2003-10-01 2004-09-30 Photovoltaikelement
JP2006530047A JP2007507868A (ja) 2003-10-01 2004-09-30 光起電力素子
AU2004278833A AU2004278833B2 (en) 2003-10-01 2004-09-30 Photovoltaic element
US10/573,864 US20070039645A1 (en) 2003-10-01 2004-09-30 Photovoltaic element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10345736A DE10345736A1 (de) 2003-10-01 2003-10-01 Photovoltaikelement
DE10345736.4 2003-10-01

Publications (2)

Publication Number Publication Date
WO2005034171A2 WO2005034171A2 (de) 2005-04-14
WO2005034171A3 true WO2005034171A3 (de) 2005-12-08

Family

ID=34399164

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/010916 WO2005034171A2 (de) 2003-10-01 2004-09-30 Photovoltaikelement

Country Status (7)

Country Link
US (1) US20070039645A1 (de)
EP (1) EP1676293A2 (de)
JP (1) JP2007507868A (de)
CN (1) CN100517768C (de)
DE (1) DE10345736A1 (de)
WO (1) WO2005034171A2 (de)
ZA (1) ZA200602141B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101212198B1 (ko) * 2006-04-06 2012-12-13 삼성에스디아이 주식회사 태양 전지

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234351A (en) * 1978-07-14 1980-11-18 The Boeing Company Process for fabricating glass-encapsulated solar cell arrays and the product produced thereby
WO1988003709A1 (en) * 1986-11-04 1988-05-19 Spectrolab, Inc. Solar cell having improved front surface metallization
DE19837365A1 (de) * 1998-08-18 2000-03-02 Forschungszentrum Juelich Gmbh Solarzelle mit Clustern im aktiven Bereich
EP1130657A2 (de) * 1999-06-09 2001-09-05 Universidad Politecnica De Madrid Photovoltaische halbleiter-sonnenzelle mit einem zwischenband

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4018266Y1 (de) * 1962-08-31 1965-06-28
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
US4174978A (en) * 1978-05-11 1979-11-20 Chubrikov Boris A Semiconductor photovoltaic generator and method of fabricating thereof
US4341918A (en) * 1980-12-24 1982-07-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High voltage planar multijunction solar cell
AU570309B2 (en) * 1984-03-26 1988-03-10 Unisearch Limited Buried contact solar cell
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
JPS6276166A (ja) * 1985-09-27 1987-04-08 Hiroshi Tsubomura 半導体光エネルギ−変換装置
AU663350B2 (en) * 1991-12-09 1995-10-05 Csg Solar Ag Buried contact, interconnected thin film and bulk photovoltaic cells
US5828088A (en) * 1996-09-05 1998-10-27 Astropower, Inc. Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes
US6081017A (en) * 1998-05-28 2000-06-27 Samsung Electronics Co., Ltd. Self-biased solar cell and module adopting the same
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
JP2003158282A (ja) * 2001-08-30 2003-05-30 Canon Inc 太陽光発電システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234351A (en) * 1978-07-14 1980-11-18 The Boeing Company Process for fabricating glass-encapsulated solar cell arrays and the product produced thereby
WO1988003709A1 (en) * 1986-11-04 1988-05-19 Spectrolab, Inc. Solar cell having improved front surface metallization
DE19837365A1 (de) * 1998-08-18 2000-03-02 Forschungszentrum Juelich Gmbh Solarzelle mit Clustern im aktiven Bereich
EP1130657A2 (de) * 1999-06-09 2001-09-05 Universidad Politecnica De Madrid Photovoltaische halbleiter-sonnenzelle mit einem zwischenband

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHATTOPADHYAY P: "A NOVEL LOW RESISTIVE METAL-INSULATOR-SEMICONDUCTOR (MIS) INVERSIONLAYER SOLAR CELL STRUCTURE", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 31, no. 11, 1 November 1988 (1988-11-01), pages 1641 - 1643, XP000112641, ISSN: 0038-1101 *
YOSHIHIRO NAKATO ET AL: "IMPROVEMENT OF CHARACTERISTICS OF NEW-TYPE SOLAR CELLS, HAVING A TRANSPARENT CONDUCTOR/THIN SIO2 LAYER WITH ULTRAFINE METAL PARTICLES AS CONDUCTIVE CHANNELS/N-SI JUNCTION", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 37, no. 3/4, 1 July 1995 (1995-07-01), pages 323 - 335, XP000521873, ISSN: 0927-0248 *
YOSHIHIRO NAKATO ET AL: "SOLAR CELLS BASED ON A NEW JUNCTION TRANSPARENT CONDUCTOR/THIN INSULATOR HAVING ULTRAFINE METAL ISLANDS/SEMICONDUCTOR", PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SCIENCE AND ENGINEERING CONFERENCE. KYOTO, NOV. 26 - 30, 1990, KYOTO, KYOTO UNIVERSITY, JP, vol. CONF. 5, 26 November 1990 (1990-11-26), pages 939 - 942, XP000215152 *

Also Published As

Publication number Publication date
US20070039645A1 (en) 2007-02-22
EP1676293A2 (de) 2006-07-05
WO2005034171A2 (de) 2005-04-14
JP2007507868A (ja) 2007-03-29
DE10345736A1 (de) 2005-05-04
AU2004278833A1 (en) 2005-04-14
CN1864273A (zh) 2006-11-15
CN100517768C (zh) 2009-07-22
ZA200602141B (en) 2007-06-27

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