WO2005026678A1 - Mehrschichtiges piezoelektrisches messelement und ein druck- oder kraftsensor umfassend ein solches messelement - Google Patents
Mehrschichtiges piezoelektrisches messelement und ein druck- oder kraftsensor umfassend ein solches messelement Download PDFInfo
- Publication number
- WO2005026678A1 WO2005026678A1 PCT/CH2004/000571 CH2004000571W WO2005026678A1 WO 2005026678 A1 WO2005026678 A1 WO 2005026678A1 CH 2004000571 W CH2004000571 W CH 2004000571W WO 2005026678 A1 WO2005026678 A1 WO 2005026678A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- measuring element
- crystals
- electrodes
- force
- electrode
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims abstract description 69
- 230000010287 polarization Effects 0.000 claims abstract description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/008—Transmitting or indicating the displacement of flexible diaphragms using piezoelectric devices
Definitions
- the invention relates to a piezoelectric measuring element consisting of at least two piezoelectric crystals with a transverse effect for measuring axially acting forces and / or pressures and a pressure or force sensor comprising such a measuring element.
- Piezoelectric crystals are used in many places in sensors to measure forces, pressures, accelerations, strains and moments, or combinations thereof.
- crystals with a transverse effect are cut into thin plates or rods.
- such thin plates or strips are exposed, for example, to an axially acting force, that is to say a force on two opposite end faces of a plate or a strip. If this is a crystal with a transverse effect, an electrical charge accumulates on the two large side surfaces of the plates or strips under the action of force.
- These charges are collected on electrically conductive layers, so-called electrodes, which are attached to these two side surfaces and have no electrical contact with one another, and are passed on with the corresponding device in the sensor.
- a suitable device finally detects the signal generated by these charges from the sensor, whereby information about the force can be obtained.
- the polarization describes the direction from the respectively negative to the respectively positively charged electrode under the influence of force.
- each of the crystals is installed vertically and centered parallel to the axis of the sensor. A slight tilt position results in an incorrect measurement or in a breakage of the crystal under the influence of the forces that occur later.
- the sensitivity of such a sensor is proportional to the ratio of the rod length to the rod thickness of the crystal.
- the length of the rod is defined by the distance between the force-introducing end faces and the thickness by the distance between the side faces on which the charges accumulate under the influence of force.
- the thinner a crystal the higher its sensitivity with the same length.
- the maximum load-bearing capacity of thin panels is lower than that of thick panels because they break more easily.
- a known arrangement consists of three crystals that the
- Another known arrangement uses four thin crystal plates of the same length, spaced apart from one another.
- the assembly especially the centering of the crystals, is correspondingly more difficult in these arrangements of multiple crystals.
- the object of the present invention is to describe a piezoelectric measuring element mentioned at the beginning which can be easily centered and connected in a sensor. Another task is to comprehensively describe such a measuring element.
- the crystals with a transverse effect are fixed to each other with opposite polarization by means of a lateral electrode.
- Thin crystals are preferably used in order to increase the sensitivity of the measuring element.
- the electrodes preferably run alternately into the two force-absorbing end faces of the crystals.
- the electrodes are connected to one another in such a way that a corresponding force signal can be taken from the measuring element when an axial force is applied.
- Such measuring elements can be produced inexpensively from wafers.
- a compact, multi-layer measuring element created in this way can easily be installed and centered in a sensor, in particular in a force or pressure sensor, without the risk of a tilting position, since the measuring element has a base area n times wider than the end face of a single crystal.
- Such sensors are characterized by high resilience and high sensitivity and are also inexpensive thanks to the simple manufacture and assembly of the measuring elements incorporated therein.
- FIG. 1 Schematic perspective view of a less sensitive piezoelectric crystal according to the prior art
- FIG. 2 shows a schematic perspective illustration of a highly sensitive piezoelectric crystal with a low maximum load capacity according to the prior art
- FIG. 3 Schematic representation of a highly sensitive piezoelectric measuring element with high maximum load capacity according to the prior art in perspective side view (a) and in top view (b);
- FIG. 4 Schematic representation of another highly sensitive piezoelectric measuring element with high maximum load capacity according to the prior art in perspective side view (a) and in top view (b);
- FIG. 5 shows a schematic perspective illustration of a highly sensitive piezoelectric measuring element according to the invention (a) viewed from above and (b) viewed from below;
- FIG. 6 shows a schematic perspective illustration of a wafer for highly sensitive piezoelectric measuring elements according to the invention
- FIG. 7 shows a schematic perspective illustration of a part of a wafer for highly sensitive piezoelectric measuring elements according to the invention.
- the direction of the arrow indicates the direction of polarization 4 of a piezoelectric crystal, from minus to plus.
- the surfaces of the crystals that charge positively (+) or negatively (-) under the influence of force are coated with electrodes.
- the electrodes, which are positively charged under the influence of force, are hatched and shown with a continuous outline; the electrodes, which are negatively charged under the influence of force, are each dotted and shown with a dotted outline.
- Polarization directions and thus also positive and negative charges were chosen arbitrarily for representation and can be reversed or reversed in each figure. be replaced.
- the large end face 3 in this embodiment is advantageous for easy centering when inserted into a sensor housing. Since the sensitivity is proportional to the average thickness d of the crystal, it is not very high.
- the crystal 1 can be made thinner.
- Such a crystal 1, which is also known, is shown in FIG. 2 in the form of a thin plate.
- the higher sensitivity due to the small thickness d reduces the ease of centering when installing in a sensor.
- the maximum load capacity is restricted, since such a thin crystal 1 breaks easily.
- FIG. 3 (a) and (b) • shows a known measuring element 2 consisting of three crystals 1 of equal length. These have a cross-sectional area 5 of a circular segment and are arranged such that they can be placed in a round sensor housing, a triangular surface 6 remains free in the middle. Under the influence of force, the electrodes on the inwardly facing surfaces all collect the same charge, which in this embodiment is removed by an electrically conductive spiral spring 7, shown in FIG. 3b. The charge of the electrodes on the outside of the crystals is removed through the sleeve of the round sensor housing, against which the spiral spring 7 presses the crystals 1.
- Such a measuring element 2 is characterized by its high resilience and high sensitivity. The manufacture and assembly with the centering remains very complex.
- FIGS. 4 (a) and (b) The known embodiment of a measuring element 2 shown in FIGS. 4 (a) and (b) has the same advantages and disadvantages as the embodiment of FIG. 3.
- four crystals 1 in the form of plates with the same height are arranged next to one another at a distance each with opposite polarization direction 4.
- a spring 8 in the form of a corrugated sheet is used between two adjacent crystals 1 to remove the charge, as shown in FIG. 4b.
- Such a spring 8 always ensures good contact for the charge acceptance.
- FIGS. 5a and 5b represent an inventive embodiment of a measuring element 9, from two sides, which are each rotated vertically by 180 ° to one another.
- This schematically illustrated measuring element 9 consists of at least two piezoelectric crystals 1 with a transverse effect arranged directly next to one another.
- the crystals 1 in this embodiment are preferably not thicker than 0.5 mm and preferably in the form of plates. All side surfaces that can be electrically charged under the influence of force are coated with a side electrode 10.
- the other middle electrodes 12 each firmly connect two adjacent crystals 1 to one another. The connection through the electrode must be so tight that it does not come loose under the maximum load to which the measuring element 9 is to be exposed and in the entire temperature range permitted for the measuring element.
- a measuring element switched in this way is suitable for measuring axially acting forces or pressures.
- the advantage of such a measuring element 9 is on the one hand that it is characterized by a high load capacity and a high sensitivity.
- the installation in a sensor, especially the centering is very simple since the measuring element 9 consists of a single part with a large base area.
- the arrangements of Figures 3 and 4, however, consist of the individual crystals 1 and the connecting, resilient electrodes 7, 8, which must ensure contact. Since the crystals in the embodiment according to the invention also lie directly next to one another, 3 more crystals can be used on the same base area than in an arrangement according to FIG. 4.
- Another advantage of this arrangement compared to the embodiments in FIGS. 3 and 4 is that the charge is taken off flat and not at points or along a line. This prevents the electrical contact from being damaged by abrasion caused by vibrations.
- FIG. 6 An example of such a wafer 15 is shown in FIG. 6.
- This wafer 15 consists, for example, of four large-area piezoelectric crystal plates with a transverse effect 16. These are arranged with opposite polarization to one another and connected to one another by means of an electrically conductive layer 12, the electrodes.
- This layer preferably consists essentially of copper, gold, silver, platinum or palladium or an alloy thereof.
- FIG. 7 shows part of a wafer 15, an array 17, which is produced in one direction (p) after the wafer has been cut.
- Such an array 17 is coated on its four large surfaces with an electrically conductive layer. This creates the two lateral end electrodes 11 of the resulting measuring elements 9 and the end electrodes 13.
- notch-shaped phases 14 on the array i 17 become lateral at every second contact line
- Electrode 10 attached with an end electrode 13 each side electrode 10 still exactly to an end soapy electrode 13 has an electrical contact and on the other hand, thanks to the notch-shaped phase 14, is electrically insulated. This also applies in particular to the two final, lateral electrodes 11.
- the array 17 is cut into the finished measuring elements 9 along the remaining dashed lines (q).
- Such measuring elements can be easily installed in sensors, preferably in force or pressure sensors.
- sensors are characterized by a high resilience 1 and high sensitivity and are also cost-effective due to the ease of preparation and centering of the measuring elements incorporated therein.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/572,015 US7548012B2 (en) | 2003-09-17 | 2004-09-10 | Multi-layer piezoelectric measuring element, and pressure sensor or force sensor comprising such a measuring element |
EP04761911.9A EP1664705B1 (de) | 2003-09-17 | 2004-09-10 | Mehrschichtiges piezoelektrisches messelement und ein druck- oder kraftsensor umfassend ein solches messelement |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01585/03 | 2003-09-17 | ||
CH15852003 | 2003-09-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005026678A1 true WO2005026678A1 (de) | 2005-03-24 |
Family
ID=34280709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CH2004/000571 WO2005026678A1 (de) | 2003-09-17 | 2004-09-10 | Mehrschichtiges piezoelektrisches messelement und ein druck- oder kraftsensor umfassend ein solches messelement |
Country Status (3)
Country | Link |
---|---|
US (1) | US7548012B2 (de) |
EP (1) | EP1664705B1 (de) |
WO (1) | WO2005026678A1 (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007128149A1 (de) * | 2006-05-04 | 2007-11-15 | Kistler Holding Ag | Piezoelektrisches messelement mit transversaleffekt und sensor, umfassend ein solches messelement |
AT503558B1 (de) * | 2006-06-13 | 2007-11-15 | Piezocryst Advanced Sensorics | Vorrichtung zur messung von druck, kraft, beschleunigung oder davon abgeleiteten grössen |
AT503816B1 (de) * | 2006-06-06 | 2008-01-15 | Piezocryst Advanced Sensorics | Piezoelektrischer sensor |
DE102008015678A1 (de) * | 2008-03-25 | 2009-10-08 | Weinhold, Wolfgang | Messvorrichtung mit Messtisch |
CN107543637A (zh) * | 2016-06-28 | 2018-01-05 | 基斯特勒控股公司 | 压电换能器 |
AT519442A1 (de) * | 2016-12-13 | 2018-06-15 | Piezocryst Advanced Sensorics | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
AT519429A1 (de) * | 2016-12-13 | 2018-06-15 | Piezocryst Advanced Sensorics | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
Families Citing this family (10)
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US20080251153A1 (en) * | 2007-03-29 | 2008-10-16 | Bell D Stewart | Liquid dispensing system |
US8576143B1 (en) * | 2010-12-20 | 2013-11-05 | Google Inc. | Head mounted display with deformation sensors |
JP2013101020A (ja) | 2011-11-08 | 2013-05-23 | Seiko Epson Corp | センサー素子、力検出装置およびロボット |
CH706635A1 (de) * | 2012-06-20 | 2013-12-31 | Kistler Holding Ag | Messelement, Messkörper und Messanordnung zum Messen einer Kraft und Verwendung eines solchen Messkörpers. |
US9522827B2 (en) * | 2013-05-02 | 2016-12-20 | Energy Storage Materials Llc | Piezoelectric material, piezoelectric member, piezoelectric element, and pressure sensor |
US9705069B2 (en) * | 2013-10-31 | 2017-07-11 | Seiko Epson Corporation | Sensor device, force detecting device, robot, electronic component conveying apparatus, electronic component inspecting apparatus, and component machining apparatus |
WO2017188130A1 (ja) * | 2016-04-28 | 2017-11-02 | 日本バルカー工業株式会社 | 感圧検出方法、感圧センサー、感圧検出装置および感圧検出システム |
US12000740B2 (en) * | 2020-11-17 | 2024-06-04 | Board Of Trustees Of Michigan State University | Sensor apparatus |
US11719942B2 (en) | 2021-06-25 | 2023-08-08 | Meta Platforms Technologies, Llc | Offsetting image light aberration due to waveguide movement in display assemblies using information from piezoelectric movement sensors |
WO2022272156A1 (en) * | 2021-06-25 | 2022-12-29 | Meta Platforms Technologies, Llc | Offsetting image light aberration due to waveguide movement in display assemblies |
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AT382968B (de) * | 1983-12-28 | 1987-05-11 | Avl Verbrennungskraft Messtech | Piezoelektrisches messelement |
DE3838014A1 (de) * | 1987-11-19 | 1989-06-01 | Avl Verbrennungskraft Messtech | Piezoelektrisches messelement |
EP1283552A2 (de) * | 2001-08-02 | 2003-02-12 | Kistler Holding AG | Kristallelement für Piezosensoren |
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NL65892C (de) * | 1943-03-04 | |||
AT237930B (de) * | 1962-09-12 | 1965-01-11 | Hans Dipl Ing Dr Techn List | Piezoelektrische Einrichtung, insbesondere zur Kraftmessung, und Verfahren zu ihrer Herstellung |
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CH399021A (de) * | 1964-02-19 | 1966-03-31 | Kistler Instrumente Ag | Beschleunigungs-Messgerät |
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EP0616222B1 (de) * | 1993-03-19 | 1997-05-21 | Murata Manufacturing Co., Ltd. | Beschleunigungsmessaufnehmer |
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WO1999013518A1 (en) * | 1997-09-08 | 1999-03-18 | Ngk Insulators, Ltd. | Piezoelectric/electrostriction device |
US6777856B2 (en) * | 2001-08-02 | 2004-08-17 | Kistler Holding Ag | Crystal element for piezo sensors |
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2004
- 2004-09-10 EP EP04761911.9A patent/EP1664705B1/de not_active Revoked
- 2004-09-10 WO PCT/CH2004/000571 patent/WO2005026678A1/de active Application Filing
- 2004-09-10 US US10/572,015 patent/US7548012B2/en not_active Expired - Fee Related
Patent Citations (3)
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AT382968B (de) * | 1983-12-28 | 1987-05-11 | Avl Verbrennungskraft Messtech | Piezoelektrisches messelement |
DE3838014A1 (de) * | 1987-11-19 | 1989-06-01 | Avl Verbrennungskraft Messtech | Piezoelektrisches messelement |
EP1283552A2 (de) * | 2001-08-02 | 2003-02-12 | Kistler Holding AG | Kristallelement für Piezosensoren |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007128149A1 (de) * | 2006-05-04 | 2007-11-15 | Kistler Holding Ag | Piezoelektrisches messelement mit transversaleffekt und sensor, umfassend ein solches messelement |
AT503816B1 (de) * | 2006-06-06 | 2008-01-15 | Piezocryst Advanced Sensorics | Piezoelektrischer sensor |
GB2442077A (en) * | 2006-06-06 | 2008-03-26 | Piezocryst Advanced Sensorics | Piezoelectric Sensor |
US7603906B2 (en) | 2006-06-06 | 2009-10-20 | Piezocryst Advanced Sensorics Gmbh | Piezoelectric sensor |
AT503558B1 (de) * | 2006-06-13 | 2007-11-15 | Piezocryst Advanced Sensorics | Vorrichtung zur messung von druck, kraft, beschleunigung oder davon abgeleiteten grössen |
DE102008015678A1 (de) * | 2008-03-25 | 2009-10-08 | Weinhold, Wolfgang | Messvorrichtung mit Messtisch |
CN107543637A (zh) * | 2016-06-28 | 2018-01-05 | 基斯特勒控股公司 | 压电换能器 |
CN107543637B (zh) * | 2016-06-28 | 2021-01-29 | 基斯特勒控股公司 | 压电换能器 |
AT519429A1 (de) * | 2016-12-13 | 2018-06-15 | Piezocryst Advanced Sensorics | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
EP3336911A1 (de) * | 2016-12-13 | 2018-06-20 | Piezocryst Advanced Sensorics GmbH | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
EP3340324A1 (de) * | 2016-12-13 | 2018-06-27 | Piezocryst Advanced Sensorics GmbH | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
AT519429B1 (de) * | 2016-12-13 | 2018-09-15 | Piezocryst Advanced Sensorics | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
AT519442B1 (de) * | 2016-12-13 | 2018-09-15 | Piezocryst Advanced Sensorics | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
EP3340324B1 (de) | 2016-12-13 | 2019-06-19 | Piezocryst Advanced Sensorics GmbH | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
EP3336911B1 (de) | 2016-12-13 | 2019-07-10 | Piezocryst Advanced Sensorics GmbH | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
AT519442A1 (de) * | 2016-12-13 | 2018-06-15 | Piezocryst Advanced Sensorics | Messelementstapel zum messen von kräften oder drücken und verfahren zur herstellung eines derartigen messelementstapels |
Also Published As
Publication number | Publication date |
---|---|
US7548012B2 (en) | 2009-06-16 |
US20070199376A1 (en) | 2007-08-30 |
EP1664705A1 (de) | 2006-06-07 |
EP1664705B1 (de) | 2013-04-17 |
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