WO2005024912A2 - Methods of processing thick ild layers using spray coating or lamination for c4 wafer level thick metal integrated flow - Google Patents
Methods of processing thick ild layers using spray coating or lamination for c4 wafer level thick metal integrated flow Download PDFInfo
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- WO2005024912A2 WO2005024912A2 PCT/US2004/028949 US2004028949W WO2005024912A2 WO 2005024912 A2 WO2005024912 A2 WO 2005024912A2 US 2004028949 W US2004028949 W US 2004028949W WO 2005024912 A2 WO2005024912 A2 WO 2005024912A2
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- metal layer
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- forming
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- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200480025653XA CN1846307B (en) | 2003-09-09 | 2004-09-03 | Methods of processing thick ILD layers using spray coating or lamination |
DE112004001654T DE112004001654T5 (en) | 2003-09-09 | 2004-09-03 | Process of processing thick ILD layers by means of spray coating or lamination for a C4 integrated wafer scale wafer process |
US10/559,584 US20070089899A1 (en) | 2004-02-25 | 2004-09-03 | Mica tape having maximized mica content |
KR1020067004885A KR101209390B1 (en) | 2003-09-09 | 2006-03-09 | 4 methods of processing thick ild layers using spray coating or lamination for c4 wafer level thick metal integrated flow |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/659,044 US6977435B2 (en) | 2003-09-09 | 2003-09-09 | Thick metal layer integrated process flow to improve power delivery and mechanical buffering |
US10/659,044 | 2003-09-09 | ||
US10/745,059 | 2003-12-22 | ||
US10/745,059 US6943440B2 (en) | 2003-09-09 | 2003-12-22 | Methods of processing thick ILD layers using spray coating or lamination for C4 wafer level thick metal integrated flow |
Publications (2)
Publication Number | Publication Date |
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WO2005024912A2 true WO2005024912A2 (en) | 2005-03-17 |
WO2005024912A3 WO2005024912A3 (en) | 2005-05-12 |
Family
ID=34279088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/028949 WO2005024912A2 (en) | 2003-09-09 | 2004-09-03 | Methods of processing thick ild layers using spray coating or lamination for c4 wafer level thick metal integrated flow |
Country Status (3)
Country | Link |
---|---|
US (2) | US20060012039A1 (en) |
KR (1) | KR101209390B1 (en) |
WO (1) | WO2005024912A2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2006129832A1 (en) * | 2005-06-01 | 2006-12-07 | Casio Computer Co., Ltd. | Semiconductor device and mounting structure thereof |
EP1737038A2 (en) * | 2005-06-24 | 2006-12-27 | Megica Corporation | Circuitry component and method for forming the same |
WO2007135763A1 (en) * | 2006-05-19 | 2007-11-29 | Casio Computer Co., Ltd. | Semiconductor device having low dielectric insulating film and manufacturing method of the same |
EP1905081A2 (en) * | 2005-06-24 | 2008-04-02 | International Business Machines Corporation | Multi-level interconnections for an integrated circuit chip |
US7582556B2 (en) | 2005-06-24 | 2009-09-01 | Megica Corporation | Circuitry component and method for forming the same |
US8154133B2 (en) | 2008-03-31 | 2012-04-10 | Casio Computer Co., Ltd. | Semiconductor device having low dielectric constant film and manufacturing method thereof |
US8587124B2 (en) | 2007-09-21 | 2013-11-19 | Teramikros, Inc. | Semiconductor device having low dielectric insulating film and manufacturing method of the same |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005024912A2 (en) * | 2003-09-09 | 2005-03-17 | Intel Corporation | Methods of processing thick ild layers using spray coating or lamination for c4 wafer level thick metal integrated flow |
US6977435B2 (en) * | 2003-09-09 | 2005-12-20 | Intel Corporation | Thick metal layer integrated process flow to improve power delivery and mechanical buffering |
TWI281699B (en) * | 2005-07-26 | 2007-05-21 | Siliconware Precision Industries Co Ltd | Semiconductor device and fabrication method thereof |
US7684205B2 (en) * | 2006-02-22 | 2010-03-23 | General Dynamics Advanced Information Systems, Inc. | System and method of using a compliant lead interposer |
US20090079072A1 (en) * | 2007-09-21 | 2009-03-26 | Casio Computer Co., Ltd. | Semiconductor device having low dielectric insulating film and manufacturing method of the same |
US7964965B2 (en) * | 2008-03-31 | 2011-06-21 | Intel Corporation | Forming thick metal interconnect structures for integrated circuits |
US7833899B2 (en) * | 2008-06-20 | 2010-11-16 | Intel Corporation | Multi-layer thick metallization structure for a microelectronic device, intergrated circuit containing same, and method of manufacturing an integrated circuit containing same |
US8446006B2 (en) * | 2009-12-17 | 2013-05-21 | International Business Machines Corporation | Structures and methods to reduce maximum current density in a solder ball |
US9214385B2 (en) | 2009-12-17 | 2015-12-15 | Globalfoundries Inc. | Semiconductor device including passivation layer encapsulant |
US8492892B2 (en) | 2010-12-08 | 2013-07-23 | International Business Machines Corporation | Solder bump connections |
CN103988299B (en) | 2011-09-30 | 2016-10-26 | 英特尔公司 | For the method handling very thin device wafer |
KR101706470B1 (en) * | 2015-09-08 | 2017-02-14 | 앰코 테크놀로지 코리아 주식회사 | Semiconductor device with surface finish layer and manufacturing method thereof |
Citations (4)
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Also Published As
Publication number | Publication date |
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WO2005024912A3 (en) | 2005-05-12 |
KR101209390B1 (en) | 2012-12-06 |
US20070190776A1 (en) | 2007-08-16 |
US20060012039A1 (en) | 2006-01-19 |
KR20060115725A (en) | 2006-11-09 |
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