WO2005022120A3 - Procede pour produire des nanocristaux et nanocristaux ainsi obtenus - Google Patents

Procede pour produire des nanocristaux et nanocristaux ainsi obtenus Download PDF

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Publication number
WO2005022120A3
WO2005022120A3 PCT/US2004/007138 US2004007138W WO2005022120A3 WO 2005022120 A3 WO2005022120 A3 WO 2005022120A3 US 2004007138 W US2004007138 W US 2004007138W WO 2005022120 A3 WO2005022120 A3 WO 2005022120A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanocrystals
temperature
precursor
mixture
producing
Prior art date
Application number
PCT/US2004/007138
Other languages
English (en)
Other versions
WO2005022120A2 (fr
Inventor
Erik C Scher
Mihai Buretea
Original Assignee
Nanosys Inc
Erik C Scher
Mihai Buretea
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosys Inc, Erik C Scher, Mihai Buretea filed Critical Nanosys Inc
Priority to EP04775831A priority Critical patent/EP1601612A2/fr
Priority to CA002518352A priority patent/CA2518352A1/fr
Priority to AU2004269297A priority patent/AU2004269297A1/en
Priority to JP2006509242A priority patent/JP2006521278A/ja
Publication of WO2005022120A2 publication Critical patent/WO2005022120A2/fr
Publication of WO2005022120A3 publication Critical patent/WO2005022120A3/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Catalysts (AREA)

Abstract

L'invention concerne un procédé pour produire des nanocristaux. Le procédé comprend la mise en contact d'un précurseur métallique au moyen d'un mélange, comprenant un solvant de coordination et éventuellement un tensioactif et un catalyseur métallique, ce qui permet de former un premier mélange précurseur. Le procédé comprend également le chauffage du premier mélange précurseur à une première température et la mise en contact du mélange précurseur et d'un second mélange précurseur qui peut être un précurseur du groupe V ou du groupe VI, ce qui forme un mélange de réaction à une deuxième température. Le procédé comprend, de plus, le chauffage du mélange de réaction à une troisième température permettant de faire croître les nanocristaux, l'écart de température entre les deux premières températures ne devant pas dépasser 15 °C.
PCT/US2004/007138 2003-03-11 2004-03-10 Procede pour produire des nanocristaux et nanocristaux ainsi obtenus WO2005022120A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP04775831A EP1601612A2 (fr) 2003-03-11 2004-03-10 Procede pour produire des nanocristaux et nanocristaux ainsi obtenus
CA002518352A CA2518352A1 (fr) 2003-03-11 2004-03-10 Procede pour produire des nanocristaux et nanocristaux ainsi obtenus
AU2004269297A AU2004269297A1 (en) 2003-03-11 2004-03-10 Process for producing nanocrystals and nanocrystals produced thereby
JP2006509242A JP2006521278A (ja) 2003-03-11 2004-03-10 ナノクリスタルを生成するためのプロセスおよびそれによって生成されるナノクリスタル

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45319803P 2003-03-11 2003-03-11
US60/453,198 2003-03-11

Publications (2)

Publication Number Publication Date
WO2005022120A2 WO2005022120A2 (fr) 2005-03-10
WO2005022120A3 true WO2005022120A3 (fr) 2005-04-28

Family

ID=34272394

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/007138 WO2005022120A2 (fr) 2003-03-11 2004-03-10 Procede pour produire des nanocristaux et nanocristaux ainsi obtenus

Country Status (5)

Country Link
EP (1) EP1601612A2 (fr)
JP (1) JP2006521278A (fr)
AU (1) AU2004269297A1 (fr)
CA (1) CA2518352A1 (fr)
WO (1) WO2005022120A2 (fr)

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US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US8507390B2 (en) 2004-06-08 2013-08-13 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8558304B2 (en) 2004-06-08 2013-10-15 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
US8592037B2 (en) 2004-01-15 2013-11-26 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US8749130B2 (en) 2004-01-15 2014-06-10 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US8865489B2 (en) 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8905772B2 (en) 2008-03-05 2014-12-09 The Board Of Trustees Of The University Of Illinois Stretchable and foldable electronic devices
US8916064B2 (en) 2009-05-01 2014-12-23 Nanosys, Inc. Functionalized matrices for dispersion of nanostructures
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
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US9117940B2 (en) 2007-01-17 2015-08-25 The Board Of Trustees Of The University Of Illinois Optical systems fabricated by printing-based assembly
US9149836B2 (en) 2004-06-08 2015-10-06 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
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US9324733B2 (en) 2004-06-04 2016-04-26 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US9450043B2 (en) 2004-06-04 2016-09-20 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US9554484B2 (en) 2012-03-30 2017-01-24 The Board Of Trustees Of The University Of Illinois Appendage mountable electronic devices conformable to surfaces

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Cited By (27)

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US8592037B2 (en) 2004-01-15 2013-11-26 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US8749130B2 (en) 2004-01-15 2014-06-10 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US9105555B2 (en) 2004-06-04 2015-08-11 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9324733B2 (en) 2004-06-04 2016-04-26 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US9450043B2 (en) 2004-06-04 2016-09-20 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US9515025B2 (en) 2004-06-04 2016-12-06 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
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US8981452B2 (en) 2004-06-08 2015-03-17 Sandisk Corporation Methods and devices for forming nanostructure monolayers and devices including such monolayers
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JP2006521278A (ja) 2006-09-21
AU2004269297A1 (en) 2005-03-10
WO2005022120A2 (fr) 2005-03-10
CA2518352A1 (fr) 2005-03-10

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