WO2005020271A1 - Image display device - Google Patents

Image display device Download PDF

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Publication number
WO2005020271A1
WO2005020271A1 PCT/JP2004/011620 JP2004011620W WO2005020271A1 WO 2005020271 A1 WO2005020271 A1 WO 2005020271A1 JP 2004011620 W JP2004011620 W JP 2004011620W WO 2005020271 A1 WO2005020271 A1 WO 2005020271A1
Authority
WO
WIPO (PCT)
Prior art keywords
grid
substrate
spacer
spacers
image display
Prior art date
Application number
PCT/JP2004/011620
Other languages
French (fr)
Japanese (ja)
Inventor
Sachiko Hirahara
Masaru Nikaido
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Publication of WO2005020271A1 publication Critical patent/WO2005020271A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/028Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123Flat display tubes
    • H01J31/125Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/8625Spacing members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/8625Spacing members
    • H01J2329/863Spacing members characterised by the form or structure

Definitions

  • the present invention relates to an image display device including a substrate disposed to face and a spacer structure disposed between the substrates.
  • CTRs cathode ray tubes
  • FED field 'emission' device
  • SED surface conduction electron-emitting device
  • the SED includes a first substrate and a second substrate that are opposed to each other at a predetermined interval, and these substrates are joined to each other via rectangular side walls to form a vacuum envelope. Is composed. On the inner surface of the first substrate, phosphor layers of three colors are formed, and on the inner surface of the second substrate, a large number of electron-emitting devices corresponding to each pixel are arranged as an electron source for exciting the phosphor. I have. Each electron-emitting device includes an electron-emitting portion, a pair of electrodes for applying a voltage to the electron-emitting portion, and the like.
  • the space between the first substrate and the second substrate that is, the inside of the vacuum envelope is maintained at a high degree of vacuum.
  • the degree of vacuum is low, the life of the electron-emitting device and, consequently, the life of the device are reduced.
  • a number of plate-like or columnar spacers are arranged between the two substrates.
  • each through hole is filled with a paste-like spacer forming material.
  • the protrusion of the spacer forming material is removed by scraping the surface of the mold with a squeegee or the like.
  • two molds are removed from the metal plate to obtain a columnar spacer formed on the metal plate. And so on.
  • the spacer forming material enters between the metal plate and the mold.
  • the spacer-forming material and the adhesive component that have oozed out onto the metal plate have an irregular oozing shape and are likely to be a source of discharge.
  • the bleeding portion of the spacer forming material is charged, the electron beam emitted from the electron-emitting device is attracted to the bleeding portion and deviates from the original orbit. As a result, there is a problem in that mislanding of the electron beam occurs with respect to the phosphor layer, and the color purity of the displayed image is deteriorated.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide an image display device that suppresses bleeding of a spacer forming material and has improved withstand voltage characteristics and display quality. .
  • an image display device includes a first substrate on which a fluorescent screen is formed, and a first substrate on which the fluorescent screen is formed, which is opposed to the first substrate with a predetermined gap therebetween.
  • a second substrate provided with a plurality of electron emission sources for exciting the phosphor screen, and a space provided between the first and second substrates and supporting an atmospheric load acting on the first and second substrates.
  • a spacer structure wherein the spacer structure faces the first and second substrates, and has a plurality of electron beam passage holes respectively facing the electron emission source.
  • An image display device is configured such that a first substrate on which a phosphor screen is formed is opposed to the first substrate with a predetermined gap therebetween, and the phosphor screen is excited.
  • a second substrate provided with a plurality of electron emission sources, and a spacer structure provided between the first and second substrates for supporting an atmospheric load acting on the first and second substrates.
  • a plate-like grid facing the first and second substrates, and having a plurality of electron beam passage holes respectively facing the electron emission source.
  • a plurality of spacers erected on at least one surface of the grid, wherein the grid is formed on the at least one surface and is located around the grid-side end of each spacer. It has a plurality of grooves.
  • FIG. 1 is a perspective view showing an SED according to a first embodiment of the present invention.
  • FIG. 2 is a perspective view of the SED, taken along line II-II in FIG. 1.
  • FIG. 3 is an enlarged sectional view showing the SED.
  • FIG. 4 is an enlarged perspective view showing a part of the spacer structure.
  • FIG. 5 is a cross-sectional view along the line V—V in FIG.
  • FIG. 6 is a cross-sectional view showing a process of manufacturing the spacer structure.
  • FIG. 7 is a cross-sectional view showing an assembly in which a mold and a grid are brought into close contact.
  • FIG. 8 is a cross-sectional view showing a process of manufacturing the spacer structure.
  • FIG. 9 is a cross-sectional view showing a state where the mold is opened.
  • FIG. 10 is an enlarged perspective view showing a part of a spacer structure of an SED according to a second embodiment of the present invention.
  • FIG. 11 is a sectional view taken along lines XI-XI in FIG.
  • SED surface conduction electron-emitting device
  • the SED includes a first substrate 10 and a second substrate 12 each formed of a rectangular glass plate, and these substrates are separated by a gap of about 1.0 to 2.0 mm. Corresponding is located.
  • the first substrate 10 and the second substrate 12 are joined to each other via a rectangular frame-shaped side wall 14 made of glass to form a flat vacuum envelope 15 whose inside is maintained in a vacuum. .
  • a phosphor screen 16 functioning as a phosphor screen is formed on an inner surface of the first substrate 10.
  • This phosphor screen 16 is configured by arranging phosphor layers R, G, and B that emit red, blue, and green light, and a light shielding layer 11, and these phosphor layers are formed in a stripe shape, a dot shape, or a rectangular shape. Have been.
  • a metal back 17 made of aluminum or the like and a getter film 19 are sequentially formed.
  • a large number of surface conduction electron-emitting devices 18 each emitting an electron beam are provided on the inner surface of the second substrate 12.
  • These electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel.
  • Each electron-emitting device 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like.
  • a large number of wirings 21 for supplying a potential to the electron-emitting devices 18 are provided in a matrix shape, and the ends thereof are drawn out of the vacuum envelope 15 to extend.
  • the side wall 14 functioning as a joining member is sealed to the peripheral portion of the first substrate 10 and the peripheral portion of the second substrate 12 by a sealing material 20 such as a low melting point glass or a low melting point metal. Substrates are joined together.
  • a sealing material 20 such as a low melting point glass or a low melting point metal.
  • the SED includes a spacer structure 22 provided between the first substrate 10 and the second substrate 12.
  • the spacer structure 22 is composed of a grid 24 made of a rectangular metal plate and a large number of And a columnar spacer.
  • the grid 24 has a first surface 24a facing the inner surface of the first substrate 10 and a second surface 24b facing the inner surface of the second substrate 12, and is arranged in parallel with these substrates. ing .
  • a large number of electron beam passage holes 26 are formed in the grid 24 by etching or the like. The electron beam passage holes 26 are arranged to face the electron-emitting devices 18, respectively, and transmit the electron beams emitted from the electron-emitting devices.
  • a plurality of recesses 27 are respectively formed on the first and second surfaces 24a and 24b of the grid 24 by half etching or the like. These recesses 27 are formed in a region where the spacer is erected, that is, between two adjacent electron beam passage holes 26, and are arranged at a predetermined pitch.
  • the grid 24 is formed of, for example, an iron-nickel-based metal plate with a thickness of 0.1-0.3 mm. On the surface of the grid 24, an oxide film made of an element constituting the metal plate, for example, Fe
  • each electron beam passage hole 26 is covered with a high resistance film having a discharge current limiting effect.
  • the high-resistance film is formed in a high-resistance material consisting mainly of glass, til have 1 10 8 -1 10 15 resistance of 0 / b.
  • a first spacer 30 a is physically erected so as to overlap with each recess 27, and is located between the adjacent electron beam passage holes 26.
  • the tip of the first spacer 30a is in contact with the inner surface of the first substrate 10 via the getter film 19, the metal back 17, and the light shielding layer 11 of the phosphor screen 16.
  • a second spacer 30b is erected on each of the recesses 27, and is located between adjacent electron beam passage holes 26.
  • the tip of the second spacer 30b is in contact with the inner surface of the second substrate 12.
  • the tip of each second spacer 30 b is located on the wiring 21 provided on the inner surface of the second substrate 12.
  • the first and second spacers 30a and 30b are located in alignment with each other, and are formed integrally with the grid 24 with the double-sided force sandwiching the grid 24 therebetween.
  • each of the first and second spacers 30a and 30b is formed in a tapered shape having a smaller diameter from the grid 24 side toward the extending end.
  • each of the first spacers 30a has a substantially elliptical cross-sectional shape, and the base end located on the grid 24 side has a diameter of about 0.3 mm X 2 mm, and the extension end has a diameter of about 0.2 mm X 2mm, height about 0.6mm It is.
  • Each of the second spacers 30b has a substantially elliptical cross-sectional shape, and has a diameter of about 0.3 mm X 2 mm at a base end located on the grid 24 side and a diameter of about 0.2 mm X 2 mm at an extension end. , And the height is about 0.8 mm.
  • each recess 27 is formed in an elliptical shape corresponding to the base end of the first or second spacer 30a, 30b, and the base end of the spacer is formed. It is formed with a larger diameter and larger area.
  • a gap G is formed between the base edge of each of the first and second spacers 30a and 30b and the edge of the recess 27 so as to extend over the entire circumference of the spacer base end. .
  • the gap G is formed at 5 to 30% of the space D.
  • the gap G is formed to be, for example, 0.1 mm.
  • the depth d of each recess 27 is formed at 5 to 30% of the interval D.
  • the gap G may not necessarily be provided over the entire circumference of the base end of the first and second spacers, or the gap may not be uniform over the entire circumference.
  • the spacer structure 22 configured as described above is provided between the first substrate 10 and the second substrate 12.
  • the first and second spacers 30a and 30b contact the inner surfaces of the first substrate 10 and the second substrate 12 to support an atmospheric pressure load acting on these substrates and to set a predetermined distance between the substrates. To maintain.
  • the SED includes a voltage supply unit (not shown) for applying a voltage to the grid 24 and the metal back 17 of the first substrate 10.
  • the voltage supply unit is connected to the grid 24 and the metal back 17, respectively, and applies, for example, a voltage of 12 kV to the grid 24 and a voltage of 10 kV to the metal back 17.
  • an anode voltage is applied to the phosphor screen 16 and the metal back 17, and the electron beam emitted from the electron-emitting device 18 is accelerated by the anode voltage to collide with the phosphor screen 16.
  • the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed.
  • a grid 24 having a predetermined size and an upper die 36a and a lower die 36b having a rectangular plate shape having substantially the same dimensions as the grid are prepared.
  • a 0.15 mm thick metal plate made of Fe—50% Ni is degreased, washed, and dried, and then the electron beam passage hole 26 is formed by etching to form the grid 24.
  • a plurality of recesses 27 are formed by half-etching both surfaces of the grid 24.
  • an insulating film is formed on the grid surface including the inner surface of the electron beam passage hole 26. Further, a coating liquid containing glass as a main component is applied on the insulating film, dried, and fired to form a high-resistance film.
  • the upper mold 36a and the lower mold 36b as molding dies are formed in a flat plate shape using a transparent material that transmits ultraviolet light, for example, transparent silicon, transparent polyethylene terephthalate, or the like.
  • the upper die 36a has a flat contact surface 41a that is in contact with the grid 24, and a number of bottomed spacer forming holes 40a for forming the first spacer 30a.
  • the spacer forming holes 40a are respectively opened in the contact surface 41a of the upper die 36a, and are arranged at predetermined intervals.
  • the lower die 36b has a flat contact surface 41b and a number of bottomed spacer forming holes 40b for forming the second spacer 30b.
  • the spacer forming holes 40b are respectively opened in the contact surface 41b of the lower die 36b, and are arranged at predetermined intervals.
  • a spacer forming material 46 is filled in the spacer forming holes 40a of the upper mold 36a and the spacer forming holes 40b of the lower mold 26b.
  • a glass paste containing at least a UV-curable binder (organic component) and a glass filler is used as the spacer forming material 46. The specific gravity and viscosity of the glass paste are appropriately selected.
  • the upper die 36 a is positioned and abutted so that the spacer forming hole 40 a filled with the spacer forming material 46 is located between the electron beam passage holes 26.
  • the surface 41a is brought into close contact with the first surface 24a of the grid 24.
  • the lower die 36b is positioned so that each spacer forming hole 40b is located between the electron beam passage holes 26, and the contact surface 41b is brought into close contact with the second surface 24b of the grid 24.
  • an adhesive is applied in advance to the spacer standing position of the grid 24, that is, each recess 27 by a dispenser or printing.
  • an assembly 42 including the grid 24, the upper mold 36a, and the lower mold 36b is formed.
  • the spacer forming holes 40a of the upper die 36a and the spacer forming holes 40b of the lower die 36b are arranged to face each other with the dalid 24 therebetween.
  • the assembly 42 is placed in a flat vacuum vessel 50, and the upper die 36a and the lower die 36b are brought into close contact with the grid 24 using the atmospheric pressure.
  • the vacuum container 50 will be described in detail.
  • the vacuum vessel 50 has a first main wall 52 and a second main wall 54 each formed in a rectangular plate shape, and the first and second main walls are arranged to face each other with a gap.
  • a rectangular frame-shaped side wall 55 is provided between the peripheral portions of the first and second main walls 52 and 54.
  • the side wall 55 is air-tightly fixed to the inner peripheral edge of the first main wall 52 and stands substantially perpendicularly to the first main wall.
  • the free end, here the upper end, of the side wall 55 is in airtight contact with the inner peripheral edge of the second main wall 54 via the o-ring 56.
  • the inside of the vacuum vessel 50 thus configured is connected to a vacuum pump 58 via an exhaust valve 57 provided on a peripheral portion of the second main wall 54.
  • the first and second main walls 52, 54 are formed to have a larger planar dimension than the grid 24.
  • the first and second main walls 52 and 54 are formed of a material that can be elastically deformed and transmit ultraviolet light, for example, transparent silicon, transparent polyethylene terephthalate, glass, or the like. As will be described later, the inner surfaces of the first and second main walls 52 and 54 are provided with an uneven portion over substantially the entire surface so that the entire assembly 42 is uniformly pressed.
  • the pressure diffusion plate 60a is placed on the inner surface of the first main wall 52.
  • the assembly 42 is placed on the pressure diffusion plate 60a, and the lower die 36b is opposed to the first main wall 52, for example.
  • the pressure diffusion plate 60b is disposed on the assembly 42, and the second main wall 54 is further disposed on the assembly 42 so as to face the upper die 36a of the assembly 42 and the O-ring 56 Overlaid.
  • the pressure diffusion plates 60a and 60b are formed of an ultraviolet transmitting material.
  • the vacuum pump 58 as an exhaust means is operated to evacuate the vacuum container 50 to a predetermined degree of vacuum, and then the exhaust valve 57 is closed to maintain a vacuum in the vacuum container.
  • the inside of the vacuum vessel 50 is evacuated, atmospheric pressure acts on the first and second main walls 52 and 54 of the vacuum vessel. Therefore, the first and second main walls 52 and 54 press the assembled body 42 arranged inside from both sides, and bring the upper mold 36a and the lower mold 36b into close contact with the grid 24.
  • the first and second main walls 52 and 54 of the vacuum vessel 50 can be elastically deformed. Since it is formed of a suitable material, it is elastically deformed along the assembly 42 and comes into close contact with the upper mold 36a and the lower mold 36b. The inner surfaces of the first and second main walls 52, 54 are formed with irregularities. Therefore, the atmospheric pressure uniformly acts on the entire surface of the upper die 36a and the lower die 36b via the pressure diffusion plates 60a and 60b, respectively. Therefore, the grid 24, the upper mold 36a and the lower mold 36b are maintained in a very good contact state.
  • the first and second ultraviolet lamps 62a and 62b arranged outside the vacuum vessel 50 are used.
  • the main walls 52 and 54 are irradiated with ultraviolet light (UV).
  • the first and second main walls 52 and 54 of the vacuum vessel 50, the pressure diffusion plates 60a and 60b, the upper mold 36a and the lower mold 36b are each formed of an ultraviolet transmitting material. Therefore, the ultraviolet rays emitted from the ultraviolet lamps 62a and 62b pass through the first and second main walls 52 and 54 of the vacuum vessel 50, the pressure diffusion plates 60a and 60b, the upper mold 36a and the lower mold 36b, and are filled.
  • the spacer forming material 46 is irradiated.
  • the spacer forming material 46 can be cured by ultraviolet rays while maintaining the extremely good adhesion of the assembly 42.
  • the vacuum in the vacuum vessel 50 is released, and the assembly 42 is taken out of the vacuum vessel.
  • the vacuum container can be easily opened by releasing the vacuum.
  • the upper die 36a and the lower die 36b are separated from the grid 24 so that the hardened spacer forming material 46 is left on the grid 24.
  • the grid 24 on which the spacer forming material 46 is provided is heat-treated in a heating furnace, and after the spacer forming material internal force binder is blown off, the grid 24 is heated at about 500-550 ° C for 30 minutes and 1 hour. The spacer forming material is fully fired. As a result, a spacer structure 22 in which the first and second spacers 30a and 30b are formed on the grid 24 is obtained.
  • the second substrate 12 is prepared.
  • the spacer structure 22 obtained as described above is positioned and arranged on the second substrate 12.
  • the first substrate 10, the second substrate 12, and the spacer assembly 22 are placed in a vacuum chamber, and the inside of the vacuum chamber is evacuated. Join to the substrate.
  • an SED having the spacer structure 22 is manufactured.
  • the spacer on the grid surface is manufactured when the spacer structure is manufactured.
  • the bleeding of the forming material can be suppressed within the range of the recess.
  • the width of the spread of the spacer-forming material that has spread on the grid surface from the base end of each spacer is reduced by the range of the gap G between the edge of the spacer base end and the end of the recess 27. Therefore, it is possible to greatly reduce compared to the conventional method. Therefore, it is possible to prevent the occurrence of discharge due to bleeding of the spacer forming material, and to improve the withstand voltage characteristics of the SED.
  • each spacer standing position is replaced by the recess described above.
  • An annular groove 28 is provided on the first and second surfaces 24a and 24b of the grid 24, each spacer standing position is replaced by the recess described above.
  • An annular groove 28 is provided. That is, each groove 28 extends along the entire periphery of the grid-side edge of the first or second spacer 30a, 30b, and is formed so as to surround the periphery of the grid-side end.
  • Each groove 28 is formed by etching or the like, and its width W and depth d are each formed at 5 to 30% of the interval D between the adjacent electron beam passage holes 26.
  • the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention at the stage of implementation.
  • various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiment. Wear. For example, some components may be deleted from all the components shown in the embodiment. Further, components of different embodiments may be appropriately combined.
  • the spacer structure has a structure in which the first and second spacers and the dalid are integrally provided, but the second spacer is provided on the second substrate 12. It can be formed as a structure.
  • the spacer structure may include only the grid and the second spacer, and the grid may be in contact with the first substrate.
  • the diameter and height of the spacer, the dimensions and materials of the other components, and the like can be appropriately selected as required without being limited to the above-described embodiment.
  • Various filling conditions of the spacer forming material can be selected as needed.
  • the present invention is not limited to the one using a surface conduction electron-emitting device as an electron source, but is also applicable to an image display device using another electron source such as a field emission type or a carbon nanotube.
  • bleeding of the spacer forming material on the grid can be suppressed, generation of electric discharge due to bleeding of the spacer forming material, adverse effects on the electron beam can be suppressed, and resistance to electron beams can be reduced.
  • An image display device with improved voltage characteristics and display quality can be provided.

Abstract

Spacers are stood in recesses formed in at least one surface of a grid structuring a spacer structure body in order to constrain exudation of a spacer forming material of a image display device and improve withstand voltage characteristics and display quality. The spacer structure body has a plate-like grid and spacers. The plate-like grid faces a first substrate on which a fluorescent surface is provided and a second substrate on which electron discharge sources are provided and has electron beam passing holes each facing an electron discharge source. The spacers are stood on at least one surface of the grid. The grid has recesses formed in at least one surface of the grid, and the spacers are individually stood in the recesses.

Description

明 細 書  Specification
画像表示装置  Image display device
技術分野  Technical field
[0001] この発明は、対向配置された基板と、基板間に配設されたスぺーサ構体とを備えた 画像表示装置に関する。  [0001] The present invention relates to an image display device including a substrate disposed to face and a spacer structure disposed between the substrates.
背景技術  Background art
[0002] 近年、陰極線管(以下、 CRTと称する)に代わる次世代の軽量、薄型の表示装置と して様々な平面型の画像表示装置が注目されている。例えば、平面表示装置として 機能するフィールド 'ェミッション 'デバイス(以下、 FEDと称する)の一種として、表面 伝導型電子放出装置(以下、 SEDと称する)の開発が進められている。  [0002] In recent years, various flat-panel image display devices have been attracting attention as next-generation lightweight and thin display devices replacing cathode ray tubes (hereinafter, referred to as CRTs). For example, as a kind of field 'emission' device (hereinafter, referred to as FED) that functions as a flat panel display, the development of a surface conduction electron-emitting device (hereinafter, referred to as SED) is underway.
[0003] この SEDは、所定の間隔をおいて対向配置された第 1基板および第 2基板を備え 、これらの基板は矩形状の側壁を介して周辺部を互いに接合することにより真空外囲 器を構成している。第 1基板の内面には 3色の蛍光体層が形成され、第 2基板の内面 には、蛍光体を励起する電子源として、各画素に対応する多数の電子放出素子が配 歹 IJされている。各電子放出素子は、電子放出部、この電子放出部に電圧を印加する 一対の電極等で構成されてレ、る。  [0003] The SED includes a first substrate and a second substrate that are opposed to each other at a predetermined interval, and these substrates are joined to each other via rectangular side walls to form a vacuum envelope. Is composed. On the inner surface of the first substrate, phosphor layers of three colors are formed, and on the inner surface of the second substrate, a large number of electron-emitting devices corresponding to each pixel are arranged as an electron source for exciting the phosphor. I have. Each electron-emitting device includes an electron-emitting portion, a pair of electrodes for applying a voltage to the electron-emitting portion, and the like.
[0004] 上記 SEDにおいて、第 1基板および第 2基板間の空間、すなわち真空外囲器内は 、高い真空度に維持されることが重要となる。真空度が低い場合、電子放出素子の 寿命、ひいては、装置の寿命が低下してしまう。第 1基板および第 2基板間に作用す る大気圧荷重を支持し基板間の隙間を維持するため、両基板間には、多数の板状あ るいは柱状のスぺーサが配置されてレ、る。  In the SED, it is important that the space between the first substrate and the second substrate, that is, the inside of the vacuum envelope is maintained at a high degree of vacuum. When the degree of vacuum is low, the life of the electron-emitting device and, consequently, the life of the device are reduced. In order to support the atmospheric load acting between the first substrate and the second substrate and maintain the gap between the substrates, a number of plate-like or columnar spacers are arranged between the two substrates. RU
[0005] スぺーサを第 1基板および第 2基板の全面に渡って配置するためには、第 1基板の 蛍光体、第 2基板の電子放出素子に接触しないように、極めて薄い板状、あるいは極 めて細い柱状のスぺーサが必要となる。これらのスぺーサは、電子放出素子の極め て近くに設置せざるを得ないため、スぺーサとして絶縁体材料を使用する必要がある 。同時に、第 1基板および第 2基板の薄板化を検討した場合、一層多くのスぺーサが 必要となり、更に製造が困難となる。 [0006] 第 1基板の蛍光体間、および第 2基板の電子放出素子間に対するスぺーサの位置 合わせについては、蛍光体間あるいは電子放出素子間を狙って直接スぺーサを取り 付ける方法が提案されている。特開 2001— 272927号公報には、電子の通過する孔 が予め形成された金属板上に多数のスぺーサを高レ、位置精度で形成し、この金属 板上に形成されたスぺーサを第 1基板または第 2基板に位置合わせする方法が提案 されている。 [0005] In order to dispose the spacer over the entire surface of the first substrate and the second substrate, it is necessary to use an extremely thin plate so as not to contact the phosphor of the first substrate and the electron-emitting device of the second substrate. Or a very thin columnar spacer is required. Since these spacers must be installed very close to the electron-emitting device, an insulator material must be used as the spacer. At the same time, when considering thinning of the first and second substrates, more spacers are required, and the production becomes more difficult. [0006] Regarding the alignment of the spacers between the phosphors on the first substrate and between the electron-emitting devices on the second substrate, there is a method of directly attaching the spacers between the phosphors or between the electron-emitting devices. Proposed. Japanese Patent Application Laid-Open No. 2001-272927 discloses that a large number of spacers are formed with high accuracy and positional accuracy on a metal plate in which holes through which electrons pass are formed in advance, and the spacer formed on this metal plate is formed. There has been proposed a method of aligning the substrate with the first substrate or the second substrate.
[0007] 後者の場合、それぞれスぺーサ形状に対応する多数の孔が形成された 2枚の成形 型を金属板の表裏面に密着させ、金属板と 2枚の成形型によってスぺーサ形成用の 貫通孔を規定する。この状態で、各貫通孔にペースト状のスぺーサ形成材料を充填 する。スぺーサ形成材料のはみ出し分は、成形型の表面をスキージ等によって搔き 取ることにより除去する。続いて、充填されたスぺーサ形成材料を成形型内部で硬化 させた後、金属板から 2枚の成形型を取り外すことにより、金属板上に形成された柱 状のスぺーサを得る方法等が考えられる。  [0007] In the latter case, two molds each having a number of holes corresponding to the spacer shape are brought into close contact with the front and back surfaces of the metal plate, and the spacer is formed by the metal plate and the two molds. Specified through-holes. In this state, each through hole is filled with a paste-like spacer forming material. The protrusion of the spacer forming material is removed by scraping the surface of the mold with a squeegee or the like. Then, after the filled spacer forming material is cured inside the mold, two molds are removed from the metal plate to obtain a columnar spacer formed on the metal plate. And so on.
発明の開示  Disclosure of the invention
[0008] 上記の方法において、金属板と成形型とが厳格に密着していなければ、金属板と 成形型との間にスぺーサ形成材料が入り込んでしまう。この場合、正常な形状のスぺ ーサを形成できないばかりでなぐ金属板に予め形成されていた電子の通過孔がス ぺーサ形成材料によって塞がれてしまう恐れもある。金属板上に滲み出したスぺー サ形成材料および接着剤成分は、その滲み形状が不規則であり放電の発生源となり 易い。スぺーサ形成材料の滲み部分が帯電した場合、電子放出素子から放出され た電子ビームが滲み部分に引き付けられ、本来の軌道からずれてしまう。その結果、 蛍光体層に対して電子ビームのミスランディングが発生し、表示画像の色純度が劣 化するという問題がある。  [0008] In the above method, if the metal plate and the mold are not strictly adhered to each other, the spacer forming material enters between the metal plate and the mold. In this case, not only a spacer having a normal shape cannot be formed, but also an electron passage hole formed in the metal plate in advance may be blocked by the spacer forming material. The spacer-forming material and the adhesive component that have oozed out onto the metal plate have an irregular oozing shape and are likely to be a source of discharge. When the bleeding portion of the spacer forming material is charged, the electron beam emitted from the electron-emitting device is attracted to the bleeding portion and deviates from the original orbit. As a result, there is a problem in that mislanding of the electron beam occurs with respect to the phosphor layer, and the color purity of the displayed image is deteriorated.
[0009] この発明は、以上の点に鑑みなされたもので、その目的は、スぺーサ形成材料の 滲みを抑制し、耐電圧特性および表示品位の向上した画像表示装置を提供すること にある。  The present invention has been made in view of the above points, and an object of the present invention is to provide an image display device that suppresses bleeding of a spacer forming material and has improved withstand voltage characteristics and display quality. .
[0010] 上記目的を達成するため、この発明の態様に係る画像表示装置は、蛍光面が形成 された第 1基板と、上記第 1基板と所定の隙間を置いて対向配置されているとともに 上記蛍光面を励起する複数の電子放出源が設けられた第 2基板と、上記第 1および 第 2基板の間に設けられ上記第 1および第 2基板に作用する大気圧荷重を支持する スぺーサ構体と、を備え、上記スぺーサ構体は、上記第 1および第 2基板に対向して レ、るとともに、それぞれ上記電子放出源に対向した複数の電子ビーム通過孔を有し た板状のグリッドと、上記グリッドの少なくとも一方の表面上に立設された複数のスぺ ーサと、を有し、上記グリッドは上記少なくとも一方の表面に形成された複数の凹所を 有し、各スぺーサは上記凹所内に立設されている。 [0010] In order to achieve the above object, an image display device according to an aspect of the present invention includes a first substrate on which a fluorescent screen is formed, and a first substrate on which the fluorescent screen is formed, which is opposed to the first substrate with a predetermined gap therebetween. A second substrate provided with a plurality of electron emission sources for exciting the phosphor screen, and a space provided between the first and second substrates and supporting an atmospheric load acting on the first and second substrates. A spacer structure, wherein the spacer structure faces the first and second substrates, and has a plurality of electron beam passage holes respectively facing the electron emission source. And a plurality of spacers erected on at least one surface of the grid, wherein the grid has a plurality of recesses formed on the at least one surface. The spacer is erected in the recess.
[0011] この発明の他の態様に係る画像表示装置は、蛍光面が形成された第 1基板と、上 記第 1基板と所定の隙間を置いて対向配置されているとともに上記蛍光面を励起す る複数の電子放出源が設けられた第 2基板と、上記第 1および第 2基板の間に設けら れ上記第 1および第 2基板に作用する大気圧荷重を支持するスぺーサ構体と、を備 え、上記スぺーサ構体は、上記第 1および第 2基板に対向しているとともに、それぞ れ上記電子放出源に対向した複数の電子ビーム通過孔を有した板状のグリッドと、 上記グリッドの少なくとも一方の表面上に立設された複数のスぺーサと、を有し、上記 グリッドは上記少なくとも一方の表面に形成され各スぺーサの上記グリッド側端の周 囲に位置した複数の溝を有してレ、る。  [0011] An image display device according to another aspect of the present invention is configured such that a first substrate on which a phosphor screen is formed is opposed to the first substrate with a predetermined gap therebetween, and the phosphor screen is excited. A second substrate provided with a plurality of electron emission sources, and a spacer structure provided between the first and second substrates for supporting an atmospheric load acting on the first and second substrates. And a plate-like grid facing the first and second substrates, and having a plurality of electron beam passage holes respectively facing the electron emission source. A plurality of spacers erected on at least one surface of the grid, wherein the grid is formed on the at least one surface and is located around the grid-side end of each spacer. It has a plurality of grooves.
図面の簡単な説明  Brief Description of Drawings
[0012] [図 1]この発明の第 1の実施形態に係る SEDを示す斜視図。  FIG. 1 is a perspective view showing an SED according to a first embodiment of the present invention.
[図 2]図 1の線 II一 IIに沿って破断した上記 SEDの斜視図。  FIG. 2 is a perspective view of the SED, taken along line II-II in FIG. 1.
[図 3]上記 SEDを拡大して示す断面図。  FIG. 3 is an enlarged sectional view showing the SED.
[図 4]上記スぺーサ構体の一部を拡大して示す斜視図。  FIG. 4 is an enlarged perspective view showing a part of the spacer structure.
[図 5]図 4の線 V— Vに沿った断面図。  FIG. 5 is a cross-sectional view along the line V—V in FIG.
[図 6]上記スぺーサ構体の製造工程を示す断面図。  FIG. 6 is a cross-sectional view showing a process of manufacturing the spacer structure.
[図 7]成形型およびグリッドを密着させた組立体を示す断面図。  FIG. 7 is a cross-sectional view showing an assembly in which a mold and a grid are brought into close contact.
[図 8]上記スぺーサ構体の製造工程を示す断面図。  FIG. 8 is a cross-sectional view showing a process of manufacturing the spacer structure.
[図 9]上記成形型を開放した状態を示す断面図。  FIG. 9 is a cross-sectional view showing a state where the mold is opened.
[図 10]この発明の第 2の実施形態に係る SEDのスぺーサ構体の一部を拡大して示 す斜視図。 [図 11]図 10の線 XI-XIに沿った断面図。 FIG. 10 is an enlarged perspective view showing a part of a spacer structure of an SED according to a second embodiment of the present invention. FIG. 11 is a sectional view taken along lines XI-XI in FIG.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0013] 以下図面を参照しながら、この発明を、平面型の画像表示装置として FEDの一種 である表面伝導型電子放出装置 (以下、 SEDと称する)に適用した第 1の実施形態 について詳細に説明する。  [0013] A first embodiment in which the present invention is applied to a surface conduction electron-emitting device (hereinafter, referred to as SED), which is a type of FED, as a planar image display device will be described in detail with reference to the drawings. explain.
図 1ないし図 3に示すように、 SEDは、それぞれ矩形状のガラス板からなる第 1基板 10および第 2基板 12を備え、これらの基板は約 1. 0-2. 0mmの隙間をおいて対応 配置されている。第 1基板 10および第 2基板 12は、ガラスからなる矩形枠状の側壁 1 4を介して周縁部同士が接合され、内部が真空に維持された扁平な真空外囲器 15 を構成している。  As shown in FIGS. 1 to 3, the SED includes a first substrate 10 and a second substrate 12 each formed of a rectangular glass plate, and these substrates are separated by a gap of about 1.0 to 2.0 mm. Corresponding is located. The first substrate 10 and the second substrate 12 are joined to each other via a rectangular frame-shaped side wall 14 made of glass to form a flat vacuum envelope 15 whose inside is maintained in a vacuum. .
[0014] 第 1基板 10の内面には蛍光面として機能する蛍光体スクリーン 16が形成されてい る。この蛍光体スクリーン 16は、赤、青、緑に発光する蛍光体層 R、 G、 B、および遮 光層 11を並べて構成され、これらの蛍光体層はストライプ状あるいはドット状や矩形 状に形成されている。蛍光体スクリーン 16上には、アルミニウム等からなるメタルバッ ク 17およびゲッタ膜 19が順に形成されてレ、る。  A phosphor screen 16 functioning as a phosphor screen is formed on an inner surface of the first substrate 10. This phosphor screen 16 is configured by arranging phosphor layers R, G, and B that emit red, blue, and green light, and a light shielding layer 11, and these phosphor layers are formed in a stripe shape, a dot shape, or a rectangular shape. Have been. On the phosphor screen 16, a metal back 17 made of aluminum or the like and a getter film 19 are sequentially formed.
[0015] 第 2基板 12の内面には、蛍光体スクリーン 16の蛍光体層 R、 G、 Bを励起する電子 源として、それぞれ電子ビームを放出する多数の表面伝導型の電子放出素子 18が 設けられている。これらの電子放出素子 18は、画素毎に対応して複数列および複数 行に配列されている。各電子放出素子 18は、図示しない電子放出部、この電子放出 部に電圧を印加する一対の素子電極等で構成されている。第 2基板 12の内面上に は、電子放出素子 18に電位を供給する多数本の配線 21がマトリック状に設けられ、 その端部は真空外囲器 15の外部に引出されてレ、る。  [0015] On the inner surface of the second substrate 12, as an electron source for exciting the phosphor layers R, G, and B of the phosphor screen 16, a large number of surface conduction electron-emitting devices 18 each emitting an electron beam are provided. Have been. These electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. Each electron-emitting device 18 includes an electron-emitting portion (not shown), a pair of device electrodes for applying a voltage to the electron-emitting portion, and the like. On the inner surface of the second substrate 12, a large number of wirings 21 for supplying a potential to the electron-emitting devices 18 are provided in a matrix shape, and the ends thereof are drawn out of the vacuum envelope 15 to extend.
[0016] 接合部材として機能する側壁 14は、例えば、低融点ガラス、低融点金属等の封着 材 20により、第 1基板 10の周縁部および第 2基板 12の周縁部に封着され、これらの 基板同士を接合している。  [0016] The side wall 14 functioning as a joining member is sealed to the peripheral portion of the first substrate 10 and the peripheral portion of the second substrate 12 by a sealing material 20 such as a low melting point glass or a low melting point metal. Substrates are joined together.
[0017] 図 2ないし図 5に示すように、 SEDは、第 1基板 10および第 2基板 12の間に配設さ れたスぺーサ構体 22を備えている。本実施の形態において、スぺーサ構体 22は、 矩形状の金属板からなるグリッド 24と、グリッドの両面に一体的に立設された多数の 柱状のスぺーサと、で構成されている。 As shown in FIGS. 2 to 5, the SED includes a spacer structure 22 provided between the first substrate 10 and the second substrate 12. In the present embodiment, the spacer structure 22 is composed of a grid 24 made of a rectangular metal plate and a large number of And a columnar spacer.
[0018] 詳細に述べると、グリッド 24は第 1基板 10の内面と対向した第 1表面 24aおよび第 2 基板 12の内面と対向した第 2表面 24bを有し、これらの基板と平行に配置されている 。グリッド 24には、エッチング等により多数の電子ビーム通過孔 26が形成されている 。電子ビーム通過孔 26は、それぞれ電子放出素子 18と対向して配列され、電子放 出素子から放出された電子ビームを透過する。グリッド 24の第 1および第 2表面 24a 、 24bには、ハーフエッチング等によりそれぞれ複数の凹所 27が形成されている。こ れらの凹所 27は、スぺーサが立設される領域、すなわち、隣合う 2つの電子ビーム通 過孔 26の間に形成され、所定のピッチで配列されている。  More specifically, the grid 24 has a first surface 24a facing the inner surface of the first substrate 10 and a second surface 24b facing the inner surface of the second substrate 12, and is arranged in parallel with these substrates. ing . A large number of electron beam passage holes 26 are formed in the grid 24 by etching or the like. The electron beam passage holes 26 are arranged to face the electron-emitting devices 18, respectively, and transmit the electron beams emitted from the electron-emitting devices. A plurality of recesses 27 are respectively formed on the first and second surfaces 24a and 24b of the grid 24 by half etching or the like. These recesses 27 are formed in a region where the spacer is erected, that is, between two adjacent electron beam passage holes 26, and are arranged at a predetermined pitch.
[0019] グリッド 24は、例えば鉄—ニッケル系の金属板により厚さ 0. 1 -0. 3mmに形成され ている。グリッド 24の表面には、金属板を構成する元素からなる酸化膜、例えば、 Fe  The grid 24 is formed of, for example, an iron-nickel-based metal plate with a thickness of 0.1-0.3 mm. On the surface of the grid 24, an oxide film made of an element constituting the metal plate, for example, Fe
3 Three
O、 NiFe O力もなる酸化膜が形成されている。また、グリッド 24の表面 24a、 24b,O, NiFe O The oxide film which also becomes O power is formed. Also, the surfaces 24a, 24b,
4 2 4 4 2 4
並びに、各電子ビーム通過孔 26の壁面は、放電電流制限効果を有する高抵抗膜に より被覆されている。この高抵抗膜は、ガラスを主成分とする高抵抗物質で形成され 、 1 108—1 10150 /ロの抵抗値を有してぃる。 In addition, the wall surface of each electron beam passage hole 26 is covered with a high resistance film having a discharge current limiting effect. The high-resistance film is formed in a high-resistance material consisting mainly of glass, til have 1 10 8 -1 10 15 resistance of 0 / b.
[0020] グリッド 24の第 1表面 24a上には、各凹所 27に重ねて第 1スぺーサ 30aがー体的に 立設され、隣合う電子ビーム通過孔 26間に位置している。第 1スぺーサ 30aの先端 は、ゲッタ膜 19、メタルバック 17、および蛍光体スクリーン 16の遮光層 11を介して第 1基板 10の内面に当接している。グリッド 24の第 2表面 24b上には、各凹所 27に重 ねて第 2スぺーサ 30bがー体的に立設され、隣合う電子ビーム通過孔 26間に位置し ている。第 2スぺーサ 30bの先端は第 2基板 12の内面に当接している。ここで、各第 2スぺーサ 30bの先端は、第 2基板 12の内面上に設けられた配線 21上に位置してい る。各第 1および第 2スぺーサ 30a、 30bは互いに整列して位置し、グリッド 24を両面 力 挟み込んだ状態でグリッド 24と一体に形成されている。  On the first surface 24 a of the grid 24, a first spacer 30 a is physically erected so as to overlap with each recess 27, and is located between the adjacent electron beam passage holes 26. The tip of the first spacer 30a is in contact with the inner surface of the first substrate 10 via the getter film 19, the metal back 17, and the light shielding layer 11 of the phosphor screen 16. On the second surface 24b of the grid 24, a second spacer 30b is erected on each of the recesses 27, and is located between adjacent electron beam passage holes 26. The tip of the second spacer 30b is in contact with the inner surface of the second substrate 12. Here, the tip of each second spacer 30 b is located on the wiring 21 provided on the inner surface of the second substrate 12. The first and second spacers 30a and 30b are located in alignment with each other, and are formed integrally with the grid 24 with the double-sided force sandwiching the grid 24 therebetween.
[0021] 図 5に示すように、第 1および第 2スぺーサ 30a、 30bの各々は、グリッド 24側から延 出端に向かって径が小さくなつた先細テーパ状に形成されている。例えば、各第 1ス ぺーサ 30aはほぼ楕円状の横断面形状を有し、グリッド 24側に位置した基端の径が 約 0. 3mm X 2mm、延出端の径が約 0. 2mm X 2mm,高さが約 0. 6mmに形成さ れている。各第 2スぺーサ 30bはほぼ楕円状の横断面形状を有し、グリッド 24側に位 置した基端の径が約 0. 3mm X 2mm、延出端の径が約 0. 2mm X 2mm,高さが約 0. 8mmに形成されている。 As shown in FIG. 5, each of the first and second spacers 30a and 30b is formed in a tapered shape having a smaller diameter from the grid 24 side toward the extending end. For example, each of the first spacers 30a has a substantially elliptical cross-sectional shape, and the base end located on the grid 24 side has a diameter of about 0.3 mm X 2 mm, and the extension end has a diameter of about 0.2 mm X 2mm, height about 0.6mm It is. Each of the second spacers 30b has a substantially elliptical cross-sectional shape, and has a diameter of about 0.3 mm X 2 mm at a base end located on the grid 24 side and a diameter of about 0.2 mm X 2 mm at an extension end. , And the height is about 0.8 mm.
[0022] 図 4および図 5に示すように、各凹所 27は、第 1あるいは第 2スぺーサ 30a、 30bの 基端に対応した楕円形に形成されているとともに、スぺーサ基端よりも大きな径およ び大きな面積に形成されている。各第 1および第 2スぺーサ 30a、 30bの基端の端縁 と凹所 27の端縁との間には、スぺーサ基端の全周に渡って延びる隙間 Gが形成され ている。グリッド 24の隣合う電子ビーム通過孔 26間の間隔を Dとした場合、隙間 Gは 、間隔 Dの 5ないし 30%に形成されている。本実施の形態において、隙間 Gは例え ば 0. 1mmに形成されている。各凹所 27の深さ dは、上記間隔 Dの 5ないし 30%に 形成されている。この隙間 Gは、必ずしも第 1および第 2スぺーサの基端全周に渡つ て設けられていない場合でもよぐあるいは、隙間は全周に渡って均一でなくてもよい As shown in FIGS. 4 and 5, each recess 27 is formed in an elliptical shape corresponding to the base end of the first or second spacer 30a, 30b, and the base end of the spacer is formed. It is formed with a larger diameter and larger area. A gap G is formed between the base edge of each of the first and second spacers 30a and 30b and the edge of the recess 27 so as to extend over the entire circumference of the spacer base end. . When the space between adjacent electron beam passage holes 26 of the grid 24 is D, the gap G is formed at 5 to 30% of the space D. In the present embodiment, the gap G is formed to be, for example, 0.1 mm. The depth d of each recess 27 is formed at 5 to 30% of the interval D. The gap G may not necessarily be provided over the entire circumference of the base end of the first and second spacers, or the gap may not be uniform over the entire circumference.
[0023] 上記のように構成されたスぺーサ構体 22は第 1基板 10および第 2基板 12間に配 設されている。第 1および第 2スぺーサ 30a、 30bは、第 1基板 10および第 2基板 12 の内面に当接することにより、これらの基板に作用する大気圧荷重を支持し、基板間 の間隔を所定値に維持してレ、る。 The spacer structure 22 configured as described above is provided between the first substrate 10 and the second substrate 12. The first and second spacers 30a and 30b contact the inner surfaces of the first substrate 10 and the second substrate 12 to support an atmospheric pressure load acting on these substrates and to set a predetermined distance between the substrates. To maintain.
[0024] SEDは、グリッド 24および第 1基板 10のメタルバック 17に電圧を印加する図示しな い電圧供給部を備えている。この電圧供給部は、グリッド 24およびメタルバック 17に それぞれ接続され、例えば、グリッド 24に 12kV、メタルバック 17に 10kVの電圧を印 加する。 SEDにおいて画像を表示する場合、蛍光体スクリーン 16およびメタルバック 17にアノード電圧が印加され、電子放出素子 18から放出された電子ビームをァノー ド電圧により加速して蛍光体スクリーン 16へ衝突させる。これにより、蛍光体スクリー ン 16の蛍光体層が励起されて発光し、画像を表示する。  The SED includes a voltage supply unit (not shown) for applying a voltage to the grid 24 and the metal back 17 of the first substrate 10. The voltage supply unit is connected to the grid 24 and the metal back 17, respectively, and applies, for example, a voltage of 12 kV to the grid 24 and a voltage of 10 kV to the metal back 17. When an image is displayed on the SED, an anode voltage is applied to the phosphor screen 16 and the metal back 17, and the electron beam emitted from the electron-emitting device 18 is accelerated by the anode voltage to collide with the phosphor screen 16. As a result, the phosphor layer of the phosphor screen 16 is excited to emit light, and an image is displayed.
[0025] 次に、以上のように構成された SEDの製造方法について説明する。始めに、スぺ 一サ構体 22の製造方法にっレ、て説明する。  Next, a method of manufacturing the SED configured as described above will be described. First, a description will be given of a method of manufacturing the chassis 22.
図 6に示すように、スぺーサ構体 22を製造する場合、まず、所定寸法のグリッド 24、 このグリッドとほぼ同一の寸法を有した矩形板状の上型 36aおよび下型 36bを用意す る。この場合、 Fe— 50%Niからなる板厚 0. 15mmの金属板を脱脂、洗浄、乾燥した 後、エッチングにより電子ビーム通過孔 26を形成しグリッド 24とする。グリッド 24の両 表面をハーフエッチングすることにより、複数の凹所 27を形成する。その後、グリッド 2 4全体を酸化処理した後、電子ビーム通過孔 26の内面を含めグリッド表面に絶縁膜 を形成する。更に、絶縁膜の上に、ガラスを主成分としたコート液を塗布し、乾燥した 後、焼成することにより、高抵抗膜を形成する。 As shown in FIG. 6, when manufacturing the spacer structure 22, first, a grid 24 having a predetermined size and an upper die 36a and a lower die 36b having a rectangular plate shape having substantially the same dimensions as the grid are prepared. The In this case, a 0.15 mm thick metal plate made of Fe—50% Ni is degreased, washed, and dried, and then the electron beam passage hole 26 is formed by etching to form the grid 24. A plurality of recesses 27 are formed by half-etching both surfaces of the grid 24. Then, after oxidizing the entire grid 24, an insulating film is formed on the grid surface including the inner surface of the electron beam passage hole 26. Further, a coating liquid containing glass as a main component is applied on the insulating film, dried, and fired to form a high-resistance film.
[0026] 成形型としての上型 36aおよび下型 36bは、紫外線を透過する透明な材料、例え ば、透明シリコン、透明ポリエチレンテレフタレート等により平坦な板状に形成する。 上型 36aは、グリッド 24に当接される平坦な当接面 41aと、第 1スぺーサ 30aを成形 するための多数の有底のスぺーサ形成孔 40aと、を有している。スぺーサ形成孔 40a はそれぞれ上型 36aの当接面 41aに開口しているとともに、所定の間隔を置いて配 歹 IJされている。同様に、下型 36bは、平坦な当接面 41bと、第 2スぺーサ 30bを成形 するための多数の有底のスぺーサ形成孔 40bと、を有している。スぺーサ形成孔 40 bはそれぞれ下型 36bの当接面 41bに開口しているとともに、所定の間隔を置いて配 歹 IJされている。 The upper mold 36a and the lower mold 36b as molding dies are formed in a flat plate shape using a transparent material that transmits ultraviolet light, for example, transparent silicon, transparent polyethylene terephthalate, or the like. The upper die 36a has a flat contact surface 41a that is in contact with the grid 24, and a number of bottomed spacer forming holes 40a for forming the first spacer 30a. The spacer forming holes 40a are respectively opened in the contact surface 41a of the upper die 36a, and are arranged at predetermined intervals. Similarly, the lower die 36b has a flat contact surface 41b and a number of bottomed spacer forming holes 40b for forming the second spacer 30b. The spacer forming holes 40b are respectively opened in the contact surface 41b of the lower die 36b, and are arranged at predetermined intervals.
[0027] その後、上型 36aのスぺーサ形成孔 40aおよび下型 26bのスぺーサ形成孔 40bに スぺーサ形成材料 46を充填する。スぺーサ形成材料 46としては、少なくとも紫外線 硬化型のバインダ (有機成分)およびガラスフィラーを含有したガラスペーストを用い る。ガラスペーストの比重、粘度は適宜選択する。  Thereafter, a spacer forming material 46 is filled in the spacer forming holes 40a of the upper mold 36a and the spacer forming holes 40b of the lower mold 26b. As the spacer forming material 46, a glass paste containing at least a UV-curable binder (organic component) and a glass filler is used. The specific gravity and viscosity of the glass paste are appropriately selected.
[0028] 続いて、図 7に示すように、スぺーサ形成材料 46の充填されたスぺーサ形成孔 40a が電子ビーム通過孔 26間に位置するように、上型 36aを位置決めし当接面 41aをグ リツド 24の第 1表面 24aに密着させる。同様に、下型 36bを、各スぺーサ形成孔 40b が電子ビーム通過孔 26間に位置するように位置決めし、当接面 41bをグリッド 24の 第 2表面 24bに密着させる。なお、グリッド 24のスぺーサ立設位置、すなわち、各凹 所 27には、デイスペンサあるいは印刷により、予め接着剤を塗布しておく。これにより 、グリッド 24、上型 36aおよび下型 36bからなる組立体 42を構成する。組立体 42に おいて、上型 36aのスぺーサ形成孔 40aと下型 36bのスぺーサ形成孔 40bとは、ダリ ッド 24を挟んで対向して配列されている。 [0029] 次いで、図 8に示すように、組立体 42を偏平な真空容器 50内に配置し、大気圧を 利用して上型 36aおよび下型 36bをグリッド 24に密着させる。ここで真空容器 50につ レ、て詳細に説明する。 Subsequently, as shown in FIG. 7, the upper die 36 a is positioned and abutted so that the spacer forming hole 40 a filled with the spacer forming material 46 is located between the electron beam passage holes 26. The surface 41a is brought into close contact with the first surface 24a of the grid 24. Similarly, the lower die 36b is positioned so that each spacer forming hole 40b is located between the electron beam passage holes 26, and the contact surface 41b is brought into close contact with the second surface 24b of the grid 24. Note that an adhesive is applied in advance to the spacer standing position of the grid 24, that is, each recess 27 by a dispenser or printing. Thus, an assembly 42 including the grid 24, the upper mold 36a, and the lower mold 36b is formed. In the assembly 42, the spacer forming holes 40a of the upper die 36a and the spacer forming holes 40b of the lower die 36b are arranged to face each other with the dalid 24 therebetween. Next, as shown in FIG. 8, the assembly 42 is placed in a flat vacuum vessel 50, and the upper die 36a and the lower die 36b are brought into close contact with the grid 24 using the atmospheric pressure. Here, the vacuum container 50 will be described in detail.
真空容器 50は、それぞれ矩形板状に形成された第 1主壁 52および第 2主壁 54を 有し、これらの第 1および第 2主壁は隙間をおいて対向配置されている。第 1および 第 2主壁 52、 54の周縁部間には矩形枠状の側壁 55が設けられている。側壁 55は第 1主壁 52の内面周縁部に気密に固定され、第 1主壁に対してほぼ垂直に立設されて いる。側壁 55の自由端、ここでは、上端は、〇リング 56を介して第 2主壁 54の内面周 縁部に気密に当接している。このように構成された真空容器 50内部は、第 2主壁 54 の周縁部に設けられた排気バルブ 57を介して、真空ポンプ 58に接続されている。  The vacuum vessel 50 has a first main wall 52 and a second main wall 54 each formed in a rectangular plate shape, and the first and second main walls are arranged to face each other with a gap. A rectangular frame-shaped side wall 55 is provided between the peripheral portions of the first and second main walls 52 and 54. The side wall 55 is air-tightly fixed to the inner peripheral edge of the first main wall 52 and stands substantially perpendicularly to the first main wall. The free end, here the upper end, of the side wall 55 is in airtight contact with the inner peripheral edge of the second main wall 54 via the o-ring 56. The inside of the vacuum vessel 50 thus configured is connected to a vacuum pump 58 via an exhaust valve 57 provided on a peripheral portion of the second main wall 54.
[0030] 第 1および第 2主壁 52、 54は、グリッド 24よりも大きな平面寸法に形成されている。  [0030] The first and second main walls 52, 54 are formed to have a larger planar dimension than the grid 24.
第 1および第 2主壁 52、 54は、弾性変形可能であるとともに紫外線を透過可能な材 料、例えば、透明シリコン、透明ポリエチレンテレフタレート、ガラス等によって形成さ れている。後述するように、組立体 42全体が均一に加圧されるように、第 1および第 2 主壁 52、 54の内面には、ほぼ全面に渡って凹凸部が形成されている。  The first and second main walls 52 and 54 are formed of a material that can be elastically deformed and transmit ultraviolet light, for example, transparent silicon, transparent polyethylene terephthalate, glass, or the like. As will be described later, the inner surfaces of the first and second main walls 52 and 54 are provided with an uneven portion over substantially the entire surface so that the entire assembly 42 is uniformly pressed.
[0031] 上記のように構成された真空容器 50を用いて組立体 42を挟持する場合、まず、第 2主壁 54を取り外した状態で、第 1主壁 52の内面上に圧力拡散板 60aを敷設する。 この圧力拡散板 60a上に組立体 42を載置し、例えば、下型 36bを第 1主壁 52と対向 させる。  When the assembly 42 is sandwiched by using the vacuum vessel 50 configured as described above, first, with the second main wall 54 removed, the pressure diffusion plate 60a is placed on the inner surface of the first main wall 52. Lay. The assembly 42 is placed on the pressure diffusion plate 60a, and the lower die 36b is opposed to the first main wall 52, for example.
[0032] 次に、組立体 42の上に圧力拡散板 60bを配置し、更に、第 2主壁 54を重ねて配置 し、組立体 42の上型 36aと対向させるとともに周縁部を Oリング 56に重ね合わせる。 なお、圧力拡散板 60a、 60bは紫外線透過材料により形成されている。  Next, the pressure diffusion plate 60b is disposed on the assembly 42, and the second main wall 54 is further disposed on the assembly 42 so as to face the upper die 36a of the assembly 42 and the O-ring 56 Overlaid. The pressure diffusion plates 60a and 60b are formed of an ultraviolet transmitting material.
[0033] この状態で、排気手段としての真空ポンプ 58を作動させ、真空容器 50内を所定の 真空度となるまで排気した後、排気バルブ 57を閉じて真空容器内を真空に維持する 。真空容器 50内が真空になると、真空容器の第 1および第 2主壁 52、 54に対して大 気圧が作用する。そのため、第 1および第 2主壁 52、 54は、内部には配置された組 立体 42を両面側から押圧し、上型 36aおよび下型 36bをグリッド 24に密着させる。  In this state, the vacuum pump 58 as an exhaust means is operated to evacuate the vacuum container 50 to a predetermined degree of vacuum, and then the exhaust valve 57 is closed to maintain a vacuum in the vacuum container. When the inside of the vacuum vessel 50 is evacuated, atmospheric pressure acts on the first and second main walls 52 and 54 of the vacuum vessel. Therefore, the first and second main walls 52 and 54 press the assembled body 42 arranged inside from both sides, and bring the upper mold 36a and the lower mold 36b into close contact with the grid 24.
[0034] この際、前述した通り、真空容器 50の第 1および第 2主壁 52、 54は弾性変形可能 な材料で形成されているため、組立体 42に沿って弾性変形し上型 36aおよび下型 3 6bに密着する。第 1および第 2主壁 52、 54の内面は凹凸に形成されている。そのた め、大気圧はそれぞれ圧力拡散板 60a、 60bを介して上型 36aおよび下型 36bの全 面に均一に作用する。従って、グリッド 24、上型 36aおよび下型 36bは、極めて良好 な密着状態に維持される。 At this time, as described above, the first and second main walls 52 and 54 of the vacuum vessel 50 can be elastically deformed. Since it is formed of a suitable material, it is elastically deformed along the assembly 42 and comes into close contact with the upper mold 36a and the lower mold 36b. The inner surfaces of the first and second main walls 52, 54 are formed with irregularities. Therefore, the atmospheric pressure uniformly acts on the entire surface of the upper die 36a and the lower die 36b via the pressure diffusion plates 60a and 60b, respectively. Therefore, the grid 24, the upper mold 36a and the lower mold 36b are maintained in a very good contact state.
[0035] 上記のように大気圧を利用してグリッド 24、上型 36aおよび下型 36bを密着させた 状態で、真空容器 50の外側に配置された紫外線ランプ 62a、 62bから第 1および第 2 主壁 52、 54に向けて紫外線 (UV)を照射する。ここで、真空容器 50の第 1および第 2主壁 52、 54、圧力拡散板 60a、 60b、上型 36aおよび下型 36bはそれぞれ紫外線 透過材料で形成されている。そのため、紫外線ランプ 62a、 62bから照射された紫外 線は、真空容器 50の第 1および第 2主壁 52、 54、圧力拡散板 60a、 60b、上型 36a および下型 36bを透過し、充填されたスぺーサ形成材料 46に照射される。これにより 、組立体 42の極めて良好な密着を維持した状態で、スぺーサ形成材料 46を紫外線 硬化させることができる。  [0035] With the grid 24, the upper mold 36a and the lower mold 36b being in close contact with each other using the atmospheric pressure as described above, the first and second ultraviolet lamps 62a and 62b arranged outside the vacuum vessel 50 are used. The main walls 52 and 54 are irradiated with ultraviolet light (UV). Here, the first and second main walls 52 and 54 of the vacuum vessel 50, the pressure diffusion plates 60a and 60b, the upper mold 36a and the lower mold 36b are each formed of an ultraviolet transmitting material. Therefore, the ultraviolet rays emitted from the ultraviolet lamps 62a and 62b pass through the first and second main walls 52 and 54 of the vacuum vessel 50, the pressure diffusion plates 60a and 60b, the upper mold 36a and the lower mold 36b, and are filled. The spacer forming material 46 is irradiated. Thus, the spacer forming material 46 can be cured by ultraviolet rays while maintaining the extremely good adhesion of the assembly 42.
[0036] 続いて、真空容器 50の真空を解除し、組立体 42を真空容器から取り出す。この際 、第 2主壁 54は〇リングに接触しているのみであることから、真空を解除することにより 真空容器を容易に開放することができる。その後、図 9に示すように、硬化したスぺー サ形成材料 46をグリッド 24上に残すように、上型 36aおよび下型 36bをグリッド 24力 ら剥離する。次に、スぺーサ形成材料 46が設けられたグリッド 24を加熱炉内で熱処 理し、スぺーサ形成材料内力 バインダを飛ばした後、約 500— 550°Cで 30分一 1 時間、スぺーサ形成材料を本焼成する。これにより、グリッド 24上に第 1および第 2ス ぺーサ 30a、 30bが作り込まれたスぺーサ構体 22が得られる。  Subsequently, the vacuum in the vacuum vessel 50 is released, and the assembly 42 is taken out of the vacuum vessel. At this time, since the second main wall 54 is only in contact with the o-ring, the vacuum container can be easily opened by releasing the vacuum. Thereafter, as shown in FIG. 9, the upper die 36a and the lower die 36b are separated from the grid 24 so that the hardened spacer forming material 46 is left on the grid 24. Next, the grid 24 on which the spacer forming material 46 is provided is heat-treated in a heating furnace, and after the spacer forming material internal force binder is blown off, the grid 24 is heated at about 500-550 ° C for 30 minutes and 1 hour. The spacer forming material is fully fired. As a result, a spacer structure 22 in which the first and second spacers 30a and 30b are formed on the grid 24 is obtained.
[0037] 一方、 SEDの製造においては、予め、蛍光体スクリーン 16およびメタルバック 17の 設けられた第 1基板 10と、電子放出素子 18および配線 21が設けられているとともに 側壁 14が接合された第 2基板 12と、を用意しておく。  On the other hand, in the manufacture of the SED, the first substrate 10 on which the phosphor screen 16 and the metal back 17 are provided, the electron-emitting device 18 and the wiring 21 are provided, and the side wall 14 is joined in advance. The second substrate 12 is prepared.
[0038] 続いて、上記のようにして得られたスぺーサ構体 22を第 2基板 12上に位置決め配 置する。この状態で、第 1基板 10、第 2基板 12、およびスぺーサ構体 22を真空チヤ ンバ内に配置し、真空チャンバ内を真空排気した後、側壁 14を介して第 1基板を第 2 基板に接合する。これにより、スぺーサ構体 22を備えた SEDが製造される。 Subsequently, the spacer structure 22 obtained as described above is positioned and arranged on the second substrate 12. In this state, the first substrate 10, the second substrate 12, and the spacer assembly 22 are placed in a vacuum chamber, and the inside of the vacuum chamber is evacuated. Join to the substrate. As a result, an SED having the spacer structure 22 is manufactured.
[0039] 以上のように構成された SEDによれば、グリッド 24表面のスぺーサ立設位置に凹 所 27を設けることにより、スぺーサ構体を製造する際、グリッド表面上におけるスぺー サ形成材料の滲みを凹所の範囲内に抑制することができる。これにより、各スぺーサ の基端からグリッド表面上に滲みでたスぺーサ形成材料の滲みの幅を、スぺーサ基 端の端縁と凹所 27の端縁との隙間 Gの範囲とし、従来に比較して大幅に低減するこ とが可能となる。従って、スぺーサ形成材料の滲みに起因する放電の発生を防止し、 SEDの耐電圧特性を向上することができる。同時に、滲み部分の帯電に起因する電 子ビームの軌道ずれを防止し、電子ビームのランディング特性の向上および輝度向 上を図することができる。更に、電子ビーム通過孔 26がスぺーサ形成材料によって 塞がれてしまう恐れもなレ、。その結果、表示品位の向上した SEDを得ることができる。 [0039] According to the SED configured as described above, by providing the recess 27 at the spacer standing position on the surface of the grid 24, the spacer on the grid surface is manufactured when the spacer structure is manufactured. The bleeding of the forming material can be suppressed within the range of the recess. As a result, the width of the spread of the spacer-forming material that has spread on the grid surface from the base end of each spacer is reduced by the range of the gap G between the edge of the spacer base end and the end of the recess 27. Therefore, it is possible to greatly reduce compared to the conventional method. Therefore, it is possible to prevent the occurrence of discharge due to bleeding of the spacer forming material, and to improve the withstand voltage characteristics of the SED. At the same time, it is possible to prevent the orbital deviation of the electron beam due to the charging of the bleeding portion, thereby improving the landing characteristics of the electron beam and improving the luminance. Further, there is no danger that the electron beam passage hole 26 will be blocked by the spacer forming material. As a result, an SED with improved display quality can be obtained.
[0040] 次に、この発明の第 2の実施形態に係る SEDについて説明する。本実施形態によ れば、図 10および図 11に示すように、グリッド 24の第 1および第 2表面 24a、 24bに おいて、各スぺーサ立設位置には、前述した凹所に代えて環状の溝 28が設けられ ている。すなわち、各溝 28は、第 1あるいは第 2スぺーサ 30a、 30bのグリッド側端縁 の全周に沿って延び、このグリッド側端の周囲を囲んで形成されている。各溝 28はェ ツチング等により形成され、その幅 Wおよび深さ dは、いずれも隣合う電子ビーム通過 孔 26間の間隔 Dの 5ないし 30%に形成されている。 Next, an SED according to a second embodiment of the present invention will be described. According to the present embodiment, as shown in FIGS. 10 and 11, on the first and second surfaces 24a and 24b of the grid 24, each spacer standing position is replaced by the recess described above. An annular groove 28 is provided. That is, each groove 28 extends along the entire periphery of the grid-side edge of the first or second spacer 30a, 30b, and is formed so as to surround the periphery of the grid-side end. Each groove 28 is formed by etching or the like, and its width W and depth d are each formed at 5 to 30% of the interval D between the adjacent electron beam passage holes 26.
第 2の実施形態において、他の構成は前述した第 1の実施形態と同一であり、同一 の部分には同一の参照符号を付してその詳細な説明は省略する。  In the second embodiment, other configurations are the same as those of the above-described first embodiment, and the same portions are denoted by the same reference characters and detailed description thereof will not be repeated.
[0041] このように構成された第 2の実施形態においても、グリッド 24表面のスぺーサ立設 位置を囲んだ溝 28を設けることにより、スぺーサ構体を製造する際、グリッド表面上 におけるスぺーサ形成材料の滲みを溝によって抑制することができる。従って、第 2 の実施形態においても、前述した第 1の実施形態と同様の作用効果を得ることができ る。 [0041] Also in the second embodiment configured as described above, by providing the groove 28 surrounding the spacer standing position on the surface of the grid 24, when manufacturing a spacer structure, The bleeding of the spacer forming material can be suppressed by the groove. Therefore, also in the second embodiment, the same operation and effect as in the first embodiment can be obtained.
[0042] なお、本発明は上記実施形態そのままに限定されるものではなぐ実施段階ではそ の要旨を逸脱しない範囲で構成要素を変形して具体化できる。また、上記実施形態 に開示されている複数の構成要素の適宜な組み合わせにより、種々の発明を形成で きる。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除しても よい。さらに、異なる実施形態にわたる構成要素を適宜組み合わせてもよい。 [0042] The present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention at the stage of implementation. In addition, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiment. Wear. For example, some components may be deleted from all the components shown in the embodiment. Further, components of different embodiments may be appropriately combined.
[0043] 上述した実施形態において、スぺーサ構体は、第 1および第 2スぺーサおよびダリ ッドを一体的に備えた構成としたが、第 2スぺーサは第 2基板 12上に形成する構成と してもよレ、。スぺーサ構体は、グリッドおよび第 2スぺーサのみを備え、グリッドが第 1 基板に接触した構成としてもよレ、。  In the above-described embodiment, the spacer structure has a structure in which the first and second spacers and the dalid are integrally provided, but the second spacer is provided on the second substrate 12. It can be formed as a structure. The spacer structure may include only the grid and the second spacer, and the grid may be in contact with the first substrate.
[0044] その他、スぺーサの径や高さ、その他の構成要素の寸法、材質等は上述した実施 形態に限定されることなぐ必要に応じて適宜選択可能である。スぺーサ形成材料の 充填条件は必要に応じて種々選択可能である。この発明は、電子源として表面伝導 型電子放出素子を用いたものに限らず、電界放出型、カーボンナノチューブ等の他 の電子源を用いた画像表示装置にも適用可能である。  In addition, the diameter and height of the spacer, the dimensions and materials of the other components, and the like can be appropriately selected as required without being limited to the above-described embodiment. Various filling conditions of the spacer forming material can be selected as needed. The present invention is not limited to the one using a surface conduction electron-emitting device as an electron source, but is also applicable to an image display device using another electron source such as a field emission type or a carbon nanotube.
産業上の利用可能性  Industrial applicability
[0045] この発明によれば、グリッド上におけるスぺーサ形成材料の滲みを抑制することが でき、スぺーサ形成材料の滲みに起因する放電の発生、電子ビームに与える悪影響 を抑制し、耐電圧特性および表示品位の向上した画像表示装置を提供することがで きる。  According to the present invention, bleeding of the spacer forming material on the grid can be suppressed, generation of electric discharge due to bleeding of the spacer forming material, adverse effects on the electron beam can be suppressed, and resistance to electron beams can be reduced. An image display device with improved voltage characteristics and display quality can be provided.

Claims

請求の範囲 The scope of the claims
[1] 蛍光面が形成された第 1基板と、 [1] a first substrate on which a phosphor screen is formed,
上記第 1基板と所定の隙間を置いて対向配置されているとともに上記蛍光面を励 起する複数の電子放出源が設けられた第 2基板と、  A second substrate provided with a plurality of electron emission sources that are opposed to the first substrate with a predetermined gap and that excites the phosphor screen;
上記第 1および第 2基板の間に設けられ上記第 1および第 2基板に作用する大気 圧荷重を支持するスぺーサ構体と、を備え、  A spacer structure provided between the first and second substrates and supporting an atmospheric pressure load acting on the first and second substrates,
上記スぺーサ構体は、上記第 1および第 2基板に対向しているとともに、それぞれ 上記電子放出源に対向した複数の電子ビーム通過孔を有した板状のグリッドと、上 記グリッドの少なくとも一方の表面上に立設された複数のスぺーサと、を有し、上記グ リツドは上記少なくとも一方の表面に形成された複数の凹所を有し、各スぺーサは上 記凹所内に立設されている画像表示装置。  The spacer structure faces the first and second substrates, and has a plate-like grid having a plurality of electron beam passage holes facing the electron emission sources, and at least one of the grids. A plurality of spacers erected on the surface of the surface, wherein the grid has a plurality of recesses formed on at least one of the surfaces, and each spacer is provided in the recess. An image display device standing upright.
[2] 上記各凹所は、上記各スぺーサのグリッド側の端よりも大きな面積を有し、各スぺー サのグリッド側端の端縁と上記凹所の端縁との間に隙間が形成されている請求項 1に 記載の画像表示装置。 [2] Each of the recesses has a larger area than a grid-side end of each of the spacers, and a gap is provided between an edge of a grid-side end of each of the spacers and an edge of the recess. The image display device according to claim 1, wherein the image display device is formed.
[3] 上記各スぺーサのグリッド側端の端縁と上記凹所の端縁との間の隙間は、各スぺ ーサのグリッド側端の全周に渡って延びている請求項 2に記載の画像表示装置。  [3] The gap between the edge of the grid-side end of each spacer and the edge of the recess extends over the entire circumference of the grid-side end of each spacer. 3. The image display device according to 1.
[4] 上記各スぺーサおよび各凹所は、上記グリッドの隣合う電子ビーム通過孔間に設け られ、上記各スぺーサのグリッド側端の端縁と上記凹所の端縁との間の隙間は、上記 隣合う電子ビーム間の間隔の 5ないし 30%に形成されている請求項 2又は 3に記載 の画像表示装置。  [4] The spacers and the recesses are provided between adjacent electron beam passage holes of the grid, and are provided between an edge of a grid side end of each spacer and an edge of the recess. 4. The image display device according to claim 2, wherein the gap is formed at 5 to 30% of the interval between the adjacent electron beams.
[5] 上記各スぺーサおよび各凹所は、上記グリッドの隣合う電子ビーム通過孔間に設け られ、上記各凹所の深さは、上記隣合う電子ビーム通過孔間の間隔の 5ないし 30% に形成されてレ、る請求項 1なレ、し 3のレ、ずれか 1項に記載の画像表示装置。  [5] The spacers and the recesses are provided between adjacent electron beam passage holes of the grid, and the depth of each recess is 5 to 5 times the interval between the adjacent electron beam passage holes. 3. The image display device according to claim 1, wherein the image display device is formed at 30%.
[6] 上記グリッドは、上記第 1基板に対向した第 1表面と、上記第 2基板に対向した第 2 表面と、上記第 1および第 2表面にそれぞれ形成された複数の凹所と、を有し、上記 スぺーサは、上記第 1表面上で上記凹所内に立設された複数の第 1スぺーサと、上 記第 2表面上で上記凹所内に立設された複数の第 2スぺーサと、を含んでいる請求 項 1に記載の画像表示装置。 [6] The grid includes a first surface facing the first substrate, a second surface facing the second substrate, and a plurality of recesses respectively formed on the first and second surfaces. A plurality of first spacers erected in the recess on the first surface, and a plurality of first spacers erected in the recess on the second surface. 2. The image display device according to claim 1, comprising two spacers.
[7] 蛍光面が形成された第 1基板と、 [7] a first substrate having a phosphor screen formed thereon,
上記第 1基板と所定の隙間を置いて対向配置されているとともに上記蛍光面を励 起する複数の電子放出源が設けられた第 2基板と、  A second substrate provided with a plurality of electron emission sources that are opposed to the first substrate with a predetermined gap and that excites the phosphor screen;
上記第 1および第 2基板の間に設けられ上記第 1および第 2基板に作用する大気 圧荷重を支持するスぺーサ構体と、を備え、  A spacer structure provided between the first and second substrates and supporting an atmospheric pressure load acting on the first and second substrates,
上記スぺーサ構体は、上記第 1および第 2基板に対向しているとともに、それぞれ 上記電子放出源に対向した複数の電子ビーム通過孔を有した板状のグリッドと、上 記グリッドの少なくとも一方の表面上に立設された複数のスぺーサと、を有し、上記グ リツドは上記少なくとも一方の表面に形成され各スぺーサの上記グリッド側端の周囲 に位置した複数の溝を有してレ、る画像表示装置。  The spacer structure faces the first and second substrates, and has a plate-like grid having a plurality of electron beam passage holes facing the electron emission sources, and at least one of the grids. A plurality of spacers erected on the surface of the grid, and the grid has a plurality of grooves formed on the at least one surface and positioned around the grid side end of each spacer. Image display device.
[8] 上記各スぺーサは、上記グリッドの隣合う電子ビーム通過孔間に設けられ、上記各 溝の幅は、上記隣合う電子ビーム間の間隔の 5ないし 30 Q/oに形成されてレ、る請求項[8] Each of the spacers is provided between adjacent electron beam passage holes of the grid, and the width of each groove is formed to be 5 to 30 Q / o of the interval between the adjacent electron beams. Claims
7に記載の画像表示装置。 8. The image display device according to 7.
[9] 上記各スぺーサは、上記グリッドの隣合う電子ビーム通過孔間に設けられ、上記各 溝の深さは、上記隣合う電子ビーム間の間隔の 5ないし 30%に形成されている請求 項 7または 8に記載の画像表示装置。 [9] Each of the spacers is provided between adjacent electron beam passage holes of the grid, and a depth of each groove is formed to be 5 to 30% of a distance between the adjacent electron beams. The image display device according to claim 7.
[10] 上記グリッドは、上記第 1基板に対向した第 1表面と、上記第 2基板に対向した第 2 表面と、上記第 1および第 2表面にそれぞれ形成された複数の上記溝と、を有し、上 記スぺーサは、上記第 1表面上に立設された複数の第 1スぺーサと、上記第 2表面上 に立設された複数の第 2スぺーサと、を含んでいる請求項 7に記載の画像表示装置 [10] The grid includes a first surface facing the first substrate, a second surface facing the second substrate, and a plurality of the grooves formed on the first and second surfaces, respectively. Wherein the spacer includes a plurality of first spacers erected on the first surface and a plurality of second spacers erected on the second surface. 8. The image display device according to claim 7, wherein
PCT/JP2004/011620 2003-08-21 2004-08-12 Image display device WO2005020271A1 (en)

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JP2006073412A (en) * 2004-09-03 2006-03-16 Toshiba Corp Image display device

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