WO2005001166A1

WO2005001166A1 - Process for producing metal plating film, process for producing electronic part and plating film forming apparatus

Info

Publication number: WO2005001166A1
Application number: PCT/JP2004/009353
Authority: WO
Inventors: Nobuhiro Higashihara; Hideto Sakoda; Atsuyuki Nakagawa; Yoshiharu Dan; Katsunori Kita; Kouichirou Ikeuchi
Original assignee: Kyocera Corporation
Priority date: 2003-06-27
Filing date: 2004-06-25
Publication date: 2005-01-06
Also published as: CN1813084A; CN1813084B; US20060163073A1

Abstract

A process for producing a metal plating film, comprising providing a substrate with convex curved surface, depositing a metal plating film on the substrate surface and detaching the metal plating film from the substrate. The substrate surface on which the metal plating film is deposited is convex curved, so that the metal plating film of convex sectional configuration is formed on the substrate surface. Internal stress (tensile stress) occurs within the thus formed metal plating film, so that when the metal plating film is detached from the substrate and transferred on a dielectric sheet, the metal plating film is transfigured toward planarization. Therefore, on transfer recipient materials, such as the dielectric sheet, having a metal plating film transferred thereonto, deformation and damaging of such a metal plating film can be effectively prevented to thereby contribute to an improvement of production efficiency.

Description

Specification

Metal plating film forming method, electronic component manufacturing method and plating film forming apparatus <Technical field>

The present invention relates to a method for forming a metal plating film used as a conductor pattern of an electronic component such as a capacitor, an inductor, a filter, a circuit board, and the like, and an electronic component formed by combining the metal plating film and a dielectric layer. The present invention relates to a manufacturing method, and a plating film forming apparatus used for forming the metal plating film.

Conventionally, electronic components such as capacitors, inductors, filters, and circuit boards have been formed using dielectric materials such as ceramic materials and conductor materials.

As such a conventional electronic component, for example, a plurality of ceramic layers having a predetermined dielectric constant are laminated by alternately interposing first internal electrodes and second internal electrodes therebetween. A multilayer capacitor in which a pair of external electrodes electrically connected to the first and second internal electrodes respectively is provided on a side surface or a main surface of the multilayer body is well known.

In such a multilayer capacitor, a predetermined voltage is applied between the first internal electrode and the second internal electrode, and a ceramic layer disposed between the first internal electrode and the second internal electrode. The capacitor functions as a capacitor by forming a predetermined capacitance in the capacitor. Further, the above-described multilayer capacitor is manufactured through the following steps (for example, see Japanese Patent Application Laid-Open No. 2000-244650).

First, an organic binder and an organic solvent are added to and mixed with a predetermined ceramic material powder to prepare a slurry-like inorganic composition, which is then formed by a conventionally well-known doctor plate method or the like to obtain a sheet having a predetermined thickness. By forming into a ceramic green sheet, a ceramic green sheet is formed.

Next, a conductor paste containing a metal such as nickel as a main component is printed in a predetermined pattern on the main surface of the obtained ceramic green sheet by screen printing or the like. By stacking a plurality of these, a laminate of ceramic green sheets is formed. Subsequently, the laminate is fired at a high temperature to form a laminate of ceramic layers with the internal electrodes interposed.

Finally, a conductor paste is applied to the end face of the laminate by a well-known diving method or the like, and the paste is baked to form external electrodes, whereby a multilayer capacitor is manufactured.

By the way, in recent years, with the miniaturization of electronic devices, there has been a demand for miniaturization of electronic components. In the case of the above-mentioned multilayer capacitor, various studies have been made to make individual ceramic layers and internal electrodes thin. I have.

For example, in the conventional multilayer capacitor described above, in order to reduce the thickness of the internal electrode, the average particle size of the metal powder contained in the conductor paste used for forming the internal electrode is set to, for example, 0.1. It is important to make it as small as 3 Atm.

However, if the particle size of the metal powder contained in the conductor paste is extremely small, the dispersibility of the metal powder becomes worse due to the aggregation of the metal powder in the conductor paste. It was difficult to obtain a conductor paste having characteristics suitable for printing and the like.

Even if it is possible to obtain a conductor paste having characteristics suitable for screen printing, etc., by adjusting various components contained in the conductor paste, apply this thinly on a ceramic green sheet. When firing, the metal powder in the conductor paste moves during firing, which causes the disadvantage that the continuity of the internal electrodes is lost.In the worst case, the internal electrodes are separated. Was. Therefore, in order to solve the above-mentioned drawbacks, it has been studied to manufacture a multilayer capacitor using a thin metal plating film. In this case, a multilayer body is formed by laminating a plurality of ceramic green sheets on which the metal plating film is adhered, and firing this at a high temperature produces a multilayer capacitor.

The metal plating film serving as the internal electrode of such a multilayer capacitor forms a mask having an opening pattern having a shape corresponding to the internal electrode on a metal substrate, and immerses the substrate in a plating tank. It is formed by depositing a metal by a well-known electrolytic plating method on the surface of the substrate located in the opening of the mask. A ceramic green sheet or the like is pressed against the main surface of such a substrate to form a mask formed inside the mask. The metal plating film is transferred onto one main surface of the ceramic green sheet, whereby the metal plating film is formed on the ceramic green sheet.

However, the above-described manufacturing method using the metal plating film has a disadvantage that a large internal stress (tensile stress) is generated in the metal plating film when the metal plating film is deposited. Therefore, if the surface of the metal plate used for depositing the metal plating film is flat, if the metal plating film is peeled off from the metal plate, the metal plating film will protrude in the direction opposite to the deposition direction. Trying to bend, so-called "warp" occurs. For this reason, when the metal plating film is transferred to the ceramic green sheet, a defect such as deformation or cracking of the ceramic green sheet or the metal plating film or delamination during firing is induced.

Furthermore, in the above-described conventional manufacturing method, when firing a laminate made of a ceramic green sheet, if the peak temperature is too high, the metal forming the metal plating film is melted, so that the internal electrode is formed. It may be finely divided and lose its function as a multilayer capacitor. On the other hand, if the firing temperature is too low, the adhesion between the ceramic layer formed by firing the ceramic green sheet and the metal plating film (internal electrode) becomes low, and defects such as delamination are induced.

An object of the present invention is to provide a method for forming a metal plating film that can obtain a metal plating film having good peelability and no curvature.

Another object of the present invention is to make it possible to manufacture a small-sized electronic component by reducing the thickness of the conductor layer, and to effectively prevent the conductor layer and the dielectric layer from being deformed or damaged. To provide a method for manufacturing an electronic component.

It is another object of the present invention to provide a metal film forming apparatus excellent in productivity and capable of obtaining a metal film having good peelability and no curvature.

In the method for forming a metal plating film of the present invention, a metal substrate having a convex curved surface is prepared, a metal plating film is deposited on the surface of the substrate, and the metal plating film is separated from the substrate. This is a method for obtaining a plating film.

Further, in the method for manufacturing an electronic component according to the present invention, there is provided a step A of depositing a metal plating film on the surface of a base, and the metal plating film is peeled from the substrate to form a metal plating film. A step B of adhering the dielectric sheet to each other; and heat-treating the dielectric sheet on which the metal plating film is formed at a temperature lower than the melting point of the metal forming the metal plating film. Step C) of obtaining an electronic component having a portion in which a conductor layer is applied on a dielectric layer.

According to the present invention described above, since the surface of the base on which the metal plating film is deposited is formed into a convex curved surface, a metal plating film having a convex cross section is formed on the surface of the base. . Since an internal stress (tensile stress) is generated in the metal print film thus obtained, when the metal print film is peeled off from the substrate and transferred to a dielectric sheet, the metal print film is deformed in the direction of flattening. Therefore, it is possible to effectively prevent the metal plating film from being deformed or damaged in a material to be transferred such as a dielectric sheet to which the metal plating film has been transferred, thereby improving the productivity.

In addition, since the metal plating film described above is heat-treated together with the dielectric sheet at a temperature lower than the melting point of the metal forming the metal plating film, the metal plating film is melted and the metal plating film is separated during the heat treatment. Therefore, a conductor layer having excellent continuity can be formed.

In the method for forming a metal plating film, for example, a substrate having a columnar surface can be used as the substrate. A part of the surface of the substrate is immersed in a plating solution in a plating tank, and an electric field is applied between the substrate and the plating tank while rotating the substrate around an axis. A metal plating film can be deposited on the substrate.

Further, the plating film forming apparatus of the present invention comprises: a plating tank into which a plating liquid is injected; and a rotatable substrate having a cylindrical surface, and a part of the surface being arranged to be immersed in the plating liquid. An electrolysis applying means for applying an electric field between the substrate and the plating tank; a metal plating film on the surface of the substrate pulled up from the plating solution on the downstream side in the rotational direction of the substrate; And a transfer means for pressing against The substrate on which the metal plating film is deposited is formed in a cylindrical or columnar shape. In the deposition process of the metal plating film, a part of the substrate is immersed in the plating liquid in the plating tank while rotating the substrate around an axis. An electric field is applied to the plating solution between the substrate and the plating tank to form a metal plating film, thereby continuously forming a metal plating film. As a result, productivity can be improved. Also, the current density between the base and the plating tank is made substantially uniform, so that the metal plating film can be formed with a substantially constant thickness.

After pressing the transfer material against the substrate, the metal plating film on the substrate surface pulled up from the plating liquid is transferred to the resin film once, and the dielectric sheet is adhered from above. Or if the metal plating film is re-transferred onto the dielectric sheet, the dielectric sheet does not come into direct contact with the mask layer on the substrate surface formed of the hard material. Therefore, there is an advantage that the metal plating film can be favorably adhered to the dielectric sheet without damaging the dielectric sheet by contact with the mask layer.

When peeling the metal plating film from the base, the metal plating film may be directly transferred onto a dielectric sheet of a resin film on which a dielectric sheet is formed. According to this method, although the dielectric sheet comes into contact with the mask layer on the surface of the base formed of a hard material, the metal plating film can be directly transferred onto the dielectric sheet without the interposition of a resin film. Therefore, the device configuration can be simplified.

Further, after the metal plating film is peeled from the substrate and transferred to a resin film, a dielectric slurry is adhered so as to cover the metal plating film transferred to the resin film, and the resin to which the dielectric slurry has adhered is attached. The film may be dried. According to this method, the metal print film on the resin film can be embedded in the dielectric sheet. Thus, the dielectric sheet can be formed substantially flat without forming a step between the portion where the metal make-up film exists and the portion where the metal make-up film does not exist. Even if a plurality of such dielectric sheets are stacked, the deformation of the metal plating film can be suppressed well, so that electrical defects such as delamination can be effectively prevented.

In the present invention, a mask layer for regulating a deposition region of the metal plating film may be formed on a surface of the base. The mask layer comprises, for example, diamond 'like' carbon (DLC) or graphite-like carbon (GLC). In this case, sufficient electrical insulation can be obtained with a relatively thin mask layer. In addition to the above, the metal plating film can be made to have good releasability when it is peeled from the substrate, and since the DLC and GLC are hard, the metal plating film can be used as a dielectric sheet. In the case of direct transfer, there is an advantage that the dielectric sheet hardly adheres to the mask layer surface and stable transfer can be repeated.

In the present invention, it is preferable that the metal plating film contains non-conductive fine particles. If the metal plating film containing such non-conductive fine particles contains the non-conductive fine particles in the plating solution, the non-conductive fine particles are deposited when the metal plating film is deposited on the substrate surface. Is obtained by adhering to the metal component. Since the metal conductive film containing the non-conductive fine particles is formed by the non-conductive fine particles adhering to the metal component deposited on the surface of the substrate, the adhesion between the metal conductive film and the substrate becomes relatively small, and The film can be easily peeled from the substrate.

In the present invention, it is preferable that the peak temperature during heat treatment of the dielectric sheet including the laminated metal plating film is higher than the recrystallization temperature of the metal constituting the metal plating film. The metal plating film described above is heat-treated with the dielectric sheet at a temperature lower than the melting point of the metal forming the metal plating film and higher than the recrystallization temperature, so that the metal plating film melts during the heat treatment. The metal plating film is not divided, and a conductive layer having excellent continuity can be formed.Also, the metal that forms the metal plating film is recrystallized to moderately soften the metal. A good conductor layer having excellent adhesion to the dielectric layer can be obtained.

Further, in the present invention, after the metal plating film is peeled off from the substrate and transferred to a resin film, a portion of the surface where the metal plating film is formed and a portion where the metal plating film is not present are present on the resin film. A thin dielectric sheet having a thickness substantially equal to the metal plating film may be pressed against both of them to selectively adhere the dielectric sheet to a portion of the resin film where the metal plating film does not exist. A metal plating film is transferred to one main surface of a resin film having an adhesive layer, and a dielectric sheet having a thickness substantially equal to that of the metal plating film is pressed against both a portion where the metal plating film exists and a portion where the metal plating film does not exist. By selectively adhering a dielectric sheet only to a portion where the adhesive layer is exposed (a portion where no metal plating film is present), a metal plating film and a dielectric film are formed on the resin film. The body sheet adheres and forms substantially flush with each other without forming a large gap therebetween. Therefore, when these are separated from the resin film and a plurality of dielectric sheets are laminated with a dielectric sheet or the like interposed therebetween to form a laminate of dielectric sheets, both main surfaces of the laminate are made flat. Therefore, even if an electronic component is manufactured by heat-treating this, there is almost no electrical failure such as delamination, and an electronic component having excellent reliability and productivity can be obtained. .

In the plating film forming apparatus of the present invention, the surface of the base may be divided into a plurality of blocks detachably supported with respect to a core of the base. With this configuration, processing such as mask formation and maintenance can be performed for each member in units of blocks, and the handling and assembly of the equipment can be simplified.

Further, in the plating film forming apparatus of the present invention, the plating tank has a first potential region that is held at a more positive potential than the substrate and deposits a metal plating film on the substrate surface. A second layer which is located downstream of the substrate in the rotation direction and is kept at a negative potential with respect to the substrate and re-dissolves the surface layer of the metal plating film deposited on the surface of the substrate in the plating solution. In this configuration, the surface portion of the metal plating film once formed, particularly the contact portion with the substrate, is redissolved in the plating solution, and a minute gap is formed between the metal plating film and the substrate. By this, the releasability of the metal print film can be improved. Electrical isolation between the two regions can be realized by interposing an insulating member between the first potential region and the second potential region.

FIG. 1 is a cross-sectional view showing a multilayer capacitor manufactured by the method for manufacturing an electronic component of the present invention.

FIG. 2 shows the plating of the present invention in which a substrate 9 is rotatably arranged in a plating tank 18 and a transfer means of a metal plating film is arranged on a side of the substrate 9 opposite to the plating tank 18. It is a side view which shows a film forming apparatus typically.

FIG. 3 is a plan view of the base 9 used in this plating device for forming a plate S, viewed from above (A direction in FIG. 2). FIG. 4 is an enlarged sectional side view showing the structure of the substrate surface used in the plating film forming apparatus.

FIG. 5 shows a plating film of the present invention in which the metal plating film 8 once transferred to the resin film 20 is transferred again to the surface of the ceramic green sheet 26 held on the resin film 25. It is a side view which shows an apparatus typically.

FIG. 6 shows a plating film forming apparatus of the present invention in which a metal plating film 8 deposited on a substrate 9 is directly transferred to a main surface of a ceramic green sheet 26 held on a resin film 25. It is a side view which shows typically.

FIG. 7 illustrates a method of forming a thin dielectric sheet 43 for filling a step in a portion where the metal plating film 8 does not exist, with respect to the resin film 20 on which the metal plating film 8 is transferred from the base 9. FIG.

FIG. 8 shows that a ceramic slurry 31 is applied to the main surface of the resin film 20 to which the metal plating film 8 has been transferred so as to cover the metal make-up film 8, which is dried to form a metal plating film 8. FIG. 1 is a side view schematically showing a plating film forming apparatus of the present invention in which ceramic green sheets 26 having embedded therein are obtained. '' FIG. 9 schematically shows the plating film forming apparatus of the present invention in which plating tank 18 is divided into a high-potential area 18 A functioning as an anode and a low-potential area 18 B functioning as a cathode. FIG.

It is.

FIG. 10 shows that a plurality of insulating partition members 35 are arranged at predetermined intervals on the surface of the base 4, and that the conductive film 6 is provided on the insulating members 34 and between the insulating partition members 35. FIG. 2 is a side view schematically showing a plating film forming apparatus of the present invention in which a base member 4 is formed by fitting a block member 36 on which a mask layer 7 is formed.

FIG. 11 is a side view schematically showing the plating film forming apparatus of the present invention in which not only the surface layer of the base 4 but also the core is blocked.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. One multilayer capacitor

FIG. 1 is a cross-sectional view showing a multilayer capacitor manufactured by a method for manufacturing an electronic component according to the present invention. FIG. The multilayer capacitor 1 shown in FIG. 1 includes a dielectric layer 4 stacked on a plurality of layers, an internal electrode 3 formed on each dielectric layer 4, an insulating layer 2 sandwiching the dielectric layer 4 from above and below, It is composed of electrodes 5.

In the multilayer capacitor 1, internal electrodes 3 are formed on a dielectric layer 4 having a predetermined dielectric constant, and are alternately laminated to form a rectangular parallelepiped laminate. An insulating layer 2 made of the same material as the dielectric layer 4 is formed on both upper and lower surfaces of the laminate. Further, external electrodes 5 that are electrically connected to the internal electrodes 3 are formed on both ends of the laminate. The outer shape of the multilayer capacitor 1 is formed, for example, with dimensions of 1.2 mm in width, 2 mm in length, and 1.2 mm in height.

The dielectric layer 4 is formed of a ceramic material or an organic material. When made of a ceramic material, for example, it is formed of barium titanate, calcium titanate, strontium titanate, or the like. When it is made of an organic material, it is formed of, for example, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PP (polypropylene), PPS (polyphenylene sulfide), or the like. The thickness of the dielectric layer 4 is set, for example, from 1.0 zm to 4.0 m per layer, and the number of layers is set, for example, from 30 layers to 600 layers. In addition, as the material of the insulating layer 2, the same ceramic material or organic material as that of the dielectric layer 4 is used.

The internal electrode 3 interposed between the dielectric layers 4 is made of, for example, nickel, copper, silver, gold, platinum, palladium, chromium, an alloy of these metals, or the like, and has a thickness of, for example, 0.5 m to 2.5 m. Set to O ^ m.

The material and thickness of the dielectric layer 4 and the number of layers, the facing area of the internal electrodes 3, and the like are appropriately determined depending on the desired capacitance of the multilayer capacitor.

—Mekki film forming equipment

The multilayer capacitor described above is manufactured using the plating film forming apparatus shown in FIGS.

FIG. 2 is a side view schematically showing the plating film forming apparatus of the present invention. FIG. 3 is a plan view of the substrate 9 used in the plating fluge forming apparatus as viewed from above (A direction in FIG. 2). FIG. 2 is an enlarged sectional side view showing a structure of a substrate surface used in the plating film forming apparatus. The printing film forming apparatus includes a base 9 rotatably arranged in a printing tank 18. The transfer means is arranged on the opposite side of the plating tank 18 from the transfer means.

Hereinafter, each component of the metal film forming apparatus will be described. In addition, among the components described below, for example, the cleaning unit, the cleaning liquid suction unit, the plating liquid suction unit, and the circulation device are not essential components in the plating film forming apparatus of the present invention but are positioned as additional components. Things.

= Substrate =

The base 9 functions as a cathode of the plating film forming apparatus. For example, it is formed of a conductive metal such as stainless steel, iron, aluminum, copper, nickel, titanium, tantalum, and molybdenum. A conductive film 6 (see FIG. 4) is formed on the entire surface of the base 9, and a mask layer for exposing the conductive film 6 to a predetermined pattern is formed on the surface of the conductive film 6. 7 is formed. Hereinafter, the surface of the substrate 9 and the conductive film 6 may be referred to as “the surface of the substrate”.

The surface of such a substrate 9 is cylindrical, the radius of curvature is set, for example, in the range of 50 mm to 200 mm, and the surface roughness is, for example, 0. Set to 5 m or less. That is, R y ≤ 0.5 Aim.

As the conductive film 6 formed on the surface of the base 9, for example, a material having a specific resistance of 10 ² Ωcm or less is used. In order to make the current density uniform during electroplating, a material having a specific resistance of 10 to ³ Ωcm or less is preferable. Examples of the material of the conductive film 6 having a specific resistance of 10 to ³ Qcm or less include, for example, titanium aluminum nitride, chromium nitride, titanium nitride, titanium chromium nitride, titanium carbonitride, titanium carbide, and titanium carbide. DLC (diamond-like carbon) or the like can be used. Further, among the materials of the conductive film 6, in order to improve the releasability of the metal plating film 8, the conductive film 6 may be formed of titanium aluminum nitride, chromium nitride, titanium nitride, titanium nitride nitride, titanium carbonitride, or the like. Preferably, it is formed. In particular, in order to enhance the durability, it is preferable to form the conductive film 6 with titanium nitride or the like. The conductive film 6 is formed on the surface of the base 9 by a conventionally known thin film forming method, for example, a sputtering method, an ion plating method, a chemical vapor deposition method (CVD), or the like.

The mask layer 7 formed on the surface of the conductive film 6 defines the deposition region of the metal plating film 8. It is to control. It is preferable that the mask layer 7 has sufficient electric insulation. For example, the resistivity may be set to more than 1 0 ⁴ Ω · cm. A material having a Beakers hardness Hv of, for example, 100 or more and a friction coefficient a of, for example, 0.3 or less is used. Materials satisfying such characteristics include, for example, amorphous structure DLC and GLC (Graphite-like-force-carbon).

As described above, by forming the mask layer 7 for regulating the deposition region of the metal make-up film 8 on the surface of the base 9, the base 9 can be converted into the make-up liquid 19 without a complicated process such as photoetching. The metal plating film 8 having a desired pattern can be easily obtained simply by immersion and applying an electric field between the plating tank 18 and the substrate 9 described later.

It is preferable that the thickness of the mask layer 7 is the same as the thickness of the metal plating film 8 or slightly larger than the thickness of the metal plating film 8. This is to prevent the metal plating film 8 grown beyond the thickness of the mask layer 7 from spreading on the mask layer 7.

Here, the angle of the corner formed between the side surface and the bottom surface of the mask layer 7 (see FIG. 4) is preferably set to 90 degrees or less, for example, 90 degrees to 85 degrees. If the angle is set to 90 degrees or less, the area of the lower surface of the metal plating film 8 in contact with the base 9 becomes smaller than the area of the upper surface. When transferring to the like, the outer periphery of the metal plating film 8 is less likely to be caught on the mask layer 7, and the metal plating film 8 can be easily separated.

The mask layer 7 is formed, for example, by applying DLC, GLC, or the like to a predetermined thickness on the surface of the substrate 9 by a conventionally known thin film forming method such as a sputtering method, an ion plating method, and a CVD method. It is formed by processing into a pattern having a plurality of openings by employing a well-known photo-etching method or the like. The opening is a portion corresponding to the deposition region of the metal plating film 8.

DLC and GLC used as the material of the mask layer 7 have relatively high electric resistance, so that no plating is deposited on the surface of the mask layer 7 and the surface has good peelability and friction resistance. Is also small. Therefore, when the metal print film 8 is transferred to the resin film 20 or the like as the transfer target, the transfer target is less likely to be damaged. As described above, by selecting the material of the mask layer 7, the durability of the base 9 is improved. As a result, a high quality metal plating film 8 can be obtained even when used repeatedly over a long period of time.

The base 9 as described above is rotatably supported by a rotating shaft 10 as shown in FIG. The rotating shaft 10 is connected to the main shaft of the electric motor, and the base 9 is rotated around the axis by transmitting the rotating motion of the electric motor. The rotating shaft 10 is connected to the power supply 11 via a rotating brush, whereby a negative voltage is applied to the base 9. That is, the base 9 functions as a cathode of the plating film forming apparatus.

= Make tank =

The printing tank 18 functions as an anode of the plating film forming apparatus, and at the same time, functions as a container for forming a printing bath by filling the plating liquid 19 therein.

The inner surface shape of the plating tank 18 and the surface of the base 9 are substantially concentrically arranged so that a certain space is formed between them. The distance between the surface of the base 9 and the inner surface of the plating tank 18 is, for example, 2 mn! Set to ~ 50 mm.

The plating liquid 19 flows between the base 9 and the plating tank 18 at a predetermined flow rate by a circulating device 15 described later. When a nickel plating film is formed, a nickel plating solution suitable for obtaining a metal plating film 8 having a small internal stress is preferably used as the plating solution 19. As such a nickel sulfamate plating solution, for example, an aqueous solution having a composition of 30 g / liter of nickel chloride, 300 g of nickel sulfamate, and 30 g of boric acid is used. The value is set to, for example, 3.0 to 4.2. In particular, in order to obtain a metal plating film 8 having a small internal stress, the pH value is set to 3.5 to 4.0 and the temperature of the plating solution 19 is set to 45 ° C to 50 ° C. It is better to keep it.

Preferably, non-conductive fine particles 30 made of ceramic, resin, or the like are added to the plating liquid 19.

In addition, the above-mentioned plating solution 19 may contain a pH buffer comprising boric acid, nickel formate, nickel acetate, etc., and a pipe comprising sodium lauryl sulfate, if necessary. Inhibitors, stress reducing agents composed of chemical substances obtained by adding sulfonic acid, sulfonate, sulfonamide, sulfonimide, etc. to aromatic hydrocarbons such as benzene and naphthalene, and curing composed of aromatic sulfonic acids and their derivatives An agent such as butyne diol, 2-butyne 1.4 diol, ethylene cyanohydrin, formaldehyde, coumarin, pyrimidine, pyrazole, imidazole and the like may be appropriately added and used. Examples of the stress reducing agent include saccharin, paratoluenesulfonamide, benzenesulfonamide, benzenesulfonimide, sodium benzenedisulfonate, sodium benzenetrisulfonate, sodium naphthalene sulfonate, and Nafrent For example, sodium resulfonate is used.

By applying a potential between the above-described plating tank 18 and the base 9, a conventionally known electrolytic plating method can be performed. That is, by applying a potential between the base 9 serving as a cathode and the plating tank 18 serving as an anode, the metal plating film 8 is deposited on a region of the surface of the base 9 where the mask layer 7 does not exist.

Further, since the printing liquid 19 in the printing tank 18 always flows between the base 9 and the printing tank 18 in a predetermined direction as described above, the film quality of the metal plating film 8 is reduced. There is an advantage that it can be made homogeneous.

= Transfer means 2

The transfer means includes a resin film transfer means for transferring the metal plating film 8 to one main surface of the resin film 20, and a metal plating film 8 which transfers one main surface of the ceramic green sheet 26 to the resin film 20. And a ceramic green sheet transfer means to be attached to the sheet. ·

The resin film transfer means includes a feeding section 22, a pressure roll 23, and a winding section

Consists of 24 and 4. The delivery section 22 is for connecting a needle shaft on which the resin film 20 with the adhesive layer is wound to a motor, and rotating the shaft by a predetermined amount to send it out. The pressure roll 23 presses the base 9 while rotating the resin film 20 having the adhesive layer. The winding section 24 is a pressure roll

It is composed of a roll for winding the resin film 20 with the adhesive layer onto which the metal plating film 8 has been transferred after passing through 23 with a constant force. At least the surface of the pressure roll 23 is coated with an elastic material such as urethane rubber coat, neoprene rubber coat, or natural rubber coat so that the resin film 20 can be evenly pressed against the substrate 9. Is preferred. The pressing roll 23 may be a rotatable roller that is not connected to an electric motor, or may be a roller that is connected to an electric motor to perform a rotating operation.

The resin film 20 is made of, for example, a polyethylene terephthalate film (PET film) having a thickness of 20 m to 50 m, and its main surface (the surface onto which the metal plating film 8 is transferred) has a thickness of 0.05 05π! What formed the adhesive layer 21 of ~ 10 zm is used. The adhesive layer 21 is formed, for example, by applying an acrylic (solvent), acrylemulsion (aqueous), petital, phenol, silicone, or epoxy adhesive to the main surface of a PET film or the like. And dried. It is preferable to use one adjusted so that the adhesive strength after drying is, for example, 0.1 N / cm.

Further, it is preferable that the adhesive layer 21 is formed of a material which is surely thermally decomposed at a relatively low temperature. Specifically, even when the metal plating film 8 adheres, it is preferable to use an acrylic (solvent), acrylemulsion (water), or petital-based adhesive that thermally decomposes upon firing. Among these, it is particularly preferable to use an acrylic pressure-sensitive adhesive having good releasability. The adhesive force of such an adhesive layer 21 is set, for example, to 0.005 N / cm to 1.0 N / cm, and to improve the transferability, 0.01 N / cm to 1.0 N / cm. cm is preferable, and for better releasability, 0.0 1N / cn! ~ 0. It is preferable to set to SNZcm.

Such a resin film 20 is sequentially supplied to the base 9 side by the sending-out section 22, and the side on which the adhesive layer 21 is formed is, for example, with respect to the surface of the base 9 on which the metal print film 8 is formed. Pressing is performed by the pressing roller 23 with a pressing force of 1 and 1 ON. Thus, the metal plating film 8 is transferred onto the resin film 20. Thereafter, the resin film 20 is wound by the winding unit 24 at the same speed as the peripheral speed of the surface of the base 9.

The ceramic green sheet transfer means includes a supply unit 28, a pressure roll 27, It consists of a storage section 29. The supply unit 28 connects a shaft of a roll around which the resin film 25 with the ceramic green sheet 26 is wound to an electric motor, and rotates the shaft by a predetermined amount to feed it. The pressure roll 27 brings the ceramic green sheet 26 into contact with the metal print film 8 on the resin film 20 at a predetermined pressure. Thus, the ceramic green sheet 26 is transferred onto the metal print film 8 of the resin film 20. The storage section 29 winds up the resin film 25 having passed through the pressure roll 27 with a constant tension. As the pressure roll 27, a material and a structure similar to those of the pressure roller 23 described above are used.

Two cleaning means:

The cleaning means 12 is for cleaning the surface of the substrate 9 lifted from the plating tank 18. Specifically, it is for washing away the metal plating film 8 formed on the surface of the base 9 and the plating liquid 1 remaining on the surface of the mask layer 7.

The cleaning means 12 includes a liquid supply means for supplying a cleaning liquid to the surface of the substrate 9 on which the metal plating film 8 and the mask layer 7 are formed, and a collecting means for collecting the cleaning liquid used for cleaning. . The cleaning liquid is supplied to the cleaning box disposed in close proximity to the surface of the substrate 9 by the liquid supply means, and the cleaning liquid is sprayed onto the surface of the substrate 9 in the cleaning box to remove the remaining plating liquid from the substrate 9. Rinse off the surface.

As the cleaning liquid, for example, water, alcohol, acetone, toluene and the like are used. It is preferable that impurities in the cleaning liquid be suppressed to 100 Oppm or less. In order to obtain a higher cleaning effect, an air supply means for blowing air onto the surface of the base 9 may be separately provided.

= Cleaning liquid suction means =

The cleaning liquid suction means 13 is arranged downstream of the cleaning means 12 in the rotation direction of the base 9. After the cleaning liquid 12 is washed away by the cleaning means 12, the metal plating film 8 and the mask layer 7 are removed. This is for completely removing the cleaning liquid remaining on the surface. The cleaning liquid suction means 13 is formed of a stainless steel plate or the like, and a plurality of suction holes are provided on the surface of the cleaning liquid suction means 13. The remaining cleaning liquid is removed. The cleaning liquid suction means 13 has a fine surface, such as urethane sponge or artificial leather, on the surface. Attach one with fine holes. The cleaning liquid suction means 13 may have any of a cylindrical shape, a columnar shape, and a flat shape.

= Messy liquid suction means 2

The plating liquid suction means 14 is disposed on the upstream side in the rotation direction of the base 9 with respect to the cleaning means 12, and removes the plating liquid 19 remaining on the surface of the metal plating film 8 and the mask layer 7. belongs to.

The printing liquid suction means 14 is formed of a stainless steel plate or the like, and a plurality of holes are provided on the surface thereof in the same manner as the cleaning liquid suction bow I means 13 described above. The liquid 19 is sucked. The same structure as that of the cleaning liquid suction means 13 is employed for the surface portion of the plating liquid suction means 14. It should be noted that the shape of the plating liquid absorbing means 1 14 may be any of a cylindrical shape, a columnar shape, and a flat plate shape. The circulation device 15 is for circulating the plating liquid 19 injected into the plating tank 18. A supply port 16 for the plating liquid 19 is provided at the center of the bottom of the plating tank 18 at a position facing the lowermost end of the base 9. The plating liquid 19 is supplied from the supply port 16 into the plating tank 18. The printing liquid 19 flows along the surface of the substrate 9 in the same direction as the rotation direction of the substrate 9 on the downstream side in the rotation direction of the substrate 9, and flows along the surface of the substrate 9 on the upstream side in the rotation direction of the substrate 9. It flows in the direction opposite to the direction of rotation of 9 and overflows from both ends of the tank 18. The overflowing liquid 19 is discharged to a circulation tank disposed outside thereof. Then, the plating liquid 19 stored in the circulation tank is sucked out from a suction port 17 provided at the bottom thereof, and is again supplied into the plating tank 18 from the supply port 16 by a pump.

In the course of the circulation of the plating liquid 19, a filtration filter may be provided to remove foreign substances, or the pH value of the plating liquid 19 ゃ the flow rate of the plating liquid 19, the non-conductive The concentration and the like of the conductive fine particles may be adjusted as necessary.

(1) Manufacturing method of electronic parts (1)

Next, a method for manufacturing a multilayer capacitor using the above-described plating film forming apparatus will be described for each process.

= Process 1 = First, a metal plating film 8 is formed on the surface of the above-described base 9 by an electrolytic plating method. Since the cross-sectional shape of the surface of the base 9 is circular, the cross-sectional shape of the metal plating film 8 is also formed as a convex curved surface having the same radius of curvature as the circle.

The base 9 is rotated around the rotation axis 10 at a predetermined rotation speed so that the lower region of the base 9 is immersed in the nickel sulfamate plating liquid 19 injected into the plating tank 18 or the like. A predetermined potential difference is applied to the plating tank 18 so that the current density is, for example, 2 AZdm ² to 15 A / dm ² . As a result, the metal plating film 8 is formed along the circular surface of the base 9 except for the region where the above-described mask layer 7 is formed.

The metal print film 8 formed in this manner is made of nickel, copper, silver, gold, platinum, palladium, chromium, or an alloy of these metals, and nickel having excellent heat resistance among these metal materials. It is preferable as a material for forming the internal electrodes 3 of the multilayer capacitor.

As described above, while rotating the base 9 around the axis, the base 9 is immersed in the plating solution 19 of the printing tank 18, and an electric field is applied between the base 9 and the printing tank 18 to apply the electric field to the surface of the base 9. The metal mask film 8 can be formed continuously, thereby improving the productivity of the multilayer capacitor. Moreover, in this case, since the current density between the base 9 and the plating tank 18 becomes substantially uniform, the metal plating film 8 can be formed with a substantially constant thickness.

In this case, if a large number of non-conductive fine particles 30 made of a ceramic or a resin are added to the plating liquid 19, a part of the non-conductive fine particles 30 comes in contact with the base 9. Thus, the metal plating film 8 is buried in the metal plating film 8. As a result, a metal plating film 8 containing the non-conductive fine particles 30 is formed.

Then, after the metal plating film 8 formed on the surface of the substrate 9 is pulled up from the plating liquid 19 by the rotation of the substrate 9, the plating liquid suction means 14, the cleaning means 12, and the cleaning liquid suction It is washed and dried by means 13.

= Process 2 =

Next, the metal print film 8 obtained in the step 1 is once transferred onto the resin film 20. Such a resin film 20 is sequentially supplied to the base 9 side by the delivery section 22. The surface of the resin film 20 on which the adhesive layer 21 is formed is pressed against the surface of the substrate 9 on which the metal plating film 8 is formed by a pressing roller 23, for example, with a pressing force of 10 N. . As a result, the metal plating film 8 is transferred onto the tree S film 20. Thereafter, the resin film 20 is wound by the winding unit 24. At this time, since the metal plating film 8 is formed on the surface of the circular base 9 so as to form a convex curved surface in the step 1, the metal plating film 8 is formed of a resin film.

When the metal plating film 8 is deposited, even if internal stress (tensile stress) is generated in the metal plating film 8, if the obtained metal plating film 8 is separated from the substrate 9 and deposited on the resin film 20, a convex curved surface is formed. The metal plating film 8 is deformed on the resin film 20 in a direction of flattening. Therefore, the metal plating film 8 is formed on the flat resin film 20 in a flat state without any distortion.

If a large number of nonconductive fine particles 30 made of ceramic or resin are added to the metal print film 8 on the base 9 as described above, these nonconductive fine particles 30 have poor adhesion to the base 9. Therefore, the metal plating film 8 can be relatively easily peeled from the base 9.

In order to improve the releasability of the metal plating film 8, the non-conductive fine particles 30 are arranged so that a large number of the non-conductive fine particles 30 are arranged on the plating deposition surface (the portion in contact with the conductive film 6).

It is preferable to distribute 30. In particular, the exposed area of the non-conductive fine particles 30 exposed on the surface of the metal plating film 8 is 0.01% with respect to the total area of the metal plating film 8.

It is preferable to set the ratio to be about 40%, since the metal plating film can be easily peeled off from the substrate, and the deformation of the metal plating film can be prevented. If this value is less than 0.01%, the deposition rate of the metal component on the metal plating film 8 increases, making it difficult to sufficiently lower the adhesion to the substrate 9, and from the surface of the substrate. When the metal plating film is peeled, the metal plating film may be deformed. If it exceeds 40%, the mechanical strength of the metal plating film itself decreases due to a decrease in the metal component in the metal plating film 8, so that when the metal plating film is peeled off from the substrate surface, the metal plating film is removed. Cracks may occur in the film.

When a ceramic material is used as such non-conductive fine particles 30, the dielectric material The same material as the ceramic material of the ceramic green sheet 26 used as the sheet is preferable.

On the other hand, when resin fine particles are used as the non-conductive fine particles 30, those having the same material as the organic binder contained in the ceramic green sheet 26 are preferable.

In addition, as the size of the non-conductive fine particles 30, it is preferable to use those having an average particle diameter smaller than the thickness of the metal plating film 8. By doing so, it is possible to effectively prevent the metal plating film 8 from being deformed when the metal plating film 8 is peeled from the substrate 9.

As such non-conductive fine particles 30, non-conductive fine particles 30 made of a ceramic material and non-conductive fine particles 30 made of a resin material may be mixed and used.

= Step 3 =

Next, a ceramic green sheet 26 as a dielectric sheet is further pressed on the resin film 20 to which the metal plating film 8 has been transferred, so that the ceramic green sheet 26 is formed on the metal plating film 8. Adhere to

The ceramic green sheet 26 has, for example, a thickness of 12 mm! While being supported on a resin film 25 composed of a PET film or the like having a length of about 100 m, it is wound around the supply port 28. When the ceramic green sheet 26 is supplied to the position where the ceramic green sheet 26 and the resin film 20 join, the two resin films 20 and 25 are superimposed and come into contact with the metal plating film 8 on the resin film 20. While this part is heated at a temperature of about 70 ° C by the heater provided inside the pressure roller 27, the resin film 25 is pressed by the pressure roller 27 with a pressing force of about 10 ON. Press to the film 20 side. As a result, the ceramic green sheet 26 is attached to the metal plating film 8. Thereafter, the resin film 25 from which the ceramic green sheet 26 has been peeled off is wound up by the storage section 29.

In this way, once the metal print film 8 is transferred onto the resin film 20 and then the ceramic green sheet 26 is overlaid and adhered thereon, the ceramic green sheet 26 is formed of a hard material. Since there is no direct contact with the mask layer 7 on the surface of the substrate, the ceramic green sheet 26 is used as the mask layer. The ceramic green sheet 26 can be satisfactorily adhered to the metal print film 8 without being damaged by contact with the metal paste 7.

In addition, since the metal plating film 8 is deformed in the direction of flattening as described above when peeled from the substrate 9, the main surface of the ceramic green sheet 26 is transferred to the metal plating film 8. Also, it is possible to effectively prevent the ceramic green sheet 26 and the metal plating film 8 from being deformed or cracked. Therefore, the productivity of the multilayer capacitor 1 can be improved.

The ceramic green sheet 26 supported on the resin S film 25 has a thickness of, for example, 1 m to 20 m, and an organic solvent, an organic binder, or the like is added to the ceramic material powder. A predetermined ceramic slurry obtained by mixing is applied to the main surface of the resin film 25 by a conventionally known coating method or printing method so that the thickness after firing is about 2 μm. By drying. As the resin film 25, a PET film having a thickness of 38 μm is used. On one main surface of such a resin film 25, a ceramic slurry is applied so that the thickness after firing becomes, for example, 2 m, and then dried to form a resin film 25 with ceramic green sheets 26. prepare. Next, the ceramic green sheet 26 of the resin film 25 is brought into contact with the metal print film 8 on the resin film 20 so that the contact portion has a radius of 100 mm and a length of 250 mm. The ceramic green sheet 26 is pressed against a resin film 20 with a metal plating film 8 by sandwiching the ceramic green sheet 26 with a pressing roller 27 at a pressure of 100 N and 70 ° C. Thereafter, the ceramic green sheet 26 is peeled off from the resin film 25.

= Process 4 =

Next, a plurality of ceramic green sheets 26 provided with the metal print film 8 obtained in the above-mentioned step 3 are prepared and, for example, pre-pressed at a pressure of 0.9 MPa while heating at a temperature of 60 ° C. Then, the laminate is formed by pressure bonding at a temperature of 70 ° C. and a pressure of 50 MPa by a conventionally known hydrostatic pressure press or the like.

-Step 5 =

Finally, the laminate obtained in step 4 is cut into a predetermined shape, and the obtained individual pieces are fired at a high temperature. The firing of the laminate is performed so that the temperature is lower than the melting point of the metal forming the metal plating film 8 and higher than the recrystallization temperature of the metal at least at one point during firing. As a result, the ceramic green sheet 26 becomes the dielectric layer 4 of the multilayer capacitor, and the metal print film 8 becomes the internal electrode 3.

Here, recrystallization of a metal is a phenomenon in which when a processed metal material is heated, the metal rapidly softens at a certain temperature and stabilizes to reduce internal strain. The temperature at which the recrystallization starts is called the recrystallization temperature. For example, in the case of nickel, the recrystallization temperature is 530 ° C to 660 ° C; the melting point is 148 ° C, and in the case of copper, the recrystallization temperature is 200 ° C to 250 ° C. C, the melting point is 1083 ° C. In the case of gold, the recrystallization temperature is about 200 ° C (and the melting point is 160 ° C. Therefore, when the metal plating film 8 is made of nickel, The firing of the laminate is performed, for example, at a temperature of 130 ° C.

By firing the metal plating film 8 at a temperature lower than the melting point of the metal forming the metal plating film 8 as described above, the disadvantage that the metal plating film 8 is melted during firing and the metal plating film 8 is divided. It is possible to form the internal electrode 3 that is reliably prevented and has excellent continuity.

Also, in this case, the peak temperature at the time of firing the laminate is set higher than the recrystallization temperature of the metal forming the metal plating film 8, so that the metal forming the metal plating film 8 at the time of firing. As the recrystallization progresses, the metal is appropriately softened, and the ceramic particles in the ceramic green sheet 26 enter the surface of the metal plating film 8. As a result, the adhesion between the metal plating film 8 and the ceramic green sheet 26 is improved, and as a result, a multilayer capacitor with few structural defects can be obtained.

Further, in this case, since the non-conductive fine particles 30 are embedded in the metal plating film 8 at the portions thereof, when a ceramic material is used as the non-conductive fine particles 30, the non-conductive fine particles 30 Are simultaneously fired when the ceramic green sheet 26 is fired, and are sintered and integrated with the ceramic component contained in the ceramic green sheet 26. As a result, the adhesion between the metal plating film 8 and the ceramic green sheet 26 is improved. In addition, when a resin material is used as the non-conductive fine particles 30, the non-conductive fine particles 30 are burned out during firing of the ceramic green sheet 26 to form voids. Because the ceramic component in 6 diffuses, Also in this case, the adhesion between the metal print film 8 and the ceramic green sheet 26 is improved.

= Process 6 =

Finally, a conductor paste for an external electrode is applied to both ends of the laminated body by a conventionally known diving method or the like, and after baking, the surface is plated to form an external electrode 5. As a result, the laminated capacitor 1 as a product is completed.

Modification of one manufacturing method

Next, another embodiment of the present invention will be described with reference to FIG. Note that the same steps as those of the above-described method for manufacturing an electronic component will not be described repeatedly, and the configuration of the plating film forming apparatus will be denoted by the same reference numerals and redundant description will be omitted. .

This embodiment is different from the above-described manufacturing method in that the metal plating film 8 once transferred to the resin film 20 is again applied to the surface of the ceramic green sheet 26 held on the resin film 25. The point is that it is transferred.

In this case, the ceramic green sheet 26 to which the metal printing film 8 has been transferred is wound up together with the resin film 26 by the storage section 29 and used in the subsequent steps. In the second embodiment, the same effects as in the first embodiment can be obtained.

Modification 2 of one manufacturing method

This embodiment is different from the above-described manufacturing method in that the metal plating film 8 deposited on the base 9 is attached to the main surface of the ceramic green sheet 26 held on the resin film 25. The point is that it is transcribed directly. That is, a resin film 25 made of a PET film or the like holding the ceramic green sheet 26 is sent out from the roll of the feeding section 22 and is pressed against the base 9 by the pressure roll 23 < Thus, the metal plating film 8 formed on the base 9 is transferred to the main surface of the ceramic green sheet 26 held on the resin film 25. The winding section 24 winds the resin finolem 25 to which the metal plating film 8 has been transferred by passing through the pressure roll 23.

In such an embodiment, exactly the same effects as in the previous embodiment can be obtained. Further, in this case, if the mask layer 7 of the base 9 used in the mask film forming apparatus is formed by DLC, GLC, or the like, the ceramic green sheet 26 hardly adheres to the surface of the mask layer 7. Therefore, stable transfer can be repeated.

Modification 3 of one manufacturing method

Next, another manufacturing method of the present invention will be described with reference to FIG.

In the conventional method, no film was formed on the portion of the resin film to which the metal plating film 8 was transferred, where the metal plating film 8 did not exist. For this reason, a step was formed between the portion where the metal plating film 8 was formed on the resin film and the portion where no metal plating film 8 was formed.

FIG. 7 shows a thin dielectric sheet for filling a step in a portion of the resin film 20 having the adhesive layer 21, on which the metal plating film 8 is transferred from the base 9, without the metal plating film 8. FIG. 4 is a cross-sectional view for explaining a method of forming 43.

In the middle of feeding the resin film 20, a pair of rollers 40, 41 for pressing the resin film 20 from the front and back are arranged. To the roller 40 in contact with the main surface of the resin film 20 on which the metal plating film 8 is formed, a resin film 42 on which a dielectric sheet 43 of substantially the same thickness as the metal plating film 8 is supported is sent. . The dielectric sheet 43 is preferably a ceramic green sheet.

The dielectric sheet 43 is pressed against one main surface of the resin film 20 by the pressure of the roller 40. At this time, by pressing the dielectric sheet 43 against both the portion where the metal plating film 8 exists and the portion where the metal plating film 8 does not exist, the cutting force of the edge of the metal plating film 8 is used, and the resin film 20 is pressed. The dielectric sheet 43 can be selectively adhered only to the portion of the one main surface where the metal plating film 8 does not exist.

In this way, a flat metal print film 8 in which the dielectric sheet 43 is embedded on the resin film 20 can be obtained. The flat where the dielectric sheet 43 is embedded The ceramic green sheet 26 is transferred onto the metallic make-up film 8 by using the ceramic green sheet transfer means described with reference to FIGS.

Even in such a method, the same effect as that of the above-described embodiment can be obtained, and a large gap is not formed between the metal plating film 8 and the ceramic green sheet 26. Therefore, even if this is peeled off from the resin film 20 and a plurality of sheets are laminated and then heat-treated to produce a laminated electronic component, electrical failure due to delamination and bending of the electrodes occurs. Can be effectively prevented, and a ceramic electronic component excellent in reliability and productivity can be obtained.

Modification of one manufacturing method 41

The present embodiment is different from the previous embodiments in that the metal plating film 8 is formed by being buried in the ceramic green sheet 26.

As shown in the enlarged view of FIG. 8, the manufacturing method is such that the metal plating film 8 is transferred onto the main surface of the resin film 20 from the nozzle 32 so that the metal plating film 8 is covered. The rally 31 is applied and dried using the heater 33 to obtain the ceramic green sheet 26 in which the metal plating film 8 is embedded.

By laminating a plurality of the obtained ceramic green sheets 26 in which the metal plating films 8 are embedded, a laminated body of the ceramic green sheets 26 is formed, and the laminated body is heat-treated in a heating furnace (not shown). Molded electronic components are manufactured.

In such an embodiment, in addition to obtaining exactly the same effects as those of the above-described embodiment, the ceramic green sheet 26 obtained as described above includes a portion where the metal plating film exists and a portion where the metal plating film exists. Since there is no large step between the non-existing portions, even when a plurality of such ceramic green sheets 26 are laminated to form a laminate, the deformation of the metal plating film embedded therein is not affected. It also has the advantage that it is effectively suppressed, and the occurrence of electrical faults and delamination is effectively prevented.

-Modified example of plating film forming apparatus

Next, another embodiment of the present invention will be described with reference to FIG.

The feature of this embodiment is that the printing tank 18 is a high-potential region 18 A that functions as an anode. And a low potential region 18 B functioning as a cathode.

That is, the cathode of the power supply 6 A is connected to the base 9, and the anode of the power supply 6 A is connected to the high potential region 18 A of the printing tank 18. Further, an anode of a power supply 6 B is connected to the base 9, and a cathode of the power supply 6 B is connected to the low potential region 18 B of the plating tank 18. The cathode of the power supply 6A and the anode of the power supply 6B are commonly connected.

After depositing the metal plating film 8 on the surface of the substrate 9 where the mask layer 7 does not exist, using the opposite potential of the power supply 6B, the surface portion of the metal plating film 8 once formed, particularly the metal plating film 8, The portion in contact with the substrate 9 and the mask layer 7 is redissolved in the plating solution 19. As a result, a minute gap is formed between the metal plating film 8 and the base 9 and the mask layer 7, and the releasability of the metal plating film 8 is improved, and the accuracy of the transfer to the material to be transferred is improved. Can be.

The above-described printing tank 18 electrically separates the high-potential region 18A from the low-potential region 18B by interposing an insulating member 16A made of, for example, vinyl chloride at the center thereof. . As the insulating member 16A, polytetrafluoroethylene or the like can be used in addition to the above-mentioned vinyl chloride. It is preferable to use a material having a specific resistance of 100 ΩΩπι or more in order to maintain sufficient insulation so that the metal plating film 8 can be appropriately deposited and redissolved in both regions. Further, the insulating member 16A is preferably a material having chemical resistance, particularly preferably a material having acid resistance. Further, between the plating tank 18 and the base 9, the plating liquid corresponding to each region is isolated from each other at a predetermined interval on the insulating member 16 and the surface of the base 9. Partition member 16B may be formed. By separating the plating liquids corresponding to the respective regions from each other by the partition member 16B, the electric fields corresponding to the two regions do not interfere with each other. It can be done appropriately.

The insulating member 16A and the partition member 16B may be integrally formed as the insulating partition material 16 using the same material. This insulating partition wall material 16 can also be used as a plating liquid supply port which is a part of a circulation device 15 described later. In this case, the insulating partition wall material 16 may be hollow so as to have an opening for supplying the plating liquid to the plating liquid 19 side in the plating tank 18. By providing a plurality of insulating partition members 16, the region of the plating tank 18 may be further finely divided. By doing so, the plurality of electric fields can be more appropriately controlled according to the purpose, and a desired metal plating film can be formed.

—Modification 2 of Plating Film Forming Apparatus— Next, a plating film forming apparatus according to another embodiment of the present invention will be described with reference to FIGS. 10 and 11.

This embodiment is different from the previous embodiments in that the surface of the base 9 used in the plating film forming apparatus has a plurality of protruding and removably supported at least in the surface layer portion with respect to the core of the base 9. It is a point divided into.

For example, as shown in FIG. 10, an insulating material 34 is formed so as to cover the entire surface side of the base 4, and a plurality of insulating partition members 35 are arranged at a predetermined interval on the insulating material 34. The block member 36 having the mask layer 7 formed on the conductive film 6 on the insulating material 34 and between the insulating partition wall materials 35 is fitted with an adhesive or the like so that the base material 4 is formed. Is composed.

In addition, conductive rollers 37 A and 37 B are provided at different positions in the makeup liquid 19. The conductive rollers 37A and 37B are connected to the high potential area 18A and the low potential area 18B of the plating tank 18 via power supply devices 6A and 6B, respectively. The block member 36 contacting the conductive roller 37 A has a positive high potential with respect to the plating tank 18, and the block member 36 contacting the conductive roller 37 B has a plating tank 18. Becomes a negative low potential.

Further, as shown in FIG. 11, the block member 36 is configured to include not only the surface layer of the base 4 but also the core, and the individual block members 36 are arranged from the center of the base 4 to the surface. An insulating partition wall material 35 that penetrates in a radial direction may be provided.

In the high-potential region 18A, after a metal plating film 8 is deposited on the surface of the base 9 where the mask layer 7 is not present, in the low-potential region 18B, once formed using the opposite potential. The surface portion of the metal plating film 8, particularly the contact portion between the metal plating film 8 and the substrate 9 and the mask layer 7 is redissolved in the plating solution 19. As a result, the metal plating film 8 pulled up from the plating solution 19 becomes the same between the metal plating film 8 and the base 9 and the mask layer 7. A minute gap is formed therebetween, and the releasability of the metal make-up film 8 is improved, so that the accuracy of transfer to the material to be transferred (resin film) can be improved.

Further, since the mask layer 7 and the like may be formed on the block member 36 having a small surface area, the mask layer 7 and the like can be formed on the block member 36 with simple equipment. In addition, when the mask layer 7 formed on the substrate surface is partially worn, the block member alone can be replaced, and there is an advantage that maintenance is excellent.

Note that the present invention is not limited to the above-described embodiment, and various changes, improvements, and the like can be made without departing from the gist of the present invention.

For example, in the above embodiment, the case of manufacturing a multilayer capacitor has been described as an example. However, the case of manufacturing electronic components other than the multilayer capacitor, for example, other electronic components such as inductors, filters, circuit boards, and the like. Needless to say, the present invention is also applicable to the above.

Claims

The scope of the claims

1. Prepare a substrate with a convex curved surface.

Depositing a metal plating film on the surface of the substrate,

A method for forming a metal plating film by obtaining the metal plating film by peeling the metal plating film from the substrate.

2. The substrate has a cylindrical surface,

The step of depositing a metal plating film on the surface of the substrate,

The metal according to claim 1, wherein a part of the surface of the base is immersed in a plating solution in a plating bath, and an electric field is applied between the base and the plating bath while rotating the base around an axis. A method for forming a plating film.

3. A mask layer is formed on the surface of the base to regulate the deposition area of the metal plating film, and the mask layer is made of diamond 'like' carbon (DLC) or graphite (like). 3. The method for forming a metal plating film according to claim 1 or claim 2, comprising (GLC).

4. The method for forming a metal plating film according to claim 1, wherein the metal plating film contains non-conductive fine particles.

5. Step A of depositing a metal plating film on the surface of the base;

A step B of peeling off the metal plating film from the base, and attaching the metal plating film and the dielectric sheet to each other;

The dielectric sheet on which the metal plating film is formed is subjected to a heat treatment at a temperature lower than the melting point of the metal forming the metal plating film, thereby providing a portion where the conductor layer is applied on the dielectric layer. A method for producing electronic components, including a process C for obtaining electronic components.

6. The step B includes a step of peeling the metal plating film from the base and transferring the film to a resin film, and a step of attaching a dielectric sheet onto the metal plating film transferred to the resin film. 6. The method for producing an electronic component according to claim 5, comprising:

7. The step: B is a step of peeling the metal plating film from the base and transferring it to a resin film, and a step of transferring the metal plating film transferred to the resin film again onto a dielectric sheet 6. The method for producing an electronic component according to claim 5, comprising:

8. The method of manufacturing an electronic component according to claim 5, wherein the step B includes a step of peeling the metal plating film from the base and directly transferring the resin film having the dielectric sheet formed on the dielectric sheet.

9. In the step B, a step of peeling the metal plating film from the base and transferring it to a resin film, and a step of applying a dielectric slurry so as to cover the metal plating film transferred to the resin film, 6. The method for producing an electronic component according to claim 5, comprising a step of heating and drying the resin film to which the dielectric slurry has adhered.

10. The method for producing an electronic component according to claim 5, wherein a peak temperature during the heat treatment in the step C is higher than a recrystallization temperature of a metal forming the metal plating film.

11. In the step B, after the metal plating film is peeled from the substrate and transferred to a resin film, the metal plating film is present on the surface of the resin film where the metal plating film is formed. A step of pressing a dielectric sheet having a thickness substantially equal to the metal plating film to both the region and the non-existing region to selectively attach the dielectric sheet to the resin film where the metal plating film does not exist. 6. The method for producing an electronic component according to claim 5, which includes:

12. The substrate has a columnar surface. In the step A, a part of the surface of the substrate is immersed in a plating solution in a plating tank, and the substrate is rotated around an axis. The method for producing an electronic component according to any one of claims 5 to 11, wherein an electric field is applied between the base and the plating tank.

13. A mask layer for regulating the deposition region of the metal plating film is formed on the surface of the base, and the mask layer is made of diamond-like-force-bon (DLC) or graphite-like- The method for producing an electronic component according to any one of claims 5 to 12, comprising carbon (GLC).

14. The plating liquid comprises non-conductive fine particles. In the step A, the non-conductive fine particles adhere to a metal component deposited on the surface of the substrate, thereby forming a metal plating film containing the non-conductive fine particles. 14. The method for producing an electronic component according to claim 5, wherein the electronic component is formed.

1 5. A plating tank into which the plating solution is injected,

It has a cylindrical surface, and is arranged such that a part of the surface is immersed in the plating liquid. A rotatable substrate,

Electrolysis applying means for applying an electric field between the substrate and the plating tank,

Forming a metal film on the surface of the substrate pulled up from the plating solution on the downstream side in the rotation direction of the substrate, and a transfer means for pressing a material to be transferred against the substrate;

16. The plating film formation according to claim 15, wherein the material to be transferred is a resin film, and further comprising a second transfer means for attaching a dielectric sheet on the metal plating film transferred to the resin film. apparatus.

17. The method according to claim 15, wherein the material to be transferred is a resin film, and further includes a third transfer means for transferring the metal plating film transferred to the resin film onto a dielectric sheet. Film forming equipment.

18. The plating film forming apparatus according to claim 15, wherein the material to be transferred is a resin film on which a dielectric sheet is formed.

19. The transfer-receiving material is a resin film, a slurry adhering means for adhering a dielectric slurry so as to cover the metal plating film transferred to the resin film, and a resin film adhering the dielectric slurry. 16. The plating film forming apparatus according to claim 15, further comprising: means for heating and drying.

20. The plating film according to any one of claims 15 to 19, wherein the surface of the base is divided into a plurality of blocks detachably supported by a core of the base. Forming equipment.

21. A first potential region in which a metal plating film is deposited on the surface of the substrate while being maintained at a more positive potential than the substrate in the plating tank; and a rotation direction downstream of the substrate from the first potential region. A second potential region located on the side of the metal plating film, the second potential region being held at a more negative potential than the substrate and re-dissolving the surface layer portion of the metal plating film deposited on the surface of the substrate in the plating solution. The plating film forming apparatus according to any one of claims 5 to 20.

22. The plating film forming apparatus according to claim 21, wherein an insulating member is interposed between the first potential region and the second potential region to electrically separate the two regions.