JP3786674B2 - Plating film forming device - Google Patents

Description

  The present invention relates to a plating film forming apparatus used for manufacturing capacitors, inductors, filters, circuit boards, and the like, which are configured by combining a dielectric layer and a conductor layer having a predetermined pattern.

  Conventionally, electronic parts such as capacitors, inductors, filters, circuit boards, and the like are formed using a dielectric material such as a ceramic material and a conductor material.

  As such a conventional electronic component, for example, a plurality of ceramic layers having a predetermined dielectric constant are laminated with a first internal electrode and a second internal electrode alternately interposed therebetween, A multilayer capacitor is well known in which a pair of external electrodes that are electrically connected to the first and second internal electrodes are provided on the side and main surfaces of the multilayer body.

  In such a multilayer capacitor, a predetermined voltage is applied between the first internal electrode and the second internal electrode, and a ceramic layer disposed between the first internal electrode and the second internal electrode is applied. It functions as a capacitor by forming a predetermined capacitance.

  The multilayer capacitor described above is manufactured through the following steps (for example, see Patent Document 1).

  First, an inorganic binder and an organic solvent are added to and mixed with a predetermined ceramic material powder to prepare a slurry-like inorganic composition, which is formed into a sheet with a predetermined thickness by using a conventionally known doctor blade method or the like. Thus, a ceramic green sheet is formed.

  Next, a conductor paste mainly composed of a metal such as nickel is printed and applied in a predetermined pattern on the main surface of the obtained ceramic green sheet by screen printing or the like known in the art. By stacking a plurality of these, a laminate of ceramic green sheets is formed.

  Subsequently, the laminate is fired at a high temperature to form a laminate of ceramic layers with internal electrodes interposed therebetween.

  Finally, a multilayer capacitor is manufactured by applying a conductive paste to the end face of the multilayer body by a conventionally known dipping method or the like and baking it to form external electrodes.

  Incidentally, in recent years, with the miniaturization of electronic devices, there has been a demand for miniaturization of electronic components, and in the case of the multilayer capacitor described above, various studies have been made to form individual ceramic layers and internal electrodes thinly. .

  For example, in the conventional multilayer capacitor described above, in order to reduce the thickness of the internal electrode, the average particle size of the metal powder contained in the conductive paste used for forming the internal electrode is set to, for example, about 0.3 μm. It is important to make it extremely small.

  However, when the particle size of the metal powder contained in the conductor paste is extremely small, the dispersibility of the metal powder is deteriorated due to the aggregation of the metal powders in the conductor paste. It has been difficult to obtain a conductor paste having characteristics suitable for printing and the like.

  Moreover, even if a conductor paste having characteristics suitable for screen printing can be obtained by adjusting various components contained in the conductor paste, it is applied thinly on a ceramic green sheet. When firing, there is a disadvantage that the continuity of the internal electrode is lost due to movement of the metal powder in the conductor paste during firing, and in the worst case, the internal electrode is divided.

  Therefore, in order to eliminate the above-described drawbacks, it has been studied to manufacture a multilayer capacitor using a thin metal plating film. In that case, a multilayer capacitor is manufactured by forming a multilayer body by laminating a plurality of ceramic green sheets coated with a metal plating film, and firing the multilayer body at a high temperature.

The metal plating film that serves as an internal electrode of such a multilayer capacitor is formed by forming a mask having an opening pattern corresponding to the internal electrode on a metal substrate and immersing the substrate in a plating tank, It is formed by depositing metal on the surface of the substrate located in the opening of the mask by a conventionally known electrolytic plating method. By pressing a ceramic green sheet or the like on the main surface of such a substrate and transferring the metal plating film formed in the opening of the mask onto one main surface of the ceramic green sheet, the metal plating film is placed on the ceramic green sheet. Adhered and formed.
JP 2000-243650 A

  However, the above-described manufacturing method using a metal plating film has a disadvantage that a large internal stress (tensile stress) is generated in the metal plating film when the metal plating film is deposited. Therefore, when the surface of the metal plate used for deposition of the metal plating film is flat, when the metal plating film is peeled off from the metal plate, the metal plating film is curved in a shape protruding in the direction opposite to the deposition direction. Attempts to cause so-called “warping” occur. For this reason, when the metal plating film is transferred to the ceramic green sheet, there is a disadvantage that deformation or cracking occurs in the ceramic green sheet or the metal plating film, or delamination occurs during firing.

  Further, in the conventional manufacturing method described above, when the laminated body made of the ceramic green sheet is fired, if the peak temperature is too high, the metal forming the metal plating film is melted, so that the internal electrode becomes fine. The function as a multilayer capacitor may be lost. On the other hand, if the firing temperature is too low, the adhesion between the ceramic layer obtained by firing the ceramic green sheet and the metal plating film (internal electrode) is lowered, and a defect that causes damage such as delamination is induced.

  The present invention has been devised in view of the problems as described above, and the purpose thereof is to form a plating film excellent in productivity, capable of obtaining a metal plating film having good releasability and no curvature. To provide an apparatus.

  The plating film forming apparatus of the present invention includes a plating tank into which a plating solution is injected, a rotatable base disposed so that a part of the surface is immersed in the plating liquid, and a space between the base and the plating tank. Electric field applying means for applying an electric field to the substrate, and transfer means arranged on the downstream side in the rotation direction of the substrate and pressing the material to be transferred against the metal plating film on the substrate surface pulled up from the plating solution. A first potential region held in the plating tank at a positive potential with respect to the base, and a negative potential with respect to the base located on the downstream side in the rotation direction of the base with respect to the first potential region. And a second potential region held in the first and second potential regions.

  It is preferable to interpose an insulating member for electrically separating both regions between the first potential region and the second potential region, and further, between the plating tank and the substrate, More preferably, a partition member is formed on the insulating member.

The method for producing a plating film of the present invention includes a step of depositing a metal plating film on the surface of a substrate having a columnar or cylindrical surface, a step of re-dissolving a surface layer portion of the deposited metal plating film,
And a step of peeling the metal plating film in which the surface layer portion is redissolved from the substrate.

  According to the plating film forming apparatus of the present invention, a plating tank into which a plating solution is injected, a rotatable base disposed so that a part of the surface is immersed in the plating liquid, the base and the plating tank An electric field applying means for applying an electric field between them, and a transfer means arranged on the downstream side in the rotation direction of the substrate and pressing the material to be transferred against the metal plating film on the surface of the substrate pulled up from the plating solution. A first potential region held in the plating tank at a positive potential with respect to the substrate; and a position downstream of the first potential region in the rotation direction of the substrate and more negative than the substrate. Since the second potential region maintained at the potential of 2 is provided, the metal plating film can be continuously formed by rotating the substrate around the axis, and the current between the substrate and the plating tank Metal plating film with almost uniform density It can be formed with a substantially constant thickness. In addition, by re-dissolving the surface portion (surface layer portion) of the metal plating film once formed, particularly the contact portion with the base in the plating solution, and generating a minute gap between the metal plating film and the base, The peelability of the metal plating film can be improved.

  In particular, from the viewpoint of more effectively achieving deposition and remelting of the metal plating film, an insulating member for electrically separating both regions is interposed between the first potential region and the second potential region. Further, it is more preferable to form a partition member on the insulating member between the plating tank and the substrate.

  Further, according to the method for producing a plated film of the present invention, the step of depositing the metal plated film on the surface of the substrate having a columnar or cylindrical surface, and the surface layer portion of the deposited metal plated film are re-dissolved. And a step of peeling the metal plating film whose surface layer portion has been re-dissolved from the substrate, so that the metal plating film can be continuously formed by rotating the substrate around the axis. The metal plating film can be formed with a substantially constant thickness by making the current density between the plating tank and the plating tank substantially uniform. In addition, by re-dissolving the surface portion (surface layer portion) of the metal plating film once formed, particularly the contact portion with the base in the plating solution, and generating a minute gap between the metal plating film and the base, The peelability of the metal plating film can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

―Multilayer capacitor―
FIG. 1 is a cross-sectional view showing a multilayer capacitor manufactured by the plating film forming apparatus of the present invention. The multilayer capacitor 1 shown in FIG. 1 includes a dielectric layer 4 stacked on a plurality of layers, an internal electrode 3 formed on each dielectric layer 4, an insulating layer 2 sandwiching the dielectric layer 4 from above and below, It is comprised with the electrode 5. FIG.

  The multilayer capacitor 1 is formed by forming internal electrodes 3 on a dielectric layer 4 having a predetermined dielectric constant and alternately laminating them to form a rectangular parallelepiped laminate. Insulating layers 2 made of the same material as the dielectric layer 4 are formed on the upper and lower surfaces of the laminate. Furthermore, external electrodes 5 electrically connected to the internal electrodes 3 are deposited and formed at both ends of the laminate. The outer shape of the multilayer capacitor 1 is formed with dimensions of, for example, a width of 1.2 mm, a length of 2 mm, and a height of 1.2 mm.

  The dielectric layer 4 is formed of a ceramic material or an organic material. When made of a ceramic material, it is formed of, for example, barium titanate, calcium titanate, strontium titanate or the like. In the case of an organic material, it is made of, for example, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PP (polypropylene), PPS (polyphenylene sulfide) or the like. The thickness of the dielectric layer 4 is set to, for example, 1.0 μm to 4.0 μm per layer, and the number of stacked layers is set to, for example, 30 to 600 layers. As the material of the insulating layer 2, a ceramic material or an organic material similar to that of the dielectric layer 4 is used.

  The internal electrode 3 interposed between the dielectric layers 4 is made of, for example, nickel, copper, silver, gold, platinum, palladium, chromium, an alloy of these metals, and the thickness thereof is, for example, 0.5 μm to 2.0 μm. Is set.

  The material and thickness of the dielectric layer 4, the number of stacked layers, the facing area of the internal electrode 3, and the like are appropriately determined depending on the desired capacitance of the stacked capacitor.

―Plating film forming device―
The multilayer capacitor described above is manufactured using the plating film forming apparatus shown in FIGS.

  FIG. 2 is a side view schematically showing the plating film forming apparatus of the present invention, FIG. 3 is a plan view of the base 9 used in the plating film forming apparatus as viewed from above (direction A in FIG. 2), and FIG. It is an expanded sectional side view which shows the structure of the base | substrate surface used for this plating film forming apparatus.

  The plating film forming apparatus is configured by disposing a substrate 9 rotatably in a plating tank 18 and disposing transfer means on the opposite side of the substrate 9 from the plating tank 18.

  Hereinafter, each component of the plating film forming apparatus will be described. Of the constituent elements described below, for example, the cleaning means, the cleaning liquid suction means, the plating liquid suction means, and the circulation device are not essential constituent elements in the plating film forming apparatus of the present invention but are positioned as additional constituent elements. Is.

= Substrate =
The substrate 9 functions as a cathode of the plating film forming apparatus. For example, it is formed of a metal having conductivity such as stainless steel, iron, aluminum, copper, nickel, titanium, tantalum, and molybdenum. A conductive film 6 (see FIG. 4) is formed on the entire surface of the substrate 9, and a mask layer 7 is formed on the surface of the conductive film 6 to expose the conductive film 6 in a predetermined pattern. Is done. Hereinafter, the surface of the substrate 9 and the conductive film 6 may be referred to as “surface of the substrate”.

  The surface of the base 9 is cylindrical, and the radius of curvature is set in a range of 50 mm to 2000 mm, for example, and the surface roughness is set to 0.5 μm or less in terms of the maximum height Ry, for example. The That is, Ry ≦ 0.5 μm.

As the conductive film 6 formed on the surface of the substrate 9, for example, a material having a specific resistance of 10 ⁻² Ωcm or less is used. In order to make the current density uniform during electrolytic plating, a material having a specific resistance of 10 ⁻³ Ωcm or less is preferable. Examples of the material for the conductive film 6 having a specific resistance of 10 ⁻³ Ωcm or less include titanium aluminum nitride, chromium nitride, titanium nitride, titanium nitride chromium, titanium carbonitride, titanium carbide, and conductive DLC (diamond-like carbon). Etc. can be used. Of the materials of the conductive film 6, in order to improve the peelability of the metal plating film 8, the conductive film 6 is made of titanium aluminum nitride, chromium nitride, titanium nitride, titanium nitride chromium, titanium carbonitride, or the like. Preferably formed. In particular, in order to improve durability, it is preferable to form the conductive film 6 with titanium nitride or the like. The conductive film 6 is formed on the surface of the substrate 9 by a conventionally well-known thin film forming method, for example, a sputtering method, an ion plating method, a chemical vapor deposition method (CVD) or the like.

The mask layer 7 formed on the surface of the conductive film 6 is for regulating the deposition region of the metal plating film 8. The mask layer 7 is preferably provided with sufficient electrical insulation. For example, the specific resistance may be set to 10 ⁴ Ω · cm or more. A material having a Vickers hardness Hv of, for example, 1000 or more and a friction coefficient μ of, for example, 0.3 or less is used. Examples of materials satisfying such various characteristics include amorphous DLC and GLC (graphite-like carbon).

  In this way, by forming the mask layer 7 for regulating the deposition region of the metal plating film 8 on the surface of the base 9, the base 9 is immersed in the plating solution 19 without going through complicated steps such as photoetching. Thus, the metal plating film 8 having a desired pattern can be easily obtained simply by applying an electric field between the plating tank 18 and the substrate 9 described later.

  The mask layer 7 is preferably formed to have the same thickness as the metal plating film 8 or slightly thicker than the metal plating film 8. This is to prevent the metal plating film 8 grown beyond the thickness of the mask layer 7 from spreading on the mask layer 7.

  Here, the angle α (see FIG. 4) of the corner formed between the side surface and the bottom surface of the mask layer 7 is preferably set to 90 degrees or less, for example, 90 degrees to 85 degrees. If the angle is set to 90 degrees or less in this way, the area of the lower surface of the metal plating film 8 in contact with the substrate 9 is smaller than the area of the upper surface thereof, so that the metal plating film 8 is transferred to the resin film 20 or the like. At this time, the outer peripheral portion of the metal plating film 8 is not easily caught by the mask layer 7, and the metal plating film 8 can be easily peeled off.

  The mask layer 7 is formed by depositing and forming DLC, GLC, etc. on the surface of the substrate 9 to a predetermined thickness by a thin film forming method such as a well-known sputtering method, ion plating method, CVD method or the like. It is formed by processing a pattern having a plurality of openings by employing a known photo-etching method or the like. The opening is a part corresponding to the deposition region of the metal plating film 8.

  DLC and GLC used as a material for the mask layer 7 have relatively high electrical resistance, so that plating does not deposit on the surface of the mask layer 7, the surface peelability is good, and the frictional resistance is also low. small. Therefore, when the metal plating film 8 is transferred to the resin film 20 or the like that is a transfer target, the transfer target is less likely to be damaged. Thus, by selecting the material of the mask layer 7, the durability of the substrate 9 is enhanced, and a high-quality metal plating film 8 can be obtained even when used repeatedly over a long period of time.

  The base body 9 as described above is rotatably supported by a rotating shaft 10 as shown in FIG. The rotating shaft 10 is connected to the main shaft of the electric motor, and the base 9 is rotated around the axis by transmitting the rotational movement of the electric motor. The rotating shaft 10 is connected to the power supply device 11 via a rotating brush, whereby a negative voltage is applied to the base 9. That is, the base 9 functions as a cathode of the plating film forming apparatus.

= Plating tank =
The plating tank 18 functions as an anode of the plating film forming apparatus, and at the same time, functions as a container for forming a plating bath by filling the plating solution 19 therein.

  Such an inner surface shape of the plating tank 18 and the surface of the substrate 9 are arranged substantially concentrically so that a constant interval is formed between them. The distance between the surface of the substrate 9 and the inner surface of the plating tank 18 is set to 2 mm to 50 mm, for example.

  The plating solution 19 flows between the base 9 and the plating tank 18 at a predetermined flow rate by a circulation device 15 or the like which will be described later. As the plating solution 19, when a nickel plating film is formed, a nickel sulfamate plating solution suitable for obtaining the metal plating film 8 with a low internal stress is preferably used. As such a nickel sulfamate plating solution, for example, an aqueous solution having a composition of nickel chloride 30 g / liter, nickel sulfamate 300 g / liter, boric acid 30 g / liter is used, and its pH value is, for example, 3.0. Set to ~ 4.2. In particular, in order to obtain the metal plating film 8 having a small internal stress, it is preferable to set the pH value to 3.5 to 4.0 and set the temperature of the plating solution 19 to 45 ° C. to 50 ° C.

  The plating solution 19 is preferably added with nonconductive fine particles 30 made of ceramic, resin, or the like.

  In addition, the plating solution 19 described above includes, if necessary, a pH buffer agent made of boric acid, nickel formate, nickel acetate, etc., a pit inhibitor made of sodium lauryl sulfate, etc., or an aromatic hydrocarbon such as benzene or naphthalene. Stress reducing agent consisting of chemicals with sulfonic acid, sulfonate, sulfonamide, sulphonimide, etc., curing agent consisting of aromatic sulphonic acid and its derivatives, butynediol, 2-butyne 1.4 diol, ethylene cyanide A smoothing agent composed of hydrin, formaldehyde, coumarin, pyrimidine, pyrazole, imidazole, and the like may be added as appropriate. Examples of the stress reducing agent include saccharin, p-toluenesulfonamide, benzenesulfonamide, benzenesulfonimide, sodium benzenedisulfonate, sodium benzenetrisulfonate, sodium naphthalene disulfonate, sodium naphthalene sulfonate and the like. .

  A conventionally well-known electrolytic plating method can be carried out by applying a potential between the plating tank 18 and the substrate 9 described above. That is, when a potential is applied between the base 9 serving as the cathode and the plating tank 18 serving as the anode, the metal plating film 8 is deposited on a region of the surface of the base 9 where the mask layer 7 does not exist.

  Further, since the plating solution 19 in the plating tank 18 always flows between the substrate 9 and the plating tank 18 in a predetermined direction as described above, the film quality of the metal plating film 8 is uniform. There is an advantage that can be

= Transfer means =
The transfer means includes a resin film transfer means for transferring the metal plating film 8 to one main surface of the resin film 20 and a ceramic for attaching one main surface of the ceramic green sheet 26 to the metal plating film 8 transferred to the resin film 20. And green sheet transfer means.

  The resin film transfer means is composed of a delivery part 22, a pressure roll 23, and a winding part 24. The delivery unit 22 is for connecting a roll shaft, around which the resin film 20 with the adhesive layer is wound, to an electric motor and rotating the shaft by a predetermined amount for delivery. The pressure roll 23 is for pressing the substrate 9 while rotating the resin film 20 with the adhesive layer. The winding unit 24 is composed of a roll for winding the resin film 20 with the adhesive layer onto which the metal plating film 8 has been transferred through the pressure roll 23 with a constant force.

  At least the surface portion of the pressure roll 23 is covered with an elastic material such as a urethane rubber coat, a neoprene rubber coat, or a natural rubber coat so that the resin film 20 can be uniformly pressed against the base 9. preferable. The pressure roll 23 may be a rotatable one that is not connected to the electric motor, or may be one that rotates by connecting the electric motor.

  The resin film 20 is made of, for example, a polyethylene terephthalate film (PET film) having a thickness of 20 μm to 50 μm, and an adhesive layer 21 having a thickness of 0.05 μm to 10 μm is formed on the main surface (the surface to which the metal plating film 8 is transferred). Used. The adhesive layer 21 is, for example, coated with an acrylic (solvent), acrylic emulsion (water), butyral, phenol, silicon, epoxy, or other adhesive on the main surface of a PET film or the like and dried. Obtained by. It is preferable to use one that has been adjusted so that the adhesive strength after drying is, for example, 0.1 N / cm.

  The adhesive layer 21 is preferably formed of a material that is reliably pyrolyzed at a relatively low temperature. Specifically, it is preferable to use an acrylic (solvent), acrylic emulsion (water), or butyral adhesive that thermally decomposes even when the metal plating film 8 adheres. Among them, it is particularly preferable to use an acrylic pressure-sensitive adhesive having good peelability. The pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 21 is set to, for example, 0.005 N / cm to 1.0 N / cm, and is set to 0.01 N / cm to 1.0 N / cm for good transferability. It is preferable to set it to 0.01 N / cm to 0.2 N / cm in order to further improve the releasability.

  Such a resin film 20 is sequentially supplied to the substrate 9 side by the delivery unit 22, and the side on which the adhesive layer 21 is formed is applied to the surface of the substrate 9 on which the metal plating film 8 is formed. Pressure is applied by the pressure roller 23 with a pressing force of 10N. As a result, the metal plating film 8 is transferred onto the resin film 20. Thereafter, the resin film 20 is wound up by the winding portion 24 at the same speed as the peripheral speed of the surface of the substrate 9.

  The ceramic green sheet transfer means includes a supply unit 28, a pressure roll 27, and a storage unit 29. The supply unit 28 connects a shaft of a roll around which the resin film 25 with the ceramic green sheet 26 is wound to an electric motor, and rotates and feeds the shaft by a predetermined amount. The pressure roll 27 brings the ceramic green sheet 26 into contact with the metal plating film 8 on the resin film 20 with a predetermined pressure. As a result, the ceramic green sheet 26 is transferred onto the metal plating film 8 of the resin film 20. The storage unit 29 winds the resin film 25 that has passed through the pressure roll 27 with a constant tension. The pressure roll 27 is made of the same material and structure as the pressure roller 23 described above.

= Cleaning means =
The cleaning means 12 is for cleaning the surface of the substrate 9 pulled up from the plating tank 18, and is disposed on the downstream side in the rotation direction of the substrate 9. Specifically, the plating solution 19 remaining on the surface of the metal plating film 8 and the mask layer 7 formed on the surface of the substrate 9 is washed away.

  The cleaning unit 12 includes a liquid supply unit 12b that newly supplies a cleaning liquid to the surfaces of the metal plating film 8 and the mask layer 7, a cleaning container 12a that holds the cleaning liquid that is supplied and contacts the surface of the base 9, and a cleaning liquid. A stirring means 12c for injecting a fluid such as air into the cleaning container 12a and a recovery means 12d for recovering the supplied cleaning liquid and the plating solution to be removed from the cleaning container 12a. Consists of.

  As a specific operation, a large amount of cleaning liquid is supplied into the cleaning container 12a from the liquid supply means 12b connected to the cleaning container 12a to the cleaning container 12a disposed on the surface of the base 9, and air is supplied from the stirring means 12c. By being sprayed, the plating solution remaining on the surfaces of the metal plating film 8 and the mask layer 7 inside the cleaning container 12a is mixed and cleaned with the supplied cleaning solution, and then the cleaning solution mixed with the plating solution is supplied from the cleaning container 12a. It is recovered to the outside by the recovery means 12d. The cleaning liquid mixed with the plating solution recovered by the recovery means 12d is separated after removing the impurities by passing through the filter 12e and separating the cleaning liquid and the plating solution by an ion exchanger (not shown). It can be configured such that the cleaning liquid is newly supplied into the cleaning container 12a by the liquid supply means 12b.

  The fluid injection port of the stirring means 12c is disposed in the gap between the cleaning container 12a and the substrate 9, and holds the remaining plating solution and cleaning liquid in the cleaning container 12a. The component of the plating solution 19 is changed when the leaked cleaning solution is mixed as an impurity in the plating tank 18 and the thickness of the metal plating film 8 is prevented from changing as a result. be able to. As a means for preventing the cleaning liquid from leaking between the surface of the substrate 9 and the cleaning container 12a, a sealing material made of rubber or the like and the same structure as the above-described liquid supply means 12b are closed up between the two. It can also be provided.

  Further, as the fluid ejected into the cleaning container 12a by the stirring means 12c, instead of the air described above, an inert gas that does not cause a chemical reaction with the cleaning liquid, the metal plating film and the substrate, or a liquid having the same composition as the cleaning liquid is used. be able to. When a liquid having the same composition as the cleaning liquid is used, the components of the cleaning liquid in the cleaning container 12a can be maintained constant, and the cleaning means 12 having a simple configuration that does not require a separate means for supplying the cleaning liquid is provided. On the other hand, if air or inert gas is used, corrosion of the metal plating film 8 and the substrate 9 can be prevented, and the cleaning liquid can be used for a long time without changing the cleaning liquid completely by preventing changes in the components of the cleaning liquid. You can continue.

  As the cleaning liquid, for example, water is used, and from the viewpoint of preventing a change in the performance of the metal plating film 8 as a conductive layer by transferring impurities contained in the water together with the metal plating film 8 to the transfer material. Water with high purity is preferably used, and the impurity ratio may be 1000 ppm or less. Moreover, it is preferable that the magnitude | size of an impurity is a thing of the magnitude | size below the thickness of the ceramic green sheet and the metal plating film 8 which are transfer materials. If impurities larger than this are present, the impurities are transferred together with the metal plating film 8, so that a hole may be formed in a ceramic green sheet or the like as a transfer material, which may cause an electrical failure. Instead of the above-mentioned water, alcohol, acetone, toluene or the like can be used as the cleaning liquid.

  In this way, the remaining plating solution together with the metal plating film 8 is removed by removing the plating solution remaining on the surfaces of the metal plating film 8 and the mask layer 7 using the cleaning means 12 and the plating solution suction means 14 described later. Transferred to the ceramic green sheet, scratching the ceramic green sheet, swelling and softening (change in dimensions) can prevent deterioration of product reliability due to deterioration of the internal electrode after firing. .

= Cleaning liquid suction means =
The cleaning liquid suction means 13 is arranged downstream of the cleaning means 12 in the rotation direction of the base 9, and after the plating liquid 19 is washed away by the cleaning means 12, it remains on the surfaces of the metal plating film 8 and the mask layer 7. This is for completely removing the cleaning liquid.

  The cleaning liquid suction means 13 is formed of a stainless steel plate or the like, and a plurality of suction holes are provided on the surface thereof, and remains on the surface of the substrate 9 by suctioning from these holes using a suction device. The cleaning liquid is removed. The surface portion of the cleaning liquid suction means 13 is attached with a fine hole formed, such as urethane sponge or artificial leather. The shape of the cleaning liquid suction means 13 may be any of a cylindrical shape, a columnar shape, and a flat plate shape.

  When the thicknesses of the mask layer 7 and the metal plating film 8 are different from each other, the cleaning liquid tends to remain on the stepped portions formed on the surfaces of the mask layer 7 and the metal plating film 8, and thus the cleaning liquid suction unit 13 follows the step shape. It is preferable to form the surface shape. Further, the shape of the cleaning liquid suction means 13 is not limited to the cylindrical shape or the columnar shape as described above, and may be a flat plate shape.

= Plating solution suction means =
The plating solution suction means 14 is disposed upstream of the cleaning means 12 in the rotation direction of the base 9 and removes the plating solution 19 remaining on the surface of the metal plating film 8 and the mask layer 7. is there.

  The plating solution suction means 14 is formed of a stainless steel plate or the like, and a plurality of holes are provided on the surface thereof in the same manner as the cleaning solution suction means 13 described above, and the plating solution 19 is sucked from these holes. It is like that. The surface portion of the plating solution suction unit 14 has the same structure as the cleaning solution suction unit 13. In addition, the shape of the plating solution suction means 14 may be any of a cylindrical shape, a columnar shape, and a flat plate shape.

  When the thicknesses of the mask layer 7 and the metal plating film 8 are different, the plating solution tends to remain on the stepped portions generated on the surfaces of the mask layer 7 and the metal plating film 8, so that the plating solution suction is performed along the step shape. It is preferable to form the surface shape of the means 14. Further, the shape of the plating solution suction means 14 is not limited to the cylindrical shape or the columnar shape as described above, and may be a flat plate shape.

= Circulating device =
The circulation device 15 is for circulating the plating solution 19 injected into the plating tank 18. A supply port 16 for the plating solution 19 is provided at a position in the center of the bottom surface of the plating tank 18 that faces the lowermost end portion of the substrate 9. The plating solution 19 is supplied from the supply port 16 into the plating tank 18. The plating solution 19 flows in the same direction as the rotation direction of the substrate 9 along the surface of the substrate 9 on the downstream side in the rotation direction of the substrate 9, and flows along the surface of the substrate 9 on the upstream side in the rotation direction of the substrate 9. It flows in the direction opposite to the rotation direction and overflows from both ends of the plating tank 18. The overflowing plating solution 19 is discharged to a circulation tank disposed outside the plating solution 19. Then, the plating solution 19 accumulated in the circulation tank is sucked out from a suction port 17 provided at the bottom thereof, and is again supplied into the plating tank 18 from the supply port 16 by a pump.

  In the process of circulating the plating solution 19 as described above, a filter may be provided to remove foreign matter, the pH value of the plating solution 19, the flow rate of the plating solution 19, the concentration of non-conductive fine particles, etc. You may make it adjust as needed.

-Manufacturing method of electronic components-
Next, a method for manufacturing a multilayer capacitor using the above-described plating film forming apparatus will be described step by step.

= Step 1 =
First, the metal plating film 8 is formed on the surface of the substrate 9 described above by electrolytic plating. Since the cross-sectional shape of the surface of the substrate 9 is circular, the cross-sectional shape of the metal plating film 8 is also formed as a convex curved surface having the same radius of curvature as the circle.

While the lower region of the substrate 9 is immersed in the nickel sulfamate plating solution 19 or the like injected into the plating tank 18, the current density is increased while rotating the substrate 9 around the rotating shaft 10 at a predetermined rotation speed. However, for example, a predetermined potential difference is applied between the plating tank 18 and 2 A / dm ^{2 to} 15 A / dm ² . As a result, the metal plating film 8 is formed in a convex curved surface along the circular surface of the substrate 9 except for the region where the mask layer 7 is formed.

  The metal plating film 8 thus formed is made of nickel, copper, silver, gold, platinum, palladium, chromium or the like or an alloy of these metals. Among these metal materials, nickel having excellent heat resistance is a multilayer capacitor. It is preferable as a material for forming the internal electrode 3.

  As described above, the substrate 9 is immersed in the plating solution 19 of the plating tank 18 while rotating around the axis, and an electric field is applied between the substrate 9 and the plating tank 18 to apply the metal plating film 8 on the surface of the substrate 9. Can be formed continuously, which improves the productivity of the multilayer capacitor. In addition, in this case, the current density between the substrate 9 and the plating tank 18 becomes substantially uniform, so that the metal plating film 8 can be formed with a substantially constant thickness.

  Further, in this case, if a large number of non-conductive fine particles 30 made of ceramic or resin are added to the plating solution 19, such non-conductive fine particles 30 are partly in contact with the substrate 9 to form a metal. It is embedded in the plating film 8. As a result, the metal plating film 8 including the nonconductive fine particles 30 is formed.

  The substrate 9 is cleaned by the plating solution suction unit 14, the cleaning unit 12 and the cleaning solution suction unit 13 after the metal plating film 8 formed on the surface of the substrate 9 is pulled up from the plating solution 19 by the rotation of the substrate 9. And dried.

= Step 2 =
Next, the metal plating film 8 obtained in step 1 is once transferred onto the resin film 20.

  Such a resin film 20 is sequentially supplied to the base 9 side by the delivery unit 22. The surface of the resin film 20 on which the adhesive layer 21 is formed is pressed against the surface of the substrate 9 on which the metal plating film 8 is formed by a pressing roller 23 with a pressing force of 10 N, for example. As a result, the metal plating film 8 is transferred onto the resin film 20. Thereafter, the resin film 20 is taken up by the take-up unit 24.

  At this time, since the metal plating film 8 is formed on the surface of the circular substrate 9 in the step 1 so that the cross section has a convex curved surface, when the metal plating film 8 is deposited on the resin film 20, Even if an internal stress (tensile stress) is generated in the metal plating film 8, if the obtained metal plating film 8 is peeled off from the base 9 and deposited on the resin film 20, the convex curved metal plating film 8 becomes the resin film 20. Deformation in the direction of flattening above. Therefore, the metal plating film 8 is formed on the flat resin film 20 in a flat state without causing distortion.

  Further, if a large number of non-conductive fine particles 30 made of ceramic or resin are added to the metal plating film 8 on the base 9 as described above, these non-conductive fine particles 30 have poor adhesion to the base 9. The metal plating film 8 can be peeled off from the substrate 9 relatively easily.

  In order to improve the releasability of the metal plating film 8, the non-conductive fine particles 30 are distributed so that many non-conductive fine particles 30 are arranged on the plating deposition surface (site in contact with the conductive film 6). It is preferable. In particular, the exposed area of the nonconductive fine particles 30 exposed on the surface of the metal plating film 8 should be 0.01% to 40% of the total area of the metal plating film 8. This is preferable because the plating film can be easily peeled off from the substrate and deformation of the metal plating film can be prevented in advance. If this value is less than 0.01%, the deposition rate of the metal component in the metal plating film 8 is increased, and it becomes difficult to sufficiently reduce the adhesion with the substrate 9, and the metal plating from the substrate surface becomes difficult. When the film is peeled off, the metal plating film may be deformed. On the other hand, if it exceeds 40%, the mechanical strength of the metal plating film itself decreases due to a decrease in the metal component in the metal plating film 8, so that when the metal plating film is peeled off from the substrate surface, the metal plating film is cracked. May occur.

  When a ceramic material is used as such non-conductive fine particles 30, the same material as the ceramic material of the ceramic green sheet 26 used as the dielectric sheet is suitable.

  On the other hand, when resin fine particles are used as the non-conductive fine particles 30, the same material as the organic binder contained in the ceramic green sheet 26 is preferable.

  As the size of the nonconductive fine particles 30, it is preferable to use those having an average particle size smaller than the thickness of the metal plating film 8. By doing so, it is possible to effectively prevent the metal plating film 8 from being deformed when the metal plating film 8 is peeled off from the substrate 9.

  Further, as such non-conductive fine particles 30, non-conductive fine particles 30 made of a ceramic material and non-conductive fine particles 30 made of a resin material may be mixed and used.

= Step 3 =
Next, the ceramic green sheet 26 is adhered onto the metal plating film 8 by further pressing a ceramic green sheet 26 as a dielectric sheet onto the resin film 20 to which the metal plating film 8 has been transferred.

  The ceramic green sheet 26 is wound around a roll of the supply unit 28 in a state where the ceramic green sheet 26 is supported on a resin film 25 made of, for example, a PET film having a thickness of 12 μm to 100 μm. When the ceramic green sheet 26 is supplied to the joining position with the resin film 20, both the resin films 20 and 25 are overlapped and contact the metal plating film 8 on the resin film 20. While this portion is heated at a temperature of about 70 ° C. by a heater provided in the pressure roller 27, the resin film 25 is pressed by the pressure roller 27 toward the resin film 20 with a pressing force of about 100N. As a result, the ceramic green sheet 26 is attached to the metal plating film 8. Thereafter, the resin film 25 from which the ceramic green sheet 26 has been peeled off is wound up by the storage unit 29.

  As described above, once the metal plating film 8 is transferred onto the resin film 20 and then the ceramic green sheet 26 is stacked and adhered thereon, the surface of the substrate on which the ceramic green sheet 26 is formed of a hard material. Since the ceramic green sheet 26 is not in direct contact with the mask layer 7, the ceramic green sheet 26 is satisfactorily adhered onto the metal plating film 8 without being damaged by the contact with the mask layer 7. Can do.

  Further, since the metal plating film 8 is deformed in the flattening direction as described above when it is peeled off from the base 9, the main surface of the ceramic green sheet 26 is transferred to the metal plating film 8. In addition, the ceramic green sheet 26 and the metal plating film 8 are effectively prevented from being deformed or cracked. Therefore, the productivity of the multilayer capacitor 1 can be improved.

  The ceramic green sheet 26 supported on the resin film 25 is formed to have a thickness of, for example, 1 μm to 20 μm, and a predetermined ceramic slurry obtained by adding and mixing an organic solvent, an organic binder, or the like to the ceramic material powder. It is obtained by coating the main surface of the resin film 25 by a conventionally known coating method or printing method so that the thickness after firing is about 2 μm, and then drying it.

  As the resin film 25, a PET film having a thickness of 38 μm is used. A ceramic slurry is applied and dried on one main surface of such a resin film 25 so that the thickness after firing becomes 2 μm, for example, to prepare a resin film 25 with a ceramic green sheet 26. Next, the ceramic green sheet 26 of the resin film 25 is brought into contact with the metal plating film 8 on the resin film 20, and the contact portion is set to 100 N by a pressure roller 27 having a radius of 100 mm and a length of 250 mm. The ceramic green sheet 26 is pressed against the resin film 20 with the metal plating film 8 by being sandwiched under a pressure condition of 70 ° C. Thereafter, the ceramic green sheet 26 is peeled off from the resin film 25.

= Step 4 =
Next, a plurality of ceramic green sheets 26 with the metal plating film 8 obtained in the above-described step 3 are prepared, for example, temporarily pressure-bonded at a pressure of 0.9 MPa while being heated at a temperature of 60 ° C. A laminate is formed by pressure bonding at a temperature of 70 ° C. and a pressure of 50 MPa by a known hydrostatic pressure press or the like.

= Step 5 =
Finally, the laminate obtained in step 4 is cut into a predetermined shape, and the obtained pieces are fired at a high temperature.

  The laminate is fired so that the temperature is lower than the melting point of the metal forming the metal plating film 8 and higher than the recrystallization temperature of the metal at least at one point during firing. As a result, the ceramic green sheet 26 becomes the dielectric layer 4 of the multilayer capacitor, and the metal plating film 8 becomes the internal electrode 3.

  Here, metal recrystallization is a phenomenon in which when a processed metal material is heated, the metal is suddenly softened at a certain temperature and stabilized so as to reduce internal strain. The temperature at which this recrystallization starts is called the recrystallization temperature. For example, in the case of nickel, the recrystallization temperature is 530 ° C. to 660 ° C., the melting point is 1458 ° C., in the case of copper, the recrystallization temperature is 200 ° C. to 250 ° C., the melting point is 1083 ° C., and in the case of gold, the recrystallization temperature is about The melting point is 200 ° C. and 1060 ° C. Therefore, when the metal plating film 8 is made of nickel, the laminate is fired at a temperature of 1300 ° C., for example.

  By firing the metal plating film 8 at a temperature lower than the melting point of the metal that forms the metal plating film 8 in this way, the disadvantage that the metal plating film 8 melts and the metal plating film 8 is divided during firing is ensured. Therefore, the internal electrode 3 excellent in continuity can be formed.

  In this case, the peak temperature when firing the laminate is set to be higher than the recrystallization temperature of the metal forming the metal plating film 8, so that the metal forming the metal plating film 8 during firing is formed. As the recrystallization progresses, the metal softens moderately, and the ceramic particles in the ceramic green sheet 26 enter the surface of the metal plating film 8. This improves the adhesion between the metal plating film 8 and the ceramic green sheet 26, and as a result, a multilayer capacitor with few structural defects can be obtained.

  In addition, in this case, since the non-conductive fine particles 30 are partially embedded in the metal plating film 8, when a ceramic material is used as the non-conductive fine particles 30, the non-conductive fine particles 30 are formed on the ceramic green sheet. 26 are fired at the same time, and are sintered and integrated with the ceramic components contained in the ceramic green sheet 26. As a result, the adhesion between the metal plating film 8 and the ceramic green sheet 26 is improved. Further, when a resin material is used as the non-conductive fine particles 30, the non-conductive fine particles 30 are burned off when the ceramic green sheet 26 is fired to form voids, and the ceramic components in the ceramic green sheets 26 are formed in the voids. In this case, the adhesion between the metal plating film 8 and the ceramic green sheet 26 is improved.

= Step 6 =
Finally, a conductive paste for an external electrode is applied to both ends of the laminate by a conventionally known dipping method or the like, and after firing this, an external electrode 5 is formed by plating the surface thereof, Thereby, the multilayer capacitor 1 as a product is completed.

-Modification 1 of manufacturing method-
Next, another embodiment of the electronic component manufacturing method will be described with reference to FIG. It should be noted that redundant description of the same steps as those of the electronic component manufacturing method described above will be omitted, and the same reference numerals will be given to the configuration of the plating film forming apparatus, and redundant description will be omitted. .

  The present embodiment is different from the manufacturing method described above in that the metal plating film 8 once transferred to the resin film 20 is transferred again to the surface of the ceramic green sheet 26 held on the resin film 25. This is the point.

  In this case, the ceramic green sheet 26 onto which the metal plating film 8 has been transferred is wound up together with the resin film 26 by the storage portion 29 and used in the subsequent processes.

  Also in the second embodiment, the same effect as that of the first embodiment described above can be obtained.

-Modification 2 of manufacturing method-
Next, another embodiment of the electronic component manufacturing method will be described with reference to FIG. It should be noted that redundant description of the same steps as those of the electronic component manufacturing method described above will be omitted, and the same reference numerals will be given to the configuration of the plating film forming apparatus, and redundant description will be omitted. .

  The present embodiment is different from the manufacturing method described above in that the metal plating film 8 deposited on the substrate 9 is directly transferred to the main surface of the ceramic green sheet 26 held on the resin film 25. This is the point. That is, the resin film 25 made of a PET film or the like holding the ceramic green sheet 26 is sent out from the roll of the sending-out part 22 and is pressed against the base 9 by the pressure roll 23. Thereby, the metal plating film 8 formed on the substrate 9 is transferred to the main surface of the ceramic green sheet 26 held on the resin film 25. The winding unit 24 winds up the resin film 25 on which the metal plating film 8 has been transferred through the pressure roll 23.

  In such an embodiment, the same effect as in the previous embodiment can be obtained.

  In this case, if the mask layer 7 of the substrate 9 used in the plating film forming apparatus is formed by DLC, GLC or the like, the ceramic green sheet 26 hardly adheres to the surface of the mask layer 7, so that it is stable. Transfer can be repeated.

-Modification of manufacturing method 3-
Next, another embodiment of the electronic component manufacturing method will be described with reference to FIG.

  In the conventional methods, no film is formed on the portion of the resin film to which the metal plating film 8 is transferred, where the metal plating film 8 does not exist. For this reason, the level | step difference has arisen in the part in which the metal plating film 8 is formed on the resin film, and the part in which nothing is formed.

  FIG. 7 shows that a thin dielectric sheet 43 for filling a step is formed in a portion where the metal plating film 8 does not exist with respect to the resin film 20 having the adhesive layer 21 to which the metal plating film 8 has been transferred from the substrate 9. It is sectional drawing for demonstrating the method to do.

  In the middle of feeding the resin film 20, a pair of rollers 40 and 41 for pressing the resin film 20 from the front and back are arranged. A resin film 42 on which a dielectric sheet 43 having a thickness substantially equal to that of the metal plating film 8 is supported is sent to the roller 40 in contact with the main surface of the resin film 20 on which the metal plating film 8 is formed. The dielectric sheet 43 is preferably a ceramic green sheet.

  The dielectric sheet 43 is pressed against one main surface of the resin film 20 by the pressure of the roller 40. At this time, the dielectric sheet 43 is pressed against both the portion where the metal plating film 8 is present and the portion where the metal plating film 8 is not present, so that the cutting force of the edge of the metal plating film 8 is utilized to obtain The dielectric sheet 43 can be selectively attached only to a portion of the main surface where the metal plating film 8 does not exist.

  Thus, the flat metal plating film 8 in which the dielectric sheet 43 is embedded on the resin film 20 can be obtained. The ceramic green sheet 26 is transferred onto the flat metal plating film 8 in which the dielectric sheet 43 is embedded, using the ceramic green sheet transfer means described with reference to FIGS.

  In such a method, in addition to obtaining the same effect as that of the above-described embodiment, there is no large gap between the metal plating film 8 and the ceramic green sheet 26. Therefore, by peeling this from the resin film 20 and laminating a plurality of sheets, it is effective to cause electrical defects due to delamination and electrode bending even if the laminated type electronic component is manufactured by heat treatment. Thus, a ceramic electronic component having excellent reliability and productivity can be obtained.

-Modification of the manufacturing method 4-
Next, another embodiment of the electronic component manufacturing method will be described with reference to FIG.

  This embodiment is different from the previous embodiments in that the metal plating film 8 is formed by being embedded in the ceramic green sheet 26.

  In this manufacturing method, as shown in the enlarged view of FIG. 8, a ceramic slurry 31 is applied from the nozzle 32 to the main surface of the resin film 20 to which the metal plating film 8 has been transferred so as to cover the metal plating film 8. This is dried using a heater 33 to obtain a ceramic green sheet 26 in which the metal plating film 8 is embedded.

  A plurality of obtained ceramic green sheets 26 embedded with the metal plating film 8 are laminated to form a laminated body of ceramic green sheets 26, which are heat-treated in a heating furnace (not shown) to obtain laminated type electrons. Parts are produced.

  In such an embodiment, in addition to obtaining the same effect as the above-described embodiment, the ceramic green sheet 26 obtained as described above does not have a portion where a metal plating film is present. Since there is no large step between the portion, even if a plurality of ceramic green sheets 26 like this are laminated to form a laminate, deformation of the metal plating film embedded therein is effectively suppressed. There is also an advantage that the occurrence of electrical failure and delamination is effectively prevented.

-Modification 1 of plating film forming apparatus-
Next, a plating film forming apparatus according to another embodiment of the present invention will be described with reference to FIG.

  The feature of this embodiment is that the plating tank 18 is partitioned into a high potential region 18A that functions as an anode and a low potential region 18B that functions as a cathode.

  That is, the cathode of the power source 6A is connected to the base 9, and the anode of the power source 6A is connected to the high potential region 18A of the plating tank 18. Further, the anode of the power source 6B is connected to the base 9, and the cathode of the power source 6B is connected to the low potential region 18B of the plating tank 18. The cathode of the power source 6A and the anode of the power source 6B are connected in common.

  After the metal plating film 8 is deposited on the surface of the substrate 9 where the mask layer 7 does not exist, the surface portion of the metal plating film 8 once formed, particularly the metal plating film 8 and the substrate, using the reverse potential of the power source 6B. 9 and the contact portion with the mask layer 7 are redissolved in the plating solution 19. As a result, a minute gap is generated between the metal plating film 8 and the substrate 9 and the mask layer 7, thereby improving the peelability of the metal plating film 8 and improving the transfer accuracy to the transfer material. .

  The plating tank 18 described above electrically separates the high potential region 18A and the low potential region 18B by interposing an insulating member 16A made of, for example, vinyl chloride at the center thereof. As the insulating member 16A, polytetrafluoroethylene or the like can be used in addition to the above-described vinyl chloride. It is preferable to use a material having a specific resistance value of 1000 Ωm or more in order to maintain sufficient insulation so that the metal plating film 8 can be appropriately deposited and redissolved in both regions. Further, the insulating member 16A is preferably a material having chemical resistance, and particularly preferably has an acid resistance property.

  Further, a partition for separating the plating solutions corresponding to each region from each other with a predetermined gap between the plating tank 18 and the base 9 on the insulating member 16A and the surface of the base 9 The member 16B may be formed. By separating the plating solutions corresponding to each region from each other by the partition member 16B, the electric fields corresponding to both regions do not interfere with each other. It can be carried out.

  The insulating member 16A and the partition member 16B may be integrally formed as the insulating partition material 16 with the same material. The insulating partition material 16 can also be used as a plating solution supply port that is a part of the circulation device 15 described later. In this case, the insulating partition material 16 may be hollow and have an opening for supplying the plating solution to the plating solution 19 side in the plating tank 18.

  In addition, you may make it divide | segment the area | region of the plating tank 18 further finely by providing the insulating partition member 16 with two or more. By doing so, a plurality of electric fields can be controlled more appropriately according to the purpose, and a desired metal plating film can be formed.

-Modification 2 of plating film forming apparatus
Next, a plating film forming apparatus according to another embodiment of the present invention will be described with reference to FIGS.

  This embodiment is different from the previous embodiments in that a plurality of blocks in which the surface of the base 9 used in the plating film forming apparatus is detachably supported from the core part of the base 9 at least in the surface layer portion. It is a point that is divided into two.

  For example, as shown in FIG. 10, an insulating material 34 is formed so as to cover the entire surface side of the substrate 9, and a plurality of insulating partition members 35 are arranged on the insulating material 34 at predetermined intervals, and the insulating material 34 is provided. The base 9 is configured such that a block member 36 in which the mask layer 7 is formed on the conductive film 6 is fitted between the insulating partition members 35 using an adhesive or the like.

  Conductive rollers 37A and 37B are provided at different positions in the plating solution 19. The conductive rollers 37A and 37B are connected to the high potential region 18A and the low potential region 18B of the plating tank 18 via the power supply devices 6A and 6B, respectively. The block member 36 in contact with the conductive roller 37A has a positive high potential with respect to the plating tank 18, and the block member 36 in contact with the conductive roller 37B has a negative low potential with respect to the plating tank 18.

  Further, as shown in FIG. 11, not only the surface layer portion of the base 9 but also the core portion is configured as a block member 36, and each block member 36 penetrates radially from the center of the base 9 toward the surface. An insulating partition material 35 may be interposed.

  After depositing the metal plating film 8 on the surface of the substrate 9 where the mask layer 7 does not exist in the high potential region 18A, the surface of the metal plating film 8 once formed using the reverse potential in the low potential region 18B. The portion, particularly the contact portion between the metal plating film 8 and the substrate 9 and the mask layer 7 is redissolved in the plating solution 19. Thereby, in the metal plating film 8 pulled up from the plating solution 19, a minute gap is generated between the metal plating film 8, the substrate 9 and the mask layer 7, and the peelability of the metal plating film 8 is improved, so that the transferred object is transferred. Transfer accuracy to the material (resin film) can be increased.

  Moreover, since the mask layer 7 etc. should just be formed with respect to the block member 36 which has a small surface area, it becomes possible to produce the mask layer 7 etc. in the block member 36 with simple equipment. Further, when the mask layer 7 formed on the substrate surface is partially worn, it is possible to replace only the block member, and there is an advantage that the maintainability is excellent.

  In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

  For example, in the above-described embodiment, the case where a multilayer capacitor is manufactured has been described as an example. It goes without saying that the invention is applicable.

It is sectional drawing which shows the multilayer capacitor manufactured with the plating film forming apparatus of this invention. (A) is a side view which shows typically the plating film forming apparatus which concerns on one Embodiment of this invention, (b) is an expanded sectional side view which shows the structure of the washing | cleaning means of (a). It is the top view which looked at the base | substrate 9 used for the plating film forming apparatus of FIG. 2 from the top (A direction of FIG. 2). It is an expanded sectional side view which shows the structure of the base surface used for the plating film forming apparatus of FIG. It is a side view which shows typically the plating film forming apparatus which concerns on other embodiment of this invention. It is a side view which shows typically the plating film forming apparatus which concerns on other embodiment of this invention. It is a side view which shows typically the plating film forming apparatus which concerns on other embodiment of this invention. It is a side view which shows typically the plating film forming apparatus which concerns on other embodiment of this invention. It is a side view which shows typically the plating film forming apparatus which concerns on other embodiment of this invention. It is a side view which shows typically the plating film forming apparatus which concerns on other embodiment of this invention. It is a side view which shows typically the plating film forming apparatus which concerns on other embodiment of this invention.

Explanation of symbols

1 ... Multilayer capacitors (electronic components)
2 ... Insulating layer 3 ... Internal electrode (conductor layer)
4. Ceramic layer (dielectric layer)
5 ... External electrode 6 ... Conductive film 7 ... Mask layer 8 ... Metal plating film 9 ... Base body 10 / Rotating shaft 11 / Power supply device 12 / Cleaning means 12a / Cleaning container 12b · Liquid supply means 12c · Agitation means 12d · Recovery means 12e · Filter filter 13 · Cleaning liquid suction means 14 · Plating liquid suction means 15 · Circulation device 16 · · Supply port (insulating partition material)
16A, insulating member 16B, partition member 17, suction port 18, plating tank 18A, high potential region 18B, low potential region 19, plating solution 20, resin film 21, adhesive layer 22, delivery portion 23・ Pressure roll 24 ・ ・ Winding part 25 ・ ・ Resin film 26 ・ ・ Ceramic green sheet (dielectric sheet)
27..Pressure roll 28..Supply unit 29..Storage unit 30..Non-conductive fine particles 31..Ceramic slurry (dielectric slurry)
31 ', dielectric sheet 32, coating means 33, drying means 34, insulating material 35, insulating partition material 36, block member 37A, conductive roller 37B, conductive roller

Claims (3)

A plating tank into which a plating solution is injected;
A rotatable substrate disposed such that a portion of the surface is immersed in the plating solution;
An electric field applying means for applying an electric field between the substrate and the plating tank;
A plating film forming apparatus having transfer means arranged on the downstream side in the rotation direction of the substrate and pressing a transfer material against a metal plating film on the surface of the substrate pulled up from the plating solution,
In the plating tank, a first potential region held at a positive potential with respect to the base, and a position downstream of the first potential region in the rotation direction of the base and a negative potential with respect to the base. A plating film forming apparatus comprising: a held second potential region.   2. The plating film forming apparatus according to claim 1, wherein an insulating member for electrically separating both the regions is interposed between the first potential region and the second potential region.   The plating film forming apparatus according to claim 2, wherein a partition wall member is formed on the insulating member between the plating tank and the substrate.

Images