WO2004108982A3 - Adaptable processing element for a processing system and a method of making the same - Google Patents

Adaptable processing element for a processing system and a method of making the same Download PDF

Info

Publication number
WO2004108982A3
WO2004108982A3 PCT/US2004/013793 US2004013793W WO2004108982A3 WO 2004108982 A3 WO2004108982 A3 WO 2004108982A3 US 2004013793 W US2004013793 W US 2004013793W WO 2004108982 A3 WO2004108982 A3 WO 2004108982A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing
processing element
detachable component
making
adaptable
Prior art date
Application number
PCT/US2004/013793
Other languages
French (fr)
Other versions
WO2004108982A2 (en
Inventor
John Lawson
Rodger Eckerson
Michael Landis
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Arizona Inc
John Lawson
Rodger Eckerson
Michael Landis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/454,381 external-priority patent/US20040245089A1/en
Priority claimed from US10/454,747 external-priority patent/US7306707B2/en
Application filed by Tokyo Electron Ltd, Tokyo Electron Arizona Inc, John Lawson, Rodger Eckerson, Michael Landis filed Critical Tokyo Electron Ltd
Priority to JP2006514262A priority Critical patent/JP2007525820A/en
Publication of WO2004108982A2 publication Critical patent/WO2004108982A2/en
Publication of WO2004108982A3 publication Critical patent/WO2004108982A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

An adaptable processing element (50,150-156) having multiple configurations is provided for use in a processing system. The processing element comprises a primary component (182, 200, 202, 230) and at least one detachable component (184, 208, 232). The detachable component can be retained for one configuration and removed for another configuration. The detachable component may include a punch-out or knock-out (210, 214, 216) located, for example on its right-hand side or its left-hand side in order to permit access of a gas supply line to a processing chamber for either a right-hand orientation or a left-hand orientation, respectively. Additionally, for example, the detachable component can be retained or removed to permit flexible use with different size processing chambers. A method of making the processing element having these components is also provided. The method may provide a roughening of one or more exposed surfaces on the processing element to improve the adhesion of materials on these surfaces during processing. The roughening procedure may comprise belt sanding the one or more exposed surfaces to produce surface roughness. The roughness may, for example, be about or in excess of Ra=250 mil.
PCT/US2004/013793 2003-06-04 2004-05-03 Adaptable processing element for a processing system and a method of making the same WO2004108982A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006514262A JP2007525820A (en) 2003-06-04 2004-05-03 Applicable processing member for processing system and method of manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/454,381 US20040245089A1 (en) 2003-06-04 2003-06-04 Method of surface treating a processing element in a processing system
US10/454,747 US7306707B2 (en) 2003-06-04 2003-06-04 Adaptable processing element for a processing system and a method of making the same
US10/454,381 2003-06-04
US10/454,747 2003-06-04

Publications (2)

Publication Number Publication Date
WO2004108982A2 WO2004108982A2 (en) 2004-12-16
WO2004108982A3 true WO2004108982A3 (en) 2005-09-29

Family

ID=33513849

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/013793 WO2004108982A2 (en) 2003-06-04 2004-05-03 Adaptable processing element for a processing system and a method of making the same

Country Status (3)

Country Link
JP (1) JP2007525820A (en)
KR (1) KR20060039862A (en)
WO (1) WO2004108982A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
JP2018181966A (en) * 2017-04-06 2018-11-15 サムコ株式会社 Preventing plate and plasma processing apparatus having the same
JP7333780B2 (en) * 2018-01-08 2023-08-25 ラム リサーチ コーポレーション Components and processes for managing plasma processing byproducts

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4915564A (en) * 1986-04-04 1990-04-10 Materials Research Corporation Method and apparatus for handling and processing wafer-like materials
US4964617A (en) * 1989-09-22 1990-10-23 Lawrence W Edward Removable extension for a hydraulic floor jack
US5630917A (en) * 1993-05-17 1997-05-20 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4915564A (en) * 1986-04-04 1990-04-10 Materials Research Corporation Method and apparatus for handling and processing wafer-like materials
US4964617A (en) * 1989-09-22 1990-10-23 Lawrence W Edward Removable extension for a hydraulic floor jack
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US5630917A (en) * 1993-05-17 1997-05-20 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator

Also Published As

Publication number Publication date
WO2004108982A2 (en) 2004-12-16
KR20060039862A (en) 2006-05-09
JP2007525820A (en) 2007-09-06

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