WO2004108982A2 - Adaptable processing element for a processing system and a method of making the same - Google Patents

Abstract

An adaptable processing element (50,150-156) having multiple configurations is provided for use in a processing system. The processing element comprises a primary component (182, 200, 202, 230) and at least one detachable component (184, 208, 232). The detachable component can be retained for one configuration and removed for another configuration. The detachable component may include a punch-out or knock-out (210, 214, 216) located, for example on its right-hand side or its left-hand side in order to permit access of a gas supply line to a processing chamber for either a right-hand orientation or a left-hand orientation, respectively. Additionally, for example, the detachable component can be retained or removed to permit flexible use with different size processing chambers. A method of making the processing element having these components is also provided. The method may provide a roughening of one or more exposed surfaces on the processing element to improve the adhesion of materials on these surfaces during processing. The roughening procedure may comprise belt sanding the one or more exposed surfaces to produce surface roughness. The roughness may, for example, be about or in excess of Ra=250 mil.

Description

ADAPTABLE PROCESSING ELEMENT

FOR A PROCESSING SYSTEM

AND A METHOD OF MAKING THE SAME

[0001] This application is a continuation of United States patent applications Senal Nos 10/454,381 and 10/454,747 both filed June 4, 2003, hereby incorporated herein by refeience

[0002] This application is related to co-pending United States patent application Serial No 10/454,798 entitled "Method of Fabricating a Shield", heieby lncorpoiated herein by reference Field of the Invention

[0003] The piesent invention telates to piocessing elements for vacuum piocessing machines, such as semiconductoi wafer processing machines, and particularly processing elements such as protective chamber shields that protect the inside sui faces of the processing chambeis of such machines from deposits duiing processing The invention more paittcularly lelates to the surface treating of such piocessing elements for improved film adhesion dining piocessing Background of the Invention

[0004] The fabrication of integiated citcuits (ICs) in the semiconductor mdustiy typically employs plasma to create and assist suiface chemistiy withm a plasma reactor necessary to lemove mateiial from and deposit material onto a substt ate Fot example, plasma can be utilized with physical vapot deposition (PVD) to sputtei material from a taiget and deposit the sputtered adatom onto the substrate, with chemical vapor deposition (CVD) to ci eate chemical constituents suitable for deposition upon a substrate, or with dry plasma etching to create chemical constituents suitable foi the removal of specific materials fiom the suiface of a substrate

[00051 In general, during plasma piocessing such as in the aforementioned processes, excess sputtered adatom in PVD systems, excess deposition chemistry in CVD systems, or excess etch chemistiy and/or etch residue in etch systems can deposit on process system suifaces and accumulate from piocess-to-process Therefoie, such systems aie commonly equipped with piotective elements oi neis that protect the undeilytng suifaces of mote expensive piocessing components, and that can be replaced peiiodtcally with deposit-free, cleaned, lefutbished, oi new piotective elements Typically, the fiequency for element replacement is governed by the type of piocess, and the natuie of the matei ial oi film that accumulates on the exposed suifaces of the piotective elements Hence, it is additionally impeiative to piovide protective elements at low cost It is fuithei imperative to piovide surfaces in contact with the piocessing envuonment that facilitate the adhesion of excess matetials, and, in time, reduce contamination of future processes, such as by pai tides flaking off of surfaces, for example, and to provide longei cycles between replacement of the pi otective elements

[0006] Further, it is not uncommon to encounter an evolution of processing system configuration (I e change in size of processing chamber, pumping system, etc ) during the lifetime of a processing system Typically, the continual evolution of a processing system as a manufacturing product has required an inventory of protective elements, each element or set of elements specific to a particular configuration Hence, it is also imperative to provide low cost, replaceable protective elements that possess sufficient flexibility for use in a processing system having multiple configurations Summary of the Invention

[0007] An objective of the piesent invention is to piovide low cost elements, and low cost methods of manufacturing elements, used to piotect the internal surfaces of vacuum piocessing chambeis used in semiconductor wafer processing Pai ticular objectives are to provide chamber shields, and methods of manufacturing chamber shields that protect the suifaces of processing chambers and components of the machines in such chambers fiom deposition dining processing

[0008] A mote paiticulai objective of the invention is to provide such elements with surface propei ties that resist the generation of particles that would contaminate processes performed in the chamber and the substrates being piocessed, such as by preventing the flaking of deposits that accumulate on those elements

[0009] Anothei objective of the piesent invention is to provide elements in configurations that will fit a variety of different machine configuiations and applications so that different size or shaped elements need not be manufactured and inventoiied for each such machine configuration or application

[0010] The piesent invention provides an adaptable processing element foi use in a piocessing system and method of making the same

[0011] Inparticulai, ceitain embodiments of the piesent invention provide a piocessing element, patticularly embodied in chamber shields and chamber shield assemblies, for use in a piocessing system having two or moie different configurations oi applications Such elements may include a primary component, and a detachable component coupled to the primary component, wherein the processing element is configured for use in a first configuration of the processing system when the detachable component is retained with the pi unary component and the piocessing element is configured foi use in a second configuration of the piocessing system when the detachable component is removed In the lllustiated embodiments, chambei shields aie piovided having components that are lemovable from then components so as to adapt the shields to machines of different configurations [0012] Additionally, accotding to cei tain embodiments of the invention, a process kit is provided foi use in a piocessing system The kit is useful for a piocessing system that includes a piocessing chambei having an upper chambei portion and a lower chamber portion, a taiget assembly coupled to the processing chambei, a substiate holdei for supporting a substiate coupled to the piocessing chamber, a pumping system, and a pumping duct coupling the pumping system to the processing chamber The piocess kit, in the illustrated embodiments, includes a dooi shield coupled to the uppei chambei portion of the pi ocessing chamber and configured with a detachable ting The detachable nng is retained to facilitate use of the dooi shield with a fust taiget assembly configuiation and lemoved to facilitate use of the door shield with a second tai et assembly configuiation Similai ly, a pod shield is provided that can be coupled to the lowei chamber portion of the processing chambei and configured with a first detachable gas injection punch-out coupled to a right-hand side of the pod shield and a second detachable gas injection punch-out coupled to the left-hand side of the pod shield The first detachable gas injection punch-out is removed to facilitate use of the pod shield with a right-hand onentation of the processmg system and the second detachable gas injection punch-out is removed to facilitate use of the pod shield with a left-hand side orientation of the processing system Alternatively, neither punchout is removed where no gas mlet ring is present in the machine A pumping duct shield is similaily piovided coupled to the pumping duct and configuied with a detachable shield extension The detachable shield extension is retained to facilitate use of the pumping duct shield with a first size of the pumping duct and retained to facilitate use of the pumping duct shield with a second size of the pumping duct [0013| Additionally, a method of producing a piocessing element foi use in a processing system is provided The method comprises fabricating the processing elements described above by configuring sheet metal shields with stamped or laser cut perforations, or other types of weakened members, to facilitate the removal of the removable components horn the primary components

[0014] Additionally, a method of using a processing element in a processing system having two or more configuiations as desciibed above is piovided The method comprises providing the elements as described above and using the elements by letaimng the removable elements for use with some configuiations of processing systems and lemoving the removable elements for use with othei configurations of processing systems The method includes determining whether the processing element is for use in a first configuration of the piocessing system and whether the processing element is for use in a second configuration of the processing system, retaining the detachable component to facilitate use of the processing element with the fust configuiation of the processing system, and lemoving the detachable component to facilitate use of the processing element with the second configuration of the pi ocessing system

[0015] Additionally, a method ofpioducing a piocessing element for use in a piocessing system, which element has one or mote surfaces theieof exposed to a process in the piocessing system duiing processmg, by belt sanding the one or oi e sui faces of the element to promote adhesion of materials dui ing such process

[0016] Additionally, a method of piocessing a substrate in a processing system is also provided by providing one or more of such piocessing elements in the piocessing system to protect the piocessing system duπng the process, and theieby piotect the piocess and the substrate from contamination In the preferred embodiment, the one oi more processing elements is provided in which the one oi more suifaces thereof that is exposed to the piocess is alteied by belt sanding The process involves disposing the substrate in the piocessing system having the belt sanded piocessing elements therein and exposing the substrate to the piocess [0017] A processing element foi use in a piocessing system is described having one oi moie suifaces that are to be exposed to a piocess in the piocessing system dui ing piocessing having been alteied by belt sanding In the embodiments desci ibed heiein, the elements are shields that protect the internal suifaces of wafer piocessing machines, paiticulaily deposition and etch machines foi piocessing semiconductors [0018] An embodiment of a method of pioducing chamber shield elements is particularly provided Certain such methods include fabncating the shields preferably from sheet metal, for example, from spun metal, and may include shields fabncated from a sheet of metal, roughened according to the present invention, into a ring having a lip region and a flange region formed by spinning an integral sheet of material [0019] These and other objectives and advantages of the present invention will be more readily apparent from the detailed description of the diawings in which Brief Description of the Drawings

[0020] FIG 1 shows a simplified diagiam of a processing system according to an embodiment of the present invention,

[0021] FIG 2A shows a schematic side view of a processing system accoiding to another embodiment of the present invention,

[0022] FIG 2B shows a schematic top view of the processing system illustrated in FIG 2A,

[0023] FIG 3 A presents an assembly view of a process kit coupled to an upper chambei portion of the processing system presented in FIGs 2 A, and 2B,

[0024] FIG 3B presents an additional assembly view of a process kit coupled to a lower chamber poition of the processing system piesented in FIGs 2A and 2B,

|0025] FIG 4A piesents a top view of a door shield according to an embodiment of the present invention, [0026] FIG 4B presents a side view of a door shield according to an embodiment of the piesent invention,

[0027] FIG 4C presents an expanded top view of the door shield presented in FIG 4A,

[0028] FIG 4D piesents anothei expanded top view of the door shield presented in FIG 4A,

[0029] FIG 4E presents anothei expanded top view of the door shield presented in FIG 4A, [0030] FIG 5 A piesents a top view of a pod shield according to an embodiment of the present invention,

[0031] FIG 5B presents a side view of a pod shield accoiding to an embodiment of the piesent invention,

[0032| FIG 5C presents an expanded top view of the pod shield presented in FIG 5A, [0033] FIG 5D presents another expanded top view of the pod shield presented in FIG 5A,

[0034] FIG 5E presents anothei expanded top view of the pod shield presented in FIG 5A,

[0035] FIG 6A presents a top view of a left-hand gas injection ring according to an embodiment of the present invention,

[0036] FIG 6B piesents a side view of a left-hand gas injection ring according to an embodiment of the present invention,

[0037] FIG 6C piesents a top view of a nght-hand gas injection ring accoiding to an embodiment of the present invention,

[0038] FIG 6D presents a side view of a nght-hand gas injection ring according to an embodiment of the present invention, [0039] FIG 7A presents a side view of a pumping duct shield according to an embodiment of the present invention,

[0040| FIG 7B presents a top view of a pumping duct shield according to an embodiment of the present invention, [00411 FIG 7C presents a top view of a pumping duct shield according to another embodiment of the present invention,

[0042] FIG 8 illustrates a surface tieatment pattern on a processing element according to an embodiment of the piesent invention, [0043] FIG 9 presents a method ofpioducing a piocessing element according to an embodiment of the present invention,

[00441 FIG 10A piesents a method of pioducing a processing element according to anothei embodiment of the present invention,

[0045] FIG 10B piesents a method of pioducing a processmg element accoiding to anothei embodiment of the present invention, and

[0046] FIG 11 presents a method of installing a processing element in a piocessing system according to another embodiment of the present invention,

[0047] FIG 12A piesents a top view of a daik space shield according to an embodiment of the present invention, [0048] FIG 12B presents a cross-sectional view of the dark space shield depicted in FIG 12A,

[00491 FIG 12C presents an expanded view of the cross-sectional view of the dark space shield depicted in FIG 12B,

[0050] FIG 13A piesents a top view of a dark space shield according to anothei embodiment of the present invention, [0051] FIG 13B piesents a cioss-sectional view of the dark space shield depicted in FIG 13 A,

[0052] FIG 13C presents an expanded view of the cross-sectional view of the dark space shield depicted in FIG 13B,

[0053] FIG 14A presents a top view of a ling shield accoiding to an embodiment of the piesent invention, and [0054] FIG 14B piesents a cioss-sectional view of the I ing shield depicted in FIG 13A

Detailed Description:

|0055] According to an embodiment of the piesent invention, a piocessing system 15 is depicted in FIG 1 comprising a piocessing chambei 16, a substiate holder 20 for supporting a substiate 25, and a pumping duct 40 coupled to a pumping system 45 foi alteiing the piessure of a processing region 30 in processing chamber 16 For example, processing chamber 16 can facilitate processing substrate 25 at elevated pressure, atmospheric piessuie, oi leduced (vacuum) piessure Moreovei, for example, piocessing chamber 16 can facilitate the fotmation of a piocessing plasma in the processing region 30 adjacent substrate 25 The processing system 15 can be configuied to process various substrates (I e 100 mm, 200 mm substrates, 300 mm substrates, or laigei) [0056] Desirably, processing system 15 comprises a deposition system such as a physical vapor deposition (PVD) system In another embodiment, processing system 15 comprises a chemical vapor deposition (CVD) system In yet another embodiment, processing system 15 comprises a plasma-enhanced chemical vapor deposition (PEC VD) system Alternately, processing system 15 comprises an etch system [0057] Referring again to FIG 1 , pi ocessing system 15 further comprises one or more processing elements 50 coupled to the processing chamber 16, and configuied to protect one or more valuable surfaces 60 of the processing chamber 16 Additionally, the one oi more processing elements 50 compnse one or moie exposed surfaces 70 that ate exposed to oi in contact with the processing environment in processing region 30 The one oi more processing elements 50 can, for example, constitute a process kit that can be periodically replaced wholly, or pait-by-part The one or more processing elements 50 can be fabricated from a variety of materials including metals such as aluminum, stainless steel, etc , and non-metals such as ceramics (e g alumina, quartz, silicon carbide, etc ) Thereafter, the one or more exposed surfaces 70 on the one or more processing elements 50 are tieated to increase the suiface roughness in older to impiove the adhesion of materials during processing In one embodiment, the one or more exposed suifaces 70 are toughened using a belt sandei to, foi example, an avetage roughness in excess of Ra=250 mil (or 6 3 micron) The belt sanding can be caiπed out befoie the spinning of the sheet metal to foim the shields, for example, by forming giooves theiein in at least two dnections such that said grooves foim an intersecting pattern [0058] The use of belt sanding to toughen a surface for improved adhesion has lesulted in a significant reduction in fabncation cost (gieatei than 50% reduction), as opposed to conventionally used techniques such as grit blasting, etc For example, pnor to assembly, sheet metal can be diawn thiough a belt sander foi a first pass, then rotated 90 degiees and drawn through the belt sander for a second pass In doing so, a cross-hatched pattern can be foimed The belt sander can, for example, comprise a 36 gut (silicon catbide) abrasive surface Alternatively, the belt sander can, for example, comprise a 40 gut, 50-60 gπt, or 80-100 grit abrasive suiface Making the piocessing elements 50 out of sheet metal allows belt sanding to be used and the belt sanding piocess to be applied when the sheet metal is flat, before it is formed into the shapes needed for the shields With prior machined shields, more expensive roughening processes had to be used [0059] Accoiding to anothei embodiment of the piesent invention, FIGs 2A and 2B piesent a side view and a top view, lespectively, of a physical vapoi deposition (PVD) piocessing system 101 compnsing a pi ocessing chambei 110, a substiate holdet 120 fot supporting a substrate 125, a sputtertaιget assembly 135, and a pumping duct 140 coupled to a pumping system 145 foi altering the pressuie of a piocessing legion 130 in piocessing chambei 1 10 Foi example, piocessing chambei 1 10 can facilitate processing substiate 125 at leduced (vacuum) pressuie Moieovei, piocessing chamber 1 10 can facilitate the foimation of a processing plasma in the piocessing legion 130 adjacent substiate 125 and sputtei taiget assembly 135 The processing plasma can be foimed of a chemically inert species such as a Noble gas (e g Argon) that is configured to lntetact with the sputtei target and through physical ion bombardment of the sputter target intioduce sputteied adatom to the processing region 130 for deposition onto substrate 125 For example, the sputtei target assembly can comprise a copper target to which electrical bias (direct cuπent, DC, alternating current, AC, or RF) is applied The sputter target assembly 135 may or may not further comprise a magnet system

[0060] Referring still to FIGs 2 A and 2B, processing system 101 further comprises one or more processing elements 150 coupled to the piocessing chamber 1 10, and configured to protect one or more valuable surfaces 160 ofthe processing chambei 1 10 Additionally, the one or more processing elements 150 comprise one oi more exposed suifaces 170 that aie exposed to or in contact with the piocessing environment in processing region 130 The one or moie processing elements 150 can, foi example, constitute a process kit that can be periodically leplaced wholly, or part-by-part [0061] For example, processing chamber 1 10 can comprise a lower chamber portion 1 12 (or pod), and an uppei chambei portion 114 (or pod door) The upper chamber portion 114 can be coupled to the lower chamber portion 112 using, for example, a hinge (not shown), and, therefore, it can seive as a chamber door for opening the processing chamber 110 and accessing its interior FIGS 3 A and 3B illustrate processing elements in the foim of chamber shield assemblies of a type configured for a pi ocessing apparatus ofthe type described in U S PatentNo 4,915,564 Prior art and other shields for this apparatus are described in detail in U S Patent Application Serial No 10/349,661, filed January 23, 2003, hereby expressly incorporated heiein by refetence As shown in FIG 3A, a piocess kit 151 can compnse processing elements coupled to the uppei chamber portion 1 14, wherein the process kit 151 comprises a door shield 152, an adaptoi shield 152A, and a dark space shield 152B The dark space shield 152A and adaptei shield 152B aie configuied to fit a sputtei ing cathode adapter that supports the cathode assembly in a pod door Configurations of such adapters and shields are discussed in detail in U S Patent Application No 10/438,304, heteby expiessly lncorpoiated heiein by reference Moieover, with lefeience now to FIG 3B, the process kit 151 can fuithei compnse processing elements coupled to the lower chamber portion 112, wherein the process kit 151 compπses a pod shield 154, an optional gas injection ting 155, a gas ring shield 155A, a ring shield 155B, a substiate holder shield 155C, a plenum shield 155D, an (optional) heater shield 155E, and a pumping duct shield 156 Each of the processing elements listed above are replaceable and serve to protect valuable suifaces 160 of piocessing chambei 1 10

[0062] FIGs 4 A and 4B present a top view and a side view, respectively, ofthe door shield 152 that is coupled to the upper chambei portion 114 The door shield 152 can comprise one or more access features 180 in order to permit the access of measuiement instrumentation, such as pressure sensing devices, to the processing region 130 within piocessing chamber 1 10 For example, each access feature can comprise a clustei of thiee through-holes, wherein the measurement device can be positioned behind the centei of the clustei and, theiefoie, pievent excessive deposition of process matenals on the measuiement device [0063] Additionally, the dooi shield 152 can be fabricated to accommodate different sizes foi the taiget housed within target assembly 135 As depicted in FIG 4A, door shιeld 152 compnses a pιιmaιy component 182 that is suitable foi a fust taiget size, and a detachable component 184 that is suitable for a second size The primary component 182 is part of the same metal sheet of which the detachable component 184 is part Pnmary component 182 includes sepaiate pieces 182a, 182b and 182c, when the detachable component 184 is removed Howevei, the sepaiate pieces 182a, 182b and 182c retain their spacial relationship when installed in the chambei because each is separately secured to structuie of the chamber When the detachable component 184 is lemoved, the primary component 182 (herein referring collectively to the three pieces 182a, 182b and 182c) can be coupled to the upper chamber portion 1 14 to accommodate a twelve (12) lnch diametei taiget. and, when the detachable component 184 is not removed. the primary component 182 with the detachable component 184 can be coupled to the upper chamber portion 1 14 to accommodate a ten (10) inch diameter target The door shield 152 further compi lses a first set of mounting features 186 utilized for the fust taiget size for coupling the door shield 152 to the upper chamber portion 1 14, a second set of mounting featui es 188 utilized for the second target size for coupling the dooi shield 152 to the upper chamber portion 1 14, and a third set of mounting featui es 190 common to all ofthe target sizes for coupling the dooi shield 152 to the upper chamber portion 1 14 Each mounting feature 186, 188, and 190 can, foi example, peimit the passage of a fastener, such as a bolt, for fastening the door shield 152 to the processing chamber 1 10 upon receipt of the fastener in a tapped feature

[0064] FIG 4C piesents an expanded view ofthe door shield 152 with the detachable component 184, and FIGs 4D and 4E present expanded views of the coupling between the detachable component 184 and the primary component 182 As lllustiated in FIGs 4D and 4E, a narrow cut 195 can be made within the door shield 152 leaving one or more attachment features 194 and, thereby, delineate the pπmaiy component 182 and the detachable component 184, the detachable component 184 comprising a detachable ling The narrow cut 195 can be achieved, for example, using a laser cutting system, and the width ofthe cut can, for example, be appioximately 10 to 80 mil (e g , 30 mil) Additionally, the one or more attachment features can, for example, be appioximately 10 to 160 mil in length (e g , 60 mil) The smallness of the remaining one oi moie attachment features 194 can permit simple decoupling of the detachable component 184 from the pnmaiy component 182 (e g manual flexing and snapping ofthe two pieces) Therefoie, a single piocessing element can be fabncated, while providing the flexibility of use with different sized taigets

[0065] FIGs 5 A and 5B present a side view and a top view, respectively, of a pod shield 154 that is coupled to the lowei chamber portion 1 12 The pod shield 154 can, for example, be fabncated from a floor portion 200 and a wall portion 202, wheiein the floor portion 200 is coupled to the wall portion 202 using a plurality of attachment elements 204 Foi example, the attachment elements 204 can comprise tabs for welding the floor portion 200 to the wall portion 202 Futthermoie, the pod shield 154 comprises a plurality of mounting features 206 foi coupling the pod shield 154 to the lower chambei portion 112 of processing chamber 110 Each mounting featuie 206 can, for example, permit the passage of a fastener, such as a bolt, foi fastening the pod shield 154 to the piocessing chamber 110 upon receipt ofthe fastener in a tapped featuie [0066] Referring still to FIGs 5A and 5B, the pod shield 154 fuither compiises one oi more detachable components 208 coupled to a pi imai y component compnsing flooi portion 200 and wall portion 202 For example, the one or moie detachable components 208 can compnse detachable gas injection punch-outs 210 located on opposite sides ofthe pod shield 154 The detachable gas injection punch-outs can facilitate use of the pod shield 154 on eithei a nght-hand system wherein the process gas(es) entei piocessing region 130 on the nght-hand side of piocessing chamber 1 10, or a left-hand system wheiein the piocess gas(es) enter processing legion 130 on the left-hand side of the processing chamber 1 10 As illustrated in FIG 5C, a narrow cut 213 can be made within the wall portion 202 ofthe second processing element 154 leaving one or more attachment features 212 and, thereby, delineate the primary component comprising wall portion 202 and floor portion 200, and the detachable gas injection punch-outs 210 The nanow cut 213 can be achieved, for example, using a lasei cutting system, and the width of the cut can, for example, be approximately 10 to 80 mil (e g , 30 mil) Additionally, the one or more attachment features can, for example, be approximately 10 to 160 mil in length (e g , 60 mil) The smallness of the lemaining one or more attachment featuies 212 can permit simple decoupling of the detachable gas injection punch-outs 210 from the pnmaiy component Therefore, a single processing element can be fabncated, while providing the flexibility of use with diffeient processing chamber orientations, l e gas injection orientations, if lequired

[0067] Additionally, foi example, the one or more detachable components 208 can comprise detachable clearance punch-outs 214 and detachable gas inject line clearance punch-outs 216 to accommodate an optional gas injection ring 240 piesented in FIGs 6A,B (left-hand gas injection ring, top and side views, respectively) and 6C,D (right-hand gas injection ring, side and top views, respectively) For example, the optional gas injection ring 240 (240') compiises a distribution ring 241 (24 T), a gas entry port 242 (242'), and a plurality of mounting stiuctuies 244 (244') As illustrated in FIG 5D, a narrow cut

219 can be made within floor portion 200 of the pod shield 154 leaving one or more attachment features 218 and, theieby, delineate the primary component comprising wall portion 202 and floor portion 200, and the detachable clearance punch-outs 214 The detachable clearance punch-outs, once removed, can piovide clearance for the plurality of mounting structures 244 utilized to affix the gas injection ring 240, 240' to the substrate holder shield 155C Moieovei, as lllustiated in FIG 5E, a narrow cut 221 can be made within floor portion 200 ofthe pod shield 154 leaving one oi more attachment featuies 220 and, thereby, delineate the pnmaiy component compnsing wall portion 202 and floor portion 200, and the detachable gas inject line clearance punch-outs 216 The detachable gas inject line clearance punch-outs 216, once removed, can provide clearance foi a flexible gas line (not shown) foi coupling a gas supply (not shown) to the gas entiy port 242, 242' of the gas injection nng 240, 240' The narrow cut 219, 221 can be achieved, for example, using a lasei cutting system, and the width of the cut can, foi example, be approximately 10 to 80 mil (e g , 30 mil) Additionally, the one or moie attachment features can, for example, be appioximately 10 to 160 mil in length (e g , 60 mil) The smallness ofthe remaining one or more attachment features 218,

220 can permit simple decoupling of the detachable clearance punch-outs 214 and detachable gas inject line clearance punch-outs 216 from the pnmaiy component Theiefore, a single piocessing element can be fabricated, while providing the flexibility of use with diffeient optional gas injection nng orientations [0068] FIG 7A presents a side view ofa pumping duct shield 156 that is coupled to the pumping duct 140 ofptocessing system 110 The pumping duct shield 156 comprises a pnmaiy component 230 and a detachable component 232 coupled theieto For example, the pumping duct shield 156, as depicted in FIG 7A, can be fitted within two different pumping ducts of different size (I e different diameter pumping duct) FIG 7B illustrates a configuiation for a first size of a pumping duct, wherein the detachable component 232 has not been lemoved FIG 7C illustiates a configuration for a second size of a pumping duct, wheiein the detachable component 232 has been removed Additionally, the pumping duct shield 156 can, optionally, comprise one or more tabs 236 that, once the pumping duct shield 156 is fitted within the pumping duct 140, each tab can be bent ladially outward to retain the pumping duct shield 156 in the pumping duct 140 As illustrated in FIG 7 A, a naπow cut can be made within the pumping duct shield 156 leaving one or more attachment features 234 and, thereby, delineate the primary component 230 from the detachable component 232, the detachable component 232 comprising a detachable shield extension The nanow cut can be achieved, for example, using a laser cutting system, and the width of the cut can, for example, be appioximately 10 to 80 mil (e g , 30 mil) Additionally, the one or more attachment featuies can, for example, be approximately 10 to 160 mil in length (e g , 60 mil) The smallness of the remaining one or more attachment features 234 can permit simple decoupling ofthe detachable component fiom the primary component Therefore, a single piocessing element can be fabricated, while providing the flexibility of use with different sizes of the pumping duct

[0069] The one or moie piocessing elements 152, 154, and 156 can be fabricated fiom a vanety of materials including metals such as aluminum, etc As described above, the one or moie exposed surfaces 170 on the one oi more piocessing elements 150, such as 152, 154, 156, aie heated to inciease the surface roughness in ordei to impiove the adhesion of matenals In one embodiment, the one or moie exposed surfaces 170 are roughened using a belt sander to, foi example, a roughness in excess of Ra=250 mil (or 6 3 micron) Additionally, for example, the 1 oughening treatment ofthe one or more exposed surfaces can be applied to form a cross-hatching pattern 250 as shown in FIG 8 For example, prior to assembly, sheet metal can be drawn through a belt sander for a first pass, then rotated 90 degrees and drawn through the belt sander for a second pass In doing so, a cross-hatched pattern can be foimed The belt sander can, for example, comprise a 36 grit (silicon carbide) abrasive surface Alternatively, the belt sander can, for example, comprise a 40 gut, 50-60 grit, or 80-100 grit abrasive surface [0070] FIG 9 presents a method of producing a processing element for use in a processing system, such as the ones desciibed in FIGs 1, 2A, and 2B A flow diagram 300 begins in 310 with fabncating the processing element The piocessing element can, for example, comprise a chamber liner, a deposition shield, an instrument shield, a baffle plate, a duct liner, etc Additionally, for example, the piocessing element can comprise a dooi shield as described in FIGs 4A-E, a pod shield as described in FIGs 5 A-E, oi a pumping duct shield as desciibed in FIGs 7A-C The piocessing element is formed from sheet metal oi spun metal Foi example, the fabi ication ofthe processing element can further compnse at least one of machining, casting, polishing, foiging, and gnnding Each processing element described above can be fabricated according to specifications set forth on a mechanical di awing

[00711 In 320, one or more suifaces ofthe piocessing element, to be exposed to the piocessing envuonment dining processing (exposed surfaces), aie roughened to an average roughness Ra in excess of 250 mil (oi 6 3 micron) using a belt sanding technique The belt sanding technique can, for example, furthei comprise a roughening application to the one or more exposed surfaces ofthe processing element having a cioss-hatched pattern

[00721 Fabrication of each processing element can further compnse at least one of providing a surface anodization on one or more surfaces, providing a spray coating on one oi more surfaces, or subjecting one or more surfaces to plasma electrolytic oxidation For example, the spray coating can comprise at least one of A1203, Yttπa (Y203), Sc203, Sc2F3, YF3, La203, Ce02, Eu203, and Dy03 Methods of anodizing aluminum components and applying spray coatings aie well known to those skilled in the art of surface material tieatment [0073] FIG 10A presents a method of pioducing a processing element for use in a piocessing system, such as the ones described in FIGs 1, 2 A, and 2B A flow diagram 400 begins in 410 with fabricating the processing element, wheiein the processing element comprises a primary component In 420, at least one detachable component is formed in the primary component The processing element can, for example, comprise a chambei linei, a deposition shield, an instrument shield, a baffle plate, a duct liner, etc Additionally, for example, the processing element can comprise a door shield as described in FIGs 4A-E, a pod shield as described in FIGs 5 A-E, or a pumping duct shield as described in FIGs 7A-C The processing element is foimed from sheet metal or spun metal For example, the fabrication of the processing element can further comprise at least one of maclunmg, casting, polishing, forging, and grinding Each piocessing element desciibed above can be fabricated according to specifications set forth on a mechanical dtawing

[0074] The detachable component can be coupled to the primary component via one or more attachment features For example, the attachment feature can be formed by providing a narrow cut, such as that derived from a laser cutting system, along a line or curve delineating the pnmary component and the detachable component Each attachment featuie can, foi example, range from 10 to 80 mil in width (I e , 30 mil), and lange fiom 10 to 160 mil in length (I e , 60 mil) The detachable component can, for example, be coupled to a processing element, such as a door shield, foi permitting the flexible use ofthe door shield with target assemblies of vanous sizes Additionally, for example, the detachable component can compnse a punch-out (or knock-out) and can be coupled to a processing element, such as a pod shield, for permitting flexible use of the pod shield with gas injection systems of different orientation (l e a right-hand system versus a left-hand system) Additionally, for example, the detachable component can, for example, be coupled to a pumping duct shield for permitting the flexible use ofthe pumping duct shield with pumping ducts of various sizes

[0075] FIG 10B presents another method of producing a processing element for use in a processing system, such as the ones desciibed in FIGs 1, 2A, and 2B A flow diagram 430 begins in 410 with fabricating the processing element, wherein the processing element comprises a pnmaiy component, and, in 420, with forming at least one detachable component in the pi lmaiy component In 440, fabrication of each processing element can furthei compnse at least one of providing a surface anodization on one oi moie suifaces, pioviding a spray coating on one oi more suifaces, or subjecting one oi more suifaces to plasma electiolytic oxidation For example, the spiay coating can comprise at least one of A1203, Yttna (Y203), Sc203, Sc2F3, YF3, La203, Ce02, Eu203, and Dy03 Methods of anodizing aluminum components and applying spray coatings aie well known to those skilled in the ait of surface mateiial tieatment

[0076| FIG 11 presents a method of using a piocessing element in a processing system, such as those described in FIGs 1, 2A, and 2B A flow diagram 500 begins in 510 with fabricating the processing element, wherein the processing element comprises a primary component and at least one detachable component The processing element can, for example, comprise a chamber liner, a deposition shield, an instrument shield, a baffle plate, a duct liner, etc Additionally, for example, the processing element can compnse a door shield as desciibed in FIGs 4A-E, a pod shield as described in FIGs 5 A-E, or a pumping duct shield as desciibed in FIGs 7A-C

[0077] In 520, a deteimination is made whether to remove one or moie of the at least one detachable components If one oi more of the at least one detachable components are to be lemoved, then they are removed and discaided in 530 and the processing element is installed within the processing chamber in 540 Otherwise, they are installed in the processing chamber without removal of one or more ofthe at least one detachable components

[0078] In an example, the processing element is a door shield (FIG 4A) If the processing system comprises a ten ( 10) inch diametei sputter taiget, then the detachable component described in FIGs 4A-E is not removed prior to installation If, however, the processing system comprises a twelve ( 12) inch diametei sputter target, then the detachable component described in FIGs 4A-E is removed prior to installation In anothei example, the piocessing element is a pod shield (FIG 5 A) If the processing system comprises a gas injection system having a nght-hand side orientation, then the detachable gas injection punch-out (FIG 5C) located on the nght-hand side of the pod shield is removed prior to installation If, on the othei hand, the piocessing system comprises a gas injection system having a left-hand side orientation, then the detachable gas injection punch-out located on the left-hand side ofthe pod shield is removed pnor to installation Additionally, if an optional gas injection ring is employed, the detachable clearance punch-outs (FIG 5D) ai e l emoved pi lor to installation Furtheimore, if the piocessing system comprises a gas injection system having a I lght-hand side orientation, then the detachable gas inject line cleaiance punch-out (FIG 5E) is lemoved pnoi to installation If, on the other hand, the piocessing system comprises a gas injection system having a left-hand side onentation, then the detachable gas inject line clearance punch-out is removed pnoi to installation In yet another example, the processing element is a pumping duct shield If the pumping duct shield is to be fitted with a pumping duct of smallei diameter, then the detachable component is removed pnoi to installation If, however, the pumping duct shield is to be fitted with a pumping duct of larger diameter, then the detachable component is not removed pnoi to installation

[0079] Referring now to FIGs 12 A and 12B, a top view and cross-sectional view of the daik space shield 152B is presented The daik space shield 152B can be a member of a shield assembly coupled to the target assembly and configuied to sunound and piotect a peripheral edge of the sputter target mounted within the taiget assembly As shown in FIG 3A, the shield assembly can, for example, further compnse an adaptor shield 152A The daik space shield 152B comprises a flange region 600 and a lip legion 610, coupled theieto As shown in FIG 3A, the daik space shield 152B is coupled to the target assembly using fasteners as shown that extend thiough fastening holes 620 in dark space shield 152B, and is configured to surround the sputtei target (not shown) By surrounding the peripheral edge ofthe sputter target, coupled to target assembly 135, a cleaiance space is formed between an inner surface 625 of lip region 610 ofthe dark space shield 152B and the outer edge ofthe target This space can, for example, be less than 1 mm in order to prevent plasma fiom penetiating this space and eroding the peripheral edge of the sputter target FIG 12C shows an expanded view of the lip region 610 and the inner surface 625 [0080] In an alternate embodiment, refernng now to FIGs 13A and 13B, a top view and cioss-sectional view of a daik space shield 700 is piesented The dark space shield 700 can be a member of a shield assembly coupled to the target assembly and configured to sunound and protect a peripheral edge ofthe sputter target mounted within the taiget assembly, thereby combining both the traditional dark space shield and the adapter shield The dai k space shield 700 comprises a flange region 710, a lip region 720, and an adaptor legion 730, coupled theieto The adapter region 730 performs the function of a separate adapter shield The daik space shield 700 is coupled to the target assembly using fasteneis as shown that extend through fastening holes 740 in daik space shield 700, and is configured to surround the sputter target (not shown) By sunoundmg the penpheial edge of the sputtei target, coupled to taiget assembly 135, a clearance space is formed between an innei surface 745 oflip region 720 ofthe dark space shield 700 and the outer edge of the taiget This space can, foi example, be less than 1 mm in order to pieventplasma from penetrating this space and eioding the peripheral edge of the sputter target FIG 13C shows an expanded view of the lip region 720 and the inner surface 745

[0081] Referring now to FIGs 14A and 14B, a top view and a cross-sectional view of the ring shield 155B are illustrated The nng shield 155B can be a member of a shield assembly for protecting a substrate holder The nng shield 155B comprises a flange region 630 and a lip region 640, coupled thei eto As shown in FIG 3B, the nng shield 155B is coupled to the substrate holder shield 155C using fasteneis as shown that extend through fastening holes 650, and is configuied to protect the pod shield 154 and the substiate holder shield 155C Additionally, nng shield 155B can further comprise clearance notches 655 to permit coupling an optional gas injection nng 155

[00821 As lllustiated in FIGs 12A thiough 12C, FIGs 13A through 13C, and FIGs 14A and 14B, the dark space shield 152B and the nng shield 155B are fabricated fiom spun metal The metal can, for example, comprise aluminum This fabi ication piocess can lead to a cost reduction in excess of 50% Any of the above described daik space shields oi nng shields can be fabricated for 200 mm, 300 mm, or greatei diametei systems Additionally, fabrication ofthe dark space shield 152B and the ring shield 155B can further comprise at least one of pioviding a suiface anodization on one or more surfaces, pioviding a spray coating on one or more surfaces, oi subjecting one or more surfaces to plasma electrolytic oxidation Foi example, the spray coating can compnse at least one of A1203, Yttria (Y203), Sc203, Sc2F3, YF3, La203, Ce02, Eu203, and Dy03 Methods of anodizing aluminum components and applying spray coatings are well known to those skilled in the art of surface material treatment

[0083] Although only certain exemplaiy embodiments of this invention have been desciibed in detail above, those skilled in the ait will leadily appieciate that many modifications are possible in the exemplaiy embodiments without matenally departing from the novel teachings and advantages of this invention All such modifications are intended to be included within the scope of this invention

Claims

Accordingly, the following is claimed

1. A processing element for use in a processing system of any one of two or more configurations comprising a primary component, and a detachable component coupled to the pnmaiy component, wheiein said processing element is configured for use in a fiist configuiation of said processing system when said detachable component is retained with said pnmaiy component and said processing element is configured for use in a second configuiation of said processing system when said detachable component is removed

2. The processing element as recited in claim 1, wherein said detachable component is coupled to said pi lniaiy component by one or more attachment features, said attachment features are formed by cutting said processing element along a cuive to delineate said detachable component from said pnmaiy component with the exception of the location of said attachment features

3. The processing element as recited in claim 2, wherem said cutting is peiformed using a laser cutting system

4. The processing element as recited in claim 2, wherein said one or more attachment features comprise a width and a length, said width ranges fiom 10 to 80 mil, and said length ranges from 10 to 160

5. The processing element as lecited in claim 1 , wherein said processing system compi lses at least one of a physical vapor deposition system, a chemical vapor deposition system, and an etch system

6. The processing element as lecited in claim 5, wherein said piocessing system compiises a physical vapor deposition system, said piocessing system compnsing a piocessing chamber having an upper chambei portion and a lower chambei poi tion, a taiget assembly coupled to said processing chamber, a substrate holder for supporting a substiate coupled to said processing chamber, a pumping system, and a pumping duct coupling said pumping system to said processing chamber

7. The processing element as lecited in claim 6, wherein said processing element compiises at least one of a door shield coupled to said uppei chamber portion of said processing chamber, a pod shield coupled to said lower chamber portion of said piocessing chamber, and a pumping duct shield coupled to said pumping duct

8. The processing element as lecited in claim 7, said detachable component comprises a detachable ring coupled to said door shield, wheiein said detachable ring is letained when using said door shield with a first size of said target assembly and said detachable ring is removed when using said door shield with a second size of said target assembly

9. The processing element as lecited in claim 8, wherein said first size comprises a target assembly for substrate diameters less than 290 mm, and said second size comprises a target assembly foi substrate diameters gieater than 290 mm

10. The processing element as recited in claim 7, said at least one detachable component comprises a first detachable gas injection punch-out and a second detachable gas injection punch-out removably coupled to said pod shield using at least one attachment feature, wherein said first gas injection punch-out is coupled to a right-hand side of said pod shield and said second gas injection punch-out is coupled to a left-hand side of said pod shield

11. The processing element as recited in claim 7 further comprising an optional gas injection ring, wheiein said at least one detachable component compiises at least one detachable cleaiance punch-out to provide cleai ance for mounting said optional gas injection ring to said processing system, a fust detachable gas inject line clearance punch-out to provide clearance for gas inject line in a right-hand side orientation of said piocessing system, and a second detachable gas inject line clearance punch-out to piovide clearance for a gas inject line in a left-hand side onentation of said processing system

12. The processing element as lecited in claim 7, wherein said at least one detachable component comprises a detachable shield extension coupled to said pumping duct shield, said detachable shield extension being retained for use of said pumping duct shield in a first configuiation of said pumping duct and said detachable shield extension being lemoved for use of said pumping duct shield in a second configuiation of said pumping duct

13. The piocessing element as lecited in claim 1 further compnsing a coating applied to at least one surface on said piocessing element

14. The piocessing element as recited in claim 13, wheiein said coating compiises at least one of a suiface anodization, a spiay coating, and a plasma electrolytic oxidation coating

15. A process kit for use in a piocessing system, said processing system comprising a processing chamber having an upper chamber portion and a lower chamber portion, a target assembly coupled to said processing chamber, a substrate holder for supporting a substrate coupled to said processing chamber, a pumping system, and a pumping duct coupling said pumping system to said processing chamber, said process kit comprising a door shield configured to be coupled to said upper chamber portion of said processing chamber and comprising a detachable ring, wherein retention of said detachable rmg facilitates use of said dooi shield with a first target assembly configuiation and lemoval of said detachable ring facilitates use of said door shield with a second target assembly configuiation, a pod shield configured to be coupled to said lowei chamber portion of said piocessing chamber and configuied with a first detachable gas injection punch-out coupled to a right-hand side of said pod shield using attachment featuies and a second detachable gas injection punch-out coupled to said left-hand side of said pod shield using attachment features, wherem removal of said first detachable gas injection punch-out facilitates use of said pod shield with a right-hand orientation of said processing system and removal of said second detachable gas injection punch-out facilitates use of said pod shield with a left-hand side orientation of said processing system, and a pumping duct shield configuied to be coupled to said pumping duct and comprising a detachable shield extension coupled to said pumping duct shield using attachment features, wherein retention of said detachable shield extension facilitates use of said pumping duct shield with a first size of said pumping duct and removal of said detachable shield extension facilitates use of said pumping duct shield with a second size of said pumping duct

16. The process kit as recited in claim 15 further comprising an optional gas injection ring coupled to said processing chambei

17. The piocess kit as lecited in claim 16, said pod shield is fuithei configured with one or moie detachable clearance punch-outs coupled to said pod shield using at least one attachment means, a first detachable gas inject line cleaiance punch-out coupled to said pod shield using at least one attachment means, and a second detachable gas inject line cleaiance punch-out coupled to said pod shield using at least one attachment means, wherein removal of said one or moie detachable clearance punch-outs facilitate mounting said optional gas injection nng to said piocessing chamber, removal of said first detachable gas inject line clearance punch-out facilitates use of a right-hand orientation of said optional gas injection ring, and lemoval of said second detachable gas inject line cleaiance punch-out facilitates use of a left-hand orientation of said optional gas injection ring

18. The piocess kit as iecited in claim 15, wheiein at least one of said dooi shield, said pod shield, and said pumping ducting shield fuithei compiises a coating

19. The piocess kit as recited in claim 18, wheiein said coating comprises at least one of a sui face anodization, a spray coating, and a plasma electiolytic oxidation coating

20. A method of producing a processing element for use in a processing system comprising fabricating said processing element comprising a primary component and at least one detachable component coupled to said primary component, wherein said at least one detachable component can be retained to facilitate use of said processing element with a first configuration of said processing system and said at least one detachable component can be lemoved to facilitate use of said processing element with a second configuration of said processing system

21. The method as recited in claim 20 fuithei comprising coating at least one suiface on said piocessing element

22. The method as lecited in claim 21, wherein said coating compiises at least one of applying a surface anodization, a spray coating, and a plasma electiolytic oxidation coating

23. A method of using a piocessing element in a piocessing system having two or more configurations comprising fabricating said processing element compnsing a primary component and at least one detachable component coupled to said primary component using attachment features, determining whether said processing element is for use in a first configuration of said processing system and whether said processing element is for use in a second configuration of said processing system, retaining said detachable component to facilitate use of said processing element with said first configuration of said processing system, and lemoving said detachable component to facilitate use of said piocessing element with said second configuration of said processing system

24. The method as lecited in claim 23 fuithei comprising coating at least one surface on said processing element

25. The method as lecited in claim 24, wheiein said coating comprises at least one of applying a suiface anodization, a spiay coating, and a plasma electrolytic oxidation coating

26. A door shield foi use in a physical vapor deposition system, said physical vapor deposition system comprising a processing chambei having an uppei chamber portion and a lower chamber portion, a taiget assembly coupled to said processing chambei , a substrate holder for supporting a substrate coupled to said piocessing chambei, a pumping system, and a pumping duct coupling said pumping system to said processing chambei, said dooi shield compnsing a pnmaiy component configuied to be coupled to said uppei chambei portion, said pnmaiy component being substantially rectangulai and compnsing a first rounded end and a second rounded end, wherein said second rounded end is configuied to sunound said target assembly, and a detachable component coupled to the pi unary component, said detachable component is substantially circular and is configuied to be coupled to said pi unary component at a peiipheral edge of said detachable component using at least one attachment feature, wherem said dooi shield is configuied foi use with a first size of said taiget assembly when said door shield comprises said primary component and said detachable component, and said door shield is configuied for use with a second size of said taiget assembly when said door shield comprises said primary component

27. The door shield as recited in claim 26 further comprising a coating applied to at least one surface on said door shield

28. The door shield as lecited in claim 27, wheiein said coating compiises at least one of a surface anodization, a spray coating, and a plasma electiolytic oxidation coating

29. The door shield as recited in claim 26, wheiein said first size comprises a target assembly for substiate diameters less than 290 mm

30. The door shield as recited in claim 26, wherein said second size comprises a target assembly foi substrate diameters greater than 290 mm

31. A pod shield foi use in a physical vapoi deposition system, said physical vapoi deposition system comprising a processing chamber having an upper chamber portion and a lower chamber portion, a target assembly coupled to said processing chamber, a substrate holder for supporting a substrate coupled to said processing chamber, a pumping system, and a pumping duct coupling said pumping system to said processing chamber, said pod shield comprising a pi unary component configured to be coupled to said lower chambei portion, said primary component compiises a floor portion and a wall portion coupled to said floor portion, wherein a fust end of said pnmaiy component comprises a fu t opening configured to couple with said pumping duct and a second end comprising a second opening configuied to couple with said substiate holder, a first detachable component coupled to said wall portion of said pnmaiy component using at least one attachment feature, wheiein said pod shield is configuied for use without a first gas injection configuiation accessible on a fust side of said pod shield when said first detachable component is letained, and said pod shield is configured for use with said fust gas injection configuration accessible on said first side of said pod shield when said fust detachable component is removed, and a second detachable component opposite said fust detachable component and coupled to said wall portion of said pnmaiy component using at least one attachment feature, wheiein said pod shield is configured for use without a second gas injection configuiation accessible on a second side of said pod shield when said second detachable component is letained, and said pod shield is configured for use with said second gas injection configuiation accessible on said second side of said pod shield when said second detachable component is removed

32. The pod shield as recited in claim 31 further comprising a coating applied to at least one surface on said pod shield

33. The processing element as recited in claim 32, wherein said coating compiises at least one of a surface anodization, a spray coating, and a plasma electrolytic oxidation coating

34. A pumping duct shield foi use in a physical vapor deposition system, said physical vapor deposition system comprising a processing chamber having an upper chamber portion and a lower chamber portion, a target assembly coupled to said processing chamber, a substrate holder for supporting a substi ate coupled to said piocessing chamber, a pumping system, and a pumping duct coupling said pumping system to said piocessmg chambei, said pumping duct shield comprising a pnmary component, said primary component is substantially rectangular, and a detachable component, said detachable component is substantially rectangular, wherein said detachable component is coupled to an end of said pnmaiy component using at least one attachment feature

35. The pumping duct shield as lecited in claim 34 further compi ising a coating applied to at least one surface on said pumping duct shield

36. The processing element as recited in claim 35, wherein said coating comprises at least one of a surface anodization, a spray coating, and a plasma electiolytic oxidation coating

37. A method of prepaiing, for use m a piocessing system, a processing element having one oi more surfaces exposed to a process in said piocessing system durmg processing, the method comprising fabricating a material to form the material into the shape ofthe processing element having the one or more surfaces thereon, and belt sanding said one or more suifaces to promote adhesion of materials in said process on said one oi moie surfaces

38. The method as lecited in claim 37 wheiein said belt sanding of said one oi moie surfaces is perfoimed pnor to fabricating the material into the shape ofthe processing element

39. The method as recited in claim 37 wheiein the material is a sheet metal material and said belt sanding of said one or more surfaces is peifoimed pnor to fabncating the sheet metal mateiial into the shape of the processing element

40. The method as recited in claim 37 wheiein said belt sanding of said one or more surfaces is applied to the material comprises sanding a pattern thereon that includes cross-hatching

41. The method as recited in claim 37 wherein said processing element is a removable shield for protecting internal surfaces ofthe processing system from deposition from the process

42. The method as recited in claim 37 wheiein said processing system comprises at least one of a physical vapoi deposition system, a chemical vapoi deposition system, and an etch system

43. The method as recited in claim 42 wheiein said piocessing system compiises a physical vapor deposition system, said processing system compnsing a processing chamber having an upper chamber portion and a lower chamber portion, a target assembly coupled to said processing chamber, a substrate holder for supporting a substrate coupled to said piocessing chamber, a pumping system, and a pumping duct coupling said pumping system to said processing chamber

44. The method as recited in claim 43 wherein said processing element is a removable shield for piotecting internal surfaces of the processing system from deposition from the process

45. The method as recited in claim 44, wheiein said piocessing element comprises at least one of a dooi shield coupled to said upper chambei portion of said processmg chamber, a pod shield coupled to said lower chamber portion of said processing chamber, and a pumping duct shield coupled to said pumping duct

46. The method as recited in claim 37 further comprising coating at least one suiface on said piocessing element

47. The method as lecited in claim 46 wheiein said coating comprises at least one of applying a surface anodization, a spiay coating, and a plasma electrolytic oxidation coating

48. The method as recited in claim 37 wheiein said belt sanding comprises applying a 36 gut abrasive surface

49. The method as recited in claim 37 wheiein the fabricating includes spinning a sheet metal mateiial to form said piocessing element in the shape of a ring having a geneially planai, annular flange legion and a generally cylindrical lip legion turned fiom said sheet metal material adjacent the innei diameter of said flange region

50. A method of piocessing a substiate in a piocessing system compnsing providing one oi moie processing elements in said processing system to piotect said piocessing system fiom a process in said piocessing system, said one oi moie piocessing elements compnsing one oi more surfaces exposed to said process, wherein at least one of said one or more surfaces is alteied by a belt sanding application, disposing said substrate ui said processing system, and exposing said substrate to said process

51. The method as lecited in claim 49 wheiein said belt sandmg application comprises a pattern, said pattern comprising cross-hatching

52. The method as lecited in claim 49 wheiein said piocessing system comprises at least one of a physical vapor deposition system, a chemical vapor deposition system, and an etch system

53. The method as lecited in claim 51 wheiein said piocessing system comprises a physical vapoi deposition system, said piocessing system compnsing a processing chamber having an uppei chambei portion and a lower chamber portion, a target assembly coupled to said processing chamber, a substrate holder foi supporting said substrate coupled to said piocessing chamber, a pumping system, and a pumping duct coupling said pumping system to said processing chamber

54. The method as recited in claim 52 wherein said processing element comprises at least one of a door shield coupled to said upper chamber portion of said processing chamber, a pod shield coupled to said lowei chamber portion of said piocessing chamber, and a pumping duct shield coupled to said pumping duct

55. The method as recited in claim 49 fuithei compnsing coating at least one of said one or more suifaces on said piocessing element

56. The method as lecited in claim 54 wheiein said coating compiises at least one of applying a suiface anodization, a spray coating, and a plasma electrolytic oxidation coating

57. The method as lecited in claim 49 wheiein said belt sanding application comprises applying a 36 grit abtasive suiface

58. An improved piocessing element for use in a processing system comprising a processing chamber having an upper chamber portion and a lower chamber portion, a target assembly coupled to said processing chamber, a substiate holdei foi supporting a substrate coupled to said processing chambei, a pumping system, and a pumping duct coupling said pumping system to said piocessing chamber, the improved piocessing element comprising one or moie suifaces exposed to a piocess in said processing system duiing said piocess, wherein at least one of said one or more surfaces is alteied by a belt sanding application

59. The element as recited in claim 57 wheiein said belt sanding application comprises a pattern, said pattern compnsing cross-hatching

60. The element as recited in claim 57 wheiein said processing system fuithei comprises at least one of a physical vapor deposition system, a chemical vapor deposition system, and an etch system

61. The element as recited in claim 57 wherein said processing element comprises at least one of a dooi shield coupled to said upper chambei portion of said processing chamber, a pod shield coupled to said lower chamber portion of said processing chamber, and a pumping duct shield coupled to said pumping duct

62. The element as recited in claim 57 fuithei comprising a coating on at least one of said one or more suifaces on said processing element

63. The element as lecited in claim 61 wheiein said coating comprises at least one of applying a suiface anodization, a spiay coating, and a plasma electrolytic oxidation coating

64. The element as recited in claim 57 wherein said belt sanding application comprises applying a 36 grit abrasive surface

65. The element as lecited in claim 57 wherein said element comprises a ring having a lip region and a flange region coupled to said lip region, and element is fabricated from spun metal.