WO2004088756A1 - Transistor a effet de champ - Google Patents

Transistor a effet de champ Download PDF

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Publication number
WO2004088756A1
WO2004088756A1 PCT/RU2003/000383 RU0300383W WO2004088756A1 WO 2004088756 A1 WO2004088756 A1 WO 2004088756A1 RU 0300383 W RU0300383 W RU 0300383W WO 2004088756 A1 WO2004088756 A1 WO 2004088756A1
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WO
WIPO (PCT)
Prior art keywords
layer
channel
boundary
border
barrier
Prior art date
Application number
PCT/RU2003/000383
Other languages
English (en)
Russian (ru)
Inventor
Viktor Petrovich Chaly
Yury Vasilievich Pogorelsky
Alexei Nikolaevich Alexeev
Dmitry Mikhailovich Krasovitsky
Igor Albertovich Sokolov
Original Assignee
Viktor Petrovich Chaly
Yury Vasilievich Pogorelsky
Alexei Nikolaevich Alexeev
Krasovitsky Dmitry Mikhailovic
Igor Albertovich Sokolov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Viktor Petrovich Chaly, Yury Vasilievich Pogorelsky, Alexei Nikolaevich Alexeev, Krasovitsky Dmitry Mikhailovic, Igor Albertovich Sokolov filed Critical Viktor Petrovich Chaly
Priority to AU2003271248A priority Critical patent/AU2003271248A1/en
Priority to DE10394190T priority patent/DE10394190B4/de
Publication of WO2004088756A1 publication Critical patent/WO2004088756A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Definitions

  • the invention is available only for use with consumer devices and may be used in electronic devices, microwave devices, etc.
  • the dielectric contact is on the barrier and is used to protect the receiver against external barriers to external.
  • Discharges containing the terms 0 ⁇ 0 and 8c 20 0z show significantly less degradation than similar devices without protective layers.
  • a cost-effective solution is that the result of protective layers is that the level of degradation is sufficiently high. After loading (voltage exceeded - starting at 8 ⁇ , voltage at shutter 1 ⁇ ) after 13 hours, the operating speed exceeded 90% of the output Initial protection and protection of structures with ⁇ 0 and 80% of the initial protection and protection 8s 2 0 3 .
  • the resulting two-sided electric gas was developed in this case due to the effect associated with the existence of a charge on the territory of the country. This effect is observed in nitrates ⁇ and is not characteristic for users of ⁇ 3 ⁇ 5 . For the most part, the charges are not stable at all times, especially in the operating mode of the appliance, and the double electric gas treatment
  • the basic solution of the present invention is to solve the problem of increasing the degraded speed of the appliance.
  • 25 OPERATING CONSIDERATION INCLUDES SERVICE an emissive word from ⁇ 1 in the Bible. at ⁇ , the channel layer and the barrier layer, made from ⁇ 1 ⁇ ⁇ réelle ⁇ _ ⁇ ⁇ , the channel layer is made from ⁇ 1 ⁇ ⁇ réelle ⁇ _ ⁇ ⁇ , where 0.12> ⁇ > 0.03, this is from the other side 1 > ⁇ + 0.1, on the border of the channel and the barrier layers ⁇ + ⁇ , and the thickness of the channel layer is in the range of 3 to 20 nm, except for the fact that The best way to do this is from two cases, but lower, adjacent to the last one, has a value on the page with it at a value of 0.5 to 0.7, only 1. , the upper case is on the border with the lower value at 0.7 to 1, and the border with the channel layer decreases
  • the construction site for the optional transport includes a protective layer, located on the outside of the bar, made from South Africa.
  • the 15th layer must contain at least 0.03 molar share ⁇ 1, which ensures a high degradation rate of the device.
  • the isolating word is made from two cases; lower adjacent to the last, 5 years later may be located on the border with
  • the value of y in the range is 0.5 to 0.7, and on the border with the last 6, the value of y is 0.7 to 1;
  • the upper boundary is on the border with the lower value at 0.7 to 1, and the rate with the channel layer at ⁇ 0.4 is also greatly reduced.
  • an alloying ⁇ -layer of battery or acid may be performed in the barium and / or emitting layers.
  • the single doping ⁇ -layer 7 was performed in the upper isolating after-layer, and the other
  • the thickness of the upper layer is equal to 0.4 ⁇ m; in the upper case, the doping ⁇ -layer of the 7th extreme is made with the highest concentration of 10 cm " ⁇ ; the ⁇ -layer of 7 is located at a depth of 5 nm, the last layer is the same as the last one;
  • the power supplies were turned off in a degraded mode in a stand-by mode, this means that there is a voltage of at least 220V. 8 changes in the value of a change
  • the entire structure, including the protective layer, was, in general, cultivated in a single process of molecular beam epitaxy; Contact to the database is completed
  • the preliminary located areas of the surface are located at a depth of 10 + 2 nm;
  • the invention may have been sold in a factory, in a consumer environment, and in the use of extracted materials, mining, and mining. This is in accordance with the claimed invention, the intent of which is the intended use ( ⁇ ).

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'invention a trait à des dispositifs semi-conducteurs, et peut être utilisée dans des appareils radioélectriques, hyperfréquences, etc. Le transistor à effet de champ selon l'invention possède une structure à base de nitrures de Ga et d'Al, et comprend successivement un substrat, une couche isolante constituée de AlyGa1-yN, une couche de liaison et une couche barrière constituée de AlzGa1-zN. La couche de liaison est constituée de AlxGa1-xN, où 0,12>x>0,03, où 1≥y≥x+0,1 au niveau de la limite entre les couches de liaison et isolante, où 1≥z≥x+0,1 au niveau de la limite entre les couches de liaison et barrière, la couche de liaison possédant une épaisseur comprise entre 3 et 20 nm, et x, y et z représentant les fractions molaires de Al d'un composé de AlGaN. La couche isolante peut se composer de deux sous-couches. La sous-couche inférieure, adjacente au substrat, possède, au niveau de la limite avec ce dernier, une valeur y comprise entre 0,5 et 0,7, et, au niveau de la limite avec la sous-couche supérieure, une valeur y comprise entre 0,7 et 1. La sous-couche supérieure possède, au niveau de la limite avec la sous-couche inférieure, une valeur y comprise entre 0,7 et 1, ladite valeur diminuant régulièrement vers la limite avec la couche de liaison jusqu'à ce que y≤0,4. Les couches barrière et/ou isolante peuvent contenir une couche δ dopée de silicium ou d'oxygène. La structure du transistor à effet de champ peut également comporter une couche protectrice, disposée par-dessus la couche barrière et constituée de AlGaON.
PCT/RU2003/000383 2003-04-01 2003-08-15 Transistor a effet de champ WO2004088756A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003271248A AU2003271248A1 (en) 2003-04-01 2003-08-15 Field transistor
DE10394190T DE10394190B4 (de) 2003-04-01 2003-08-15 Feldeffekt-Transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2003109501 2003-04-01
RU2003109501/28A RU2222845C1 (ru) 2003-04-01 2003-04-01 Полевой транзистор

Publications (1)

Publication Number Publication Date
WO2004088756A1 true WO2004088756A1 (fr) 2004-10-14

Family

ID=32091949

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2003/000383 WO2004088756A1 (fr) 2003-04-01 2003-08-15 Transistor a effet de champ

Country Status (4)

Country Link
AU (1) AU2003271248A1 (fr)
DE (1) DE10394190B4 (fr)
RU (1) RU2222845C1 (fr)
WO (1) WO2004088756A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2316076C1 (ru) 2006-11-14 2008-01-27 Закрытое Акционерное Общество "Светлана-Рост" Полупроводниковая гетероструктура полевого транзистора
RU2534002C1 (ru) * 2013-06-18 2014-11-27 федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) Высоковольтный нитрид-галлиевый транзистор с высокой подвижностью электронов

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064082A (en) * 1997-05-30 2000-05-16 Sony Corporation Heterojunction field effect transistor
RU2186447C2 (ru) * 1997-11-28 2002-07-27 Котелянский Иосиф Моисеевич Полупроводниковый прибор
US20020167023A1 (en) * 2001-05-11 2002-11-14 Cree Lighting Company And Regents Of The University Of California Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6486502B1 (en) * 1998-06-12 2002-11-26 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064082A (en) * 1997-05-30 2000-05-16 Sony Corporation Heterojunction field effect transistor
RU2186447C2 (ru) * 1997-11-28 2002-07-27 Котелянский Иосиф Моисеевич Полупроводниковый прибор
US6486502B1 (en) * 1998-06-12 2002-11-26 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US20020167023A1 (en) * 2001-05-11 2002-11-14 Cree Lighting Company And Regents Of The University Of California Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Also Published As

Publication number Publication date
DE10394190T5 (de) 2006-04-27
DE10394190B4 (de) 2010-02-11
RU2222845C1 (ru) 2004-01-27
AU2003271248A1 (en) 2004-10-25

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