AU2003271248A1 - Field transistor - Google Patents
Field transistorInfo
- Publication number
- AU2003271248A1 AU2003271248A1 AU2003271248A AU2003271248A AU2003271248A1 AU 2003271248 A1 AU2003271248 A1 AU 2003271248A1 AU 2003271248 A AU2003271248 A AU 2003271248A AU 2003271248 A AU2003271248 A AU 2003271248A AU 2003271248 A1 AU2003271248 A1 AU 2003271248A1
- Authority
- AU
- Australia
- Prior art keywords
- field transistor
- transistor
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
- H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2003109501 | 2003-04-01 | ||
RU2003109501/28A RU2222845C1 (en) | 2003-04-01 | 2003-04-01 | Field-effect transistor |
PCT/RU2003/000383 WO2004088756A1 (en) | 2003-04-01 | 2003-08-15 | Field transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003271248A1 true AU2003271248A1 (en) | 2004-10-25 |
Family
ID=32091949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003271248A Abandoned AU2003271248A1 (en) | 2003-04-01 | 2003-08-15 | Field transistor |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU2003271248A1 (en) |
DE (1) | DE10394190B4 (en) |
RU (1) | RU2222845C1 (en) |
WO (1) | WO2004088756A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2316076C1 (en) | 2006-11-14 | 2008-01-27 | Закрытое Акционерное Общество "Светлана-Рост" | Semiconductor heterostructure of field-effect transistor |
RU2534002C1 (en) * | 2013-06-18 | 2014-11-27 | федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский ядерный университет МИФИ" (НИЯУ МИФИ) | High-voltage gallium nitride high-electron mobility transistor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335637A (en) * | 1997-05-30 | 1998-12-18 | Sony Corp | Hetero-junction field effect transistor |
RU2186447C2 (en) * | 1997-11-28 | 2002-07-27 | Котелянский Иосиф Моисеевич | Semiconductor device |
US6316793B1 (en) * | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
-
2003
- 2003-04-01 RU RU2003109501/28A patent/RU2222845C1/en active
- 2003-08-15 DE DE10394190T patent/DE10394190B4/en not_active Expired - Fee Related
- 2003-08-15 AU AU2003271248A patent/AU2003271248A1/en not_active Abandoned
- 2003-08-15 WO PCT/RU2003/000383 patent/WO2004088756A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2004088756A1 (en) | 2004-10-14 |
RU2222845C1 (en) | 2004-01-27 |
DE10394190T5 (en) | 2006-04-27 |
DE10394190B4 (en) | 2010-02-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |