WO2004079294A2 - Profilage de structures a surface complexe utilisant l'interferometrie a balayage - Google Patents

Profilage de structures a surface complexe utilisant l'interferometrie a balayage Download PDF

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Publication number
WO2004079294A2
WO2004079294A2 PCT/US2004/007014 US2004007014W WO2004079294A2 WO 2004079294 A2 WO2004079294 A2 WO 2004079294A2 US 2004007014 W US2004007014 W US 2004007014W WO 2004079294 A2 WO2004079294 A2 WO 2004079294A2
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Prior art keywords
test object
scanning interferometry
information
interferometry signal
signal
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PCT/US2004/007014
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English (en)
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WO2004079294A3 (fr
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Peter J. De Groot
Robert Stoner
Xavier Colonna De Lega
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Zygo Corporation
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Priority to JP2006506943A priority Critical patent/JP4791354B2/ja
Priority to KR1020057016623A priority patent/KR101169293B1/ko
Priority to EP04718562.4A priority patent/EP1604169B1/fr
Priority to CN2004800123237A priority patent/CN1784588B/zh
Publication of WO2004079294A2 publication Critical patent/WO2004079294A2/fr
Publication of WO2004079294A3 publication Critical patent/WO2004079294A3/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/0201—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal phase variation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02055—Reduction or prevention of errors; Testing; Calibration
    • G01B9/02056—Passive reduction of errors
    • G01B9/02057—Passive reduction of errors by using common path configuration, i.e. reference and object path almost entirely overlapping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02083—Interferometers characterised by particular signal processing and presentation
    • G01B9/02084—Processing in the Fourier or frequency domain when not imaged in the frequency domain
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02083—Interferometers characterised by particular signal processing and presentation
    • G01B9/02088—Matching signals with a database
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70—Using polarization in the interferometer

Definitions

  • the invention relates to using scanning interferometry to measure surface topography and/or other characteristics of objects having complex surface structures, such as thin film(s), discrete structures of dissimilar materials, or discrete structures that are underresolved by the optical resolution of an interference microscope. Such measurements are relevant to the characterization of flat panel display components, semiconductor wafer metrology, and in- situ thin film and dissimilar materials analysis.
  • Interferometric techniques are commonly used to measure the profile of a surface of an object. To do so, an interferometer combines a measurement wavefront reflected from the surface of interest with a reference wavefront reflected from a reference surface to produce an interferogram. Fringes in the interferogram are indicative of spatial variations between the surface of interest and the reference surface.
  • a scanning interferometer scans the optical path length difference (OPD) between the reference and measurement legs of the interferometer over a range comparable to, or larger than, the coherence length of the interfering wavefironts, to produce a scanning interferometry signal for each camera pixel used to measure the interferogram.
  • a limited coherence length can be produced, for example, by using a white-light source, which is referred to as scanning white light interferometry (SWLI).
  • SWLI scanning white light interferometry
  • a typical scanning white light interferometry (SWLI) signal is a few fringes localized near the zero optical path difference (OPD) position.
  • the signal is typically characterized by a sinusoidal carrier modulation (the "fringes”) with bell- shaped fringe-contrast envelope.
  • the conventional idea underlying SWLI metrology is to make use of the localization of the fringes to measure surface profiles.
  • SWLI processing techniques include two principle trends.
  • the first approach is to locate the peak or center of the envelope, assuming that this position corresponds to the zero optical path difference (OPD) of a two-beam interferometer for which one beam reflects from the object surface.
  • the second approach is to transform the signal into the frequency domain and calculate the rate of change of phase with wavelength, assuming that an essentially linear slope is directly proportional to object position. See, for example, U.S. Patent No. 5,398,113 to Peter de Groot. This latter approach is referred to as Frequency Domain Analysis (FDA).
  • FDA Frequency Domain Analysis
  • some embodiments of the invention assume that a change in surface height translates the scanning interferometry signal with respect to a reference scan position, but otherwise preserves the shape of the scanning interferometry signal.
  • the shape of the scanning interferometry signal is especially useful in characterizing complex surface structure because it is independent of surface height.
  • a change in surface height introduces a linear term in the frequency domain phase profile, even though the frequency domain profile itself may not be linear.
  • the change in surface height leaves the frequency domain amplitude profile unchanged. Therefore, the frequency domain amplitude profile is especially useful in characterizing complex surface structure.
  • surface height can be efficiently determined. For example, a cross-correlation between the scanning interferometry signal and a model signal having the shape corresponding to the complex surface structure can produce a peak at a scan coordinate corresponding to the surface height. Similarly, in the frequency domain, a phase contribution resulting from the complex surface structure can be subtracted from the frequency domain phase profile and the surface height can be extracted using a conventional FDA analysis.
  • complex surface structure examples include: simple thin films (in which case, for example, the variable parameter of interest may be the film thickness, the refractive index of the film, the refractive index of the substrate, or some combination thereof); multilayer thin films; sharp edges and surface features that diffract or otherwise generate complex interference effects; unresolved surface roughness; unresolved surface features, for example, a sub-wavelength width groove on an otherwise smooth surface; dissimilar materials (for example, the surface may comprise a combination of thin film and a solid metal, in which case the library may include both surface structure types and automatically identify the film or the solid metal by a match to the corresponding frequency-domain spectra); surface structure that give rise to optical activity such as fluorescence; spectroscopic properties of the surface, such as color and wavelength-dependent reflectivity; polarization-dependent properties of the surface; and deflections, vibrations or motions of the surface or deformable surface features that result in perturbations of the interference signal.
  • simple thin films in which case, for example, the variable parameter of interest
  • the limited coherence length of the light used to generate the scanning interferometry signal is based on a white light source, or more generally, a broadband light source.
  • the light source may be monocliromatic, and the limited coherence length can result from using a high numerical aperture (NA) for directing light to, and/or receiving light from, the test object.
  • NA numerical aperture
  • the high NA causes light rays to contact the test surface over a range of angles, and generates different spatial frequency components in the recorded signal as the OPD is scanned.
  • the limited coherence can result from a combination of both effects.
  • the origin of the limited coherence length is also a physical basis for there being information in the scanning interferometry signal.
  • the scanning interferometry signal contains information about complex surface structure because it is produced by light rays contacting the test surface with many different wavelengths and/or at many different angles.
  • information derivable from a scanning interferometry signal for a first surface location of a test object is compared to information corresponding to multiple models of the test object, where the multiple models are parametrized by a series of characteristics for the test object.
  • the test object can be modeled as a thin film and the series of characteristics can be a series of values for the thickness of the thin film.
  • the information being compared might include, for example, information about the frequency domain phase profile, it might also include information about the shape of the scanning interferometry data and/or information about the frequency domain amplitude profile.
  • the multiple models can all correspond to a fixed surface height for the test object at the first surface location.
  • the comparison itself can be based on calculating a merit function indicative of the similarity between the information from the actual scanning interferometry signal and the infoimation from each of the models.
  • the merit function can be indicative of fit between the information derivable from the scanning interferometry data and function parametrized by the series of characteristics.
  • the series of characteristics corresponds to a characteristic of the test object at second location different from the first location, including for example, diffractive surface structures that contribute to the interface signal for the first surface locations.
  • the complex surface structure may correspond to surface height features spaced from the first surface location corresponding to the scanning interferometry signal.
  • the methods and techniques described herein can be used for in-process metrology measurements of semiconductor chips. For example, scanning interferometry measurements can be used for non-contact surface topography measurements semiconductor wafers during chemical mechanical polishing (CMP) of a dielectric layer on the wafer.
  • CMP chemical mechanical polishing
  • CMP is used to create a smooth surface for the dielectric layer, suitable for precision optical lithography.
  • the process conditions for CMP e.g., pad pressure, polishing slurry composition, etc.
  • the process conditions for CMP can be adjusted to keep surface non-uniformities within acceptable limits.
  • the invention features a method including: comparing information derivable from a scanning interferometry signal for a first surface location of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parametrized by a series of characteristics for the test object.
  • Embodiments of the invention may incude any of the following features.
  • the method may further include determining an accurate characteristic for the test object based on the comparison.
  • the method may further include determining a relative surface height for the first surface location based on the comparison. Furthermore, the dete ⁇ nining of the relative surface height may include determining which model corresponds to an accurate one of the characteristic for the test object based on the comparison, and using the model corresponding to the accurate characteristic to calculate the relative surface height.
  • the using of the model corresponding to the accurate characteristic may include compensating data from the scanning interferometry signal to reduce contributions arising from the accurate characteristic.
  • the compensating of the data may include removing a phase contribution arising from the accurate characteristic from a phase component of a transform of the scanning interferometry signal for the test object, and the using of the model corresponding to the accurate characteristic may further include calculating the relative surface height from the phase component of the transform after the phase contribution arising from the accurate characteristic has been removed.
  • using the model corresponding to the accurate characteristic to calculate the relative surface height may include determining a position of a peak in a correlation function used to compare the information for the test object to the information for the model corresponding to the accurate characteristic.
  • the method may further include comparing information derivable from the scanning interferometry signal for additional surface locations to the information corresponding to the multiple models. Also, the method may further include determining a surface height profile for the test obj ect based on the comparisons.
  • the comparing may include calculating one or more merit functions indicative of a similarity between the information derivable from the scanning interferometry signal and the information corresponding to each of the models.
  • the comparing may include fitting the information derivable from the scanning interferometry signal to an expression for the information corresponding to the models.
  • the information corresponding to the multiple models may include information about at least one amplitude component of a transform (e.g., a Fourier transform) of a scanning interferometry signal corresponding to each of the models of the test object.
  • the information derivable from the scanning interferometry signal includes information about at least one amplitude component of a transform of the scanning interferometry signal for the test object.
  • the comparing may include comparing a relative strength of the at least one amplitude component for the test object to the relative strength of the at least one amplitude component for each of the models.
  • the information corresponding to the multiple models may be a function of a coordinate for the transform.
  • the information corresponding to the multiple models may include an amplitude profile of the transform for each of the models.
  • the comparing may include comparing an amplitude profile of a transform of the scanning interferometry signal for the test object to each of the amplitude profiles for the models.
  • the comparing may also include comparing information in a phase profile of the transform of the scanning interferometry signal for the test object to information in a phase profilde of the transform for each of the models.
  • the information in the phase profiles may include information about nonlinearity of the phase profile with respect to the transform coordinate and/or information about a phase gap value.
  • the information derivable from the scanning interferometry signal and which is being compared may be a number.
  • the information derivable from the scanning interferometry signal and which is being compared may be a function.
  • it may be a function of scan position or a function of spatial frequency.
  • the information for the test object may be derived from a transform (e.g., a Fourier transform) of the scanning interferometry signal for the test object into a spatial frequency domain.
  • the information for the test object may include information about an amplitude profile of the transform and/or a phase profile of the transform.
  • the information for the test object may relate to a shape of the scanning interferometry signal for the test object at the first location.
  • the information for the test object may relate to a fringe contrast magnitude in the shape of the scanning interferometry signal. It may also relate to a relative spacings between zero-crossings in the shape of the scanning interferometry signal. It may also be expressed as a function of scan position, wherein the function is derived from the shape of the scanning interferometry signal.
  • the comparing may include calculating a correlation function (e.g., a complex correlation function) between the information for the test object and the information for each of the models.
  • the comparing may further include determining one or more peak values in each of the correlation functions.
  • the method may then further include determining an accurate characteristic for the test object based on the parameterization of the model corresponding to the largest peak value.
  • the method may further include determining a relative surface height for the test object at the first surface location based on a coordinate for at least one of the peak values in the correlation functions.
  • the multiple models may correspond to a fixed surface height for the test object at the first location.
  • the series of characteristics may include a series of values for at least one physical parameter of the test object.
  • the test object may include a thin film layer having a thickness, and the physical parameter may be the thickness of the thin film at the first location.
  • the series of characteristics may include a series of characteristics of the test object at a second surface location different from the first surface location.
  • the test object may include structure at the second surface location that diffracts light to contribute to the scanning interferometry signal for the first surface location.
  • the series of characteristics at the second surface location may include permutations of a magnitude for a step height at the second location and a position for the second location.
  • the series of characteristics at the second surface location may include permutations of a modulation depth for a grating and an offset position of the grating, wherein the grating extends over the second location.
  • the series of characteristics maybe a series of surface materials for the test object.
  • the series of characteristics may be a series of surface layer configurations for the test object.
  • the scanning interferometry signal may be produced by a scanning interferometry system, and the comparing may include accounting for systematic contributions to the scanning interferometry signal arising from the scanning interferometry system.
  • the systematic contributions may include information about a dispersion in a phase change on reflection from components of the scanning interferometry system.
  • the method may also include comparing information derivable from the scanning interferometry signal for additional surface locations to the information corresponding to the multiple models, in which case, the systematic contributions may be resolved for multiple ones of the surface locations.
  • the method may further include calibrating the systematic contributions of the scanning interferometry system using another test object having known properties.
  • the scanning interferometry signal may be produced by imaging test light emerging from the test object to interfere with reference light on a detector, and varying an optical path length difference from a common source to the detector between interfering portions of the test and reference light, wherein the test and reference light are derived from the common source (e.g., a spatially extended source), and wherein the scanning interferometry signal corresponds to an interference intensity measured by the detector as the optical path length difference is varied.
  • the common source e.g., a spatially extended source
  • the test and reference light may have a spectral bandwidth greater than about 5% of a central frequency for the test and reference light.
  • the common source may have a spectral coherence length, and the optical path length difference is varied over a range larger than the spectral coherence length to produce the scanning interferometry signal.
  • Optics used to direct test light onto the test object and image it to the detector may define a numerical aperture for the test light greater than about 0.8.
  • the method may further include producing the scanning interferometry signal.
  • the invention features an apparatus including: a computer readable medium having a program that causes a processor in a computer to compare information derivable from a scanning interferometry signal for a first surface location of a test object to information corresponding to multiple models for the test object, wherein the multiple models are parametrized by a series of characteristics for the test object.
  • the apparatus may include any of the features described above in connection with the method.
  • the invention features an apparatus including: a scanning interferometry system configured to produce a scanning interferometry signal; and an electronic processor coupled to the scanning interferometry system to receive the scanning interferometry signal and programmed to compare information derivable from a scanning interferometry signal for a first surface location of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parametrized by a series of characteristics for the test object.
  • the apparatus may include any of the features described above in connection with the method.
  • the invention features a method including: chemically mechanically polishing a test object; collecting scanning interferometry data for a surface topography of the test object; and adjusting process conditions for the chemically mechanically polishing of the test object based on information derived from the scanning interferometry data.
  • the process conditions maybe pad pressure and/or polishing slurry composition.
  • adjusting the process conditions based on the information derived from the scanning interferometry data may include comparing information derivable from the scanning interferometry signal for at least a first surface location of a test obj ect to information corresponding to multiple models of the test object, wherein the multiple models are parametrized by a series of characteristics for the test object.
  • Analysis of the scanning interferometry signal may further include any of the features described above with the first-mentioned method.
  • FIG. 1 is a flow chart of an interferometry method.
  • FIG. 2 is a flow chart showing a variation of the interferometry method of FIG. 1.
  • FIG. 3 is a schematic drawing of a Linnik-type scanning interferometer.
  • FIG. 4 is a schematic drawing of a Mirau-type scanning interferometer.
  • FIG. 5 is a diagram showing illumination of the test sample through an objective lens.
  • FIG. 6 shows theoretical Fourier amplitude spectra for scanning interferometry data in two limits.
  • FIG. 7 shows two surface types, with and without a thin film
  • FIG. 8 shows the merit function search procedure for simulation of a SiO 2 film on a Si substrate with the thin film thickness being 0.
  • FIG. 8 shows the merit function search procedure for simulation of a SiO 2 film on a Si substrate with the thin film thickness being 0.
  • FIG. 9 shows the merit function search procedure for simulation of a SiO 2 film on a
  • FIG. 10 shows the merit function search procedure for simulation of a SiO 2 film on a Si substrate with the thin film thickness being 100 nm.
  • FIG. 11 shows the merit function search procedure for simulation of a SiO 2 film on a Si substrate with the thin film thickness being 300 nm.
  • FIG. 12 shows the merit function search procedure for simulation of a SiO 2 film on a
  • Si substrate with the thin film thickness being 600 nm.
  • FIG. 13 shows the merit function search procedure for simulation of a SiO 2 film on a Si substrate with the thin film thickness being 1200 nm.
  • FIG. 14 shows the surface and substrate profiles determined for a simulation of a SiO 2 on Si thin film in which the film thickness varies uniformly from 0 to 1500 nm in 10- nm increments per pixel, with the top surface always at zero.
  • FIG. 15 shows the surface and substrate profiles determined for a simulation identical to that in FIG. 14 except that random noise has been added (2 -bits rms out of an average 128 intensity bits).
  • FIG. 16 shows surface height profiles determined using conventional FDA analysis
  • FIG. 16a and a library search method described herein (FIG. 16b) for a 2400 line per mm grating having an actual peak-to-valley modulation depth of 120 nm.
  • FIG. 17 shows distortions caused by an under-resolved step height in a scanning interference signals for pixels corresponding to various surface locations near the step height.
  • FIG. 18 shows nonlinear distortions in the frequency domain phase spectra for pixels corresponding to surface locations to the left (FIG. 18a) and the right (FIG. 18b) of the under-resolved step height in FIG. 17.
  • FIG. 19 shows surface height profiles determined using conventional FDA analysis (FIG. 19a) and a library search method described herein (FIG. lb) for an under-resolved step height.
  • FIG. 20 shows an actual scanning interferometry signal of a base Si substrate without a thin film.
  • FIGS. 21 and 22 show interference template patterns for a bare Si substrate and a thin film structure with 1 micron of SiO2 on Si, respectively.
  • FIGS. 23 and 24 show the merit function as a function of scan positions for template functions in FIGS. 21 and 22, respectively.
  • Like reference numerals in different drawings refer to common elements.
  • FIG. 1 shows a flow chart that generally describes one embodiment of the invention in which the analysis of the scanning interferometry data is performed in the spatial frequency domain.
  • an interferometer is used to mechanically or electro-optically scan the optical path difference (OPD) between a reference and measurement path, the measurement path being directed to an object surface.
  • OPD optical path difference
  • the OPD at the beginning of the scan is a function of the local height of the object surface.
  • a computer records an interference intensity signal during the OPD scan for each of multiple camera pixels corresponding to different surface locations of the object surface.
  • the computer performs a transform (e.g., a Fourier Transform) to generate a frequency-domain spectrum of the signal.
  • the spectrum contains both magnitude and phase information as a function of the spatial frequency of the signal in the scanning dimension.
  • FDA frequency domain analysis
  • the library may use information from prior supplemental measurements of the object surface provided by other instruments, for example an ellipsometer, and any other input from a user regarding known properties of the object surface, so as to reduce the number of unknown surface parameters.
  • Other instruments for example an ellipsometer
  • Any of these techniques for library creation, theoretical modeling, empirical data, or theory augmented by supplemental measurements, may be expanded by inte ⁇ olation to generate intermediate values, either as part of the library creation or in real time during a library search.
  • the experimental data is compared to the prediction library by means of a library search that provides surface structure parameters.
  • the library for a single surface type e.g. SiO on Si
  • the library for a single surface type would range over many possible film thicknesses with the top surface height always equal to zero.
  • Another example case would be surface roughness, for which the adjustable parameter may be roughness depth and/or spatial frequency.
  • the library search leads to a match to those characteristics of the FDA spectra that are independent of surface height, for example, the average value of the magnitude spectrum, which is related to the overall reflectivity of the surface, or the variation in magnitude as a function of spatial frequency, which in a monochromatic high-NA system relates to the scattering angle of the reflected light.
  • the analysis may also include a system characterization, which includes, e.g. measuring one or more reference artifacts having a known surface structure and surface topography, so as to determine parameters such as system wavefront error, dispersion, and efficiency that may not be included in the theoretical model.
  • a system characterization includes, e.g. measuring one or more reference artifacts having a known surface structure and surface topography, so as to determine parameters such as system wavefront error, dispersion, and efficiency that may not be included in the theoretical model.
  • the analysis may include an overall calibration, which includes e.g., measuring one or more reference artifacts to determine the correlation between measured surface parameters, such as film thickness as determined by the library search, and the values for these parameters as determined independently, e.g. by ellipsometric analysis.
  • the computer Based on the comparison of the experimental data to the prediction library, the computer identifies the surface model corresponding to the best match. It may then displays or transmits surface parameter results numerically or graphically to the user or to a host system for further analysis or for data storage. Using the surface parameter results, the computer may then determine surface height information in addition to characteristics identified by the library search. In some embodiments, the computer generates a compensated phase spectrum, for example by subtracting the corresponding theoretical phase spectrum directly from the experimental phase spectrum. The computer then determines the local surface height for one or more surface points by analysis of the compensated phase as a function of spatial frequency, for example by analysis of the coefficients generated by a linear fit. Thereafter, the computer generates a complete three-dimensional image constructed from the height data and corresponding image plane coordinates, together with graphical or numerical display of the surface characteristics as determined by the library search.
  • the library search and data collection can be performed iteratively to further improve the results.
  • the library search can be refined on a pixel-by-pixel or regional basis, by the creation of refined libraries relevant to the local surface type. For example, if it is found that the surface has a thin film of approximately 1 micron during a preliminary library search, then the computer may generate a fine-grain library of example values close to 1 micron to further refine the search.
  • the user may only be interested in the surface characteristics modeled by the prediction library, but not surface height, in which case the steps for determining surface height are not performed.
  • the user may only be interested in surface height, but not the surface characteristics modeled in the prediction library, in which case the computer uses the comparison between the experimental data and the prediction library to compensate the experimental data for the contributions of the surface characteristics, so that the surface height is more accurately determined, but need not explicitly determine the surface characteristics or display them.
  • variable parameter of interest may be the film thickness, the refractive index of the film, the refractive index of the substrate, or some combination thereof
  • multilayer thin films sha ⁇ edges and surface features that diffract or otherwise generate complex interference effects
  • unresolved surface roughness unresolved surface features, for example, a sub-wavelength width groove on an otherwise smooth surface
  • dissimilar materials for example, the surface may comprise a combination of thin film and a solid metal, in which case the library may include both surface structure types and automatically identify the film or the solid metal by a match to the corresponding frequency- domain spectra
  • optical activity such as fluorescence; spectroscopic properties of the surface, such as color and wavelength-dependent reflectivity; polarization-dependent properties of the surface; deflections, vibrations or motions of the surface or deformable surface features that result in perturbations of the interference signal; and data distortions related to the data acquisition procedure, e
  • the interferometer may include any of the following features: a spectrally narrowband light source with a high numerical aperture (NA) objective; a spectrally broad band light source; a combination of a high NA objective and a spectrally broadband source; an interferometric microscope objectives, including oil/water immersion and solid immersion types, in e.g. Michelson, Mirau or Linnik geometries; a sequence of measurements at multiple wavelengths; unpolarized light; and polarized light, including linear, circular, or structured.
  • structured polarized light may involve, for example, a polarization mask, generating different polarizations for different segments of the illumination or imaging pupils, so as to reveal polarization-dependent optical effects attributable to surface characteristics.
  • the interferometer may also include the overall system calibration, described above.
  • the library search may be based on any of the following: a product of, or a difference between, magnitude and/or phase data in the frequency spectrum, including, e.g., the product of, or difference between, the average magnitude and the average phase, the average magnitude itself, and the average phase itself; the slope, width and/or height of the magnitude spectrum; interference contrast; data in the frequency spectrum at DC or zero spatial frequency; nonlinearity or shape of the magnitude spectrum; the zero-frequency intercept of the phase; nonlinearity or shape of the phase spectrum; and any combination of these criteria.
  • magnitude and amplitude are used interchangeably.
  • FIG. 2 shows a flow chart that generally describes another embodiment for the analysis of scanning interferometry data.
  • the analysis is similar to that described for FIG. 1 except that comparison between the experimental data and the prediction library is based on information in scan coordinate domain.
  • the experirnentl signal may be characterized by a quasi-periodic carrier oscillation modulated in amplitude by an envelope function with respect to the scan coordinate.
  • the library search may be based on any of the following: average signal strength; the shape of the signal envelope, including e.g.
  • FIG. 3 shows a scanning interferometer of the Linnik type.
  • Illumination light 102 from a source is partially transmitted by a beam splitter 104 to define reference light 106 and partially reflected by beam splitter 104 to define measurement light 108.
  • the measurement light is focused by a measurement objective 110 onto a test sample 112 (e.g., a sample comprising a thin single- or multi-layer film of one or more dissimilar materials).
  • the reference light is focused by a reference objective 114 onto a reference mirror 116.
  • the measurement and reference objectives have common optical properties
  • Measurement light reflected (or scattered or diffracted) from the test sample 112 propagates back through measurement objective 110, is transmitted by beam splitter 104, and imaged by imaging lens 118 onto a detector 120.
  • reference light reflected from reference mirror 116 propagates back through reference objective 114, is reflected by beam splitter 104, and imaged by imaging lens 118 onto a detector 120, where it interferes with the measurement light.
  • FIG. 3 shows the measurement and reference light focusing onto particular points on the test sample and reference mirror, respectively, and subsequently interfering on a corresponding point on the detector.
  • Such light corresponds to those portions of the illumination light that propagate pe ⁇ endicular to the pupil planes for the measurement and reference legs of the interferometer.
  • Other portions of the illumination light ultimately illuminate other points on the test sample and reference mirror, which are then imaged onto corresponding points on the detector.
  • this is illustrated by the dashed lines 122, which correspond to the chief rays emerging from different points on the test sample that are imaged to corresponding points on the detector.
  • the chief rays intersect in the center of the pupil plane 124 of the measurement leg, which is the back focal plane of measurement objective 110. Light emerging from the test sample at an angle different from that of the chief rays intersect at a different location of pupil plane 124.
  • detector 120 is a multiple element (i.e., multi-pixel) camera to independently measure the interference between the measurement and reference light corresponding to different points on the test sample and reference mirror (i.e., to provide spatial resolution for the interference pattern).
  • a scanning stage 126 coupled to test sample 112 scans the position of the test sample relative to measurement objective 110, as denoted by the scan coordinate ⁇ in FIG. 3.
  • the scanning stage can be based on a piezoelectric transducer (PZT).
  • Detector 120 measures the intensity of the optical interference at one or more pixels of the detector as the relative position of the test sample is being scanned and sends that information to a computer 128 for analysis.
  • the scan varies the optical path length of the measurement light from the source to the detector differently depending on the angle of the measurement light incident on, and emerging from, the test sample.
  • the optical path difference (OPD) from the source to the detector between interfering portions of the measurement and reference light scale differently with the scan coordinate ⁇ depending on the angle of the measurement light incident on, and emerging from, the test sample.
  • the same result can be achieved by scanning the position of reference mirror 116 relative to reference objective 114 (instead of scanning test sample 112 realtive to measurement objective 110).
  • the interference signal (as a function of scan coordinate) is typically modulated by an envelope having a spatial coherence length on the order of ⁇ 2(N4) ⁇ , where ⁇ is the nominal wavelength of the illumination light and NA is the numerical aperture of the measurement and reference objectives.
  • the modulation of the interference signal provides angle-dependent information about the reflectivity of the test sample.
  • the objectives in the scanning interferometer preferably define a large numerical aperture, e.g., greater than about 0.7 (or more preferably, greater than about 0.8, or greater than about 0.9).
  • the interference signal can also be modulated by a limited temporal coherence length associated with the spectral bandwidth of the illumination source. Depending on the configuration of the interferometer, one or the other of these limited coherence length effects may dominate, or they may both contribute substantially to the overall coherence length.
  • FIG. 4 Another example of a scanning interferometer is the Mirau-type interferometer shown in FIG. 4.
  • a source module 205 provides illumination light 206 to a beam splitter 208, which directs it to a Mirau interferometric objective assembly 210. Assembly
  • 210 includes an objective lens 211, a reference flat 212 having a reflective coating on a small central portion thereof defining a reference mirror 215, and a beam splitter 213.
  • objective lens 211 focuses the illumination light towards a test sample 220 through reference flat 212.
  • Beam splitter 213 reflects a first portion of the focusing light to reference mirror 215 to define reference light 222 and transmits a second portion of the focusing light to test sample 220 to define measurement light 224. Then, beam splitter 213 recombines the measurement light reflected (or scattered) from test sample 220 with reference light reflected from reference mirror 215, and objective 211 and imaging lens 230 image the combined light to interfere on detector (e.g., a multi-pixel camera) 240.
  • detector e.g., a multi-pixel camera
  • the measurement signal(s) from the detector is sent to a computer (not shown).
  • the scanning in the embodiment of FIG. 4 involves a piezoelectric transducer (PZT) 260 coupled to Mirau interferometric objective assembly 210, which is configured to scan assembly 210 as a whole relative to test sample 220 along the optical axis of objective 211 to provide the scanning interferometry data l( ⁇ ,h) at each pixel of the camera.
  • the PZT may be coupled to the test sample rather than assembly 210 to provide the relative motion there between, as indicated by PZT actuator 270.
  • the scanning may be provided by moving one or both of reference mirror 215 and beam splitter 213 relative to objective 211 along the optical axis of objective 211.
  • Source module 205 includes a spatially extended source 201, a telescope formed by lenses 202 and 203, and a stop 204 positioned in the front focal plane of lens 202 (which coincides with the back focal plane of lens 203).
  • This arrangement images the spatially extended to source onto the pupil plane 245 of Mirau interferometric objective assembly 210, which is an example of Koehler imaging.
  • the size of stop controls the size of the illumination field on test sample 220.
  • the source module may include an arrangement in which a spatially extended source is imaged directly onto the test sample, which is known as critical imaging. Either type of source module may be used with the Linnik-type scanning interferometry system of FIG. 1.
  • the scanning interferometry system may be used to determine angle-dependent scattering or diffraction information about a test sample, i.e., for scatterometry.
  • the scanning interferometry system may be used to illuminate a test sample with test incident over only a very narrow range of incident angles (e.g., substantially normal incidence or otherwise collimated), which may then be scattered or diffracted by the test sample.
  • the light emerging from the sample is imaged to a camera to interfere with reference light as described above.
  • the spatial frequency of each component in the scanning interferometry signal will depend vary with angle of the test light emerging from the test sample.
  • a vertical scan i.e., a scan along the optical axis of an objective
  • Fourier analysis allows for a measurement of diffracted and/or scattered light as a function of emerging angle, without directly accessing or imaging the back focal plane of the objective.
  • the source module can be configured to image a point source onto the pupil plane or to otherwise decrease the degree to which the illumination light fills the numerical aperature of the measurement objective.
  • the scatterometry technique may be useful for resolving discrete structures in the sample surface, such as grating lines, edges, or general surface roughness, which may diffract and/or scatter light to higher angles.
  • the polarization state of the light in the pupil plane is random, i.e., comprised of approximately equal amounts of both s polarizations(orthogonal to the plane of incidence) and ? (orthogonal to the plane of incidence) polarizations.
  • Alternative polarizations are possible, including pure s polarization, such as may be realized by means of a radial polarizer placed in the pupil plane (e.g., in the back-focal plane of the measurement object in the case of a Linnik interferometer and in the back focal plane of the common objective in the Mirau interferometer).
  • Other possible polarizations include radial p polarization, circular polarization, and modulated (e.g.
  • optical properties of the test sample can be resolved not only with respect to their angle- or wavelength-dependence, but also with respect to their polarization dependence or with respect to a selected polarization. Such information may also be used to improve the accuracy of thin film structure characterization.
  • the scanning interferometry system may include a fixed or variable polarizer in the pupil plane.
  • the Mirau- type interferometry system includes polarization optics 280 in the pupil plane to select a desired polarization for the ligh incident on, and emerging from the test sample.
  • the polarization optics may be reconfigurable to vary the selected polarization.
  • the polarization optics may include one or more elements including polarizers, waveplates, apodization apertures, and/or modulation elements for selecting a given polarization.
  • the polarization optics may be fixed, structured or reconfigurable, for the pu ⁇ ose of generating data similar to that of an ellipsometer. For example, a first measurement with a radially-polarized pupil for s polarization, followed by a radially- polarized pupil for p polarization.
  • a first measurement with a radially-polarized pupil for s polarization followed by a radially- polarized pupil for p polarization.
  • an apodized pupil plane with linearly polarized light e.g., a slit or wedge, which can be rotated in the pupil plane so as to direct any desired linear polarization state to the object, or a reconfigurable screen such as a liquid crystal display.
  • the polarization optics may provide a variable polarization across the pupil plane (e.g., by including multiple polarizers or a spatial modulator). Thus, one can "tag" the polarization state according to spatial frequency, for example, by providing a different polarization for high angles of incidence than shallow angles.
  • the selectable polarization may be combined with a phase shift as a function of polarization.
  • the polarization optics may include a linear polarizer is positioned in the pupil plane and followed by two waveplates (e.g., eighth-wave plates) in opposing quadrants of the pupil plane. The linear polarization results in a full range of polarization angles with respect to the incident planes of the objective.
  • both radial s polarized and p polarized light are present simultaneously, but shifted in phase with respect to each other, e.g., by pi, so that the interferometer is effectively detecting the difference between these two polarization states as the fundamental signal.
  • polarization optics may be positioned elsewhere in the apparatus.
  • linear polarization can be achieved anywhere in the system.
  • the object surface has height features h which we wish to profile over an area indexed by lateral coordinates x,y.
  • the stage provides a smooth, continuous scan ⁇ either of the interference objective or, as shown, of the object itself.
  • a computer records intensity data 7 ⁇ h for each image point or camera pixel in successive camera frames.
  • a proper physical model of the optics can be very elaborate, taking into account the partial coherence of the light source, polarization mixing in the interferometer, the imaging properties of high-NA objectives, and the interaction of electric field vectors at high angles of incidence and in the presence of discontinuous surface features.
  • we simplify the model by assuming random polarization and diffuse, low-coherence extended sources.
  • Modeling the interference signal simplifies to adding up the contributions of all of the ray bundles passing tlirough the pupil plane of the objective and reflecting from the object surface at an incident angle ⁇ , as shown in FIG. 5.
  • the interference contribution for a single ray bundle through the optical system is proportional to
  • Z ⁇ A is the effective object intensity reflectivity, including e.g. the effects of the beamsplitter
  • p k is the effective reference reflectivity, including both the beamsplitter and the reference mirror.
  • the index of the ambient medium is n 0
  • the directional cosine for an incident angle ⁇ is
  • the sign convention for the phase causes an increase in surface height to correspond to a positive change in phase.
  • the phase term has a contribution ⁇ p k for the object path in the interferometer, including thin film effects from the object surface, and a contribution ⁇ character k for the reference path, including the reference mirror and other optics in the objective.
  • the total interference signal integrated over the pupil plane is proportional to
  • K is the spatial frequency, e.g. in cycles per ⁇ m.
  • the frequency-domain value q K l carries units of inverse wavenumber, e.g. ⁇ m. From this there follows a power spectrum
  • phase and coherence profiles are linearly proportional to surface height:
  • the height value Ag based on phase is the more accurate, but it has the uncertainty in the fringe order characteristic of monochromatic interferometry.
  • Eq.(15) a partial literal evaluation of the triple integration in Eq.(15) can be performed.
  • the literal analysis of Eq.(15) begins with a change of the order of integration to first evaluate the individual interference signals g p ⁇ A , over all scan positions ⁇ at fixed ⁇ and k:
  • the ⁇ function carries with it the inverse physical units of the argument, in this case, an inverse wavenumber.
  • H is the unitless Heaviside step function defined by
  • phase is linearly proportional to surface height, consistent with conventional FDA.
  • spatial frequency also has a direct correspondence to the directional cosine:
  • the next step is to translate to discrete numerical formulas, in view of a software development.
  • the Heaviside step functions H in Eq.(62) prevent unnecessary contributions to the sums.
  • the weighting factor r ⁇ k is as defined in Eq.(24).
  • FIG. 7 shows two surface types, with and without a thin film. For both cases, we define an effective amplitude reflectivity z ⁇ according to
  • ⁇ is the wavelength of the light source.
  • the subscript ⁇ will be understood to refer to the first incident directional cosine ⁇ 0 .
  • the surfaces are characterized in part by their index of refraction.
  • the index of the suriOunding medium usually air, is n 0 .
  • n 0 The index of the suriOunding medium, usually air, is n 0 .
  • these refractive indices are complex numbers characterized by a real part and an imaginary part.
  • the index of refraction of a material depends on the wavelength.
  • the dispersion in refractive index n 0 for the air is not very significant, but is important for many sample surfaces, especially metals. Over small wavelength changes near a nominal k , most materials have a nearly linear dependence on wavenumber, so that we can write
  • the refracted beam angle internal to the film is Snell's law.
  • ⁇ 0 is the angle within the medium of index n 0 incident on the top surface of the medium of index n ⁇
  • ⁇ , ⁇ ,. is the angle of refraction. It is possible for these angles to take on complex values if the indices are complex, indicating partially evanescent propagation.
  • the complex amplitude reflectivity of a boundary between two media depends on the polarization, the wavelength, the angle of incidence and the index of refraction.
  • the s- and p- polarization reflectivities of the top surface of the film in FIG. 7(b) are given by the Fresnel formulae
  • the conventional analysis breaks down.
  • the phase becomes nonlinear and the phase slope becomes sensitive to film thickness, which may be varying across the field of view. Therefore, the present analysis determines key parameters of the surface structure such as film thickness by comparing experimental data to a theoretical prediction, using our knowledge of how e.g. a thin film modulates the reflectivity of the surface.
  • the library contains example FDA spectra for surface structures, each spectrum providing a series of complex coefficients p ⁇ representing Fourier coefficients as a function of spatial frequency K. These spectra are the Fourier transforms of intensity data 7 ⁇ ⁇ acquired during a scan ⁇ of the optical path length of an interferometer.
  • the p ⁇ coefficients for the prediction library include the optical properties of the surface that can influence the appearance of the FDA spectra, with the exception of surface height.
  • Predicting the FDA spectra involves an integral representing the incoherent sum of ray bundles over a range of incident angles ⁇ and angular wavenumbers k for the source light.
  • the numerical integration can reduce to a computationally- efficient single sum over N angular wavenumbers k, weighted by a factor T K k :
  • the weighting factor is the weighting factor
  • V k is the source spectrum and U ⁇ >k is the pupil-plane light distribution.
  • T is the sum over all spatial frequencies of the weighting factor
  • Y is a normalization to be defined shortly and H is the Heaviside step function.
  • the typical prediction library for a thin film is a series of spectra p ⁇ indexed by film thickness L. The stored spectra cover only a narrow spatial frequency region of interest (ROI), usually 15 or 16 values for a 256-frame intensity data acquisition, the remainder of the values outside this ROI being zero. The limits of the ROI follow from the definition of the spatial frequency:
  • ROI spatial frequency region of interest
  • K max 2 ⁇ max /c n,ax n (
  • a typical range of spatial frequencies for a scanning interferometer based on a 100X Mirau objective and a narrow bandwidth, 500-nm light source is 2.7 ⁇ m 1 to 4.0 ⁇ m ⁇ l .
  • a dense look up table, indexed by 0.5 to 5 nm between sample spectra, can be used rather than an analytical search routine that involves recalculation using Eqs.(80)-(83) several times for each pixel.
  • the library search involves the following steps: (1) Select a predicted FDA spectrum from the library corresponding to a specific surface type, (2) calculate how closely this spectrum matches the experimental data using a merit function, then (3) repeat through several or all of the library data sets to detennine which theoretical spectrum provides the best match.
  • What we are looking for is a "signature" in the frequency domain that relates uniquely to surface characteristics such as thin films, dissimilar materials, step structures, roughness, and their interaction with the optical system of the interferometer. This comparison therefore explicitly filters away the linear rate of change of phase with spatial frequency, which is the one characteristic of the FDA spectrum that varies directly with surface topography and is therefore irrelevant to the library search.
  • connect ⁇ is a function that removes 2- ⁇ steps in the spatial frequency dependence of
  • the double prime for ⁇ " ⁇ indicates an uncertainty in the fringe order from both pixel to pixel and overall with respect to the starting point in the scan.
  • the experimental data necessarily include a slope term related to the local surface height; this is the reason for the use of the q symbol instead of the p symbol.
  • phase difference ⁇ >A is the compensated FDA phase, assuming that the trial parameters are correct.
  • a good match of theory to experiment yields a phase ⁇ h that in principle is a simple linear function of spatial frequency K with an intercept of zero (i.e., zero phase gap).
  • the second is the residual nonlinearity with respect to wavenumber after a linear fit.
  • Corresponding merit functions are, for example,
  • ⁇ ⁇ is the slope of the (magnitude weighted) linear fit to the compensated phase ⁇ h .
  • the round ( ) function in Eq.(91) limits the phase gap A" to the range ⁇ .
  • ⁇ p is most closely related to the overall reflectivity of the object surface, independent of spatial- frequency dependence, whereas ⁇ P;r ⁇ n expresses how well the theoretical and experimental magnitude plots match in shape.
  • the magnitude merit functions ⁇ p and/or ⁇ Pnon are in addition to or even in place of the phase merits ⁇ ⁇ and/or ⁇ ⁇ non .
  • a general library search merit function is therefore
  • FIGS. 8-13 illustrate the merit-function search procedure for six SiO 2 on Si film thicknesses: 0, 50, 100, 300, 600, and 1200 mn, respectively.
  • a single library for all examples encompasses the range from 0 to 1500 nm in 2-nm intervals.
  • the data are simulations, free of noise.
  • the scan step is 40 nm
  • the source wavelength is 498 nm
  • the source gaussian FWHM is 30 nm (quasi- monochromatic) .
  • FDA processing proceeds in the usual way, using however the corrected FDA phase ⁇ ⁇ instead of the original experimental phase data.
  • ⁇ A should be free of nonlinearities and the phase gap should be zero.
  • the next step therefore is a linear fit to the phase spectrum ⁇ ' ⁇ h . It appears more effective for high-NA FDA to use the magnitude spectrum P ⁇ in place of magnitude squared. The fit provides for each pixel a slope
  • phase gap A carries the double prime inherited from the fringe order uncertainty in the phase data.
  • the slope ⁇ ⁇ is free of this uncertainty. From the intercept A" and the slope ⁇ A , we define for a specific mean or nominal spatial frequency KO a "coherence profile"
  • the first example of a surface topography measurement is a pure simulation.
  • the surface topography is everywhere zero, but there is an underlying film layer that progresses from 0 to 1500 nm in 10 nm increments.
  • this test demonstrates unambiguous determination of film thickness throughout the range of the prediction library, albeit for perfect, noise-free data.
  • FIG. 15 is also a simulation, but with additive noise.
  • the random additive noise is gaussian, with a standard deviation of 2 bits out of an average 128 intensity bits, which looks to be typical of real data. The results are clearly satisfactory despite the significant difference in reflectivity between SiO 2 and Si (4% to 45%). We now address system characterization.
  • K0 is the nominal spatial frequency, which represents the nominal spectral frequency for the FDA data set, as identified e.g. by locating the midpoint of the ROI.
  • M grey capital "M”
  • M is a new system characterization that makes it possible to use object surface reflectivity as a parameter in the library search.
  • phase offset ⁇ and the system phase gap A sys as a functions of field position can be stored as a function of field position, and calculate the true system dispersion according to
  • the magnitude coefficient M is also field dependent.
  • system characterization data proceeds in a manner similar to that described above for the object sample.
  • connect ( ) is pixel-to-pixel phase unwrapping.
  • the magnitude map is
  • system characterizations can be averaged, perhaps using artifacts having similar surface structure to the final application (e.g. SiO2 on Si) over a range of sample types.
  • FIG. 16a shows height profiles determined from actual scanning interferometry data of a 2400 lines per mm (lpinm) grating having a peak-to-valley (PV) modulation depth of
  • the top profile in FIG. 16a shows the height profile determined using a conventional FDA analysis.
  • the conventional analysis indicates a PV modulation depth of only about 10 nm, greatly underestimating the actual modulation depth. This inaccuracy occurs because the grating has features at the limit of the optical resolution of the 500-nm instrument. This is so even though the pixel resolution of the camera in the instrument is more than sufficient to accurately resolve the grating.
  • the scanning interferometry signal for a first camera pixel generally corresponding to a first surface location also includes contributions from adjacent surface locations when those additional surface locations have surface features sufficiently sha ⁇ relative to the light wavelength to diffract light to the first pixel.
  • the surface height features from those adjacent surface locations corrupt conventional analysis of the scanning interferometry signal corresponding to the first surface location.
  • FIG. 17 illustrates this by showing the scanning interferometry signal from pixels corresponding to various locations about a step height feature.
  • the step height is to the right of the pixel and higher, for the signal in (b) the step passes directly through the pixel, and for the signal in (c) the step is to the left of the pixel and is lower.
  • One signature that is immediately apparent in the signals is the reduction in fringe contrast in (b) relative to (a) and (c). For example, if the step height was equal to one-quarter of the wavelength and the pixel location corresponded exactly to the position of the step height, the fringe contrast in (b) should disappear entirely because interference from the two sides of the step would exactly cancel one another.
  • FIGS. 16b and 19b show the height profile determined using the library search analysis for
  • FIGS. 19a and 19b show a similar analysis for a simulation with a discrete step height and assuming a nominal 500-nm light source.
  • FIG. 19a shows the height profile determined using conventional FDA processing (solid line) compared to the actual height profile for the simulation (dotted line).
  • FIG. 19b shows the height profile determined using the library search method (solid line) compared to the actual height profile for the simulation (dotted line).
  • the parameters for the model spectra in the library search were location and step height magnitude. As illustrated, the library search analysis improves lateral resolution from about 0.5 microns to about 0.3 microns.
  • the comparison between information in the actual data and information corresponding to the different models has occurred in the frequency domain.
  • the comparison can be made in the scan coordinate domain.
  • changes in the absolute position of the fringe contrast envelope is generally indicative of changes in surface height at a first surface location corresponding to the signal in question
  • the shape of the signal (independent of its absolute position) contains information of complex surface structure, such as underlying layers at the first surface location and/or surface structure at adjacent locations.
  • One simple case is to consider to the magnitude of the fringe contrast envelope itself.
  • the fringe contrast magnitude can be compared to that for models corresponding to different thin film thicknesses to a identify a match for a particular thin film thickness (taking into account systematic contributions from the interferometer itself)
  • Another simple case is to look at the relative spacings of the zero crossings of the fringes under the fringe contrast envelope.
  • the relative spacings between the different zero crossings should be nominally the same. Variations in the relative spacings are therefore indicative of complex surface structure (when taking into account systematic contributions from the interferometer itself) and can compared to models for different complex surface structures to identify a match to a particular surface structure.
  • Another case is to perform a correlation between the scan-domain signal and the scan-domain signals corresponding to different models of the test surface. A match generally corresponds to the correlation that has the highest peak value, which indicate the model whose scan-domain signal has a shape most similar to the shape of the actual signal.
  • an analysis in the scan-coordinate domain can be used for many different types of complex surfaces, including not only thin films, but also other complex surface structures such as under-resolved surface height features as described above.
  • the approach sets aside any assumptions about the interference pattern other than to say that all pixels in a data set corresponding to surface locations with the same complex surface characteristics contain the same basic, localized interference pattern, only shifted in position (and possibly rescaled) for each pixel. It does not matter what the signal actually looks like, whether it is a gaussian envelope or has a linear phase behavior in the frequency domain or whatever.
  • the idea is to generate a sample signal or template that represents this localized interference pattern for different models of complex surface structures for the test object, and then for each pixel, find the model whose localized interference pattern best matches the shape of the actual localized interference pattern, and for that model, find the scan position within the data set that provides the best match between the interference pattern template and the observed signal - which gives the surface height.
  • One approach is to mathematically correlate each template with the data. Using a complex (i.e. real plus imaginary) template function for each model, we recover two profiles, one closely associated with the envelope of the signal and the other associated with the phase of the underlying carrier signal.
  • the analysis for each pixel would be include: (1) selecting a test template from a library of templates calculated or recorded for a specific value of an adjustable parameter, such as film thickness; (2) finding the local surface height using the selected test template and a correlation technique (an example of which is described below); (3) recording the peak merit function value for the selected test template based on the correlation technique; (4) repeating steps 1-3 for all or a subset of the templates in the library; (5) determining which test template provides the best match ( ⁇ highest peak merit function value); (6) recording the value for the adjustable parameter for the best-matched template (e.g., thin film thickness); and (7) recalling the height value that provided the peak match position within the data trace.
  • an adjustable parameter such as film thickness
  • V temp (0 ⁇ mp ( ⁇ )oos[K ⁇ ⁇ + ⁇ i mp ( ⁇ )] (108),
  • ⁇ ( ⁇ ) ⁇ mp ⁇ ) [i ⁇ K 0 ⁇ + ⁇ L ⁇ (109).
  • an appropriate window might be
  • window width ⁇ could be set by hand.
  • I ex ( ⁇ ,x) DC ex (x) + ...
  • phase and envelope are separable by simple operations, e.g. we can access the product of the signal strength AC ⁇ (x) and envelope m ex using the magnitude of the complex function 1 ⁇ :
  • Hi ⁇ we expect at least a meaningful portion of Hi ⁇ to have the same general shape as m t J em for the correct model, the only difference being the linear offset h ex and the scaling factor AC ⁇ (x) .
  • the task at hand is to locate a specific signal pattern represented by the interference pattern template/ ⁇ , within an experimental data set I ex , and determine how well of a match there is for each of the different models j.
  • the first step is to find the scan position ⁇ best for which the shapes of the envelopes m ex , m pat and ⁇ , are best matched.
  • a viable approach is a merit function based on the normalized con-elation of the interference pattern template with the signal within a segment of the scan defined by the window w :
  • MinDenom is the minimum relative signal strength that we consider valid in the merit function search.
  • the value of MinDenom can be hard coded at 5% or some other small value, or left as an adjustable parameter.
  • the correlation integral I can also be performed in the frequency domain using the correlation theorem:
  • a search through FI to find a peak value yields the best match position ⁇ best and the value of IT is a measure of the quality of the match, ranging from zero to one, with one corresponding to a perfect match.
  • the peak value of the merit function is calculated for each of the different models to determine which model is the best match, and then the best match position ⁇ best for that model gives the surface height.
  • FIGS. 20-24 illustrate an example of the technique.
  • FIG. 20 shows an actual scanning interferometry signal of a base Si substrate without a thin film.
  • FIGS. 21 and 22 show interference template patterns for a bare Si substrate and a thin film structure with 1 micron of SiO2 on Si, respectively.
  • FIGS. 23 and 24 show the merit function as a function of scan positions for template functions in FIGS. 21 and 22, respectively.
  • the merit functions show that the interference template pattern for the bare substrate is a much better match (peak value 0.92) than that for the thin film template pattern (peak value 0.76) and therefore indicate that the test sample is a bare substrate.
  • the position of the peak in the merit function for the correct template pattern gives the relative surface height position for the test sample.
  • Additional embodiments of the invention include applying any of the measurement techniques described above to address any of the semiconductor applications described below, and systems for carrying out both the measurement techniques and the semiconductor applications.
  • a surface topography measuring system should have lateral resolution comparable to the lateral size of typical surface features, and vertical resolution comparable to the minimum allowed surface step height. Typically, this requires a lateral resolution of less than a micron, and a vertical resolution of less than 1 nanometer.
  • Such a system it is also preferable for such a system to make its measurements without contacting the surface of the chip, or otherwise exerting a potentially damaging force upon it, so as to avoid modifying the surface or introducing defects. Further, as it is well-known that the effects of many processes used in chip making depend strongly on local factors such as pattern density and edge proximity, it is also important for a surface topography measuring system to have high measuring throughput, and the ability to sample densely over large areas in regions which may contain one or many surface features of interest.
  • the dual damascene process may be considered to have five parts: (1) an interlayer dielectric (ILD) deposition, in which a layer of dielectric material (such as a polymer, or glass) is deposited onto the surface of a wafer (containing a plurality of individual chips); (2) chemical mechanical polishing (CMP), in which the dielectric layer is polished so as to create a smooth surface, suitable for precision optical lithography, (3) a combination of lithographic patterning and reactive ion etching steps, in which a complex network is created comprising narrow trenches running parallel to the wafer surface and small vias running from the bottom of the trenches to a lower (previously defined) electrically conducting layer, (4) a combination of metal deposition steps which result in the trenches and vias being over-
  • ILD interlayer dielectric
  • CMP chemical mechanical polishing
  • the thickness of the copper in the trench areas lie in a range of 0.2 to 0.5 microns.
  • the width of the resulting trenches may be in a range of from 100 to 100,000 nanometers, and the copper regions within each chip may in some regions form regular patterns such as arrays of parallel lines, and in others they may have no apparent pattern.
  • the surface may be densely covered with copper regions, and in other regions, the copper regions may be sparse.
  • polishing rate and therefore the remaining copper (and dielectric) thickness after polishing, depends strongly and in a complex manner on the polishing conditions (such as the pad pressure and polishing slurry composition), as well as on the local detailed arrangement (i.e., orientation, proximity and shape) of copper and surrounding dielectric regions.
  • This 'position dependent polishing rate' is known to give rise to variable surface topography on many lateral length scales. For example, it may mean that chips located closer to the edge of a wafer on aggregate are polished more rapidly than those located close to the center, creating copper regions which are thinner than desired near the edges, and thicker than desired at the center. This is an example of a 'wafer scale' process nonuniformity - i.e., one occurring on length scale comparable to the wafer diameter. It is also known that regions which have a high density of copper trenches polish at a higher rate than nearby regions with low copper line densities. This leads to a phenomenon known as 'CMP induced erosion' in the high copper density regions.
  • 'chip scale' process non- uniformity - i.e., one occurring on a length scale comparable to (and sometimes much less than) the linear dimensions of a single chip.
  • Another type of chip scale nonuniformity known as 'dishing', occurs within single copper filled trench regions (which tend to polish at a higher rate than the surrounding dielectric material). For trenches greater than a few microns in width dishing may become severe with the result that affected lines later exhibit excessive electrical resistance, leading to a chip failure.
  • CMP induced wafer and chip scale process nonuniformities are inherently difficult to predict, and they are subject to change over time as conditions within the CMP processing system evolve.
  • To effectively monitor, and suitably adjust the process conditions for the pu ⁇ ose of ensuring that any nonuniformities remain within acceptable limits it is important for process engineers to make frequent non-contact surface topography measurements on chips at a large number and wide variety of locations. This is possible using embodiments of the interferometry techniques described above.
  • Any of the computer analysis methods described above can be implemented in hardware or software, or a combination of both.
  • the methods can be implemented in computer programs using standard programming techniques following the method and figures described herein.
  • Program code is applied to input data to perform the functions described herein and generate output information.
  • the output information is applied to one or more output devices such as a display monitor.
  • Each program may be implemented in a high level procedural or object oriented programming language to communicate with a computer system.
  • the programs can be implemented in assembly or machine language, if desired. In any case, the language can be a compiled or inte ⁇ reted language.
  • the program can run on dedicated integrated circuits preprogrammed for that pu ⁇ ose.
  • Each such computer program is preferably stored on a storage medium or device (e.g., ROM or magnetic diskette) readable by a general or special pu ⁇ ose programmable computer, for configuring and operating the computer when the storage media or device is read by the computer to perform the procedures described herein.
  • the computer program can also reside in cache or main memory during program execution.
  • the analysis method can also be implemented as a computer-readable storage medium, configured with a computer program, where the storage medium so configured causes a computer to operate in a specific and predefined manner to perform the functions described herein.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Mathematical Physics (AREA)
  • Databases & Information Systems (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

L'invention concerne un procédé consistant à comparer une information pouvant provenir d'un signal d'interférométrie à balayage pour un premier emplacement de surface d'un objet à tester avec l'information correspondant à de multiples modèles de l'objet à tester, les multiple modèles étant paramétrés par une série de caractéristiques pour l'objet à tester. L'information correspondant à de multiples modèles peut contenir l'information concernant au moins une composante d'amplitude d'une transformée d'un signal d'interférométrie à balayage correspondant à chacun des modèles de l'objet à tester.
PCT/US2004/007014 2003-03-06 2004-03-08 Profilage de structures a surface complexe utilisant l'interferometrie a balayage WO2004079294A2 (fr)

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JP2006506943A JP4791354B2 (ja) 2003-03-06 2004-03-08 走査干渉分光を用いた複雑な表面構造のプロファイリング
KR1020057016623A KR101169293B1 (ko) 2003-03-06 2004-03-08 주사 간섭측정을 이용한 복합 표면 구조의 프로파일링
EP04718562.4A EP1604169B1 (fr) 2003-03-06 2004-03-08 Procede de mesure du profil de structures a surface complexe utilisant l'interferometrie a balayage
CN2004800123237A CN1784588B (zh) 2003-03-06 2004-03-08 使用扫描干涉测量形成复杂表面结构的轮廓以及对其表征

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2417076A (en) * 2004-07-14 2006-02-15 Taylor Hobson Ltd Apparatus for and a method of determining a characteristic of a layer or layers
GB2423148A (en) * 2005-02-09 2006-08-16 Taylor Hobson Ltd Apparatus for and a method of determining a surface characteristic
JP2009516171A (ja) * 2005-11-15 2009-04-16 ザイゴ コーポレーション 光学的に未処理の表面特徴の特性を測定する干渉計及び方法
JP2009526978A (ja) * 2006-02-18 2009-07-23 カール マール ホールディング ゲーエムベーハー 光学表面センサー
JP2010101898A (ja) * 2005-01-20 2010-05-06 Zygo Corp オブジェクト表面の特徴を求める干渉計
JP2013210383A (ja) * 2005-11-15 2013-10-10 Zygo Corp 光学的に未処理の表面特徴の特性を測定する干渉計及び方法
US9677870B2 (en) 2011-06-27 2017-06-13 Hexagon Technology Center Gmbh Interferometric distance measuring method for measuring surfaces, and such a measuring arrangement
KR20200010599A (ko) * 2012-11-21 2020-01-30 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광학 확산 필름 및 이를 제조하는 방법
WO2020109486A1 (fr) * 2018-11-30 2020-06-04 Unity Semiconductor Procede et systeme pour mesurer une surface d'un objet comprenant des structures differentes par interferometrie a faible coherence
US10890428B2 (en) 2016-11-18 2021-01-12 Zygo Corporation Interferometric method and apparatus using calibration information relating a focus setting to a test object position
US20210107112A1 (en) * 2019-10-15 2021-04-15 Disco Corporation Thickness measuring apparatus
CN113639661A (zh) * 2021-08-11 2021-11-12 中国科学院长春光学精密机械与物理研究所 形貌检测系统及形貌检测方法
US11562919B2 (en) 2020-02-24 2023-01-24 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
US11796307B2 (en) 2020-02-24 2023-10-24 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5398113A (en) * 1993-02-08 1995-03-14 Zygo Corporation Method and apparatus for surface topography measurement by spatial-frequency analysis of interferograms
US5587792A (en) * 1993-06-21 1996-12-24 Nishizawa; Seiji Apparatus and method for measuring thickness of thin semiconductor multi-layer film
US5900633A (en) * 1997-12-15 1999-05-04 On-Line Technologies, Inc Spectrometric method for analysis of film thickness and composition on a patterned sample
EP0929094A2 (fr) * 1998-01-07 1999-07-14 International Business Machines Corporation Procédé et appareil pour mesurer la profondeur d'une interface enterrée
US6242739B1 (en) * 1998-04-21 2001-06-05 Alexander P. Cherkassky Method and apparatus for non-destructive determination of film thickness and dopant concentration using fourier transform infrared spectrometry

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9213159D0 (en) * 1992-06-22 1992-08-05 British Tech Group Method of and apparatus for interferometrically inspecting a surface of an object

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5398113A (en) * 1993-02-08 1995-03-14 Zygo Corporation Method and apparatus for surface topography measurement by spatial-frequency analysis of interferograms
US5587792A (en) * 1993-06-21 1996-12-24 Nishizawa; Seiji Apparatus and method for measuring thickness of thin semiconductor multi-layer film
US5900633A (en) * 1997-12-15 1999-05-04 On-Line Technologies, Inc Spectrometric method for analysis of film thickness and composition on a patterned sample
EP0929094A2 (fr) * 1998-01-07 1999-07-14 International Business Machines Corporation Procédé et appareil pour mesurer la profondeur d'une interface enterrée
US6242739B1 (en) * 1998-04-21 2001-06-05 Alexander P. Cherkassky Method and apparatus for non-destructive determination of film thickness and dopant concentration using fourier transform infrared spectrometry

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GB2417076A (en) * 2004-07-14 2006-02-15 Taylor Hobson Ltd Apparatus for and a method of determining a characteristic of a layer or layers
GB2417076B (en) * 2004-07-14 2009-05-27 Taylor Hobson Ltd Apparatus for and a method of determining a characteristic of a layer or layers
US7755768B2 (en) 2004-07-14 2010-07-13 Taylor Hobson Limited Apparatus for and a method of determining a characteristic of a layer or layers
JP2010101898A (ja) * 2005-01-20 2010-05-06 Zygo Corp オブジェクト表面の特徴を求める干渉計
GB2423148A (en) * 2005-02-09 2006-08-16 Taylor Hobson Ltd Apparatus for and a method of determining a surface characteristic
GB2423148B (en) * 2005-02-09 2008-04-16 Taylor Hobson Ltd Apparatus for and method of determining a surface charateristic
US7697726B2 (en) 2005-02-09 2010-04-13 Taylor Hobson Limited Interferometer system for and a method of determining a surface characteristic by modifying surface height data using corresponding amplitude data
JP2009516171A (ja) * 2005-11-15 2009-04-16 ザイゴ コーポレーション 光学的に未処理の表面特徴の特性を測定する干渉計及び方法
JP2013210383A (ja) * 2005-11-15 2013-10-10 Zygo Corp 光学的に未処理の表面特徴の特性を測定する干渉計及び方法
KR101321861B1 (ko) * 2005-11-15 2013-10-25 지고 코포레이션 광학적으로 분석되지 않은 표면 형상의 특징을 측정하는방법 및 간섭계
JP2013224945A (ja) * 2005-11-15 2013-10-31 Zygo Corp 光学的に未処理の表面特徴の特性を測定する干渉計及び方法
JP2009526978A (ja) * 2006-02-18 2009-07-23 カール マール ホールディング ゲーエムベーハー 光学表面センサー
US9677870B2 (en) 2011-06-27 2017-06-13 Hexagon Technology Center Gmbh Interferometric distance measuring method for measuring surfaces, and such a measuring arrangement
KR20200010599A (ko) * 2012-11-21 2020-01-30 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광학 확산 필름 및 이를 제조하는 방법
KR102159604B1 (ko) 2012-11-21 2020-09-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광학 확산 필름 및 이를 제조하는 방법
US10890428B2 (en) 2016-11-18 2021-01-12 Zygo Corporation Interferometric method and apparatus using calibration information relating a focus setting to a test object position
US10962348B2 (en) 2016-11-18 2021-03-30 Zygo Corporation Method and apparatus for optimizing the optical performance of interferometers
US11713960B2 (en) 2018-11-30 2023-08-01 Unity Semiconductor Method and system for measuring a surface of an object comprising different structures using low coherence interferometry
FR3089286A1 (fr) * 2018-11-30 2020-06-05 Unity Semiconductor Procédé et système pour mesurer une surface d’un objet comprenant des structures différentes par interférométrie à faible cohérence
WO2020109486A1 (fr) * 2018-11-30 2020-06-04 Unity Semiconductor Procede et systeme pour mesurer une surface d'un objet comprenant des structures differentes par interferometrie a faible coherence
EP4220072A1 (fr) * 2018-11-30 2023-08-02 Unity Semiconductor Procédé et système pour mesurer une surface d'un objet comprenant des structures différentes par interférométrie à faible cohérence
US11906302B2 (en) 2018-11-30 2024-02-20 Unity Semiconductor Method and system for measuring a surface of an object comprising different structures using low coherence interferometry
US20210107112A1 (en) * 2019-10-15 2021-04-15 Disco Corporation Thickness measuring apparatus
US11845158B2 (en) * 2019-10-15 2023-12-19 Disco Corporation Thickness measuring apparatus
US11562919B2 (en) 2020-02-24 2023-01-24 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
US11796307B2 (en) 2020-02-24 2023-10-24 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
CN113639661A (zh) * 2021-08-11 2021-11-12 中国科学院长春光学精密机械与物理研究所 形貌检测系统及形貌检测方法

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KR20050116372A (ko) 2005-12-12
KR101169293B1 (ko) 2012-07-30
JP2006519992A (ja) 2006-08-31
JP4791354B2 (ja) 2011-10-12
CN1784588B (zh) 2011-07-13
WO2004079294A3 (fr) 2005-05-19
JP5443209B2 (ja) 2014-03-19
CN1784588A (zh) 2006-06-07
JP2011169920A (ja) 2011-09-01

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