WO2004076706A3 - A method of forming sputtering target assembly and assemblies made therefrom - Google Patents

A method of forming sputtering target assembly and assemblies made therefrom Download PDF

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Publication number
WO2004076706A3
WO2004076706A3 PCT/US2004/005538 US2004005538W WO2004076706A3 WO 2004076706 A3 WO2004076706 A3 WO 2004076706A3 US 2004005538 W US2004005538 W US 2004005538W WO 2004076706 A3 WO2004076706 A3 WO 2004076706A3
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
target
target assembly
made therefrom
assemblies
Prior art date
Application number
PCT/US2004/005538
Other languages
French (fr)
Other versions
WO2004076706A2 (en
Inventor
Robert B Ford
Christopher A Michaluk
Charles E Wickersham Jr
Original Assignee
Cabot Corp
Robert B Ford
Christopher A Michaluk
Charles E Wickersham Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp, Robert B Ford, Christopher A Michaluk, Charles E Wickersham Jr filed Critical Cabot Corp
Publication of WO2004076706A2 publication Critical patent/WO2004076706A2/en
Publication of WO2004076706A3 publication Critical patent/WO2004076706A3/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

Abstract

A method of forming a sputtering target assembly is described that involves explosively bonding a target grade plate and a backing plate member to form a bonded preform having dimensions such that a large target or several target assemblies can be obtained. The method includes partitioning the bonded preform into a plurality of sputtering target assemblies. An interlayer can optionally be disposed between the target grade plate and the backing plate member before bonding. A bond quality test sample can be produced by the method. The sputtering target assemblies, the bonded preform, and the bond quality test sample are further described.
PCT/US2004/005538 2003-02-25 2004-02-24 A method of forming sputtering target assembly and assemblies made therefrom WO2004076706A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45019603P 2003-02-25 2003-02-25
US60/450,196 2003-02-25

Publications (2)

Publication Number Publication Date
WO2004076706A2 WO2004076706A2 (en) 2004-09-10
WO2004076706A3 true WO2004076706A3 (en) 2005-01-27

Family

ID=32927618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/005538 WO2004076706A2 (en) 2003-02-25 2004-02-24 A method of forming sputtering target assembly and assemblies made therefrom

Country Status (3)

Country Link
US (1) US20040262157A1 (en)
TW (1) TW200506080A (en)
WO (1) WO2004076706A2 (en)

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KR20060033013A (en) * 2003-07-14 2006-04-18 토소우 에스엠디, 인크 Sputtering target assembly having low conductivity backing plate and method of making same
ATE474071T1 (en) * 2003-08-11 2010-07-15 Honeywell Int Inc TARGET/SUPPORT PLATE CONSTRUCTIONS AND MANUFACTURING METHODS THEREOF
US20050230244A1 (en) * 2004-03-31 2005-10-20 Hitachi Metals, Ltd Sputter target material and method of producing the same
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
US7891536B2 (en) 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
KR20090051215A (en) 2006-09-12 2009-05-21 토소우 에스엠디, 인크 Sputtering target assembly and method of making same
US20080078268A1 (en) 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
RU2478732C1 (en) * 2011-09-13 2013-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирский государственный индустриальный университет" Composite electrically blasted conductor for blast deposition of coatings or metal and alloy surface blast alloying
WO2013049274A2 (en) 2011-09-29 2013-04-04 H.C. Starck, Inc. Large-area sputtering targets and methods of manufacturing large-area sputtering targets
RU2518037C1 (en) * 2013-03-25 2014-06-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирский государственный индустриальный университет" METHOD OF ELECTROEXPLOSIVE SPUTTERING OF COMPOSITE WEAR-RESISTANT COATINGS OF SYSTEM TiC-Mo ON FRICTION SURFACE
US20170287685A1 (en) * 2016-04-01 2017-10-05 Honeywell International Inc. Sputtering target assembly having a graded interlayer and methods of making
KR102503996B1 (en) 2018-03-05 2023-03-02 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. Spherical tantalum powder, products containing the same, and methods for producing the same
EP3746239A2 (en) * 2018-03-05 2020-12-09 Global Advanced Metals USA, Inc. Powder metallurgy sputtering targets and methods of producing same
CN108273994B (en) * 2018-03-30 2024-04-19 江苏理成科技有限公司 Preparation device and method of high-density molybdenum-niobium alloy target
US20220310371A1 (en) * 2021-03-26 2022-09-29 Sumitomo Chemical Company, Limited Sputtering target, method of bonding target material and backing plate, and method of manufacturing sputtering target

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166964A (en) * 1985-01-18 1986-07-28 Tokuda Seisakusho Ltd Target for sputtering
JPH04143268A (en) * 1990-10-04 1992-05-18 Fujitsu Ltd Production of target
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US5372694A (en) * 1992-12-14 1994-12-13 Leybold Aktiengesellschaft Target for cathode sputtering
DE19535845A1 (en) * 1995-09-15 1997-03-20 Interpane Entw & Beratungsges Transition mode reactive d.c. sputtering process
DE19546900C1 (en) * 1995-12-15 1997-04-24 Clearo Coating Glass Inh Adolf Tin@ cathode in magnetron sputtering apparatus
EP1067209A1 (en) * 1999-07-08 2001-01-10 Praxair S.T. Technology, Inc. Method of bonding a sputtering target to a backing plate
WO2002042513A2 (en) * 2000-11-27 2002-05-30 Cabot Corporation Hollow cathode target and methods of making same
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US20040074770A1 (en) * 2002-07-02 2004-04-22 George Wityak Rotary target
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Also Published As

Publication number Publication date
WO2004076706A2 (en) 2004-09-10
US20040262157A1 (en) 2004-12-30
TW200506080A (en) 2005-02-16

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