WO2004066349A3 - Funktionsschicht eines organischen feldeffekt transistors mit ausgleich von druckbedingten defekten - Google Patents

Funktionsschicht eines organischen feldeffekt transistors mit ausgleich von druckbedingten defekten Download PDF

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Publication number
WO2004066349A3
WO2004066349A3 PCT/EP2004/000422 EP2004000422W WO2004066349A3 WO 2004066349 A3 WO2004066349 A3 WO 2004066349A3 EP 2004000422 W EP2004000422 W EP 2004000422W WO 2004066349 A3 WO2004066349 A3 WO 2004066349A3
Authority
WO
WIPO (PCT)
Prior art keywords
printing
field effect
effect transistor
functional layer
compensation
Prior art date
Application number
PCT/EP2004/000422
Other languages
English (en)
French (fr)
Other versions
WO2004066349A2 (de
Inventor
Adolf Bernds
Alexander Friedrich Knobloch
Original Assignee
Siemens Ag
Adolf Bernds
Alexander Friedrich Knobloch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Adolf Bernds, Alexander Friedrich Knobloch filed Critical Siemens Ag
Priority to EP04703389A priority Critical patent/EP1586130A2/de
Publication of WO2004066349A2 publication Critical patent/WO2004066349A2/de
Publication of WO2004066349A3 publication Critical patent/WO2004066349A3/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

Die Erfindung betrifft eine Funktionsschicht eines organischen Feldeffekt Transistors (OFET), eine Elektrode und/oder eine Leiterbahn sowie eine Vorschrift zum Drucken dazu. Dabei werden die drucktechnischen Probleme, die sich beim Drucken organischer Elektronik ergeben, berücksichtigt.
PCT/EP2004/000422 2003-01-21 2004-01-20 Funktionsschicht eines organischen feldeffekt transistors mit ausgleich von druckbedingten defekten WO2004066349A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP04703389A EP1586130A2 (de) 2003-01-21 2004-01-20 Funktionsschicht eines organischen feldeffekt transistors mit ausgleich von druckbedingten defekten

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10302147 2003-01-21
DE10302147.7 2003-01-21

Publications (2)

Publication Number Publication Date
WO2004066349A2 WO2004066349A2 (de) 2004-08-05
WO2004066349A3 true WO2004066349A3 (de) 2005-01-20

Family

ID=32747468

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/000422 WO2004066349A2 (de) 2003-01-21 2004-01-20 Funktionsschicht eines organischen feldeffekt transistors mit ausgleich von druckbedingten defekten

Country Status (2)

Country Link
EP (1) EP1586130A2 (de)
WO (1) WO2004066349A2 (de)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017029A1 (en) * 1999-08-31 2001-03-08 E Ink Corporation Transistor for an electronically driven display
WO2001046987A2 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Inkjet-fabricated integrated circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017029A1 (en) * 1999-08-31 2001-03-08 E Ink Corporation Transistor for an electronically driven display
WO2001046987A2 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Inkjet-fabricated integrated circuits

Also Published As

Publication number Publication date
EP1586130A2 (de) 2005-10-19
WO2004066349A2 (de) 2004-08-05

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