WO2004061855A3 - Circuits et memoires tridimensionnelles entierement metalliques - Google Patents

Circuits et memoires tridimensionnelles entierement metalliques Download PDF

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Publication number
WO2004061855A3
WO2004061855A3 PCT/US2003/039262 US0339262W WO2004061855A3 WO 2004061855 A3 WO2004061855 A3 WO 2004061855A3 US 0339262 W US0339262 W US 0339262W WO 2004061855 A3 WO2004061855 A3 WO 2004061855A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
metal
memories
dimensional
dimensional circuits
Prior art date
Application number
PCT/US2003/039262
Other languages
English (en)
Other versions
WO2004061855A2 (fr
Inventor
Radu Andrei
Richard Spitzer
E James Torok
Original Assignee
Integrated Magnetoelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Magnetoelectronics filed Critical Integrated Magnetoelectronics
Priority to AU2003293488A priority Critical patent/AU2003293488A1/en
Publication of WO2004061855A2 publication Critical patent/WO2004061855A2/fr
Publication of WO2004061855A3 publication Critical patent/WO2004061855A3/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Abstract

L'invention concerne un circuit tridimensionnel et des procédés de fabrication dudit circuit. Le circuit tridimensionnel comprend une pluralité de niveaux empilés sur un substrat. Chaque niveau comprend une pluralité de composants de circuit entièrement métalliques présentant une magnétorésistance géante et disposés selon deux axes, le circuit comprend également une interconnexion permettant d'assurer des interconnexions entre les composants de circuit sur des niveaux différents d'une pluralité de niveaux.
PCT/US2003/039262 2002-12-20 2003-12-09 Circuits et memoires tridimensionnelles entierement metalliques WO2004061855A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003293488A AU2003293488A1 (en) 2002-12-20 2003-12-09 All-metal three-dimensional circuits and memories

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US43610302P 2002-12-20 2002-12-20
US60/436,103 2002-12-20
US10/731,732 US6992919B2 (en) 2002-12-20 2003-12-08 All-metal three-dimensional circuits and memories
US10/731,732 2003-12-08

Publications (2)

Publication Number Publication Date
WO2004061855A2 WO2004061855A2 (fr) 2004-07-22
WO2004061855A3 true WO2004061855A3 (fr) 2004-08-26

Family

ID=32717822

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/039262 WO2004061855A2 (fr) 2002-12-20 2003-12-09 Circuits et memoires tridimensionnelles entierement metalliques

Country Status (3)

Country Link
US (1) US6992919B2 (fr)
AU (1) AU2003293488A1 (fr)
WO (1) WO2004061855A2 (fr)

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US20070259523A1 (en) * 2006-05-04 2007-11-08 Yechuri Sitaramarao S Method of fabricating high speed integrated circuits
US7911830B2 (en) 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US7639005B2 (en) * 2007-06-15 2009-12-29 Advanced Microsensors, Inc. Giant magnetoresistive resistor and sensor apparatus and method
US7881092B2 (en) * 2007-07-24 2011-02-01 Rising Silicon, Inc. Increased switching cycle resistive memory element
US7656700B2 (en) * 2007-09-17 2010-02-02 Seagate Technology Llc Magnetoresistive sensor memory with multiferroic material
US8146032B2 (en) * 2009-01-30 2012-03-27 Synopsys, Inc. Method and apparatus for performing RLC modeling and extraction for three-dimensional integrated circuit (3D-IC) designs
WO2011103437A1 (fr) * 2010-02-22 2011-08-25 Integrated Magnetoelectronics Corporation Structure à forte gmr et à champs d'excitation faibles
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
US10073790B2 (en) 2015-12-03 2018-09-11 Samsung Electronics Co., Ltd. Electronic system with memory management mechanism and method of operation thereof
US9934154B2 (en) 2015-12-03 2018-04-03 Samsung Electronics Co., Ltd. Electronic system with memory management mechanism and method of operation thereof
US10762940B2 (en) 2016-12-09 2020-09-01 Integrated Magnetoelectronics Corporation Narrow etched gaps or features in multi-period thin-film structures
EP3721486A4 (fr) * 2017-12-06 2021-08-18 Integrated Magnetoelectronics Corporation Espaces ou caractéristiques gravés étroits de structures à couches minces à périodes multiples
CN111293136A (zh) * 2018-12-07 2020-06-16 中国科学院上海微系统与信息技术研究所 基于二维器件的三维mram存储结构及其制作方法

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US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5920500A (en) * 1996-08-23 1999-07-06 Motorola, Inc. Magnetic random access memory having stacked memory cells and fabrication method therefor
US20020024842A1 (en) * 2000-07-11 2002-02-28 Integrated Magnetoelectronics Corporation All metal giant magnetoresistive memory
US20020037595A1 (en) * 2000-09-28 2002-03-28 Keiji Hosotani Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same

Also Published As

Publication number Publication date
WO2004061855A2 (fr) 2004-07-22
US20040183198A1 (en) 2004-09-23
AU2003293488A1 (en) 2004-07-29
US6992919B2 (en) 2006-01-31

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