WO2004057661A3 - Non-volatile memory cell and method of fabrication - Google Patents

Non-volatile memory cell and method of fabrication Download PDF

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Publication number
WO2004057661A3
WO2004057661A3 PCT/IB2003/005502 IB0305502W WO2004057661A3 WO 2004057661 A3 WO2004057661 A3 WO 2004057661A3 IB 0305502 W IB0305502 W IB 0305502W WO 2004057661 A3 WO2004057661 A3 WO 2004057661A3
Authority
WO
WIPO (PCT)
Prior art keywords
trench
gate
stack
control gate
memory cell
Prior art date
Application number
PCT/IB2003/005502
Other languages
French (fr)
Other versions
WO2004057661A2 (en
Inventor
Schaijk Robertus T F Van
Duuren Michiel J Van
Original Assignee
Koninkl Philips Electronics Nv
Schaijk Robertus T F Van
Duuren Michiel J Van
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Schaijk Robertus T F Van, Duuren Michiel J Van filed Critical Koninkl Philips Electronics Nv
Priority to AU2003279478A priority Critical patent/AU2003279478A1/en
Priority to US10/539,250 priority patent/US20060220093A1/en
Priority to EP03772585A priority patent/EP1576661A2/en
Priority to JP2004561769A priority patent/JP2006511076A/en
Publication of WO2004057661A2 publication Critical patent/WO2004057661A2/en
Publication of WO2004057661A3 publication Critical patent/WO2004057661A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

Semiconductor device comprising a vertical split gate non-volatile memory cell, for storing at least one bit, on a semiconductor substrate, comprising on the substrate a trench, a first active area, a second active area, a channel region extending along a sidewall of the trench, the trench having a length extending in a first direction and a width extending in a second direction perpendicular thereto and the trench being covered on the sidewalls by a tunnel oxide and including at least one gate stack of a floating gate and a control gate, wherein the control gate extends to the bottom part of the trench, a first floating gate is located at a left trench wall to form a first stack with the control gate, and a second floating gate is located at a right trench wall to form a second stack with the control gate.
PCT/IB2003/005502 2002-12-19 2003-11-27 Non-volatile memory cell and method of fabrication WO2004057661A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003279478A AU2003279478A1 (en) 2002-12-19 2003-11-27 Non-volatile memory cell and method of fabrication
US10/539,250 US20060220093A1 (en) 2002-12-19 2003-11-27 Non-volatile memory cell and method of fabrication
EP03772585A EP1576661A2 (en) 2002-12-19 2003-11-27 Vertical split gate non-volatile memory cell and method of fabrication thereof
JP2004561769A JP2006511076A (en) 2002-12-19 2003-11-27 Vertical split gate non-volatile memory cell and manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02080428.2 2002-12-19
EP02080428 2002-12-19

Publications (2)

Publication Number Publication Date
WO2004057661A2 WO2004057661A2 (en) 2004-07-08
WO2004057661A3 true WO2004057661A3 (en) 2004-09-02

Family

ID=32668785

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/005502 WO2004057661A2 (en) 2002-12-19 2003-11-27 Non-volatile memory cell and method of fabrication

Country Status (6)

Country Link
US (1) US20060220093A1 (en)
EP (1) EP1576661A2 (en)
JP (1) JP2006511076A (en)
CN (1) CN1729558A (en)
AU (1) AU2003279478A1 (en)
WO (1) WO2004057661A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10306318B4 (en) * 2003-02-14 2010-07-22 Infineon Technologies Ag Semiconductor circuit with trench isolation and manufacturing process
US7456470B2 (en) * 2004-10-01 2008-11-25 International Rectifier Corporation Top drain fet with integrated body short
KR100607785B1 (en) 2004-12-31 2006-08-02 동부일렉트로닉스 주식회사 Method for manufacturing split gate flash EEPROM
US7378707B2 (en) * 2005-05-26 2008-05-27 Micron Technology, Inc. Scalable high density non-volatile memory cells in a contactless memory array
US7316978B2 (en) * 2005-08-02 2008-01-08 Nanya Technology Corporation Method for forming recesses
US7179748B1 (en) * 2005-08-02 2007-02-20 Nanya Technology Corporation Method for forming recesses
JP4282692B2 (en) * 2006-06-27 2009-06-24 株式会社東芝 Manufacturing method of semiconductor device
US7982284B2 (en) * 2006-06-28 2011-07-19 Infineon Technologies Ag Semiconductor component including an isolation structure and a contact to the substrate
KR101427362B1 (en) * 2006-09-19 2014-08-07 샌디스크 테크놀로지스, 인코포레이티드 Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7646054B2 (en) * 2006-09-19 2010-01-12 Sandisk Corporation Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7696044B2 (en) * 2006-09-19 2010-04-13 Sandisk Corporation Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7800161B2 (en) * 2006-12-21 2010-09-21 Sandisk Corporation Flash NAND memory cell array with charge storage elements positioned in trenches
US7642160B2 (en) * 2006-12-21 2010-01-05 Sandisk Corporation Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
JP2008300703A (en) * 2007-06-01 2008-12-11 Sharp Corp Method of manufacturing semiconductor device
DE112013007059T5 (en) * 2013-06-25 2016-01-28 Intel Corporation Memory cell having isolated charge sites, and method for their preparation
US9839428B2 (en) 2013-12-23 2017-12-12 Ethicon Llc Surgical cutting and stapling instruments with independent jaw control features
CN104952718B (en) * 2015-06-12 2017-09-05 苏州东微半导体有限公司 A kind of manufacture method of point of grid power device
CN104916544B (en) * 2015-04-17 2017-09-05 苏州东微半导体有限公司 A kind of manufacture method of plough groove type point grid power device
CN106531741B (en) * 2015-09-10 2019-09-03 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof, electronic device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049956A (en) * 1989-07-13 1991-09-17 Kabushiki Kaisha Toshiba Memory cell structure of semiconductor memory device
US5258634A (en) * 1991-05-17 1993-11-02 United Microelectronics Corporation Electrically erasable read only memory cell array having elongated control gate in a trench
US5386132A (en) * 1992-11-02 1995-01-31 Wong; Chun C. D. Multimedia storage system with highly compact memory device
US6093606A (en) * 1998-03-05 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical stacked gate flash memory device
US6130453A (en) * 1999-01-04 2000-10-10 International Business Machines Corporation Flash memory structure with floating gate in vertical trench
US20020096703A1 (en) * 1996-05-29 2002-07-25 Madhukar B. Vora Vertically integrated flash eeprom for greater density and lower cost

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5705415A (en) * 1994-10-04 1998-01-06 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
US5751038A (en) * 1996-11-26 1998-05-12 Philips Electronics North America Corporation Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers
US6124608A (en) * 1997-12-18 2000-09-26 Advanced Micro Devices, Inc. Non-volatile trench semiconductor device having a shallow drain region
US6087222A (en) * 1998-03-05 2000-07-11 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical split gate flash memory device
US6465836B2 (en) * 2001-03-29 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd Vertical split gate field effect transistor (FET) device
TWI283912B (en) * 2002-10-21 2007-07-11 Nanya Technology Corp A trench type stacked gate flash memory and the method to fabricate the same
TW569435B (en) * 2002-12-17 2004-01-01 Nanya Technology Corp A stacked gate flash memory and the method of fabricating the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049956A (en) * 1989-07-13 1991-09-17 Kabushiki Kaisha Toshiba Memory cell structure of semiconductor memory device
US5258634A (en) * 1991-05-17 1993-11-02 United Microelectronics Corporation Electrically erasable read only memory cell array having elongated control gate in a trench
US5386132A (en) * 1992-11-02 1995-01-31 Wong; Chun C. D. Multimedia storage system with highly compact memory device
US20020096703A1 (en) * 1996-05-29 2002-07-25 Madhukar B. Vora Vertically integrated flash eeprom for greater density and lower cost
US6093606A (en) * 1998-03-05 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical stacked gate flash memory device
US6130453A (en) * 1999-01-04 2000-10-10 International Business Machines Corporation Flash memory structure with floating gate in vertical trench

Also Published As

Publication number Publication date
US20060220093A1 (en) 2006-10-05
AU2003279478A8 (en) 2004-07-14
WO2004057661A2 (en) 2004-07-08
CN1729558A (en) 2006-02-01
AU2003279478A1 (en) 2004-07-14
EP1576661A2 (en) 2005-09-21
JP2006511076A (en) 2006-03-30

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