WO2004025741A1 - A high brightness light emitting diode and its method of making - Google Patents

A high brightness light emitting diode and its method of making Download PDF

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Publication number
WO2004025741A1
WO2004025741A1 PCT/KR2003/001863 KR0301863W WO2004025741A1 WO 2004025741 A1 WO2004025741 A1 WO 2004025741A1 KR 0301863 W KR0301863 W KR 0301863W WO 2004025741 A1 WO2004025741 A1 WO 2004025741A1
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WIPO (PCT)
Prior art keywords
lead frame
frame
light
led
led chip
Prior art date
Application number
PCT/KR2003/001863
Other languages
French (fr)
Inventor
Ae Jeong Ryu
Original Assignee
Tco Co., Ltd
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Publication date
Application filed by Tco Co., Ltd filed Critical Tco Co., Ltd
Priority to AU2003261643A priority Critical patent/AU2003261643A1/en
Publication of WO2004025741A1 publication Critical patent/WO2004025741A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • the present invention relates generally high brightness White L ED and its method of making, in detail light efficiency improve and in same time InGaN, GaN LED chip as emitting cause have within opposite direction of radiation board, lens form in opposite direction of emit-board, for change light emitting wavelength on this lens fluorescent material of Yttrium, Aluminium, Ganet (YAG fluorescent material) mix epoxy at regular rate in sheathing and vacuum plating on lens surface, in coated lens surface as coating material(Rh, Ag, Au, YeZn) which reflect total light spread light emitted LED chip transmit with emitting wavelength of chip to wall of fluorescent material, mix emitting wavelength of chip which re-reflected by reflection coating material, as change wavelength it gets white light.
  • YAG fluorescent material YAG fluorescent material
  • Generally optical semiconductor device is parts for following transmission of light through the electric signal, classify the electric signal change light signal by
  • LED common emitting light device using front output of power and photosensitive device(photo transistor, photo diode, triac, photo IC) changing electric signal by light signal.
  • photosensitive device photo transistor, photo diode, triac, photo IC
  • Those optical semiconductor device make all kinds of wavelength product of UV light, visual light and infra red light from type, density, structure of impurities forming PN junction of semiconductor crystal.
  • UV ray(350nm ⁇ 405nm) LED makes usually use of a sterilizer and counterfeit noter perception instrument
  • visual light(405nm ⁇ 880nm) LED makes usually use of indication
  • infra red light(880nm ⁇ 990nm) LED makes use of signal transaction as device which have light not recognize by human sight with photo transistor, photo diode.
  • optical semiconductor device like visual LED and white LED using it.
  • Visual LED is LED using Injection type Electro Luminescence of p-n junction, impressed voltage for emitting light is very low and because of long lifetime it semiconductor device to use very wide like solid indication device or picture indication.
  • voltage impress it be formed light emitting chip(l:Chip) and Electric conductor metal Cathode and Anode lead(3,4) for impress voltage in the above chip(l), the above chip(l) stick to pad(2) of cup form making the edge of cathode lead by electric conductor glue(211), in same time be bonding the edge of anode lead(3) and wire(5), organizes between cathode and anode lead(4,3) electrically.
  • molding material(6) of insulation for protect the above chip(l) from outside, a part of the edge of cathode and anode lead(4,3) be exposed, be able to impress voltage from chip in outside.
  • optical semiconductor device chip(l) be emitting and be able to practice ability cause sources of electricity impress to chip(l) through cathode and anode lead(4,3)
  • molding material be formed from transparency Epoxy and make red, green, blue and orange, etc. in proportion to kinds of LED chip(l).
  • representative method of white LED is method of getting white light by emitting in same time after forming electrode by LED of red, green, blue(the three primary colors of light) stick to one package.
  • Such this method can get white light only using of 660nm purity red, 525nm purity green and 450nm purity blue of emitting light of LED, if emitting light brightness character of each LED is different, it be occurred spot cause ununiformity of color combination and visibility be lower. And, by using LED of the three color making price is very expensive, practicality has difficulty.
  • the present invention is to solute problem of such white LED, its purpose is to offer high brightness white LED and its method of making which can emit to emitting direction cause the loss of light reduces.
  • Another purpose of the present invention realize practicality of LED by use of light in long distance and improve LED brightness cause the straight of light emitting to front be improved after lens of package made spherical surface mirror, parabolic mirror.
  • the method of LED according as one practice of the present invention for this purpose is that a pair of frame arrange multiline as one group of multitude, it has the following character that the first process which dotting by electric conductor glue in opposite direction of emit-board every unit lead frame, the second process which this glue die-bonding LED chip(350nm ⁇ 470nm) in lead frame pad cup, the third process which the above LED chip being electrode junction by gold wire to frame of the above lead frame, the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy, forming lens in opposite direction of emit-board, the fifth process which Yttrium, Aluminium, Ganet fluorescent material(YAG fluorescent material) be mixing at regular rate in transparency epxoy on ended mold lens surface and vacuum plating, the sixth process which light be coating total reflective coating material(Rh, Ag, Au, YeZn) on coated lens surface, the seventh process which package be unifying by trimming.
  • LED chip has within the opposite direction of emit-board, in the opposite direction of emit-board spherical surface or parabolic reflector lens be formed as transmitted epoxy, for change light emitting wavelength on this lens surface Yttrium, Aluminium, Ganet fluorescent material be mixing at regular rate in epxoy of sheathing and vacuum plating on lens surface, by the light be spreading coating material(Rh, Ag, Au, YeZn) on coated lens surface, the light reflected from LED chip be getting white light cause it be mixed wavelength of chip reflecting from fluorescent material wall and wavelength of chip re-reflecting by reflection coating material on transmitting.
  • LED chip have within the opposite direction of emit-board, Yttrium, Aluminium, Ganet fluorescent material be potting in LED chip(350nm ⁇ 470nm) with mixing transparency epoxy at regular rate, spherical surface or parabolic reflector lens be formed as transmitted epoxy on this, the white light be getting by spread coating material(Rh, Ag, Au, YeZn) on lens surface.
  • the white light emits with mixing YAG wavelength by the light of blue wavelength from LED chip(350nm ⁇ 470nm) transmits YAG fluorescent material on LED chip(350nm ⁇ 470nm). This white light can take high brightness white light by reflect on wall which spreaded coating material(Rh, Ag, Au, YeZn) total- reflecting spherical surface and parabolic reflecctor.
  • Figs, la, lb are views showing a cross section of usual LED
  • Figs. 2a, 2b are views showing a cross section of usual white LED
  • Figs. 3a, 3b, 3c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the one practice of the present invention
  • Figs. 4a, 4b, 4c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the other practice of the present invention.
  • Figs. 5a, 5b, 5c are views showing a plain-cross section, front-cross section and side-cross section of high brightness LED(350nm ⁇ 990nm) according as the another practice of the present invention
  • Figs. 6 is a view showing the cross section of lens according as another practice of the present invention.
  • Figs. 7 is view showing the drawing for explanation about things which on roller of spherical lens and the figure position, size, the focal length as well as the figure magnification,
  • Figs. 8 is view showing the grape illustrating wave length distribution of white LED according as the one practice of the present invention. Best Mode for Carrying Out the Invention
  • optical semiconductor device and its method of making according as the present invention refer to following appending draft.
  • Figs. 3a, 3b, 3c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the one practice of the present invention
  • the above white LED method of making has the following that a pair of frame arrange multiline as one group of multitude, the first process which dotting for sticking to LED chip (1) by electric conductor glue(211), the second process which this glue(211) die-bonding LED chip(350nm ⁇ 470nm)(l) in lead frame pad cup(2), the third process which the above LED chip(l) being electrode junction by gold wire(5) to frame of the above lead frame, the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6), the fifth process which Yttrium, Aluminium, Ganet fluorescent material(YAG fluorescent material)(8) be mixing at regular rate in transparency epoxy on ended mold lens surface and coating, the sixth process which light be coating total reflective coating material(Rh, Ag, Au, YeZn) on coated lens(7) surface, the seventh process which package be unifying by trimming.
  • Figs. 4a, 4b, 4c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the other practice of the present invention.
  • the above white LED method of making has the following that a pair of frame arrange multiline as one group of multitude, the first process which dotting by electric conductor glue(211) every unit lead frame, the second process which this - glue die-bonding LED chip(l ; 430nm ⁇ 470nm) in lead frame pad cup, the third process which the above LED chip(l) being electrode junction by gold wire(5) to frame of the above lead frame, the fourth process which Yttrium, Aluminium, Ganet fluorescent material be potting in LED chip (1 ; 350nm ⁇ 470nm) with transparency epoxy and mixture of regular rate, the fifth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6), the sixth process which light be coating total reflective coating material(9 ; Rh, Ag, Au, YeZn) on ended mold of transparency epoxy lens surface, the seventh process which package be unifying by trimming.
  • Figs. 5a, 5b, 5c are LED for improving light efficiency improvement of
  • LED and straight of light these can prevent loss of light cause by reflect totally using principle of spherical surface mirror and Parabolic reflector mirror which visual light, infra red light, UV light LED except LED are spreaded total reflection coating(9) on lens surface.
  • Figs. 6 is lens cross section of optical semiconductor device for improving light efficiency improvement of LED and straight of light which get high brightness LED, shows lens drawing for total reflection of light from LED chip(l) in Figs.3 practice.
  • the present invention prevents the loss of light by total reflection of light using principle of spherical surface mirror and Parabolic reflector mirror.
  • spherical surface mirror call a convex mirror which outside of sphere is reflection board
  • spherical surface mirror call a concave mirror which inside of sphere is reflection board.
  • Both a convex and concave mirror have process of image formation, the center of mirror side call a pole, the center of curvature of sphere call the center of sphere, a straight line from pole to the center of sphere call a mirror axis or an optical axis.
  • a convex mirror has light emitted skill(a virtual focus), the focus is back of mirror, all images of things is virtual images, images is smaller than real thing wherever thing put on.
  • a concave lens has optically same skill with a convex lens and can improve LED brightness by straight of light improve when light totally reflect.
  • a convex lens has optically same skill with a concave lens and can improve LED brightness by straight of light improve when light totally reflect.
  • a convex mirror lens has optically same skill with a concave lens and spreads pointing of light when light totally reflect.
  • magnification of image is magnification which LED chip be large on spherical mirror lens, if magnification rate of this LED chip full on spherical mirror lens, straight and brightness of light improves.
  • a, b is positive(+) the image happen the front of mirror, if a, b is negative(-) the virtual image happen the back of mirror.
  • £>0 calls a concave mirror
  • f ⁇ 0 calls a convex mirror, when a triangular position image, m is +, when standing image, m is -.
  • this method is right when light emit by narrow belong light axis, not light that incidence as big angle about light from total mirror side or light axis.
  • This character is remarked when the focus distance is smaller than mirror, this is a spherical aberration.
  • Figs.5 is the parabolic mirror lens for assurance of spherical aberration.
  • Figs.8 is spectrum distribution draft that it spreads YAG fluorescent material coating and coating material( Rh, Ag, Au, YeZn) on parabolic mirror surface then realizes regular color coordinates in present invention. By these coating material spreads at regular thickness on lens surface, it appears regular spectrum distribution.
  • the present invention is able to get high brightness and low price product of white light realized regular color coordinates by YAG fluorescent material and coating material( Rh, Ag, Au, YeZn) which totally be reflecting light to this fluorescent material surface on spherical lens and parabolic lens surface. Also process of the present invention is simple and can get white light not a secular variation, if coating material( Rh, Ag, Au, YeZn) which totally be reflecting light spread in spherical lens and parabolic lens surface, the straight of light is improved, it has efficiency to produce high brightness product by light emitting to emit-direction without loss of light.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention improves effect of LED working direct current. In same time InGaN, GaN LED chip as emitting cause have within opposite direction of radiation board, lens form in opposite direction of emit-board, for change light emitting wavelength on this lens fluorescent of Yttrium, Aluminium, Ganet (YAG fluorescent) mix epoxy at regular rate in sheathing and vacuum plating on lens surface, in coated lens surface as coating material (Rh, Af, Au, YeZn) which reflect total light spread light emitted LED chip transmit with emitting wavelength of chip to wall of fluorescent, mix emitting wavelength of chip which re-reflected by reflection coating material, as change wavelength it gets white light. The present relates to high brightness LED and its method of making.

Description

A HIGH BRIGHTNESS LIGHT EMITTING DIODE AND ITS METHOD OF MAKING
Technical Field
The present invention relates generally high brightness White L ED and its method of making, in detail light efficiency improve and in same time InGaN, GaN LED chip as emitting cause have within opposite direction of radiation board, lens form in opposite direction of emit-board, for change light emitting wavelength on this lens fluorescent material of Yttrium, Aluminium, Ganet (YAG fluorescent material) mix epoxy at regular rate in sheathing and vacuum plating on lens surface, in coated lens surface as coating material(Rh, Ag, Au, YeZn) which reflect total light spread light emitted LED chip transmit with emitting wavelength of chip to wall of fluorescent material, mix emitting wavelength of chip which re-reflected by reflection coating material, as change wavelength it gets white light.
Background Art
Generally optical semiconductor device is parts for following transmission of light through the electric signal, classify the electric signal change light signal by
LED, common emitting light device using front output of power and photosensitive device(photo transistor, photo diode, triac, photo IC) changing electric signal by light signal. Those optical semiconductor device make all kinds of wavelength product of UV light, visual light and infra red light from type, density, structure of impurities forming PN junction of semiconductor crystal.
UV ray(350nm~405nm) LED makes usually use of a sterilizer and counterfeit noter perception instrument, visual light(405nm~880nm) LED makes usually use of indication, infra red light(880nm~990nm) LED makes use of signal transaction as device which have light not recognize by human sight with photo transistor, photo diode.
The following description substitutes optical semiconductor device like visual LED and white LED using it.
Visual LED is LED using Injection type Electro Luminescence of p-n junction, impressed voltage for emitting light is very low and because of long lifetime it semiconductor device to use very wide like solid indication device or picture indication. Generally organization of LED likes Figs la, lb. By voltage impress, it be formed light emitting chip(l:Chip) and Electric conductor metal Cathode and Anode lead(3,4) for impress voltage in the above chip(l), the above chip(l) stick to pad(2) of cup form making the edge of cathode lead by electric conductor glue(211), in same time be bonding the edge of anode lead(3) and wire(5), organizes between cathode and anode lead(4,3) electrically.
Also it be molding by molding material(6) of insulation for protect the above chip(l) from outside, a part of the edge of cathode and anode lead(4,3) be exposed, be able to impress voltage from chip in outside. By connect electrically with circuit for use cathode and anode lead(4,3) of exposed LED outside, optical semiconductor device chip(l) be emitting and be able to practice ability cause sources of electricity impress to chip(l) through cathode and anode lead(4,3), molding material be formed from transparency Epoxy and make red, green, blue and orange, etc. in proportion to kinds of LED chip(l).
Meanwhile, representative method of white LED is method of getting white light by emitting in same time after forming electrode by LED of red, green, blue(the three primary colors of light) stick to one package. Such this method can get white light only using of 660nm purity red, 525nm purity green and 450nm purity blue of emitting light of LED, if emitting light brightness character of each LED is different, it be occurred spot cause ununiformity of color combination and visibility be lower. And, by using LED of the three color making price is very expensive, practicality has difficulty.
To solute problem of white LED using the three color LED, recently like illustration of Figs. 2a, 2b, after InGaN, GaN LED chiρ(l :350nm~470nm blue LED) have within pad cup(2), as a part of light be absorbed in pad cup(2) it get white light by potting Photo Luminescence fluorescent material(8) which has wavelength except wavelength of light.
However, the method getting white light by potting Photo Luminescence fluorescent material(8) has very complex process, rate of fluorescent material is not regular, it be occurred spot by wavelength discordance, visibility be lower. Also, in such this method practicality of white LED has difficulty cause brightness is very lower. The above two method are white LED method developing now. The following is summary of practicality difficulty.
AT frist, method of white LED using three color LED is expensive method, to getting white light is difficult, visibility is lower by spot, it is hard to solute change problem of a secular variation of white light cause each different brightness low speed of three color LED by time.
And, to getting white light potting Photo Luminescence fluorescent material has very difficult process cause producing product of different wavelength whenever produce by thickness of form and mix rate, also white LED is expensive cause loss cost of fluorescent material is high, it has practicality difficulty of white light cause brightness is very low.
Disclosure of the Invention
The present invention is to solute problem of such white LED, its purpose is to offer high brightness white LED and its method of making which can emit to emitting direction cause the loss of light reduces.
Other purpose of the present invention offer high confidence white LED and its method of making which not wavelength change and spot of white light.
Another purpose of the present invention realize practicality of LED by use of light in long distance and improve LED brightness cause the straight of light emitting to front be improved after lens of package made spherical surface mirror, parabolic mirror.
The method of LED according as one practice of the present invention for this purpose is that a pair of frame arrange multiline as one group of multitude, it has the following character that the frist process which dotting by electric conductor glue in opposite direction of emit-board every unit lead frame, the second process which this glue die-bonding LED chip(350nm~470nm) in lead frame pad cup, the third process which the above LED chip being electrode junction by gold wire to frame of the above lead frame, the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy, forming lens in opposite direction of emit-board, the fifth process which Yttrium, Aluminium, Ganet fluorescent material(YAG fluorescent material) be mixing at regular rate in transparency epxoy on ended mold lens surface and vacuum plating, the sixth process which light be coating total reflective coating material(Rh, Ag, Au, YeZn) on coated lens surface, the seventh process which package be unifying by trimming.
In the present invention, LED chip has within the opposite direction of emit-board, in the opposite direction of emit-board spherical surface or parabolic reflector lens be formed as transmitted epoxy, for change light emitting wavelength on this lens surface Yttrium, Aluminium, Ganet fluorescent material be mixing at regular rate in epxoy of sheathing and vacuum plating on lens surface, by the light be spreading coating material(Rh, Ag, Au, YeZn) on coated lens surface, the light reflected from LED chip be getting white light cause it be mixed wavelength of chip reflecting from fluorescent material wall and wavelength of chip re-reflecting by reflection coating material on transmitting.
Other practice about method of optical semiconductor device according as the present invention has the following character that the frist process which dotting by electric conductor glue in opposite direction of emit-board every unit lead frame, the second process which this glue die-bonding LED chip(350nm~470nm) in lead frame pad cup, the third process which the above LED chip being electrode junction by gold wire to frame of the above lead frame, the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy, forming lens in opposite direction of emit-board, the fifth process which Yttrium, Aluminium, Ganet fluorescent material(YAG fluorescent material) be mixing at regular rate in transparency epoxy on ended mold lens surface and vacuum plating, the sixth process which light be coating total reflective coating material(Rh, Ag, Au, YeZn) on coated lens surface, the seventh process which package be unifying by trimming. The practice is possible that LED chip have within the opposite direction of emit-board, Yttrium, Aluminium, Ganet fluorescent material be potting in LED chip(350nm~470nm) with mixing transparency epoxy at regular rate, spherical surface or parabolic reflector lens be formed as transmitted epoxy on this, the white light be getting by spread coating material(Rh, Ag, Au, YeZn) on lens surface. The practice is possible that the white light emits with mixing YAG wavelength by the light of blue wavelength from LED chip(350nm~470nm) transmits YAG fluorescent material on LED chip(350nm~470nm). This white light can take high brightness white light by reflect on wall which spreaded coating material(Rh, Ag, Au, YeZn) total- reflecting spherical surface and parabolic reflecctor.
Other practice about method of optical semiconductor device according as the present invention offer the following that this method improves emit-efficiency of visual light, infra red light, UV light LED except LED, like the above frist practice after the fourth process which be molding transmitted epoxy, YAG fluorescent material remove, only it is formed coating process with coating material(Rh, Ag, Au, YeZn) total- reflecting in lens surface, this practice offers making method about visual light, infra red light, UV light LED of high efficiency and LED made with this process.
Brief Description of the Drawings
Figs, la, lb are views showing a cross section of usual LED,
Figs. 2a, 2b are views showing a cross section of usual white LED,
Figs. 3a, 3b, 3c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the one practice of the present invention,
Figs. 4a, 4b, 4c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the other practice of the present invention,
Figs. 5a, 5b, 5c are views showing a plain-cross section, front-cross section and side-cross section of high brightness LED(350nm~990nm) according as the another practice of the present invention,
Figs. 6 is a view showing the cross section of lens according as another practice of the present invention,
Figs. 7 is view showing the drawing for explanation about things which on roller of spherical lens and the figure position, size, the focal length as well as the figure magnification,
Figs. 8 is view showing the grape illustrating wave length distribution of white LED according as the one practice of the present invention. Best Mode for Carrying Out the Invention
There are explanation of optical semiconductor device and its method of making according as the present invention refer to following appending draft.
Figs. 3a, 3b, 3c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the one practice of the present invention,
Like the illustration organization of optical semiconductor device and its method of making according as the present invention is formed Anode lead frame(3), Cathode lead frame(4), current conducting wire(5) for current conducting of the above Anode, Cathode lead frame(3,4) and LED chip(l), transmitted epoxy(6) molded with the above Anode, Cathode lead frame(3,4), lens surface(7) formed at the above transmitted epoxy (6) lower, YAG fluorescent material coating surface changing from light of 350nm~470nm wavelength to a part of 520nm~630nm wavelength on lens surface(7), and coating material(9 ; Rh, Ag, Au, YeZn) total- reflecting in fluorescent material surface.
The above white LED method of making has the following that a pair of frame arrange multiline as one group of multitude, the frist process which dotting for sticking to LED chip (1) by electric conductor glue(211), the second process which this glue(211) die-bonding LED chip(350nm~470nm)(l) in lead frame pad cup(2), the third process which the above LED chip(l) being electrode junction by gold wire(5) to frame of the above lead frame, the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6), the fifth process which Yttrium, Aluminium, Ganet fluorescent material(YAG fluorescent material)(8) be mixing at regular rate in transparency epoxy on ended mold lens surface and coating, the sixth process which light be coating total reflective coating material(Rh, Ag, Au, YeZn) on coated lens(7) surface, the seventh process which package be unifying by trimming. Figs. 4a, 4b, 4c are views showing a plain-cross section, front-cross section and side-cross section of white LED according as the other practice of the present invention.
This is the following that after LED chip(l) of GaN, InGaN blue with 350nm~470nm wavelength be die bonding in pad cup(2) of lead frame(3,4), YAG fluorescent material and mixture with transparency epoxy at regular rate be potting in pad cup of lead frame, then frame parts of lead frame be reaching safe in mold press and after be molding transmitted epoxy(6), total reflection coating material(9) be spreading on lens surface made epoxy(6).
The above white LED method of making has the following that a pair of frame arrange multiline as one group of multitude, the frist process which dotting by electric conductor glue(211) every unit lead frame, the second process which this - glue die-bonding LED chip(l ; 430nm~470nm) in lead frame pad cup, the third process which the above LED chip(l) being electrode junction by gold wire(5) to frame of the above lead frame, the fourth process which Yttrium, Aluminium, Ganet fluorescent material be potting in LED chip (1 ; 350nm~470nm) with transparency epoxy and mixture of regular rate, the fifth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6), the sixth process which light be coating total reflective coating material(9 ; Rh, Ag, Au, YeZn) on ended mold of transparency epoxy lens surface, the seventh process which package be unifying by trimming.
Figs. 5a, 5b, 5c are LED for improving light efficiency improvement of
LED and straight of light, these can prevent loss of light cause by reflect totally using principle of spherical surface mirror and Parabolic reflector mirror which visual light, infra red light, UV light LED except LED are spreaded total reflection coating(9) on lens surface.
Like LED method of making is the following that a pair of frame arrange multiline as one group of multitude, the frist process which dotting by electric conductor glue(211) every unit lead frame, the second process which this glue die- bonding LED chip(l l ; 350nm~990nm) in lead frame pad cup, the third process which the above LED chip(l 1) being electrode junction by gold wire(5) to frame of the above lead frame, the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6), the fifth process which light be coating total reflective coating material(9 ; Rh, Ag, Au, YeZn) on ended mold lens surface, the sixth process which package be unifying by trimming.
Figs. 6 is lens cross section of optical semiconductor device for improving light efficiency improvement of LED and straight of light which get high brightness LED, shows lens drawing for total reflection of light from LED chip(l) in Figs.3 practice.
Like such this the present invention prevents the loss of light by total reflection of light using principle of spherical surface mirror and Parabolic reflector mirror. [ ] form spherical surface mirror call a convex mirror which outside of sphere is reflection board, [ ] form spherical surface mirror call a concave mirror which inside of sphere is reflection board. Both a convex and concave mirror have process of image formation, the center of mirror side call a pole, the center of curvature of sphere call the center of sphere, a straight line from pole to the center of sphere call a mirror axis or an optical axis. The focus of spherical surface mirror put on line from the center of mirror to the center of sphere surface which position is 1/2 of sphere radius made reflection board. But, a convex mirror has light emitted skill(a virtual focus), the focus is back of mirror, all images of things is virtual images, images is smaller than real thing wherever thing put on. In opposition temper of image changes as position of things in a concave mirror, when thing puts on near mirror than the focus a virtual image shows diffusively. When thing puts on the center of the focus and sphere the standing image shows diffusively. When thing puts on far than the center of sphere reduced standing image shows. That, a concave lens has optically same skill with a convex lens and can improve LED brightness by straight of light improve when light totally reflect. A convex lens has optically same skill with a concave lens and can improve LED brightness by straight of light improve when light totally reflect. A convex mirror lens has optically same skill with a concave lens and spreads pointing of light when light totally reflect.
There are method about thing, image position, size, focal length and magnification of image on an axis of spherical mirror. That, like Figs. 7 illustration, the distance from the center of sphere to thing and image is a, b, focal length is magnification of image is m, it is that l/a+l/b=l/f=2/r, m=b/a. The magnification of image is magnification which LED chip be large on spherical mirror lens, if magnification rate of this LED chip full on spherical mirror lens, straight and brightness of light improves. Hereby, if a, b is positive(+) the image happen the front of mirror, if a, b is negative(-) the virtual image happen the back of mirror.
Also £>0 calls a concave mirror, f<0 calls a convex mirror, when a triangular position image, m is +, when standing image, m is -.
That, this method is right when light emit by narrow belong light axis, not light that incidence as big angle about light from total mirror side or light axis. This character is remarked when the focus distance is smaller than mirror, this is a spherical aberration. For avoiding a spherical aberration there usually use the parabolic mirror which reflection board is parabolic board in spite of a spherical mirror. Figs.5 is the parabolic mirror lens for assurance of spherical aberration. Providing fixed point F and fixed straight line g on a plain board, the parabola is formed when PF which is distance to F and PH which is distance to g is same, its point is P, F is focus, g is standard line.
Like Figs taking x-axis, y-axis, an equation of parabola is y=4px. But, F coordinates is (p,0). The light emitting from LED by this parabolic lens improves the straight of light cause totally reflect as parallel light when light totally reflect on lens surface and rules to improve brightness.
Figs.8 is spectrum distribution draft that it spreads YAG fluorescent material coating and coating material( Rh, Ag, Au, YeZn) on parabolic mirror surface then realizes regular color coordinates in present invention. By these coating material spreads at regular thickness on lens surface, it appears regular spectrum distribution.
Industrial Applicability Like such above explanation, the present invention is able to get high brightness and low price product of white light realized regular color coordinates by YAG fluorescent material and coating material( Rh, Ag, Au, YeZn) which totally be reflecting light to this fluorescent material surface on spherical lens and parabolic lens surface. Also process of the present invention is simple and can get white light not a secular variation, if coating material( Rh, Ag, Au, YeZn) which totally be reflecting light spread in spherical lens and parabolic lens surface, the straight of light is improved, it has efficiency to produce high brightness product by light emitting to emit-direction without loss of light.

Claims

Claims
1. The frist process which a pair of frame arrange multiline as one group of multitude and dotting by electric conductor glue(211) every unit lead frame ; the second process which this glue die-bonding LED chip(l ; 350nm~470nm) in lead frame pad cup(2) ; the third process which the above LED chip(l) being electrode junction by gold wire(5) to frame of the above lead frame ; the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6) and be forming lens(7) in the opposite direction of emit board ; the fifth process which Yttrium, Aluminium, Ganet fluorescent material be coating mixture(8) at regular rate on ended mold lens surface(7) ; the sixth process which coating material( Rh, Ag, Au, YeZn) which totally be reflecting light spread be coating on coated lens surface(7) by the above mixture(8) ; the seventh process which package be unifying by trimming ;
The high brightness white LED method of making.
2. The high brightness white LED made from making method of Claims 1.
3. The frist process which a pair of frame arrange multiline as one group of multitude and dotting by electric conductor glue(211) in opposite direction of emit- board every unit lead frame ; the second process which this glue(211) die-bonding LED chip(350nm~470nm) in lead frame pad cup ; the third process which the above LED chip(l) being electrode junction by gold wire(5) to frame of the above lead frame ; the fourth process which YAG fluorescent material be potting with mixture(8) at regular rate in LED chip(l ; 350nm~470nm) the fifth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6) and be forming lens(7) in the opposite direction of emit board ; the sixth process which coating material( Rh, Ag, Au, YeZn) which totally be reflecting light be coating on lens surface(7) ; the seventh process which package be unifying by trimming ; The high brightness white LED method of making.
4. The high brightness white LED made from making method of Claims 3.
5. The frist process which a pair of frame arrange multiline as one group of multitude and dotting by electric conductor glue(211) in opposite direction of ernit- board every unit lead frame ; the second process which this glue(211) die-bonding LED chip(l 1 ; 350nm~470nm) in lead frame pad cup ; the third process which the above LED chip(l) being electrode junction by gold wire(5) to frame of the above lead frame ; the fourth process which frame of the lead frame reaching safe in mold press and by molding transmitted epoxy(6) and be forming lens(7) in the opposite direction of emit board : the fifth process which coating material( Pvh, Ag, Au, YeZn) which totally be reflecting light be coating on lens surface(7) ; the sixth process which package be unifying by trimming ;
The high brightness white LED method of making.
6. The high brightness white LED made from making method of Claims 5.
PCT/KR2003/001863 2002-09-16 2003-09-15 A high brightness light emitting diode and its method of making WO2004025741A1 (en)

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CN100382341C (en) * 2004-06-28 2008-04-16 光宝科技股份有限公司 Reflective photoelectric semiconductor module
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