WO2004019400A1 - Thin film transistor - Google Patents
Thin film transistor Download PDFInfo
- Publication number
- WO2004019400A1 WO2004019400A1 PCT/IB2003/003477 IB0303477W WO2004019400A1 WO 2004019400 A1 WO2004019400 A1 WO 2004019400A1 IB 0303477 W IB0303477 W IB 0303477W WO 2004019400 A1 WO2004019400 A1 WO 2004019400A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- region
- apex region
- etching
- side edges
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title description 3
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 230000000873 masking effect Effects 0.000 claims abstract description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000009987 spinning Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000001243 acetic acids Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/562,293 US20060157709A1 (en) | 2002-08-20 | 2002-04-29 | Thin film transistor |
JP2004530444A JP2005536880A (en) | 2002-08-20 | 2003-08-06 | Thin film transistor |
EP03792565A EP1552550A1 (en) | 2002-08-20 | 2003-08-06 | Thin film transistor |
AU2003250453A AU2003250453A1 (en) | 2002-08-20 | 2003-08-06 | Thin film transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0219471.0 | 2002-08-20 | ||
GBGB0219471.0A GB0219471D0 (en) | 2002-08-20 | 2002-08-20 | Thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004019400A1 true WO2004019400A1 (en) | 2004-03-04 |
Family
ID=9942716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2003/003477 WO2004019400A1 (en) | 2002-08-20 | 2003-08-06 | Thin film transistor |
Country Status (9)
Country | Link |
---|---|
US (1) | US20060157709A1 (en) |
EP (1) | EP1552550A1 (en) |
JP (1) | JP2005536880A (en) |
KR (1) | KR20050052475A (en) |
CN (1) | CN100416779C (en) |
AU (1) | AU2003250453A1 (en) |
GB (1) | GB0219471D0 (en) |
TW (1) | TW200417039A (en) |
WO (1) | WO2004019400A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7192876B2 (en) * | 2003-05-22 | 2007-03-20 | Freescale Semiconductor, Inc. | Transistor with independent gate structures |
JP4954497B2 (en) * | 2004-05-21 | 2012-06-13 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
US7208379B2 (en) * | 2004-11-29 | 2007-04-24 | Texas Instruments Incorporated | Pitch multiplication process |
US8592879B2 (en) * | 2010-09-13 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN105990427B (en) * | 2015-02-17 | 2019-05-17 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic device |
TWI646691B (en) * | 2017-11-22 | 2019-01-01 | 友達光電股份有限公司 | Active element substrate and method of manufacturing same |
US11195754B2 (en) | 2018-10-09 | 2021-12-07 | International Business Machines Corporation | Transistor with reduced gate resistance and improved process margin of forming self-aligned contact |
US11189565B2 (en) | 2020-02-19 | 2021-11-30 | Nanya Technology Corporation | Semiconductor device with programmable anti-fuse feature and method for fabricating the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5340758A (en) * | 1990-10-05 | 1994-08-23 | General Electric Company | Device self-alignment by propagation of a reference structure's topography |
US5670062A (en) * | 1996-06-07 | 1997-09-23 | Lucent Technologies Inc. | Method for producing tapered lines |
JPH114001A (en) * | 1997-06-11 | 1999-01-06 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
US20020022364A1 (en) * | 2000-08-16 | 2002-02-21 | Yoshihisa Hatta | Method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61272776A (en) * | 1985-05-28 | 1986-12-03 | 三菱電機株式会社 | Matrix type display unit |
GB2245741A (en) * | 1990-06-27 | 1992-01-08 | Philips Electronic Associated | Active matrix liquid crystal devices |
TW295652B (en) * | 1994-10-24 | 1997-01-11 | Handotai Energy Kenkyusho Kk | |
US6501094B1 (en) * | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
-
2002
- 2002-04-29 US US10/562,293 patent/US20060157709A1/en not_active Abandoned
- 2002-08-20 GB GBGB0219471.0A patent/GB0219471D0/en not_active Ceased
-
2003
- 2003-08-06 KR KR1020057002749A patent/KR20050052475A/en not_active Application Discontinuation
- 2003-08-06 WO PCT/IB2003/003477 patent/WO2004019400A1/en active Application Filing
- 2003-08-06 CN CNB038196360A patent/CN100416779C/en not_active Expired - Fee Related
- 2003-08-06 AU AU2003250453A patent/AU2003250453A1/en not_active Abandoned
- 2003-08-06 JP JP2004530444A patent/JP2005536880A/en active Pending
- 2003-08-06 EP EP03792565A patent/EP1552550A1/en not_active Withdrawn
- 2003-08-15 TW TW092122550A patent/TW200417039A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5340758A (en) * | 1990-10-05 | 1994-08-23 | General Electric Company | Device self-alignment by propagation of a reference structure's topography |
US5670062A (en) * | 1996-06-07 | 1997-09-23 | Lucent Technologies Inc. | Method for producing tapered lines |
JPH114001A (en) * | 1997-06-11 | 1999-01-06 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacture thereof |
US20020022364A1 (en) * | 2000-08-16 | 2002-02-21 | Yoshihisa Hatta | Method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 04 30 April 1999 (1999-04-30) * |
Also Published As
Publication number | Publication date |
---|---|
CN100416779C (en) | 2008-09-03 |
TW200417039A (en) | 2004-09-01 |
GB0219471D0 (en) | 2002-10-02 |
AU2003250453A1 (en) | 2004-03-11 |
CN1675751A (en) | 2005-09-28 |
KR20050052475A (en) | 2005-06-02 |
EP1552550A1 (en) | 2005-07-13 |
US20060157709A1 (en) | 2006-07-20 |
JP2005536880A (en) | 2005-12-02 |
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