WO2004006324A3 - Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus - Google Patents

Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus Download PDF

Info

Publication number
WO2004006324A3
WO2004006324A3 PCT/FR2003/002056 FR0302056W WO2004006324A3 WO 2004006324 A3 WO2004006324 A3 WO 2004006324A3 FR 0302056 W FR0302056 W FR 0302056W WO 2004006324 A3 WO2004006324 A3 WO 2004006324A3
Authority
WO
WIPO (PCT)
Prior art keywords
making
pattern
pointed
conductive film
inserts
Prior art date
Application number
PCT/FR2003/002056
Other languages
English (en)
Other versions
WO2004006324A2 (fr
Inventor
Francois Baleras
Pierre Renard
Cyrille Rossat
Original Assignee
Commissariat Energie Atomique
Francois Baleras
Pierre Renard
Cyrille Rossat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Francois Baleras, Pierre Renard, Cyrille Rossat filed Critical Commissariat Energie Atomique
Priority to EP03762727A priority Critical patent/EP1520295A2/fr
Priority to US10/520,338 priority patent/US20050233587A1/en
Publication of WO2004006324A2 publication Critical patent/WO2004006324A2/fr
Publication of WO2004006324A3 publication Critical patent/WO2004006324A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

L'invention concerne un procédé de fabrication de film conducteur anisotrope à inserts conducteurs pointus. Le procédé comprend la gravure d'au moins un motif (C1, K1) dans un substrat monocristallin (15) pour former au moins une alvéole (22, 26) ayant un fond destiné à dessiner le contour d'une extrémité d'un insert (23, 27). Le dessin du motif est destiné à faire apparaître au moins une pointe faisant saillie dans le fond de l'alvéole lors de la gravure du motif selon le plan cristallographique (100) du substrat avec des plans limitants (111) ou (110) du motif. L'invention s'applique à la microconnectique.
PCT/FR2003/002056 2002-07-05 2003-07-02 Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus WO2004006324A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03762727A EP1520295A2 (fr) 2002-07-05 2003-07-02 Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus
US10/520,338 US20050233587A1 (en) 2002-07-05 2003-07-02 Method for making an anisotropic conductive film pointed conductive inserts

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0208451A FR2842023B1 (fr) 2002-07-05 2002-07-05 Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus
FR02/08451 2002-07-05

Publications (2)

Publication Number Publication Date
WO2004006324A2 WO2004006324A2 (fr) 2004-01-15
WO2004006324A3 true WO2004006324A3 (fr) 2004-12-09

Family

ID=29725195

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/002056 WO2004006324A2 (fr) 2002-07-05 2003-07-02 Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus

Country Status (4)

Country Link
US (1) US20050233587A1 (fr)
EP (1) EP1520295A2 (fr)
FR (1) FR2842023B1 (fr)
WO (1) WO2004006324A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10326298B4 (de) 2003-06-11 2008-03-20 Avery Dennison Zweckform Office Products Europe Gmbh Etikettenbogen
AU2016342020A1 (en) 2015-10-23 2018-05-10 Ccl Label, Inc. Label sheet assembly with improved printer feeding
USD813945S1 (en) 2016-03-22 2018-03-27 Ccl Label, Inc. Label sheet
USD862601S1 (en) 2016-07-07 2019-10-08 Ccl Label, Inc. Carrier assembly
US10038264B2 (en) 2016-11-14 2018-07-31 Microsoft Technology Licensing, Llc Universal coupling for electrically connecting a flexible printed circuit to another flexible printed circuit in multiple different orientations
CN108538792A (zh) * 2018-05-16 2018-09-14 武汉华星光电半导体显示技术有限公司 导电物质分布状态可控的异方性导电胶及其制备方法
USD914085S1 (en) 2018-08-29 2021-03-23 Ccl Label, Inc. Label sheet layout assemblies

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194876A (ja) * 1989-12-23 1991-08-26 Canon Inc 電気的接続部材の製造方法
US5135606A (en) * 1989-12-08 1992-08-04 Canon Kabushiki Kaisha Process for preparing electrical connecting member
FR2766618A1 (fr) * 1997-07-22 1999-01-29 Commissariat Energie Atomique Procede de fabrication d'un film conducteur anisotrope a inserts conducteurs
JP2001091579A (ja) * 1999-09-24 2001-04-06 Jsr Corp シート状コネクターおよびその製造方法、半導体装置接続装置並びに検査装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5379515A (en) * 1989-12-11 1995-01-10 Canon Kabushiki Kaisha Process for preparing electrical connecting member
TW406207B (en) * 1994-09-30 2000-09-21 Nippon Electric Co A method to manufacture an anisotropic conductive film used in liquid crystal display means and a method to meanufacture a liquid crystal panel
FR2726397B1 (fr) * 1994-10-28 1996-11-22 Commissariat Energie Atomique Film conducteur anisotrope pour la microconnectique
DE60107519T2 (de) * 2000-09-25 2005-12-15 Jsr Corp. Anisotropisches leitfähiges Verbindungsblatt, Herstellungsverfahren dafür und Produkt davon

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135606A (en) * 1989-12-08 1992-08-04 Canon Kabushiki Kaisha Process for preparing electrical connecting member
JPH03194876A (ja) * 1989-12-23 1991-08-26 Canon Inc 電気的接続部材の製造方法
FR2766618A1 (fr) * 1997-07-22 1999-01-29 Commissariat Energie Atomique Procede de fabrication d'un film conducteur anisotrope a inserts conducteurs
JP2001091579A (ja) * 1999-09-24 2001-04-06 Jsr Corp シート状コネクターおよびその製造方法、半導体装置接続装置並びに検査装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"METHOD TO CONTROL THE GEOMETRY AND VERTICAL PROFILE OF VIA HOLES IN SUBSTRATE MATERIALS", 5 October 1992, IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, VOL. 35, NR. 5, PAGE(S) 211-216, ISSN: 0018-8689, XP000312938 *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 454 (E - 1135) 19 November 1991 (1991-11-19) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 21 3 August 2001 (2001-08-03) *

Also Published As

Publication number Publication date
WO2004006324A2 (fr) 2004-01-15
US20050233587A1 (en) 2005-10-20
FR2842023B1 (fr) 2005-09-30
FR2842023A1 (fr) 2004-01-09
EP1520295A2 (fr) 2005-04-06

Similar Documents

Publication Publication Date Title
CA2323658A1 (fr) Ensemble modulaire outils de coupe
WO2003033404A1 (fr) Plaque de silicium, procede de fabrication associe et pile solaire
WO2005097506A3 (fr) Details dans des substrats et leurs procedes de formation
EP0969519A3 (fr) Cellule solaire ayant des dépressions dans le substrat et méthode de fabrication
WO2006023376A3 (fr) Plaquettes de coupe amovibles et leurs procedes de fabrication
CA2361633A1 (fr) Procede de production d'un outil d'enlevement de copeaux, et outil d'enlevement de copeaux
WO2003023880A8 (fr) Dispositifs electrochimiques a couche mince sur substrats fibreux ou de type ruban et procedes de fabrication et de conception associes
EP1139436A3 (fr) Cellule solaire
EP0981156A3 (fr) Feuille de protection auto-adhésive pour usage durant le meulage de la face arrière d'une plaquette de semi-conducteur, et sa méthode d'utilisation
WO2001093310A3 (fr) Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
IL143840A0 (en) Cutting insert with universal identification
AU2001266018A1 (en) Substrate with a reduced light-scattering, ultraphobic surface and a method for the production of the same
AU2002232418A1 (en) Semiconductor compliant substrate having a graded monocrystalline layer
TW373198B (en) Electronic part and manufacturing method thereof
EP1071124A3 (fr) Procédé de gravure par voie sèche pour former une ligne conductrice en tungstène dans un dispositif semiconducteur
WO2001073146A3 (fr) Outil a mises rapportees en carbure et procede de fabrication
AU6157399A (en) Mixing element for screw extruder
WO2007078458A3 (fr) Mandrin concentrique ajustable porte-outil avec cannelures
WO2004006324A3 (fr) Procede de fabrication de film conducteur anisotrope a inserts conducteurs pointus
CA2352050A1 (fr) Accessoire de coupe limitant les eclats
WO2000047355A3 (fr) Insertion de coupe en carbure moulee par injection
EP1114713A4 (fr) Feuille moulee et son procede de production
WO2001082362A3 (fr) Realisation de connexions electriques et mecaniques
AU2003238463A8 (en) Method for producing a component having submerged connecting areas
WO2001059845A3 (fr) Transistor bipolaire

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2003762727

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10520338

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 2003762727

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2003762727

Country of ref document: EP