WO2003106327A1 - Bauelement und verfahren zu dessen herstellung - Google Patents
Bauelement und verfahren zu dessen herstellung Download PDFInfo
- Publication number
- WO2003106327A1 WO2003106327A1 PCT/DE2002/004536 DE0204536W WO03106327A1 WO 2003106327 A1 WO2003106327 A1 WO 2003106327A1 DE 0204536 W DE0204536 W DE 0204536W WO 03106327 A1 WO03106327 A1 WO 03106327A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- anchoring
- layer
- sacrificial layer
- silicon layer
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000004873 anchoring Methods 0.000 claims abstract description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000012528 membrane Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0307—Anchors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
Definitions
- the invention relates to a component, in particular a sensor element, with a substrate serving as a carrier and a silicon layer in which the component structure is formed.
- the component structure comprises at least one immovable element, in particular an electrode.
- the invention further relates to a method for producing such a component.
- SOI Silicon-on-InsuIator
- the structure of an SOI wafer generally comprises a monocrystalline silicon layer which is connected to a silicon substrate via a silicon oxide layer.
- the component structure is formed in the monocrystalline silicon layer.
- the silicon oxide layer under these structural elements is removed.
- the silicon oxide layer is therefore also referred to as a sacrificial layer.
- the opera layer is usually removed in an etching process in which other parts of the component structure are generally also under-etched. In practice, this proves to be problematic in particular with regard to immovable elements of the component structure, such as the electrodes.
- the silicon oxide located under the electrodes is also attacked during the sacrificial layer etching. So far, mechanical anchoring of the electrodes to the silicon substrate can only be guaranteed if the electrodes have certain minimum dimensions, so that they are not completely under-etched during the sacrificial layer etching.
- the present invention proposes a concept for anchoring immovable structural elements and in particular for anchoring electrodes for components whose component structure is formed in a silicon layer above a substrate serving as a carrier. This concept is particularly suitable for components that are made from SOI wafers.
- the immovable element of the component structure is mechanically connected to the substrate via at least one anchoring element made of an anchoring material and extending through the silicon layer.
- the anchoring element extends through the silicon layer and the sacrificial layer of the SOI wafer.
- at least one recess is produced in the silicon layer in the region of the surface of the immovable element, which extends through the entire silicon layer and the sacrificial layer as far as the substrate.
- the recess is then filled with an anchoring material, so that the immovable element is mechanically connected to the substrate via the anchoring element that is thereby created.
- immovable elements of the component structure can be mechanically connected to the substrate with the aid of anchoring elements.
- the only prerequisites for reliable anchoring are that the anchoring material is mechanically sufficiently stable and through the processes used in the manufacture of the component, e.g. sacrificial layer etching is not significantly attacked.
- the anchoring concept according to the invention enables the implementation of the smallest component structures, which are nevertheless firmly connected to the substrate, and therefore contributes to the miniaturization of components.
- the anchoring element is arranged essentially centrally to the surface of the immovable element.
- the silicon layer and, in the case of an SOI wafer, the sacrificial layer must be structured accordingly.
- Anisotropic etching processes are available for structuring the silicon layer, e.g. the trenching, because anisotropic etching processes can be used to create relatively deep but narrow recesses. In this way, the space requirement for the component structure can be minimized.
- the sacrificial layer can be structured in a corresponding manner by continuing the anisotropic etching process for structuring the silicon layer.
- the sacrificial layer can also be structured by isotropic etching, which proves to be particularly advantageous with regard to the design of the anchoring element.
- the edge region of the recess in the silicon layer is also undercut.
- an anchoring element is then created, which ensures a particularly stable anchoring of the immovable element both because of its barb structure and because of the enlarged connecting surface to the substrate.
- the anchoring material is deposited on the silicon layer after the silicon layer and the sacrificial layer have been structured.
- the anchoring material grows on the substrate in the region of the recess, so that the recess is filled and an anchoring element is created.
- the silicon layer is coated with anchoring material. This coating is generally at least partially removed again, taking into account the function of the structural elements of the component concerned.
- an electrically non-conductive anchoring material is advantageously used! selected to avoid a short circuit across the substrate of the component.
- silicon carbide SiC and in particular silicon-rich silicon nitride SiN have proven themselves as anchoring materials.
- the above-mentioned coating of anchoring material can either extend only over a region of the electrode surface around the anchoring element or also essentially over the entire electrode surface. In this case, however, at least one contact hole for the electrode must be formed in the coating. The contact hole is advantageously arranged outside the region of the anchoring element, so that the mechanical anchoring of the electrode and its electrical connection are spatially decoupled.
- a cap membrane is formed over the component structure, via which the electrodes of the component structure are electrically contacted.
- the cap membrane can also be mechanically connected to the substrate via the anchoring elements.
- FIG. 1 shows the perspective view of a sensor structure according to the invention with movable and immovable elements
- FIG. 2 shows a section through the sensor structure shown in FIG. 1 after application of a second sacrificial layer to produce a cap membrane
- 3 shows the sensor structure shown in FIG. 2 after structuring of the second sacrificial layer
- FIG. 4 shows the sensor structure shown in FIG. 3 after application and structuring of a membrane layer.
- FIG. 5 shows the sensor structure shown in FIG. 4 after the second sacrificial layer has been removed.
- the exemplary embodiment for a component according to the invention shown in the figures is a sensor element 1 for detecting accelerations.
- the sensor element 1 is produced from an SOI wafer, which comprises a monocrystalline silicon layer 2, which is connected via a sacrificial layer 3 to a substrate 4, here a silicon substrate.
- a silicon oxide layer serves as the sacrificial layer 3.
- the sensor structure is formed in the monocrystalline silicon layer 2 and comprises movable elements 5 which can be accelerated. The deflections of the movable elements 5 from their rest position are recorded with the aid of electrodes 6, which are immovable elements of the sensor structure.
- the electrodes 6 are each mechanically connected to the substrate 4 via an anchoring element 7.
- the anchoring elements 7 are each arranged essentially centrally to the electrode surface and extend through the entire silicon layer 2 and through the sacrificial layer 3 to the substrate 4.
- the anchoring elements 7 are formed from an electrically non-conductive anchoring material.
- silicon-rich silicon nitride SiN is used as the anchoring material, since it is also resistant to the HF vapor etching of the sacrificial layer 3 and anchoring elements made of SiN are mechanically sufficiently stable.
- the recesses for the anchoring elements 7 of the electrodes 6 are first produced in the silicon layer 2.
- An anisotropic etching process such as trenching, was used for this.
- the silicon oxide in the region of these recesses is then also removed.
- an anisotropic etching process was also used for this, since the edge regions of the recesses in the silicon layer 2 have not been under-etched.
- the sacrificial layer 3 in the region of the recesses can also be removed using an isotropic etching process, so that the edge regions of the recesses in the silicon layer 2 are under-etched.
- This variant of the method according to the invention can then be used to produce anchoring elements which extend in the area of the sacrificial layer 3 to below the silicon layer 2, that is to say have a barb structure.
- the recesses which then extend through the entire silicon layer 2 and the sacrificial layer 3 to the substrate 4, are now filled with the anchoring material.
- SiN is deposited on the silicon layer 2 in a deposition step, so that it grows up in the region of the recesses on the substrate 4. So much SiN must be deposited that the recesses are then closed.
- the silicon layer 2 is coated with anchoring material. In the exemplary embodiment shown here, this SiN coating 8 was structured such that it remains on the electrode surfaces.
- the electrically insulating SiN on the electrode surfaces enables an electrically insulated mechanical connection of the electrodes to a membrane layer subsequently produced, which actually serves for the electrical connection of the electrodes 6 of the sensor element 1, in order to make electrical contact between the electrodes 6 and a connection in the membrane layer
- a contact hole 9 is formed in the respective SiN coating 8 for each electrode 6.
- the contact hole 9 is not arranged in the region of the anchoring element 7 in order to decouple the electrical contacting and the mechanical anchoring of an electrode 6.
- Both the movable elements 5 and immovable elements, such as the electrodes 6, of the sensor structure are defined.
- the sacrificial layer etching the movable elements 5 are exposed.
- the sacrificial layer 3 is not only removed below the movable elements 5, but the electrodes 6 are also undercut.
- the anchoring material is resistant to the HF vapor etching with which the silicon oxide layer 3 is removed, the electrodes 6 remain mechanically firmly connected to the substrate 4 via the anchoring elements 7.
- the electrical connection of the electrodes 6 of a sensor element 1, as shown in FIG. 1, can take place via a thin-film membrane, which also seals the sensor structure.
- the electrical connection can also be implemented via a so-called cap membrane, which will be explained in more detail below with reference to FIGS.
- a second sacrificial layer 11 is applied to the sensor structure shown in FIG. 1, which in the present case is also formed from silicon oxide.
- the second sacrificial layer 11 closes the spaces between the individual elements 5 and 6, so that a closed surface is created, which is shown in FIG. 2.
- the second sacrificial layer .11 is then structured so that openings 12 and 13 are formed in the sacrificial layer 11 wherever the membrane layer is to come into direct contact with the silicon layer 2 (openings 12) or with the SiN coating 8 (openings 13) , Accordingly, openings 12 are shown in FIG. 3 in the area of the contact holes 9 and openings 13 in the area of the coated electrode surfaces.
- Poly-silicon can after Applying a starting layer can simply be grown epitaxially.
- the membrane layer 14 is then structured, which can also be achieved by trench etching in the case of a poly-silicon layer. With this structuring, on the one hand openings 15 are created for the sacrificial layer etching, in which at least the second sacrificial layer 11 and possibly also the first sacrificial layer 3 can be removed.
- openings 16 are created during the structuring of the membrane layer 14, through which the contact bushings between the functional silicon layer 2 and the membrane layer 14 in the region of the contact holes 9 are electrically insulated from the other regions of the membrane layer 14. These openings 16 are referred to below as insulation trenchs.
- the sensor element 1 with the membrane layer structured in this way is shown in FIG. 4.
- the second sacrificial layer 11 and, if not yet done, also the first sacrificial layer 3 can be removed again in order to expose the movable elements 5 of the sensor structure.
- HF steam etching is generally used for this.
- the anchoring material SiN is not attacked thereby, so that the electrodes 6 remain mechanically firmly connected to both the substrate 4 and the membrane layer 14 via the anchoring elements 7.
- 5 shows the sensor element 1 with a cap membrane 14 produced in this way.
- the cap membrane 14 is in direct contact with the electrodes 6 via the contact holes 9 and thus enables their electrical connection.
- the cap membrane 14 is mechanically connected to the substrate 4 via the SiN coating 8 of the electrode surfaces and the anchoring elements 7, so that the cap membrane 14 is also anchored.
- An electrode 6 which is electrically connected via the cap membrane 14 must be separated from the other regions of the cap membrane 14 by an insulation trench 16 in order to achieve the electrical separation of the electrode 6.
- the anchoring element 7 prevents the electrode 6 from being completely under-etched via the insulation trench 16 and other perforation holes and thereby becoming detached from the substrate 4.
- the concept according to the invention for components which are produced from SOI wafers enables the mechanical anchoring of immovable structural elements, such as e.g. Electrodes, with the substrate.
- immovable structural elements such as e.g. Electrodes
- anchoring elements which are introduced into the immovable structural elements and which consist of a material which is resistant to the sacrificial layer etching.
- the anchoring material must also be electrically insulating in order to enable spatial separation of the anchoring and electrical contact.
- Silicon-rich nitride or SiC have proven themselves as anchoring materials.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02807519A EP1515909A1 (de) | 2002-06-12 | 2002-12-11 | Bauelement und verfahren zu dessen herstellung |
JP2004513166A JP2005528994A (ja) | 2002-06-12 | 2002-12-11 | 構成エレメントならびに該構成エレメントを製造する方法 |
US10/518,065 US7382031B2 (en) | 2002-06-12 | 2002-12-11 | Component including a fixed element that is in a silicon layer and is mechanically connected to a substrate via an anchoring element and method for its manufacture |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10226028A DE10226028A1 (de) | 2002-06-12 | 2002-06-12 | Bauelement und Verfahren zu dessen Herstellung |
DE10226028.1 | 2002-06-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003106327A1 true WO2003106327A1 (de) | 2003-12-24 |
Family
ID=29594414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/004536 WO2003106327A1 (de) | 2002-06-12 | 2002-12-11 | Bauelement und verfahren zu dessen herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US7382031B2 (de) |
EP (1) | EP1515909A1 (de) |
JP (1) | JP2005528994A (de) |
DE (1) | DE10226028A1 (de) |
WO (1) | WO2003106327A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7115436B2 (en) | 2004-02-12 | 2006-10-03 | Robert Bosch Gmbh | Integrated getter area for wafer level encapsulated microelectromechanical systems |
WO2010147839A2 (en) * | 2009-06-18 | 2010-12-23 | Analog Devices, Inc. | Silicon-rich nitride etch stop layer for vapor hf etching in mems device fabrication |
US8455286B2 (en) * | 2010-10-29 | 2013-06-04 | Freescale Semiconductor, Inc. | Method of making a micro-electro-mechanical-systems (MEMS) device |
FR3051973B1 (fr) | 2016-05-24 | 2018-10-19 | X-Fab France | Procede de formation de transistors pdsoi et fdsoi sur un meme substrat |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780885A (en) * | 1992-12-28 | 1998-07-14 | Commissariat A L'energie Atomique | Accelerometers using silicon on insulator technology |
US6284567B1 (en) * | 1999-06-15 | 2001-09-04 | Samsung Electro-Mechanics Co., Ltd. | Microsensor, and packaging method therefor |
WO2001077009A1 (de) * | 2000-04-07 | 2001-10-18 | Robert Bosch Gmbh | Mikromechanisches bauelement und entsprechendes herstellungsverfahren |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5793107A (en) * | 1993-10-29 | 1998-08-11 | Vlsi Technology, Inc. | Polysilicon pillar heat sinks for semiconductor on insulator circuits |
US5877521A (en) * | 1998-01-08 | 1999-03-02 | International Business Machines Corporation | SOI active pixel cell design with grounded body contact |
JP4214584B2 (ja) | 1998-11-27 | 2009-01-28 | 株式会社デンソー | 半導体力学量センサおよびその製造方法 |
GB0006957D0 (en) * | 2000-03-23 | 2000-05-10 | Koninkl Philips Electronics Nv | A semiconductor device |
-
2002
- 2002-06-12 DE DE10226028A patent/DE10226028A1/de not_active Withdrawn
- 2002-12-11 US US10/518,065 patent/US7382031B2/en not_active Expired - Fee Related
- 2002-12-11 EP EP02807519A patent/EP1515909A1/de not_active Withdrawn
- 2002-12-11 WO PCT/DE2002/004536 patent/WO2003106327A1/de active Application Filing
- 2002-12-11 JP JP2004513166A patent/JP2005528994A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780885A (en) * | 1992-12-28 | 1998-07-14 | Commissariat A L'energie Atomique | Accelerometers using silicon on insulator technology |
US6284567B1 (en) * | 1999-06-15 | 2001-09-04 | Samsung Electro-Mechanics Co., Ltd. | Microsensor, and packaging method therefor |
WO2001077009A1 (de) * | 2000-04-07 | 2001-10-18 | Robert Bosch Gmbh | Mikromechanisches bauelement und entsprechendes herstellungsverfahren |
Also Published As
Publication number | Publication date |
---|---|
US20060054972A1 (en) | 2006-03-16 |
JP2005528994A (ja) | 2005-09-29 |
DE10226028A1 (de) | 2003-12-24 |
EP1515909A1 (de) | 2005-03-23 |
US7382031B2 (en) | 2008-06-03 |
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