WO2003096498A3 - Method for the passivation of the mirror-type surfaces of optical semi-conductor elements - Google Patents

Method for the passivation of the mirror-type surfaces of optical semi-conductor elements Download PDF

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Publication number
WO2003096498A3
WO2003096498A3 PCT/EP2003/004836 EP0304836W WO03096498A3 WO 2003096498 A3 WO2003096498 A3 WO 2003096498A3 EP 0304836 W EP0304836 W EP 0304836W WO 03096498 A3 WO03096498 A3 WO 03096498A3
Authority
WO
WIPO (PCT)
Prior art keywords
semi
mirror
conductor elements
passivation
conductor
Prior art date
Application number
PCT/EP2003/004836
Other languages
German (de)
French (fr)
Other versions
WO2003096498A2 (en
Inventor
Peter Ressel
Goetz Erbert
Original Assignee
Forschungsverbund Berlin Ev
Peter Ressel
Goetz Erbert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungsverbund Berlin Ev, Peter Ressel, Goetz Erbert filed Critical Forschungsverbund Berlin Ev
Priority to EP03727457A priority Critical patent/EP1514335B1/en
Priority to AU2003233311A priority patent/AU2003233311A1/en
Priority to JP2004504359A priority patent/JP2005525704A/en
Priority to US10/514,276 priority patent/US7338821B2/en
Publication of WO2003096498A2 publication Critical patent/WO2003096498A2/en
Publication of WO2003096498A3 publication Critical patent/WO2003096498A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent protective layer is applied in-situ, said layer being inert in relation to the material on the mirror-type surface and the remaining components of a natural oxide. In a preferred embodiment, the optical semi-conductor element is a GaAs-based semi-conductor laser, the reactive and low-energy medium is an atomic hydrogen and the protective layer is made of ZnSe.
PCT/EP2003/004836 2002-05-13 2003-05-08 Method for the passivation of the mirror-type surfaces of optical semi-conductor elements WO2003096498A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP03727457A EP1514335B1 (en) 2002-05-13 2003-05-08 Method for the passivation of the mirror-type surfaces of optical semi-conductor elements
AU2003233311A AU2003233311A1 (en) 2002-05-13 2003-05-08 Method for the passivation of the mirror-type surfaces of optical semi-conductor elements
JP2004504359A JP2005525704A (en) 2002-05-13 2003-05-08 Method for passivating mirror-type surface of optical semiconductor device
US10/514,276 US7338821B2 (en) 2002-05-13 2003-05-08 Method for the passivation of the mirror-faces surfaces of optical semi-conductor elements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10221952A DE10221952B4 (en) 2002-05-13 2002-05-13 Method for passivating the mirror surfaces of optical semiconductor components
DE10221952.4 2002-05-13

Publications (2)

Publication Number Publication Date
WO2003096498A2 WO2003096498A2 (en) 2003-11-20
WO2003096498A3 true WO2003096498A3 (en) 2004-07-29

Family

ID=29285497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/004836 WO2003096498A2 (en) 2002-05-13 2003-05-08 Method for the passivation of the mirror-type surfaces of optical semi-conductor elements

Country Status (6)

Country Link
US (1) US7338821B2 (en)
EP (1) EP1514335B1 (en)
JP (1) JP2005525704A (en)
AU (1) AU2003233311A1 (en)
DE (1) DE10221952B4 (en)
WO (1) WO2003096498A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007062050B4 (en) 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Semiconductor laser and method of making the semiconductor laser
DE102007058950A1 (en) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser has laser radiation that produces active layer, two waveguides and two coating layers, where active layer is embedded in former waveguide layer
DE102008018928A1 (en) * 2008-04-15 2009-10-22 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
EP2340169B1 (en) 2008-09-12 2014-11-05 J P Imaging Limited Improvements in or relating to printing
DE102009054912A1 (en) 2009-08-28 2011-03-10 M2K-Laser Gmbh High power diode laser and method of making a high power diode laser
US9912118B2 (en) 2010-06-28 2018-03-06 Iulian Basarab Petrescu-Prahova Diode laser type device
US9755402B2 (en) 2010-06-28 2017-09-05 Iulian Basarab Petrescu-Prahova Edge emitter semiconductor laser type of device with end segments for mirrors protection
US9972968B2 (en) * 2016-04-20 2018-05-15 Trumpf Photonics, Inc. Passivation of laser facets and systems for performing the same
DE102017112610A1 (en) 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser and operating method for such a semiconductor laser
DE102022118351A1 (en) * 2022-07-22 2024-01-25 Ams-Osram International Gmbh METHOD FOR MAKING AN EDGE EMISSION SEMICONDUCTOR LASER DIODE

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637862A2 (en) * 1993-08-05 1995-02-08 Hitachi, Ltd. Semiconductor laser device and method of fabricating the laser device
EP1006629A2 (en) * 1998-12-04 2000-06-07 Mitsubishi Chemical Corporation Compound semiconductor light emitting device
WO2001084680A1 (en) * 2000-05-03 2001-11-08 Corning Incorporated Passivation of semiconductor laser facets

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144634A (en) * 1989-09-07 1992-09-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
DE69006353T2 (en) * 1990-05-25 1994-06-23 Ibm Method and device for splitting semiconductor plates and cladding the split facets.
JPH06314842A (en) * 1993-04-28 1994-11-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light-emitting element and its manufacturing method
US5799028A (en) * 1996-07-18 1998-08-25 Sdl, Inc. Passivation and protection of a semiconductor surface
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur
JPH10107363A (en) * 1996-09-26 1998-04-24 Nec Corp Method for manufacturing semiconductor laser element
US5851849A (en) * 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
EP0898345A3 (en) * 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Compound semiconductor light emitting device and method of fabricating the same
US6590920B1 (en) * 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
US6734111B2 (en) * 2001-08-09 2004-05-11 Comlase Ab Method to GaAs based lasers and a GaAs based laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637862A2 (en) * 1993-08-05 1995-02-08 Hitachi, Ltd. Semiconductor laser device and method of fabricating the laser device
EP1006629A2 (en) * 1998-12-04 2000-06-07 Mitsubishi Chemical Corporation Compound semiconductor light emitting device
WO2001084680A1 (en) * 2000-05-03 2001-11-08 Corning Incorporated Passivation of semiconductor laser facets

Also Published As

Publication number Publication date
AU2003233311A8 (en) 2003-11-11
US20050287693A1 (en) 2005-12-29
DE10221952B4 (en) 2007-07-12
EP1514335B1 (en) 2006-09-13
EP1514335A2 (en) 2005-03-16
DE10221952A1 (en) 2003-11-27
JP2005525704A (en) 2005-08-25
WO2003096498A2 (en) 2003-11-20
US7338821B2 (en) 2008-03-04
AU2003233311A1 (en) 2003-11-11

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