WO2003088299A3 - Procede d'implantation d'un substrat et implanteur ionique permettant de mettre en oeuvre ledit procede - Google Patents

Procede d'implantation d'un substrat et implanteur ionique permettant de mettre en oeuvre ledit procede Download PDF

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Publication number
WO2003088299A3
WO2003088299A3 PCT/GB2003/001222 GB0301222W WO03088299A3 WO 2003088299 A3 WO2003088299 A3 WO 2003088299A3 GB 0301222 W GB0301222 W GB 0301222W WO 03088299 A3 WO03088299 A3 WO 03088299A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
raster
lines
implanting
dose uniformity
Prior art date
Application number
PCT/GB2003/001222
Other languages
English (en)
Other versions
WO2003088299A2 (fr
Inventor
Adrian Murrell
Bernard Harrison
Peter Edwards
Peter Kindersley
Takao Sakase
Marvin Farley
Shu Satoh
Geoffrey Ryding
Original Assignee
Applied Materials Inc
Cross Rupert Edward Blount
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/119,290 external-priority patent/US6956223B2/en
Priority claimed from US10/251,780 external-priority patent/US6908836B2/en
Application filed by Applied Materials Inc, Cross Rupert Edward Blount filed Critical Applied Materials Inc
Priority to KR1020047016179A priority Critical patent/KR100982850B1/ko
Priority to AU2003214435A priority patent/AU2003214435A1/en
Priority to EP03710007A priority patent/EP1493171A2/fr
Priority to JP2003585136A priority patent/JP4347068B2/ja
Publication of WO2003088299A2 publication Critical patent/WO2003088299A2/fr
Publication of WO2003088299A3 publication Critical patent/WO2003088299A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • X-Ray Techniques (AREA)

Abstract

Selon l'invention, un implanteur assure le balayage bidimensionnel d'un substrat relativement à un faisceau d'implantation de sorte que le faisceau trace une trame de lignes de balayage sur le substrat. Le courant du faisceau est mesuré au niveau de points de demi-tour situés hors du substrat et la valeur du courant est utilisée pour contrôler la vitesse de balayage rapide subséquente de manière à compenser l'effet d'une quelconque variation au niveau du courant du faisceau sur l'uniformité de dose dans la direction de balayage lent. Le balayage peut produire une trame de lignes de balayage parallèles, espacées de manière uniforme, ne se croisant pas et l'espacement entre les lignes est sélectionné pour assurer une uniformité de dose appropriée.
PCT/GB2003/001222 2002-04-10 2003-03-21 Procede d'implantation d'un substrat et implanteur ionique permettant de mettre en oeuvre ledit procede WO2003088299A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020047016179A KR100982850B1 (ko) 2002-04-10 2003-03-21 기판을 주입하는 방법 및 상기 방법을 수행하기 위한 이온 주입기
AU2003214435A AU2003214435A1 (en) 2002-04-10 2003-03-21 A method of implanting a substrate and an ion implanter for performing the method
EP03710007A EP1493171A2 (fr) 2002-04-10 2003-03-21 Procede d'implantation d'un substrat et implanteur ionique permettant de mettre en oeuvre ledit procede
JP2003585136A JP4347068B2 (ja) 2002-04-10 2003-03-21 基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/119,290 2002-04-10
US10/119,290 US6956223B2 (en) 2002-04-10 2002-04-10 Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US10/251,780 US6908836B2 (en) 2002-09-23 2002-09-23 Method of implanting a substrate and an ion implanter for performing the method
US10/251,780 2002-09-23

Publications (2)

Publication Number Publication Date
WO2003088299A2 WO2003088299A2 (fr) 2003-10-23
WO2003088299A3 true WO2003088299A3 (fr) 2004-01-08

Family

ID=29253953

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/001222 WO2003088299A2 (fr) 2002-04-10 2003-03-21 Procede d'implantation d'un substrat et implanteur ionique permettant de mettre en oeuvre ledit procede

Country Status (7)

Country Link
EP (1) EP1493171A2 (fr)
JP (1) JP4347068B2 (fr)
KR (1) KR100982850B1 (fr)
CN (1) CN100401449C (fr)
AU (1) AU2003214435A1 (fr)
TW (1) TWI319894B (fr)
WO (1) WO2003088299A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
GB2409928B (en) * 2004-01-09 2007-03-21 Applied Materials Inc Improvements relating to ion implantation
US7473909B2 (en) * 2006-12-04 2009-01-06 Axcelis Technologies, Inc. Use of ion induced luminescence (IIL) as feedback control for ion implantation
TW201133536A (en) * 2010-03-16 2011-10-01 Kingstone Semiconductor Co Ltd Ions injection system and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
WO2000005744A1 (fr) * 1998-07-21 2000-02-03 Applied Materials, Inc. Moniteur ionique pour faisceau d'implantation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4775796A (en) * 1987-01-06 1988-10-04 Purser Kenneth H Treating workpieces with beams
US5886356A (en) * 1997-03-17 1999-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic supervision system on the ion beam map for ion implantation process
JP3341749B2 (ja) * 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
WO2000005744A1 (fr) * 1998-07-21 2000-02-03 Applied Materials, Inc. Moniteur ionique pour faisceau d'implantation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1493171A2 *

Also Published As

Publication number Publication date
CN100401449C (zh) 2008-07-09
KR100982850B1 (ko) 2010-09-16
EP1493171A2 (fr) 2005-01-05
CN1647236A (zh) 2005-07-27
TW200402096A (en) 2004-02-01
JP4347068B2 (ja) 2009-10-21
AU2003214435A1 (en) 2003-10-27
AU2003214435A8 (en) 2003-10-27
KR20040097335A (ko) 2004-11-17
JP2005522843A (ja) 2005-07-28
TWI319894B (en) 2010-01-21
WO2003088299A2 (fr) 2003-10-23

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