WO2003079443A2 - Manufacturing methods for resistance variable material cells - Google Patents
Manufacturing methods for resistance variable material cells Download PDFInfo
- Publication number
- WO2003079443A2 WO2003079443A2 PCT/US2003/008148 US0308148W WO03079443A2 WO 2003079443 A2 WO2003079443 A2 WO 2003079443A2 US 0308148 W US0308148 W US 0308148W WO 03079443 A2 WO03079443 A2 WO 03079443A2
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- WO
- WIPO (PCT)
- Prior art keywords
- silver
- layer
- selenide
- electrode
- memory cell
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 110
- 230000015654 memory Effects 0.000 claims abstract description 106
- KDSXXMBJKHQCAA-UHFFFAOYSA-N disilver;selenium(2-) Chemical compound [Se-2].[Ag+].[Ag+] KDSXXMBJKHQCAA-UHFFFAOYSA-N 0.000 claims abstract description 90
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000005387 chalcogenide glass Substances 0.000 claims abstract description 65
- 239000011521 glass Substances 0.000 claims abstract description 28
- 230000037361 pathway Effects 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims description 104
- 229910052709 silver Inorganic materials 0.000 claims description 95
- 239000004332 silver Substances 0.000 claims description 95
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 65
- -1 silver chalcogenide Chemical class 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 17
- 238000005240 physical vapour deposition Methods 0.000 claims description 11
- 239000011669 selenium Substances 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 8
- YRXWPCFZBSHSAU-UHFFFAOYSA-N [Ag].[Ag].[Te] Chemical compound [Ag].[Ag].[Te] YRXWPCFZBSHSAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052946 acanthite Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910001923 silver oxide Inorganic materials 0.000 claims description 4
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 claims description 4
- 229940056910 silver sulfide Drugs 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 claims 23
- 210000005056 cell body Anatomy 0.000 claims 8
- 230000005684 electric field Effects 0.000 claims 5
- 238000001704 evaporation Methods 0.000 claims 2
- VDNSGQQAZRMTCI-UHFFFAOYSA-N sulfanylidenegermanium Chemical compound [Ge]=S VDNSGQQAZRMTCI-UHFFFAOYSA-N 0.000 claims 2
- 230000014759 maintenance of location Effects 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000011149 active material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GNWCVDGUVZRYLC-UHFFFAOYSA-N [Se].[Ag].[Ag] Chemical compound [Se].[Ag].[Ag] GNWCVDGUVZRYLC-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001565 modulated differential scanning calorimetry Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 150000004771 selenides Chemical class 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
- H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Definitions
- the present invention is generally related to memory technology.
- the present invention relates to memory devices formed using chalcogenide glasses. Description of the Related Art
- RAM random access memory
- DRAM dynamic random access memory
- SRAM static random access memory
- nonvolatile memory devices In contrast to the potential loss of data encountered in volatile memory devices, nonvolatile memory devices retain data when power is removed. Examples of nonvolatile memory devices include read only memory (ROM), programmable read only memory (PROM), erasable programmable read only memory (EPROM), electrically erasable programmable read only memory (EEPROM), and the like.
- ROM read only memory
- PROM programmable read only memory
- EPROM erasable programmable read only memory
- EEPROM electrically erasable programmable read only memory
- U.S. Patent No. 6,084,796 to Kozicki, et al., entitled “Programmable metallization cell structure and method of making same,” discloses another type of nonvolatile memory device known as a programmable conductor memory cell or a programmable metallization cell (PMC). Such memory cells can be integrated into a memory device, which is known as a programmable conductor random access memory (PCRAM). Additional applications for a programmable metallization cell include use as a programmable resistance and a programmable capacitance.
- One conventional technique for producing the programmable conductor memory cell applies silver (Ag) photodoping to a chalcogenide glass, such as germanium selenide (Ge ⁇ Se ⁇ ) ).
- Embodiments of the invention overcome the disadvantages of the prior art.
- Embodiments of the invention include processes that advantageously allow the production of resistance variable material memory cells at relatively high rates and with relatively high yields.
- the resistance variable memory cells further advantageously feature improvements in switching speed, improvements in switching consistency, and improvements in data retention and operational temperature ranges relative to conventional programmable conductor memory cells.
- embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of silver chalcogenide and glass layers.
- memory cells can be fabricated without the relatively precise control of silver (Ag) and glass thicknesses that are necessary in a conventional photodoping process to maintain an appropriate amount of silver (Ag) in the glass without inducing crystallization in the memory cell.
- embodiments of the present invention can advantageously form memory cells on rigid glasses, such as Ge 4 oSe6o, which would normally incorporate silver (Ag) into the glass backbone making it unavailable for memory switching. These glasses have an additional advantage of having higher glass transition temperatures.
- silver (Ag) is not added directly to germanium selenide (Ge ⁇ Se(i.j)).
- germanium selenide Ge ⁇ Se(i.j)
- adherence of a layer of silver (Ag) to a layer of germanium selenide (Ge ⁇ Seo * )) is advantageously not a concern.
- One embodiment according to the present invention includes a memory cell with a layer of a silver chalcogenide and a layer of a chalcogenide glass, such as germanium selenide (Ge ⁇ Seo- * )).
- the layers of silver chalcogenide and chalcogenide glass are formed between two electrodes, which are also formed.
- the electrodes can be formed from materials such as tungsten (W), tungsten nitride (WN), titanium (Ti), and the like.
- the silver chalcogenide can correspond to a variety of materials, such as silver selenide, silver sulfide, silver telluride, and silver oxide.
- the chalcogenide glass can correspond to a variety of materials, such as germanium selenide germanium sulfide (Ge x S(i- X )) and arsenic selenide (As.tSe ).
- Another embodiment according to the present invention includes a memory cell with a layer of silver (Ag), a layer of chalcogenide glass, such as germanium selenide and a layer of silver selenide disposed between two electrodes.
- the layers are arranged such that the chalcogenide glass is disposed between the layer of silver (Ag) and the layer of silver selenide.
- the chalcogenide glass can be selected from a variety of glasses such as Ge 4 oSe ⁇ o and Ge 2 sSe75.
- the silver selenide is slightly poor in silver (Ag) and the presence of silver (Ag) in the silver (Ag) layer allows the memory cell to function as intended.
- Another embodiment according to the present invention includes a memory cell with co- deposited silver selenide and germanium selenide (Ge ⁇ Se ⁇ . * )).
- the memory cell can correspond to non-volatile memories or to volatile memories.
- One embodiment according to the present invention is a process of fabricating a memory.
- the process forms an active layer on a bottom electrode.
- the process forms the active layer, which includes a silver chalcogenide, such as silver selenide, and a selenium-including glass, such as germanium selenide, substantially in the absence of an ultraviolet (UV) photodoping step.
- the process also forms a top electrode layer such that a voltage applied between the top electrode layer and the bottom electrode layer creates a conductive pathway between the two electrodes, or disrupts a conductive pathway that had connected the two electrodes.
- PVD physical vapor deposition
- the PVD process fabricates the active layer by co-depositing silver chalcogenide, such as silver selenide, and a chalcogenide glass, such as germanium selenide (Ge ⁇ rSe(i- )), on a bottom electrode at substantially the same time.
- the process forms a top electrode layer on the active layer such that a voltage or difference in electric potential applied between the top electrode layer and the bottom electrode can form or disrupt a conductive pathway within the active layer.
- Another embodiment according to the present invention includes a deposition process to form an active layer in a substrate assembly by forming a layer of a chalcogenide glass and forming a layer of silver selenide. The layers are disposed between a top electrode layer and a bottom electrode layer.
- the chalcogenide glass is germanium selenide (Ge ⁇ Se ⁇ . * )), and there are no other sources of silver (Ag) other than silver selenide.
- the chalcogenide glass is germanium selenide (Ge Se(i- )) and at least one of the electrodes is silver (Ag).
- Another embodiment according to the present invention includes a process that forms an active layer of a memory cell by forming a layer of both germanium selenide (Ge ⁇ Se - * )) and silver (Ag) and forming a layer of silver selenide.
- Figure 1 illustrates a process according to an embodiment of the invention of forming an active layer by layering silver selenide and a chalcogenide glass.
- Figure 2 illustrates a process according to an embodiment of the invention of forming an active layer by co-depositing silver selenide and a chalcogenide glass.
- Figure 3 illustrates a process according to an embodiment of the invention of forming an active layer by depositing a layer of germanium selenide (Ge ⁇ Se ⁇ . * )) and silver (Ag) and a layer of silver selenide.
- Figure 4 illustrates a memory cell with an active layer formed by layering silver selenide and a chalcogenide glass.
- Figure 5 illustrates a memory cell with an active layer formed by co-depositing silver selenide and a chalcogenide glass.
- Figure 6 illustrates a memory cell with an active layer formed by layering silver (Ag), layering a chalcogenide glass, and layering silver selenide.
- silver selenide and germanium selenide While illustrated in the context of silver selenide and germanium selenide, the skilled artisan will appreciate that the principles and advantages described herein are applicable to other types of silver chalcogenides and chalcogenide glasses.
- other silver chalcogenides include silver sulfide, silver telluride, and silver oxide.
- Another chalcogenide glass includes arsenic selenide
- regions of silver selenide within germanium selenide are the source of the memory switching characteristic of silver (Ag) ultraviolet (UV) photodoped germanium selenide glasses in a resistance variable material memory cell.
- MDSC Modulated Differential Scanning Calorimetry
- Figure 1 illustrates a process 100 according to an embodiment of the invention of forming an active layer for a memory cell by layering silver selenide and a chalcogenide glass.
- silver selenide includes stoichiometric silver selenide (Ag 2 Se), silver-rich silver selenide (Ag2+ * Se), and silver-poor silver selenide (Ag 2 - Se).
- chalcogenide glass includes glasses with an element from group VIA (or group 16) of the periodic table.
- Group VIA elements include sulfur (S), selenium (Se), tellurium (Te), polonium (Po), and oxygen (O).
- the process advantageously eliminates the UV photodoping step.
- a resistance variable material cell such as the "PROM configured MDM" described by Kozicki, et al., in U.S. Patent No. 6,084,796, do not require local transistors as part the storage element and can thus be formed on a variety of substrates and not just semiconductors.
- a resistance variable material cell can be formed on other materials such as a plastic substrate.
- the substrate assembly should be electrically insulating so that a difference in electric potential can be applied between electrodes to form or to disrupt a conductive pathway in the cell.
- the process can also form an insulating layer, such as a layer of silicon oxide (Si0 2 ), to electrically insulate the resistance variable material cell.
- the substrate assembly is silicon to facilitate the integration of the fabricated memory cell with electronic devices such as switches or transistors.
- the process forms 110 a conductive film on the substrate assembly to form a first electrode of the memory cell.
- the material used to form the conductive film can be selected from a variety of conductive materials.
- the process deposits tungsten (W) as the first electrode.
- the process advances from forming 110 the first electrode to forming 120 a silver selenide layer.
- the process forms 120 a film or layer of silver selenide onto the first electrode.
- the process first forms 120 a silver selenide layer and then forms 130 a germanium selenide (Ge ⁇ Se ⁇ . * )) layer.
- the process first forms 130 a germanium selenide layer (Ge S ⁇ (i- )) and then forms 120 a silver selenide layer.
- a variety of processes can be used to form 120 the layer of silver selenide.
- PVD physical vapor deposition
- evaporative deposition and sputtering are used to form 120 the layer of silver selenide.
- Other processes such as chemical vapor deposition (CVD), co-evaporation, and depositing a layer of selenide (Se) above a layer of silver (Ag) to form silver selenide can also be used.
- silver selenide is directly deposited, thereby obviating the need to photodope the substrate with UV radiation.
- UV photodoping can still be used.
- the direct forming of a layer of silver selenide can still advantageously reduce the intensity and/or the duration of the applied UV radiation.
- the silver selenide layer can be formed 120 prior to the forming 130 of the chalcogenide layer as shown in Figure 1. The process advances from forming 120 the silver selenide layer to forming 130 the chalcogenide layer.
- the process forms 130 a layer of a chalcogenide glass.
- the chalcogenide glass can be germanium selenide (Ge Se(i-jr)), arsenic selenide (As2Se 3 ), and the like.
- the chalcogenide glass formed is germanium selenide (Ge ⁇ Se - * )).
- x is in a range of about 0.2 to about 0.43.
- An exemplary chalcogenide glass is Ge 4 oSe6o.
- the process forms 120 the silver selenide layer, and the process forms 130 the layer of germanium selenide (Ge.rSe(
- the silver selenide layer is about 400 A thick
- the germanium selenide (Ge * Se(i- ⁇ r)) layer is a layer of Ge4oSe ⁇ o that is about 250 A thick.
- the process forms 140 a second electrode of the resistance variable material cell, and the process ends.
- the first electrode and the second electrode can correspond to, for example, a top electrode and a bottom electrode, respectively, or to side electrodes.
- the layer of silver selenide formed 120 by the process and the layer of chalcogenide glass formed 130 by the process are disposed between the first electrode and the second electrode. When an electric potential is applied between the first electrode and the second electrode, a conductive pathway is formed or is disrupted in the layer of silver selenide and the layer of chalcogenide glass.
- FIG. 2 illustrates another process 200 according to an embodiment of the invention of forming an active layer for a memory cell.
- the active layer is formed by depositing silver selenide and a chalcogenide glass substantially in a single step.
- the process advantageously eliminates the UV photodoping step.
- the process illustrated in Figure 2 can also be applied to a broad variety of substrate assemblies as described earlier in connection with Figure 1.
- the process forms 210 a conductive film on the substrate assembly to form a first electrode of the memory cell.
- the material used to form the conductive film can be selected from a variety of conductive materials as described earlier in connection with Figure 1.
- the process advances from forming 210 the first electrode to forming 220 an active layer.
- the process forms 220 the active film in which a conductive pathway forms and/or is disrupted.
- the illustrated process co-deposits 220 silver selenide and a chalcogenide glass to form 220 the active layer.
- the chalcogenide glass can include materials such as germanium selenide (Ge ⁇ Seo- * )), arsenic selenide (As2Se 3 ), and the like.
- the chalcogenide glass is germanium selenide (GejrSe(i. X )), where x is between about 0.2 and about 0.43.
- the thickness of the active layer formed by the process can vary in a relatively broad range.
- the process forms 220 the active layer to a thickness between about 500 A and about
- the process forms 220 the active layer to a thickness between about 500
- the process forms 220 the active layer to a thickness of about 500 Angstroms (A).
- the illustrated process can form an active layer without silver (Ag) photodoping with UV radiation.
- UV photodoping is still used.
- the process advances from forming 220 the active layer to forming 230 a second electrode.
- the process forms 230 a conductive film on the substrate assembly to form a second electrode of the memory cell, and the process ends.
- the active layer formed 220 is disposed between the first electrode and the second electrode.
- a conductive pathway is formed or disrupted depending on the polarity of the applied electric potential.
- the formation and/or disruption of the conductive pathway is stable and can be detected as a change in impedance.
- Figure 3 illustrates a process 300 according to an embodiment of the invention of forming an active layer of a memory cell by depositing a layer of germanium selenide and silver (Ag), and a layer of silver selenide.
- x is in a range of about 0.2 to about 0.43.
- the process forms 310 a conductive film on a substrate assembly to form a first electrode of the memory cell.
- the material used to form the conductive film can be selected from a variety of conductive materials.
- the process deposits tungsten (W) as the first electrode.
- W tungsten
- the process advances from forming 310 the first electrode to forming 320 a film or layer of germanium selenide and silver (Ag).
- the process forms 320 the layer(s) of germanium selenide (Ge ⁇ Se ⁇ - * )) and silver (Ag) onto the first electrode.
- the process can form the layer(s) of germanium selenide (Ge ⁇ Seo- * )) and silver (Ag) in one layer or as separate layers.
- the process co-deposits germanium selenide (Ge ⁇ Se ⁇ . * )) and silver (Ag) to form 320 the layer.
- the process forms 320 the layer(s) of germanium selenide (Ge ⁇ Seo- * )) and silver (Ag) by depositing separate layers of germanium selenide (Ge ⁇ Se ⁇ )) and silver (Ag).
- One embodiment according to the invention forms a relatively thin layer of silver (Ag), and then forms the layer of germanium selenide (Ge Se(i- )).
- the relatively thin layer of silver (Ag) is about 50 A thick.
- a layer of silver selenide should not be formed adjacent to the relatively thin layer of silver (Ag).
- the process forms 320 the film or layer of germanium selenide (Ge ⁇ Seo-. * )) and silver (Ag) to a thickness between about 250 A and 1000 A.
- the process forms 320 the layer(s) of both germanium selenide (Ge ⁇ Seo- * )) and silver (Ag) and then forms 330 a layer of silver selenide.
- the process forms 330 the layer of silver selenide to a thickness between about 300 A and about 1000 A. It will be understood by one of ordinary skill in the art that in another embodiment, the process first forms 330 the silver selenide layer and then forms 320 the layer(s) of germanium selenide (Ge ⁇ rSe ( i- ) ) and silver (Ag).
- the deposition of the relatively thin film of silver (Ag) advantageously allows the silver selenide layer to be formed slightly silver-poor because an extra amount of silver (Ag) is available to the memory cell.
- a variety of processes can be used to form 320 the layer(s) of germanium selenide (Ge ⁇ Seo- x) ) and silver (Ag).
- PVD physical vapor deposition
- evaporative deposition and sputtering are used to form 320 the layer of germanium selenide (Ge Se(i- )) and silver (Ag).
- Other processes, such as chemical vapor deposition (CVD) and co-evaporation can also be used.
- the process advances from forming 320 the layer of germanium selenide (Ge ⁇ Se ⁇ - * )) and silver (Ag) to forming 330 a layer of silver selenide.
- the process forms 330 a layer of a silver selenide.
- the layer of silver selenide should be formed on the germanium selenide (Ge.rSe(i-;c)) layer or on a co-deposited layer of silver (Ag) and germanium selenide (Ge ⁇ Seo- * )), but not directly on a silver (Ag) layer.
- silver selenide is directly deposited and a UV photodoping step is not needed.
- the process forms 340 a second electrode of the memory cell, and the process ends. It will be understood by one of ordinary skill in the art that the first electrode and the second electrode can correspond to, for example, a top electrode and a bottom electrode, respectively, or to side electrodes.
- the layer(s) of germanium selenide (Ge ⁇ Se ⁇ . * )) and silver (Ag) formed 320 by the process and the layer of silver selenide formed 330 by the process are disposed between the first electrode and the second electrode.
- a conductive pathway is formed or is disrupted in the layer of silver selenide and the layer(s) of germanium selenide (Ge ⁇ Se - * )) and silver (Ag).
- the stored information can correspond to programmable resistances and to binary data storage.
- a first state corresponds to a relatively low resistance between the electrodes and a second state corresponds to a relatively high resistance between the electrodes.
- the polarity of the electrodes can be reversed to alter the conductive pathway, thereby allowing the memory cell to be erased and reprogrammed.
- Figure 4 illustrates one embodiment according to the present invention of a memory cell 400 with an active layer formed by layering silver selenide and a chalcogenide glass.
- the illustrated memory cell 400 includes a first electrode 402, a first body layer 404, a second body layer 406, an insulator 408, and a second electrode 410.
- the first electrode 402 is formed on and in contact with a substrate assembly.
- the substrate assembly is silicon, and the first electrode 402 is coupled to a conductor such as a crosspoint so that the memory cell 400 can be programmed and read.
- the memory cell 400 can be formed on a variety of substrate materials and not just semiconductors such as silicon.
- the memory cell 400 can be formed on a plastic substrate.
- the first electrode 402 can be made from a variety of materials and from combinations of materials.
- the first electrode 402 can be made from tungsten (W), tungsten nitride (WN), polysilicon, and the like.
- the first body layer 404 and the second body layer 406 form a body of the memory cell 400.
- the first body layer 404 is formed on the first electrode 402
- the second body layer 406 is formed on the first body layer 404.
- the first body layer 404 is a layer of silver selenide and the second body layer 406 is a layer of a chalcogenide glass such as germanium selenide
- the first body layer 404 is the layer of chalcogenide glass
- the second body layer 406 is the layer of silver selenide.
- the insulator 408 surrounds the body formed by the first body layer 404 and the second body layer 406.
- the insulator 408 insulates the body from the bodies of other memory cells and also prevents the undesired diffusion of active material.
- the insulator 408 can be formed from a variety of materials such as silicon nitride (Si 3 N4). Of course, the insulator 408 can be formed in multiple steps and can include multiple structures.
- the second electrode 410 is formed on the second body layer 406 and on the insulator 408.
- the second electrode 410 can be formed from a variety of materials such as silver (Ag), titanium (Ti), tungsten (W), tungsten nitride (WN), and the like.
- An electric potential applied between the first electrode 402 and the second electrode 410 causes the formation or alteration of conductive pathways in the body of the memory cell 400.
- Figure 5 illustrates one embodiment according to the present invention of a memory cell
- the illustrated memory cell 500 with an active layer formed by co-depositing silver selenide and a chalcogenide glass.
- the illustrated memory cell 500 includes a first electrode 502, an active layer 506, an insulator 508, and a second electrode 510.
- the first electrode 502 is formed on a substrate assembly.
- the substrate assembly can correspond to a variety of materials including plastic and silicon.
- the first electrode 502 is coupled to a conductor such as a crosspoint so that the memory cell 500 can be programmed and read.
- the first electrode 502 can be made from a variety of materials and from combinations of materials.
- the active layer 506 is formed on the first electrode 502.
- the active layer 506 is a co-deposited layer of silver selenide and a chalcogenide glass such as germanium selenide (Ge ⁇ Seo- * )).
- the insulator 508 surrounds the active layer 506.
- the insulator 508 insulates the active layer 506 from other memory cells and also prevents the undesired diffusion of active material.
- the insulator 508 can be formed from a variety of materials such as silicon nitride (Si 3 N4).
- the second electrode 510 is formed on the active layer 506 and on the insulator 508.
- the second electrode 510 can be formed from a variety of materials such as silver (Ag), titanium (Ti), tungsten (W), tungsten nitride (WN), and the like.
- An electric potential applied between the first electrode 502 and the second electrode 510 causes conductive pathways in the active layer 506 to form or to disrupt in response to the applied electric potential.
- Figure 6 illustrates one embodiment according to the present invention of a memory cell 600 with an active layer formed by layering silver (Ag), layering a chalcogenide glass, and layering silver selenide.
- the illustrated memory cell 600 includes a first electrode 602, a first body layer
- the first electrode 602 is formed on and in contact with a substrate assembly.
- the substrate assembly is silicon, and the first electrode 602 is coupled to a conductor such as a crosspoint so that the memory cell 600 can be programmed and read.
- 602 can be made from a variety of materials and from combinations of materials such as tungsten
- the first body layer 603 When the memory cell 600 is fabricated, the first body layer 603, the second body layer
- the first body layer 603 is formed on the first electrode 602
- the second body layer 604 is formed on the first body layer 603
- the third body layer 606 is formed on the second body layer 604.
- the first body layer 603 is a layer of silver (Ag)
- the second body layer 604 is a layer of a chalcogenide glass such as germanium selenide (Ge ⁇ Seo * )
- the third body layer 606 is a layer of silver selenide.
- the first body layer 603 is the layer of silver selenide
- the second body layer 604 is the layer of chalcogenide glass
- the third body layer 606 is the layer of silver (Ag).
- the insulator 608 surrounds the body formed by the first body layer 603, the second body layer 604, and the third body layer 606.
- the insulator 608 insulates the body from the bodies of other memory cells and also prevents the undesired diffusion of active material.
- the insulator 608 can be formed from a variety of materials such as silicon nitride (Si 3 N 4 ). Of course, the insulator 608 can be formed in multiple steps and can include multiple structures.
- the second electrode 610 is formed on the third body layer 606 and on the insulator 608.
- the second electrode 610 can be formed from a variety of materials such as tungsten (W).
- An electric potential applied between the first electrode 602 and the second electrode 610 causes the formation or alteration of conductive pathways in the body of the memory cell 600.
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Abstract
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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EP03716643A EP1483795B1 (en) | 2002-03-14 | 2003-03-12 | Manufacturing methods for resistance variable material cells |
DE60333175T DE60333175D1 (en) | 2002-03-14 | 2003-03-12 | MANUFACTURING METHOD FOR CELLS WITH RESISTANT MATERIAL |
JP2003577339A JP4824278B2 (en) | 2002-03-14 | 2003-03-12 | Variable resistance material cell and manufacturing method thereof |
AT03716643T ATE472826T1 (en) | 2002-03-14 | 2003-03-12 | PRODUCTION PROCESS FOR CELLS WITH RESISTANCE-CHANGING MATERIAL |
AU2003220344A AU2003220344A1 (en) | 2002-03-14 | 2003-03-12 | Manufacturing methods for resistance variable material cells |
KR1020047014483A KR100561254B1 (en) | 2002-03-14 | 2003-03-12 | Manufacturing methods for resistance variable material cells |
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US10/100,450 US6849868B2 (en) | 2002-03-14 | 2002-03-14 | Methods and apparatus for resistance variable material cells |
US10/100,450 | 2002-03-14 |
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WO2003079443A2 true WO2003079443A2 (en) | 2003-09-25 |
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US (2) | US6849868B2 (en) |
EP (1) | EP1483795B1 (en) |
JP (2) | JP4824278B2 (en) |
KR (1) | KR100561254B1 (en) |
CN (1) | CN100517791C (en) |
AT (1) | ATE472826T1 (en) |
AU (1) | AU2003220344A1 (en) |
DE (1) | DE60333175D1 (en) |
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WO (1) | WO2003079443A2 (en) |
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US20040149980A1 (en) | 2004-08-05 |
CN1842924A (en) | 2006-10-04 |
WO2003079443A3 (en) | 2004-04-01 |
AU2003220344A8 (en) | 2003-09-29 |
DE60333175D1 (en) | 2010-08-12 |
KR100561254B1 (en) | 2006-03-15 |
ATE472826T1 (en) | 2010-07-15 |
KR20040091743A (en) | 2004-10-28 |
EP1483795A2 (en) | 2004-12-08 |
JP5005670B2 (en) | 2012-08-22 |
TW200307365A (en) | 2003-12-01 |
US7030405B2 (en) | 2006-04-18 |
JP2005521245A (en) | 2005-07-14 |
US20030173558A1 (en) | 2003-09-18 |
JP2009147350A (en) | 2009-07-02 |
TWI248673B (en) | 2006-02-01 |
AU2003220344A1 (en) | 2003-09-29 |
JP4824278B2 (en) | 2011-11-30 |
US6849868B2 (en) | 2005-02-01 |
EP1483795B1 (en) | 2010-06-30 |
CN100517791C (en) | 2009-07-22 |
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