WO2003077414A8 - Leistungsverstärker - Google Patents

Leistungsverstärker

Info

Publication number
WO2003077414A8
WO2003077414A8 PCT/EP2003/002533 EP0302533W WO03077414A8 WO 2003077414 A8 WO2003077414 A8 WO 2003077414A8 EP 0302533 W EP0302533 W EP 0302533W WO 03077414 A8 WO03077414 A8 WO 03077414A8
Authority
WO
WIPO (PCT)
Prior art keywords
matching
relates
power amplifier
matching network
power mosfets
Prior art date
Application number
PCT/EP2003/002533
Other languages
English (en)
French (fr)
Other versions
WO2003077414A3 (de
WO2003077414A2 (de
Inventor
Joachim Ziegler
Original Assignee
Huettinger Elektronik Gmbh
Joachim Ziegler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huettinger Elektronik Gmbh, Joachim Ziegler filed Critical Huettinger Elektronik Gmbh
Publication of WO2003077414A2 publication Critical patent/WO2003077414A2/de
Publication of WO2003077414A3 publication Critical patent/WO2003077414A3/de
Publication of WO2003077414A8 publication Critical patent/WO2003077414A8/de
Priority to US10/937,395 priority Critical patent/US7046088B2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Verfahren und Vorrichtung zur Leistungsverstärkung mit einem modifiziertem Klasse E-Verstärker, bei dem ein spezielles Anpassungsnetzwerk sowohl eine Bandpassfilterung für die Grundwelle als auch eine Widerstandsanpassung an die Last vornimmt und sich zugleich durch seine Bauart als Anpassungsnetzwerk zum Zusammenschalten mehrerer nicht identisch gleicher Leistungs-MOS-FETs eignet sowie eine solche Anpassungsschaltung sowie eine geeignete besonders verlustarme Treiberschaltung zur Ansteuerung solcher Leistungs-MOS-FETs
PCT/EP2003/002533 2002-03-12 2003-03-12 Leistungsverstärker WO2003077414A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/937,395 US7046088B2 (en) 2002-03-12 2004-09-10 Power amplifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10211609A DE10211609B4 (de) 2002-03-12 2002-03-12 Verfahren und Leistungsverstärker zur Erzeugung von sinusförmigen Hochfrequenzsignalen zum Betreiben einer Last
DE10211609.1 2002-03-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/937,395 Continuation US7046088B2 (en) 2002-03-12 2004-09-10 Power amplifier

Publications (3)

Publication Number Publication Date
WO2003077414A2 WO2003077414A2 (de) 2003-09-18
WO2003077414A3 WO2003077414A3 (de) 2004-04-08
WO2003077414A8 true WO2003077414A8 (de) 2004-04-29

Family

ID=27797815

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/002533 WO2003077414A2 (de) 2002-03-12 2003-03-12 Leistungsverstärker

Country Status (3)

Country Link
US (1) US7046088B2 (de)
DE (1) DE10211609B4 (de)
WO (1) WO2003077414A2 (de)

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GB2426134B (en) * 2005-05-12 2009-06-10 Univ Bristol Amplifiers
DE102005050622A1 (de) 2005-10-21 2007-05-03 Infineon Technologies Ag Sendeendstufe mit einstellbarer Ausgangsleistung und Verfahren zum Verstärken eines Signals in einer Sendeendstufe
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DE102007026784A1 (de) * 2007-06-09 2008-12-24 Isle Gmbh Verfahren zur Bestimmung von Kapazitäts-Spannungskennlinien elektronischer Schaltelemente
DE112007003667A5 (de) * 2007-07-23 2010-07-01 Hüttinger Elektronik GmbH & Co. KG Plasmaversorgungseinrichtung
FR2919762B1 (fr) * 2007-08-02 2009-10-02 Thales Sa Coupleur de puissance pour generateur haute frequence industrielle
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US20090121555A1 (en) * 2007-11-08 2009-05-14 Augustyn Michael T Vehicle audio system power supply
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
US9288886B2 (en) 2008-05-30 2016-03-15 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US7948312B2 (en) * 2009-05-13 2011-05-24 Qualcomm, Incorporated Multi-bit class-D power amplifier system
KR20120082450A (ko) 2009-10-12 2012-07-23 사이클로스 세미컨덕터, 인크. 종래의 모드에서 공진 클록 네트워크를 동작시키기 위한 아키텍처
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
EP2552340A4 (de) 2010-03-31 2015-10-14 Univ Colorado State Res Found Plasmavorrichtung mit flüssig-gas-schnittstelle
CA2794895A1 (en) 2010-03-31 2011-10-06 Colorado State University Research Foundation Liquid-gas interface plasma device
JPWO2011148711A1 (ja) * 2010-05-27 2013-07-25 京セラ株式会社 増幅回路ならびにそれを用いた送信装置および通信装置
CN102170277A (zh) * 2011-01-20 2011-08-31 中国科学院半导体研究所 基于移相相与获取皮秒精度窄脉宽ttl信号的方法
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
WO2016147272A1 (ja) * 2015-03-13 2016-09-22 日本電気株式会社 生体検知装置、生体検知方法、および、記録媒体
DE102015212232B4 (de) 2015-06-30 2020-03-05 TRUMPF Hüttinger GmbH + Co. KG Leistungscombiner zur Kopplung von Hochfrequenzsignalen und Leistungscombineranordnung mit einem solchen Leistungscombiner
US11038477B2 (en) 2017-06-30 2021-06-15 Airily Technologies, LLC High gain resonant amplifier for resistive output impedance
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10938358B2 (en) * 2018-10-31 2021-03-02 Kabushiki Kaisha Toshiba Digital power amplifier
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN113169026B (zh) 2019-01-22 2024-04-26 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11984306B2 (en) 2021-06-09 2024-05-14 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
CN113904421A (zh) * 2021-10-28 2022-01-07 丰码科技(南京)有限公司 一种用于自动导向车的信号源
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications

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Also Published As

Publication number Publication date
WO2003077414A3 (de) 2004-04-08
DE10211609B4 (de) 2009-01-08
US20050088231A1 (en) 2005-04-28
WO2003077414A2 (de) 2003-09-18
DE10211609A1 (de) 2003-10-09
US7046088B2 (en) 2006-05-16

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