WO2003073794A1 - Resistance de materiau carbone - Google Patents
Resistance de materiau carbone Download PDFInfo
- Publication number
- WO2003073794A1 WO2003073794A1 PCT/EP2003/002649 EP0302649W WO03073794A1 WO 2003073794 A1 WO2003073794 A1 WO 2003073794A1 EP 0302649 W EP0302649 W EP 0302649W WO 03073794 A1 WO03073794 A1 WO 03073794A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resistor
- crenellated
- thickness
- transition section
- carbonaceous material
- Prior art date
Links
- 239000003575 carbonaceous material Substances 0.000 title claims abstract description 16
- 230000007704 transition Effects 0.000 claims abstract description 33
- 230000002093 peripheral effect Effects 0.000 claims abstract description 14
- 230000007423 decrease Effects 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000007770 graphite material Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000002231 Czochralski process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007620 mathematical function Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0006—Electric heating elements or system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/22—Elongated resistive element being bent or curved, e.g. sinusoidal, helical
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
- H05B3/64—Heating elements specially adapted for furnaces using ribbon, rod, or wire heater
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0006—Electric heating elements or system
- F27D2099/0008—Resistor heating
- F27D2099/0011—The resistor heats a radiant tube or surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Definitions
- the invention relates to electric resistances used as heating elements, especially those used as a heat source in furnaces working at high temperature and generally called « resistorslade
- the invention particularly relates to such resistors made from carbonaceous materials.
- Electric resistances are well known and commonly used as heating sources in furnaces working at high temperature.
- the materials used to make these resistances are selected according to various criteria such as, notably, the expected working temperature and the physico-chemical environment surrounding the resistances during use.
- carbonaceous materials such as graphite, carbon or some carbon/carbon composites (C/C composites). This choice is justified by several properties of these materials such as :
- the electric resistances for furnaces can have different shapes and be assembled in different ways. For example, they can be axisymetrical (apart from the electrical connections), generally in the shape of a hollow cylinder (e.g. US 5 660 752) or of two hollow cylinders of different diameters linked by a tapered connecting portion (e.g. US 4 533 822). For brittle materials such as graphite and, to a lesser extent, the C/C composites, these resistances are made by assembling U-shaped sections (US 3 786 165) or shell-like elements (DE 37 43 879, US 4 549 345, US 4 755 858, US 5 660 752). Patent US 6 285 Oi l disclosed recently a one-piece almost cylindrical resistor made of carbonaceous material.
- resistors often have the form of a hollow cylinder whose wall comprises straight, alternated and regularly spaced slots, which form a continuous path with “crenellations” or meanders, also called “zig-zags”, as illustrated in figure 1 . Electricity passes along that path.
- This kind of resistor will hereafter be referred to as a “crenellated resistor”.
- the meander-like shape of crenellated resistors provides them with high mechanical strength, reduces the number of electric connections and forms an almost continuous wall which emits a very even thermal flux towards the inner space of the cylinder.
- the resistor disclosed by US 6 285 01 1 is set out as a good compromise between economy of space, high mechanical strength and high heating power.
- the inventor has tried to make a resistor for high temperature duties which allows an almost perfectly even temperature distribution in the working area, which would be free of the drawbacks known on the resistors according to the prior art, which would still have the main characteristics of crenellated resistors, which could have an improved lifespan and which would remain economically competitive.
- the invention provides a crenellated resistor, i.e. a resistance with a hollow cylindrical shape and a meander like design, made from a carbonaceous material, and characterized in that the wall thickness varies in the extremities of the meanders -where the electrical lines are curved - in order to produce an even temperature on the surface of the resistor when in use.
- a crenellated resistor i.e. a resistance with a hollow cylindrical shape and a meander like design, made from a carbonaceous material, and characterized in that the wall thickness varies in the extremities of the meanders -where the electrical lines are curved - in order to produce an even temperature on the surface of the resistor when in use.
- the inventor worked on the hypothesis that the temperature gradients were due to a high concentration of the electrical flow lines - and therefore to an increase in the power dissipated per unit of surface area - in the part of the meander where the radius of the curve is the shortest. In this way, he tried to increase the electrical resistance in this area in order to distribute more evenly these electrical flow lines.
- the inventor figured out that a modification of the wall thickness of the resistor determined so as to modify the electric current density. This modification was made essentially in the extremities of the meanders where the electrical lines are curved and consisted in decreasing the wall thickness when the radius of the curved electrical line decreased. This idea allows to get an improved temperature homogeneity without any major impact on the mechanical characteristics of the resistor.
- the invention is also aimed at the use of a crenellated resistor with its improved features into a furnace working at high temperature.
- This invention particularly relates to the use of a crenellated resistor according to the invention for the production of single crystals - or monocrystals - of silicon according to the Czochralski process (CZ furnaces).
- CZ furnaces Czochralski process
- a furnace or oven comprising a crenellated resistor according to the invention.
- the invention is particularly useful to pull silicon single crystals according to the Czochralski process.
- the process releases a silica rich vapor which reacts with the reactor, especially in the hot spots, and creates a premature wear.
- this application requires an even heating inside the working area (i.e. in the inner space of the hollow resistor).
- Figure 1 gives a general view of a typical crenellated resistor of prior art.
- Figure 2 schematically illustrates an elementary segment of a crenellated resistor according to prior art ; front face view (A) and cross sectional view (B) .
- Figure 3 gives ⁇ simplified view of the electric current line distribution into an elementary segment of a crenellated resistor according to prior art.
- Figure 4 illustrates an elementary segment of a crenellated resistor made according to the principles of this invention ; front face view (A) and cross sectional view (B).
- Figure 5 schematically illustrates an elementary segment of a crenellated resistor made according to a preferred embodiment of this invention ; front face view (A) and cross sectional view (B).
- a crenellated resistor (1 ) with the general shape of a cylinder, generally includes a plurality of straight slots (2), which are alternated and regularly spaced.
- the slots (2) emerge alternatively at each side (H and B) of the resistor, and this defines a path with meanders whose linear resistance is approximately even, at least in the straight portions (3).
- the turns of each meander form crenels (or crenellations or meander halves) (6), which will be hereafter referred to as "transition sections".
- the crenellated resistor determines an inside area (or inner space) (9) where the parts or products to be treated are loaded.
- the resistor according to the invention can be an assembly of several pieces, said pieces being for example linked together by parts used also for the electric connection.
- the crenellated resistor according to the invention can also be a one-piece hollow cylinder, as illustrated on the Figure 1 .
- the crenellated resistor includes some electrical and/or mechanical connection means (5, 5') which typically comprise mere extensions of one or more transition sections.
- the thickness of the wall of the crenellated resistor ( 1 ) according to prior art (and more precisely the radial thickness relatively to the C axis of the cylinder) Eo is essentially uniform or, like the resistor disclosed by US 6 285 01 1 , greater at the ends of its section (which is U-shaped or H-shaped).
- the length L of a crenellated resistor is typically comprised between a few hundreds of millimeters and 1 meter or even 2 meters. Its diameter D is typically between 100 and 1000 mm. The wall thickness is typically between 5 and 40 mm.
- Figure 2 exhibits an elementary segment (or meander half) (6) of a crenellated resistor ( 1 ), relative to a median line, either seen from the front side (2A) or seen along the cross section A-A' (2B).
- This elementary segment is repeated along the periphery, alternatively oriented upwards or downwards.
- the elementary segment typically has two straight « legs » (3) and a transition section (or extremity) (4) linking these two straight legs.
- the extremities (4) of the elementary segments can have a more or less perfectly circular shape.
- the electric current lines ( 10) are essentially parallel in the straight legs and gradually change their direction in the transition section (4).
- Figure 3 schematically illustrates how the electric current lines (10, 10') are arranged in each elementary segment.
- the crenellated resistor ( 1 ) made with carbonaceous material has a wall thickness (or « radial » thickness) E, which has in the transition sections a profile adapted to produce an even surface temperature when an electric current is flowing through it.
- the crenellated resistor (1 ) made with a carbonaceous material according to the invention has the shape of a hollow cylinder whose wall has straight, alternated and regularly spaced slots, which form a path with meanders, each elementary segment (6) of the resistor comprising two straight segments (3) and a transition section (4), the said transition section (4) comprising a peripheral edge (8) and an internal edge (7), and is characterized in that, in order to get an approximately even surface temperature when a current is flowing, the radial thickness E decreases from the peripheral edge (8) to the internal edge (7).
- the wall thickness of the crenellated resistor is variable in the extremities of its meanders where the electrical lines are curved, i.e. in the transition sections (4). Said wall "radial" thickness decreases when the radius of the curved electrical line decreases, thus decreases from the peripheral edge (8) to the internal edge (7), in order to distribute more evenly the electrical flow lines.
- the wall thickness of the crenellated resistor made from a carbonaceous material decreases in a monotonic manner.
- said monotonic decrease can be carried out "discontinuously", i.e. by machining "steps" on the surface of the resistor (or on the cavity surface of the mold used for shaping the resistor).
- the thickness profile can be defined by a mathematical formula. For instance, the thickness profile seen along a line including C, the center of the circular path followed by the transition section (4) (line T in Figure 4), could be given by a mathematical function E(x, ⁇ ), where ⁇ is the angle between the line T and a reference axis (typically the main axis Ao of the elementary segment) and x the distance between the considered point p, located on the line T and the point C.
- the profile followed by E is typically a symmetrical function with respect to the main axis Ao of the elementary segment.
- the profile of E can be experimentally determined, or through some calculations (specially finite element calculations) or through a mathematical simulation.
- the surface temperature is linked to the radiated power it emits while working.
- the thickness profile could be simply determined through a calculation of the power p ⁇ dissipated through the Joule effect into any unit of volume of the resistor, assuming that every element of the surface will receive a power equal to the sum of the electric power dissipated in each the volume units (p 0 ) located beneath it, and will then transfer it into its environment.
- the thickness profile of the transition section (4) could be determined in a such a way that the electrical power produced by unit of surface is approximately the same whatever the surface unit considered.
- ⁇ U Ua - Ub
- R ⁇ r p / (e x dr)
- S ⁇ r x dr
- Ua and Ub are the two equipotential lines « a » and « b » shown on the figure 4, respectively
- p is the resistivity of the carbonaceous material
- r, e, dr are the average radius of the transition section around the center C, the thickness and the width of each infinitesimal step i, respectively.
- the profile can be calculated with the objective that the power dissipated by each "step” is equal to the same value, whatever the step considered. When p has an even value throughout the material, which is generally the case, it does not interfere with the profile calculation.
- the thickness profile is such that the thickness of the transition section (4) is the largest (i.e. thickest) close to the peripheral edge (8) of the said section, and the smallest (i.e. thinnest) close to the internal edge (7), i.e. close from the center C of the said section.
- Such a configuration allows to get a more homogeneous surface temperature with a negligible impact on the mechanical strength of the transition section.
- the profile is such that the thickness E decreases steadily between the peripheral edge (8) and the internal edge (7) of the transition section (4).
- the thickness profile comprises a limited number of sections, each of them being characterized by a uniform thickness (El , E2, ...) but different for each section or each "step” (Ml , M2,).
- the width (LI , L2, ...) of each step could vary.
- the thickest part is normally located at the peripheral edge (8), which allows to keep high mechanical characteristic. This variation greatly simplifies the fabrication of the resistor according to the invention.
- Figure 5 illustrates a resistor according to this preferred variation of the invention.
- the A-A' cross section of the Figure 5A shows a step by step decrease of the thickness from the peripheral edge (8) to the internal edge (7) of the transition section (4).
- the thickness profile has a similar shape for all the lines Ta, Tb, ... included between the lines « a » and « b » and the thickness is approximately steady in each straight section (3).
- the profile could be symmetrical relative to the plane which contains the transition section.
- the fabrication is easier with an ⁇ symmetric profile as illustrated in Figure 5B, where one of the faces of the transition section is flush with one of the faces of straight legs (3).
- the thickness profile according to this preferred variation can be calculated using the mathematical formulas proposed above.
- the steps "i" have then a finite width (LI , L2, ...) which is typically between 1 and 20 mm.
- the number steps is limited, typically between 3 and 10 steps. Too low a number does not allow to get the desired homogeneity, too high a number leads to excessive production costs of the crenellated resistor.
- the thickness in the straight sections is typically between 5 and 40 mm.
- the thicker part of the profile is typically between 25 and 40 mm.
- the thinner part, located next to the internal edge (7) has a thickness which is 2 to 10 times smaller (typically approximately 5 times lower) than the thickness of the thickest area located next to the peripheral edge (8) of the transition section.
- the peripheral edge (8) and internal edge (7) can be in whole or in part straight or arcuated. They can also include some flat or curved portions.
- the inventor has determined, through a finite element calculation giving the distribution of the lines of electric flow, the amount of power dissipated per unit area (i.e. the power received and emitted by each surface unit) in the transition sections of a crenellated resistor according to prior art with a uniform wall thickness, and found that the ratio between the largest and the lowest values of the power dissipation densities is more than 200 over the surface of a transition section (typically between 50 ⁇ W/mm 2 a 15 mW/mm 2 ).
- the ratio between the largest and the lowest values of the power dissipation densities is no more than 10, or even no more than 5, when the transition sections are made according to the invention with a thickness profile comprising only 4 steps with 4 different thicknesses.
- a profile with 10 steps allows to keep this ratio between the highest and lowest local power below 3.
- the carbonaceous material can be selected among the group comprising graphite materials, carbon materials and carbon/carbon composite materials.
- the crenellated resistor according to the invention can be produced by any known technique used to manufacture parts or items from carbonaceous materials.
- the production process for manufacturing a one-piece crenellated resistor includes : - the production of a hollow cylinder whose wall thickness has a uniform value, - machining operations (including if necessary drilling, cutting, carving) of the wall of the cylinder so as to get the desired meanders and the desired thickness profiles.
- the hollow cylinder can be produced from a plain cylinder through some drilling, coring, or cutting operations, or any other means.
- the resistor can be made starting with a green block or cylinder and performing at least one heat treatment step within the process.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Resistance Heating (AREA)
- Non-Adjustable Resistors (AREA)
- Conductive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Thermistors And Varistors (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/505,709 US6993060B2 (en) | 2002-02-27 | 2003-02-24 | Resistor made from carbonaceous material |
DE60301059T DE60301059D1 (de) | 2002-02-27 | 2003-02-24 | Widerstand aus kohlenstoffhaltigen material |
AT03712009T ATE300163T1 (de) | 2002-02-27 | 2003-02-24 | Widerstand aus kohlenstoffhaltigen material |
EP03712009A EP1479269B1 (fr) | 2002-02-27 | 2003-02-24 | Resistance de materiau carbone |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0202467A FR2836592A1 (fr) | 2002-02-27 | 2002-02-27 | Resistor en materiau carbone |
FR02/02467 | 2002-02-27 | ||
US36017702P | 2002-03-01 | 2002-03-01 | |
US60/360,177 | 2002-03-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003073794A1 true WO2003073794A1 (fr) | 2003-09-04 |
Family
ID=27767077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2003/002649 WO2003073794A1 (fr) | 2002-02-27 | 2003-02-24 | Resistance de materiau carbone |
Country Status (5)
Country | Link |
---|---|
US (1) | US6993060B2 (fr) |
EP (1) | EP1479269B1 (fr) |
AT (1) | ATE300163T1 (fr) |
DE (1) | DE60301059D1 (fr) |
WO (1) | WO2003073794A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011002749A1 (de) | 2011-01-17 | 2012-07-19 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Konvertierung von Siliciumtetrachlorid in Trichlorsilan |
DE102011078676A1 (de) | 2011-07-05 | 2013-01-10 | Wacker Chemie Ag | Verfahren zur Produktion von Polysilicium |
US10266414B2 (en) | 2015-06-16 | 2019-04-23 | Hemlock Semiconductor Operations Llc | Susceptor arrangement for a reactor and method of heating a process gas for a reactor |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5828232B2 (ja) | 2011-06-29 | 2015-12-02 | 住友電気工業株式会社 | ガラス母材用加熱炉 |
JP5911179B2 (ja) * | 2013-08-21 | 2016-04-27 | 信越化学工業株式会社 | 立体形状のセラミックスヒーター |
JP6459406B2 (ja) * | 2014-11-04 | 2019-01-30 | 住友電気工業株式会社 | 炭化珪素単結晶の製造装置および炭化珪素単結晶の製造方法 |
JP6436896B2 (ja) * | 2015-12-04 | 2018-12-12 | 信越化学工業株式会社 | カーボンヒーターおよびカーボンヒーターの製造方法 |
JP7085261B2 (ja) * | 2018-01-25 | 2022-06-16 | 株式会社Ihiエアロスペース | ホールスラスタ用ヒータ及びホールスラスタ用ヒータの製造方法 |
Citations (7)
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---|---|---|---|---|
US3786165A (en) * | 1970-11-10 | 1974-01-15 | Anvar | Preheating method for furnaces |
US4533822A (en) * | 1983-03-25 | 1985-08-06 | Tokyo Shibaura Denki Kabushiki Kaisha | Heating resistor of single crystal manufacturing apparatus |
US4549345A (en) * | 1981-11-19 | 1985-10-29 | Wilsey Harvey J | Method of making a graphite zig-zag picket heater |
US4755658A (en) * | 1985-11-12 | 1988-07-05 | Ultra Carbon Corporation | Segmented heater system |
DE3743879A1 (de) * | 1986-12-26 | 1988-07-07 | Toshiba Ceramics Co | Kohlenstoff-heizvorrichtung und zugehoeriges heizelement |
US5660752A (en) * | 1994-07-01 | 1997-08-26 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft | Heating element and process for heating crucibles |
US6285011B1 (en) * | 1999-10-12 | 2001-09-04 | Memc Electronic Materials, Inc. | Electrical resistance heater for crystal growing apparatus |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2971039A (en) * | 1957-11-26 | 1961-02-07 | Hayes Inc C I | Resistance heating element for vacuum furnaces and the like |
US3359077A (en) * | 1964-05-25 | 1967-12-19 | Globe Union Inc | Method of growing a crystal |
US4410796A (en) * | 1981-11-19 | 1983-10-18 | Ultra Carbon Corporation | Segmented heater assembly |
US6093913A (en) * | 1998-06-05 | 2000-07-25 | Memc Electronic Materials, Inc | Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections |
-
2003
- 2003-02-24 AT AT03712009T patent/ATE300163T1/de not_active IP Right Cessation
- 2003-02-24 WO PCT/EP2003/002649 patent/WO2003073794A1/fr active IP Right Grant
- 2003-02-24 EP EP03712009A patent/EP1479269B1/fr not_active Expired - Lifetime
- 2003-02-24 US US10/505,709 patent/US6993060B2/en not_active Expired - Lifetime
- 2003-02-24 DE DE60301059T patent/DE60301059D1/de not_active Expired - Lifetime
Patent Citations (7)
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011002749A1 (de) | 2011-01-17 | 2012-07-19 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Konvertierung von Siliciumtetrachlorid in Trichlorsilan |
WO2012098069A1 (fr) | 2011-01-17 | 2012-07-26 | Wacker Chemie Ag | Procédé et dispositif pour la conversion de tétrachlorure de silicium en trichlorosilane |
US9480959B2 (en) | 2011-01-17 | 2016-11-01 | Wacker Chemie Ag | Process and apparatus for conversion of silicon tetrachloride to trichlorosilane |
DE102011078676A1 (de) | 2011-07-05 | 2013-01-10 | Wacker Chemie Ag | Verfahren zur Produktion von Polysilicium |
EP2551239A1 (fr) | 2011-07-05 | 2013-01-30 | Wacker Chemie AG | Procédé de production de polysilicium |
US9988714B2 (en) | 2011-07-05 | 2018-06-05 | Wacker Chem Ie Ag | Process for producing polysilicon |
US10266414B2 (en) | 2015-06-16 | 2019-04-23 | Hemlock Semiconductor Operations Llc | Susceptor arrangement for a reactor and method of heating a process gas for a reactor |
Also Published As
Publication number | Publication date |
---|---|
US20050120547A1 (en) | 2005-06-09 |
DE60301059D1 (de) | 2005-08-25 |
ATE300163T1 (de) | 2005-08-15 |
EP1479269A1 (fr) | 2004-11-24 |
US6993060B2 (en) | 2006-01-31 |
EP1479269B1 (fr) | 2005-07-20 |
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