WO2003067638A1 - Method for manufacturing silicon nitride film using chemical vapor deposition apparatus of single chamber type - Google Patents

Method for manufacturing silicon nitride film using chemical vapor deposition apparatus of single chamber type Download PDF

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Publication number
WO2003067638A1
WO2003067638A1 PCT/KR2003/000265 KR0300265W WO03067638A1 WO 2003067638 A1 WO2003067638 A1 WO 2003067638A1 KR 0300265 W KR0300265 W KR 0300265W WO 03067638 A1 WO03067638 A1 WO 03067638A1
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gas
nitride film
range
wafer
maintained
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PCT/KR2003/000265
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French (fr)
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Pyung-Yong Um
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Eugene Technology Co., Ltd.
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Priority to AU2003208031A priority Critical patent/AU2003208031A1/en
Publication of WO2003067638A1 publication Critical patent/WO2003067638A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Definitions

  • the present invention relates to a method for manufacturing a nitride f i lm, and more particularly to a method for manufacturing a nitride fi lm using a chemical vapor deposition apparatus of single chamber type that is capable of manufacturing a nitride film of excellent property by changing process conditions, such as the flow rate of reaction gas and carrier gas injected into a chamber and the pressure in the chamber, so that the nitride film is deposited on the surface of a wafer.
  • a semiconductor device is completed by formation of a pattern area, such as a device separation film, an interlayer isolat ion f i lm, an electric conduct ion f i lm, a contact , etc. , on the surface of a semiconductor substrate.
  • a pattern area such as a device separation film, an interlayer isolat ion f i lm, an electric conduct ion f i lm, a contact , etc.
  • the device separation film is made out of a oxidation film by a silicon partial oxidation process or a trench device separation process;
  • the interlayer isolation film is made out of a silicon oxidation film or nitride film, such as a phosphorous si 1 icon glass, a boron phosphorous si 1 icon glass, an undoped si 1 icon glass, etc.;
  • the electric conduction film and the contact are made out of multi-crystallized silicon, suicide, or metal material.
  • the nitride f i lm serves as an interlayer isolation fi lm.
  • the nitride film may be used as a material film, for example, an etching stopper f i lm in the case of an etching process, a barrier f i lm for preventing any damage of a lower film in the case of a chemical mechanical polishing process, a barrier film during formation of a minute pattern, such as a self-aligned contact, and an oxygen diffusion preventing film for preventing any diffusion of the oxygen to a semiconductor substrate in the case of a device separation process.
  • a metal material of low resistance is used as the material of a word line and a bit line for further improving a minute patterning due to the decrease of a design rule and read/write speeds of data, instead of a tungsten silicide or a doped silicon.
  • word or bit lines are formed out of the metal material, heavy metal contamination and thermal transformation of the metal material may be caused.
  • the nitride film is used as a barrier film even in the case of a low thermal bundle process.
  • the nitride film is generally deposited using a single chamber type chemical vapor deposition apparatus.
  • One of the single chamber type chemical vapor deposition apparatus is an electric furnace type chemical vapor deposition apparatus.
  • a loading effect and a surface roughness characteristic are excellent; however, a thermal bundle is generated due to exposure of a wafer to high temperature for ling time, with the result that an electric characteristic of the device formed on the wafer is aggravated due to a thermal deterioration of a metal electrode, and that it is difficult to decrease high stress of the nitride film.
  • a plasma enhancement chemical vapor deposition apparatus may be used.
  • the plasma enhancement chemical vapor deposition apparatus has an advantage that the nitride film is formed under low temperature atmosphere, but it has a drawback that deposition of the nitride f i lm is impossible when a step is formed due to problems of a loading effect and a step coverage, and that the wafer is damaged by the plasma.
  • a gas injection type chemical vapor deposition apparatus having a shower head serving as a gas injection unit has been proposed in order to overcome the aforesaid problems.
  • the drawback of the thermal bundle is somewhat mitigated by the gas injection type chemical vapor deposition apparatus since a processing time in the gas injection type chemical vapor deposition apparatus is short as compared to the electric furnace type chemical vapor deposition apparatus; however, the problem that the thermal bundle is generated cannot be completely solved.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a method for manufacturing a nitride film that is capable of minimizing generation of a thermal bundle.
  • a method for manufacturing a nitride film using a chemical vapor deposition apparatus of single chamber type comprising: a inlet gas line for introducing reaction gas; a shower head for injecting the introduced reaction gas; a heater, on which a wafer is placed; a heater supporting member for supporting the heater; and a vacuum port for discharging the reaction gas, all of which are disposed in a process chamber of the apparatus, wherein the flow rate of si lane gas, which is reaction gas injected into the process chamber, is maintained in the range between 2 and 60 SCCM, the flow rate of ammonia gas is maintained in the range between 20 and 8000 SCCM, and the flow rate of nitrogen gas or argon gas, which is carrier gas for diluting the reaction gas, is maintained in the range between 1000 and 10000 SCCM.
  • the si lane gas may be selected from the group consisting of Si 2 H4, Si2H6, andSiH 2 Cl2.
  • the pressure in the process chamber may be maintained in the range between about 50 and 300 torr, and/or the temperature in the process chamber may be maintained in the range between 600 and 800° C.
  • the distance between the shower head and the wafer loaded on the heater may be maintained in the range between 5 and 25 mm.
  • the ratio of the si lane gas to the ammonia gas may be adjusted in the range of from 1:400 to 1:1000, in order to maintain the effect of loading the nitride film deposited on the surface of the wafer more than 95%. Furthermore, the ratio of the si lane gas to the ammonia gas may be adjusted in the range of from 1:75 to 1:200, in order to improve the surface roughness characteristic of the nitride film deposited on the surface of the wafer.
  • the ratio of the si lane gas to the ammonia gas may be adjusted in the range of from 1:3 to 1:30, in order to improve the stress characteristic of the nitride film deposited on the surface of the wafer, and the flow rate of the carrier gas, such as nitrogen gas or argon gas, may be maintained in the range between 500 and 10000 SCCM, in order to improve the stress characteristic of the nitride film deposited on the surface of the wafer.
  • Fig. 1 is a schematic illustration of a single chamber type chemical
  • Fig. 2 is a graph showing a stress characteristic of a nitride film
  • Fig. 3 is a graph showing a surface roughness characteristic of a
  • nitride film according to the ratio of silane and ammonia gases
  • Fig. 4 shows a state of the surface of a nitride film in case that
  • the ratio of the silane gas to the ammonia gas is high;
  • Fig. 5 shows a state of the surface of a nitride film in case that
  • the ratio of the ammonia gas to the silane gas is high.
  • the technical kernel of the present invention resides in that the flow rate of reaction gas, such as silane gas and ammonia gas, and the flow rate of dilution gas, such as nitrogen or argon, are properly adjusted, and that the temperature and pressure in a chamber, in which a nitride film depositing process is carried out , are maintained properly, so as to provide a nitride film of excellent property.
  • reaction gas such as silane gas and ammonia gas
  • dilution gas such as nitrogen or argon
  • Fig.1 shows a single chamber type chemical vapor deposition apparatus for depositing a nitride film on the surface of a wafer.
  • a chemical vapor deposition apparatus comprises a process chamber 10, in which a nitride film depositing process is carried out, a inlet gas line 12 for introducing reaction gas, a shower head 14 for injecting the introduced reaction gas, a heater 16, on which a wafer is placed, a heater supporting member 18 for supporting the heater 16, and a vacuum port 20 for discharging the reaction gas.
  • a wafer 22 On the surface of the heater 16 is loaded a wafer 22, to which a process is carried out .
  • Silane gas or ammonia gas may be usually used as the reaction gas in order to form a nitride film on the surface of the wafer.
  • the flow rate of the si lane gas (SiH) is maintained in the range between 2 and 60 SCCM (standard cubic centimeter per minute), while the flow rate of the ammonia gas (NH 3 ) is maintained in the range between 20 and 8000 SCCM.
  • S12H6 or Si C gas may be used instead of the silane gas.
  • carrier gas for diluting the silane gas or the ammonia gas is injected nitrogen or argon, which is inactive gas.
  • the flow rate of the carrier gas is maintained in the range between 1000 and 10000 SCCM.
  • the pressure in the chamber is maintained in the range between 50 and 300 torr.
  • the distance between the shower head and the wafer is maintained in the range between 5 and 25 mm.
  • the temperature in the chamber is preferably maintained in the range between 600 and 800° C, more preferably at 750° C.
  • character ist ic of the nitride film such as the loading effect, the step coverage, the surface roughness characteristic, and the stress characteristic, is affected by the flow rate of the reaction gas while the temperature of the heater in the chamber, the distance between the shower head and the wafer, the pressure of the reaction gas, and the pressure in the reaction chamber are set. Consequently, the loading effect is affected, which has influence on the stress characteristic, the surface roughness characteristic and the pattern formation of the nitride film, by adjusting properly the flow rate of the reaction gas injected into the chamber.
  • the stress characteristic of the nitride film is improved as the ration of the silane gas is increased.
  • Table 1 indicates change in stress of the nitride film according to the ratio of the silane gas.
  • the stress of the nitride f i lm is 1.35 x 10 10
  • the stress of the nitride f i lm is 9.12 x 10 9 in case that the ratio of the si lane gas to the ammonia gas is 1:30, and the stress of the nitride film is -8.0 x 10 8 in case that the ratio of the silane gas to the ammonia gas is 1:0.6, which illustrate that the stress characteristic of the nitride film is improved gradually as the ratio of the silane gas is increased.
  • Fig. 2 is a graph showing a stress characteristic of a nitride film according to the ratio of silane and ammonia gases.
  • the X-axis in Fig. 2 indicates the ratio of the ammonia gas, while the Y-axis indicates the magnitude of the stress of the nitride film.
  • the stress of the nitride film is decreased as the ratio of the silane gas is increased from LI, which is a line having the lowest ratio of the silane gas, to L5, which is a line having the highest ratio of the silane gas.
  • the ratio of the silane gas to the ammonia gas is maintained in the range of from 1:3 to 1:30, in order to improve the stress characteristic of the nitride film.
  • the loading effect is 83% if the ratio of the si lane gas to the ammonia gas is 1:60, the loading effect is 87% if the ratio of the silane gas to the ammonia gas is 1:200, and the loading effect is 99% if the ratio of the silane gas to the ammonia gas is 1:800, which il lustrate that the characteristic of the loading effect is improved as the ratio of the ammonia gas is increased. Consequently, it is required to adjust the ratio of the silane gas to the ammonia gas in the range of from 1:400 to 1:1000 in order to maintain the loading effect more than 95%.
  • the surface roughness of the nitride f i lm is also improved as the ratio of the ammonia gas is increased, which can be seen from a graph as shown in Fig.3.
  • the X-axis in Fig.3 indicates the ratio of the si lane gas, while the Y-axis indicates the ratio of the ammonia gas.
  • the surface roughness of the nitride fi lm is increased (more than 0.16 micron) as the ratio of the silane gas becomes higher, while the surface roughness of the nitride film is decreased (less than 0.16 micron) as the ratio of the ammonia gas becomes higher. Consequently, it is preferable to adjust the ratio of the silane gas to the ammonia gas in the range of from 1:75 to 1:200 in order to improve the characteristic of the surface roughness of the nitride film.
  • Fig. 4 shows a state of the surface of a nitride film in case that the ratio of the silane gas to the ammonia gas is high
  • Fig. 5 shows a state of the surface of a nitride f i lm in case that the rat io of the ammonia gas to the silane gas is high.
  • the state of the surface of the nitride film is smooth more and more if the ratio of the ammonia gas to the silane gas is higher.
  • the inactive gas such as nitrogen or argon, which acts as the carrier gas used to di lute the process gas, such as si lane gas or ammonia gas, during a nitride fi lm depositing process, increases the uniformity of the process gas so that the thickness uniformity of the nitride film deposited on the surface of the wafer is improved. If the flow rate of the carrier gas is increased, the partial pressure of the process gas is lowered to suppress the deposition response of the nitride film. Especially, the deposition response of the ammonia gas is greater than that of the silane gas.
  • the flow rate of the nitrogen gas or the argon gas is maintained in the range between 500 and 10000 SCCM, in order to improve the stress characteristic of the nitride film.
  • a method for manufacturing a nitride film using a chemical vapor deposition apparatus of single chamber type provides a nitride f i lm with improved loading effect, surface roughness, stress, and thickness uniformity by adjusting the flow rate of react ion gas and carrier gas injected into a chamber, adjusting the pressure in the chamber during the process, and adjusting the distance between a shower head and a wafer, when the nitride f i lm is deposited on the surface of the wafer using the chemical vapor deposition.

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Abstract

The present invention relates to a method for manufacturing a nitride film using a chemical vapor deposition apparatus of single chamber type. Under the present invention, conditions of process, such as flow rate of reaction gas and carrier gas, which are injected into a chamber, pressure in the chamber, etc., are provided to deposit the nitride film on the surface of a wafer, whereby a nitride film with excellent characteristics is manufactured.

Description

METHOD FORMANUFACTURING SILICON NITRIDE FILMUSINGCHEMICAL VAPORDEPOSITION
APPARATUS OF SINGLE CHAMBER TYPE
Technical Field The present invention relates to a method for manufacturing a nitride f i lm, and more particularly to a method for manufacturing a nitride fi lm using a chemical vapor deposition apparatus of single chamber type that is capable of manufacturing a nitride film of excellent property by changing process conditions, such as the flow rate of reaction gas and carrier gas injected into a chamber and the pressure in the chamber, so that the nitride film is deposited on the surface of a wafer.
Background Art
As well known to those skilled in the art, a semiconductor device is completed by formation of a pattern area, such as a device separation film, an interlayer isolat ion f i lm, an electric conduct ion f i lm, a contact , etc. , on the surface of a semiconductor substrate. The device separation film is made out of a oxidation film by a silicon partial oxidation process or a trench device separation process; the interlayer isolation film is made out of a silicon oxidation film or nitride film, such as a phosphorous si 1 icon glass, a boron phosphorous si 1 icon glass, an undoped si 1 icon glass, etc.; the electric conduction film and the contact are made out of multi-crystallized silicon, suicide, or metal material.
The nitride f i lm serves as an interlayer isolation fi lm. In addition, the nitride film may be used as a material film, for example, an etching stopper f i lm in the case of an etching process, a barrier f i lm for preventing any damage of a lower film in the case of a chemical mechanical polishing process, a barrier film during formation of a minute pattern, such as a self-aligned contact, and an oxygen diffusion preventing film for preventing any diffusion of the oxygen to a semiconductor substrate in the case of a device separation process.
In case of manufacturing a dram device with volat i lity of data, a metal material of low resistance is used as the material of a word line and a bit line for further improving a minute patterning due to the decrease of a design rule and read/write speeds of data, instead of a tungsten silicide or a doped silicon. In case that such word or bit lines are formed out of the metal material, heavy metal contamination and thermal transformation of the metal material may be caused. In order to prevent the aforesaid problem, the nitride film is used as a barrier film even in the case of a low thermal bundle process.
The nitride film is generally deposited using a single chamber type chemical vapor deposition apparatus. One of the single chamber type chemical vapor deposition apparatus is an electric furnace type chemical vapor deposition apparatus. In case that the nitride film is formed using the electric furnace type chemical vapor deposition apparatus, a loading effect and a surface roughness characteristic are excellent; however, a thermal bundle is generated due to exposure of a wafer to high temperature for ling time, with the result that an electric characteristic of the device formed on the wafer is aggravated due to a thermal deterioration of a metal electrode, and that it is difficult to decrease high stress of the nitride film.
In addition to the electric furnace type chemical vapor deposition apparatus, a plasma enhancement chemical vapor deposition apparatus may be used. The plasma enhancement chemical vapor deposition apparatus has an advantage that the nitride film is formed under low temperature atmosphere, but it has a drawback that deposition of the nitride f i lm is impossible when a step is formed due to problems of a loading effect and a step coverage, and that the wafer is damaged by the plasma.
A gas injection type chemical vapor deposition apparatus having a shower head serving as a gas injection unit has been proposed in order to overcome the aforesaid problems. The drawback of the thermal bundle is somewhat mitigated by the gas injection type chemical vapor deposition apparatus since a processing time in the gas injection type chemical vapor deposition apparatus is short as compared to the electric furnace type chemical vapor deposition apparatus; however, the problem that the thermal bundle is generated cannot be completely solved. In addition, several problems, such as uniformity in thickness of the nitride film, uniformity in thickness between the wafers, uniformity in thickness between lots, uniformity in thickness according to the difference of surface area for each zone in the wafer, uniformity in thickness for each wafer zone in more than a prescribed length and breadth ratio pattern (step coverage), and surface roughness characteristic of the nitride film, are still unsolved.
Disclosure of Invention Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a method for manufacturing a nitride film that is capable of minimizing generation of a thermal bundle.
It is another object of the present invention to provide a method for manufacturing a nitride film that is capable of forming uniformly a deposition thickness for each zone in a wafer.
It is a further object of the present invention to provide a method for manufacturing a nitride film having an improved surface roughness characteristic. It is yet another object of the present invention to provide a method for manufacturing a nitride film having low stress.
In accordance with the present invention, the above and other objects can be accomplished by the provision of a method for manufacturing a nitride film using a chemical vapor deposition apparatus of single chamber type, comprising: a inlet gas line for introducing reaction gas; a shower head for injecting the introduced reaction gas; a heater, on which a wafer is placed; a heater supporting member for supporting the heater; and a vacuum port for discharging the reaction gas, all of which are disposed in a process chamber of the apparatus, wherein the flow rate of si lane gas, which is reaction gas injected into the process chamber, is maintained in the range between 2 and 60 SCCM, the flow rate of ammonia gas is maintained in the range between 20 and 8000 SCCM, and the flow rate of nitrogen gas or argon gas, which is carrier gas for diluting the reaction gas, is maintained in the range between 1000 and 10000 SCCM. Preferably, the si lane gas may be selected from the group consisting of Si2H4, Si2H6, andSiH2Cl2. Preferably, the pressure in the process chamber may be maintained in the range between about 50 and 300 torr, and/or the temperature in the process chamber may be maintained in the range between 600 and 800° C. Preferably, the distance between the shower head and the wafer loaded on the heater may be maintained in the range between 5 and 25 mm.
The ratio of the si lane gas to the ammonia gas may be adjusted in the range of from 1:400 to 1:1000, in order to maintain the effect of loading the nitride film deposited on the surface of the wafer more than 95%. Furthermore, the ratio of the si lane gas to the ammonia gas may be adjusted in the range of from 1:75 to 1:200, in order to improve the surface roughness characteristic of the nitride film deposited on the surface of the wafer.
Moreover, the ratio of the si lane gas to the ammonia gas may be adjusted in the range of from 1:3 to 1:30, in order to improve the stress characteristic of the nitride film deposited on the surface of the wafer, and the flow rate of the carrier gas, such as nitrogen gas or argon gas, may be maintained in the range between 500 and 10000 SCCM, in order to improve the stress characteristic of the nitride film deposited on the surface of the wafer.
Brief Description of the Drawings
The above and other objects, features and other advantages of the
present invention will be more clearly understood from the following
detailed description taken in conjunction with the accompanying drawings, in which:
Fig. 1 is a schematic illustration of a single chamber type chemical
vapor deposition apparatus for depositing a nitride film on the surface of
a wafer;
Fig. 2 is a graph showing a stress characteristic of a nitride film
according to the ratio of si lane and ammonia gases;
Fig. 3 is a graph showing a surface roughness characteristic of a
nitride film according to the ratio of silane and ammonia gases;
Fig. 4 shows a state of the surface of a nitride film in case that
the ratio of the silane gas to the ammonia gas is high; and
Fig. 5 shows a state of the surface of a nitride film in case that
the ratio of the ammonia gas to the silane gas is high.
Best mode for Carrying Out the Invention The technical kernel of the present invention resides in that the flow rate of reaction gas, such as silane gas and ammonia gas, and the flow rate of dilution gas, such as nitrogen or argon, are properly adjusted, and that the temperature and pressure in a chamber, in which a nitride film depositing process is carried out , are maintained properly, so as to provide a nitride film of excellent property.
Fig.1 shows a single chamber type chemical vapor deposition apparatus for depositing a nitride film on the surface of a wafer.
Referring to Fig. 1, a chemical vapor deposition apparatus according to the present invention comprises a process chamber 10, in which a nitride film depositing process is carried out, a inlet gas line 12 for introducing reaction gas, a shower head 14 for injecting the introduced reaction gas, a heater 16, on which a wafer is placed, a heater supporting member 18 for supporting the heater 16, and a vacuum port 20 for discharging the reaction gas. On the surface of the heater 16 is loaded a wafer 22, to which a process is carried out .
Silane gas or ammonia gas may be usually used as the reaction gas in order to form a nitride film on the surface of the wafer. The flow rate of the si lane gas (SiH) is maintained in the range between 2 and 60 SCCM (standard cubic centimeter per minute), while the flow rate of the ammonia gas (NH3) is maintained in the range between 20 and 8000 SCCM. S12H6 or Si C gas may be used instead of the silane gas. As carrier gas for diluting the silane gas or the ammonia gas is injected nitrogen or argon, which is inactive gas. The flow rate of the carrier gas is maintained in the range between 1000 and 10000 SCCM. The pressure in the chamber is maintained in the range between 50 and 300 torr. The distance between the shower head and the wafer is maintained in the range between 5 and 25 mm. The temperature in the chamber is preferably maintained in the range between 600 and 800° C, more preferably at 750° C.
In the aforesaid chemical vapor deposition apparatus, character ist ic of the nitride film, such as the loading effect, the step coverage, the surface roughness characteristic, and the stress characteristic, is affected by the flow rate of the reaction gas while the temperature of the heater in the chamber, the distance between the shower head and the wafer, the pressure of the reaction gas, and the pressure in the reaction chamber are set. Consequently, the loading effect is affected, which has influence on the stress characteristic, the surface roughness characteristic and the pattern formation of the nitride film, by adjusting properly the flow rate of the reaction gas injected into the chamber.
The stress characteristic of the nitride film is improved as the ration of the silane gas is increased. Table 1 indicates change in stress of the nitride film according to the ratio of the silane gas.
Table 1
Class Stress(dyne/cm2) Rat io(SiH :NH3)
State 1 1.35 x 1010 1 : 8 0
State 2 9. 12 x 109 1 : 3 0
State 3 -8.0 x 108 1 : 8. 6
As indicated in Table 1, the stress of the nitride f i lm is 1.35 x 10 10
in case that the ratio of the silane gas to the ammonia gas is 1:80, the stress of the nitride f i lm is 9.12 x 109 in case that the ratio of the si lane gas to the ammonia gas is 1:30, and the stress of the nitride film is -8.0 x 108 in case that the ratio of the silane gas to the ammonia gas is 1:0.6, which illustrate that the stress characteristic of the nitride film is improved gradually as the ratio of the silane gas is increased.
Fig. 2 is a graph showing a stress characteristic of a nitride film according to the ratio of silane and ammonia gases. The X-axis in Fig. 2 indicates the ratio of the ammonia gas, while the Y-axis indicates the magnitude of the stress of the nitride film. As seen from the graph, the stress of the nitride film is decreased as the ratio of the silane gas is increased from LI, which is a line having the lowest ratio of the silane gas, to L5, which is a line having the highest ratio of the silane gas. Preferably, the ratio of the silane gas to the ammonia gas is maintained in the range of from 1:3 to 1:30, in order to improve the stress characteristic of the nitride film.
As the ratio of the ammonia gas is increased, the characteristic of the loading effect is improved, which may be confirmed from Table 2.
Table 2
Class Loading effect Ratio(SiH :NH3)
State 1 83% 1:60
State 2 87% 1:200
State 3 99% 1:800
As seen from Table 2, the loading effect is 83% if the ratio of the si lane gas to the ammonia gas is 1:60, the loading effect is 87% if the ratio of the silane gas to the ammonia gas is 1:200, and the loading effect is 99% if the ratio of the silane gas to the ammonia gas is 1:800, which il lustrate that the characteristic of the loading effect is improved as the ratio of the ammonia gas is increased. Consequently, it is required to adjust the ratio of the silane gas to the ammonia gas in the range of from 1:400 to 1:1000 in order to maintain the loading effect more than 95%.
The surface roughness of the nitride f i lm is also improved as the ratio of the ammonia gas is increased, which can be seen from a graph as shown in Fig.3. The X-axis in Fig.3 indicates the ratio of the si lane gas, while the Y-axis indicates the ratio of the ammonia gas.
As can be seen from Fig.3, the surface roughness of the nitride fi lm is increased (more than 0.16 micron) as the ratio of the silane gas becomes higher, while the surface roughness of the nitride film is decreased (less than 0.16 micron) as the ratio of the ammonia gas becomes higher. Consequently, it is preferable to adjust the ratio of the silane gas to the ammonia gas in the range of from 1:75 to 1:200 in order to improve the characteristic of the surface roughness of the nitride film.
Fig. 4 shows a state of the surface of a nitride film in case that the ratio of the silane gas to the ammonia gas is high, and Fig. 5 shows a state of the surface of a nitride f i lm in case that the rat io of the ammonia gas to the silane gas is high. As can be seen from Figs.4 and 5, the state of the surface of the nitride film is smooth more and more if the ratio of the ammonia gas to the silane gas is higher.
The inactive gas, such as nitrogen or argon, which acts as the carrier gas used to di lute the process gas, such as si lane gas or ammonia gas, during a nitride fi lm depositing process, increases the uniformity of the process gas so that the thickness uniformity of the nitride film deposited on the surface of the wafer is improved. If the flow rate of the carrier gas is increased, the partial pressure of the process gas is lowered to suppress the deposition response of the nitride film. Especially, the deposition response of the ammonia gas is greater than that of the silane gas. Consequently, it is required to adjust the flow rate of the nitrogen gas or the argon gas in case that the nitride film is to be formed under the condition that the silane gas is more than the ammonia gas. Since the stress characteristic of the nitride film is improved as the flow rate of the carrier gas is increased, the nitride film of excellent property may be formed using the carrier gas properly. Preferably, the flow rate of the nitrogen gas or the argon gas is maintained in the range between 500 and 10000 SCCM, in order to improve the stress characteristic of the nitride film.
Industrial Applicability
As apparent from the above description, a method for manufacturing a nitride film using a chemical vapor deposition apparatus of single chamber type according to the present invention provides a nitride f i lm with improved loading effect, surface roughness, stress, and thickness uniformity by adjusting the flow rate of react ion gas and carrier gas injected into a chamber, adjusting the pressure in the chamber during the process, and adjusting the distance between a shower head and a wafer, when the nitride f i lm is deposited on the surface of the wafer using the chemical vapor deposition.
Although the preferred embodiments of the present invent ion have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims

What Is Claimed Is:
1. A method for manufacturing a nitride film using a chemical vapor deposition apparatus of single chamber type, comprising: a inlet gas line for introducing reaction gas; a shower head for injecting the introduced reaction gas; aheater, on which a wafer is placed; aheater supporting member for supporting the heater; and a vacuum port for discharging the reaction gas, all of which are disposed in a process chamber of the apparatus, wherein the flow rate of silane gas, which is reaction gas injected into the process chamber, is maintained in the range between 2 and 60 SCCM, the flow rate of ammonia gas is maintained in the range between 20 and 8000 SCCM, and the flow rate of nitrogen gas or argon gas, which is carrier gas for diluting the reaction gas, is maintained in the range between 1000 and 10000 SCCM.
2. The method as set forth in claim 1, wherein the silane gas is selected from the group consisting of Si2H4, Si2H6, and
Figure imgf000014_0001
3. The method as set forth in claim 1, wherein the pressure in the process chamber is maintained in the range between about 50 and 300 torr.
4. The method as set forth in claim 1, wherein the distance between the shower head and the wafer loaded on the heater is maintained in the range between 5 and 25 mm.
5. The method as set forth in claim 1, wherein the temperature in the process chamber is maintained in the range between 600 and 800° C.
6. The method as set forth in claim 1, wherein the ratio of the si lane gas to the ammonia gas is adjusted in the range of from 1:400 to 1:1000, in order to maintain the effect of loading the nitride film deposited on the surface of the wafer more than 95%.
7. The method as set forth in claim 1, wherein the ratio of the silane gas to the ammonia gas is adjusted in the range of from 1:75 to 1:200, in order to improve the surface roughness characteristic of the nitride film deposited on the surface of the wafer.
8. The method as set forth in claim 1, wherein the rat io of the si lane gas to the ammonia gas is adjusted in the range of from 1:3 to 1:30, in order to improve the stress characteristic of the nitride film deposited on the surface of the wafer.
9. The method as set forth in claim 1, wherein the flow rate of the carrier gas, such as nitrogen gas or argon gas, is maintained in the range between 500 and 10000 SCCM, in order to improve the stress characteristic of the nitride film deposited on the surface of the wafer.
PCT/KR2003/000265 2002-02-08 2003-02-06 Method for manufacturing silicon nitride film using chemical vapor deposition apparatus of single chamber type WO2003067638A1 (en)

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US5260236A (en) * 1991-06-07 1993-11-09 Intel Corporation UV transparent oxynitride deposition in single wafer PECVD system
US5932286A (en) * 1993-03-16 1999-08-03 Applied Materials, Inc. Deposition of silicon nitride thin films
JP3045945B2 (en) * 1995-03-30 2000-05-29 川崎製鉄株式会社 Method of forming silicon nitride thin film
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JPS6314421A (en) * 1986-07-07 1988-01-21 Matsushita Electric Ind Co Ltd Plasma chemical vapor deposition method
KR960026365A (en) * 1994-12-15 1996-07-22 기다오까 다까시 Method of manufacturing silicon nitride film
KR970030477A (en) * 1995-11-28 1997-06-26 김광호 Silicon nitride film formation method
US6140255A (en) * 1998-12-15 2000-10-31 Advanced Micro Devices, Inc. Method for depositing silicon nitride using low temperatures

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