WO2003060919A3 - Resistive memory elements with reduced roughness - Google Patents

Resistive memory elements with reduced roughness Download PDF

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Publication number
WO2003060919A3
WO2003060919A3 PCT/EP2003/000299 EP0300299W WO03060919A3 WO 2003060919 A3 WO2003060919 A3 WO 2003060919A3 EP 0300299 W EP0300299 W EP 0300299W WO 03060919 A3 WO03060919 A3 WO 03060919A3
Authority
WO
WIPO (PCT)
Prior art keywords
resistive memory
memory elements
thin oxide
reduced roughness
oxide layer
Prior art date
Application number
PCT/EP2003/000299
Other languages
French (fr)
Other versions
WO2003060919A2 (en
Inventor
Wolfgang Raberg
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to KR10-2004-7010858A priority Critical patent/KR20040071311A/en
Priority to EP03702435A priority patent/EP1466330A2/en
Priority to JP2003560930A priority patent/JP2005515625A/en
Publication of WO2003060919A2 publication Critical patent/WO2003060919A2/en
Publication of WO2003060919A3 publication Critical patent/WO2003060919A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)

Abstract

A resistive memory element (144), magnetic random access memory (MRAM) device, and methods of manufacturing thereof, wherein a thin oxide layer (132) is disposed within the first metal layer (136) of thememory element (144). The thin oxide layer (132) comprises an oxygen mono-layer. The roughness of subsequently-formed layers (134/118/116) is reduced, and magnetic capabilities of the resistive memory element (144) are enhanced by the use of the thin oxide layer (132) within the first metal layer (136).
PCT/EP2003/000299 2002-01-15 2003-01-14 Resistive memory elements with reduced roughness WO2003060919A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2004-7010858A KR20040071311A (en) 2002-01-15 2003-01-14 Resistive memory elements with reduced roughness
EP03702435A EP1466330A2 (en) 2002-01-15 2003-01-14 Resistive memory elements with reduced roughness
JP2003560930A JP2005515625A (en) 2002-01-15 2003-01-14 Resistive memory device having reduced roughness

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/047,456 2002-01-15
US10/047,456 US6638774B2 (en) 2002-01-15 2002-01-15 Method of making resistive memory elements with reduced roughness

Publications (2)

Publication Number Publication Date
WO2003060919A2 WO2003060919A2 (en) 2003-07-24
WO2003060919A3 true WO2003060919A3 (en) 2004-02-05

Family

ID=21949090

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/000299 WO2003060919A2 (en) 2002-01-15 2003-01-14 Resistive memory elements with reduced roughness

Country Status (7)

Country Link
US (1) US6638774B2 (en)
EP (1) EP1466330A2 (en)
JP (1) JP2005515625A (en)
KR (1) KR20040071311A (en)
CN (1) CN1653550A (en)
TW (1) TWI277201B (en)
WO (1) WO2003060919A2 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815248B2 (en) * 2002-04-18 2004-11-09 Infineon Technologies Ag Material combinations for tunnel junction cap layer, tunnel junction hard mask and tunnel junction stack seed layer in MRAM processing
US6870714B2 (en) * 2003-03-12 2005-03-22 Micron Technology, Inc. Oxide buffer layer for improved magnetic tunnel junctions
US20040184311A1 (en) * 2003-03-18 2004-09-23 Manish Sharma Magnetic sensor
US7057258B2 (en) * 2003-10-29 2006-06-06 Hewlett-Packard Development Company, L.P. Resistive memory device and method for making the same
WO2005050712A2 (en) * 2003-11-18 2005-06-02 Halliburton Energy Services, Inc. High-temperature memory systems
US7001783B2 (en) 2004-06-15 2006-02-21 Infineon Technologies Ag Mask schemes for patterning magnetic tunnel junctions
US6977181B1 (en) 2004-06-17 2005-12-20 Infincon Technologies Ag MTJ stack with crystallization inhibiting layer
US7374952B2 (en) 2004-06-17 2008-05-20 Infineon Technologies Ag Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof
US7368299B2 (en) * 2004-07-14 2008-05-06 Infineon Technologies Ag MTJ patterning using free layer wet etching and lift off techniques
US7808024B2 (en) * 2004-09-27 2010-10-05 Intel Corporation Ferroelectric polymer memory module
KR100648143B1 (en) * 2004-11-03 2006-11-24 한국과학기술연구원 Current induced magnetoresistance device
DE102004057236B4 (en) * 2004-11-26 2007-02-08 Infineon Technologies Ag Non-volatile resistive memory element
KR100644869B1 (en) * 2005-06-24 2006-11-14 광주과학기술원 Nonvolatile memory device based on resistance switching of crystalline oxide
US7903452B2 (en) * 2006-06-23 2011-03-08 Qimonda Ag Magnetoresistive memory cell
US7826258B2 (en) * 2008-03-24 2010-11-02 Carnegie Mellon University Crossbar diode-switched magnetoresistive random access memory system
KR100989180B1 (en) 2008-07-21 2010-10-20 재단법인서울대학교산학협력재단 Resistance switching element and method of fabricating the same
US8313960B1 (en) * 2011-05-03 2012-11-20 Avalanche Technology, Inc. Magnetic tunnel junction (MTJ) formation using multiple etching processes
US8148174B1 (en) * 2011-05-03 2012-04-03 Avalanche Technology, Inc. Magnetic tunnel junction (MTJ) formation with two-step process
TWI452689B (en) * 2012-01-17 2014-09-11 Winbond Electronics Corp Nonvolatile memory device and array thereof
TWI463641B (en) * 2012-02-24 2014-12-01 Nat Applied Res Laboratories Ultra-high density resistive memory structure and its manufacturing method
FR3042634B1 (en) * 2015-10-16 2017-12-15 Centre Nat Rech Scient MAGNETIC MEMORY POINT

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EP1126469A2 (en) * 2000-01-27 2001-08-22 Hewlett-Packard Company, A Delaware Corporation Magnetic memory
US20020034661A1 (en) * 2000-09-18 2002-03-21 Koninklijke Philips Electronics N.V. Method of manufacturing a spin valve structure
US20020041473A1 (en) * 2000-10-06 2002-04-11 Hiroyuki Hoshiya Magnetoresistive head containing oxide layer
EP1204123A2 (en) * 2000-11-01 2002-05-08 Fujitsu Limited Magnetoresistive film

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US5874886A (en) * 1994-07-06 1999-02-23 Tdk Corporation Magnetoresistance effect element and magnetoresistance device
US6110751A (en) * 1997-01-10 2000-08-29 Fujitsu Limited Tunnel junction structure and its manufacture and magnetic sensor
US6376337B1 (en) * 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
FR2774774B1 (en) * 1998-02-11 2000-03-03 Commissariat Energie Atomique TUNNEL EFFECT MAGNETORESISTANCE AND MAGNETIC SENSOR USING SUCH A MAGNETORESISTANCE
US6313973B1 (en) * 1998-06-30 2001-11-06 Kabushiki Kaisha Toshiba Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
JP2000099923A (en) * 1998-09-17 2000-04-07 Sony Corp Magnetic tunnel element and its manufacturing method
TW386310B (en) * 1998-10-30 2000-04-01 Chiou Jing Hung Method of producing microinductor and structure thereof
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JP2001196661A (en) * 1999-10-27 2001-07-19 Sony Corp Magnetization control method, information storage method, magnetic function element, and information storage element
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Publication number Priority date Publication date Assignee Title
EP1126469A2 (en) * 2000-01-27 2001-08-22 Hewlett-Packard Company, A Delaware Corporation Magnetic memory
US20020034661A1 (en) * 2000-09-18 2002-03-21 Koninklijke Philips Electronics N.V. Method of manufacturing a spin valve structure
US20020041473A1 (en) * 2000-10-06 2002-04-11 Hiroyuki Hoshiya Magnetoresistive head containing oxide layer
EP1204123A2 (en) * 2000-11-01 2002-05-08 Fujitsu Limited Magnetoresistive film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GILLIES M F ET AL: "EFFECT OF THIN OXIDE LAYERS INCORPORATED IN SPIN VALVE STRUCTURES", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 89, no. 11, 1 June 2001 (2001-06-01), pages 6922 - 6924, XP001051260, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
CN1653550A (en) 2005-08-10
JP2005515625A (en) 2005-05-26
WO2003060919A2 (en) 2003-07-24
KR20040071311A (en) 2004-08-11
US20030132468A1 (en) 2003-07-17
TW200301964A (en) 2003-07-16
EP1466330A2 (en) 2004-10-13
TWI277201B (en) 2007-03-21
US6638774B2 (en) 2003-10-28

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