WO2003054921A3 - Method for the production of iii-v laser components - Google Patents
Method for the production of iii-v laser components Download PDFInfo
- Publication number
- WO2003054921A3 WO2003054921A3 PCT/EP2002/012799 EP0212799W WO03054921A3 WO 2003054921 A3 WO2003054921 A3 WO 2003054921A3 EP 0212799 W EP0212799 W EP 0212799W WO 03054921 A3 WO03054921 A3 WO 03054921A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- iii
- substrate
- production
- deposited
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02805280A EP1459365A2 (en) | 2001-12-21 | 2002-11-15 | Method for the production of iii-v laser components |
JP2003555550A JP2005513797A (en) | 2001-12-21 | 2002-11-15 | Manufacturing method of III-V laser structural parts |
KR10-2004-7009461A KR20040068266A (en) | 2001-12-21 | 2002-11-15 | Method for producing iii-v laser components |
AU2002356608A AU2002356608A1 (en) | 2001-12-21 | 2002-11-15 | Method for the production of iii-v laser components |
US10/872,902 US20050025909A1 (en) | 2001-12-21 | 2004-06-21 | Method for the production of III-V laser components |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10163714.4 | 2001-12-21 | ||
DE10163714 | 2001-12-21 | ||
DE10206750.3 | 2002-02-19 | ||
DE10206750A DE10206750A1 (en) | 2001-12-21 | 2002-02-19 | Process for the manufacture of III-V laser components |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/872,902 Continuation US20050025909A1 (en) | 2001-12-21 | 2004-06-21 | Method for the production of III-V laser components |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2003054921A2 WO2003054921A2 (en) | 2003-07-03 |
WO2003054921A3 true WO2003054921A3 (en) | 2003-12-24 |
WO2003054921B1 WO2003054921B1 (en) | 2004-03-04 |
Family
ID=26010857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/012799 WO2003054921A2 (en) | 2001-12-21 | 2002-11-15 | Method for the production of iii-v laser components |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050025909A1 (en) |
EP (1) | EP1459365A2 (en) |
JP (1) | JP2005513797A (en) |
AU (1) | AU2002356608A1 (en) |
WO (1) | WO2003054921A2 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11308477B2 (en) | 2005-04-26 | 2022-04-19 | Spriv Llc | Method of reducing fraud in on-line transactions |
US11818287B2 (en) | 2017-10-19 | 2023-11-14 | Spriv Llc | Method and system for monitoring and validating electronic transactions |
US7825432B2 (en) * | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
US11354667B2 (en) | 2007-05-29 | 2022-06-07 | Spriv Llc | Method for internet user authentication |
DE102009051520B4 (en) | 2009-10-31 | 2016-11-03 | X-Fab Semiconductor Foundries Ag | Process for the production of silicon semiconductor wafers with layer structures for the integration of III-V semiconductor devices |
US11792314B2 (en) | 2010-03-28 | 2023-10-17 | Spriv Llc | Methods for acquiring an internet user's consent to be located and for authenticating the location information |
US9595805B2 (en) | 2014-09-22 | 2017-03-14 | International Business Machines Corporation | III-V photonic integrated circuits on silicon substrate |
US9344200B2 (en) | 2014-10-08 | 2016-05-17 | International Business Machines Corporation | Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth |
US9395489B2 (en) | 2014-10-08 | 2016-07-19 | International Business Machines Corporation | Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121121A (en) * | 1997-11-07 | 2000-09-19 | Toyoda Gosei Co., Ltd | Method for manufacturing gallium nitride compound semiconductor |
WO2001043174A2 (en) * | 1999-12-13 | 2001-06-14 | North Carolina State University | Fabrication of gallium nitride layers on textured silicon substrates |
WO2001095380A1 (en) * | 2000-06-09 | 2001-12-13 | Centre National De La Recherche Scientifique | Preparation method of a coating of gallium nitride |
WO2002048434A2 (en) * | 2000-12-14 | 2002-06-20 | Nitronex Corporation | Gallium nitride materials and methods for forming layers thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0174303B1 (en) * | 1994-06-24 | 1999-02-01 | 가나이 쯔또무 | Semiconductor device and method of manufacturing the same |
JP3557011B2 (en) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JP3763753B2 (en) * | 2001-06-05 | 2006-04-05 | 豊田合成株式会社 | Group III nitride compound semiconductor device and method for manufacturing the same |
JP2003152220A (en) * | 2001-11-15 | 2003-05-23 | Sharp Corp | Manufacturing method for semiconductor light emitting element and the semiconductor light emitting element |
-
2002
- 2002-11-15 EP EP02805280A patent/EP1459365A2/en not_active Withdrawn
- 2002-11-15 AU AU2002356608A patent/AU2002356608A1/en not_active Abandoned
- 2002-11-15 WO PCT/EP2002/012799 patent/WO2003054921A2/en not_active Application Discontinuation
- 2002-11-15 JP JP2003555550A patent/JP2005513797A/en active Pending
-
2004
- 2004-06-21 US US10/872,902 patent/US20050025909A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121121A (en) * | 1997-11-07 | 2000-09-19 | Toyoda Gosei Co., Ltd | Method for manufacturing gallium nitride compound semiconductor |
WO2001043174A2 (en) * | 1999-12-13 | 2001-06-14 | North Carolina State University | Fabrication of gallium nitride layers on textured silicon substrates |
WO2001095380A1 (en) * | 2000-06-09 | 2001-12-13 | Centre National De La Recherche Scientifique | Preparation method of a coating of gallium nitride |
WO2002048434A2 (en) * | 2000-12-14 | 2002-06-20 | Nitronex Corporation | Gallium nitride materials and methods for forming layers thereof |
Non-Patent Citations (1)
Title |
---|
MARCHAND H ET AL: "METALORGANIC CHEMICAL VAPOR DEPOSITION OF GAN ON SI(111): STRESS CONTROL AND APPLICATION TO FIELD-EFFECT TRANSISTORS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 89, no. 12, 15 June 2001 (2001-06-15), pages 7846 - 7851, XP001066072, ISSN: 0021-8979 * |
Also Published As
Publication number | Publication date |
---|---|
WO2003054921A2 (en) | 2003-07-03 |
JP2005513797A (en) | 2005-05-12 |
WO2003054921B1 (en) | 2004-03-04 |
US20050025909A1 (en) | 2005-02-03 |
AU2002356608A8 (en) | 2003-07-09 |
AU2002356608A1 (en) | 2003-07-09 |
EP1459365A2 (en) | 2004-09-22 |
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