WO2003050619A3 - A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography - Google Patents

A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography Download PDF

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Publication number
WO2003050619A3
WO2003050619A3 PCT/IB2002/005286 IB0205286W WO03050619A3 WO 2003050619 A3 WO2003050619 A3 WO 2003050619A3 IB 0205286 W IB0205286 W IB 0205286W WO 03050619 A3 WO03050619 A3 WO 03050619A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
mask
high resolution
resolution lithography
polymeric material
Prior art date
Application number
PCT/IB2002/005286
Other languages
French (fr)
Other versions
WO2003050619A2 (en
Inventor
Vladimir Di Troitsky
Marco Paolo Fontana
Original Assignee
Infm
Berzina Tatiana Hf
Berzine Roman Hm
Troitsky Anastasia Hm
Marco Paolo Fontana
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infm, Berzina Tatiana Hf, Berzine Roman Hm, Troitsky Anastasia Hm, Marco Paolo Fontana filed Critical Infm
Priority to AU2002366691A priority Critical patent/AU2002366691A1/en
Publication of WO2003050619A2 publication Critical patent/WO2003050619A2/en
Publication of WO2003050619A3 publication Critical patent/WO2003050619A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method is described for producing a mask for high definition lithography, which includes the steps of providing a substrate; depositing on this substrate a first layer of a polymeric material sensitive to exposure to charged particles; depositing on this first layer a second layer of a polymeric material sensitive to electromagnetic radiation; exposing the second layer to electromagnetic radiation according to a predetermined topography so as to define first and second portions of the second layer which have been exposed or not exposed respectively to the electromagnetic. radiation; removing either the first or the second portion of the second layer, and also the step of irradiating the first layer, partially covered by the first or second layer which was not removed, by means of a source of low energy charged particles. A mask is also described for high definition lithography, produced according to the method described above and a multi-layer element for high definition lithography which includes a first layer of a polymeric material sensitive to exposure to charged particles; a second layer of a polymeric material sensitive to electromagnetic radiation, in which the first and the second layer are Langmuir-Blodgett films.
PCT/IB2002/005286 2001-12-12 2002-12-11 A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography WO2003050619A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002366691A AU2002366691A1 (en) 2001-12-12 2002-12-11 A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITPD2001A000290 2001-12-12
IT2001PD000290A ITPD20010290A1 (en) 2001-12-12 2001-12-12 METHOD FOR THE CREATION OF A HIGH RESOLUTION LITHOGRAPHY MASK, MASK OBTAINED ACCORDING TO THIS METHOD AND MULTISTRAT ELEMENT

Publications (2)

Publication Number Publication Date
WO2003050619A2 WO2003050619A2 (en) 2003-06-19
WO2003050619A3 true WO2003050619A3 (en) 2003-10-09

Family

ID=11452494

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/005286 WO2003050619A2 (en) 2001-12-12 2002-12-11 A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography

Country Status (3)

Country Link
AU (1) AU2002366691A1 (en)
IT (1) ITPD20010290A1 (en)
WO (1) WO2003050619A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI258061B (en) 2004-02-27 2006-07-11 Powerchip Semiconductor Corp Device and method for testing an exposure apparatus
DE102006050363B4 (en) 2006-10-25 2018-08-16 Advanced Mask Technology Center Gmbh & Co. Kg A process for producing a photomask, a process for structuring a layer or a layer stack and resist stacks on a mask substrate
US20140170310A1 (en) * 2010-10-08 2014-06-19 Li Jia Colloidal lithography methods for fabricating microscopic and nanoscopic particle patterns on substrate surfaces
JP2013191653A (en) * 2012-03-13 2013-09-26 Hitachi Ltd Method for manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04368135A (en) * 1991-06-14 1992-12-21 Mitsubishi Electric Corp Formation of t-shaped pattern
US6218056B1 (en) * 1999-03-30 2001-04-17 International Business Machines Corporation Method of making highly defined bilayer lift-off mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04368135A (en) * 1991-06-14 1992-12-21 Mitsubishi Electric Corp Formation of t-shaped pattern
US6218056B1 (en) * 1999-03-30 2001-04-17 International Business Machines Corporation Method of making highly defined bilayer lift-off mask

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DAVID C ET AL: "Low energy electron proximity printing using a self-assembled monolayer resist", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 30, no. 1, 1996, pages 57 - 60, XP004003031, ISSN: 0167-9317 *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 245 (E - 1365) 17 May 1993 (1993-05-17) *

Also Published As

Publication number Publication date
WO2003050619A2 (en) 2003-06-19
ITPD20010290A1 (en) 2003-06-12
AU2002366691A8 (en) 2003-06-23
AU2002366691A1 (en) 2003-06-23

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