AU2002366691A1 - A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography - Google Patents

A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography

Info

Publication number
AU2002366691A1
AU2002366691A1 AU2002366691A AU2002366691A AU2002366691A1 AU 2002366691 A1 AU2002366691 A1 AU 2002366691A1 AU 2002366691 A AU2002366691 A AU 2002366691A AU 2002366691 A AU2002366691 A AU 2002366691A AU 2002366691 A1 AU2002366691 A1 AU 2002366691A1
Authority
AU
Australia
Prior art keywords
high resolution
mask
resolution lithography
producing
layer element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002366691A
Other versions
AU2002366691A8 (en
Inventor
Marco Paolo Fontana
Vladimir Troitsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Istituto Nazionale per la Fisica della Materia INFM CNR
Original Assignee
Istituto Nazionale per la Fisica della Materia INFM CNR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Istituto Nazionale per la Fisica della Materia INFM CNR filed Critical Istituto Nazionale per la Fisica della Materia INFM CNR
Publication of AU2002366691A8 publication Critical patent/AU2002366691A8/en
Publication of AU2002366691A1 publication Critical patent/AU2002366691A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
AU2002366691A 2001-12-12 2002-12-11 A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography Abandoned AU2002366691A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITPD2001A000290 2001-12-12
IT2001PD000290A ITPD20010290A1 (en) 2001-12-12 2001-12-12 METHOD FOR THE CREATION OF A HIGH RESOLUTION LITHOGRAPHY MASK, MASK OBTAINED ACCORDING TO THIS METHOD AND MULTISTRAT ELEMENT
PCT/IB2002/005286 WO2003050619A2 (en) 2001-12-12 2002-12-11 A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography

Publications (2)

Publication Number Publication Date
AU2002366691A8 AU2002366691A8 (en) 2003-06-23
AU2002366691A1 true AU2002366691A1 (en) 2003-06-23

Family

ID=11452494

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002366691A Abandoned AU2002366691A1 (en) 2001-12-12 2002-12-11 A method for producing a mask for high resolution lithography, a mask obtained thereby and a multi-layer element for high resolution lithography

Country Status (3)

Country Link
AU (1) AU2002366691A1 (en)
IT (1) ITPD20010290A1 (en)
WO (1) WO2003050619A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI258061B (en) 2004-02-27 2006-07-11 Powerchip Semiconductor Corp Device and method for testing an exposure apparatus
DE102006050363B4 (en) 2006-10-25 2018-08-16 Advanced Mask Technology Center Gmbh & Co. Kg A process for producing a photomask, a process for structuring a layer or a layer stack and resist stacks on a mask substrate
US20140170310A1 (en) * 2010-10-08 2014-06-19 Li Jia Colloidal lithography methods for fabricating microscopic and nanoscopic particle patterns on substrate surfaces
JP2013191653A (en) * 2012-03-13 2013-09-26 Hitachi Ltd Method for manufacturing semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04368135A (en) * 1991-06-14 1992-12-21 Mitsubishi Electric Corp Formation of t-shaped pattern
US6218056B1 (en) * 1999-03-30 2001-04-17 International Business Machines Corporation Method of making highly defined bilayer lift-off mask

Also Published As

Publication number Publication date
WO2003050619A2 (en) 2003-06-19
ITPD20010290A1 (en) 2003-06-12
WO2003050619A3 (en) 2003-10-09
AU2002366691A8 (en) 2003-06-23

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase