WO2003049156A3 - System and method for micro electro mechanical etching - Google Patents

System and method for micro electro mechanical etching Download PDF

Info

Publication number
WO2003049156A3
WO2003049156A3 PCT/US2002/038679 US0238679W WO03049156A3 WO 2003049156 A3 WO2003049156 A3 WO 2003049156A3 US 0238679 W US0238679 W US 0238679W WO 03049156 A3 WO03049156 A3 WO 03049156A3
Authority
WO
WIPO (PCT)
Prior art keywords
reactor
gas
substrate
etching
electro mechanical
Prior art date
Application number
PCT/US2002/038679
Other languages
French (fr)
Other versions
WO2003049156A2 (en
Inventor
Robert W Grant
Original Assignee
Primaxx Inc
Robert W Grant
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Primaxx Inc, Robert W Grant filed Critical Primaxx Inc
Priority to AU2002353039A priority Critical patent/AU2002353039A1/en
Publication of WO2003049156A2 publication Critical patent/WO2003049156A2/en
Publication of WO2003049156A3 publication Critical patent/WO2003049156A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00936—Releasing the movable structure without liquid etchant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/0025—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method for Micro Electro Mechanical Etching (MEMS) etching comprising: providing a reactor 100 positioning a MEMS substrate 302 within said reactor, and release etching said substrate with a gas phase mixture 312 of a halide-containing compound and an-OH containing solvent to produce a MEMS device. The gas also includes an inert carrier gas and is at reduced pressure, preferably about 26.66 • 103 N/m2 (200 Torr). The gas is heated to between 50°C and 75°C. The process conditions in said reactor are controlled such that the etch rate is surface-reaction limited. A plurality of substrates 302, 304, 306 are positioned within said reactor with their substrate planes parallel and the reactive gas is flowed in a direction parallel to the substrate planes.
PCT/US2002/038679 2001-12-04 2002-12-04 System and method for micro electro mechanical etching WO2003049156A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002353039A AU2002353039A1 (en) 2001-12-04 2002-12-04 System and method for micro electro mechanical etching

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33761101P 2001-12-04 2001-12-04
US60/337,611 2001-12-04

Publications (2)

Publication Number Publication Date
WO2003049156A2 WO2003049156A2 (en) 2003-06-12
WO2003049156A3 true WO2003049156A3 (en) 2004-02-12

Family

ID=23321247

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/038679 WO2003049156A2 (en) 2001-12-04 2002-12-04 System and method for micro electro mechanical etching

Country Status (2)

Country Link
AU (1) AU2002353039A1 (en)
WO (1) WO2003049156A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL165212A (en) * 2004-11-15 2012-05-31 Elbit Systems Electro Optics Elop Ltd Device for scanning light
US9651417B2 (en) 2012-02-15 2017-05-16 Apple Inc. Scanning depth engine
CN104221058B (en) 2012-03-22 2017-03-08 苹果公司 Scanning lens array equipped with universal joint
WO2014016794A1 (en) 2012-07-26 2014-01-30 Primesense Ltd. Dual-axis scanning mirror
US9482863B2 (en) 2012-10-23 2016-11-01 Apple Inc. Production of micro-mechanical devices
US9784838B1 (en) 2014-11-26 2017-10-10 Apple Inc. Compact scanner with gimbaled optics
US9835853B1 (en) 2014-11-26 2017-12-05 Apple Inc. MEMS scanner with mirrors of different sizes
US9798135B2 (en) 2015-02-16 2017-10-24 Apple Inc. Hybrid MEMS scanning module
US9897801B2 (en) 2015-09-30 2018-02-20 Apple Inc. Multi-hinge mirror assembly
US9703096B2 (en) 2015-09-30 2017-07-11 Apple Inc. Asymmetric MEMS mirror assembly
US10488652B2 (en) 2016-09-21 2019-11-26 Apple Inc. Prism-based scanner
CN114208006A (en) 2019-08-18 2022-03-18 苹果公司 Force-balanced micromirror with electromagnetic actuation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
EP0805483A1 (en) * 1995-10-17 1997-11-05 Asm Japan K.K. Semiconductor treatment apparatus
US5880032A (en) * 1995-07-31 1999-03-09 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing a semiconductor device
EP1201603A2 (en) * 2000-10-27 2002-05-02 Air Products And Chemicals, Inc. Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
US5880032A (en) * 1995-07-31 1999-03-09 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing a semiconductor device
EP0805483A1 (en) * 1995-10-17 1997-11-05 Asm Japan K.K. Semiconductor treatment apparatus
EP1201603A2 (en) * 2000-10-27 2002-05-02 Air Products And Chemicals, Inc. Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JONG HYUN LEE ET AL: "Fabrication of surface-micromachined polysilicon microactuators using HF gas-phase etching process", MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS). 1996 INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS). 1998 INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, ATLANTA, GA, USA, 17-22 NOV. 1996, 1996, NEW YORK, NY, USA, ASME, USA, PAGE(S) 373 - 377, ISBN: 0-7918-1541-2, XP009015807 *
WON ICK JANG ET AL: "Fabrication of surface-micromachined thermally driven micropump by anhydrous HF gas-phase etching with 2-propanol", MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY VI, SANTA CLARA, CA, USA, 18-20 SEPT. 2000, PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 2000, SPIE-INT. SOC. OPT. ENG, USA, PAGE(S) 444 - 450, ISSN: 0277-786X, XP009015808 *
WON ICK JANG ET AL: "Silicon surface micromachining by anhydrous HF gas-phase etching with methanol", MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY IV, SANTA CLARA, CA, USA, 21-22 SEPT. 1998, PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 1998, SPIE-INT. SOC. OPT. ENG, USA, PAGE(S) 143 - 150, ISSN: 0277-786X, XP009015809 *

Also Published As

Publication number Publication date
WO2003049156A2 (en) 2003-06-12
AU2002353039A1 (en) 2003-06-17

Similar Documents

Publication Publication Date Title
WO2003049156A3 (en) System and method for micro electro mechanical etching
EP2351076B1 (en) Method and apparatus for wafer bonding with enhanced wafer mating
US9859128B2 (en) Self-aligned shielding of silicon oxide
CN103168344A (en) Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
US9875907B2 (en) Self-aligned shielding of silicon oxide
US20100308014A1 (en) Method and apparatus for etching
WO2004082003A3 (en) Apparatuses and methods for forming a substantially facet-free epitaxial film
EP0955668A3 (en) Process for manufacture of micro electromechanical devices having high electrical isolation
Gao et al. Recent progress toward a manufacturable polycrystalline SiC surface micromachining technology
WO2003060986A2 (en) Method of forming a removable support with a sacrificial layers and of transferring devices
WO2005043623A3 (en) Method for forming a dielectric on a metallic layer and capacitor assembly
WO2002095497A3 (en) Method of lift-off microstructuring deposition material on a substrate, substrates obtainable by the method, and use thereof
WO2003044242A3 (en) Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
EP1059266A3 (en) Mass synthesis method of high purity carbon nanotubes vertically aligned over large-size substrate using thermal chemical vapor deposition
WO1989003122A1 (en) Oxide removal from metallic contact bumps formed on semiconductor devices to improve hybridization cold-welds
EP1384745A3 (en) Polyvinyl butyral films prepared by coating methods
EP1090413A4 (en) Method of forming high aspect ratio apertures
WO2004068538A3 (en) Object-moving method, object-moving apparatus and production process using the method
AU2003247130A1 (en) Method of transferring of a layer of strained semiconductor material
CA2365902A1 (en) Method for increasing the yield in processes of deposition of thin layers onto a substrate
WO2004109773A3 (en) Method and system for heating a substrate using a plasma
EP1296358A3 (en) Process for producing semiconductor substrates
EP2051282A3 (en) Metal film production apparatus
WO2015180555A1 (en) Mems-based method for manufacturing sensor
US6818564B1 (en) Method for etching a tapered bore in a silicon substrate, and a semiconductor wafer comprising the substrate

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP