WO2003044837A2 - Procede d'implantation ionique et implanteur servant a mettre en oeuvre ce procede - Google Patents

Procede d'implantation ionique et implanteur servant a mettre en oeuvre ce procede Download PDF

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Publication number
WO2003044837A2
WO2003044837A2 PCT/GB2002/004886 GB0204886W WO03044837A2 WO 2003044837 A2 WO2003044837 A2 WO 2003044837A2 GB 0204886 W GB0204886 W GB 0204886W WO 03044837 A2 WO03044837 A2 WO 03044837A2
Authority
WO
WIPO (PCT)
Prior art keywords
ions
abundance
ion
atoms
enriched
Prior art date
Application number
PCT/GB2002/004886
Other languages
English (en)
Other versions
WO2003044837A3 (fr
Inventor
Adrian Murrell
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0127692A external-priority patent/GB0127692D0/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to AU2002335988A priority Critical patent/AU2002335988A1/en
Publication of WO2003044837A2 publication Critical patent/WO2003044837A2/fr
Publication of WO2003044837A3 publication Critical patent/WO2003044837A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane

Definitions

  • the invention is concerned with a method of ion implantation and also an ion implanter for performing a method of ion implantation.
  • a molecular ion beam extracted from a decaborane ion source typically contains molecular ions of BH with a range of masses. This range of masses arises because the individual molecules in the beam will have a varying number of hydrogen atoms. Also, a variation in mass arises because boron occurs naturally in two isotopes: mass 10 having a natural abundance of about 19% and mass 11 having a natural abundance of about 81%.
  • the present invention provides a method of ion implantation comprising the steps of producing an ion beam including ions each containing a predetermined plurality of atoms of a species to be implanted.
  • the atomic species to be implanted is selected to be one occurring naturally in two primary isotopes, with the least abundant of these primary isotopes having a lower natural abundance which is at least 1% of the total and the most abundant of the primary isotopes having a higher natural abundance.
  • the atomic species contained in the ions of the beam are isotopically enriched so that one isotope has an enriched abundance which is greater than the above mentioned higher natural abundance.
  • the method further includes mass selecting from the beam the ions containing said plurality of said atoms and directing the mass selected ions at a target for implantation therein.
  • the spread of masses in the resulting ion beam can be significantly reduced.
  • the atomic species may be boron which is isotopically enriched to increase the abundance of the isotope n B.
  • the enriched abundance of n B is at least 99% and the ions each contain ten boron atoms.
  • the invention also contemplates an ion implanter provided with a source of isotopically enriched cluster ions.
  • the ion implanter illustrated comprises an ion source 10, a mass selection magnet 11, a mass selection slit 12 and a process chamber 13.
  • a plasma is formed in an arc chamber 14. Ions of the plasma are extracted from the arc chamber through a slit 15, by means of an extraction potential applied to an extraction electrode 16.
  • An extracted ion beam 17 passes through a further shield electrode 17 which is typically held at the potential of the mass selector 11.
  • the mass selector 11 comprises a sector magnet so that ions of different masses (or more strictly momenta) are spatially separated as they travel around the sector towards the mass selection slit 12.
  • the mass selection slit 12 is arranged to permit only ions of a selected desired mass or range of masses to travel onwards into the process chamber 13 for implantation in a wafer 18 held on a wafer holder 19.
  • the ion beam 20 arriving at the wafer 18 in the process chamber 13 has a cross-sectional area which is smaller than the area of the wafer 18 and an arrangement is provided for mutually scanning the wafer holder 19 relative to the ion beam 20 to ensure all parts of the wafer are uniformly implanted.
  • the scanning arrangement may include mechanical scanning by means of a scanning arm 21 shown schematically and in part in the drawing.
  • Other scanning arrangements may include hybrid arrangements in which the ion beam 20 is scanned, e.g. electromagnetically or electrostatically, in one plane, and the wafer holder 19 is mechanically scanned through the plane of the scanned beam. Two dimensional beam scanning arrangements may also be used with embodiments of this invention.
  • the ion implanter may be employed in different embodiments of the present invention.
  • the details of the design and operation of the ion source 10 are not important in the performance of the present invention, except insofar as they relate to the feed material used for the arc chamber 14 and other arrangements which promotes the production in the arc chamber of desired cluster ions (or ions with multiple atoms of the implant species) .
  • an oven 22 contains an amount of solid decaborane (B 10 H 14 ) which has been prepared using enriched boron so that the enriched abundance of n B is higher than the natural abundance of about 81%.
  • Known techniques may be used for providing the enriched boron.
  • One technique is to centrifuge gaseous BF 3 . Before centrifuging, multiple BF 3 molecules are reacted with an adduct to form a large composite molecule, so that there will be then a larger range of masses of BF 3 composite molecules resulting from the differing numbers of the two isotopes of B in the composite molecules. Multiple centrifuging iterations are performed, each time selecting the higher (or possibly the lower) mass fraction of composite molecules, dissociating the composite molecules in the selected fraction to individual BF 3 molecules and then reacting them again to reform large molecules, repeating the centrifuging and again selecting the appropriate higher (or lower) fraction.
  • the purity of a particular isotope ( U B for selecting higher mass fractions and 10 B for selecting lower mass fractions) is increased to a desired level of enrichment.
  • the enriched BF 3 is then used to make enriched decaborane in ways known in the art.
  • United States Patent No. 6086837 to Cowan et al discloses a medical therapeutic use of enriched decaborane in which at least about 90% of the boron atoms are 10 B.
  • the patent also discloses a method for the production of the decaborane from the enriched boron.
  • the decaborane comprises primarily 10 B atoms.
  • it will be easier and preferable to use decaborane in which the U B abundance is increased and enriched abundance levels for U B of 99% or higher are achievable using known techniques.
  • boron atoms typically have masses associated with the boron atoms of between 100 and 110 in the following proportions:
  • the abundance of mass 110 is over 90%.
  • the implant apparatus illustrated in the drawing is run using 99% n B enriched decaborane as feed material, any spread in the masses of the beam ions is almost entirely due to the beam ions containing differing numbers of hydrogen atoms. If a beam could be generated which is predominantly B 10 H 14 , then most of the boron in the beam could be transported for implantation in the wafer 18 when setting the mass selection slit 12 wide enough only to pass a single mass 124. This can be particularly useful in avoiding contamination of the implanted wafer 18 with other materials which may have a closely similar mass to the value 124 ( U B 10 H 14 ) , for example In at mass 115 or Sb at masses 121 or 123.
  • the method and apparatus of the invention can also be used to improve the performance when producing beams of ions containing multiple atoms of other species for implantation.
  • the techniques may also be used for cluster ion beams. Whenever the atomic species to be implanted occurs naturally in two or more isotopes, improved performance can be obtained by using an enriched form of this species so that the range of masses in the ion beam produced is reduced.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Selon cette invention, des ions sont implantés dans un substrat à l'aide d'un faisceau d'ions de décaborane contenant jusqu'à 10 atomes de bore dans chaque ion. Le décaborane intervient naturellement dans deux isotopes. Avant d'être utilisé dans la source d'ions pour produire le faisceau de décaborane, le bore utilisé dans la charge d'alimentation de décaborane est enrichi de manière isotopique afin d'accroître l'abondance de l'isotope le plus abondant. Le rapport masse-charge obtenu dans le faisceau d'ions à partir de l'analyseur de masse est ainsi réduit.
PCT/GB2002/004886 2001-11-19 2002-10-30 Procede d'implantation ionique et implanteur servant a mettre en oeuvre ce procede WO2003044837A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002335988A AU2002335988A1 (en) 2001-11-19 2002-10-30 Ion imlantation method and apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0127692.2 2001-11-19
GB0127692A GB0127692D0 (en) 2001-11-19 2001-11-19 Method of ion implantation and an implanter for performing the method
GB0205651A GB0205651D0 (en) 2001-11-19 2002-03-11 Method of ION implantation and an implanter for performing the method
GB0205651.3 2002-03-11

Publications (2)

Publication Number Publication Date
WO2003044837A2 true WO2003044837A2 (fr) 2003-05-30
WO2003044837A3 WO2003044837A3 (fr) 2003-10-16

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Country Status (2)

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AU (1) AU2002335988A1 (fr)
WO (1) WO2003044837A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7524477B2 (en) 2004-02-02 2009-04-28 Semequip Inc. Method of production of B10H102− ammonium salts and methods of production of B18H22
US7641879B2 (en) 2004-01-30 2010-01-05 Semequip Inc. Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US7955580B2 (en) 2004-01-22 2011-06-07 Semequip, Inc. Isotopically-enriched boranes and methods of preparing them
US8803112B2 (en) 2012-08-28 2014-08-12 Praxair Technology, Inc. Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0155576A1 (fr) * 1984-03-02 1985-09-25 Hitachi, Ltd. Dispositif semiconducteur résistant aux rayonnements
EP0612106A1 (fr) * 1993-02-16 1994-08-24 Texas Instruments Incorporated Dispositif électronique avec un taux réduit d'erreurs du type soft error causé par des particules alpha
EP0954008A2 (fr) * 1998-04-30 1999-11-03 Eaton Corporation Vaporisateur de décaborane pour source d'ions

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114665A (ja) * 1988-10-25 1990-04-26 Nec Corp 耐放射線半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0155576A1 (fr) * 1984-03-02 1985-09-25 Hitachi, Ltd. Dispositif semiconducteur résistant aux rayonnements
EP0612106A1 (fr) * 1993-02-16 1994-08-24 Texas Instruments Incorporated Dispositif électronique avec un taux réduit d'erreurs du type soft error causé par des particules alpha
EP0954008A2 (fr) * 1998-04-30 1999-11-03 Eaton Corporation Vaporisateur de décaborane pour source d'ions

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 338 (E-0954), 20 July 1990 (1990-07-20) & JP 02 114665 A (NEC CORP), 26 April 1990 (1990-04-26) *
PEREL A S ET AL: "Decaborane ion implantation" 2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY PROCEEDINGS, 2000, page 304-307 XP002242178 Piscataway, NJ, US cited in the application *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7955580B2 (en) 2004-01-22 2011-06-07 Semequip, Inc. Isotopically-enriched boranes and methods of preparing them
US7641879B2 (en) 2004-01-30 2010-01-05 Semequip Inc. Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
US8084007B2 (en) 2004-01-30 2011-12-27 Semequip Inc. Methods of synthesis of isotropically enriched borohydride and methods of synthesis of isotropically enriched boranes
US7524477B2 (en) 2004-02-02 2009-04-28 Semequip Inc. Method of production of B10H102− ammonium salts and methods of production of B18H22
US8803112B2 (en) 2012-08-28 2014-08-12 Praxair Technology, Inc. Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation

Also Published As

Publication number Publication date
AU2002335988A8 (en) 2003-06-10
AU2002335988A1 (en) 2003-06-10
WO2003044837A3 (fr) 2003-10-16

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