AU2002335988A8 - Ion imlantation method and apparatus - Google Patents

Ion imlantation method and apparatus

Info

Publication number
AU2002335988A8
AU2002335988A8 AU2002335988A AU2002335988A AU2002335988A8 AU 2002335988 A8 AU2002335988 A8 AU 2002335988A8 AU 2002335988 A AU2002335988 A AU 2002335988A AU 2002335988 A AU2002335988 A AU 2002335988A AU 2002335988 A8 AU2002335988 A8 AU 2002335988A8
Authority
AU
Australia
Prior art keywords
imlantation
ion
ion imlantation
imlantation method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002335988A
Other versions
AU2002335988A1 (en
Inventor
Adrian Murrell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0127692A external-priority patent/GB0127692D0/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of AU2002335988A8 publication Critical patent/AU2002335988A8/en
Publication of AU2002335988A1 publication Critical patent/AU2002335988A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
AU2002335988A 2001-11-19 2002-10-30 Ion imlantation method and apparatus Abandoned AU2002335988A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB0127692.2 2001-11-19
GB0127692A GB0127692D0 (en) 2001-11-19 2001-11-19 Method of ion implantation and an implanter for performing the method
GB0205651A GB0205651D0 (en) 2001-11-19 2002-03-11 Method of ION implantation and an implanter for performing the method
GB0205651.3 2002-03-11
PCT/GB2002/004886 WO2003044837A2 (en) 2001-11-19 2002-10-30 Ion imlantation method and apparatus

Publications (2)

Publication Number Publication Date
AU2002335988A8 true AU2002335988A8 (en) 2003-06-10
AU2002335988A1 AU2002335988A1 (en) 2003-06-10

Family

ID=26246784

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002335988A Abandoned AU2002335988A1 (en) 2001-11-19 2002-10-30 Ion imlantation method and apparatus

Country Status (2)

Country Link
AU (1) AU2002335988A1 (en)
WO (1) WO2003044837A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI375660B (en) 2004-01-22 2012-11-01 Semequip Inc Isotopically-enriched boranes and methods of preparing them
TWI372725B (en) 2004-01-30 2012-09-21 Semequip Inc Methods of synthesis of isotopically enriched borohydride and methods of synthesis of isotopically enriched boranes
WO2005074586A2 (en) 2004-02-02 2005-08-18 Semequip Inc. Method of production of b10h102- ammonium salts and methods of production of b18h22
JP6250677B2 (en) 2012-08-28 2017-12-20 プラクスエア・テクノロジー・インコーポレイテッド Silicon-containing dopant composition, system and method using the same composition to improve ion beam current and performance during silicon ion implantation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60183768A (en) * 1984-03-02 1985-09-19 Hitachi Ltd Radiation-resisting reinforced semiconductor element
JPH02114665A (en) * 1988-10-25 1990-04-26 Nec Corp Radiation resistant semiconductor device
US5395783A (en) * 1993-02-16 1995-03-07 Texas Instruments Incorporated Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
US6107634A (en) * 1998-04-30 2000-08-22 Eaton Corporation Decaborane vaporizer

Also Published As

Publication number Publication date
WO2003044837A2 (en) 2003-05-30
WO2003044837A3 (en) 2003-10-16
AU2002335988A1 (en) 2003-06-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase