WO2003041120A3 - Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method - Google Patents

Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method Download PDF

Info

Publication number
WO2003041120A3
WO2003041120A3 PCT/FR2002/003766 FR0203766W WO03041120A3 WO 2003041120 A3 WO2003041120 A3 WO 2003041120A3 FR 0203766 W FR0203766 W FR 0203766W WO 03041120 A3 WO03041120 A3 WO 03041120A3
Authority
WO
WIPO (PCT)
Prior art keywords
photodetector
making
domain
energy
low
Prior art date
Application number
PCT/FR2002/003766
Other languages
French (fr)
Other versions
WO2003041120A2 (en
Inventor
Benoit Guizard
Francois Foulon
Original Assignee
Commissariat Energie Atomique
Benoit Guizard
Francois Foulon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Benoit Guizard, Francois Foulon filed Critical Commissariat Energie Atomique
Priority to EP02796835A priority Critical patent/EP1466349A2/en
Priority to CA002465882A priority patent/CA2465882A1/en
Publication of WO2003041120A2 publication Critical patent/WO2003041120A2/en
Publication of WO2003041120A3 publication Critical patent/WO2003041120A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

The invention concerns a method for making a semiconductor photodetector, in particular in the low-energy UV-X domain, and a photodetector obtained by said method. The invention is characterized in that it consists in making a photodetecting element (22) in photodetecting semiconductor material, said element being provided with electrodes (24, 26). After making the photodetecting element and without impairing the electrodes, it consists in removing a surface layer of the photodetecting semiconductor material to produce a new surface layer having the electrical properties of said material volume.
PCT/FR2002/003766 2001-11-06 2002-11-04 Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method WO2003041120A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP02796835A EP1466349A2 (en) 2001-11-06 2002-11-04 Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method
CA002465882A CA2465882A1 (en) 2001-11-06 2002-11-04 Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0114326A FR2831992B1 (en) 2001-11-06 2001-11-06 METHOD FOR MANUFACTURING A SEMICONDUCTOR PHOTODETECTOR, ESPECIALLY IN THE LOW ENERGY UV-X DOMAIN, AND PHODETECTOR OBTAINED BY THIS METHOD
FR01/14326 2001-11-06

Publications (2)

Publication Number Publication Date
WO2003041120A2 WO2003041120A2 (en) 2003-05-15
WO2003041120A3 true WO2003041120A3 (en) 2003-11-27

Family

ID=8869100

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2002/003766 WO2003041120A2 (en) 2001-11-06 2002-11-04 Method for making a semiconductor photodetector, in particular in the low-energy uv-x domain, and photodetector obtained by said method

Country Status (4)

Country Link
EP (1) EP1466349A2 (en)
CA (1) CA2465882A1 (en)
FR (1) FR2831992B1 (en)
WO (1) WO2003041120A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581099A (en) * 1985-01-30 1986-04-08 Canon Kabushiki Kaisha Method for preparation of a photosensor
US5404007A (en) * 1992-05-29 1995-04-04 The United States Of America As Represented By The Secretary Of The Air Force Radiation resistant RLG detector systems
US5780916A (en) * 1995-10-10 1998-07-14 University Of Delaware Asymmetric contacted metal-semiconductor-metal photodetectors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581099A (en) * 1985-01-30 1986-04-08 Canon Kabushiki Kaisha Method for preparation of a photosensor
US5404007A (en) * 1992-05-29 1995-04-04 The United States Of America As Represented By The Secretary Of The Air Force Radiation resistant RLG detector systems
US5780916A (en) * 1995-10-10 1998-07-14 University Of Delaware Asymmetric contacted metal-semiconductor-metal photodetectors

Also Published As

Publication number Publication date
FR2831992B1 (en) 2004-01-09
CA2465882A1 (en) 2003-05-15
WO2003041120A2 (en) 2003-05-15
FR2831992A1 (en) 2003-05-09
EP1466349A2 (en) 2004-10-13

Similar Documents

Publication Publication Date Title
HK1044152A1 (en) Material for photo-alignment layer, photo-alignment layer and method of manufacturing the same
WO2006138491A3 (en) Back-to-front via process
WO2001039288A8 (en) Method for patterning devices
AU2001251734A1 (en) Semiconductor processing methods of removing conductive material
WO2002016973A3 (en) Electronic and optical devices and methods of forming these devices
AU2002305598A1 (en) Membrane for micro-electro-mechanical switch, and methods of making and using it
WO2002089178A3 (en) Embedded metal nanocrystals
WO2002090245A3 (en) Methods of forming microstructure devices
WO2003036732A3 (en) Compact vertical hall sensor
TW200504924A (en) Inductor with high quality factor and method of fabricating the same
SG91948A1 (en) Manufacturing method of multilayer substrate and multilayer substrate produced by the manufacturing method
AU2001244643A1 (en) Production method of iii nitride compound semiconductor and iii nitride compoundsemiconductor element
MXPA04005553A (en) Film structures and methods of making film structures.
DE69923424D1 (en) IMPROVED MANUFACTURING PROCESS OF THIN LAYERS OF SEMICONDUCTOR MATERIAL
WO2004049042A3 (en) Dielectric waveguide and method of making the same
WO2004109770A3 (en) Through wafer via process and amplifier with through wafer via
WO2005033685A3 (en) Sensor platforms utilising nanoporous membranes
AU2001290268A1 (en) Composite electrode material and method for producing the same, and electrochemical element using the same
AU2003214655A1 (en) The method of chemical surface modification of polytetrafluoroethylene materials
WO2003058327A1 (en) Surface type optical modulator and its manufacturing method
EP1148543A3 (en) Semiconductor device and process of manufacturing the same
EP1217051A3 (en) Surface treating agent for ligneous floorings and process for manufacturing the same
TW200729320A (en) Method for manufacturing a semiconductor component
HK1040670A1 (en) Semiconductor substrate having increased facture strength and method of forming the same.
TW200723386A (en) Surface topology improvement method for plug surface areas

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CA JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2002796835

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2465882

Country of ref document: CA

WWP Wipo information: published in national office

Ref document number: 2002796835

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP

WWW Wipo information: withdrawn in national office

Ref document number: 2002796835

Country of ref document: EP