AU2001251734A1 - Semiconductor processing methods of removing conductive material - Google Patents

Semiconductor processing methods of removing conductive material

Info

Publication number
AU2001251734A1
AU2001251734A1 AU2001251734A AU5173401A AU2001251734A1 AU 2001251734 A1 AU2001251734 A1 AU 2001251734A1 AU 2001251734 A AU2001251734 A AU 2001251734A AU 5173401 A AU5173401 A AU 5173401A AU 2001251734 A1 AU2001251734 A1 AU 2001251734A1
Authority
AU
Australia
Prior art keywords
conductive material
processing methods
semiconductor processing
removing conductive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001251734A
Inventor
Trung Tri Doan
Scott G Meikle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001251734A1 publication Critical patent/AU2001251734A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
AU2001251734A 2000-03-23 2001-03-22 Semiconductor processing methods of removing conductive material Abandoned AU2001251734A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09534820 2000-03-23
US09/534,820 US6582281B2 (en) 2000-03-23 2000-03-23 Semiconductor processing methods of removing conductive material
PCT/US2001/040358 WO2001071796A2 (en) 2000-03-23 2001-03-22 Method for electrochemical polishing of a conductive material

Publications (1)

Publication Number Publication Date
AU2001251734A1 true AU2001251734A1 (en) 2001-10-03

Family

ID=24131656

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001251734A Abandoned AU2001251734A1 (en) 2000-03-23 2001-03-22 Semiconductor processing methods of removing conductive material

Country Status (6)

Country Link
US (4) US6582281B2 (en)
JP (1) JP3823056B2 (en)
KR (1) KR100562440B1 (en)
AU (1) AU2001251734A1 (en)
DE (1) DE10195941B4 (en)
WO (1) WO2001071796A2 (en)

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US7168084B1 (en) 1992-12-09 2007-01-23 Sedna Patent Services, Llc Method and apparatus for targeting virtual objects
US7686935B2 (en) * 1998-10-26 2010-03-30 Novellus Systems, Inc. Pad-assisted electropolishing
US7427337B2 (en) * 1998-12-01 2008-09-23 Novellus Systems, Inc. System for electropolishing and electrochemical mechanical polishing
US7578923B2 (en) * 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6991526B2 (en) * 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US20040182721A1 (en) * 2003-03-18 2004-09-23 Applied Materials, Inc. Process control in electro-chemical mechanical polishing
US6582281B2 (en) * 2000-03-23 2003-06-24 Micron Technology, Inc. Semiconductor processing methods of removing conductive material
US6722950B1 (en) * 2000-11-07 2004-04-20 Planar Labs Corporation Method and apparatus for electrodialytic chemical mechanical polishing and deposition
JP2002254248A (en) * 2001-02-28 2002-09-10 Sony Corp Electrochemical machining device
US6776693B2 (en) * 2001-12-19 2004-08-17 Applied Materials Inc. Method and apparatus for face-up substrate polishing
US20040072445A1 (en) * 2002-07-11 2004-04-15 Applied Materials, Inc. Effective method to improve surface finish in electrochemically assisted CMP
US7112270B2 (en) * 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
US6769961B1 (en) * 2003-01-15 2004-08-03 Lam Research Corporation Chemical mechanical planarization (CMP) apparatus
US6893328B2 (en) * 2003-04-23 2005-05-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Conductive polishing pad with anode and cathode
US7456035B2 (en) 2003-07-29 2008-11-25 Lumination Llc Flip chip light emitting diode devices having thinned or removed substrates
US20050087450A1 (en) * 2003-10-24 2005-04-28 Reder Steven E. Electropolishing pad
US20050121141A1 (en) * 2003-11-13 2005-06-09 Manens Antoine P. Real time process control for a polishing process
EP1706893A2 (en) 2003-12-24 2006-10-04 Gelcore LLC Laser lift-off of sapphire from a nitride flip-chip
US7655565B2 (en) * 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
US7125734B2 (en) 2005-03-09 2006-10-24 Gelcore, Llc Increased light extraction from a nitride LED
US20070158201A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Electrochemical processing with dynamic process control
US7585782B2 (en) * 2006-04-11 2009-09-08 Micron Technology, Inc. Methods of forming semiconductor constructions, and methods of selectively removing metal-containing materials relative to oxide
US7422982B2 (en) * 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
JP5148079B2 (en) * 2006-07-25 2013-02-20 富士通株式会社 Heat exchanger for liquid cooling unit, liquid cooling unit and electronic equipment
JP2009094205A (en) * 2007-10-05 2009-04-30 Renesas Technology Corp Polishing pad and polishing device for device wafer
US9102034B2 (en) * 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US9227294B2 (en) * 2013-12-31 2016-01-05 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for chemical mechanical polishing
CN104894634A (en) * 2014-03-03 2015-09-09 盛美半导体设备（上海）有限公司 Novel electrochemical polishing device
US10692735B2 (en) * 2017-07-28 2020-06-23 Lam Research Corporation Electro-oxidative metal removal in through mask interconnect fabrication
US12090600B2 (en) * 2022-06-06 2024-09-17 Applied Materials, Inc. Face-up wafer electrochemical planarization apparatus
CN118061075A (en) * 2022-11-23 2024-05-24 杭州众硅电子科技有限公司 Conductive polishing head fixing device and conductive polishing head system

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JPS62136032A (en) * 1985-12-09 1987-06-19 Rohm Co Ltd Working method for back surface of semiconductor wafer
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Also Published As

Publication number Publication date
US7367871B2 (en) 2008-05-06
US20040221956A1 (en) 2004-11-11
WO2001071796A2 (en) 2001-09-27
WO2001071796A3 (en) 2002-03-14
US20060223425A1 (en) 2006-10-05
US7056194B2 (en) 2006-06-06
DE10195941T5 (en) 2005-01-27
JP2003535456A (en) 2003-11-25
US6790130B2 (en) 2004-09-14
KR100562440B1 (en) 2006-03-20
DE10195941B4 (en) 2010-04-01
JP3823056B2 (en) 2006-09-20
US20040087251A1 (en) 2004-05-06
US20020061714A1 (en) 2002-05-23
KR20020093851A (en) 2002-12-16
US6582281B2 (en) 2003-06-24

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