WO2003034482A3 - Method for selecting faulty dielectrics of a semiconductor component - Google Patents

Method for selecting faulty dielectrics of a semiconductor component Download PDF

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Publication number
WO2003034482A3
WO2003034482A3 PCT/DE2002/003781 DE0203781W WO03034482A3 WO 2003034482 A3 WO2003034482 A3 WO 2003034482A3 DE 0203781 W DE0203781 W DE 0203781W WO 03034482 A3 WO03034482 A3 WO 03034482A3
Authority
WO
WIPO (PCT)
Prior art keywords
dielectrics
component
control layer
semiconductor component
faulty
Prior art date
Application number
PCT/DE2002/003781
Other languages
German (de)
French (fr)
Other versions
WO2003034482A2 (en
Inventor
Stefan Lottholz
Original Assignee
Bosch Gmbh Robert
Stefan Lottholz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Stefan Lottholz filed Critical Bosch Gmbh Robert
Priority to EP02776786A priority Critical patent/EP1438742A2/en
Publication of WO2003034482A2 publication Critical patent/WO2003034482A2/en
Publication of WO2003034482A3 publication Critical patent/WO2003034482A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention concerns a method for selecting faulty dielectrics (2) of a semiconductor component (1), in particular faulty transistor gates of a MOS component. Said method consists in producing, during the production process proper of said component (1) and above the already structured dielectrics (2), a control layer (3) for simultaneous electrical contact of said dielectrics; simultaneously verifying the functionality of the dielectrics by applying an electric voltage on the control layer (3), located on the dielectrics (2), and on the substrate (4), located beneath the dielectrics (2) and in eliminating or structuring the control layer (3) to carry on the production process proper of said component (1).
PCT/DE2002/003781 2001-10-09 2002-10-07 Method for selecting faulty dielectrics of a semiconductor component WO2003034482A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP02776786A EP1438742A2 (en) 2001-10-09 2002-10-07 Method for selecting faulty dielectrics of a semiconductor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001149773 DE10149773A1 (en) 2001-10-09 2001-10-09 Process for selecting faulty dielectrics of a semiconductor component comprises forming a testing layer during production of component above the dielectrics, testing functionality of the dielectrics, and removing or structuring
DE10149773.3 2001-10-09

Publications (2)

Publication Number Publication Date
WO2003034482A2 WO2003034482A2 (en) 2003-04-24
WO2003034482A3 true WO2003034482A3 (en) 2004-01-29

Family

ID=7701909

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/003781 WO2003034482A2 (en) 2001-10-09 2002-10-07 Method for selecting faulty dielectrics of a semiconductor component

Country Status (4)

Country Link
EP (1) EP1438742A2 (en)
DE (1) DE10149773A1 (en)
TW (1) TW563220B (en)
WO (1) WO2003034482A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294259A2 (en) * 1987-05-29 1988-12-07 STMicroelectronics, Inc. Screening of gate oxides on semiconductors
US5391502A (en) * 1993-08-27 1995-02-21 Vlsi Technology, Inc. Per-wafer method for globally stressing gate oxide during device fabrication
US5543334A (en) * 1993-12-15 1996-08-06 Kabushiki Kaisha Toshiba Method of screening semiconductor device
US5798281A (en) * 1995-11-08 1998-08-25 Texas Instruments Incorporated Method for stressing oxide in MOS devices during fabrication using first and second opposite potentials

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19936321C2 (en) * 1999-08-02 2003-12-24 Infineon Technologies Ag Arrangement and method for testing a plurality of semiconductor chips at the wafer level

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294259A2 (en) * 1987-05-29 1988-12-07 STMicroelectronics, Inc. Screening of gate oxides on semiconductors
US5391502A (en) * 1993-08-27 1995-02-21 Vlsi Technology, Inc. Per-wafer method for globally stressing gate oxide during device fabrication
US5543334A (en) * 1993-12-15 1996-08-06 Kabushiki Kaisha Toshiba Method of screening semiconductor device
US5798281A (en) * 1995-11-08 1998-08-25 Texas Instruments Incorporated Method for stressing oxide in MOS devices during fabrication using first and second opposite potentials

Also Published As

Publication number Publication date
DE10149773A1 (en) 2003-04-24
WO2003034482A2 (en) 2003-04-24
TW563220B (en) 2003-11-21
EP1438742A2 (en) 2004-07-21

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