WO2003007381A3 - Low voltage threshold dynamic biasing - Google Patents

Low voltage threshold dynamic biasing Download PDF

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Publication number
WO2003007381A3
WO2003007381A3 PCT/IB2002/002476 IB0202476W WO03007381A3 WO 2003007381 A3 WO2003007381 A3 WO 2003007381A3 IB 0202476 W IB0202476 W IB 0202476W WO 03007381 A3 WO03007381 A3 WO 03007381A3
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
well
component
semiconductor
low voltage
Prior art date
Application number
PCT/IB2002/002476
Other languages
French (fr)
Other versions
WO2003007381A2 (en
Inventor
Edward J F Paulus
Johannes Q Janse
Original Assignee
Koninkl Philips Electronics Nv
Edward J F Paulus
Johannes Q Janse
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Edward J F Paulus, Johannes Q Janse filed Critical Koninkl Philips Electronics Nv
Priority to KR10-2003-7003362A priority Critical patent/KR20030033048A/en
Priority to JP2003513044A priority patent/JP2004521519A/en
Publication of WO2003007381A2 publication Critical patent/WO2003007381A2/en
Publication of WO2003007381A3 publication Critical patent/WO2003007381A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors

Abstract

A low voltage threshold semiconductor circuit comprising a first semiconductor component (6), a second semiconductor component (7), and a well (1), wherein the well (1) is connected between the first (6) and the second (7) component and wherein the first component (6) is connected as a diode between the well (1) and a first voltage (3), and the second component (7) is connected as a diode between the well (1) and a second voltage (5), so that the first component (6) automatically conducts when the first voltage (3) is higher than the second voltage (5) and the second component (7) automatically conducts when the second voltage (5) is higher than the first voltage (3), characterised in that the first (6) and the second (7) semiconductor components comprise Dynamic Threshold Metal Oxide Semiconductor Transistors (DTMOSTs). The well (1) may be connected to an external circuit power supply and is preferably an n-well at its low voltage side and is connected to the cathodes of each DTMOST has its gate connected to its drain and to the well (1) and the source of the first DTMOST is connected to the first voltage (3) and the source of the second is connected to the second voltage. A power switching comprising such a MOS circuit finds application in switching between main and backup supplies in portable telephones, clock chips and GPS receiver chips because it reduces static current consumption by eliminating parasite currents.
PCT/IB2002/002476 2001-07-09 2002-06-20 Low voltage threshold dynamic biasing WO2003007381A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR10-2003-7003362A KR20030033048A (en) 2001-07-09 2002-06-20 Low voltage threshold dynamic biasing
JP2003513044A JP2004521519A (en) 2001-07-09 2002-06-20 Low voltage threshold dynamic bias

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01202629 2001-07-09
EP01202629.0 2001-07-09

Publications (2)

Publication Number Publication Date
WO2003007381A2 WO2003007381A2 (en) 2003-01-23
WO2003007381A3 true WO2003007381A3 (en) 2003-06-05

Family

ID=8180618

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2002/002476 WO2003007381A2 (en) 2001-07-09 2002-06-20 Low voltage threshold dynamic biasing

Country Status (3)

Country Link
JP (1) JP2004521519A (en)
KR (1) KR20030033048A (en)
WO (1) WO2003007381A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112014719B (en) * 2020-08-24 2023-07-11 南京盛科通信有限公司 Screening method and device for mass production chips

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341034A (en) * 1993-02-11 1994-08-23 Benchmarq Microelectronics, Inc. Backup battery power controller having channel regions of transistors being biased by power supply or battery
JPH07147381A (en) * 1993-11-24 1995-06-06 Matsushita Electric Ind Co Ltd Static electricity breakdown protection circuit
EP0747957A2 (en) * 1995-06-07 1996-12-11 STMicroelectronics, Inc. Power supply isolation and switching circuit
US5811857A (en) * 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications
JP2000183710A (en) * 1998-12-17 2000-06-30 Nec Corp Analog switch circuit and semiconductor device having same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341034A (en) * 1993-02-11 1994-08-23 Benchmarq Microelectronics, Inc. Backup battery power controller having channel regions of transistors being biased by power supply or battery
JPH07147381A (en) * 1993-11-24 1995-06-06 Matsushita Electric Ind Co Ltd Static electricity breakdown protection circuit
EP0747957A2 (en) * 1995-06-07 1996-12-11 STMicroelectronics, Inc. Power supply isolation and switching circuit
US5811857A (en) * 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications
JP2000183710A (en) * 1998-12-17 2000-06-30 Nec Corp Analog switch circuit and semiconductor device having same
US6348831B1 (en) * 1998-12-17 2002-02-19 Nec Corporation Semiconductor device with back gate voltage controllers for analog switches

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 09 31 October 1995 (1995-10-31) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09 13 October 2000 (2000-10-13) *

Also Published As

Publication number Publication date
KR20030033048A (en) 2003-04-26
WO2003007381A2 (en) 2003-01-23
JP2004521519A (en) 2004-07-15

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